WO2001095380A1 - Procede de preparation d'une couche de nitrure de gallium - Google Patents
Procede de preparation d'une couche de nitrure de gallium Download PDFInfo
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- WO2001095380A1 WO2001095380A1 PCT/FR2001/001777 FR0101777W WO0195380A1 WO 2001095380 A1 WO2001095380 A1 WO 2001095380A1 FR 0101777 W FR0101777 W FR 0101777W WO 0195380 A1 WO0195380 A1 WO 0195380A1
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- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
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- C30B25/02—Epitaxial-layer growth
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- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
- C30B29/403—AIII-nitrides
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- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
- C30B29/403—AIII-nitrides
- C30B29/406—Gallium nitride
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- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02436—Intermediate layers between substrates and deposited layers
- H01L21/02439—Materials
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- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02436—Intermediate layers between substrates and deposited layers
- H01L21/02494—Structure
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- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
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- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
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- H01L21/02631—Physical deposition at reduced pressure, e.g. MBE, sputtering, evaporation
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/12—All metal or with adjacent metals
- Y10T428/12493—Composite; i.e., plural, adjacent, spatially distinct metal components [e.g., layers, joint, etc.]
- Y10T428/12528—Semiconductor component
Definitions
- the invention relates to layers, in particular thick, monocrystalline layers of gallium nitride or mixed gallium nitride and another metal, as well as their preparation process.
- the invention further relates to electronic or optoelectronic devices comprising such layers.
- the technical field of the invention can be generally defined as that of the preparation of layers of nitride-based semiconductor materials on a substrate.
- nitride-based semiconductor materials of elements from groups III to V of the periodic table occupy and will occupy an increasingly important place in the fields of electronics and optoelectronics.
- the field of application of these nitride-based semiconductor materials covers, in fact, a broad spectrum which extends from laser diodes to ultraviolet photodetectors capable of operating at high frequency and high temperature. , the devices to surface acoustic waves and light emitting diodes (LEDs).
- the most commonly used substrate for the growth of nitrides is sapphire and, to a lesser extent, silicon carbide SiC. These two materials and in particular sapphire have a certain number of drawbacks.
- silicon is a good thermal conductor, and it can be easily eliminated by chemical means. Furthermore, because there is already a technological sector on silicon perfectly mastered on an industrial scale, and that its cost is very much lower than that of sapphire and SiC, silicon is the substrate of choice for mass production at low cost.
- nitrides such as gallium nitride
- silicon substrates faces problems due to the large differences between the mesh parameters and the coefficient of thermal expansion of the substrate and nitride.
- nitride such as GaN
- Buffer layer This layer continuously covers the substrate and allows the GaN layer to grow two-dimensionally.
- the nitride layers such as the GaN layers epitaxially grown on a silicon substrate, are either thin and without cracks, or thick, but cracked.
- the growth of the buffer layer of AlN transits more rapidly to a two-dimensional growth mode.
- the layers thus prepared still have a slight extensive residual stress, and beyond about 2 ⁇ m, the layers crack.
- the object of the present invention is to meet, inter alia, all of the needs mentioned above and to provide a layer and a preparation process which do not have the drawbacks, defects, limitations and disadvantages of the layers and prior art.
- the object of the present invention is to provide monocrystalline layers of gallium nitride and its alloys, which are free from cracks.
- extensive in the layer said substrate being covered with a buffer layer; in which at least one monocrystalline layer of a material whose thickness is 100 to 300 nm, preferably 200 to 250 nm, and whose lattice parameter is less than the lattice parameter of gallium nitride or mixed nitride of gallium and another metal, is interposed in the layer of gallium nitride or mixed nitride of gallium and another metal.
- the lattice parameter of the material of the intermediate monocrystalline layer is less than the lattice parameter of gallium nitride or of mixed gallium nitride and another metal.
- the mesh parameter of the monocrystalline interlayer layer must be lower than that of the nitride layer.
- the layer according to the invention can have any thickness, for example it can have a thickness of 1 ⁇ m, or even less.
- the layer according to the invention can in particular be a thick layer; thick layer according to the invention generally means a layer with a thickness greater than or equal to 2 ⁇ m, for example from 2 to 5 ⁇ m, preferably more than 2 to 5 ⁇ m, more preferably still from 3 to 5 .mu.m.
- the layers of the invention differ fundamentally from the layers of the prior art in that they have at least one interlayer monocrystalline layer having a lattice parameter lower than the lattice parameter of gallium nitride or of mixed gallium nitride and of another metal, in that precisely this layer is specifically, basically a monocrystalline layer and not a polycrystalline layer or even an amorphous layer, and finally in that the intermediate layer has a specific thickness of 100 to 300 nm.
- we aim to play on the constraint so we use layers “thick” spacers, whereas in the prior art where it is intended to play on the defects, thin layers of a few tens of nanometers are used.
- the layer according to the invention not only comprises an intermediate interlayer, having a lattice parameter lower than that of GaN, but also, furthermore, that this intermediate interlayer is a specific monocrystalline layer and finally that this layer has a specific thickness.
- This layer is generally produced under precise and defined conditions, in particular at a high temperature, namely generally at a temperature of 800 to 1000 ° C., preferably from 900 to 950 ° C.
- a monocrystalline interlayer for example of AlN
- a monocrystalline interlayer advantageously produced at high temperature, can make it possible to obtain thick, non-cracked GaN layers.
- the mesh parameter mismatch i.e., mesh parameter of the interlayer material less than the mesh parameter of gallium nitride or mixed gallium nitride and of another metal
- the mesh parameter mismatch is such that the upper nitride layer (s) are in compression during growth.
- This compression compensates for, or even cancels out, the extensive stress which occurs during cooling, and the layers of gallium nitride or of mixed nitride of gallium and of another metal can, at the same time, and in a completely surprising manner be, by example thick and without cracks, in other words, continuous, on a substrate capable of causing extensive stresses in the layer.
- the layers according to the invention comprise, in addition to the buffer layer, another intermediate layer, within the same material of gallium or mixed nitride of gallium and a another metal, which effectively eliminates cracks that the buffer layer alone does not prevent.
- the intermediate layer according to the invention makes it possible in particular to significantly increase the critical thickness of appearance of cracks compared to the use of the single buffer layer. This means that the intermediate layer makes it possible to impose a higher compressive stress which comes to compensate exactly, or in part, the extensive stress which is established during cooling.
- the layers according to the invention have a thickness free from cracks, which has never been achieved in the prior art, since, in the document cited above, the maximum thickness of the layers without cracks is only 2 ⁇ m, whereas it can reach 3 ⁇ m, or even more, that is to say up to 5 ⁇ m, depending on the 'invention.
- the invention is not limited to “thick” layers, but relates to all the layers having the structure according to the invention, for example the layers may have a thickness of 1 ⁇ m or less.
- the intermediate layer is a monocrystalline layer and not amorphous or polycrystalline.
- the mixed gallium nitrides are chosen from mixed gallium nitrides with aluminum or indium.
- the substrate may be any substrate used in this field of the technique, and which would be liable to cause extensive stresses in the layer, but it is preferably a substrate chosen from among the silicon and carbide substrates of silicon.
- the silicon substrate is preferably a silicon substrate oriented along the plane (111), preferably also the silicon is deoxidized.
- the buffer layer is preferably an AlN layer, preferably moreover this layer is a thin layer generally 10 to 50 nm thick.
- the interlayer may be made of the same material or different from that of the buffer layer. However, the interlayer is generally a layer of AlN or AlGaN. This layer is, according to the invention, a monocrystalline layer. The thickness of said interlayer is generally from 100 to 300 nm, preferably from 200 to 250 nm.
- the layer according to the invention can comprise from 1 to 5 intermediate layers.
- the invention also relates to a process for the preparation of a monocrystalline layer, without cracks, of gallium nitride or mixed gallium nitride and another metal on a substrate capable of causing extensive stresses in the layer, said process comprising the following successive steps: a) possible exposure of the surface of the heated substrate to ammonia; this treatment is carried out in the case where the substrate is made of silicon; b) deposition of an aluminum atomic monolayer; c) depositing a buffer layer; d) growth of a deposit of gallium nitride or of mixed gallium nitride and another metal; e) interruption of the growth of the deposit of gallium nitride or mixed gallium nitride and another metal; f) growth of an interlayer monocrystalline layer of a material whose lattice parameter is less than the lattice parameter of gallium nitride or of mixed gallium nitride and another metal, and
- stage f The fundamental stage of the process according to the invention, which essentially differentiates it from the processes of the prior art, is stage f).
- the fact of inserting at least one monocrystalline layer of a material having a mesh parameter mismatch (see above) with gallium nitride, i.e. a mesh parameter smaller than the gallium nitride or that the mixed gallium nitride in the layer of GaN or of mixed gallium nitride and another metal compensates for, or even cancels, the extensive stress occurring during cooling, for example, to room temperature
- this fact thanks to the process of the invention, it is possible to prepare layers, in particular thick layers, without cracks, continuous, on a substrate capable of causing, inducing, extensive stresses in the layer.
- step f) of growth of an intermediate layer which is specifically, fundamentally, monocrystalline makes it possible in particular to impose a higher compressive stress than that created in the method of the prior art, described in the document by NIKISHIN et al.
- the intermediate layer which is grown is a monocrystalline layer which, alone, makes it possible to obtain final layers, in particular thick and without cracking.
- the interlayer has a specific thickness of 100 to 300 nm, which allows to play on the stress.
- steps a), b), c) and d) of the method of the invention are similar to the method of the prior art, mentioned above, the comparison of the values of the residual stress and of the maximum thickness achievable without cracking, which is generally 3 ⁇ m or more, in the case of the present method, against 2 ⁇ m in the prior art, demonstrates that the additional step of the method of the invention plays an essential role , decisive, to increase the compressive stress and compensate further extension that occurs during cooling.
- the growth conditions of the interlayer according to the invention are important and must be chosen, precisely, so that this layer is monocrystalline.
- the temperature used during the growth of the intermediate layer is advantageously a high temperature, generally from 800 to 1000 ° C., preferably from 900 to 950 ° C.
- the other parameters or conditions of growth which must generally be chosen with precision are in particular the speed of growth and the thickness of intermediate layer to be made to grow.
- the process according to the invention is simple, reliable and reproducible, thus, by way of example, it has been shown that the reproducibility of the process was 100% for about twenty layers produced.
- the substrate as mentioned above, can be any substrate capable of causing extensive stresses in the layer. This is one of the advantages of the process of the invention that it does not depend a priori on the substrate and that it is of very general application.
- the essential step where it is a question of intercalating a monocrystalline layer, for example, of AlN in the layer of gallium nitride or mixed nitride of gallium and another metal is completely independent of the sub .strat.
- Preferred substrates have been indicated above.
- the method according to the invention can indifferently use any growth technique for the deposition of the buffer layer, the growth of deposits of gallium nitride or of mixed nitride of gallium and of another metal, and for the growth of the intermediate layer.
- the conditions for growth thereof must be such that it is monocrystalline.
- MJE molecular jet epitaxy
- MOCVD metalorganic Chemical Vapor Deposition
- HVPE Hydride Vapor Phase Epitaxy
- the preferred method is the EJM, generally under the following conditions, which make it possible to ensure the growth of a monocrystalline interlayer: temperature from 800 to 1000 ° C., preferably from 900 to 950 ° C., and growth rate. from 0.1 to 0.5 ⁇ m / h.
- steps d) to f) can be repeated, for example, from 1 to 5 times, then leading to the deposition of 2 to 6 intermediate monocrystalline layers.
- the method according to the invention is therefore very flexible, both from the point of view of the choice of substrate, and of the method for growing deposits and layers.
- this method can only be applied once to the interface between the substrate and the AlN buffer layer.
- the method according to the invention therefore has the advantage of being able to be applied, transposed as it is, when using, for example, silicon carbide substrates instead of silicon substrates, these SiC substrates, As seen, prove to be particularly well suited to the types of components which it is desired to produce with nitrides.
- the invention also relates to an electronic and / or optoelectronic device comprising at least one thick monocrystalline layer, without cracks of gallium nitride or mixed gallium nitride and another metal, according to the invention, such as described above.
- Such devices are, for example, laser diodes, transistors capable of operating at high frequency and high temperature, ultraviolet photodetectors, wave devices surface acoustics, light emitting diodes, etc.
- FIG. 1 is a graph which diagrammatically shows deposits and growths by MBE, the different stages of the process of the invention, giving the temperature T (° C), as a function of time t
- FIGS. 3A and 3B are photographs under an optical microscope of a GaN layer 2 ⁇ m thick comprising no interlayer (not in accordance with the invention), and of a GaN layer 2 ⁇ m thick thickness comprising an intermediate layer (according to the invention);
- FIGS. 4B and 4A are respectively photoluminescence and reflectivity spectra obtained with GaN of thickness 1 ⁇ m without interlayer (not in accordance with the invention) and a GaN layer of the same thickness comprising an interlayer (in accordance with the invention).
- On the ordinate are plotted arbitrary units (u.a) and on the abscissa is plotted the energy of photons E (eV).
- the substrates used are preferably "afers" (or wafers) of silicon oriented along the plane (111).
- the native oxide layer which covers the silicon substrate is evaporated in situ in the growth chamber by rapid thermal annealing, for example, up to 950 ° C: it this is the so-called “deoxidation” step (step 0), this step is not shown in FIG. 1.
- the process according to the invention is then started (at time 0, in FIG. 1).
- the temperature of the substrate is generally fixed at, for example, 600 ° C. and the surface of the silicon is exposed for a few seconds (namely generally from 2 to 10 seconds to ammonia (step 1).
- the temperature of the substrate is then generally increased to about 830 ° C. After bringing the temperature of the substrate generally to 600 ° C, an aluminum atomic monolayer is deposited
- the growth of the buffer layer is then initiated by increasing the temperature to 900 ° C. (step 3).
- the process described here is the EJM or "MBE” process (Epitaxial by Molecular Jets).
- the growth is stopped and the temperature generally drops to 780 ° C.
- the growth of GaN or mixed nitride of gallium and another metal is produced at this temperature on the buffer layer, for example, of AlN (step 4).
- the growth of GaN or of mixed gallium nitride and another metal is generally interrupted after deposit of a thickness of 100 to 300 nm (for example 250 nm in FIG. 1) and the temperature is generally brought to 900 ° C. to effect the growth of a monocrystalline interlayer of AlN, in the case where the buffer layer and the interlayer are both made of AlN.
- This monocrystalline interlayer generally has a thickness of 100 to 300 nm.
- step 6 the temperature is lowered again generally to 780 ° C., as previously, to restart the growth of GaN or of mixed nitride of gallium and another metal to the desired final thickness (step 6) which is generally 2 to 5 ⁇ m.
- FIG. 1 already mentioned, schematizes the different stages of the method according to the invention, and after deoxidation of the substrate, while FIG. 2 presents a schematic section of the structure of the layer according to the invention, thus produced: with a substrate ( 21), for example, in Si (111), a buffer layer, for example, in AIN (22) and a layer of GaN (23), in which an AlN layer (24) is inserted.
- a substrate for example, in Si (111)
- a buffer layer for example, in AIN (22)
- a layer of GaN (23) in which an AlN layer (24) is inserted.
- a 2 ⁇ m thick GaN layer in accordance with the invention, is prepared by molecular beam epitaxy (MJE) on a silicon substrate, that is to say with an interlayer monocrystalline layer. of 250 ⁇ m thick AlN.
- MJE molecular beam epitaxy
- the silicon substrate is heated under ultra-vacuum for around ten hours around 600 ° C. to degas it. Then, it is introduced into the growth chamber and it is quickly brought to a temperature of the order of 950 ° C., in order to remove the layer of silicon oxide which is on the surface. Then, the temperature is lowered to about 600 ° C to expose the silicon surface for 2 seconds to the flow of ammonia. Then the temperature is brought to 820 ° C and lowered again to around 600 ° C. At this temperature, an aluminum monolayer is deposited (equivalent to a deposit of 10 seconds), then the temperature is increased to 650 ° C. At this temperature, ammonia and aluminum are simultaneously sent to form the buffer layer of aluminum nitride (AIN).
- AIN aluminum nitride
- the temperature is gradually increased to reach a temperature of the order of 900 ° C. and this temperature is kept to increase the 50 nanometers of AlN in the buffer layer (i.e. around 20 minutes under our conditions of growth).
- the temperature is lowered to around 780 ° C. and the growth of gallium nitride (GaN) is started. We grow a layer of GaN of 250 nanometers (about 15 minutes under our growth conditions).
- the growth of the monocrystalline layer of intermediate AlN is started.
- the beginning of the growth is done at 780 ° C, but the temperature is quickly increased to 900 ° C (the temperature rise lasts 2 minutes).
- the thickness of the interlayer AlN layer is 250 nm (about 2 hours under our growth conditions).
- the temperature is lowered to around 780 ° C. and the growth of the GaN layer 2 micrometers thick is started, ie approximately 2 hours.
- Example 2 comparativative
- a GaN layer of the same thickness as that of Example 1 (2 ⁇ m) is prepared, by Molecular Jets Epitaxy (EJM) for comparison purposes, under the same conditions as those of Example 1, but omitting the AlN interlayer.
- EJM Molecular Jets Epitaxy
- the silicon substrate is heated under ultra-vacuum for around ten hours around 600 ° C. to degas it. Then, it is introduced into the growth chamber and it is quickly brought to a temperature of the order of 950 ° C., in order to remove the layer of silicon oxide, which is on the surface. Then, the temperature is lowered to about 600 ° C to expose the silicon surface for 2 seconds to the flow of ammonia.
- the temperature is brought to 820 ° C and lowered again to around 600 ° C. At this temperature, an aluminum monolayer is deposited (equivalent to a deposit of 10 seconds), then the temperature is increased to 650 ° C. At this temperature, ammonia and aluminum are simultaneously sent to form the buffer layer of aluminum nitride (AIN). During the first two minutes, the temperature is gradually increased to reach a temperature of the order of 900 ° C. and this temperature is kept to increase the 50 nanometers of AlN in the buffer layer (i.e. around 20 minutes under our conditions of growth). Once the buffer layer is finished, the temperature is lowered to around 780 ° C and the growth of the GaN layer with a thickness of 2 micrometers is started, ie approximately 2 hours.
- AIN aluminum nitride
- a layer of GaN one micrometer thick is prepared by molecular beam epitaxy, under the same conditions as in Example 1, 250 nm thick monocrystalline interlayer layer of AlN.
- the silicon substrate is heated under ultra-vacuum for around ten hours around 600 ° C. to degas it. Then, it is introduced into the growth chamber and it is quickly brought to a temperature of the order of 950 ° C., in order to remove the layer of silicon oxide, which is on the surface. Then, the temperature is lowered to about 600 ° C to expose the silicon surface for 2 seconds to the flow of ammonia. Then the temperature is brought to 820 ° C and lowered again to around 600 ° C. At this temperature, an aluminum monolayer is deposited (equivalent to a deposit of 10 seconds), then the temperature is increased to 650 ° C. At this temperature, ammonia and aluminum are simultaneously sent to form the buffer layer of aluminum nitride (AIN).
- AIN aluminum nitride
- the temperature is gradually increased to reach a temperature of the order of 900 ° C. and this temperature is kept to increase the 50 nanometers of AlN in the buffer layer (i.e. around 20 minutes under our conditions of growth).
- the temperature is lowered to around 780 ° C. and the growth of gallium nitride (GaN) is started. We grow a layer of GaN of 250 nanometers (about 15 minutes under our growth conditions).
- the growth of the monocrystalline layer of intermediate AlN is started.
- the beginning of the growth is done at 780 ° C, but the temperature is quickly increased to 900 ° C (the temperature rise lasts 2 minutes).
- the thickness of the intermediate AlN monocrystalline layer is 250 nm (equivalent to approximately 2 hours under our growth conditions).
- the temperature is lowered to around 780 ° C. and the growth of the GaN layer with a thickness of 1 ⁇ m is started, which is equivalent to approximately 1 hour.
- Example 4 comparativative
- a GaN layer of the same thickness as that of Example 3 (1 ⁇ m) is prepared, for comparison purposes, under the same conditions as Example 3, but omitting the monocrystalline interlayer layer of AlN.
- the silicon substrate is heated under ultra-vacuum for around ten hours around 600 ° C. to degas it. Then, it is introduced into the growth chamber and it is quickly brought to a temperature of the order of 950 ° C., in order to remove the layer of silicon oxide, which is on the surface. Then, the temperature is lowered to about 600 ° C to expose the silicon surface for 2 seconds to the flow of ammonia.
- the temperature is brought to 820 ° C and lowered again to around 600 ° C. At this temperature, an aluminum monolayer is deposited (equivalent to a deposit of 10 seconds), then the temperature is increased to 650 ° C. At this temperature, ammonia and aluminum are simultaneously sent to form the buffer layer of aluminum nitride (AIN). During the first two minutes, the temperature is gradually increased to reach a temperature of the order of 900 ° C. and this temperature is kept to increase the 50 nanometers of AlN in the buffer layer (i.e. around 20 minutes under our conditions of growth). Once the buffer layer is finished, the temperature is lowered to around 780 ° C and the growth of the GaN layer with a thickness of 1 micrometer is started, which is equivalent to approximately 1 hour.
- AIN aluminum nitride
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Priority Applications (8)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CA2411606A CA2411606C (fr) | 2000-06-09 | 2001-06-08 | Procede de preparation d'une couche de nitrure de gallium |
US10/297,494 US7273664B2 (en) | 2000-06-09 | 2001-06-08 | Preparation method of a coating of gallium nitride |
KR1020027016639A KR100897589B1 (ko) | 2000-06-09 | 2001-06-08 | 갈륨 나이트라이드층 형성방법 |
EP01943590.8A EP1290721B1 (fr) | 2000-06-09 | 2001-06-08 | Procede de preparation d'une couche de nitrure de gallium |
AU2001266131A AU2001266131A1 (en) | 2000-06-09 | 2001-06-08 | Preparation method of a coating of gallium nitride |
JP2002502823A JP5378634B2 (ja) | 2000-06-09 | 2001-06-08 | 窒化ガリウムまたはガリウムとその他の金属との混合窒化物のクラックを含まない単結晶層、その製造方法、及びそれを有する電子または光電子装置 |
US11/832,020 US7776154B2 (en) | 2000-06-09 | 2007-08-01 | Preparation method of a coating of gallium nitride |
US11/832,015 US7767307B2 (en) | 2000-06-09 | 2007-08-01 | Preparation method of a coating of gallium nitride |
Applications Claiming Priority (2)
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FR0007417A FR2810159B1 (fr) | 2000-06-09 | 2000-06-09 | Couche epaisse de nitrure de gallium ou de nitrure mixte de gallium et d'un autre metal, procede de preparation, et dispositif electronique ou optoelectronique comprenant une telle couche |
FR00/07417 | 2000-06-09 |
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US10297494 A-371-Of-International | 2001-06-08 | ||
US11/832,015 Continuation US7767307B2 (en) | 2000-06-09 | 2007-08-01 | Preparation method of a coating of gallium nitride |
US11/832,020 Continuation US7776154B2 (en) | 2000-06-09 | 2007-08-01 | Preparation method of a coating of gallium nitride |
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WO2001095380A1 true WO2001095380A1 (fr) | 2001-12-13 |
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PCT/FR2001/001777 WO2001095380A1 (fr) | 2000-06-09 | 2001-06-08 | Procede de preparation d'une couche de nitrure de gallium |
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Country | Link |
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US (3) | US7273664B2 (fr) |
EP (1) | EP1290721B1 (fr) |
JP (1) | JP5378634B2 (fr) |
KR (1) | KR100897589B1 (fr) |
CN (2) | CN101241883B (fr) |
AU (1) | AU2001266131A1 (fr) |
CA (1) | CA2411606C (fr) |
FR (1) | FR2810159B1 (fr) |
WO (1) | WO2001095380A1 (fr) |
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US8093077B2 (en) | 2008-03-25 | 2012-01-10 | S.O.I.Tec Silicon On Insulator Technologies | Method for manufacturing a layer of gallium nitride or gallium and aluminum nitride |
WO2013001014A1 (fr) | 2011-06-30 | 2013-01-03 | Soitec | Procédé de fabrication d'une couche épitaxiale épaisse de nitrure de gallium sur un substrat de silicium ou similaire et couche obtenue à l'aide dudit procédé |
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WO2003054921A2 (fr) * | 2001-12-21 | 2003-07-03 | Aixtron Ag | Procede de production de composants laser iii-v |
WO2003054921A3 (fr) * | 2001-12-21 | 2003-12-24 | Aixtron Ag | Procede de production de composants laser iii-v |
WO2003054929A3 (fr) * | 2001-12-21 | 2004-04-08 | Aixtron Ag | Procede de deposition de couches de semi-conducteurs iii-v sur un substrat non iii-v |
WO2003054929A2 (fr) * | 2001-12-21 | 2003-07-03 | Aixtron Ag | Procede de deposition de couches de semi-conducteurs iii-v sur un substrat non iii-v |
DE10256911B4 (de) * | 2002-11-30 | 2008-02-07 | Azzurro Semiconductors Ag | Gruppe-III-Nitrid Transistorbauelement auf Siliziumsubstrat |
DE10256911A1 (de) * | 2002-11-30 | 2004-06-17 | Armin Dr. Dadgar | Gruppe-III-Nitrid Transistorbauelement auf einem Siliziumsubstrat |
US7625447B2 (en) * | 2003-03-19 | 2009-12-01 | Japan Science And Technology Agency | Method of growing semiconductor crystal |
US8093077B2 (en) | 2008-03-25 | 2012-01-10 | S.O.I.Tec Silicon On Insulator Technologies | Method for manufacturing a layer of gallium nitride or gallium and aluminum nitride |
KR101186032B1 (ko) * | 2008-03-25 | 2012-09-25 | 피코기가 인터내셔널 | 질화갈륨 또는 질화알루미늄갈륨 층을 제조하는 방법 |
US8283673B2 (en) | 2008-03-25 | 2012-10-09 | Soitec | Method for manufacturing a layer of gallium nitride or gallium and aluminum nitride |
WO2011067276A1 (fr) | 2009-12-01 | 2011-06-09 | S.O.I.Tec Silicon On Insulator Technologies | Hétérostructure pour composants d'alimentation électroniques, composants optoélectroniques ou photovoltaïques |
US8759881B2 (en) | 2009-12-01 | 2014-06-24 | Soitec | Heterostructure for electronic power components, optoelectronic or photovoltaic components |
WO2013001014A1 (fr) | 2011-06-30 | 2013-01-03 | Soitec | Procédé de fabrication d'une couche épitaxiale épaisse de nitrure de gallium sur un substrat de silicium ou similaire et couche obtenue à l'aide dudit procédé |
US9093271B2 (en) | 2011-06-30 | 2015-07-28 | Soitec | Method for manufacturing a thick epitaxial layer of gallium nitride on a silicon or similar substrate and layer obtained using said method |
Also Published As
Publication number | Publication date |
---|---|
CN100380588C (zh) | 2008-04-09 |
CN101241883B (zh) | 2012-03-21 |
US20080050894A1 (en) | 2008-02-28 |
CN1436365A (zh) | 2003-08-13 |
EP1290721B1 (fr) | 2015-01-21 |
US20080188065A2 (en) | 2008-08-07 |
JP2003536257A (ja) | 2003-12-02 |
CN101241883A (zh) | 2008-08-13 |
CA2411606A1 (fr) | 2001-12-13 |
US20030136333A1 (en) | 2003-07-24 |
FR2810159A1 (fr) | 2001-12-14 |
AU2001266131A1 (en) | 2001-12-17 |
FR2810159B1 (fr) | 2005-04-08 |
KR100897589B1 (ko) | 2009-05-14 |
US7273664B2 (en) | 2007-09-25 |
KR20030007896A (ko) | 2003-01-23 |
US20080048207A1 (en) | 2008-02-28 |
US7767307B2 (en) | 2010-08-03 |
EP1290721A1 (fr) | 2003-03-12 |
JP5378634B2 (ja) | 2013-12-25 |
CA2411606C (fr) | 2010-03-16 |
US20080185611A2 (en) | 2008-08-07 |
US7776154B2 (en) | 2010-08-17 |
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