WO2002063695A1 - Transistor bipolaire à grille isolée, dispositif à semi-conducteurs, et procédés de fabrication correspondants - Google Patents

Transistor bipolaire à grille isolée, dispositif à semi-conducteurs, et procédés de fabrication correspondants Download PDF

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Publication number
WO2002063695A1
WO2002063695A1 PCT/JP2001/000777 JP0100777W WO02063695A1 WO 2002063695 A1 WO2002063695 A1 WO 2002063695A1 JP 0100777 W JP0100777 W JP 0100777W WO 02063695 A1 WO02063695 A1 WO 02063695A1
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WO
WIPO (PCT)
Prior art keywords
semiconductor device
insulated
bipolar transistor
gate bipolar
manufacturing
Prior art date
Application number
PCT/JP2001/000777
Other languages
English (en)
French (fr)
Inventor
Hideki Takahashi
Yoshifumi Tomomatsu
Mituharu Tabata
Original Assignee
Mitsubishi Denki Kabushiki Kaisha
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Filing date
Publication date
Application filed by Mitsubishi Denki Kabushiki Kaisha filed Critical Mitsubishi Denki Kabushiki Kaisha
Priority to PCT/JP2001/000777 priority Critical patent/WO2002063695A1/ja
Priority to US10/239,212 priority patent/US6734497B2/en
Priority to KR10-2002-7012595A priority patent/KR100485556B1/ko
Priority to DE60139386T priority patent/DE60139386D1/de
Priority to EP01273674A priority patent/EP1271653B1/en
Priority to JP2002563540A priority patent/JP4657578B2/ja
Publication of WO2002063695A1 publication Critical patent/WO2002063695A1/ja

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    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304—Transistor
    • H01L2924/1305—Bipolar Junction Transistor [BJT]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304—Transistor
    • H01L2924/1305—Bipolar Junction Transistor [BJT]
    • H01L2924/13055—Insulated gate bipolar transistor [IGBT]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304—Transistor
    • H01L2924/1306—Field-effect transistor [FET]
    • H01L2924/13091—Metal-Oxide-Semiconductor Field-Effect Transistor [MOSFET]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/14—Integrated circuits
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
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    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181—Encapsulation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
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    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/19—Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
    • H01L2924/191—Disposition
    • H01L2924/19101—Disposition of discrete passive components
    • H01L2924/19107—Disposition of discrete passive components off-chip wires
    • H—ELECTRICITY
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    • H01L2924/30—Technical effects
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    • H01L2924/3011—Impedance

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  • Engineering & Computer Science (AREA)
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  • Microelectronics & Electronic Packaging (AREA)
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  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Bipolar Transistors (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
PCT/JP2001/000777 2001-02-02 2001-02-02 Transistor bipolaire à grille isolée, dispositif à semi-conducteurs, et procédés de fabrication correspondants WO2002063695A1 (fr)

Priority Applications (6)

Application Number Priority Date Filing Date Title
PCT/JP2001/000777 WO2002063695A1 (fr) 2001-02-02 2001-02-02 Transistor bipolaire à grille isolée, dispositif à semi-conducteurs, et procédés de fabrication correspondants
US10/239,212 US6734497B2 (en) 2001-02-02 2001-02-02 Insulated gate bipolar transistor, semiconductor device, method of manufacturing insulated-gate bipolar transistor, and method of manufacturing semiconductor device
KR10-2002-7012595A KR100485556B1 (ko) 2001-02-02 2001-02-02 절연 게이트형 바이폴라 트랜지스터, 반도체 장치, 절연게이트형 바이폴라 트랜지스터의 제조 방법 및 반도체장치의 제조 방법
DE60139386T DE60139386D1 (de) 2001-02-02 2001-02-02 Halbleiteranordnung mit einem bipolartransistor mit isoliertem gate und einer freilaufdiode
EP01273674A EP1271653B1 (en) 2001-02-02 2001-02-02 Semiconductor device comprising an insulated gate bipolar transistor and a free-wheel diode
JP2002563540A JP4657578B2 (ja) 2001-02-02 2001-02-02 絶縁ゲート型バイポーラトランジスタ、半導体装置、絶縁ゲート型バイポーラトランジスタの製造方法、および半導体装置の製造方法

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PCT/JP2001/000777 WO2002063695A1 (fr) 2001-02-02 2001-02-02 Transistor bipolaire à grille isolée, dispositif à semi-conducteurs, et procédés de fabrication correspondants

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DE10245050B4 (de) * 2002-09-26 2005-09-22 Infineon Technologies Ag IGBT mit integriertem Freilaufelement und Halbleiterschaltungsanordnung
DE10314604B4 (de) * 2003-03-31 2006-07-27 Infineon Technologies Ag IGBT-Anordnung mit Reverse-Diodenfunktion
CN103346085A (zh) * 2013-07-02 2013-10-09 江苏博普电子科技有限责任公司 一种提高双极型晶体管BVcbo的生产工艺
US9018674B2 (en) 2012-04-06 2015-04-28 Infineon Technologies Ag Reverse conducting insulated gate bipolar transistor
CN110739305A (zh) * 2018-07-19 2020-01-31 株式会社村田制作所 半导体装置
WO2020240728A1 (ja) * 2019-05-29 2020-12-03 三菱電機株式会社 半導体装置、および、半導体装置の製造方法

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US6831329B2 (en) * 2001-10-26 2004-12-14 Fairchild Semiconductor Corporation Quick punch through IGBT having gate-controllable DI/DT and reduced EMI during inductive turn off
AU2003237543A1 (en) * 2002-05-20 2003-12-22 The Government Of The United States Of America, As Represented By The Secretary Of The Navy Double side igbt phase leg architecture and clocking method for reduced turn on loss
JP2005057235A (ja) * 2003-07-24 2005-03-03 Mitsubishi Electric Corp 絶縁ゲート型バイポーラトランジスタ及びその製造方法、並びに、インバータ回路
JP4799829B2 (ja) * 2003-08-27 2011-10-26 三菱電機株式会社 絶縁ゲート型トランジスタ及びインバータ回路
JP4867140B2 (ja) * 2004-07-01 2012-02-01 富士電機株式会社 半導体装置
JP5157247B2 (ja) * 2006-10-30 2013-03-06 三菱電機株式会社 電力半導体装置
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US8049276B2 (en) 2009-06-12 2011-11-01 Fairchild Semiconductor Corporation Reduced process sensitivity of electrode-semiconductor rectifiers
JP2011023527A (ja) * 2009-07-15 2011-02-03 Toshiba Corp 半導体装置
US8564097B2 (en) * 2010-04-15 2013-10-22 Sinopower Semiconductor, Inc. Reverse conducting IGBT
JP2012069579A (ja) * 2010-09-21 2012-04-05 Toshiba Corp 逆通電型の絶縁ゲート型バイポーラトランジスタ
KR101248658B1 (ko) * 2011-04-12 2013-03-28 주식회사 케이이씨 절연형 게이트 바이폴라 트랜지스터
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JP6468984B2 (ja) * 2015-10-22 2019-02-13 三菱電機株式会社 半導体装置
DE102015120210B4 (de) 2015-11-23 2019-02-21 Infineon Technologies Ag Leistungshalbleitertransistor mit vergrößerter bipolarer Verstärkung
CN105870179B (zh) * 2016-04-26 2019-01-01 电子科技大学 一种沟槽栅电荷存储型rc-igbt及其制造方法

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Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE10245050B4 (de) * 2002-09-26 2005-09-22 Infineon Technologies Ag IGBT mit integriertem Freilaufelement und Halbleiterschaltungsanordnung
DE10314604B4 (de) * 2003-03-31 2006-07-27 Infineon Technologies Ag IGBT-Anordnung mit Reverse-Diodenfunktion
US9018674B2 (en) 2012-04-06 2015-04-28 Infineon Technologies Ag Reverse conducting insulated gate bipolar transistor
CN103346085A (zh) * 2013-07-02 2013-10-09 江苏博普电子科技有限责任公司 一种提高双极型晶体管BVcbo的生产工艺
CN110739305A (zh) * 2018-07-19 2020-01-31 株式会社村田制作所 半导体装置
CN110739305B (zh) * 2018-07-19 2023-10-03 株式会社村田制作所 半导体装置
WO2020240728A1 (ja) * 2019-05-29 2020-12-03 三菱電機株式会社 半導体装置、および、半導体装置の製造方法
JPWO2020240728A1 (ja) * 2019-05-29 2021-10-21 三菱電機株式会社 半導体装置、および、半導体装置の製造方法
JP7123258B2 (ja) 2019-05-29 2022-08-22 三菱電機株式会社 半導体装置、および、半導体装置の製造方法

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EP1271653B1 (en) 2009-07-29
US6734497B2 (en) 2004-05-11
KR100485556B1 (ko) 2005-04-27
US20030042575A1 (en) 2003-03-06
DE60139386D1 (de) 2009-09-10
JPWO2002063695A1 (ja) 2004-06-10
JP4657578B2 (ja) 2011-03-23
KR20020087104A (ko) 2002-11-21
EP1271653A1 (en) 2003-01-02

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