WO2001040855A1

WO2001040855A1 - Lcd device and method of manufacture thereof

Info

Publication number: WO2001040855A1
Application number: PCT/JP2000/007834
Authority: WO
Inventors: Akihiko Tateno; Mitsuaki Morimoto; Tazo Ikeguchi; Takashi Iwamoto; Masaki Ban; Hiroshi Murata; Masaaki Kubo
Original assignee: Sekisui Chemical Co., Ltd.; Sharp Kabushiki Kaisha; Nisshin Engineering Inc.
Priority date: 1999-12-03
Filing date: 2000-11-08
Publication date: 2001-06-07
Also published as: CN1264058C; KR100720884B1; CN1433530A; TWI286650B; KR20020074155A

Abstract

A high-quality LCD using a TFT substrate, in which spacers are scattered selectively to prevent the spacers from causing decreases in brightness and contrast. According to a method of the invention, a TFT substrate and a color filter substrate are joined with spacers scattered and liquid crystal sealed between them. The method comprises the steps of drying a TFT substrate on which spacers are scattered, and selectively arranging spacers on gate bus lines by means of electrical attraction and/or repulsion. The step of selectively arranging spacers on gate bus lines by means of electrical attraction and/or repulsion includes applying voltage to the individual conductors of gate bus lines and source bus lines and scattering charged spacers.

Description

Specification

Liquid crystal display device manufacturing method and liquid crystal display device

The present invention relates to a method for manufacturing a liquid crystal display device using a TFT substrate and a liquid crystal display device. Background art

As shown in Fig. 6, the general structure of a liquid crystal display device is such that a spherical sensor 8 with a diameter of about 5 / m is distributed between two electrode substrates 1 and 2 to maintain a gap. The two substrates are adhered by a sealant 4 and the gap space is filled with a liquid crystal 7: The distance between the pair of electrode substrates, that is, the thickness of the liquid crystal layer, affects the light transmittance. Good display cannot be achieved unless it is kept constant over the entire display area of the liquid crystal display device.

In the TFT liquid crystal display device, one of the electrode substrates is a TFT substrate 2 on which a thin film transistor (TFT) is formed, and the other is a color filter (CF) substrate 1. In the TFT liquid crystal display device, after subjecting the TFT substrate 2 and the CF substrate 1 to an orientation treatment, a sensor 8 is dispersed and arranged between the two substrates, and the substrates are bonded with a sealant 4, and a liquid crystal is provided in the gap. Manufactured by filling 7.

As shown in Fig. 2, the structure of the TFT substrate is orthogonal to the source bus line 14a (S); the gate bus line 13a (G) and the Cs common bus line 15a (Cs). A transistor 18 is formed at the GS line intersection corresponding to the pixel electrode 3. The C s common bus line is a wiring for connecting to the auxiliary capacitance capacitor (C s).

In the conventional method of manufacturing a TFT liquid crystal display device, the spacers are randomly and uniformly distributed on the TFT substrate on which the pixel electrodes are formed, so that the spacers are irregularly arranged on the TFT substrate. The spacer is disposed on the pixel electrode, that is, on the display unit of the liquid crystal display device. The spacer is generally formed of a synthetic resin, glass, or the like, and when placed on a pixel electrode, light escapes from the spacer, so that the aperture is substantially opened. As a result, the aperture ratio was reduced, and a problem such as a decrease in luminance / contrast occurred.

As a method for solving this problem, Japanese Patent Application Laid-Open No. Heisei 4-41226 discloses that the electric attractive force is applied to select and place a spacer, thereby reducing the amount of the spacer on the pixel electrode. A method for suppressing the deterioration of screen quality is disclosed. In this method, the pixel electrode on the TFT substrate is grounded, the voltage is switched between the row selection line and the column selection line, a positive voltage is applied to the wiring other than the pixel electrode, and a negatively charged spacer is sprayed there. As a result, the spacer is selectively arranged in the wiring part by electric attraction.

However, when a voltage is applied to the wiring of the TFT substrate using the method described above, the moisture adsorbed on the TFT substrate surface causes a leak in the substrate surface potential of the TFT substrate, and the surface potential of the pixel electrode rises. That is, since the entire TFT substrate has substantially the same potential and no potential difference occurs between the pixel electrode and the wiring portion, it is difficult to selectively dispose the spacer on the wiring.

In general, a TFT substrate has a configuration in which one of a row selection line and a column selection line is a gate bus line for switching transistors, and the other is a source bus line for actually applying a voltage to a pixel electrode. ing. In this TFT substrate, the voltage applied to the source bus line is such that, for example, the gate bus line is grounded and the transistor's off-resistance (1 to 10 Ω) from the source bus line even if the transistor switch is off. , Or from the Cs common bus line through the Cs capacitor, the surface potential of the pixel electrode also rises. Therefore, when the voltage is switched between the row selection line and the column selection line at a rate of 5 to 30 times per second as in the above-described method, the surface potential of the pixel electrode is increased by being dragged by the voltage of the source bus line. However, the potential difference between the pixel electrode and the source bus line disappears, and the effect of selectively arranging the spacer is insufficient. Summary of the Invention

SUMMARY OF THE INVENTION In view of the above, the present invention provides a liquid crystal display device using a TF substrate, in which a spacer is selectively scattered to provide high-quality display characteristics free from a decrease in brightness or contrast due to the spacer. Manufacturing method of liquid crystal display device having the same and manufactured by the manufacturing method It is an object to provide a liquid crystal display device.

The first is a TFT liquid crystal display device in which a spacer is dispersed between a TFT substrate and a color filter substrate, bonded with a sealant, and liquid crystal is injected into the gap. A method of drying the TFT substrate on which the spacers are sprayed, and a step of selectively disposing the spacers on the gate bus line using electric attraction and Z or electric repulsion, The step of selectively arranging the spacer on the gate bus line using the electric attraction and Z or the electric repulsion is performed separately for each of the gate bus line and the source bus line formed on the TFT substrate. This is a method for manufacturing a liquid crystal display device, which comprises applying a voltage to the substrate and spraying a charged spacer thereon. In the first aspect of the present invention, the Cs two-mon bus line is a Ge-one! ^ In the case of TFT substrates that are not common to bus lines, it is preferable to apply voltages individually to the gate bus line, source bus line, and Cs common bus line.

The step of drying the TFT substrate on which the spacer is sprayed is performed by heating the substrate before spraying the spacer, raising the substrate temperature to 100 ° C or more, It is preferable that the sheet resistance is 1 × 10 ¹² Ω or more in sheet resistance.

In the first aspect of the present invention, it is preferable that the spraying of the spacer is performed when the substrate surface resistance of the dried TF substrate is 1 X 1 Ο ^ Ω で or more as a sheet resistance.

The step of selectively arranging the spacer on the gate bus line by using the above-described electric attraction is performed by applying a negative voltage to the gate bus line and applying a negative voltage to the source bus when the sprayer is positively charged. Grounding the line and the Cs common bus line, and applying a positive voltage to the gate bus line and grounding the source bus line and the Cs common bus line when the spreader is negatively charged. I like it. The step of selectively arranging the spacer on the gate bus line by using the above-mentioned electric repulsive force is as follows. In addition, when the gate bus line is grounded and the spreader is negatively charged, it is preferable to apply a negative voltage to the source bus line and the Cs common bus line, and to ground the gate bus line. Masure, The step of selectively arranging the spacer on the gate bus line using the above-mentioned electric attraction and electric repulsion is performed when the spreader is positively charged. When a positive voltage is applied to the Cs common bus line and a negative voltage is applied to the gate bus line, and the spreader is negatively charged, a negative voltage is applied to the sense bus line and the Cs common bus line. It is preferable to apply the positive voltage to the gate bus line.

In the first aspect of the present invention, it is preferable to apply a voltage only to the gate bus line and the source bus line to a TFT substrate having a structure in which the Cs common bus line is common to the gate bus line.

In the first aspect of the present invention, the voltage applied to the gate bus line, the nonce bus line, and the Cs common bus line is such that the potential difference between the gate bus line, the source bus line, and the Cs common bus line is 30 to Preferably, the voltage is 60 V: In the first aspect of the present invention, the charged amount of the spreader is exactly 15 to ^ 250 C / g or 115 to 125 CZ g. It is preferable that there is.

The spacer is a mature plastic adhesive spacer or a photo-curing adhesive spacer, and is preferably fixed and arranged by heating or light irradiation after being selectively arranged on the gate bus line. .

The line width of the gate bus line is preferably at least three times the average particle diameter of the spacer.

In the first present invention, it is preferable that after spraying the spacer, the TFT substrate is annealed at a temperature of 150 ° C. or more to compensate for the TFT characteristics.

The liquid crystal display device manufactured by the first present invention is also one of the present invention. According to a second aspect of the present invention, there is provided a liquid crystal display device in which a TFT substrate and a color filter substrate are bonded together with a spacer and a sealant therebetween, and a liquid crystal is injected into a gap therebetween. The gate is selectively arranged on a gate bus line formed on a TFT substrate using electric attraction and Z or repulsion, and a line width of the gate bus line is an average of the spacer. This is a liquid crystal display device that is three times or more the particle size. In the second aspect of the present invention, the width of the gate bus line not covered by the pixel electrode is preferably 4 to 5 times the average particle diameter of the spacer. BRIEF DESCRIPTION OF THE FIGURES FIG. 1 is a conceptual diagram of a spacer application device used in the present invention.

FIG. 2 is a conceptual plan view showing the wiring of the TFT substrate used in the present invention. FIG. 3 is a conceptual diagram for explaining a line width of an effective gate line in the present invention.

FIG. 4 is an enlarged plan view showing a state when a spacer is sprayed on the TFT substrate according to the first invention.

FIG. 5 is an enlarged plan view showing a state in which a spacer is sprayed on a TFT substrate by a conventional method of manufacturing a liquid crystal display device.

FIG. 6 is a conceptual diagram showing a structure of a general liquid crystal display device.

1 to 6, 1 represents an electrode substrate (CF substrate), 2 represents an electrode substrate (TFT substrate), 3 represents a pixel electrode, 4 represents a sealant, 7 represents a liquid crystal, 8 represents a spacer, 10 represents a container, 11 a represents a spray nozzle, 11 b represents a spacer supply device, 1 2 represents a voltage applying device, 13 a represents a gate bus line, 13 b represents a gate contact pad, 14 a represents a source bus line, and 14 b represents a source contact pad. 15a represents the Cs common bus line, 15b represents the Cs contact pad, 16a, 16b, and 16c represent the probe pins, Reference numeral 17 denotes a spray pipe, 18 denotes a transistor, 19 denotes a gap between pixel electrodes, and 20 denotes an insulating film. Detailed Disclosure of the Invention

Hereinafter, the present invention will be described in detail.

In the first method of manufacturing a liquid crystal display device of the present invention, a spacer is dispersed and arranged between a TFT substrate having been subjected to an alignment treatment and a filter substrate and bonded with a sealant, and a liquid crystal is filled in the gap. A method of manufacturing a TFT liquid crystal display device by injecting, wherein a step of drying a TFT substrate on which a spacer is sprayed, and a step of forming a spacer by using an electric attraction and / or an electric repulsion. And selectively arranging them on the bus line. The step of drying the TFT substrate on which the spacer is sprayed is performed by heating the substrate before spraying the spacer, and raising the substrate temperature to 100 ° C. or more, The substrate surface resistance is preferably 1 × 10 ¹² Ω / port or more in sheet resistance. Τ F する As the temperature of the substrate rises, the amount of adhering water decreases, so the resistance on the substrate surface increases, no current leaks, and stable placement of the sensor can be performed stably. Become like More preferably, the substrate temperature is 120 to 150 ° C., and the substrate surface resistance is 1 × 10 ¹² to 1 × 10 ¹⁴ Ω / cm2 in sheet resistance.

The TFT substrate can be heated by a hot plate, a hot-air circulation oven, an infrared furnace, or the like.

When a hot plate is used in the step of drying the TFT substrate, the TFT substrate may be brought into close contact with the hot plate heated to 120 C for 5 minutes or more. In the first present invention, after drying the TFT substrate as described above, a spacer is sprayed on the second TFT substrate.

In the first aspect of the present invention, the sprayer is sprayed, and the substrate surface resistance of the dried TFT substrate is 1 × 1 in sheet resistance. If the substrate surface resistance of the TFT substrate is less than 1 × 10 "0 in sheet resistance, current may leak on the TFT substrate and a spacer may be formed. May not be able to be selected and placed with high accuracy. More preferably, it carried out at ^{1 X 1 o u ~ 1 X} 1 ο 14 ΩΖϋ in sheet resistance. In order to prevent moisture from re-adhering to the substrate surface after drying, it is preferable to spray a spacer within 5 minutes after drying or to fill the inside of the spraying device with dry nitrogen.

In the first aspect of the present invention, the step of selectively arranging a sensor on the gate bus line by using the above-described electric attraction and Ζ or electric repulsion includes the step of forming the gate bus line and the source bus line formed on the TFT substrate. A voltage is individually applied to each of the wires, and a charged spacer is sprayed there.

When the Cs common bus line is a TFT substrate that is not common to the gate bus line, a voltage is individually applied to each of the gate bus line, the source bus line, and the Cs common bus line.

The method of selectively arranging the spacer on the gate bus line using the above-mentioned electric attraction is to apply a negative voltage to the gate bus line when the spacer to be sprayed is positively charged, and to apply the negative voltage to the source bus line and the source bus line. Ground the Cs common bus line. When the spacer to be sprayed is negatively charged, apply a positive voltage to the gate bus line, and It consists of grounding the sub bus line and the C s common bus line. The method of selectively arranging the spacer on the gate bus line by using the above-mentioned electric repulsive force is as follows. When the scattered sensor is positively charged, a positive voltage is applied to the source bus line and the Cs common bus line. And ground the gate bus line. When the spreader is negatively charged, a negative voltage is applied to the source bus line and the Cs common bus line, and the gate bus line is grounded.

The method of selectively arranging the bus on the gate bus line by using the above-mentioned electric attraction and electric repulsion is as follows. When the spreader is positively charged, the source bus line and the Cs common bus line are used. Apply a positive voltage to, and apply a negative voltage to the gate bus line. When the spreader is negatively charged, a negative voltage is applied to the source bus line and the Cs common bus line, and a positive voltage is applied to the gate bus line.

The effects of the selective placement of the spacers by the above three methods are almost the same, but since only one power source is required, A repulsion method using a repulsive force is economically preferable.

In the first invention, a TFT substrate having a structure in which the Cs common bus line is common to the gate bus line can be used. When a TFT substrate having a structure in which the Cs common bus line is common to the gate bus line is used, by applying a voltage to only the gate bus line and the source bus line as described above, the spacer is effective. Specifically, it can be selectively arranged on the gate bus line.

In the first aspect of the present invention, the voltage applied to the gate bus line, the single bus line, and the Cs common bus line is such that the potential difference between the gate bus line, the source bus line, and the Cs common bus line is 30 to It is preferably 60 V. Among them, the potential difference is more preferably about 40 V.

The greater the potential difference between the gate bus line, the source bus line, and the Cs common bus line, the better the selectivity of the spacer, but if the potential difference is too large, the transistor is destroyed and the on / off characteristics shift. The problem arises. According to an experiment, the characteristic shift of the transistor is seen at the boundary of the potential difference of 50 to 60 V, and when the potential difference exceeds 200 V, the transistor is destroyed in an insulated manner. 1st: The amount of charge of the spacer sprayed in the invention is preferably 125500 / ic / g or 15250C / g. More preferably, the charge amount measured by a suction type Faraday gauge is 15 + 200 CZg or

— 1 5 20 O CZg.

More specifically, the optimum charge amount is subdivided depending on the specific gravity of the above-mentioned sensor and the particle diameter. For example, in a baser having a specific gravity of 1.0 to 1.3 and a particle size of 5.0 / m, a preferable charge amount is 15 to 60 CZg or -156 C / g. When the particle size is 4.5 m, the suitable charge amount is T 20 ÷ 80 C / g or −2080 μC / g, and when the particle size is 3.0 zm, The appropriate charge amount is τ520 μC / g or 150 μC / g. If the charge amount of the above-mentioned spacer is too small or too large, inconvenience occurs. If the charge of the spacer is too low, the electrostatic force will weaken and the spacer may not be properly positioned on the gate bus line. In addition, the electric attraction of the spacer to the gate bus line is weakened, and when the scattered airflow hits the substrate and flows outside the substrate, the airflow causes the spacer to escape to the outside of the substrate, and the number of sprayed particles to the substrate is small. Sometimes. If the charge amount of the spacer is too large, the repulsive force between the switches becomes strong, and the newly sprayed spacer is repelled by the potential of the spacer previously placed on the gate bus line. The spacers may not be densely arranged on the gate bus line. The spacer used in the first present invention is a thermoplastic adhesive spacer or a photo-curing adhesive spacer, which is selectively arranged on a gate bus line and then bonded by heating or light irradiation. Preferably, it is fixed.

The above-mentioned thermoplastic adhesive spacer or photo-curable adhesive spacer is used to bond and fix the spacer on the gate bus line. When the display device is used, the spacer is prevented from moving on the gate bus line.

In the first aspect of the present invention, the line width of the gate bus line formed on the TFT substrate is preferably at least three times the average particle diameter of the spacer. When the line width of the gate bus line is three times or more the average particle diameter of the spacer, the spacer can be effectively arranged on the gate bus line. More preferably, it is 45 times. For example, when spraying a baser having a diameter of 5 / m, the line width of the gate bus line is at least 15 m, and preferably about 20 to 25 / im.

When the line width of the gate bus line is less than three times the average particle diameter of the spacer, the selection arrangement ratio is reduced, the gate bus line is deviated from the gate bus line, and the gate line is disposed on the pixel electrode. May increase. This is because repulsive force is exerted between the sensor placed first on the gate bus line and the later-distributed spacer because the spacers have the same polarity potential. This is because it is difficult to work and fit in a narrow space.

When the line width of the gate bus line is less than three times the average particle size of the gate, a method of improving the selective placement ratio of the gate is as follows. There is a method in which the potential difference between the common bus line and the common bus line is set slightly higher at 50 to 60 V. At this voltage, the characteristic shift of the transistor described above starts to occur, but with this level of characteristic shift, the TFT substrate should be annealed at 150 ° C or higher for about 1 hour after spraying. As a result, the TFT characteristics are restored.

In the first aspect of the present invention, after spraying the spacer, the TFT substrate can be annealed at a temperature of 150 ° C. or more to compensate for the TFT characteristics. More preferably, annealing is performed at about 20 ° C.

In the first aspect of the present invention, it is not necessary to add a special process to the above annealing step. In the first aspect of the present invention, similarly to the method of manufacturing a normal liquid crystal display device, after spraying the spacer, the two substrates are bonded together to cure the sealant. It is annealed automatically for firing for about an hour.

In the first aspect of the present invention, a TFT substrate on which a sensor is selectively arranged as described above and a CF substrate are bonded and adhered with a sealant, and a liquid crystal is filled in a gap between the substrates to form a liquid crystal display. The device is manufactured.

Since the first aspect of the present invention has the above-described configuration, it is possible to provide a liquid crystal display device having high-quality display characteristics without a decrease in brightness or contrast due to a speaker. The liquid crystal display device manufactured according to the first aspect of the present invention is also one aspect of the present invention.

The second invention is a liquid crystal display device in which a TFT substrate and a color filter substrate are bonded together with a spacer and a sealant interposed therebetween, and a liquid crystal is injected into a gap therebetween. The spacer is selectively disposed on a gate bus line formed on a TFT substrate by using an electric attractive force and Z or a repulsive force, and the line width of the gate bus line is This is a liquid crystal display device with an average particle diameter of three times or more.

In order to increase the brightness of the liquid crystal display device, it is necessary to arrange a pixel electrode on the insulating film formed on the gate bus line so that the pixel electrode covers the gate bus line, so that the display area is enlarged. There is. In this case, the width of the gate bus line that is not covered by the pixel electrode corresponds to the effective gate bus line width.

In the second aspect of the present invention, the width of the gate bus line that is not covered with the pixel electrode is 4 to 5 times the average particle diameter of the spacer because the spacer is effectively selected and arranged on the gate bus line. Is preferred.

The second invention can be manufactured, for example, by using the first invention.

Hereinafter, embodiments of the present invention will be specifically described with reference to FIGS.

FIG. 1 is a conceptual diagram showing a sprinkler spray device used in the present invention. A nozzle 11 a for spraying the charged spacer 8 is provided at the upper end of the container 10. An apparatus 11 b for supplying a spacer 8 is connected to the spray nozzle 11 a via a spray pipe 17. Below the container 10, a TFT substrate 2 on which a gate bus line, a source bus line, and a Cs common bus line are formed is provided. The probe pins 16a, 16b, and 16c are individually contacted with the gate bus line, source bus line, and Cs common bus line of the TFT substrate 2, respectively. A voltage is applied to the TFT substrate 2 and the charged spacers 8 are sprayed on the TFT substrate 2 to select the spacers 8 on the gate bus line using electric attraction and electric or repulsion. Place

In the present invention, the method of charging the base 8 is as follows: the spraying pipe 17 and the spraying nozzle 11a shown in FIG. 1 are made of stainless steel, Teflon, Nymouth or urethane resin. When the spreader 8 passes through the spraying pipe 17 and the spraying nozzle 11 a, the charge generated by friction is used.

As a method of spraying a spacer in the present invention, a charging gun method using corona discharge is not preferable. The potential of the spacer is too high, and the repulsion between the controllers is strong. Therefore, the arrangement on the game bus line is deteriorated.

FIG. 2 is a conceptual diagram showing a wiring structure of a TFT substrate which is not invented. As shown in FIG. 2, a gate contact pad 13b for applying a voltage to the gate bus line 13a, a source contact pad 14b for applying a voltage to the source bus line 14a, A C s dimon pad 15 b for applying a voltage to the C s common bus line 15 a is provided, and here the Pc-pins 16 a, 16 b, and 16 c shown in FIG. 1 are provided. Each is contacted. These contact pads may be provided at a plurality of points on one TFT substrate in order to facilitate wiring or to reduce wiring resistance, and may be combined at one point. Yeah.

FIG. 3 is a conceptual diagram for explaining the effective gate bus line width in the invention. As shown in Hi 3, depending on the configuration of the TFT substrate, in order to increase the brightness of the completed liquid crystal display device, the pixel electrode 3 is formed on the insulating film 20 formed on the gate bus line 13a. The gate bus line 13a is disposed so as to cover the gate bus line 13a to make the display area large. In this case, the gap 19 between the pixel electrodes corresponds to the effective line width of the gate bus line. In the present invention, the effective width of the gate bus line is at least three times the average particle diameter of the spacer in order to effectively select and place the spacer on the gate bus line. Is preferred. BEST MODE FOR CARRYING OUT THE INVENTION

Hereinafter, the present invention will be described in more detail by way of examples, but the present invention is not limited to these examples. Example 1

Gate bus lines were formed and patterned on a transparent glass substrate, and then a gate insulating film was formed. Furthermore, the TFT electrode was formed by performing film formation and patterning operations on the pixel electrode, the source bus line, and the Cs common bus line, respectively.

The electrode pattern of the TFT substrate was formed as shown in Fig. 2, and the line width of the gate bus line was about 20 m. A common electrode substrate for a TFT type liquid crystal display was prepared as a CF substrate. These two substrates were subjected to an orientation treatment. As a spacer, A thermoplastic spacer having an average particle size of about 5 βm was prepared.

As a drying step of the substrate before spraying with the heater, the prepared TFT substrate was adhered to a hot plate heated to 120 ° C. for 10 minutes. After the drying process, the substrate surface resistance of the TFT substrate was 1 × 10 "ΩΖ in sheet resistance. Immediately after the drying process, the TFT substrate was set on the spraying device shown in FIG. As a result, a positive voltage was applied to the gate bus line on the TFT substrate, the source bus line and the Cs common bus line were grounded, and the spacer was negatively charged and sprayed. The potential difference between the source bus line and the Cs common bus line was 43 V.

The results of observing the TFT substrate on which the spacers were sprayed with an optical microscope are shown in FIG. Most spacers 8 were selectively arranged on the gate bus line 13a. The TFT substrate was subjected to a heat treatment, and the spacer was bonded and fixed. Next, using the TFT substrate and the CF substrate, a liquid crystal display device was manufactured through the steps of seal formation, bonding, substrate cutting, and liquid crystal injection. The obtained liquid crystal display has high contrast and good display characteristics because there is no light leakage due to the spacer.

Example 2

The operation was performed in the same manner as in Example 1 except that a negative voltage was applied to the source bus line and the Cs common bus line, and the gate bus line was grounded. At this time, the potential difference between the gate bus line on the substrate, the source bus line and the Cs common bus line was 39 V.

As a result of observing the TFT substrate on which the spacers were sprayed with an optical microscope, almost all the spacers were selectively arranged on the gate bus lines as in the first embodiment. Further, when a liquid crystal display device was manufactured using this TFT substrate in the same manner as in Example 1, the obtained liquid crystal display device had a high contrast and was free from light leakage due to the spacer. Display characteristics. Comparative Example 1 The operation was performed in the same manner as in Example 1 except that the step of drying the TFT substrate before spraying the spacer was omitted. The substrate surface resistance of the TFT substrate is 1Χ109 Ω ⁹ , and the potential difference between the gate bus line on the TFΤ substrate, the source bus line and the Cs common bus line is 8 V Met.

The results of observing the TF substrate on which the spacer was sprayed with an optical microscope are shown in FIG. Many sensors 8 were sprayed on the pixel electrodes 3. Further, a liquid crystal display device was manufactured using this FT substrate in the same manner as in Example 1. The manufactured liquid crystal display device was affected by the light leakage caused by the spacer. The contrast was inferior.

Test example 1

The drying step was omitted in Example 1, or the heating time in the drying step was 5 minutes, and the heating temperature was 80. C. A liquid crystal display device was manufactured in the same manner as in Example 1 except that the temperature was changed to 100 ° C. or 120 ° C.

Table 1 shows the relationship between the substrate heating temperature and the spraying rate of the spreader in this case. According to Table 1, when the TFT substrate is heated to 100 ° C or more, about 90% or more of the spacers are selectively arranged on the gate bus line. The display characteristics of the device were extremely good.

Industrial applicability

Since the present invention has the above-described configuration, in a liquid crystal display device using a TFT substrate, a spacer on a pixel electrode is eliminated or greatly reduced, and luminance due to the spacer is reduced. It is possible to provide a liquid crystal display device having high quality display characteristics without a decrease or a decrease in nintrast.

Claims

The scope of the claims

1. A method for manufacturing a TFT liquid crystal display device, comprising dispersing and disposing a spacer between a TF substrate and a color filter substrate, bonding them with a sealant, and injecting liquid crystal into the gap. A step of drying the TFT substrate on which the spacer is sprayed, and a step of selectively arranging the spacer on the gate bus line using electric attraction and Z or electric repulsion. The step of selectively arranging the spacer on the gate bus line using Z and Z or electric repulsion applies a voltage individually to each of the gate bus line and the source bus line formed on the TFT substrate, and applies the voltage thereto. A method for manufacturing a liquid crystal display device, comprising spraying a charged spacer.

2. The step of selectively arranging the spacer on the gate bus line by using the electric attraction and / or the electric repulsion is performed on the gate bus line, the source bus line and the Cs common bus line formed on the TFT substrate. 2. The method for manufacturing a liquid crystal display device according to claim 1, wherein a voltage is individually applied to each wiring, and a charged spacer is sprayed thereon.

3. The step of drying the TFT substrate on which the spacers are sprayed is performed by heating the substrate before spraying the spacers, raising the substrate temperature to 10 ° C or more, ^{3. The} method for manufacturing a liquid crystal display device according to claim 1, wherein the surface resistance is 1 ^× 10 10 ^Ω2 Ω or more in sheet resistance.

4. The first, second or third aspect of the present invention, wherein the spraying of the spacer is performed at a substrate surface resistance of the dried TF substrate at a sheet resistance of 1 X 10 "Ω or more. The manufacturing method of the liquid crystal display device described in the item.

5-The step of selectively arranging the sensor on the gate bus line by using the electric attraction includes applying a negative voltage to the gate bus line when the sprayer is positively charged, and Ground the source bus line and C s common bus line and spray them. Claims 1, 2, 3, or 3 characterized in that when the power supply is negatively charged, a positive voltage is applied to the gate bus line and the source bus line and the Cs common bus line are grounded. 5. The method for manufacturing a liquid crystal display device according to item 4. 6. The step of selectively arranging the spacer on the gate bus line by using electric repulsion is performed by applying a positive voltage to the source bus line and the C s common bus line when the spreader is positively charged. When the spreader is negatively charged, a negative voltage is applied to the source bus line and the Cs common bus line, and the gate bus line is grounded. 5. The method for manufacturing a liquid crystal display device according to claim 1, 2, 3, or 4, wherein:

7. The step of selectively arranging spacers on the gate bus line by using electric attraction and electric repulsion is performed when the spreader is positively charged, when the source bus line and the C s common bus line are used. When a positive voltage is applied to the gate bus line and a negative voltage is applied to the gate bus line, and the spreader is negatively charged, a negative voltage is applied to the source bus line and the C s common bus line, and 5. The method for manufacturing a liquid crystal display device according to claim 1, wherein a positive voltage is applied to the liquid crystal display device. 8. For a TFT substrate having a structure in which the Cs common bus line is common to the gate bus line, a voltage is applied only to the gate bus line and the source bus line. 8. The method for manufacturing a liquid crystal display device according to 2, 3, 4, 5, 6, or 7. 9. The voltage applied to the gate bus line, the source bus line, and the Cs common bus line is such that the potential difference between the gate bus line, the source bus line, and the Cs common bus line is 30 to 60 V. 9. The method for manufacturing a liquid crystal display device according to claim 1, 2, 3, 4, 5, 6, 7, or 8.

10. The charged amount of the spacer to be sprayed is +15 to 10 250 μCZg or 1 15 to −250 μCZg. Claims 1, 2, 3, and 4 , Five,

6,

10. The method for manufacturing a liquid crystal display device according to 7, 8, or 9. 1 1. The spacer is a thermoplastic adhesive spacer or a photo-curing adhesive spacer. After being selectively arranged on the gate bus line, it is adhesively fixed by heating or light irradiation. The method for manufacturing a liquid crystal display device according to claim 1, 2, 3, 4, 5, 6, 7, 8, 9, or 10. 1 2. The first, second, third, fourth, fifth, sixth, seventh, eighth, ninth, and ninth, wherein the line width of the gate bus line is at least three times the average particle diameter of the spacer. 12. The method for manufacturing a liquid crystal display device according to any one of items 10 to 11.

1 3. After spraying the spacer, the TFT substrate is annealed at a temperature of 150 ° C. or more to compensate for the TFT characteristics. 6, 7,

8,

9,

13. The method for manufacturing a liquid crystal display device according to item 10, 10, 11, or 12.

1 4. Claims 1, 2, 3, 4, 5, 6, 7, 8, 9, 10

11. A liquid crystal display device manufactured by the method for manufacturing a liquid crystal display device according to item 1, 12, or 13.

1 5. A liquid crystal display device in which a TFT substrate and a color filter substrate are bonded together with a spacer and a sealant interposed therebetween, and a liquid crystal is injected into a gap between the substrates. The gate bus lines formed on the substrate are selectively arranged using electrical attraction and Z or repulsion, and the line width of the gate bus lines is defined as an average particle size of the spacer. A liquid crystal display device characterized by being three times or more.

16. The liquid crystal display device according to claim 15, wherein the width of the gate bus line not covered by the pixel electrode is 4 to 5 times the average particle diameter of the spacer.