WO2001040855A1 - Afficheur a cristaux liquides et son procede de fabrication - Google Patents

Afficheur a cristaux liquides et son procede de fabrication Download PDF

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Publication number
WO2001040855A1
WO2001040855A1 PCT/JP2000/007834 JP0007834W WO0140855A1 WO 2001040855 A1 WO2001040855 A1 WO 2001040855A1 JP 0007834 W JP0007834 W JP 0007834W WO 0140855 A1 WO0140855 A1 WO 0140855A1
Authority
WO
WIPO (PCT)
Prior art keywords
bus line
spacer
liquid crystal
gate bus
display device
Prior art date
Application number
PCT/JP2000/007834
Other languages
English (en)
Japanese (ja)
Inventor
Akihiko Tateno
Mitsuaki Morimoto
Tazo Ikeguchi
Takashi Iwamoto
Masaki Ban
Hiroshi Murata
Masaaki Kubo
Original Assignee
Sekisui Chemical Co., Ltd.
Sharp Kabushiki Kaisha
Nisshin Engineering Inc.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sekisui Chemical Co., Ltd., Sharp Kabushiki Kaisha, Nisshin Engineering Inc. filed Critical Sekisui Chemical Co., Ltd.
Publication of WO2001040855A1 publication Critical patent/WO2001040855A1/fr

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Classifications

    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1339—Gaskets; Spacers; Sealing of cells
    • G02F1/13392—Gaskets; Spacers; Sealing of cells spacers dispersed on the cell substrate, e.g. spherical particles, microfibres

Definitions

  • the present invention relates to a method for manufacturing a liquid crystal display device using a TFT substrate and a liquid crystal display device.
  • the general structure of a liquid crystal display device is such that a spherical sensor 8 with a diameter of about 5 / m is distributed between two electrode substrates 1 and 2 to maintain a gap.
  • the two substrates are adhered by a sealant 4 and the gap space is filled with a liquid crystal 7:
  • the distance between the pair of electrode substrates, that is, the thickness of the liquid crystal layer, affects the light transmittance. Good display cannot be achieved unless it is kept constant over the entire display area of the liquid crystal display device.
  • one of the electrode substrates is a TFT substrate 2 on which a thin film transistor (TFT) is formed, and the other is a color filter (CF) substrate 1.
  • TFT thin film transistor
  • CF color filter
  • the structure of the TFT substrate is orthogonal to the source bus line 14a (S); the gate bus line 13a (G) and the Cs common bus line 15a (Cs).
  • a transistor 18 is formed at the GS line intersection corresponding to the pixel electrode 3.
  • the C s common bus line is a wiring for connecting to the auxiliary capacitance capacitor (C s).
  • the spacers are randomly and uniformly distributed on the TFT substrate on which the pixel electrodes are formed, so that the spacers are irregularly arranged on the TFT substrate.
  • the spacer is disposed on the pixel electrode, that is, on the display unit of the liquid crystal display device.
  • the spacer is generally formed of a synthetic resin, glass, or the like, and when placed on a pixel electrode, light escapes from the spacer, so that the aperture is substantially opened. As a result, the aperture ratio was reduced, and a problem such as a decrease in luminance / contrast occurred.
  • Japanese Patent Application Laid-Open No. Heisei 4-41226 discloses that the electric attractive force is applied to select and place a spacer, thereby reducing the amount of the spacer on the pixel electrode.
  • a method for suppressing the deterioration of screen quality is disclosed. In this method, the pixel electrode on the TFT substrate is grounded, the voltage is switched between the row selection line and the column selection line, a positive voltage is applied to the wiring other than the pixel electrode, and a negatively charged spacer is sprayed there. As a result, the spacer is selectively arranged in the wiring part by electric attraction.
  • the moisture adsorbed on the TFT substrate surface causes a leak in the substrate surface potential of the TFT substrate, and the surface potential of the pixel electrode rises. That is, since the entire TFT substrate has substantially the same potential and no potential difference occurs between the pixel electrode and the wiring portion, it is difficult to selectively dispose the spacer on the wiring.
  • a TFT substrate has a configuration in which one of a row selection line and a column selection line is a gate bus line for switching transistors, and the other is a source bus line for actually applying a voltage to a pixel electrode. ing.
  • the voltage applied to the source bus line is such that, for example, the gate bus line is grounded and the transistor's off-resistance (1 to 10 ⁇ ) from the source bus line even if the transistor switch is off.
  • the surface potential of the pixel electrode also rises.
  • the present invention provides a liquid crystal display device using a TF substrate, in which a spacer is selectively scattered to provide high-quality display characteristics free from a decrease in brightness or contrast due to the spacer.
  • Manufacturing method of liquid crystal display device having the same and manufactured by the manufacturing method It is an object to provide a liquid crystal display device.
  • the first is a TFT liquid crystal display device in which a spacer is dispersed between a TFT substrate and a color filter substrate, bonded with a sealant, and liquid crystal is injected into the gap.
  • This is a method for manufacturing a liquid crystal display device, which comprises applying a voltage to the substrate and spraying a charged spacer thereon.
  • the Cs two-mon bus line is a Ge-one! ⁇
  • the step of drying the TFT substrate on which the spacer is sprayed is performed by heating the substrate before spraying the spacer, raising the substrate temperature to 100 ° C or more, It is preferable that the sheet resistance is 1 ⁇ 10 12 ⁇ or more in sheet resistance.
  • the spraying of the spacer is performed when the substrate surface resistance of the dried TF substrate is 1 X 1 ⁇ ⁇ ⁇ ⁇ or more as a sheet resistance.
  • the step of selectively arranging the spacer on the gate bus line by using the above-described electric attraction is performed by applying a negative voltage to the gate bus line and applying a negative voltage to the source bus when the sprayer is positively charged. Grounding the line and the Cs common bus line, and applying a positive voltage to the gate bus line and grounding the source bus line and the Cs common bus line when the spreader is negatively charged. I like it.
  • the step of selectively arranging the spacer on the gate bus line by using the above-mentioned electric repulsive force is as follows. In addition, when the gate bus line is grounded and the spreader is negatively charged, it is preferable to apply a negative voltage to the source bus line and the Cs common bus line, and to ground the gate bus line.
  • the step of selectively arranging the spacer on the gate bus line using the above-mentioned electric attraction and electric repulsion is performed when the spreader is positively charged.
  • a positive voltage is applied to the Cs common bus line and a negative voltage is applied to the gate bus line, and the spreader is negatively charged, a negative voltage is applied to the sense bus line and the Cs common bus line. It is preferable to apply the positive voltage to the gate bus line.
  • the gate bus line and the source bus line it is preferable to apply a voltage only to the gate bus line and the source bus line to a TFT substrate having a structure in which the Cs common bus line is common to the gate bus line.
  • the voltage applied to the gate bus line, the nonce bus line, and the Cs common bus line is such that the potential difference between the gate bus line, the source bus line, and the Cs common bus line is 30 to
  • the voltage is 60 V:
  • the charged amount of the spreader is exactly 15 to ⁇ 250 C / g or 115 to 125 CZ g. It is preferable that there is.
  • the spacer is a mature plastic adhesive spacer or a photo-curing adhesive spacer, and is preferably fixed and arranged by heating or light irradiation after being selectively arranged on the gate bus line. .
  • the line width of the gate bus line is preferably at least three times the average particle diameter of the spacer.
  • the TFT substrate is annealed at a temperature of 150 ° C. or more to compensate for the TFT characteristics.
  • the liquid crystal display device manufactured by the first present invention is also one of the present invention.
  • a liquid crystal display device in which a TFT substrate and a color filter substrate are bonded together with a spacer and a sealant therebetween, and a liquid crystal is injected into a gap therebetween.
  • the gate is selectively arranged on a gate bus line formed on a TFT substrate using electric attraction and Z or repulsion, and a line width of the gate bus line is an average of the spacer.
  • This is a liquid crystal display device that is three times or more the particle size.
  • the width of the gate bus line not covered by the pixel electrode is preferably 4 to 5 times the average particle diameter of the spacer.
  • FIG. 2 is a conceptual plan view showing the wiring of the TFT substrate used in the present invention.
  • FIG. 3 is a conceptual diagram for explaining a line width of an effective gate line in the present invention.
  • FIG. 4 is an enlarged plan view showing a state when a spacer is sprayed on the TFT substrate according to the first invention.
  • FIG. 5 is an enlarged plan view showing a state in which a spacer is sprayed on a TFT substrate by a conventional method of manufacturing a liquid crystal display device.
  • FIG. 6 is a conceptual diagram showing a structure of a general liquid crystal display device.
  • 1 to 6 1 represents an electrode substrate (CF substrate), 2 represents an electrode substrate (TFT substrate), 3 represents a pixel electrode, 4 represents a sealant, 7 represents a liquid crystal, 8 represents a spacer, 10 represents a container, 11 a represents a spray nozzle, 11 b represents a spacer supply device, 1 2 represents a voltage applying device, 13 a represents a gate bus line, 13 b represents a gate contact pad, 14 a represents a source bus line, and 14 b represents a source contact pad.
  • 15a represents the Cs common bus line
  • 15b represents the Cs contact pad
  • 16a, 16b, and 16c represent the probe pins
  • Reference numeral 17 denotes a spray pipe
  • 18 denotes a transistor
  • 19 denotes a gap between pixel electrodes
  • 20 denotes an insulating film.
  • a spacer is dispersed and arranged between a TFT substrate having been subjected to an alignment treatment and a filter substrate and bonded with a sealant, and a liquid crystal is filled in the gap.
  • a method of manufacturing a TFT liquid crystal display device by injecting, wherein a step of drying a TFT substrate on which a spacer is sprayed, and a step of forming a spacer by using an electric attraction and / or an electric repulsion. And selectively arranging them on the bus line.
  • the step of drying the TFT substrate on which the spacer is sprayed is performed by heating the substrate before spraying the spacer, and raising the substrate temperature to 100 ° C.
  • the substrate surface resistance is preferably 1 ⁇ 10 12 ⁇ / port or more in sheet resistance. ⁇ F ⁇ ⁇ As the temperature of the substrate rises, the amount of adhering water decreases, so the resistance on the substrate surface increases, no current leaks, and stable placement of the sensor can be performed stably. Become like More preferably, the substrate temperature is 120 to 150 ° C., and the substrate surface resistance is 1 ⁇ 10 12 to 1 ⁇ 10 14 ⁇ / cm2 in sheet resistance.
  • the TFT substrate can be heated by a hot plate, a hot-air circulation oven, an infrared furnace, or the like.
  • the TFT substrate When a hot plate is used in the step of drying the TFT substrate, the TFT substrate may be brought into close contact with the hot plate heated to 120 C for 5 minutes or more.
  • a spacer is sprayed on the second TFT substrate.
  • the sprayer is sprayed, and the substrate surface resistance of the dried TFT substrate is 1 ⁇ 1 in sheet resistance. If the substrate surface resistance of the TFT substrate is less than 1 ⁇ 10 "0 in sheet resistance, current may leak on the TFT substrate and a spacer may be formed. May not be able to be selected and placed with high accuracy. More preferably, it carried out at 1 X 1 o u ⁇ 1 X 1 ⁇ 14 ⁇ in sheet resistance. In order to prevent moisture from re-adhering to the substrate surface after drying, it is preferable to spray a spacer within 5 minutes after drying or to fill the inside of the spraying device with dry nitrogen.
  • the step of selectively arranging a sensor on the gate bus line by using the above-described electric attraction and ⁇ or electric repulsion includes the step of forming the gate bus line and the source bus line formed on the TFT substrate. A voltage is individually applied to each of the wires, and a charged spacer is sprayed there.
  • the Cs common bus line is a TFT substrate that is not common to the gate bus line
  • a voltage is individually applied to each of the gate bus line, the source bus line, and the Cs common bus line.
  • the method of selectively arranging the spacer on the gate bus line using the above-mentioned electric attraction is to apply a negative voltage to the gate bus line when the spacer to be sprayed is positively charged, and to apply the negative voltage to the source bus line and the source bus line. Ground the Cs common bus line.
  • the method of selectively arranging the spacer on the gate bus line by using the above-mentioned electric repulsive force is as follows. When the scattered sensor is positively charged, a positive voltage is applied to the source bus line and the Cs common bus line. And ground the gate bus line. When the spreader is negatively charged, a negative voltage is applied to the source bus line and the Cs common bus line, and the gate bus line is grounded.
  • the method of selectively arranging the bus on the gate bus line by using the above-mentioned electric attraction and electric repulsion is as follows.
  • the source bus line and the Cs common bus line are used. Apply a positive voltage to, and apply a negative voltage to the gate bus line.
  • the spreader is negatively charged, a negative voltage is applied to the source bus line and the Cs common bus line, and a positive voltage is applied to the gate bus line.
  • a TFT substrate having a structure in which the Cs common bus line is common to the gate bus line can be used.
  • the spacer is effective. Specifically, it can be selectively arranged on the gate bus line.
  • the voltage applied to the gate bus line, the single bus line, and the Cs common bus line is such that the potential difference between the gate bus line, the source bus line, and the Cs common bus line is 30 to It is preferably 60 V. Among them, the potential difference is more preferably about 40 V.
  • the amount of charge of the spacer sprayed in the invention is preferably 125500 / ic / g or 15250C / g. More preferably, the charge amount measured by a suction type Faraday gauge is 15 + 200 CZg or
  • the optimum charge amount is subdivided depending on the specific gravity of the above-mentioned sensor and the particle diameter.
  • a preferable charge amount is 15 to 60 CZg or -156 C / g.
  • the suitable charge amount is T 20 ⁇ 80 C / g or ⁇ 2080 ⁇ C / g, and when the particle size is 3.0 zm, The appropriate charge amount is ⁇ 520 ⁇ C / g or 150 ⁇ C / g. If the charge amount of the above-mentioned spacer is too small or too large, inconvenience occurs.
  • the spacer used in the first present invention is a thermoplastic adhesive spacer or a photo-curing adhesive spacer, which is selectively arranged on a gate bus line and then bonded by heating or light irradiation. Preferably, it is fixed.
  • thermoplastic adhesive spacer or photo-curable adhesive spacer is used to bond and fix the spacer on the gate bus line.
  • the spacer is prevented from moving on the gate bus line.
  • the line width of the gate bus line formed on the TFT substrate is preferably at least three times the average particle diameter of the spacer.
  • the spacer can be effectively arranged on the gate bus line. More preferably, it is 45 times.
  • the line width of the gate bus line is at least 15 m, and preferably about 20 to 25 / im.
  • the selection arrangement ratio is reduced, the gate bus line is deviated from the gate bus line, and the gate line is disposed on the pixel electrode. May increase. This is because repulsive force is exerted between the sensor placed first on the gate bus line and the later-distributed spacer because the spacers have the same polarity potential. This is because it is difficult to work and fit in a narrow space.
  • a method of improving the selective placement ratio of the gate is as follows. There is a method in which the potential difference between the common bus line and the common bus line is set slightly higher at 50 to 60 V. At this voltage, the characteristic shift of the transistor described above starts to occur, but with this level of characteristic shift, the TFT substrate should be annealed at 150 ° C or higher for about 1 hour after spraying. As a result, the TFT characteristics are restored.
  • the TFT substrate after spraying the spacer, can be annealed at a temperature of 150 ° C. or more to compensate for the TFT characteristics. More preferably, annealing is performed at about 20 ° C.
  • the two substrates are bonded together to cure the sealant. It is annealed automatically for firing for about an hour.
  • a TFT substrate on which a sensor is selectively arranged as described above and a CF substrate are bonded and adhered with a sealant, and a liquid crystal is filled in a gap between the substrates to form a liquid crystal display.
  • the device is manufactured.
  • the first aspect of the present invention has the above-described configuration, it is possible to provide a liquid crystal display device having high-quality display characteristics without a decrease in brightness or contrast due to a speaker.
  • the liquid crystal display device manufactured according to the first aspect of the present invention is also one aspect of the present invention.
  • the second invention is a liquid crystal display device in which a TFT substrate and a color filter substrate are bonded together with a spacer and a sealant interposed therebetween, and a liquid crystal is injected into a gap therebetween.
  • the spacer is selectively disposed on a gate bus line formed on a TFT substrate by using an electric attractive force and Z or a repulsive force, and the line width of the gate bus line is This is a liquid crystal display device with an average particle diameter of three times or more.
  • the width of the gate bus line that is not covered by the pixel electrode corresponds to the effective gate bus line width.
  • the width of the gate bus line that is not covered with the pixel electrode is 4 to 5 times the average particle diameter of the spacer because the spacer is effectively selected and arranged on the gate bus line. Is preferred.
  • the second invention can be manufactured, for example, by using the first invention.
  • FIG. 1 is a conceptual diagram showing a sprinkler spray device used in the present invention.
  • a nozzle 11 a for spraying the charged spacer 8 is provided at the upper end of the container 10.
  • An apparatus 11 b for supplying a spacer 8 is connected to the spray nozzle 11 a via a spray pipe 17.
  • a TFT substrate 2 on which a gate bus line, a source bus line, and a Cs common bus line are formed is provided below the container 10.
  • the probe pins 16a, 16b, and 16c are individually contacted with the gate bus line, source bus line, and Cs common bus line of the TFT substrate 2, respectively.
  • a voltage is applied to the TFT substrate 2 and the charged spacers 8 are sprayed on the TFT substrate 2 to select the spacers 8 on the gate bus line using electric attraction and electric or repulsion. Place
  • the method of charging the base 8 is as follows: the spraying pipe 17 and the spraying nozzle 11a shown in FIG. 1 are made of stainless steel, Teflon, Nymouth or urethane resin. When the spreader 8 passes through the spraying pipe 17 and the spraying nozzle 11 a, the charge generated by friction is used.
  • a charging gun method using corona discharge is not preferable.
  • the potential of the spacer is too high, and the repulsion between the controllers is strong. Therefore, the arrangement on the game bus line is deteriorated.
  • FIG. 2 is a conceptual diagram showing a wiring structure of a TFT substrate which is not invented.
  • a gate contact pad 13b for applying a voltage to the gate bus line 13a a source contact pad 14b for applying a voltage to the source bus line 14a
  • a C s dimon pad 15 b for applying a voltage to the C s common bus line 15 a is provided, and here the Pc-pins 16 a, 16 b, and 16 c shown in FIG. 1 are provided.
  • Each is contacted.
  • These contact pads may be provided at a plurality of points on one TFT substrate in order to facilitate wiring or to reduce wiring resistance, and may be combined at one point.
  • FIG. 3 is a conceptual diagram for explaining the effective gate bus line width in the invention.
  • the pixel electrode 3 is formed on the insulating film 20 formed on the gate bus line 13a.
  • the gate bus line 13a is disposed so as to cover the gate bus line 13a to make the display area large.
  • the gap 19 between the pixel electrodes corresponds to the effective line width of the gate bus line.
  • the effective width of the gate bus line is at least three times the average particle diameter of the spacer in order to effectively select and place the spacer on the gate bus line. Is preferred. BEST MODE FOR CARRYING OUT THE INVENTION
  • Gate bus lines were formed and patterned on a transparent glass substrate, and then a gate insulating film was formed. Furthermore, the TFT electrode was formed by performing film formation and patterning operations on the pixel electrode, the source bus line, and the Cs common bus line, respectively.
  • the electrode pattern of the TFT substrate was formed as shown in Fig. 2, and the line width of the gate bus line was about 20 m.
  • a common electrode substrate for a TFT type liquid crystal display was prepared as a CF substrate. These two substrates were subjected to an orientation treatment.
  • a spacer A thermoplastic spacer having an average particle size of about 5 ⁇ m was prepared.
  • the prepared TFT substrate was adhered to a hot plate heated to 120 ° C. for 10 minutes. After the drying process, the substrate surface resistance of the TFT substrate was 1 ⁇ 10 " ⁇ in sheet resistance. Immediately after the drying process, the TFT substrate was set on the spraying device shown in FIG. As a result, a positive voltage was applied to the gate bus line on the TFT substrate, the source bus line and the Cs common bus line were grounded, and the spacer was negatively charged and sprayed. The potential difference between the source bus line and the Cs common bus line was 43 V.
  • the results of observing the TFT substrate on which the spacers were sprayed with an optical microscope are shown in FIG. Most spacers 8 were selectively arranged on the gate bus line 13a.
  • the TFT substrate was subjected to a heat treatment, and the spacer was bonded and fixed.
  • a liquid crystal display device was manufactured through the steps of seal formation, bonding, substrate cutting, and liquid crystal injection.
  • the obtained liquid crystal display has high contrast and good display characteristics because there is no light leakage due to the spacer.
  • Example 2 The operation was performed in the same manner as in Example 1 except that a negative voltage was applied to the source bus line and the Cs common bus line, and the gate bus line was grounded. At this time, the potential difference between the gate bus line on the substrate, the source bus line and the Cs common bus line was 39 V.
  • Example 1 The drying step was omitted in Example 1, or the heating time in the drying step was 5 minutes, and the heating temperature was 80. C.
  • a liquid crystal display device was manufactured in the same manner as in Example 1 except that the temperature was changed to 100 ° C. or 120 ° C.
  • Table 1 shows the relationship between the substrate heating temperature and the spraying rate of the spreader in this case. According to Table 1, when the TFT substrate is heated to 100 ° C or more, about 90% or more of the spacers are selectively arranged on the gate bus line. The display characteristics of the device were extremely good.
  • the present invention has the above-described configuration, in a liquid crystal display device using a TFT substrate, a spacer on a pixel electrode is eliminated or greatly reduced, and luminance due to the spacer is reduced. It is possible to provide a liquid crystal display device having high quality display characteristics without a decrease or a decrease in nintrast.

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  • Physics & Mathematics (AREA)
  • Nonlinear Science (AREA)
  • Liquid Crystal (AREA)
  • Mathematical Physics (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)

Abstract

L'invention porte sur un afficheur à cristaux liquides à substrat de TFT dans lequel les séparateurs sont répartis sélectivement pour les empêcher de réduire la brillance et le contraste. Selon le procédé de l'invention, un substrat de TFT et un substrat de filtre de couleur sont liés l'un à l'autre. A cet effet on fait sécher un substrat de TFT où sont répartis les séparateurs, que l'on arrange sélectivement sur les lignes des bus de ports au moyen d'attractions et/ou de répulsions électriques en appliquant des tensions aux différents conducteurs des lignes des bus de ports et des lignes des bus de sources pour disperser les séparateurs chargés.
PCT/JP2000/007834 1999-12-03 2000-11-08 Afficheur a cristaux liquides et son procede de fabrication WO2001040855A1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP34525199 1999-12-03
JP11/345251 1999-12-03

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Publication Number Publication Date
WO2001040855A1 true WO2001040855A1 (fr) 2001-06-07

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CN (1) CN1264058C (fr)
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WO (1) WO2001040855A1 (fr)

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101345865B1 (ko) * 2012-04-05 2013-12-30 하이디스 테크놀로지 주식회사 스페이서를 기판에 고착하는 방법 및 고착장치
JP2017107192A (ja) * 2015-11-26 2017-06-15 芝浦メカトロニクス株式会社 表示装置用部材の製造装置及び製造方法

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04333826A (ja) * 1991-05-10 1992-11-20 Toshiba Corp 液晶表示素子とその製造方法
EP0644452A2 (fr) * 1993-09-20 1995-03-22 Hitachi, Ltd. Dispositif d'affichage à cristal liquide
JPH0876132A (ja) * 1994-09-06 1996-03-22 Fujitsu Ltd 液晶表示装置の製造方法
JPH08262454A (ja) * 1995-03-22 1996-10-11 Semiconductor Energy Lab Co Ltd 液晶表示装置の作製方法
EP0772073A1 (fr) * 1995-10-31 1997-05-07 International Business Machines Corporation Dispositif d'affichage à cristal liquide
JPH10104637A (ja) * 1996-09-30 1998-04-24 Sekisui Chem Co Ltd 液晶表示素子の製造方法
JPH11202345A (ja) * 1998-01-19 1999-07-30 Hitachi Ltd 液晶表示装置の製造方法

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04333826A (ja) * 1991-05-10 1992-11-20 Toshiba Corp 液晶表示素子とその製造方法
EP0644452A2 (fr) * 1993-09-20 1995-03-22 Hitachi, Ltd. Dispositif d'affichage à cristal liquide
JPH0876132A (ja) * 1994-09-06 1996-03-22 Fujitsu Ltd 液晶表示装置の製造方法
JPH08262454A (ja) * 1995-03-22 1996-10-11 Semiconductor Energy Lab Co Ltd 液晶表示装置の作製方法
EP0772073A1 (fr) * 1995-10-31 1997-05-07 International Business Machines Corporation Dispositif d'affichage à cristal liquide
JPH10104637A (ja) * 1996-09-30 1998-04-24 Sekisui Chem Co Ltd 液晶表示素子の製造方法
JPH11202345A (ja) * 1998-01-19 1999-07-30 Hitachi Ltd 液晶表示装置の製造方法

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CN1433530A (zh) 2003-07-30
CN1264058C (zh) 2006-07-12
KR20020074155A (ko) 2002-09-28
KR100720884B1 (ko) 2007-05-22
TWI286650B (en) 2007-09-11

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