WO2002082526A1 - Dispositif a semi-conducteurs et procede de fabrication - Google Patents
Dispositif a semi-conducteurs et procede de fabrication Download PDFInfo
- Publication number
- WO2002082526A1 WO2002082526A1 PCT/JP2002/003365 JP0203365W WO02082526A1 WO 2002082526 A1 WO2002082526 A1 WO 2002082526A1 JP 0203365 W JP0203365 W JP 0203365W WO 02082526 A1 WO02082526 A1 WO 02082526A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- film
- substrate
- manufacturing
- semiconductor device
- dielectric films
- Prior art date
Links
- 238000004519 manufacturing process Methods 0.000 title 1
- 239000004065 semiconductor Substances 0.000 title 1
- 239000000758 substrate Substances 0.000 abstract 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 1
- 230000002411 adverse Effects 0.000 abstract 1
- 229910052814 silicon oxide Inorganic materials 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/80—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier
- H01L29/802—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier with heterojunction gate, e.g. transistors with semiconductor layer acting as gate insulating layer, MIS-like transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
- H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
- H01L21/8232—Field-effect technology
- H01L21/8234—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type
- H01L21/8238—Complementary field-effect transistors, e.g. CMOS
- H01L21/823807—Complementary field-effect transistors, e.g. CMOS with a particular manufacturing method of the channel structures, e.g. channel implants, halo or pocket implants, or channel materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
- H01L21/84—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being other than a semiconductor body, e.g. being an insulating body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
- H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind
- H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
- H01L27/088—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate
- H01L27/092—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate complementary MIS field-effect transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1203—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body the substrate comprising an insulating body on a semiconductor body, e.g. SOI
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/1025—Channel region of field-effect devices
- H01L29/1029—Channel region of field-effect devices of field-effect transistors
- H01L29/1033—Channel region of field-effect devices of field-effect transistors with insulated gate, e.g. characterised by the length, the width, the geometric contour or the doping structure
- H01L29/1054—Channel region of field-effect devices of field-effect transistors with insulated gate, e.g. characterised by the length, the width, the geometric contour or the doping structure with a variation of the composition, e.g. channel with strained layer for increasing the mobility
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/783—Field effect transistors with field effect produced by an insulated gate comprising a gate to body connection, i.e. bulk dynamic threshold voltage MOSFET
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78684—Thin film transistors, i.e. transistors with a channel being at least partly a thin film having a semiconductor body comprising semiconductor materials of Group IV not being silicon, or alloys including an element of the group IV, e.g. Ge, SiN alloys, SiC alloys
- H01L29/78687—Thin film transistors, i.e. transistors with a channel being at least partly a thin film having a semiconductor body comprising semiconductor materials of Group IV not being silicon, or alloys including an element of the group IV, e.g. Ge, SiN alloys, SiC alloys with a multilayer structure or superlattice structure
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B53/00—Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory capacitors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B53/00—Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory capacitors
- H10B53/30—Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory capacitors characterised by the memory core region
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1222—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or crystalline structure of the active layer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
- H01L28/40—Capacitors
- H01L28/55—Capacitors with a dielectric comprising a perovskite structure material
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
- H10B12/01—Manufacture or treatment
- H10B12/02—Manufacture or treatment for one transistor one-capacitor [1T-1C] memory cells
- H10B12/05—Making the transistor
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US10/311,292 US7022530B2 (en) | 2001-04-03 | 2002-04-03 | Semiconductor device and method for fabricating the same |
US10/983,610 US7170110B2 (en) | 2001-04-03 | 2004-11-09 | Semiconductor device and method for fabricating the same |
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2001104102 | 2001-04-03 | ||
JP2001-104102 | 2001-04-03 | ||
JP2001150719 | 2001-05-21 | ||
JP2001-150719 | 2001-05-21 |
Related Child Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US10/311,292 A-371-Of-International US7022530B2 (en) | 2001-04-03 | 2002-04-03 | Semiconductor device and method for fabricating the same |
US10/370,766 Division US6872989B2 (en) | 2001-04-03 | 2003-02-24 | Semiconductor device and method for fabricating the same |
Publications (1)
Publication Number | Publication Date |
---|---|
WO2002082526A1 true WO2002082526A1 (fr) | 2002-10-17 |
Family
ID=26612996
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/JP2002/003365 WO2002082526A1 (fr) | 2001-04-03 | 2002-04-03 | Dispositif a semi-conducteurs et procede de fabrication |
Country Status (3)
Country | Link |
---|---|
US (3) | US7022530B2 (ja) |
TW (2) | TWI264818B (ja) |
WO (1) | WO2002082526A1 (ja) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6963114B2 (en) * | 2003-12-29 | 2005-11-08 | Taiwan Semiconductor Manufacturing Company, Ltd. | SOI MOSFET with multi-sided source/drain silicide |
Families Citing this family (39)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4947248B2 (ja) * | 2001-09-14 | 2012-06-06 | Dowaエレクトロニクス株式会社 | ノッチ付き化合物半導体ウエハ |
JP4340040B2 (ja) * | 2002-03-28 | 2009-10-07 | 富士通マイクロエレクトロニクス株式会社 | 半導体装置の製造方法 |
JP3597831B2 (ja) * | 2002-07-01 | 2004-12-08 | 株式会社東芝 | 電界効果トランジスタ及びその製造方法 |
JP3805750B2 (ja) * | 2003-01-21 | 2006-08-09 | 株式会社東芝 | 相補型電界効果トランジスタ及びその製造方法 |
DE10344018B4 (de) * | 2003-09-15 | 2016-12-22 | Mahle International Gmbh | Kühlsystem eingerichtet für einen Verbrennungsmotor mit einem Heißwasserspeicher |
DE10360874B4 (de) * | 2003-12-23 | 2009-06-04 | Infineon Technologies Ag | Feldeffekttransistor mit Heteroschichtstruktur sowie zugehöriges Herstellungsverfahren |
US7217611B2 (en) * | 2003-12-29 | 2007-05-15 | Intel Corporation | Methods for integrating replacement metal gate structures |
US7223994B2 (en) * | 2004-06-03 | 2007-05-29 | International Business Machines Corporation | Strained Si on multiple materials for bulk or SOI substrates |
JP4157496B2 (ja) * | 2004-06-08 | 2008-10-01 | 株式会社東芝 | 半導体装置及びその製造方法 |
US6991942B1 (en) * | 2004-09-28 | 2006-01-31 | Sharp Laboratories Of America, Inc. | MFIS ferroelectric memory array on SOI and method of making same |
US7702750B2 (en) * | 2004-09-29 | 2010-04-20 | Citrix Systems, Inc. | System and method for event detection and re-direction over a network using a presentation level protocol |
US20060099827A1 (en) * | 2004-11-05 | 2006-05-11 | Yoo Woo S | Photo-enhanced UV treatment of dielectric films |
US8023302B2 (en) * | 2005-01-31 | 2011-09-20 | Semiconductor Energy Laboratory Co., Ltd. | Memory device and semiconductor device |
WO2006085633A1 (en) * | 2005-02-10 | 2006-08-17 | Semiconductor Energy Laboratory Co., Ltd. | Memory element and semiconductor device |
US7125759B2 (en) * | 2005-03-23 | 2006-10-24 | Taiwan Semiconductor Manufacturing Co., Ltd. | Semiconductor-on-insulator (SOI) strained active areas |
KR100785458B1 (ko) * | 2005-05-18 | 2007-12-13 | 삼성전자주식회사 | 강유전체 박막의 제조 방법 및 이를 이용한 반도체 장치의제조 방법 |
US7238555B2 (en) * | 2005-06-30 | 2007-07-03 | Freescale Semiconductor, Inc. | Single transistor memory cell with reduced programming voltages |
US20070252223A1 (en) * | 2005-12-05 | 2007-11-01 | Massachusetts Institute Of Technology | Insulated gate devices and method of making same |
US7514714B2 (en) * | 2006-02-16 | 2009-04-07 | Stmicroelectronics, Inc. | Thin film power MOS transistor, apparatus, and method |
US20090173939A1 (en) * | 2006-04-24 | 2009-07-09 | Berg Soeren | Hybrid Wafers |
US20070274059A1 (en) * | 2006-05-25 | 2007-11-29 | Chennupati Raghuram Siva | Apparatus and method for shielding of electromagnetic interference of a memory module |
US7608898B2 (en) * | 2006-10-31 | 2009-10-27 | Freescale Semiconductor, Inc. | One transistor DRAM cell structure |
US7936042B2 (en) * | 2007-11-13 | 2011-05-03 | International Business Machines Corporation | Field effect transistor containing a wide band gap semiconductor material in a drain |
US7968910B2 (en) | 2008-04-15 | 2011-06-28 | International Business Machines Corporation | Complementary field effect transistors having embedded silicon source and drain regions |
US8237229B2 (en) * | 2008-05-22 | 2012-08-07 | Stmicroelectronics Inc. | Method and apparatus for buried-channel semiconductor device |
JP5347381B2 (ja) * | 2008-08-28 | 2013-11-20 | 富士通セミコンダクター株式会社 | 半導体装置の製造方法 |
US8680629B2 (en) * | 2009-06-03 | 2014-03-25 | International Business Machines Corporation | Control of flatband voltages and threshold voltages in high-k metal gate stacks and structures for CMOS devices |
US8274116B2 (en) * | 2009-11-16 | 2012-09-25 | International Business Machines Corporation | Control of threshold voltages in high-k metal gate stack and structures for CMOS devices |
JP5531848B2 (ja) * | 2010-08-06 | 2014-06-25 | 富士通セミコンダクター株式会社 | 半導体装置、半導体集積回路装置、SRAM、Dt−MOSトランジスタの製造方法 |
DE102010046215B4 (de) | 2010-09-21 | 2019-01-03 | Infineon Technologies Austria Ag | Halbleiterkörper mit verspanntem Bereich, Elektronisches Bauelement und ein Verfahren zum Erzeugen des Halbleiterkörpers. |
JP2012142560A (ja) * | 2010-12-15 | 2012-07-26 | Canon Inc | 固体撮像装置およびその製造方法ならびにカメラ |
JP5655570B2 (ja) * | 2011-01-06 | 2015-01-21 | 住友電気工業株式会社 | 半導体装置の製造方法 |
KR20130007065A (ko) * | 2011-06-28 | 2013-01-18 | 삼성디스플레이 주식회사 | 박막 트랜지스터, 이를 구비하는 화소 및 유기 발광 표시 장치 |
CN103390634B (zh) * | 2012-05-09 | 2015-12-02 | 中芯国际集成电路制造(上海)有限公司 | SiC MOSFET结构及其制造方法 |
CN103579308B (zh) * | 2012-07-27 | 2016-08-10 | 中芯国际集成电路制造(上海)有限公司 | Mos晶体管器件及其制造方法 |
US9685509B2 (en) | 2013-07-30 | 2017-06-20 | Samsung Electronics Co., Ltd. | Finfet devices including high mobility channel materials with materials of graded composition in recessed source/drain regions |
US9917158B2 (en) * | 2013-07-30 | 2018-03-13 | Samsung Electronics Co., Ltd. | Device contact structures including heterojunctions for low contact resistance |
US9728597B2 (en) * | 2014-12-04 | 2017-08-08 | Taiwan Semiconductor Manufacturing Co., Ltd. | Metal-insulator-metal structure and method for forming the same |
KR101930439B1 (ko) | 2017-12-18 | 2018-12-19 | 삼성디스플레이 주식회사 | 화소 |
Citations (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH01140632A (ja) * | 1987-11-27 | 1989-06-01 | Fujitsu Ltd | 半導体装置の製造方法 |
JPH0322430A (ja) * | 1989-06-20 | 1991-01-30 | Sony Corp | 平坦化絶縁膜形成方法 |
JPH06291253A (ja) * | 1993-04-07 | 1994-10-18 | Oki Electric Ind Co Ltd | 半導体素子の電荷蓄積部の誘電体絶縁膜の形成方法 |
JPH08335676A (ja) * | 1995-06-09 | 1996-12-17 | Rohm Co Ltd | 複合酸化物の結晶性薄膜の製造方法 |
JPH1041515A (ja) * | 1996-07-26 | 1998-02-13 | Toshiba Corp | 薄膜トランジスタの製造方法及びアクティブマトリクス型液晶表示装置の製造方法 |
GB2332983A (en) * | 1997-12-31 | 1999-07-07 | Samsung Electronics Co Ltd | Forming a thin film on a wafer using microwave heating |
JPH11233733A (ja) * | 1998-02-13 | 1999-08-27 | Toshiba Corp | 電子部品及びその製造方法 |
JP2000091576A (ja) * | 1998-07-17 | 2000-03-31 | Sharp Corp | 半導体装置及びその製造方法 |
WO2000032516A1 (fr) * | 1998-11-27 | 2000-06-08 | Rohm Co., Ltd. | Production de substance solide a base de compose inorganique et fabrication de semi-conducteur |
EP1102327A2 (en) * | 1999-11-15 | 2001-05-23 | Matsushita Electric Industrial Co., Ltd. | Field effect semiconductor device |
Family Cites Families (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CH656838A5 (de) | 1982-12-02 | 1986-07-31 | Bostitch Ag | Heftmappe. |
JPH06291316A (ja) | 1992-02-25 | 1994-10-18 | Semiconductor Energy Lab Co Ltd | 薄膜状絶縁ゲイト型半導体装置およびその作製方法 |
JP3221901B2 (ja) | 1992-01-06 | 2001-10-22 | 株式会社東芝 | 半導体装置 |
US5559368A (en) * | 1994-08-30 | 1996-09-24 | The Regents Of The University Of California | Dynamic threshold voltage mosfet having gate to body connection for ultra-low voltage operation |
US5847419A (en) * | 1996-09-17 | 1998-12-08 | Kabushiki Kaisha Toshiba | Si-SiGe semiconductor device and method of fabricating the same |
US6399970B2 (en) * | 1996-09-17 | 2002-06-04 | Matsushita Electric Industrial Co., Ltd. | FET having a Si/SiGeC heterojunction channel |
JPH10116919A (ja) | 1996-10-11 | 1998-05-06 | Matsushita Electric Ind Co Ltd | 電界効果型トランジスタ |
JPH10256556A (ja) | 1997-03-14 | 1998-09-25 | Toshiba Corp | 半導体装置及びその製造方法 |
JP3443343B2 (ja) * | 1997-12-03 | 2003-09-02 | 松下電器産業株式会社 | 半導体装置 |
JP3428459B2 (ja) * | 1998-09-01 | 2003-07-22 | 富士電機株式会社 | 炭化けい素nチャネルMOS半導体素子およびその製造方法 |
WO2000016391A1 (en) * | 1998-09-14 | 2000-03-23 | Matsushita Electric Industrial Co., Ltd. | Method for producing semiconductor device |
JP2000144419A (ja) | 1998-11-12 | 2000-05-26 | Matsushita Electric Ind Co Ltd | 誘電体薄膜の製造方法 |
JP2000243854A (ja) * | 1999-02-22 | 2000-09-08 | Toshiba Corp | 半導体装置及びその製造方法 |
DE19926501A1 (de) * | 1999-06-10 | 2000-12-21 | Siemens Ag | Verfahren zur Herstellung eines Halbleiterspeicherbauelements |
JP2001077368A (ja) | 1999-09-03 | 2001-03-23 | Mitsubishi Electric Corp | 半導体装置及びその製造方法 |
-
2002
- 2002-04-03 TW TW091106752A patent/TWI264818B/zh not_active IP Right Cessation
- 2002-04-03 TW TW092115441A patent/TW200305976A/zh unknown
- 2002-04-03 WO PCT/JP2002/003365 patent/WO2002082526A1/ja active Application Filing
- 2002-04-03 US US10/311,292 patent/US7022530B2/en not_active Expired - Lifetime
-
2003
- 2003-02-24 US US10/370,766 patent/US6872989B2/en not_active Expired - Lifetime
-
2004
- 2004-11-09 US US10/983,610 patent/US7170110B2/en not_active Expired - Lifetime
Patent Citations (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH01140632A (ja) * | 1987-11-27 | 1989-06-01 | Fujitsu Ltd | 半導体装置の製造方法 |
JPH0322430A (ja) * | 1989-06-20 | 1991-01-30 | Sony Corp | 平坦化絶縁膜形成方法 |
JPH06291253A (ja) * | 1993-04-07 | 1994-10-18 | Oki Electric Ind Co Ltd | 半導体素子の電荷蓄積部の誘電体絶縁膜の形成方法 |
JPH08335676A (ja) * | 1995-06-09 | 1996-12-17 | Rohm Co Ltd | 複合酸化物の結晶性薄膜の製造方法 |
JPH1041515A (ja) * | 1996-07-26 | 1998-02-13 | Toshiba Corp | 薄膜トランジスタの製造方法及びアクティブマトリクス型液晶表示装置の製造方法 |
GB2332983A (en) * | 1997-12-31 | 1999-07-07 | Samsung Electronics Co Ltd | Forming a thin film on a wafer using microwave heating |
JPH11233733A (ja) * | 1998-02-13 | 1999-08-27 | Toshiba Corp | 電子部品及びその製造方法 |
JP2000091576A (ja) * | 1998-07-17 | 2000-03-31 | Sharp Corp | 半導体装置及びその製造方法 |
WO2000032516A1 (fr) * | 1998-11-27 | 2000-06-08 | Rohm Co., Ltd. | Production de substance solide a base de compose inorganique et fabrication de semi-conducteur |
EP1102327A2 (en) * | 1999-11-15 | 2001-05-23 | Matsushita Electric Industrial Co., Ltd. | Field effect semiconductor device |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6963114B2 (en) * | 2003-12-29 | 2005-11-08 | Taiwan Semiconductor Manufacturing Company, Ltd. | SOI MOSFET with multi-sided source/drain silicide |
Also Published As
Publication number | Publication date |
---|---|
TWI264818B (en) | 2006-10-21 |
US20040142579A1 (en) | 2004-07-22 |
US20050093020A1 (en) | 2005-05-05 |
US7170110B2 (en) | 2007-01-30 |
US20030201497A1 (en) | 2003-10-30 |
TW200305976A (en) | 2003-11-01 |
US7022530B2 (en) | 2006-04-04 |
US6872989B2 (en) | 2005-03-29 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
WO2002082526A1 (fr) | Dispositif a semi-conducteurs et procede de fabrication | |
EP0966029A4 (en) | PROCESS FOR PRODUCING SILICON OXIDE FILM, PROCESS FOR MANUFACTURING SEMICONDUCTOR DEVICE, SEMICONDUCTOR DEVICE, DISPLAY AND INFRARED RADIATION DEVICE | |
EP1256977A4 (en) | PROC D AND DEVICE FOR PRODUCING POLYCRYSTALLINE SILICON FILM, SEMICONDUCTOR DEVICE, AND MANUFACTURING PROC D | |
MY134849A (en) | Laser annealing method and semiconductor device fabricating method | |
AU2001278749A1 (en) | Low-dielectric silicon nitride film and method of forming the same, semiconductor device and fabrication process thereof | |
TW344897B (en) | A process for forming gate oxides possessing different thicknesses on a semiconductor substrate | |
WO2002063668A1 (fr) | Procede permettant de former un film isolant et procede permettant de fabriquer un dispositif a semi-conducteur | |
TW337035B (en) | Semiconductor device and method of manufacturing the same | |
EP1722403A3 (en) | Fabrication method for a thin film smiconductor device | |
KR920018977A (ko) | 반도체 디바이스 및 집적회로와 그 제조 방법 | |
TW200511565A (en) | SRAM cell and methods of fabrication | |
US20080135980A1 (en) | Method for making junction and processed material formed using the same | |
WO2003079405A3 (en) | Method for forming thin film layers by simultaneous doping and sintering | |
EP0406025A3 (en) | Method for fabricating a semiconductor device in which an insulating layer thereof has a uniform thickness | |
EP0173610A3 (en) | An improved method for controlling lateral diffusion of silicon in a self-aligned tisi2 process | |
TW253992B (en) | Dielectric as load resistor in 4T SRAM | |
US6885069B2 (en) | Semiconductor device in which occurrence of slips is suppressed | |
WO2002093648A3 (en) | Semiconductor device interconnect | |
EP1605500A4 (en) | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME | |
TW465073B (en) | Low temperature coefficient resistor (TCRL) | |
TW353206B (en) | Process for producing self-aligned salicide having high temperature stability | |
TW350117B (en) | Method for manufacturing capacitor of semiconductor device | |
EP1081755A3 (en) | Method for improving a quality of dielectric layer and semiconductor device | |
WO2002008836A3 (de) | Verfahren und vorrichtung zur thermischen behandlung einer fotolackschicht auf einem schaltungssubstrat, insbesondere halbleiterwafer | |
MY121209A (en) | Semiconductor device and production thereof. |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
AK | Designated states |
Kind code of ref document: A1 Designated state(s): CN KR SG US |
|
AL | Designated countries for regional patents |
Kind code of ref document: A1 Designated state(s): AT BE CH CY DE DK ES FI FR GB GR IE IT LU MC NL PT SE TR |
|
121 | Ep: the epo has been informed by wipo that ep was designated in this application | ||
WWE | Wipo information: entry into national phase |
Ref document number: 10311292 Country of ref document: US |
|
122 | Ep: pct application non-entry in european phase |