EP1366647A1 - Appareil de production de plasma a basse temperature et a pression atmospherique - Google Patents
Appareil de production de plasma a basse temperature et a pression atmospheriqueInfo
- Publication number
- EP1366647A1 EP1366647A1 EP02700834A EP02700834A EP1366647A1 EP 1366647 A1 EP1366647 A1 EP 1366647A1 EP 02700834 A EP02700834 A EP 02700834A EP 02700834 A EP02700834 A EP 02700834A EP 1366647 A1 EP1366647 A1 EP 1366647A1
- Authority
- EP
- European Patent Office
- Prior art keywords
- electrodes
- plasma
- discharge
- power supply
- temperature plasma
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
- 239000004020 conductor Substances 0.000 claims abstract description 14
- 239000003989 dielectric material Substances 0.000 claims abstract description 14
- 230000005684 electric field Effects 0.000 claims abstract description 9
- 239000012495 reaction gas Substances 0.000 claims abstract description 3
- 229910052751 metal Inorganic materials 0.000 claims description 7
- 239000002184 metal Substances 0.000 claims description 7
- 229910052582 BN Inorganic materials 0.000 claims description 2
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 claims description 2
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 2
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 2
- 239000011521 glass Substances 0.000 claims description 2
- CPLXHLVBOLITMK-UHFFFAOYSA-N magnesium oxide Inorganic materials [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 claims description 2
- 239000000395 magnesium oxide Substances 0.000 claims description 2
- AXZKOIWUVFPNLO-UHFFFAOYSA-N magnesium;oxygen(2-) Chemical compound [O-2].[Mg+2] AXZKOIWUVFPNLO-UHFFFAOYSA-N 0.000 claims description 2
- 239000010453 quartz Substances 0.000 claims description 2
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims description 2
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 2
- 239000011810 insulating material Substances 0.000 claims 1
- 238000006243 chemical reaction Methods 0.000 abstract description 4
- 238000009825 accumulation Methods 0.000 abstract description 3
- 239000007789 gas Substances 0.000 description 10
- 239000000463 material Substances 0.000 description 9
- 238000000746 purification Methods 0.000 description 9
- 238000004659 sterilization and disinfection Methods 0.000 description 8
- 230000000977 initiatory effect Effects 0.000 description 7
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 6
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 description 6
- 230000004888 barrier function Effects 0.000 description 5
- 238000004043 dyeing Methods 0.000 description 5
- 238000012423 maintenance Methods 0.000 description 5
- 238000000034 method Methods 0.000 description 5
- 239000010409 thin film Substances 0.000 description 5
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 4
- 230000008901 benefit Effects 0.000 description 4
- 238000004140 cleaning Methods 0.000 description 4
- 238000002485 combustion reaction Methods 0.000 description 4
- 230000008021 deposition Effects 0.000 description 4
- 238000000151 deposition Methods 0.000 description 4
- 238000010891 electric arc Methods 0.000 description 4
- 230000005611 electricity Effects 0.000 description 4
- 239000000446 fuel Substances 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- 238000005498 polishing Methods 0.000 description 4
- 238000007639 printing Methods 0.000 description 4
- 230000001954 sterilising effect Effects 0.000 description 4
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 3
- 238000007599 discharging Methods 0.000 description 3
- 238000005530 etching Methods 0.000 description 3
- 239000000835 fiber Substances 0.000 description 3
- 239000001307 helium Substances 0.000 description 3
- 229910052734 helium Inorganic materials 0.000 description 3
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 3
- 229910052757 nitrogen Inorganic materials 0.000 description 3
- 239000001301 oxygen Substances 0.000 description 3
- 229910052760 oxygen Inorganic materials 0.000 description 3
- 239000000123 paper Substances 0.000 description 3
- 239000005060 rubber Substances 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 238000003786 synthesis reaction Methods 0.000 description 3
- 239000008399 tap water Substances 0.000 description 3
- 235000020679 tap water Nutrition 0.000 description 3
- 239000002351 wastewater Substances 0.000 description 3
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 2
- 239000004677 Nylon Substances 0.000 description 2
- ATUOYWHBWRKTHZ-UHFFFAOYSA-N Propane Chemical compound CCC ATUOYWHBWRKTHZ-UHFFFAOYSA-N 0.000 description 2
- 229910052786 argon Inorganic materials 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 229920001778 nylon Polymers 0.000 description 2
- 239000004033 plastic Substances 0.000 description 2
- 229920003023 plastic Polymers 0.000 description 2
- 238000002360 preparation method Methods 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 229920003002 synthetic resin Polymers 0.000 description 2
- 239000000057 synthetic resin Substances 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 239000004593 Epoxy Substances 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- 239000012620 biological material Substances 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 238000001784 detoxification Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 125000004435 hydrogen atom Chemical class [H]* 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 230000006698 induction Effects 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 230000007935 neutral effect Effects 0.000 description 1
- 238000006552 photochemical reaction Methods 0.000 description 1
- 238000009832 plasma treatment Methods 0.000 description 1
- 230000010287 polarization Effects 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 239000001294 propane Substances 0.000 description 1
- 230000009257 reactivity Effects 0.000 description 1
- 238000005389 semiconductor device fabrication Methods 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 238000004381 surface treatment Methods 0.000 description 1
- TXEYQDLBPFQVAA-UHFFFAOYSA-N tetrafluoromethane Chemical compound FC(F)(F)F TXEYQDLBPFQVAA-UHFFFAOYSA-N 0.000 description 1
- 230000001988 toxicity Effects 0.000 description 1
- 231100000419 toxicity Toxicity 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32018—Glow discharge
- H01J37/32036—AC powered
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
- H05H1/00—Generating plasma; Handling plasma
- H05H1/24—Generating plasma
- H05H1/48—Generating plasma using an arc
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32018—Glow discharge
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
- H05H1/00—Generating plasma; Handling plasma
- H05H1/24—Generating plasma
- H05H1/2406—Generating plasma using dielectric barrier discharges, i.e. with a dielectric interposed between the electrodes
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
- H05H2245/00—Applications of plasma devices
- H05H2245/10—Treatment of gases
- H05H2245/17—Exhaust gases
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
- H05H2245/00—Applications of plasma devices
- H05H2245/30—Medical applications
- H05H2245/36—Sterilisation of objects, liquids, volumes or surfaces
Definitions
- the present invention relates to an apparatus for generating low-temperature plasma in a high density at atmospheric pressure with low discharge initiation and maintenance voltages.
- plasma is defined as a partially ionized gas composed of a nearly equal number of positive and negative free charges so that it is electrically neutral.
- plasma is of very high reactivity, chemically and physically.
- Low-temperature plasma is used to synthesize various materials, such as metals, semiconductors, polymers, nylon, plastic, paper, fiber, and ozone, or to modify surface properties of materials with a concomitant improvement in various physical and chemical properties such as junction strength, dyeing properties, printability, etc. Accordingly, low-temperature plasma finds numerous applications in semiconductor, metal, ceramic thin film synthesis, and cleaning fields.
- low-temperature plasma can be generated in a vacuum vessel of low pressure.
- an apparatus which is expensive on the whole.
- materials to be treated are large in size, it is difficult to apply plasma to them.
- Another problem with plasma treatment is difficulty in automation of plasma processes. Further to these, plasma has difficulty in treating materials which show high vapor pressures or are degassed, such as rubber, biomaterials, etc.
- a corona discharge is a discharge of electricity appearing as a bluish-purple glow on the surface of and adjacent to a conductor when the voltage gradient exceeds a critical value.
- streamer plasma is generated from the electrodes.
- a dielectric barrier discharge utilizes the charge accumulation resulting from dielectric polarization to form a reverse potential at which the discharge is halted, that is, it takes advantage of a pulse discharge, thereby preventing the development of arc discharges.
- plasma is generated in the form of a streamer that is not homogeneous and is low in density. Additionally, because the gap between two electrodes is narrow, a corona discharge is difficult to apply to targets of three-dimensional shape. Also, other problems with the coronal discharge include noise generation and a short electrode lifetime.
- the dielectric barrier discharge does not ensure the generation of homogenous, diffused plasma over a large area, as in the corona discharge.
- the dielectric barrier discharge is low in plasma density, and the distance between two electrodes is so narrow as to limit the size and shape of a target to be treated.
- gases with high discharge initiation and maintenance potentials such as argon, oxygen and nitrogen, are used, both the corona discharge and the dielectric barrier discharge techniques require a high-voltage power supply.
- the power supply is difficult to operate and manage because of its being expensive and high in electricity consumption.
- an apparatus for generating low-temperature plasma at atmospheric pressure comprising: a couple of electrodes facing each other at a distance, one of them being connected to a power supply, the other being grounded; a couple of dielectrics with a thickness of 25 ⁇ m-10 mm, positioned on the facing surfaces of the electrodes in such a way as to face each other, one of them having at least one discharge gap therein; and a conductor electrode having at least one tip positioned within the discharge gap, in which an electric field is applied at an intensity of 1-100 KV/cm through the power supply across the electrodes by use of a pulse direct current or an alternating current in a frequency bandwidth of 50 Hz-10 GHz while a reaction gas is fed between the electrodes .
- the plasma generated from the apparatus of the present invention is suitable to form radicals of high energy, which have numerous applications in various fields, including bonding, polishing, cleaning, thin films deposition, sterilization, disinfection, ozone generation, printing, dyeing, etching of various materials such as metal, rubber, fibers, paper, synthetic resins and semiconductors.
- application fields of the plasma include purification of tap water and waste water, purification of air and automobile exhaust gas such as SO x and NO x , combustion of fuels, manufacture of highly luminous lamps, etc.
- Fig. 1 is a schematic diagram showing a plate structure of electrodes in a cross sectional view, suitable for use in an apparatus for generating low-temperature plasma at atmospheric pressure, in accordance with a first embodiment of the present invention
- Fig. 2 is a schematic diagram showing a tube structure of electrodes in a cross sectional view, suitable for use in an apparatus for generating low-temperature plasma at atmospheric pressure in accordance with a second embodiment of the present invention.
- Fig. 3 provides illustrations of tips provided to conductor electrodes.
- FIG. 1 there is an electrode structure seen in a cross sectional view, suitable for use in an apparatus for generating low-temperature plasma at atmospheric pressure, in accordance with a first embodiment of the present invention.
- the present invention employs a plate structure of electrodes in generating low-temperature plasma at atmospheric pressure.
- the apparatus has a couple of electrodes 1 and 2 which are positioned to face each other in accordance with the present invention.
- One of the two electrodes is connected to a power supply 6 while the other electrode is grounded.
- the grounded electrode is an anode 2 and the electrode connected to the power supply 6 is set as a cathode 1.
- both electrodes are made of metal such as stainless steel, aluminum or copper.
- each of the dielectrics 3 and 4 is mounted on each of the electrodes 1 and 2, respectively, and arranged in such a way as to face each other.
- each of the dielectrics 3 and 4 preferably ranges in thickness from 25 ⁇ m to 10 mm.
- discharge gaps 7 are provided which run through the dielectric 3 perpendicularly to its surface.
- the dielectric 4 mounted onto the surface of the grounded electrode 2 has no discharge gaps.
- one dielectric with perpendicularly perforating discharge gaps is mounted on the electrode 1 connected to the power supply ⁇ and another dielectric with no discharge gaps is mounted on the grounded electrode 2, after which the two dielectrics are positioned in such a way as to face each other.
- conductor electrodes 5 with a certain width (a) and a certain height (b) are positioned within each discharge gap 7.
- the conductor electrodes 5 have tips 8, 8' or 8" which may be in a form shown in Fig. 3A, 3B or 3C.
- the conductor electrodes 5 accumulate charges at the tips 8, 8' or 8" which facilitate the discharging of the accumulated charges.
- the tips 8, 8' or 8" function to control the width (a) and height (b) of each of the discharge gaps 7.
- the tips formed on the conductor electrode 5 may be pointed, square or curved 1 in shape. Other various shapes may be applied to the tips.
- the tips Preferably, the tips have a height (b) 0.1-20 times as long as their width (a) while being present at a density of 1-100 per length of 10 mm.
- the apparatus having a plate structure of electrodes is illustrated to have the dielectric 3 on the electrode 1 connected to the power supply 6 and the dielectric 4 on the electrode grounded, it should be understood that the present invention is not limited to this, but may have various structures.
- the electrodes 1 and 2 on which the dielectrics 3 and 4 are to be positioned may be changed in position.
- the dielectric 3 with discharge gaps 7 is mounted onto the ground electrode 2 while the dielectric 4 lacking discharge gaps 7 is mounted onto the electrode 1 connected to the power supply 6. Additionally, when a dielectric with discharge gaps 7 may be mounted on one of the electrodes 1 and 2, the remaining one may be provided with no dielectrics.
- the dielectrics are required to be resistant to high temperatures and have superior dielectric properties.
- the dielectrics are made of a materials selected from the group consisting of glass, alumina, boron nitride, silicon carbide, silicon nitride, quartz, and magnesium oxide .
- the discharge gaps 7 which run perpendicularly through the dielectric preferably range in width (a) from 5 ⁇ m to 2 mm with a height (a) being 5-250 fold longer than the width
- FIG. 2 there is an electrode structure seen in a cross sectional view, suitable for use in an apparatus for generating low-temperature plasma at atmospheric pressure, in accordance with another embodiment of the present invention.
- the present invention adopts a tube structure of electrodes to an apparatus capable of low-temperature plasma generation at atmospheric pressure.
- a tubular electrode 1 ' to the inner circumference of which a dielectric 3' is attached.
- a cylindrical core electrode 2 ' which is concentric to the tubular electrode 1' is placed at a certain distance from the dielectric 3' attached to the inner surface of the tubular electrode 1 ' .
- Both ends of each electrode are fixed while being suitably insulated (not shown) .
- another dielectric 4' is fixed, with a plurality of discharge gaps 7' being provided at regular intervals in the dielectric 4' .
- each of the electrodes 3' and 4' may fall within the range set in the First Embodiment. Also, the same limitations as in the First Embodiment are placed on the width (a) and height (b) of the discharge gaps 7. On the outer circumference of the core electrode 2 are positioned conductor electrodes 5 with such a width (a) and a height (b) as to fit the discharge gaps 7. The conductor electrodes 5 are also provided with tips which have the shapes shown in Fig. 3.
- tubular electrode 1 ' is grounded, the core electrode 2 ' is connected to a power supply 6.
- various modifications can be made in arrangements, shapes and conformations of electrodes V and 2 ' and dielectrics 3' and 4' .
- an electric field is applied at an intensity of 1-100 KV/cm through the power supply 6 to the apparatuses of the First and the Second Embodiments, by use of a pulse direct current or an alternating current in a frequency bandwidth of 50 Hz-10 GHz. In the presence of such an electric field, discharging is conducted between the tips of the discharge gaps and the counter electrode, to generate plasma.
- homogeneous plasma of a large area can be generated stably.
- the plasma generated from the apparatuses of the present invention is applied to a variety of materials, such as metal, rubber, fibers, paper, and synthetic resins, e.g. plastics, nylon, epoxy, etc., to change surface properties of the materials to ones suitable for use in bonding, polishing, thin films deposition, dyeing, printing, etc.
- materials such as metal, rubber, fibers, paper, and synthetic resins, e.g. plastics, nylon, epoxy, etc.
- plasma can be directly applied for the removal of toxicity and the purification of contaminated air.
- plasma is used to make ozone which is utilized in sterilization and disinfection of tap water, purification of waste water, purification of automobile exhaust gases such as SO x and NO x , and complete combustion of fuels in automobile engines.
- plasma can be adopted to manufacture very bright lamps useful for photochemical reactions which can be applied to various surface treatment processes, including semiconductor device fabrication.
- reaction gases such as air, water vapor, oxygen, nitrogen, hydrogen, argon, helium, methane, ammonia, tetrafluoro carbon, aectylene, propane, etc
- reaction gases such as air, water vapor, oxygen, nitrogen, hydrogen, argon, helium, methane, ammonia, tetrafluoro carbon, aectylene, propane, etc
- This plasma is usefully utilized in bonding, polishing, cleaning, thin films deposition, sterilization, disinfection, ozone preparation, dyeing, printing, etching, purification of water, purification of air and automobile exhaust gases, complete combustion of fuels in automobile engines, manufacture of highly luminous lamps, etc.
- This experimental example employed the same plasma- generating apparatus as in Second Embodiment, which had a plate structure in which two electrode plates 1 and 2 were arranged to face each other and a dielectric is provided on each of the facing surfaces of the electrode plates 1 and 2.
- a plurality of discharge gaps 7, each being 200 ⁇ m width and 2 mm high were formed.
- tips 8 shaped as in Fig. 3a each having a width (a) of 2 mm and a height (b) of 1.5 mm, were provided.
- helium gas was introduced, while a direct current bipolar pulse electric source of 50 KHz was applied across the electrodes to discharge at atmospheric pressure.
- a discharge initiation voltage for helium gas was measured to be about 3.7 KV/cm. If the distance between the electrodes was 7 mm, about 2.6 KV was required as a discharge initiation potential.
- the apparatuses for generating low-temperature plasma of the present invention enjoy the following advantages:
- the apparatus for generating plasma at atmospheric pressure adapted for the induction of hollow cathode discharges, capillary discharges or highly accumulated electric fields, prevents the conversion of the plasma to arcs and thus gives stable, low-temperature plasma in a high density.
- the apparatus can initiate and maintain discharging at very low voltages, and utilizes a broad bandwidth of frequencies, in addition to being low in electricity consumption and being manufactured at a low cost.
- the apparatus can generate homogeneous plasma over a large area in a high density.
- the plasma is suitable to form radicals of high energy, which have numerous applications in various fields, including bonding, polishing, cleaning, thin films deposition, sterilization, disinfection, ozone preparation, printing, dyeing, etching, purification of tap water and waste water, purification of air and automobile exhaust gas, complete combustion of fuels, manufacture of highly luminous lamps, etc.
- the plasma can bring about excellent results and reduce the treatment time greatly.
Abstract
L'invention concerne un appareil de production de plasma à basse température et à pression atmosphérique. Cet appareil comprend: une paire d'électrodes disposées l'une en face de l'autre à une certaine distance, une de ces électrodes étant connectée à une alimentation et l'autre étant mise à la terre; une paire d'éléments diélectriques d'une épaisseur comprise entre 25νm et 10mm, positionnés sur les surfaces en regard des électrodes, de manière à être l'un en face de l'autre, un de ces éléments renfermant au moins un espace de décharge; et une électrode conductrice présentant au moins un embout positionné à l'intérieur de l'espace de décharge, un champ électrique étant appliqué à une intensité comprise entre 1 et 100KV/cm par l'intermédiaire de l'alimentation, via les électrodes, au moyen d'une impulsion de courant direct et de courant alternatif dans une largeur de bande de fréquence comprise entre 50Hz et 10 GHz, pendant qu'un gaz de réaction est alimenté entre les électrodes, de manière à induire une décharge de cathode creuse, une décharge capillaire ou une accumulation importante de charges à partir de l'espace de décharge. L'appareil selon l'invention empêche la formation d'arcs dans le plasma et permet d'obtenir un plasma de densité élevée stable à basse température.
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR10-2001-0006653A KR100464902B1 (ko) | 2001-02-12 | 2001-02-12 | 대기압에서 저온 플라즈마를 발생시키는 장치 |
KR2001006653 | 2001-02-12 | ||
PCT/KR2002/000202 WO2002065820A1 (fr) | 2001-02-12 | 2002-02-08 | Appareil de production de plasma a basse temperature et a pression atmospherique |
Publications (2)
Publication Number | Publication Date |
---|---|
EP1366647A1 true EP1366647A1 (fr) | 2003-12-03 |
EP1366647A4 EP1366647A4 (fr) | 2007-08-08 |
Family
ID=19705599
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
EP02700834A Withdrawn EP1366647A4 (fr) | 2001-02-12 | 2002-02-08 | Appareil de production de plasma a basse temperature et a pression atmospherique |
Country Status (6)
Country | Link |
---|---|
EP (1) | EP1366647A4 (fr) |
JP (1) | JP3990285B2 (fr) |
KR (1) | KR100464902B1 (fr) |
CN (1) | CN1228999C (fr) |
TW (1) | TWI244879B (fr) |
WO (1) | WO2002065820A1 (fr) |
Families Citing this family (61)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6841201B2 (en) | 2001-12-21 | 2005-01-11 | The Procter & Gamble Company | Apparatus and method for treating a workpiece using plasma generated from microwave radiation |
US6821379B2 (en) * | 2001-12-21 | 2004-11-23 | The Procter & Gamble Company | Portable apparatus and method for treating a workpiece |
KR100482554B1 (ko) * | 2002-03-06 | 2005-04-14 | 현대자동차주식회사 | 유전체에 돌출부가 형성된 평행 평판형 타입 플라즈마반응기 |
US6759100B2 (en) * | 2002-06-10 | 2004-07-06 | Konica Corporation | Layer formation method, and substrate with a layer formed by the method |
JP4472372B2 (ja) * | 2003-02-03 | 2010-06-02 | 株式会社オクテック | プラズマ処理装置及びプラズマ処理装置用の電極板 |
EP1507281B1 (fr) * | 2003-08-14 | 2007-05-16 | Fuji Film Manufacturing Europe B.V. | Arrangement, méthode et électrode pour engendrer un plasma |
KR100601394B1 (ko) * | 2004-08-20 | 2006-07-13 | 연세대학교 산학협력단 | 공기정화장치 |
KR200371074Y1 (ko) * | 2004-09-17 | 2004-12-29 | 주식회사 다원시스 | 대기압 플라즈마를 이용한 모발 염색장치 |
US7256296B2 (en) | 2004-09-22 | 2007-08-14 | Symyx Technologies, Inc. | Heterocycle-amine ligands, compositions, complexes, and catalysts |
KR100691875B1 (ko) * | 2005-03-25 | 2007-03-09 | 최진문 | 대기압 플라즈마 유전체 세정장치 |
EP1933605B1 (fr) * | 2005-09-16 | 2019-05-15 | Toyo Advanced Technologies Co., Ltd. | Dispositif et procede de generation de plasma |
JP4963360B2 (ja) * | 2006-01-31 | 2012-06-27 | 国立大学法人茨城大学 | 携帯型大気圧プラズマ発生装置 |
DE102006011312B4 (de) * | 2006-03-11 | 2010-04-15 | Fachhochschule Hildesheim/Holzminden/Göttingen - Körperschaft des öffentlichen Rechts - | Vorrichtung zur Plasmabehandlung unter Atmosphärendruck |
CN100434935C (zh) * | 2006-12-28 | 2008-11-19 | 河北大学 | 一种产生具有三种折射率的等离子体光子晶体的方法 |
JP4792604B2 (ja) * | 2007-04-17 | 2011-10-12 | 国立大学法人佐賀大学 | プラズマ滅菌装置 |
KR100861559B1 (ko) * | 2007-06-04 | 2008-10-02 | (주)에스이 플라즈마 | 전원 인가 전극에 결합되는 유전체 하면에 복수개의 분할전극이 부착된 구조의 전극부를 갖는 대기압 플라즈마발생장치 |
CN101376980B (zh) * | 2007-08-27 | 2011-09-21 | 宝山钢铁股份有限公司 | 一种改善带钢润湿性的工艺 |
DE102008028167A1 (de) * | 2008-06-12 | 2009-12-31 | Maschinenfabrik Reinhausen Gmbh | Vorrichtung zur Erzeugung eines Plasma-Jets |
KR101046335B1 (ko) | 2008-07-29 | 2011-07-05 | 피에스케이 주식회사 | 할로우 캐소드 플라즈마 발생방법 및 할로우 캐소드플라즈마를 이용한 대면적 기판 처리방법 |
CN101720163B (zh) * | 2008-10-10 | 2012-12-19 | 河南理工大学 | 大气压下介质阻挡类辉光放电反应器 |
CN101772253B (zh) * | 2008-12-26 | 2013-06-26 | 中国科学院空间科学与应用研究中心 | 一种等离子体产生装置 |
KR20100081068A (ko) * | 2009-01-05 | 2010-07-14 | 삼성전기주식회사 | 플라즈마 발생장치 |
KR100924112B1 (ko) * | 2009-02-10 | 2009-10-29 | 한국과학기술원 | 중공 전극을 가지는 방전셀에서 플라즈마를 발생하는 소자 |
KR101193380B1 (ko) * | 2009-07-13 | 2012-10-23 | 글로벌텍 주식회사 | 플라즈마 발생 장치 |
KR101150004B1 (ko) * | 2009-09-02 | 2012-05-31 | 한국기초과학지원연구원 | 액상 매질 플라즈마 방전 발생장치 |
KR101151277B1 (ko) * | 2009-12-01 | 2012-06-14 | 성균관대학교산학협력단 | 대기압 플라즈마를 이용한 기판의 이중 패터닝 방법 |
KR101160906B1 (ko) * | 2010-03-17 | 2012-06-28 | 최대규 | 용량 결합 플라즈마 반응기 |
KR101163643B1 (ko) * | 2010-05-04 | 2012-07-06 | (주)에스이피 | 대기압 플라즈마 장치 |
KR101307111B1 (ko) * | 2010-08-24 | 2013-09-11 | 닛신 이온기기 가부시기가이샤 | 플라즈마 발생 장치 |
CN102026468A (zh) * | 2010-11-23 | 2011-04-20 | 中国科学院等离子体物理研究所 | 一种介质阻挡电晕放电反应器 |
CN102036460B (zh) * | 2010-12-10 | 2013-01-02 | 西安交通大学 | 平板式等离子体发生装置 |
DE102011000261A1 (de) * | 2011-01-21 | 2012-07-26 | Hochschule für angewandte Wissenschaft und Kunst Fachhochschule Hildesheim/Holzminden/Göttingen | Dielektrische Koplanarentladungsquelle für eine Oberflächenbehandlung unter Atmosphärendruck |
US8760067B2 (en) * | 2011-04-04 | 2014-06-24 | Federal-Mogul Ignition Company | System and method for controlling arc formation in a corona discharge ignition system |
CN102215626B (zh) * | 2011-05-23 | 2012-12-12 | 中国科学院物理研究所 | 一种可在较低电压条件下产生放电等离子体的装置 |
KR101241951B1 (ko) * | 2011-08-11 | 2013-03-11 | 한국기계연구원 | 플라즈마 발생장치 및 기판의 플라즈마 처리방법 |
WO2013022306A2 (fr) * | 2011-08-11 | 2013-02-14 | 한국기계연구원 | Appareil de génération de plasma, procédé de fabrication d'électrodes rotatives pour appareil de génération de plasma, procédé de traitement par plasma de substrat, et procédé permettant de former une couche mince de structure mélangée au moyen de plasma |
JP2012140970A (ja) * | 2012-04-25 | 2012-07-26 | Nissan Motor Co Ltd | エンジン点火制御装置 |
WO2014007472A1 (fr) * | 2012-07-03 | 2014-01-09 | Plasmart Inc. | Appareil de génération de plasma et procédé de génération de plasma |
CN102755819B (zh) * | 2012-08-02 | 2014-04-16 | 桂林市世环废气处理设备有限公司 | 低温等离子氧化器及低温等离子除臭系统 |
CN103269556A (zh) * | 2013-05-14 | 2013-08-28 | 哈尔滨工业大学 | 大面积大气等离子体均匀放电电极 |
KR101439926B1 (ko) | 2013-06-11 | 2014-09-17 | 한국기계연구원 | 캐필러리부가 구비된 판상형 전극을 이용한 롤투롤 플라즈마 처리 시스템 |
CN104619106B (zh) * | 2015-01-15 | 2018-04-20 | 合肥工业大学 | 一种实现大气压下空气中均匀辉光放电的装置 |
CN105792495B (zh) * | 2016-05-03 | 2018-11-06 | 河北大学 | 一种产生大气压均匀等离子体刷的装置和方法 |
CN105951034A (zh) * | 2016-05-28 | 2016-09-21 | 上海大学 | 一种弹簧钢在低温等离子体下渗碳的方法 |
CN105951035A (zh) * | 2016-05-28 | 2016-09-21 | 上海大学 | 一种弹簧钢在低温等离子体下发蓝的方法 |
CN106577982A (zh) * | 2016-12-23 | 2017-04-26 | 浙江海洋大学 | 一种鱿鱼丝保鲜的方法 |
KR101941860B1 (ko) * | 2017-06-09 | 2019-01-25 | 한국과학기술연구원 | 기체 방전 살균 및 제독 기능을 가진 차량용 외장재, 이를 포함하는 차량 및 차량의 살균 및 제독을 위한 소독 시스템 |
KR20200069296A (ko) * | 2017-09-01 | 2020-06-16 | 솜니오 글로벌 홀딩스, 엘엘씨 | 자유 라디칼 생성기 및 사용 방법 |
AT520858A1 (de) * | 2018-01-30 | 2019-08-15 | Gerald Boehm | Vorrichtung und Verfahren zum Bilden eines Temperaturgradienten |
CN108601191B (zh) * | 2018-05-21 | 2020-09-15 | 王逸人 | 一种阵列式双介质阻挡放电装置 |
CN109545687B (zh) * | 2018-11-13 | 2020-10-30 | 中国科学院微电子研究所 | 基于交流电压下微波等离子体氧化的凹槽mosfet器件制造方法 |
CN109494147B (zh) | 2018-11-13 | 2020-10-30 | 中国科学院微电子研究所 | 基于交流电压下微波等离子体的碳化硅氧化方法 |
WO2020126910A1 (fr) * | 2018-12-21 | 2020-06-25 | Evatec Ag | Appareil de traitement sous vide et procédé de traitement par plasma sous vide d'au moins un substrat ou de fabrication d'un substrat |
CN109779948B (zh) * | 2019-01-17 | 2021-01-05 | 沈阳航空航天大学 | 一种用于提高轴流风机性能的等离子式叶顶间隙密封方法 |
CN109688689A (zh) * | 2019-02-20 | 2019-04-26 | 北京卓昱科技有限公司 | 一种宽间隙电子诱导等离子发生器 |
CN111389189A (zh) * | 2020-03-11 | 2020-07-10 | 北京化工大学 | 一种可穿戴式等离子体降解危险化学品的装置及方法 |
CN111773427B (zh) * | 2020-07-10 | 2021-07-23 | 深圳先进技术研究院 | 一种等离子体空气消杀处理装置 |
TWI826900B (zh) * | 2021-03-03 | 2023-12-21 | 日商斯庫林集團股份有限公司 | 電漿產生裝置及基板處理裝置 |
CN113099599B (zh) * | 2021-04-26 | 2022-04-26 | 北京农学院 | 一种滑动弧放电反应装置及杀菌方法 |
KR102574829B1 (ko) * | 2021-05-11 | 2023-09-06 | 박영희 | 섬유 원단의 표면 개질을 위한 저온진공 플라스마장치의 전극구조 |
CN114551194B (zh) * | 2022-02-18 | 2024-02-06 | 四川大学 | 一种等离子体刻蚀装置 |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2000016367A1 (fr) * | 1998-09-16 | 2000-03-23 | The Trustees Of The Stevens Institute Of Technology | Dispositif de decharge luminescente a plasma a courant alternatif pourvu d'une electrode recouverte d'un dielectrique perfore |
US6170668B1 (en) * | 1998-05-01 | 2001-01-09 | Mse Technology Applications, Inc. | Apparatus for extraction of contaminants from a gas |
WO2002061787A2 (fr) * | 2001-01-31 | 2002-08-08 | Plasmion Corporation | Procede et appareil presentant une electrode a broches pour un traitement de surface utilisant un plasma de decharge capillaire |
Family Cites Families (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH04167481A (ja) * | 1990-10-31 | 1992-06-15 | Hitachi Cable Ltd | 気体レーザ |
JP3121105B2 (ja) * | 1992-03-03 | 2000-12-25 | 株式会社きもと | グロー放電プラズマ発生用電極及びこの電極を用いた反応装置 |
KR0130733B1 (ko) * | 1994-04-21 | 1998-04-14 | 문재덕 | 저온 플라즈마 발생용 방전장치 |
JPH07296993A (ja) * | 1994-04-26 | 1995-11-10 | Shimada Phys & Chem Ind Co Ltd | プラズマ発生装置 |
JP3078466B2 (ja) * | 1995-05-24 | 2000-08-21 | 松下電工株式会社 | 大気圧プラズマ発生装置及びその装置を用いた大気圧プラズマ発生方法 |
JPH0950898A (ja) * | 1995-08-08 | 1997-02-18 | Hitachi Ltd | プラズマ処理装置 |
JP3288228B2 (ja) * | 1996-05-24 | 2002-06-04 | 積水化学工業株式会社 | 放電プラズマ処理方法 |
JPH10172792A (ja) * | 1996-12-05 | 1998-06-26 | Tokyo Electron Ltd | プラズマ処理装置 |
US5872426A (en) * | 1997-03-18 | 1999-02-16 | Stevens Institute Of Technology | Glow plasma discharge device having electrode covered with perforated dielectric |
JPH11106531A (ja) * | 1997-10-06 | 1999-04-20 | Sekisui Chem Co Ltd | 放電プラズマ処理装置 |
JP2000008296A (ja) * | 1998-06-19 | 2000-01-11 | Oji Paper Co Ltd | 着色紙 |
US6118218A (en) * | 1999-02-01 | 2000-09-12 | Sigma Technologies International, Inc. | Steady-state glow-discharge plasma at atmospheric pressure |
-
2001
- 2001-02-12 KR KR10-2001-0006653A patent/KR100464902B1/ko not_active IP Right Cessation
-
2002
- 2002-02-08 EP EP02700834A patent/EP1366647A4/fr not_active Withdrawn
- 2002-02-08 JP JP2002565398A patent/JP3990285B2/ja not_active Expired - Fee Related
- 2002-02-08 TW TW091102638A patent/TWI244879B/zh not_active IP Right Cessation
- 2002-02-08 CN CNB028048792A patent/CN1228999C/zh not_active Expired - Fee Related
- 2002-02-08 WO PCT/KR2002/000202 patent/WO2002065820A1/fr active Application Filing
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6170668B1 (en) * | 1998-05-01 | 2001-01-09 | Mse Technology Applications, Inc. | Apparatus for extraction of contaminants from a gas |
WO2000016367A1 (fr) * | 1998-09-16 | 2000-03-23 | The Trustees Of The Stevens Institute Of Technology | Dispositif de decharge luminescente a plasma a courant alternatif pourvu d'une electrode recouverte d'un dielectrique perfore |
WO2002061787A2 (fr) * | 2001-01-31 | 2002-08-08 | Plasmion Corporation | Procede et appareil presentant une electrode a broches pour un traitement de surface utilisant un plasma de decharge capillaire |
Non-Patent Citations (1)
Title |
---|
See also references of WO02065820A1 * |
Also Published As
Publication number | Publication date |
---|---|
JP2004527073A (ja) | 2004-09-02 |
KR20020066467A (ko) | 2002-08-19 |
CN1491527A (zh) | 2004-04-21 |
EP1366647A4 (fr) | 2007-08-08 |
TWI244879B (en) | 2005-12-01 |
KR100464902B1 (ko) | 2005-01-05 |
JP3990285B2 (ja) | 2007-10-10 |
CN1228999C (zh) | 2005-11-23 |
WO2002065820A1 (fr) | 2002-08-22 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US6441554B1 (en) | Apparatus for generating low temperature plasma at atmospheric pressure | |
WO2002065820A1 (fr) | Appareil de production de plasma a basse temperature et a pression atmospherique | |
Wagner et al. | The barrier discharge: basic properties and applications to surface treatment | |
EP1171900B1 (fr) | Jet de plasma grande surface a la pression atmospherique | |
US7572998B2 (en) | Method and device for creating a micro plasma jet | |
US5872426A (en) | Glow plasma discharge device having electrode covered with perforated dielectric | |
Laimer et al. | Recent Advances in the Research on Non‐Equilibrium Atmospheric Pressure Plasma Jets | |
Kong et al. | Electrically efficient production of a diffuse nonthermal atmospheric plasma | |
WO2004001790A1 (fr) | Appareil de decharge a barriere dielectrique et procede de traitement d'un substrat | |
WO2007035182A2 (fr) | Électrodes à champ amplifié de processeur au plasma non thermique à injection d’additif | |
KR100430345B1 (ko) | 대기압에서 저온 플라즈마를 발생시키는 장치 | |
Boulos et al. | Basic concepts of plasma generation | |
Chiper et al. | On the secondary discharge of an atmospheric-pressure pulsed DBD in He with impurities | |
KR200253571Y1 (ko) | 대기압에서 저온 플라즈마를 발생시키는 장치 | |
EP2317829B1 (fr) | Dispositif de reformage de gaz et son procédé de fonctionnement | |
KR100507334B1 (ko) | 대기압 프라즈마 가속장치 | |
KR20200091167A (ko) | 유전체 장벽 대기압 플라즈마 발생장치 | |
KR100507335B1 (ko) | 대기압 프라즈마 가속 발생장치 | |
KR100672230B1 (ko) | 동공 음극 플라즈마 장치 | |
Pessoa et al. | Hollow cathode discharges: low and high-pressure operation | |
KR100422108B1 (ko) | 대기압에서 글로우 방전 플라즈마를 발생시키는 장치 | |
KR100460601B1 (ko) | 플라즈마 발생용 복합소재 전극 및 그 제조방법 | |
KR20040001189A (ko) | 상압플라즈마를 이용한 표면처리장치 | |
KR200288939Y1 (ko) | 상압플라즈마를 이용한 표면처리장치 | |
ABIDAT et al. | ELECTRICAL CHARACTERISTICS SIMULATION OF HOMOGENEOUS DBD AT ATMOSPHERIC PRESSURE. APPLICATION TO HELIUM AND ARGON PLASMAS. |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
PUAI | Public reference made under article 153(3) epc to a published international application that has entered the european phase |
Free format text: ORIGINAL CODE: 0009012 |
|
17P | Request for examination filed |
Effective date: 20030812 |
|
AK | Designated contracting states |
Kind code of ref document: A1 Designated state(s): AT BE CH CY DE DK ES FI FR GB GR IE IT LI LU MC NL PT SE TR |
|
AX | Request for extension of the european patent |
Extension state: AL LT LV MK RO SI |
|
A4 | Supplementary search report drawn up and despatched |
Effective date: 20070711 |
|
17Q | First examination report despatched |
Effective date: 20071024 |
|
STAA | Information on the status of an ep patent application or granted ep patent |
Free format text: STATUS: THE APPLICATION IS DEEMED TO BE WITHDRAWN |
|
18D | Application deemed to be withdrawn |
Effective date: 20080304 |