Classifications

• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
  • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
  • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
  • H01L21/67005—Apparatus not specifically provided for elsewhere
  • H01L21/67011—Apparatus for manufacture or treatment
  • H01L21/67098—Apparatus for thermal treatment
  • H01L21/67109—Apparatus for thermal treatment mainly by convection
• • C—CHEMISTRY; METALLURGY
  • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
  • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
  • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
  • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
  • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
  • C23C16/45563—Gas nozzles
  • C23C16/4557—Heated nozzles
• • C—CHEMISTRY; METALLURGY
  • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
  • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
  • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
  • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
  • C23C16/46—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for heating the substrate
• • C—CHEMISTRY; METALLURGY
  • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
  • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
  • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
  • C23C16/56—After-treatment
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
  • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
  • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
  • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
  • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
  • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
  • H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
  • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
  • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
  • H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
  • H01L21/67739—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber

Definitions

• the present invention relates to a heat treatment method and a heat treatment apparatus, and more particularly to a heat treatment method and a heat treatment apparatus used for semiconductor manufacturing. Kyoto technology
• Liquid crystal panels are used as displays for computers and televisions. Glass substrates for liquid crystal displays (hereinafter referred to as LCD substrates) have become increasingly large in recent years.
• Various semiconductor manufacturing processes are performed when devices such as thin film transistors are mounted on the LCD substrate.
• the heat treatment step is performed by, for example, a single-wafer type cold wall type heat treatment apparatus that processes substrates one by one. This equipment heats the substrate loaded into the chamber from above with a heating lamp.
• a heater provided around the reaction vessel also heats the reaction vessel wall itself to heat the substrate. It is preferable to use a wall-type heat treatment device.
• a carrier room for loading and unloading substrate carriers is connected air-tight to the transfer room where the transfer arm is installed, and a plurality of heat treatment chambers are further sealed in this transfer room.
• a system called a cluster tool that is configured by connecting to a computer is used.
• Hot wall heat treatment equipment requires a long time to ripen and cool the substrate.
• a heating medium gas is supplied to an extremely small gap between the back side of the substrate and the mounting table.
• heat can be rapidly exchanged between the substrate and the mounting table.
• a static mist chuck cannot be used, a large gap exists between the substrate and the mounting stall. This Therefore, if a cold wall method is used, it is difficult to cool the substrate uniformly and rapidly, especially for a large LCD substrate. Therefore, when incorporating a hot wall type heat treatment apparatus for heat treatment of LCD substrates into a cluster tool, it takes a long time to heat and cool the substrate in the heat treatment apparatus. There is a problem that functions cannot be fully utilized. Disclosure of the invention
• a general object of the present invention is to provide an improved and useful heat treatment method and a heat treatment apparatus that solve the above-mentioned problems.
• a more specific object of the present invention is to provide a heat treatment apparatus and method capable of achieving high throughput when heat treating a glass substrate.
• a carrier chamber in which a substrate carrier is loaded and unloaded, a transport chamber for transporting the substrate, and a hot-wall type thermal processing unit for heat-treating the substrate.
• a heat treatment apparatus having an airtight connection between the reaction vessel and the reaction vessel is used.
• the glass substrate for the liquid crystal display is taken out of the substrate carrier in the carrier chamber by the conveyance means in the conveyance chamber, and is conveyed into the heat treatment unit where the heat treatment is performed.
• a method comprising: transferring a glass substrate from the transfer chamber into a reaction vessel in the heat treatment unit; heating the reaction vessel to a processing temperature to perform a heat treatment on the glass substrate; In at least one of the step of raising the temperature of the inside of the reaction vessel to the processing temperature and the step of lowering the temperature of the reaction vessel after the heat treatment, heat is applied to the surface of the glass substrate.
• a heat treatment method comprising: supplying a replacement gas to perform heat exchange between the glass substrate and the gas; and carrying out the heat-treated glass substrate from the reaction vessel. .
• the gas for heat exchange is blown from the gas supply unit facing the surface of the glass substrate over substantially the entire surface of the glass substrate.
• the heat exchange gas it is preferable that the temperature be adjusted to a predetermined temperature before being supplied into the reaction vessel.
• the first heat exchange gas is supplied to the glass substrate during the process of raising the temperature of the inside of the reaction vessel to the processing temperature, and after the heat treatment, the reaction vessel is cooled.
• a second heat exchange gas having a lower temperature than the first heat exchange gas is supplied to the glass substrate.
• the heat treatment method according to the present invention described above includes a step of dividing a glass substrate placed in the reaction vessel into a plurality of regions and supplying a heat exchange gas independently for each of the divided regions. Detecting a temperature of each of the divided regions of the glass substrate; and, based on a temperature detection result of each of the divided regions, at least one of a flow rate and a temperature of a heat exchange gas supplied to each of the divided regions. Controlling the process, and Thereby, the glass substrate can be heated and cooled with higher in-plane uniformity.
• a carrier chamber in which a substrate carrier is loaded and unloaded, a transfer chamber for transferring a substrate, and a reaction vessel of a hot water type heat treatment unit for heat-treating the substrate are airtightly connected.
• Heat treatment apparatus and a control unit for controlling the flow path switching unit to supply the heat exchange gas to the glass substrate is provided.
• FIG. 1 is a schematic plan view showing the entire heat treatment apparatus according to the first embodiment of the present invention.
• FIG. 2 is a sectional view of a hot wall type heat treatment unit used in the heat treatment apparatus shown in FIG.
• FIG. 3 is a flowchart of a process performed by the heat treatment apparatus shown in FIG.
• FIG. 4 is a configuration diagram showing a part of the heat treatment apparatus according to the second embodiment of the present invention.
• FIG. 5 is a perspective view showing a gas supply unit and an LCD substrate used in the heat treatment apparatus shown in FIG.
• FIG. 6 is a configuration diagram showing a part of a heat treatment apparatus according to a third embodiment of the present invention. '' Best mode for carrying out the invention
• FIG. 1 is a plan view showing a schematic configuration of a heat treatment apparatus according to a first embodiment of the present invention.
• the heat treatment apparatus shown in FIG. 1 includes a carrier chamber 1, a transfer chamber 2, and a plurality of (two in the figure) hot fornole type heat treatment units 3.
• the carrier chamber 1 and the transfer chamber 2 are airtightly connected via a gate valve G1. Further, the transfer chamber 1 and the heat treatment cut 3 are respectively connected via gate valves G2.
• the carrier chamber 1 is used to carry in / out the carrier C, which is a carrier for holding and transporting a plurality of rectangular LCD substrates 10 in a shelf shape, to / from the outside of the apparatus via a gate door G3. It is an airtight room.
• the transfer chamber 2 is provided with a transfer means 21 comprising an articulated arm.
• the transport means 21 is provided so that the LCD substrate 1Q can be transferred to and from the carrier C in the carrier. It is configured so that the LCD substrate 10 can be delivered.
• the carrier chamber (1) and the transfer chamber (2) have a gas supply and exhaust system (not shown), and the inside thereof is an inert gas atmosphere.
• the heat treatment unit 3 has a cylindrical quartz reaction vessel 4 with an open bottom, and is provided so as to surround the reaction vessel 4 and has an open bottom to form a heat treatment atmosphere.
• the transfer chamber 33 enclosed by the housing 30 and the LCD substrate 10 are held at four points, for example, at a position near the outer edge, and are moved up and down between the reaction vessel 4 and the transfer chamber 33.
• the storage unit 41 is provided.
• the mounting section 4 is provided via a support port 43 on a cap 42 that opens and closes the lower end opening of the reaction vessel 4.
• the cap 42 is provided above the elevating shaft 44, and is moved up and down by an elevating mechanism 45 below the transfer chamber 33.
• a transfer outlet 33 a is formed on the side wall of the transfer chamber 33 so that the arm of the transfer means 21 shown in FIG. 1 can transfer the LCD substrate 10 to and from the mounting part 41.
• the transfer chambers 3 'and 3 have a gas supply and exhaust system (not shown), and can form an inert gas atmosphere.
• a slide and a vertically movable cap are provided so that the lower end opening of the reaction vessel 4 is closed when the receiver 41 is located in the transfer chamber 33. It is provided at the top of 3 3.
• a gas supply unit 5 is provided on the upper side of the reaction vessel 1, and an exhaust pipe 4'6 is connected to a lower side thereof.
• the exhaust pipe 46 will be described.
• the exhaust pipe 46 is configured so as to be able to perform exhaust by switching between a vacuum exhaust means (not shown) and an exhaust pump. Therefore, it is possible to create both a vacuum atmosphere and a normal pressure atmosphere while exhausting the inside of the reaction vessel 4.
• the gas supply unit 5 has a large number of gas blowing holes 51 on the lower surface of a flat cylindrical portion continuous with the reaction vessel 1 so that a region facing the entire surface of the LCD substrate 10 is a gas blowing region. .
• a gas supply pipe 52 serving as a gas supply path is connected to the upper surface side of the gas supply unit 5.
• the gas supply pipe 52 penetrates through the heat insulator 31 to provide a gas supply pipe 53 for supplying a processing gas and a gas supply pipe 54 for supplying a gas for heat exchange: ⁇ It is forked. .
• the gas supply pipe 53 is connected to a processing gas supply source (not shown) via a valve VC which is a flow path opening / closing section.
• the gas supply pipe 54 is provided with a first gas supply pipe 55 for supplying a first heat exchange gas (gas for heating) when the LCD substrate 10 is heated, and when the LCD substrate 10 is cooled. It is branched into a second gas supply pipe 56 and a second gas supply pipe 56 for supplying a second heat exchange gas (cooling gas).
• the first gas supply pipe 55 has a gas supply source 61 as a first heat exchange gas, for example, a helium gas as an inert gas.
• a supply source a temperature control section 62 including a heating section for adjusting this gas to a first temperature, a gas flow rate adjustment section 63 composed of, for example, a mass flow meter, and a valve 64 4 serving as a flow path opening / closing section are provided in this order from the upstream side.
• a second gas supply pipe 56 is provided with a gas supply source 71, which is a second gas for hot aging exchange, for example, a pedestal source of helium gas, which is an inert gas, and A temperature control unit 72 for adjusting the temperature to a second temperature lower than the temperature, a gas flow rate adjustment unit 73 composed of, for example, a mass flow meter, and a valve 74 serving as a flow passage opening / closing unit, and a force upstream. They are provided in this order from the side.
• a gas supply source 71 which is a second gas for hot aging exchange, for example, a pedestal source of helium gas, which is an inert gas
• a temperature control unit 72 for adjusting the temperature to a second temperature lower than the temperature
• a gas flow rate adjustment unit 73 composed of, for example, a mass flow meter
• a valve 74 serving as a flow passage opening / closing unit
• the first temperature which is the adjustment temperature of the first heat exchange gas
• the second temperature which is the adjusted temperature of the gas for the second heat exchange, may be approximately room temperature, or may be a temperature between the room temperature and the process temperature.
• the temperature control section 72 includes a heating section, but when the second temperature is lower than room temperature, the temperature control section 72 includes a cooling section.
• the temperature control section 72 need not be provided.
• the gas supply pipe 55 for the first heat exchange gas and the gas supply pipe 56 for the second heat exchange gas are divided. 6 can be shared and the control section can be shared as a single gas supply path. In that case, the temperature setting may be changed between when supplying the first heat exchange gas and when supplying the second heat exchange gas.
• the heat treatment apparatus includes a control unit 100 as shown in FIG.
• the control unit 100 outputs a control signal for the valves 50, 64, and 74 to control the supply of the salt-treating gas and the heat-exchange gas into the reaction vessel 4 and stop thereof. Further, the control unit 100 outputs signals for controlling the temperature control units 62 and 72 and the flow rate control units 63 and 73 to control the temperature control of the first and second heat exchange gases. It has a series of sequence programs for controlling the flow rate. Next, the processing in the above embodiment will be described with reference to the flowchart in FIG. First, the carrier C holding a plurality of LCD substrates 10 from the outside is carried into the carrier chamber 1 where, for example, an inert gas is always supplied and an inert gas atmosphere is provided.
• Step SI After closing the gate door G3, the gate pulp G2 is opened, and the LCD substrate 10 is transferred to the receiver 41 in the transfer chamber 33 of the heat treatment unit 3, and is loaded into the reaction vessel 4 by the lifting mechanism 45 ( Step S 2).
• the transfer chamber 2 and the transfer chamber 33 are also in an inert gas atmosphere, so that the LCD substrate is transferred in an inert gas atmosphere.
• the heater 32 is turned off, for example, but the temperature is higher than the room temperature because the heat from the heat treatment of the LCD substrate 10 before that remains. . .
• the first heat exchange gas for example, helium gas
• the first heat exchange gas for example, helium gas
• the heater 32 is turned on to increase the power and heat the inside of the reaction vessel 4.
• the temperature of the LCD substrate 10 rapidly rises due to radiant heat from the heater 32 and heat conduction from the hot helium gas.
• the helium gas is also heated toward the process temperature.
• the temperature of the LCD substrate 10 is evenly increased to the process temperature by heat exchange with the Helium gas (Step S3).
• the inside of the reaction vessel 4 is in a normal pressure state, for example, and is exhausted by an exhaust pump (not shown) through an exhaust pipe 46.
• the valve 64 is closed, and the inside of the reaction vessel 4 is evacuated to a predetermined degree of vacuum by a vacuum evacuation means (not shown) connected to the exhaust pipe 46.
• a vacuum evacuation means (not shown) connected to the exhaust pipe 46.
• the valve 64 is closed and the valve 50 is opened to supply a processing gas for heat treatment, for example, CVDD, into the reaction vessel 4 to form a thin film on the LCD substrate 10 (Step S4).
• the vacuum exhaust may be performed before the LCD substrate 10 reaches the process temperature.
• an annealing process is performed.
• the temperature control unit 62 adjusts the temperature of the gas, for example, to a temperature higher than the CVD process temperature. May be supplied into the reaction vessel 4 to exchange heat with the LCD substrate 10.
• a reaction gas for annealing is reacted under reduced pressure in the viscous flow region. This is performed while supplying the solution into the container 4 (step S5).
• the heater 32 is turned off, the valve 50 is closed, and the valve 74 is opened to supply helium gas, which is the second heat exchange gas, from the gas supply unit 5 into the reaction vessel 4. Supply.
• This Helium gas is adjusted by the temperature control unit 72 to a temperature that does not affect the LCD substrate 10 even when the LCD substrate 10 is transported to the carrier C (allowable carry-in temperature). Sprayed throughout.
• the heat of the LCD substrate 10 is taken away by the helium gas and rapidly and uniformly cooled (step S6).
• the inside of the reaction vessel 4 is in a normal pressure state, for example, and exhausted by an exhaust pump (not shown) through the exhaust pipe 46.
• the allowable carry-in temperature is, for example, a temperature lower than 200 degrees.
• the lowering part 41 is lowered to the transfer chamber 33, and the LCD substrate 10 on the mounting part 41 is returned to the original carrier C in the carrier chamber 1 by the transport means 21 (see FIG. 1). It is transported (step S7).
• the mounting part 41 is lowered, the lower end opening of the reaction vessel 4 is closed by the cap (not shown).
• the gate door G3 is opened and the carrier C is carried out (step S8). .
• a heated heat exchange gas is supplied to the entire surface of the LCD substrate 10. Since the temperature of the LCD substrate 10 is raised by utilizing heat exchange with gas, the LCD substrate 10 can be uniformly and rapidly heated over the entire surface. Further, after the heat treatment, a low-temperature gas for heat exchange is supplied over the entire surface of the LCD substrate 10, and the LCD substrate 10 is cooled by utilizing heat exchange with the gas. The LCD substrate 10 can be uniformly and rapidly cooled over the entire surface to the above-described carrier carrying allowable temperature, and can be quickly returned to the carrier C.
• the temperature of the LCD substrate 10 can be raised and lowered uniformly and rapidly. Also heat Stress can be suppressed, cracking of the glass substrate and device damage can be prevented, and high throughput can be obtained.
• CVD and annealing are performed in the same heat treatment unit 3, but these heat treatments may be performed in separate heat treatment units 3.
• the continuous treatment include a treatment in which an oxidation treatment is performed to oxidize the silicon film, and then a treatment in which the oxidation treatment is performed in a nitrogen gas atmosphere to nitride the surface.
• the present invention can be applied to a case where heat treatment such as CVD, acid treatment or diffusion treatment is performed without performing continuous treatment.
• the LCD substrate 1 on the mounting portion 41 is divided into two, for example, a square central region S1 and an outer region S2 surrounding the central region S1.
• the configuration is such that the first or second heat exchange gas can be supplied onto the LCD substrate 10 independently for each of the divided regions (the central region S1 and the outer region S2).
• the gas supply unit 5 is partitioned into a rectangular central compartment 81 and an outer compartment 82 outside the rectangular compartment 81 so as to correspond to the central area S1.
• a gas supply pipe 55 for the first heat exchange gas and a gas supply pipe 56 for the second heat exchange gas are respectively supplied to the central compartment 81 and a gas supply system to the outer compartment 82.
• the system is divided into two systems:
• the gas supply pipes denoted by reference numerals 55-1 and 55-2 in FIG. 4 supply the first gas for heat exchange when the LCD substrate 10 is heated, and the gas supply pipes 91 and 92 are respectively provided.
• the central compartment 81 and the outer compartment 82 are connected to each other through the center.
• Gas supply pipes denoted by reference numerals 56-1 and 56-2 are provided at central sections through gas supply pipes 91 and 92, respectively, so as to supply a second heat exchange gas when the LCD substrate 10 is cooled. It is connected to the room 81 and the outer compartment 82.
• 63-1, 63-2, 73-1, 73-2 are flow regulating sections, and 64-1, 64-2, 74-1, 74-2 are valves.
• the mounting section 41 includes a temperature detecting section 111 for detecting the temperature of the central area S1 of the LCD 10 and temperature detecting sections 1 12 and 1 13 for detecting the temperature of the outer area S 2 of the LCD substrate 10. Is provided. As these temperature detecting units, for example, thermocouples are used. Then, the control unit 100 controls the temperature by the temperature detection units 111 to 113. For example, the flow rate of the first or second heat exchange gas is adjusted so that the uniformity of the temperature in the plane of the LCD substrate 10 is increased in accordance with the detection result. Send a control signal to the flow rate adjustment unit (64-1, 64-2, 74-1, 4-2).
• the detected temperature value for example, if there are a plurality of temperature detecting units for detecting the temperatures of the respective regions S 1 and S 2 (in the example of FIG. 4, one and two are provided for convenience) -The average value of the detected temperature values is used as the detection result. Then, as a control method, for example, if it is determined that the temperature of the central region S1 is higher than the temperature of the outer region S2 at the time of heating of the LCD substrate 1, 0; By controlling the flow rate adjusting units 63-1-1 and 63-2 so that the flow rate of the gas in the outer compartment 82 becomes large, the amount of heat given from the first heat exchange gas to the outside area S2 is increased. Make the temperature uniform.
• the outer compartment 82 of the second heat exchange gas is determined.
• the flow rate adjusting units 73-1, 732-2 are controlled so as to increase the flow rate, and the amount of heat taken by the second heat exchange gas from the outer region S2 is increased to achieve a uniform temperature.
• the in-plane uniformity of the temperature during heating and cooling of the LCD substrate 10 can be further increased.
• the number of divisions of the area of the LCD substrate 10 is not limited to two, but may be three or more. Also, instead of being divided into the central region or the outer region, it may be divided right and left. Further, as a control method, instead of adjusting the flow rate in accordance with the temperature detection result, two temperature control units 62 may be prepared to adjust the temperature of the gas, and the flow rate and the flow rate may be adjusted. Both temperatures may be adjusted. When adjusting the temperature, for example, when the LCD substrate 10 is cooled, the temperature of the outer region S2 is lower than that of the central region S1, and in this case, the temperature of the gas supplied to the outer region S2 is reduced. Control is performed so as to be higher than the temperature of the gas supplied to the central region S1.
• FIG. 6 is a diagram showing a third embodiment of the present invention.
• the first heat exchange gas gas supply pipe 55 and the second heat exchange gas gas supply pipe 56 each have an amount of heat exchange required for one heat exchange.
• Store gas for use.
• tanks 60, 70 and valves 65, 66, 75, 76 in which temperature control sections are incorporated are provided. .
• the capacity of the tanks 60 and 70, their internal pressures, and the supply flow rates of the first and second heat exchange gases are shown in FIG. It is set in consideration of the capacity and the pressure in the reaction vessel 4 at the start of heat exchange (at the start of heating and cooling).
• the valves 64, 66 (74, 76) are opened, After the end of the heat exchange, store the gas in tank 60 (70) before the next heat exchange.
• the gas can be stored in the tank in advance, and the temperature can be adjusted. Therefore, the temperature can be easily and reliably adjusted by performing experiments in advance and acquiring data.
• the temperature when heat-treating a glass substrate, the temperature can be rapidly changed (heated and / or cooled) with high uniformity over the entire surface, and high throughput can be obtained.

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• 2001
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