WO2002065820A1 - Appareil de production de plasma a basse temperature et a pression atmospherique - Google Patents

Appareil de production de plasma a basse temperature et a pression atmospherique Download PDF

Info

Publication number
WO2002065820A1
WO2002065820A1 PCT/KR2002/000202 KR0200202W WO02065820A1 WO 2002065820 A1 WO2002065820 A1 WO 2002065820A1 KR 0200202 W KR0200202 W KR 0200202W WO 02065820 A1 WO02065820 A1 WO 02065820A1
Authority
WO
WIPO (PCT)
Prior art keywords
electrodes
plasma
discharge
power supply
temperature plasma
Prior art date
Application number
PCT/KR2002/000202
Other languages
English (en)
Inventor
Kee-Seok Nam
Sang-Ro Lee
Koo-Hyun Lee
Jong-Ju Rha
Jong-Kuk Kim
Original Assignee
Se Plasma Inc.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Se Plasma Inc. filed Critical Se Plasma Inc.
Priority to JP2002565398A priority Critical patent/JP3990285B2/ja
Priority to EP02700834A priority patent/EP1366647A4/fr
Publication of WO2002065820A1 publication Critical patent/WO2002065820A1/fr

Links

Classifications

    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00—Generating plasma; Handling plasma
    • H05H1/24—Generating plasma
    • H05H1/48—Generating plasma using an arc
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32018—Glow discharge
    • H01J37/32036—AC powered
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32018—Glow discharge
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00—Generating plasma; Handling plasma
    • H05H1/24—Generating plasma
    • H05H1/2406—Generating plasma using dielectric barrier discharges, i.e. with a dielectric interposed between the electrodes
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H2245/00—Applications of plasma devices
    • H05H2245/10—Treatment of gases
    • H05H2245/17—Exhaust gases
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H2245/00—Applications of plasma devices
    • H05H2245/30—Medical applications
    • H05H2245/36—Sterilisation of objects, liquids, volumes or surfaces

Definitions

  • the present invention relates to an apparatus for generating low-temperature plasma in a high density at atmospheric pressure with low discharge initiation and maintenance voltages.
  • plasma is defined as a partially ionized gas composed of a nearly equal number of positive and negative free charges so that it is electrically neutral.
  • plasma is of very high reactivity, chemically and physically.
  • Low-temperature plasma is used to synthesize various materials, such as metals, semiconductors, polymers, nylon, plastic, paper, fiber, and ozone, or to modify surface properties of materials with a concomitant improvement in various physical and chemical properties such as junction strength, dyeing properties, printability, etc. Accordingly, low-temperature plasma finds numerous applications in semiconductor, metal, ceramic thin film synthesis, and cleaning fields.
  • low-temperature plasma can be generated in a vacuum vessel of low pressure.
  • an apparatus which is expensive on the whole.
  • materials to be treated are large in size, it is difficult to apply plasma to them.
  • Another problem with plasma treatment is difficulty in automation of plasma processes. Further to these, plasma has difficulty in treating materials which show high vapor pressures or are degassed, such as rubber, biomaterials, etc.
  • a corona discharge is a discharge of electricity appearing as a bluish-purple glow on the surface of and adjacent to a conductor when the voltage gradient exceeds a critical value.
  • streamer plasma is generated from the electrodes.
  • a dielectric barrier discharge utilizes the charge accumulation resulting from dielectric polarization to form a reverse potential at which the discharge is halted, that is, it takes advantage of a pulse discharge, thereby preventing the development of arc discharges.
  • plasma is generated in the form of a streamer that is not homogeneous and is low in density. Additionally, because the gap between two electrodes is narrow, a corona discharge is difficult to apply to targets of three-dimensional shape. Also, other problems with the coronal discharge include noise generation and a short electrode lifetime.
  • the dielectric barrier discharge does not ensure the generation of homogenous, diffused plasma over a large area, as in the corona discharge.
  • the dielectric barrier discharge is low in plasma density, and the distance between two electrodes is so narrow as to limit the size and shape of a target to be treated.
  • gases with high discharge initiation and maintenance potentials such as argon, oxygen and nitrogen, are used, both the corona discharge and the dielectric barrier discharge techniques require a high-voltage power supply.
  • the power supply is difficult to operate and manage because of its being expensive and high in electricity consumption.
  • an apparatus for generating low-temperature plasma at atmospheric pressure comprising: a couple of electrodes facing each other at a distance, one of them being connected to a power supply, the other being grounded; a couple of dielectrics with a thickness of 25 ⁇ m-10 mm, positioned on the facing surfaces of the electrodes in such a way as to face each other, one of them having at least one discharge gap therein; and a conductor electrode having at least one tip positioned within the discharge gap, in which an electric field is applied at an intensity of 1-100 KV/cm through the power supply across the electrodes by use of a pulse direct current or an alternating current in a frequency bandwidth of 50 Hz-10 GHz while a reaction gas is fed between the electrodes .
  • the plasma generated from the apparatus of the present invention is suitable to form radicals of high energy, which have numerous applications in various fields, including bonding, polishing, cleaning, thin films deposition, sterilization, disinfection, ozone generation, printing, dyeing, etching of various materials such as metal, rubber, fibers, paper, synthetic resins and semiconductors.
  • application fields of the plasma include purification of tap water and waste water, purification of air and automobile exhaust gas such as SO x and NO x , combustion of fuels, manufacture of highly luminous lamps, etc.
  • Fig. 1 is a schematic diagram showing a plate structure of electrodes in a cross sectional view, suitable for use in an apparatus for generating low-temperature plasma at atmospheric pressure, in accordance with a first embodiment of the present invention
  • Fig. 2 is a schematic diagram showing a tube structure of electrodes in a cross sectional view, suitable for use in an apparatus for generating low-temperature plasma at atmospheric pressure in accordance with a second embodiment of the present invention.
  • Fig. 3 provides illustrations of tips provided to conductor electrodes.
  • FIG. 1 there is an electrode structure seen in a cross sectional view, suitable for use in an apparatus for generating low-temperature plasma at atmospheric pressure, in accordance with a first embodiment of the present invention.
  • the present invention employs a plate structure of electrodes in generating low-temperature plasma at atmospheric pressure.
  • the apparatus has a couple of electrodes 1 and 2 which are positioned to face each other in accordance with the present invention.
  • One of the two electrodes is connected to a power supply 6 while the other electrode is grounded.
  • the grounded electrode is an anode 2 and the electrode connected to the power supply 6 is set as a cathode 1.
  • both electrodes are made of metal such as stainless steel, aluminum or copper.
  • each of the dielectrics 3 and 4 is mounted on each of the electrodes 1 and 2, respectively, and arranged in such a way as to face each other.
  • each of the dielectrics 3 and 4 preferably ranges in thickness from 25 ⁇ m to 10 mm.
  • discharge gaps 7 are provided which run through the dielectric 3 perpendicularly to its surface.
  • the dielectric 4 mounted onto the surface of the grounded electrode 2 has no discharge gaps.
  • one dielectric with perpendicularly perforating discharge gaps is mounted on the electrode 1 connected to the power supply ⁇ and another dielectric with no discharge gaps is mounted on the grounded electrode 2, after which the two dielectrics are positioned in such a way as to face each other.
  • conductor electrodes 5 with a certain width (a) and a certain height (b) are positioned within each discharge gap 7.
  • the conductor electrodes 5 have tips 8, 8' or 8" which may be in a form shown in Fig. 3A, 3B or 3C.
  • the conductor electrodes 5 accumulate charges at the tips 8, 8' or 8" which facilitate the discharging of the accumulated charges.
  • the tips 8, 8' or 8" function to control the width (a) and height (b) of each of the discharge gaps 7.
  • the tips formed on the conductor electrode 5 may be pointed, square or curved 1 in shape. Other various shapes may be applied to the tips.
  • the tips Preferably, the tips have a height (b) 0.1-20 times as long as their width (a) while being present at a density of 1-100 per length of 10 mm.
  • the apparatus having a plate structure of electrodes is illustrated to have the dielectric 3 on the electrode 1 connected to the power supply 6 and the dielectric 4 on the electrode grounded, it should be understood that the present invention is not limited to this, but may have various structures.
  • the electrodes 1 and 2 on which the dielectrics 3 and 4 are to be positioned may be changed in position.
  • the dielectric 3 with discharge gaps 7 is mounted onto the ground electrode 2 while the dielectric 4 lacking discharge gaps 7 is mounted onto the electrode 1 connected to the power supply 6. Additionally, when a dielectric with discharge gaps 7 may be mounted on one of the electrodes 1 and 2, the remaining one may be provided with no dielectrics.
  • the dielectrics are required to be resistant to high temperatures and have superior dielectric properties.
  • the dielectrics are made of a materials selected from the group consisting of glass, alumina, boron nitride, silicon carbide, silicon nitride, quartz, and magnesium oxide .
  • the discharge gaps 7 which run perpendicularly through the dielectric preferably range in width (a) from 5 ⁇ m to 2 mm with a height (a) being 5-250 fold longer than the width
  • FIG. 2 there is an electrode structure seen in a cross sectional view, suitable for use in an apparatus for generating low-temperature plasma at atmospheric pressure, in accordance with another embodiment of the present invention.
  • the present invention adopts a tube structure of electrodes to an apparatus capable of low-temperature plasma generation at atmospheric pressure.
  • a tubular electrode 1 ' to the inner circumference of which a dielectric 3' is attached.
  • a cylindrical core electrode 2 ' which is concentric to the tubular electrode 1' is placed at a certain distance from the dielectric 3' attached to the inner surface of the tubular electrode 1 ' .
  • Both ends of each electrode are fixed while being suitably insulated (not shown) .
  • another dielectric 4' is fixed, with a plurality of discharge gaps 7' being provided at regular intervals in the dielectric 4' .
  • each of the electrodes 3' and 4' may fall within the range set in the First Embodiment. Also, the same limitations as in the First Embodiment are placed on the width (a) and height (b) of the discharge gaps 7. On the outer circumference of the core electrode 2 are positioned conductor electrodes 5 with such a width (a) and a height (b) as to fit the discharge gaps 7. The conductor electrodes 5 are also provided with tips which have the shapes shown in Fig. 3.
  • tubular electrode 1 ' is grounded, the core electrode 2 ' is connected to a power supply 6.
  • various modifications can be made in arrangements, shapes and conformations of electrodes V and 2 ' and dielectrics 3' and 4' .
  • an electric field is applied at an intensity of 1-100 KV/cm through the power supply 6 to the apparatuses of the First and the Second Embodiments, by use of a pulse direct current or an alternating current in a frequency bandwidth of 50 Hz-10 GHz. In the presence of such an electric field, discharging is conducted between the tips of the discharge gaps and the counter electrode, to generate plasma.
  • homogeneous plasma of a large area can be generated stably.
  • the plasma generated from the apparatuses of the present invention is applied to a variety of materials, such as metal, rubber, fibers, paper, and synthetic resins, e.g. plastics, nylon, epoxy, etc., to change surface properties of the materials to ones suitable for use in bonding, polishing, thin films deposition, dyeing, printing, etc.
  • materials such as metal, rubber, fibers, paper, and synthetic resins, e.g. plastics, nylon, epoxy, etc.
  • plasma can be directly applied for the removal of toxicity and the purification of contaminated air.
  • plasma is used to make ozone which is utilized in sterilization and disinfection of tap water, purification of waste water, purification of automobile exhaust gases such as SO x and NO x , and complete combustion of fuels in automobile engines.
  • plasma can be adopted to manufacture very bright lamps useful for photochemical reactions which can be applied to various surface treatment processes, including semiconductor device fabrication.
  • reaction gases such as air, water vapor, oxygen, nitrogen, hydrogen, argon, helium, methane, ammonia, tetrafluoro carbon, aectylene, propane, etc
  • reaction gases such as air, water vapor, oxygen, nitrogen, hydrogen, argon, helium, methane, ammonia, tetrafluoro carbon, aectylene, propane, etc
  • This plasma is usefully utilized in bonding, polishing, cleaning, thin films deposition, sterilization, disinfection, ozone preparation, dyeing, printing, etching, purification of water, purification of air and automobile exhaust gases, complete combustion of fuels in automobile engines, manufacture of highly luminous lamps, etc.
  • This experimental example employed the same plasma- generating apparatus as in Second Embodiment, which had a plate structure in which two electrode plates 1 and 2 were arranged to face each other and a dielectric is provided on each of the facing surfaces of the electrode plates 1 and 2.
  • a plurality of discharge gaps 7, each being 200 ⁇ m width and 2 mm high were formed.
  • tips 8 shaped as in Fig. 3a each having a width (a) of 2 mm and a height (b) of 1.5 mm, were provided.
  • helium gas was introduced, while a direct current bipolar pulse electric source of 50 KHz was applied across the electrodes to discharge at atmospheric pressure.
  • a discharge initiation voltage for helium gas was measured to be about 3.7 KV/cm. If the distance between the electrodes was 7 mm, about 2.6 KV was required as a discharge initiation potential.
  • the apparatuses for generating low-temperature plasma of the present invention enjoy the following advantages:
  • the apparatus for generating plasma at atmospheric pressure adapted for the induction of hollow cathode discharges, capillary discharges or highly accumulated electric fields, prevents the conversion of the plasma to arcs and thus gives stable, low-temperature plasma in a high density.
  • the apparatus can initiate and maintain discharging at very low voltages, and utilizes a broad bandwidth of frequencies, in addition to being low in electricity consumption and being manufactured at a low cost.
  • the apparatus can generate homogeneous plasma over a large area in a high density.
  • the plasma is suitable to form radicals of high energy, which have numerous applications in various fields, including bonding, polishing, cleaning, thin films deposition, sterilization, disinfection, ozone preparation, printing, dyeing, etching, purification of tap water and waste water, purification of air and automobile exhaust gas, complete combustion of fuels, manufacture of highly luminous lamps, etc.
  • the plasma can bring about excellent results and reduce the treatment time greatly.

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Power Engineering (AREA)
  • Physical Or Chemical Processes And Apparatus (AREA)
  • Plasma Technology (AREA)
  • Chemical Vapour Deposition (AREA)

Abstract

L'invention concerne un appareil de production de plasma à basse température et à pression atmosphérique. Cet appareil comprend: une paire d'électrodes disposées l'une en face de l'autre à une certaine distance, une de ces électrodes étant connectée à une alimentation et l'autre étant mise à la terre; une paire d'éléments diélectriques d'une épaisseur comprise entre 25νm et 10mm, positionnés sur les surfaces en regard des électrodes, de manière à être l'un en face de l'autre, un de ces éléments renfermant au moins un espace de décharge; et une électrode conductrice présentant au moins un embout positionné à l'intérieur de l'espace de décharge, un champ électrique étant appliqué à une intensité comprise entre 1 et 100KV/cm par l'intermédiaire de l'alimentation, via les électrodes, au moyen d'une impulsion de courant direct et de courant alternatif dans une largeur de bande de fréquence comprise entre 50Hz et 10 GHz, pendant qu'un gaz de réaction est alimenté entre les électrodes, de manière à induire une décharge de cathode creuse, une décharge capillaire ou une accumulation importante de charges à partir de l'espace de décharge. L'appareil selon l'invention empêche la formation d'arcs dans le plasma et permet d'obtenir un plasma de densité élevée stable à basse température.
PCT/KR2002/000202 2001-02-12 2002-02-08 Appareil de production de plasma a basse temperature et a pression atmospherique WO2002065820A1 (fr)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2002565398A JP3990285B2 (ja) 2001-02-12 2002-02-08 大気圧で低温プラズマを発生させる装置
EP02700834A EP1366647A4 (fr) 2001-02-12 2002-02-08 Appareil de production de plasma a basse temperature et a pression atmospherique

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR10-2001-0006653A KR100464902B1 (ko) 2001-02-12 2001-02-12 대기압에서 저온 플라즈마를 발생시키는 장치
KR2001/6653 2001-02-12

Publications (1)

Publication Number Publication Date
WO2002065820A1 true WO2002065820A1 (fr) 2002-08-22

Family

ID=19705599

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/KR2002/000202 WO2002065820A1 (fr) 2001-02-12 2002-02-08 Appareil de production de plasma a basse temperature et a pression atmospherique

Country Status (6)

Country Link
EP (1) EP1366647A4 (fr)
JP (1) JP3990285B2 (fr)
KR (1) KR100464902B1 (fr)
CN (1) CN1228999C (fr)
TW (1) TWI244879B (fr)
WO (1) WO2002065820A1 (fr)

Cited By (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2003056602A1 (fr) * 2001-12-21 2003-07-10 The Procter & Gamble Company Appareil portatif et procede de traitement d'une piece a usiner
US6759100B2 (en) * 2002-06-10 2004-07-06 Konica Corporation Layer formation method, and substrate with a layer formed by the method
US6841201B2 (en) 2001-12-21 2005-01-11 The Procter & Gamble Company Apparatus and method for treating a workpiece using plasma generated from microwave radiation
JP2005063973A (ja) * 2003-08-14 2005-03-10 Fuji Photo Film Bv プラズマを形成するための装置および方法ならびに電極
EP1594161A1 (fr) * 2003-02-03 2005-11-09 Octec Inc. Dispositif de traitement par plasma, plaque electrode de dispositif de traitement par plasma et procede de production de plaque electrode
US7256296B2 (en) 2004-09-22 2007-08-14 Symyx Technologies, Inc. Heterocycle-amine ligands, compositions, complexes, and catalysts
DE102006011312A1 (de) * 2006-03-11 2007-10-04 Fachhochschule Hildesheim/Holzminden/Göttingen Vorrichtung zur Plasmabehandlung unter Atmosphärendruck
DE102008028167A1 (de) * 2008-06-12 2009-12-31 Maschinenfabrik Reinhausen Gmbh Vorrichtung zur Erzeugung eines Plasma-Jets
JP2010157483A (ja) * 2009-01-05 2010-07-15 Samsung Electro-Mechanics Co Ltd プラズマ発生装置
CN102215626A (zh) * 2011-05-23 2011-10-12 中国科学院物理研究所 一种可在较低电压条件下产生放电等离子体的装置
US8168130B2 (en) 2005-09-16 2012-05-01 Toyo Advanced Technologies Co., Ltd. Plasma generation system and plasma generation method
DE102011000261A1 (de) * 2011-01-21 2012-07-26 Hochschule für angewandte Wissenschaft und Kunst Fachhochschule Hildesheim/Holzminden/Göttingen Dielektrische Koplanarentladungsquelle für eine Oberflächenbehandlung unter Atmosphärendruck
CN102755819A (zh) * 2012-08-02 2012-10-31 桂林市世环废气处理设备有限公司 低温等离子氧化器及低温等离子除臭系统
EP2744307A2 (fr) * 2011-08-11 2014-06-18 Korea Institute of Machinery & Materials Appareil de génération de plasma, procédé de fabrication d'électrodes rotatives pour appareil de génération de plasma, procédé de traitement par plasma de substrat, et procédé permettant de former une couche mince de structure mélangée au moyen de plasma
CN105792495A (zh) * 2016-05-03 2016-07-20 河北大学 一种产生大气压均匀等离子体刷的装置和方法
CN108601191A (zh) * 2018-05-21 2018-09-28 王逸人 阵列式双介质阻挡放电装置
WO2020126910A1 (fr) * 2018-12-21 2020-06-25 Evatec Ag Appareil de traitement sous vide et procédé de traitement par plasma sous vide d'au moins un substrat ou de fabrication d'un substrat
CN111389189A (zh) * 2020-03-11 2020-07-10 北京化工大学 一种可穿戴式等离子体降解危险化学品的装置及方法
CN114551194A (zh) * 2022-02-18 2022-05-27 四川大学 一种等离子体刻蚀装置

Families Citing this family (43)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100482554B1 (ko) * 2002-03-06 2005-04-14 현대자동차주식회사 유전체에 돌출부가 형성된 평행 평판형 타입 플라즈마반응기
KR100601394B1 (ko) * 2004-08-20 2006-07-13 연세대학교 산학협력단 공기정화장치
KR200371074Y1 (ko) * 2004-09-17 2004-12-29 주식회사 다원시스 대기압 플라즈마를 이용한 모발 염색장치
KR100691875B1 (ko) * 2005-03-25 2007-03-09 최진문 대기압 플라즈마 유전체 세정장치
JP4963360B2 (ja) * 2006-01-31 2012-06-27 国立大学法人茨城大学 携帯型大気圧プラズマ発生装置
CN100434935C (zh) * 2006-12-28 2008-11-19 河北大学 一种产生具有三种折射率的等离子体光子晶体的方法
JP4792604B2 (ja) * 2007-04-17 2011-10-12 国立大学法人佐賀大学 プラズマ滅菌装置
KR100861559B1 (ko) * 2007-06-04 2008-10-02 (주)에스이 플라즈마 전원 인가 전극에 결합되는 유전체 하면에 복수개의 분할전극이 부착된 구조의 전극부를 갖는 대기압 플라즈마발생장치
CN101376980B (zh) * 2007-08-27 2011-09-21 宝山钢铁股份有限公司 一种改善带钢润湿性的工艺
KR101046335B1 (ko) 2008-07-29 2011-07-05 피에스케이 주식회사 할로우 캐소드 플라즈마 발생방법 및 할로우 캐소드플라즈마를 이용한 대면적 기판 처리방법
CN101720163B (zh) * 2008-10-10 2012-12-19 河南理工大学 大气压下介质阻挡类辉光放电反应器
CN101772253B (zh) * 2008-12-26 2013-06-26 中国科学院空间科学与应用研究中心 一种等离子体产生装置
KR100924112B1 (ko) * 2009-02-10 2009-10-29 한국과학기술원 중공 전극을 가지는 방전셀에서 플라즈마를 발생하는 소자
KR101193380B1 (ko) * 2009-07-13 2012-10-23 글로벌텍 주식회사 플라즈마 발생 장치
US8926914B2 (en) * 2009-09-02 2015-01-06 Korea Basic Science Institute Liquid medium plasma discharge generating apparatus
KR101151277B1 (ko) * 2009-12-01 2012-06-14 성균관대학교산학협력단 대기압 플라즈마를 이용한 기판의 이중 패터닝 방법
KR101160906B1 (ko) * 2010-03-17 2012-06-28 최대규 용량 결합 플라즈마 반응기
KR101163643B1 (ko) * 2010-05-04 2012-07-06 (주)에스이피 대기압 플라즈마 장치
KR101307111B1 (ko) * 2010-08-24 2013-09-11 닛신 이온기기 가부시기가이샤 플라즈마 발생 장치
CN102026468A (zh) * 2010-11-23 2011-04-20 中国科学院等离子体物理研究所 一种介质阻挡电晕放电反应器
CN102036460B (zh) * 2010-12-10 2013-01-02 西安交通大学 平板式等离子体发生装置
US8760067B2 (en) * 2011-04-04 2014-06-24 Federal-Mogul Ignition Company System and method for controlling arc formation in a corona discharge ignition system
KR101241951B1 (ko) * 2011-08-11 2013-03-11 한국기계연구원 플라즈마 발생장치 및 기판의 플라즈마 처리방법
JP2012140970A (ja) * 2012-04-25 2012-07-26 Nissan Motor Co Ltd エンジン点火制御装置
WO2014007472A1 (fr) * 2012-07-03 2014-01-09 Plasmart Inc. Appareil de génération de plasma et procédé de génération de plasma
CN103269556A (zh) * 2013-05-14 2013-08-28 哈尔滨工业大学 大面积大气等离子体均匀放电电极
KR101439926B1 (ko) 2013-06-11 2014-09-17 한국기계연구원 캐필러리부가 구비된 판상형 전극을 이용한 롤투롤 플라즈마 처리 시스템
CN104619106B (zh) * 2015-01-15 2018-04-20 合肥工业大学 一种实现大气压下空气中均匀辉光放电的装置
CN105951035A (zh) * 2016-05-28 2016-09-21 上海大学 一种弹簧钢在低温等离子体下发蓝的方法
CN105951034A (zh) * 2016-05-28 2016-09-21 上海大学 一种弹簧钢在低温等离子体下渗碳的方法
CN106577982A (zh) * 2016-12-23 2017-04-26 浙江海洋大学 一种鱿鱼丝保鲜的方法
KR101941860B1 (ko) * 2017-06-09 2019-01-25 한국과학기술연구원 기체 방전 살균 및 제독 기능을 가진 차량용 외장재, 이를 포함하는 차량 및 차량의 살균 및 제독을 위한 소독 시스템
KR20200069296A (ko) * 2017-09-01 2020-06-16 솜니오 글로벌 홀딩스, 엘엘씨 자유 라디칼 생성기 및 사용 방법
AT520858A1 (de) 2018-01-30 2019-08-15 Gerald Boehm Vorrichtung und Verfahren zum Bilden eines Temperaturgradienten
CN109494147B (zh) * 2018-11-13 2020-10-30 中国科学院微电子研究所 基于交流电压下微波等离子体的碳化硅氧化方法
CN109545687B (zh) * 2018-11-13 2020-10-30 中国科学院微电子研究所 基于交流电压下微波等离子体氧化的凹槽mosfet器件制造方法
CN109779948B (zh) * 2019-01-17 2021-01-05 沈阳航空航天大学 一种用于提高轴流风机性能的等离子式叶顶间隙密封方法
CN109688689A (zh) * 2019-02-20 2019-04-26 北京卓昱科技有限公司 一种宽间隙电子诱导等离子发生器
CN110904904A (zh) * 2019-12-31 2020-03-24 河南先途智能科技有限公司 一种机场跑道橡胶残留低温等离子处理设备
CN111773427B (zh) * 2020-07-10 2021-07-23 深圳先进技术研究院 一种等离子体空气消杀处理装置
TWI826900B (zh) * 2021-03-03 2023-12-21 日商斯庫林集團股份有限公司 電漿產生裝置及基板處理裝置
CN113099599B (zh) * 2021-04-26 2022-04-26 北京农学院 一种滑动弧放电反应装置及杀菌方法
KR102574829B1 (ko) * 2021-05-11 2023-09-06 박영희 섬유 원단의 표면 개질을 위한 저온진공 플라스마장치의 전극구조

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05251198A (ja) * 1992-03-03 1993-09-28 Kimoto & Co Ltd グロー放電プラズマ発生用電極及びこの電極を用いた反応装置
JPH07296993A (ja) * 1994-04-26 1995-11-10 Shimada Phys & Chem Ind Co Ltd プラズマ発生装置
JPH0950898A (ja) * 1995-08-08 1997-02-18 Hitachi Ltd プラズマ処理装置
JPH10172792A (ja) * 1996-12-05 1998-06-26 Tokyo Electron Ltd プラズマ処理装置
JP2000008296A (ja) * 1998-06-19 2000-01-11 Oji Paper Co Ltd 着色紙

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04167481A (ja) * 1990-10-31 1992-06-15 Hitachi Cable Ltd 気体レーザ
KR0130733B1 (ko) * 1994-04-21 1998-04-14 문재덕 저온 플라즈마 발생용 방전장치
JP3078466B2 (ja) * 1995-05-24 2000-08-21 松下電工株式会社 大気圧プラズマ発生装置及びその装置を用いた大気圧プラズマ発生方法
JP3288228B2 (ja) * 1996-05-24 2002-06-04 積水化学工業株式会社 放電プラズマ処理方法
US5872426A (en) * 1997-03-18 1999-02-16 Stevens Institute Of Technology Glow plasma discharge device having electrode covered with perforated dielectric
US6147452A (en) * 1997-03-18 2000-11-14 The Trustees Of The Stevens Institute Of Technology AC glow plasma discharge device having an electrode covered with apertured dielectric
JPH11106531A (ja) * 1997-10-06 1999-04-20 Sekisui Chem Co Ltd 放電プラズマ処理装置
US6027616A (en) * 1998-05-01 2000-02-22 Mse Technology Applications, Inc. Extraction of contaminants from a gas
US6118218A (en) * 1999-02-01 2000-09-12 Sigma Technologies International, Inc. Steady-state glow-discharge plasma at atmospheric pressure
US6632323B2 (en) * 2001-01-31 2003-10-14 Plasmion Corporation Method and apparatus having pin electrode for surface treatment using capillary discharge plasma

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05251198A (ja) * 1992-03-03 1993-09-28 Kimoto & Co Ltd グロー放電プラズマ発生用電極及びこの電極を用いた反応装置
JPH07296993A (ja) * 1994-04-26 1995-11-10 Shimada Phys & Chem Ind Co Ltd プラズマ発生装置
JPH0950898A (ja) * 1995-08-08 1997-02-18 Hitachi Ltd プラズマ処理装置
JPH10172792A (ja) * 1996-12-05 1998-06-26 Tokyo Electron Ltd プラズマ処理装置
JP2000008296A (ja) * 1998-06-19 2000-01-11 Oji Paper Co Ltd 着色紙

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
PATENT ABSTRACTS OF JAPAN *
See also references of EP1366647A4 *

Cited By (31)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6821379B2 (en) 2001-12-21 2004-11-23 The Procter & Gamble Company Portable apparatus and method for treating a workpiece
US6841201B2 (en) 2001-12-21 2005-01-11 The Procter & Gamble Company Apparatus and method for treating a workpiece using plasma generated from microwave radiation
WO2003056602A1 (fr) * 2001-12-21 2003-07-10 The Procter & Gamble Company Appareil portatif et procede de traitement d'une piece a usiner
US6759100B2 (en) * 2002-06-10 2004-07-06 Konica Corporation Layer formation method, and substrate with a layer formed by the method
EP1594161A4 (fr) * 2003-02-03 2008-10-22 Octec Inc Dispositif de traitement par plasma, plaque electrode de dispositif de traitement par plasma et procede de production de plaque electrode
EP1594161A1 (fr) * 2003-02-03 2005-11-09 Octec Inc. Dispositif de traitement par plasma, plaque electrode de dispositif de traitement par plasma et procede de production de plaque electrode
US7922862B2 (en) 2003-02-03 2011-04-12 Octec Inc. Plasma processing apparatus, electrode plate for plasma processing apparatus, and electrode plate manufacturing method
US7585386B2 (en) 2003-02-03 2009-09-08 Octec Inc. Plasma processing apparatus, electrode plate for plasma processing apparatus, and electrode plate manufacturing method
JP2005063973A (ja) * 2003-08-14 2005-03-10 Fuji Photo Film Bv プラズマを形成するための装置および方法ならびに電極
US7256296B2 (en) 2004-09-22 2007-08-14 Symyx Technologies, Inc. Heterocycle-amine ligands, compositions, complexes, and catalysts
US8501106B2 (en) 2005-09-16 2013-08-06 Toyo Advanced Technologies Co., Ltd. Plasma generation system and plasma generation method
US8168130B2 (en) 2005-09-16 2012-05-01 Toyo Advanced Technologies Co., Ltd. Plasma generation system and plasma generation method
DE102006011312A1 (de) * 2006-03-11 2007-10-04 Fachhochschule Hildesheim/Holzminden/Göttingen Vorrichtung zur Plasmabehandlung unter Atmosphärendruck
DE102006011312B4 (de) * 2006-03-11 2010-04-15 Fachhochschule Hildesheim/Holzminden/Göttingen - Körperschaft des öffentlichen Rechts - Vorrichtung zur Plasmabehandlung unter Atmosphärendruck
US8136481B2 (en) 2006-03-11 2012-03-20 Fachhochschule Hildesheim/Holzminden/Goettingen Device for plasma treatment at atmospheric pressure
DE102008028167A1 (de) * 2008-06-12 2009-12-31 Maschinenfabrik Reinhausen Gmbh Vorrichtung zur Erzeugung eines Plasma-Jets
JP2010157483A (ja) * 2009-01-05 2010-07-15 Samsung Electro-Mechanics Co Ltd プラズマ発生装置
DE102011000261A1 (de) * 2011-01-21 2012-07-26 Hochschule für angewandte Wissenschaft und Kunst Fachhochschule Hildesheim/Holzminden/Göttingen Dielektrische Koplanarentladungsquelle für eine Oberflächenbehandlung unter Atmosphärendruck
CN102215626A (zh) * 2011-05-23 2011-10-12 中国科学院物理研究所 一种可在较低电压条件下产生放电等离子体的装置
EP2744307A2 (fr) * 2011-08-11 2014-06-18 Korea Institute of Machinery & Materials Appareil de génération de plasma, procédé de fabrication d'électrodes rotatives pour appareil de génération de plasma, procédé de traitement par plasma de substrat, et procédé permettant de former une couche mince de structure mélangée au moyen de plasma
EP2744307A4 (fr) * 2011-08-11 2015-01-14 Korea Mach & Materials Inst Appareil de génération de plasma, procédé de fabrication d'électrodes rotatives pour appareil de génération de plasma, procédé de traitement par plasma de substrat, et procédé permettant de former une couche mince de structure mélangée au moyen de plasma
US9373484B2 (en) 2011-08-11 2016-06-21 Korea Institute Of Machinery & Materials Plasma generator, manufacturing method of rotating electrode for plasma generator, method for performing plasma treatment of substrate, and method for forming thin film having mixed structure by using plasma
CN102755819A (zh) * 2012-08-02 2012-10-31 桂林市世环废气处理设备有限公司 低温等离子氧化器及低温等离子除臭系统
CN102755819B (zh) * 2012-08-02 2014-04-16 桂林市世环废气处理设备有限公司 低温等离子氧化器及低温等离子除臭系统
CN105792495A (zh) * 2016-05-03 2016-07-20 河北大学 一种产生大气压均匀等离子体刷的装置和方法
CN108601191A (zh) * 2018-05-21 2018-09-28 王逸人 阵列式双介质阻挡放电装置
WO2020126910A1 (fr) * 2018-12-21 2020-06-25 Evatec Ag Appareil de traitement sous vide et procédé de traitement par plasma sous vide d'au moins un substrat ou de fabrication d'un substrat
CN113169025A (zh) * 2018-12-21 2021-07-23 瑞士艾发科技 用于真空等离子体处理至少一个衬底或用于制造衬底的真空处理设备和方法
CN111389189A (zh) * 2020-03-11 2020-07-10 北京化工大学 一种可穿戴式等离子体降解危险化学品的装置及方法
CN114551194A (zh) * 2022-02-18 2022-05-27 四川大学 一种等离子体刻蚀装置
CN114551194B (zh) * 2022-02-18 2024-02-06 四川大学 一种等离子体刻蚀装置

Also Published As

Publication number Publication date
TWI244879B (en) 2005-12-01
JP3990285B2 (ja) 2007-10-10
KR20020066467A (ko) 2002-08-19
JP2004527073A (ja) 2004-09-02
CN1228999C (zh) 2005-11-23
EP1366647A4 (fr) 2007-08-08
CN1491527A (zh) 2004-04-21
KR100464902B1 (ko) 2005-01-05
EP1366647A1 (fr) 2003-12-03

Similar Documents

Publication Publication Date Title
US6441554B1 (en) Apparatus for generating low temperature plasma at atmospheric pressure
EP1366647A1 (fr) Appareil de production de plasma a basse temperature et a pression atmospherique
Wagner et al. The barrier discharge: basic properties and applications to surface treatment
EP1171900B1 (fr) Jet de plasma grande surface a la pression atmospherique
US7572998B2 (en) Method and device for creating a micro plasma jet
Schutze et al. The atmospheric-pressure plasma jet: a review and comparison to other plasma sources
Kong et al. Electrically efficient production of a diffuse nonthermal atmospheric plasma
KR20000076338A (ko) 글로우 플라즈마 방전 장치
WO2004001790A1 (fr) Appareil de decharge a barriere dielectrique et procede de traitement d'un substrat
EA030378B1 (ru) Источник плазмы для нанесения тонкопленочных покрытий с использованием плазменно-химического осаждения из газовой фазы (варианты)
WO2007035182A2 (fr) Électrodes à champ amplifié de processeur au plasma non thermique à injection d’additif
KR20200091167A (ko) 유전체 장벽 대기압 플라즈마 발생장치
Boulos et al. Basic concepts of plasma generation
KR100430345B1 (ko) 대기압에서 저온 플라즈마를 발생시키는 장치
KR200253571Y1 (ko) 대기압에서 저온 플라즈마를 발생시키는 장치
EP2317829B1 (fr) Dispositif de reformage de gaz et son procédé de fonctionnement
KR100507334B1 (ko) 대기압 프라즈마 가속장치
KR100507335B1 (ko) 대기압 프라즈마 가속 발생장치
KR100672230B1 (ko) 동공 음극 플라즈마 장치
KR100422108B1 (ko) 대기압에서 글로우 방전 플라즈마를 발생시키는 장치
KR100460601B1 (ko) 플라즈마 발생용 복합소재 전극 및 그 제조방법
KR20040001189A (ko) 상압플라즈마를 이용한 표면처리장치
KR200288939Y1 (ko) 상압플라즈마를 이용한 표면처리장치
Ermel et al. Spatially resolved energy distribution measurements of dielectric barrier discharges in a cylinder–plane electrode arrangement
ABIDAT et al. ELECTRICAL CHARACTERISTICS SIMULATION OF HOMOGENEOUS DBD AT ATMOSPHERIC PRESSURE. APPLICATION TO HELIUM AND ARGON PLASMAS.

Legal Events

Date Code Title Description
AK Designated states

Kind code of ref document: A1

Designated state(s): AE AG AL AM AT AU AZ BA BB BG BR BY BZ CA CH CN CO CR CU CZ DE DK DM DZ EC EE ES FI GB GD GE GH GM HR HU ID IL IN IS JP KE KG KP KZ LC LK LR LS LT LU LV MA MD MG MK MN MW MX MZ NO NZ OM PH PL PT RO RU SD SE SG SI SK SL TJ TM TN TR TT TZ UA UG UZ VN YU ZA ZM ZW

AL Designated countries for regional patents

Kind code of ref document: A1

Designated state(s): GH GM KE LS MW MZ SD SL SZ TZ UG ZM ZW AM AZ BY KG KZ MD RU TJ TM AT BE CH CY DE DK ES FI FR GB GR IE IT LU MC NL PT SE TR BF BJ CF CG CI CM GA GN GQ GW ML MR NE SN TD TG

121 Ep: the epo has been informed by wipo that ep was designated in this application
DFPE Request for preliminary examination filed prior to expiration of 19th month from priority date (pct application filed before 20040101)
WWE Wipo information: entry into national phase

Ref document number: 2002700834

Country of ref document: EP

Ref document number: 2002565398

Country of ref document: JP

Ref document number: 028048792

Country of ref document: CN

WWP Wipo information: published in national office

Ref document number: 2002700834

Country of ref document: EP

REG Reference to national code

Ref country code: DE

Ref legal event code: 8642