WO2001024585A1 - Large el panel and production method therefor - Google Patents
Large el panel and production method therefor Download PDFInfo
- Publication number
- WO2001024585A1 WO2001024585A1 PCT/JP2000/006622 JP0006622W WO0124585A1 WO 2001024585 A1 WO2001024585 A1 WO 2001024585A1 JP 0006622 W JP0006622 W JP 0006622W WO 0124585 A1 WO0124585 A1 WO 0124585A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- layer
- display
- tft
- adjacent
- circuit portion
- Prior art date
Links
- 238000004519 manufacturing process Methods 0.000 title claims description 15
- 239000011159 matrix material Substances 0.000 claims abstract description 15
- 239000010410 layer Substances 0.000 claims description 102
- 238000000034 method Methods 0.000 claims description 12
- 239000000126 substance Substances 0.000 claims description 10
- 239000012790 adhesive layer Substances 0.000 claims description 9
- 238000005452 bending Methods 0.000 claims description 4
- 230000002093 peripheral effect Effects 0.000 abstract description 4
- 230000015572 biosynthetic process Effects 0.000 description 7
- 239000004973 liquid crystal related substance Substances 0.000 description 3
- 239000003086 colorant Substances 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 2
- 229920005591 polysilicon Polymers 0.000 description 2
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 238000009125 cardiac resynchronization therapy Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000020169 heat generation Effects 0.000 description 1
- 230000005525 hole transport Effects 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 239000011229 interlayer Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 230000004043 responsiveness Effects 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
Classifications
-
- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09F—DISPLAYING; ADVERTISING; SIGNS; LABELS OR NAME-PLATES; SEALS
- G09F9/00—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements
- G09F9/30—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements in which the desired character or characters are formed by combining individual elements
- G09F9/313—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements in which the desired character or characters are formed by combining individual elements being gas discharge devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/18—Tiled displays
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B33/00—Electroluminescent light sources
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
Definitions
- the present invention relates to an EL large-sized panel formed by arranging EL display elements such as an organic EL panel in a matrix and a method of manufacturing the same.
- a small EL flat panel (EL display) driven by polysilicon TFT is usually supported on a hard transparent base and adhered with an adhesive or the like in order to maintain its flatness.
- a flat image can be displayed by controlling the driving of the EL display body for each pixel by TFT.
- the EL display generally has a diagonal of a few (2 to 6) inches, and exhibits excellent functions as a small-sized image display device.
- liquid crystal display panels have been increasingly used in place of CRTs as television monitors or personal computer monitors.
- the size of the liquid crystal display panel screen is beginning to be increased.
- an EL display driven by a TFT (hereinafter referred to as a TFT-EL display) is used.
- a TFT-EL display According to this TFT-EL display, a backlight is not required, and a high-resolution image can be displayed by increasing the number of pixels and improving responsiveness by the TFT. .
- TFT-EL display device there is no large-sized display device, and therefore, a small-sized (diagonal of several inches) TFT-EL display device is arranged in a matrix to form a large-sized (20 to 100 mm diagonal) display. It is necessary to form a display panel of about 100 inches).
- An object of the present invention is to provide a large-sized EL display panel capable of maintaining a pixel pitch of a pixel portion of a TFT when a plurality of EL displays are arranged in a matrix in consideration of the above facts, and a method of manufacturing the same. It is. Disclosure of the invention
- the present invention provides a fluorescent material, comprising: applying a predetermined voltage between a base layer coated with a fluorescent substance, a conductive electrode layer superposed on a negative surface of the base layer, and the electrode layer.
- a circuit portion for controlling light emission of the base layer, and the base layer being divided on the other surface of the base layer to generate a potential difference between the electrode layer and each of the divided regions independently for each divided region;
- a plurality of EL (Electro-Luminescent) display elements formed of a TFT (Thin-Film-Transistor) layer having a plurality of pixel portions capable of controlling the emission of the fluorescent substance of the layer, and a plurality of EL display elements are provided.
- a large EL panel formed by being arranged in a matrix on a main transparent base that can be held, and a TFT outside the actual light emitting area such that the actual light emitting area of the EL display is adjacent at a predetermined interval.
- the circuit portion of the layer is retracted to the back side of the adjacent EL display
- An EL large panel which is characterized.
- the manufacturing method includes: an EL display using the EL display, comprising: the EL display; a sub-transparent base that is attached to the TFT layer side and supports the EL display in a planar manner.
- a method of manufacturing a panel wherein the EL display is peeled off from the sub-transparent base, and the actual light-emitting areas of the plurality of EL displays are formed on a main transparent base larger than the sub-transparent base. adjacent
- a circuit portion of the TFT layer that is arranged in a matrix and is outside the actual light emitting region is retracted and fixed to the back side of the adjacent EL display.
- the EL display body can be transferred to another base by mechanically or chemically applying a force to the adhesive layer that bonds the EL display body and the sub-transparent base to each other.
- the TFT layer has a pixel portion and a circuit portion, and the pixel portion naturally overlaps with the actual light emitting surface of the EL display, so there is no problem.
- the circuit portion is located on the outer periphery (usually two sides) outside the actual light emitting area of the EL display circuit, so the presence of this circuit portion limits the approach of the EL display body, The high resolution of TFT could not be fully demonstrated.
- this circuit section is retracted to the back side of the adjacent EL display, the distance between the adjacent EL displays can be further reduced, and a large-sized high-resolution EL display panel can be obtained. Can be configured.
- the procedure for manufacturing this large EL panel is as follows.
- the EL display is peeled off from the sub-transparent base by using the peeling and transfer technology described above, and a plurality of EL display bodies are mounted on a main transparent base larger than the sub-transparent base.
- the light emitting areas are arranged in a matrix so that they are adjacent to each other, and the circuit portion of the TFT layer outside the actual light emitting area is retracted to the back side of the adjacent EL display and fixed.
- the present invention is a large-sized EL panel in which the EL display has a diagonal of a few inches and the main transparent base has a diagonal of 20 to 100 inches.
- the present invention is the EL large-sized panel in which a predetermined interval between the EL displays substantially coincides with an interval between pixels set in a pixel portion of the TFT layer.
- the boundary between the pixel portion and the circuit portion may be bent and arranged on the back side of the adjacent EL display.
- the circuit portion of the TFT layer may be retracted by providing a step in the thickness direction between the adjacent EL displays.
- the plurality of base layers may be flush with each other by adjusting the thickness of the TFT layer by inverting the adjacent EL display body.
- FIG. 1 is a front view of a large EL panel according to the present embodiment.
- FIG. 2 is a partially enlarged view of FIG.
- FIG. 3 is a cross-sectional view of the EL display.
- FIG. 4 is a cross-sectional view when the EL display body and the sub-transparent base are separated.
- FIG. 5 is a cross-sectional view when the EL display is disposed adjacent to the main transparent base.
- FIG. 6 is a perspective view showing an image of an overlapping state of the circuit units of the TFT layer.
- FIG. 7 is a front view when the EL display is disposed adjacent to the main transparent base.
- FIG. 8 is a detailed cross-sectional view when the EL display body is arranged adjacent to the main transparent base.
- FIG. 9 is a cross-sectional view of an EL large-size panel showing a retreat structure of a circuit portion of a TFT layer according to a second embodiment of the present invention.
- FIG. 10 is a cross-sectional view of a large-sized EL panel showing a retreat structure of a circuit portion of a TFT layer according to a third embodiment of the present invention.
- FIG. 11 is a front view of a circuit portion of the TFT layer according to the fourth embodiment of the present invention.
- FIG. 12 is a front view of a circuit portion of a TFT layer according to a fifth embodiment of the present invention.
- FIG. 13 is a manufacturing process diagram of the EL panel. BEST MODE FOR CARRYING OUT THE INVENTION
- FIG. 1 shows a large-sized EL display panel 10 according to the present embodiment.
- the EL displays 14A, 14B, 14C, and 14D have the same structure, the EL displays 14 are collectively referred to below.
- the EL display 14 is driven by a polysilicon TFT. It is divided into a plurality of pixels, and light emission control (including P-tone) can be performed for each divided pixel.
- the size of the single EL display 14 is limited, and the diagonal is a few (2 to 6) inches. For this reason, in order to form a screen having a size of about ten to several inches to about 100 inches, the EL displays 14 are arranged and arranged in a matrix.
- FIG. 1 an image having a diagonal of about 20 inches (about A3 in the JIS standard) is formed by the four EL displays 14.
- FIG. 3 shows a cross-sectional structure of the EL display 14.
- the EL display 14 applied in the present embodiment is initially assembled as a product (EL panel 16), and is attached on a sub-transparent base 18 via an adhesive layer 20.
- the EL panel 16 alone is held on the sub-transparent base 18 so as to hold the EL display body 14 in a plane, and in this embodiment, as shown in FIG. As a boundary, the sub-transparent base 16 and the EL display 14 are separated. For this separation, a peeling / transferring technique is used, so that only the EL display 14 can be surely peeled off.
- the EL display 14 is configured by stacking a plurality of layers.
- the lowermost layer of the EL display 14 is a TFT layer 22.
- the TFT layer 22 includes a pixel section 22
- the pixel section 22P is a group of pixels that are divided in a matrix and that can independently control the emission of a fluorescent substance described later.
- the circuit section 22C is a driver for controlling the light emission of this pixel.
- a base layer 24 coated with a fluorescent material is overlapped on the area surface of the pixel portion 22P of the TFT layer 22.
- a transparent electrode layer 26 including the circuit portion 22C of the TFT layer 22 is provided from above the base layer 24. This transparent electrode layer 26 also has a role as a protective film.
- a current is supplied to a predetermined pixel, which is controlled by the circuit portion 22C of the TFT layer 22, a potential difference is generated between the TFT layer 22 and the transparent electrode layer 26, and the base sandwiched in this portion is formed.
- the structure is such that the fluorescent substance in the layer 24 emits light.
- three emission colors are used. These pixels form a set and can be obtained as RGB colors, respectively, enabling the display of a single color image.
- the circuit portion 22C of the TFT layer 22 interferes.
- a large gap (gap) occurs between the pixels at the peripheral ends of two adjacent EL display panels 14. Therefore, in this embodiment, as shown in FIGS. 5 to 7, folding the T FT layer 22 at the boundary between the circuit portion 22 C and the pixel portion 22 P Ding 1 1 layer 22, the adjacent EL display 14 It is structured to retract to the back side. Thereby, the pixels at the peripheral end can be brought close to each other.
- the pitch between pixels at the boundary between adjacent EL displays 14 can be 10 ⁇ m.
- the pixel pitch is 50 ⁇ m
- the thickness of the TFT layer is 1 ⁇ m
- the thickness of the EL display 14 is 5 m.
- a plurality of EL panels 16 are prepared to have a desired diagonal inch size.
- four EL panels 16 are prepared.
- Each of the EL panels 16 is bonded to a necessary transparent EL display 14 and a sub-transparent base 18 with an adhesive layer 20.
- the EL display body 14 is peeled off from the adhesive layer 20 by the peeling / transferring technique described above.
- the stripped EL displays 14 are arranged in a matrix (2 ⁇ 2) on the main transparent base 12.
- the circuit portion 22C of the TFT layer 22 interferes with another EL display 14 arranged adjacently. For this reason, the TFT is bent at the boundary between the circuit section 22 C of the TFT layer 22 and the pixel section 22 P, and the circuit section 22 C is retracted to the rear side of the adjacent EL display 14.
- the four EL display members 14 are attached by the adhesive layer 28.
- the feature of the second embodiment resides in the retraction of the circuit section 22 C of the TFT layer 22.
- the circuit section 22 C of the TFT layer 22 and the pixel section 22 P No bends were made at the border with
- an adhesive layer 28 for superimposing and fixing the EL display body 14 on the main transparent base 12 is arranged between the adjacent EL display body 14 in the thickness direction.
- the step 30 is provided.
- the step portion 30 corresponds to the thickness of the TFT layer 22 and the base layer 24 superimposed on each other. As a result, the circuit portion 22 C of the TFT layer 22 is bent without bending. It can be placed on the back of the EL display 14 in contact.
- the feature of the third embodiment resides in the retraction of the circuit section 22 C of the TFT layer 22.
- the circuit section 22 C of the TFT layer 22 and the pixel section 22 P No bends were made at the border with
- the first layer attached to the main transparent base 12 via an adhesive layer is a transparent electrode layer 26.
- the second layer is referred to as a base layer 24, and the third layer is referred to as a TFT layer 22. That is, the main transparent base 12 is superimposed on and adhered to the main transparent base 12 in a direction opposite to the first and second embodiments. Also, at this time, the pixel portion 22P of the TFT layer 22 is twice as thick as the pixel portion 22P of the adjacent EL display member 14 which is a normal thickness.
- the circuit section 22C can be arranged on the back side of the adjacent EL display body 14 without being bent at the boundary with the pixel section 22P.
- FIG. 11 shows a first example of the arrangement for arranging four EL displays 14 adjacent to each other.
- the same four EL displays 14 are used, and the left and right EL displays 14 are used.
- the vertical direction is reversed between the EL display units 14. Thereby, it is possible to prevent the circuit portion 22C of the TFT layer 22 from overlapping the adjacent EL display 14.
- FIG. 12 shows a second modified example.
- the left and right EL displays 14 have slightly different configurations. That is, the position of the circuit portion 22 C of the TFT layer 22 is symmetrical between the two left and right EL display members 14. The circuit portion 22C of the layer 22 does not interfere with the adjacent EL display 14.
- the outline of the manufacturing process of the EL panel 16 is shown in FIG. 13 for the actual manufacturing process of the EL panel 16 which is the basis of the large EL panel 10. That is, the EL panel 14 is formed through the steps described in order from the top in FIG. The process order is as follows: TFT element formation—interlayer insulation film formation Contact hole formation Transparent electrode layer formation ⁇ Nink formation Hole transport layer formation ⁇ EL layer formation ⁇ Electrode layer formation.
- the large EL panel and the method of manufacturing the EL panel according to the present invention have an excellent effect that the pixel pitch of the pixel portion of the TFT can be maintained when a plurality of EL displays are arranged in a matrix. Having.
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- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Theoretical Computer Science (AREA)
- Electroluminescent Light Sources (AREA)
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
Description
Claims
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
EP00961233A EP1143772A4 (en) | 1999-09-30 | 2000-09-26 | Large EL display and its manufacture |
US09/856,852 US6642542B1 (en) | 1999-09-30 | 2000-09-26 | Large EL panel and manufacturing method therefor |
KR10-2001-7006736A KR100398542B1 (ko) | 1999-09-30 | 2000-09-26 | 대형 전자 발광 패널 및 그 제조 방법 |
US10/617,746 US6967114B2 (en) | 1999-09-30 | 2003-07-14 | Large EL panel and manufacturing method therefor |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP28084399A JP4009923B2 (ja) | 1999-09-30 | 1999-09-30 | Elパネル |
JP11/280843 | 1999-09-30 |
Related Child Applications (3)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US09/856,852 A-371-Of-International US6642542B1 (en) | 1999-09-30 | 2000-09-26 | Large EL panel and manufacturing method therefor |
US09856852 A-371-Of-International | 2000-09-26 | ||
US10/617,746 Division US6967114B2 (en) | 1999-09-30 | 2003-07-14 | Large EL panel and manufacturing method therefor |
Publications (1)
Publication Number | Publication Date |
---|---|
WO2001024585A1 true WO2001024585A1 (en) | 2001-04-05 |
Family
ID=17630766
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/JP2000/006622 WO2001024585A1 (en) | 1999-09-30 | 2000-09-26 | Large el panel and production method therefor |
Country Status (7)
Country | Link |
---|---|
US (2) | US6642542B1 (ja) |
EP (1) | EP1143772A4 (ja) |
JP (1) | JP4009923B2 (ja) |
KR (1) | KR100398542B1 (ja) |
CN (1) | CN100340137C (ja) |
TW (1) | TW474118B (ja) |
WO (1) | WO2001024585A1 (ja) |
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- 2000-09-26 CN CNB008032645A patent/CN100340137C/zh not_active Expired - Fee Related
- 2000-09-26 WO PCT/JP2000/006622 patent/WO2001024585A1/ja active IP Right Grant
- 2000-09-26 KR KR10-2001-7006736A patent/KR100398542B1/ko not_active IP Right Cessation
- 2000-09-26 EP EP00961233A patent/EP1143772A4/en not_active Withdrawn
- 2000-09-27 TW TW089119913A patent/TW474118B/zh not_active IP Right Cessation
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Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US9854629B2 (en) | 2014-08-08 | 2017-12-26 | Semiconductor Energy Laboratory Co., Ltd. | Display device |
US9768201B2 (en) | 2015-09-08 | 2017-09-19 | Semiconductor Energy Laboratory Co., Ltd. | Display device and electronic device |
US10312264B2 (en) | 2015-09-08 | 2019-06-04 | Semiconductor Energy Laboratory Co., Ltd. | Display device and electronic device |
Also Published As
Publication number | Publication date |
---|---|
CN1339240A (zh) | 2002-03-06 |
KR20010080628A (ko) | 2001-08-22 |
KR100398542B1 (ko) | 2003-09-19 |
US6967114B2 (en) | 2005-11-22 |
TW474118B (en) | 2002-01-21 |
JP4009923B2 (ja) | 2007-11-21 |
EP1143772A1 (en) | 2001-10-10 |
JP2001100662A (ja) | 2001-04-13 |
US6642542B1 (en) | 2003-11-04 |
EP1143772A4 (en) | 2006-03-29 |
CN100340137C (zh) | 2007-09-26 |
US20040014252A1 (en) | 2004-01-22 |
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