CN1253928C - 热处理方法和热处理装置 - Google Patents

热处理方法和热处理装置 Download PDF

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Publication number
CN1253928C
CN1253928C CNB028040708A CN02804070A CN1253928C CN 1253928 C CN1253928 C CN 1253928C CN B028040708 A CNB028040708 A CN B028040708A CN 02804070 A CN02804070 A CN 02804070A CN 1253928 C CN1253928 C CN 1253928C
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CN
China
Prior art keywords
temperature
heat exchange
gas
glass substrate
heat
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Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
CNB028040708A
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English (en)
Chinese (zh)
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CN1488165A (zh
Inventor
松冈孝明
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Tokyo Electron Ltd
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Tokyo Electron Ltd
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Publication date
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Publication of CN1488165A publication Critical patent/CN1488165A/zh
Application granted granted Critical
Publication of CN1253928C publication Critical patent/CN1253928C/zh
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67109—Apparatus for thermal treatment mainly by convection
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45563—Gas nozzles
    • C23C16/4557—Heated nozzles
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/46—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for heating the substrate
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/56—After-treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
    • H01L21/67739—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Liquid Crystal (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Chemical Vapour Deposition (AREA)
  • Furnace Details (AREA)
  • Re-Forming, After-Treatment, Cutting And Transporting Of Glass Products (AREA)
CNB028040708A 2001-01-25 2002-01-24 热处理方法和热处理装置 Expired - Fee Related CN1253928C (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP016471/2001 2001-01-25
JP2001016471A JP5034138B2 (ja) 2001-01-25 2001-01-25 熱処理方法及び熱処理装置
JP016471/01 2001-01-25

Publications (2)

Publication Number Publication Date
CN1488165A CN1488165A (zh) 2004-04-07
CN1253928C true CN1253928C (zh) 2006-04-26

Family

ID=18882839

Family Applications (1)

Application Number Title Priority Date Filing Date
CNB028040708A Expired - Fee Related CN1253928C (zh) 2001-01-25 2002-01-24 热处理方法和热处理装置

Country Status (5)

Country Link
US (2) US6951815B2 (enExample)
JP (1) JP5034138B2 (enExample)
KR (1) KR100510610B1 (enExample)
CN (1) CN1253928C (enExample)
WO (1) WO2002059955A1 (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101839644A (zh) * 2009-03-18 2010-09-22 光洋热系统株式会社 基板处理系统和基板处理方法

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JP3278423B2 (ja) 2000-01-21 2002-04-30 吉田工業株式会社 撚線装置
KR101015597B1 (ko) * 2004-05-12 2011-02-17 주식회사 비아트론 반도체 소자의 열처리 장치
US7592569B2 (en) * 2004-10-21 2009-09-22 Tokyo Electron Limited Substrate processing apparatus, pressure control method for substrate processing apparatus and recording medium having program recorded therein
KR100646982B1 (ko) * 2004-12-30 2006-11-23 엘지.필립스 엘시디 주식회사 액정 표시 장치의 배향막 형성 방법
US8674405B1 (en) * 2005-04-13 2014-03-18 Element Six Technologies Us Corporation Gallium—nitride-on-diamond wafers and devices, and methods of manufacture
ITMI20050962A1 (it) * 2005-05-25 2006-11-26 Lpe Spa Dispositivo per introurre gas di reazione in una camera di reazione e reattore epitassiale che lo utilizza
JP2007051317A (ja) * 2005-08-16 2007-03-01 Ngk Insulators Ltd 加熱装置
US20070227659A1 (en) * 2006-03-31 2007-10-04 Tokyo Electron Limited Plasma etching apparatus
US8042359B2 (en) * 2006-05-18 2011-10-25 Corning Incorporated Methods and apparatus for heat treating glass sheets
US7479466B2 (en) * 2006-07-14 2009-01-20 Taiwan Semiconductor Manufacturing Co., Ltd. Method of heating semiconductor wafer to improve wafer flatness
WO2008037065A1 (en) * 2006-09-26 2008-04-03 Chang Qing Xu Method and apparatus of forming domain inversion structures in a nonlinear ferroelectric substrate
JP5063995B2 (ja) * 2006-11-22 2012-10-31 大日本スクリーン製造株式会社 熱処理装置
JP4594400B2 (ja) * 2008-01-17 2010-12-08 エスペック株式会社 板状体冷却装置、並びに、熱処理システム
CN101748385B (zh) * 2008-12-22 2012-05-09 深超光电（深圳）有限公司 用于化学气相沉积(cvd)的基板处理设备
JP2010181054A (ja) * 2009-02-03 2010-08-19 Sharp Corp 加熱装置および加熱方法
CN102222598B (zh) * 2010-04-19 2015-04-08 圆益Ips股份有限公司 衬底处理装置
CN104078400B (zh) * 2014-06-25 2017-07-04 合肥鑫晟光电科技有限公司 承载装置以及离子注入设备
JP6573559B2 (ja) * 2016-03-03 2019-09-11 東京エレクトロン株式会社 気化原料供給装置及びこれを用いた基板処理装置
JP6242933B2 (ja) 2016-03-31 2017-12-06 株式会社日立国際電気 基板処理装置、半導体装置の製造方法およびプログラム
JP6810729B2 (ja) * 2018-11-27 2021-01-06 中外炉工業株式会社 熱処理炉
KR102714917B1 (ko) * 2020-03-16 2024-10-11 세메스 주식회사 기판 처리 장치 및 기판 처리 방법
CN114068325A (zh) * 2020-08-03 2022-02-18 东莞新科技术研究开发有限公司 一种半导体冷却处理方法
JP7114763B1 (ja) * 2021-02-15 2022-08-08 株式会社Kokusai Electric 半導体装置の製造方法、基板処理装置、プログラム、および基板処理方法
US11976369B2 (en) * 2021-07-06 2024-05-07 Destination 2D Inc. Low-temperature/BEOL-compatible highly scalable graphene synthesis tool
CN116466771A (zh) * 2023-04-06 2023-07-21 河北光兴半导体技术有限公司 用于玻璃基板的流动气体加热控制装置及方法
CN116772110A (zh) * 2023-06-19 2023-09-19 拓荆科技(上海)有限公司 液态源气相传输系统和方法

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JP2570201B2 (ja) * 1994-10-28 1997-01-08 日本電気株式会社 熱処理炉
KR100244041B1 (ko) * 1995-08-05 2000-02-01 엔도 마코토 기판처리장치
JPH0955385A (ja) * 1995-08-11 1997-02-25 Daido Hoxan Inc 半導体熱処理方法およびそれに用いる装置
JPH09115904A (ja) * 1995-10-14 1997-05-02 Semiconductor Energy Lab Co Ltd 酸化膜の作製方法及び酸化膜の作製装置
JP3534518B2 (ja) * 1996-01-16 2004-06-07 エア・ウォーター株式会社 半導体熱処理方法およびそれに用いる装置
JPH09306838A (ja) * 1996-05-20 1997-11-28 Sony Corp 多結晶シリコン膜の固相成長方法
JP3070660B2 (ja) * 1996-06-03 2000-07-31 日本電気株式会社 気体不純物の捕獲方法及び半導体製造装置
JPH1022266A (ja) * 1996-07-02 1998-01-23 Sony Corp 半導体製造装置
US5895550A (en) * 1996-12-16 1999-04-20 Micron Technology, Inc. Ultrasonic processing of chemical mechanical polishing slurries
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JPH1154496A (ja) 1997-08-07 1999-02-26 Tokyo Electron Ltd 熱処理装置及びガス処理装置
JP2000133606A (ja) * 1998-10-22 2000-05-12 Ftl:Kk 半導体装置の製造方法
US6462310B1 (en) * 1998-08-12 2002-10-08 Asml Us, Inc Hot wall rapid thermal processor
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JP2000286267A (ja) * 1999-03-31 2000-10-13 Tokyo Electron Ltd 熱処理方法
JP2000323487A (ja) * 1999-05-14 2000-11-24 Tokyo Electron Ltd 枚葉式熱処理装置
JP2001133606A (ja) 1999-08-25 2001-05-18 Sumitomo Chem Co Ltd 光拡散粘着層及びそれを用いた液晶表示装置

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101839644A (zh) * 2009-03-18 2010-09-22 光洋热系统株式会社 基板处理系统和基板处理方法
CN101839644B (zh) * 2009-03-18 2013-07-31 光洋热系统株式会社 基板处理系统和基板处理方法

Also Published As

Publication number Publication date
KR100510610B1 (ko) 2005-08-30
US7313931B2 (en) 2008-01-01
JP5034138B2 (ja) 2012-09-26
US20050279138A1 (en) 2005-12-22
JP2002222804A (ja) 2002-08-09
US20040048493A1 (en) 2004-03-11
KR20030074732A (ko) 2003-09-19
US6951815B2 (en) 2005-10-04
CN1488165A (zh) 2004-04-07
WO2002059955A1 (fr) 2002-08-01

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Granted publication date: 20060426

Termination date: 20120124