WO1999000538A1 - Sic monocristallin et procede de preparation associe - Google Patents
Sic monocristallin et procede de preparation associe Download PDFInfo
- Publication number
- WO1999000538A1 WO1999000538A1 PCT/JP1998/002798 JP9802798W WO9900538A1 WO 1999000538 A1 WO1999000538 A1 WO 1999000538A1 JP 9802798 W JP9802798 W JP 9802798W WO 9900538 A1 WO9900538 A1 WO 9900538A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- single crystal
- sic
- plate
- composite
- crystal
- Prior art date
Links
- 239000013078 crystal Substances 0.000 title claims abstract description 180
- 238000004519 manufacturing process Methods 0.000 title claims description 25
- 229910010271 silicon carbide Inorganic materials 0.000 claims abstract description 104
- 239000000758 substrate Substances 0.000 claims abstract description 40
- 239000002131 composite material Substances 0.000 claims abstract description 32
- 229910021431 alpha silicon carbide Inorganic materials 0.000 claims abstract description 15
- 238000000034 method Methods 0.000 claims abstract description 15
- 238000010438 heat treatment Methods 0.000 claims description 34
- 239000000463 material Substances 0.000 claims description 34
- 238000010030 laminating Methods 0.000 claims description 11
- 125000004432 carbon atom Chemical group C* 0.000 claims description 9
- 125000004429 atom Chemical group 0.000 claims description 8
- 229920006395 saturated elastomer Polymers 0.000 claims description 8
- 238000007740 vapor deposition Methods 0.000 claims description 7
- 229910052710 silicon Inorganic materials 0.000 claims description 6
- 229910021421 monocrystalline silicon Inorganic materials 0.000 claims description 5
- 238000009499 grossing Methods 0.000 claims 2
- 230000007547 defect Effects 0.000 abstract description 20
- 239000012535 impurity Substances 0.000 abstract description 7
- 238000002230 thermal chemical vapour deposition Methods 0.000 abstract description 6
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 56
- 239000004065 semiconductor Substances 0.000 description 13
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 5
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 238000005229 chemical vapour deposition Methods 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 230000007613 environmental effect Effects 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 239000012467 final product Substances 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 239000000047 product Substances 0.000 description 2
- 238000001953 recrystallisation Methods 0.000 description 2
- 239000007790 solid phase Substances 0.000 description 2
- 238000000859 sublimation Methods 0.000 description 2
- 230000008022 sublimation Effects 0.000 description 2
- 238000000815 Acheson method Methods 0.000 description 1
- 229910018540 Si C Inorganic materials 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 238000000354 decomposition reaction Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 239000012071 phase Substances 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 238000005092 sublimation method Methods 0.000 description 1
- 230000009466 transformation Effects 0.000 description 1
- 238000011282 treatment Methods 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B1/00—Single-crystal growth directly from the solid state
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/36—Carbides
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure
- C30B33/02—Heat treatment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/20—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy
Definitions
- the present invention relates to a single crystal SiC and a method for producing the same, and more particularly, to a high-temperature semiconductor electronic device such as a light emitting diode X-ray optical device, a switching device, an amplifying device, and an optical sensor.
- the present invention relates to a single crystal SiC used as a substrate wafer or the like and a method for producing the same. Background art
- SiC silicon carbide
- Si silicon carbide
- GaAs gallium arsenide
- SiC silicon carbide
- the conventional manufacturing methods described above not only have a very low crystal growth rate of 1 t / m / hr. In the case of the sublimation recrystallization method, they are called micropipe defects and produce semiconductor devices. There is a problem-causing pinholes having a diameter of several Mi click Ron penetrating in the crystal growth direction of the leakage current of when the is present in 1 0 0 ⁇ 1 0 0 0 Z cm 2 about the grown crystal, the As described above, although it has many excellent features compared to existing semiconductor materials such as Si and GaAs, it is a factor that hinders its practical use.
- the substrate temperature is as high as 1700 to 1900 ° C, and a high-purity reducing atmosphere is required.
- the disclosure of 0 invention there is a problem that there is a limit to the growth rate for Epitakishi catcher Le growth
- the present invention has been made in view of the background of the prior art as described above, and has such a high-quality and large-size single crystal Si having very high quality and very few micropipe defects.
- a single crystal SiC that can be manufactured easily and with high productivity both in terms of equipment and workability, and which can promote the practical use as a semiconductor material. It is intended to provide.
- the single crystal S i C according to the first invention is a single crystal S i C
- the polycrystal of the polycrystal plate is transformed into a single crystal by heat-treating a composite formed by laminating a polycrystal plate composed of i atoms and C atoms via a smooth surface. It is characterized by
- power devices have superior high-temperature characteristics, high-frequency characteristics, withstand voltage characteristics, and environmental resistance characteristics compared to existing semiconductor materials such as Si (silicon) and GaAs (gallium arsenide). This has the effect of enabling the practical use of single crystal SiC, which is expected as a semiconductor material for use.
- the single crystal SiC according to the present invention is obtained by laminating a plurality of SiC single crystal substrates arranged adjacent to each other with adjacent side surfaces in contact with each other and a polycrystalline plate composed of Si atoms and C atoms.
- the polycrystalline body of the polycrystalline plate is transformed into a single crystal by heat treating the composite.
- a method for producing a single crystal SiC according to the present invention, at least one surface of a polycrystalline plate composed of a SiC single crystal base material and Si and C atoms is smoothed, After laminating the SiC single crystal base material and the polycrystalline plate through these surfaces, the composite is subjected to heat treatment to transform the polycrystalline material of the polycrystalline plate into a single crystal and grow it. It is preferable.
- a multi-layer comprising a plurality of SiC single crystal substrates arranged adjacent to each other with adjacent side surfaces in contact with each other and Si atoms and C atoms. After laminating with the crystal plate, the composite can be heat-treated to transform the polycrystal of the polycrystal plate into a single crystal and grow it.
- an amorphous plate or a polycrystalline plate forming a complex is formed on a surface of a plurality of SiC single crystal substrates by a thermochemical vapor deposition method.
- 3—SiC polycrystalline plate set the thermochemical vapor deposition temperature of this amorphous plate or y8—SiC polycrystalline plate in the range of 130 ° C to 190 ° C.
- This also provides an effect that a high-purity, high-quality single crystal SiC with even less impurities and lattice defects can be obtained.
- FIG. 1 is a schematic diagram showing a state before heat treatment of single crystal SiC in the first embodiment of the present invention
- FIG. 2 is a heat treatment of single crystal SiC in the first embodiment of the present invention
- FIG. 3 is a schematic view showing a state after the heat treatment
- FIG. 3 shows the heat of the single crystal SiC in the second embodiment of the present invention
- FIG. 4 is a plan view showing a state before the treatment
- FIG. 4 is a schematic view showing a state before the heat treatment of the single crystal SiC in the third embodiment of the present invention
- FIG. 5 is a schematic bottom view of FIG.
- FIG. 6 is an enlarged view of a main part before heat treatment of single crystal Si C in the third embodiment of the present invention.
- FIG. 7 is a heat treatment of single crystal Si i in the third embodiment of the present invention after heat treatment.
- FIG. 8 is a schematic diagram showing a state before heat treatment of single crystal SiC in the fourth embodiment of the present invention.
- Fig. 1 schematically shows a composite M before heat treatment of SiC.
- 1 is a plate-like hexagonal system (6H type, 4H type) (a single SiC single crystal base material).
- this a-SiC single crystal substrate 1 is manufactured by sublimation method or Acheson method, and its surface 1a is polished smoothly.2 is in the range of 1300 to 1900 ° C Is a cubic system ⁇ -SiC polycrystalline plate separately manufactured by a thermochemical vapor deposition method (hereinafter, referred to as a thermal CVD method), and its one surface 2a is polished smoothly.
- a thermal CVD method thermochemical vapor deposition method
- the whole of the above-mentioned complex M is brought to an atmosphere having a temperature of 180 ° C. or more, preferably 220 ° C. to 240 ° C., and an S i C saturated vapor pressure.
- Heat treatment such as holding for about 8 hours
- the yS—S i C polycrystalline plate 2 is transformed into a single crystal, and as shown in FIG. 2, the polycrystalline form of the yS_S i C polycrystalline plate 2
- the single crystal portion 2 ′ is oriented in the same direction as the crystal axis of the iC single crystal substrate 1, and this single crystal portion 2 ′ is integrated with the single crystal of the SiC single crystal substrate 1. Large single crystals are grown.
- the interface 3 that clearly appeared before the heat treatment was fused and integrated, and disappeared.
- a composite M composed of a — S i C single crystal base material 1 and / 8 _ S i C polycrystalline plate 2 adhered via the smooth polished surfaces 1 a and 2 a
- lattice vibration occurs at the interface 3 and the interatomic arrangement is changed, causing crystal growth mainly by solid phase growth, which does not include micropipe defects at all. Almost no lattice defects (10 or less per cm 2 )
- High-quality single crystal SiC can be manufactured with high productivity.
- polishing or cutting off the ⁇ -SiC single crystal base material 1 used for the phase transformation to the ⁇ -type crystal in the SiC polycrystalline plate 2 a high-quality wafer for electronic devices can be obtained. it can.
- a second embodiment will be described.
- a plurality of ⁇ — S i C single crystal substrates 1... whose surfaces are polished smoothly are combined with the side surfaces 1 b of adjacent ⁇ _ S i C single crystal substrates 1, 1... as shown in FIG. , 1 b ... are arranged in close contact with each other, and the ⁇ -S i C polycrystalline plate 2 is placed on the polished surface of the plurality of ⁇ -S i C single crystal substrates 1.
- the composite After laminating so that the polished surfaces are in close contact with each other, the composite is heated to a temperature of at least 180 ° C., preferably at a temperature of 220 to 240 ° C., as described above, and The heat treatment can be performed when it is held for about 8 hours in an atmosphere of S i C saturated vapor pressure.
- the 3-SiC polycrystalline plate 2 is transformed into a single crystal, and the single crystals oriented in the same direction as the crystal axes of the plurality of ⁇ -SiC single-crystal substrates 1 are integrally formed.
- the close side surfaces 1b of the adjacent ⁇ -SiC single-crystal substrates 1, 1 ... are fused and integrated, and a single-crystal SiC with a large area is obtained by repeating such processing.
- Fig. 4 is a schematic diagram showing the state of the single crystal S i C before heat treatment
- Fig. 5 is a schematic bottom view of the single crystal S i C.
- a plurality of hexagonal (6H type, 4H type) sheets are shown.
- the ⁇ -SiC single-crystal substrates 1 ... are arranged so that the adjacent side surfaces 1b, 1b- are in close contact with each other, and a plurality of the ⁇ -SiC single-crystal substrates 1 ...
- a cubic 8-SiC polycrystalline plate 2 is formed into a layer on the surface of the substrate by a thermal CVD method in a temperature range of 130 to 190 ° C.
- an ⁇ -SiC single crystal base including a lattice defect is shown.
- a polycrystal 4 composed of a plurality of; 8—S i C columnar single crystals aligned without gaps on the surface of material 1 is grown, and ⁇ -S i C single crystal bases are formed on crystal planes with different crystal morphologies.
- Composite M having interface 3 in contact with material 1 is formed.
- the entire complex M is heated to a temperature range of 190 to 240 ° C., preferably 200 to 220 ° C., and at a saturated vapor pressure of SiC.
- the adjacent ones of the plurality of ⁇ -SiC single-crystal substrates 1 are fused and integrated at the close side faces lb, 1b, and the above;
- the polycrystal 4 of the S i C plate 2 is transformed into a—S i C single crystal, and the above cr _ S i C single crystal is formed.
- the surface of a plurality of ⁇ -SiC single-crystal substrates 1, which are closely aligned with adjacent side surfaces, are formed on the surface of the 9- 1 SiC polycrystalline plate 2 by thermal CVD.
- the complex M, on which the body 4 has been grown to heat treatment, it is mainly made of solid phase growth, in which the area is very large and lattice vibration occurs at the interface 3 to change the arrangement of atoms.
- the cross-sectional etching photograph of FIG. 7 by a microscope there are almost no lattice defects and micropipe defects (less than 10 per cm). 1 'can be easily manufactured.
- a fourth embodiment a plurality of high-quality single crystals S i C 1 ′ manufactured as described in the third embodiment are reused as a single S i C single crystal base material. is there. That is, as shown in FIG. 8, a plurality of the single crystals S i C 1 ′ are arranged and arranged so that adjacent side surfaces 1 ′ b, 1 ′ b... are close to each other.
- Single crystal S i C 1 '... A composite formed by forming a polycrystalline plate 2 with orientation and composed of cubic ⁇ -S i C single crystals arranged on the entire surface by thermal CVD without any gaps After forming M ′, the entire complex M ′ was heated at 900 ° C.
- the a-SiC single-crystal base material 1 was used as the SiC single-crystal base material.
- S i C single crystal may be used, and in each of the above embodiments, a 3-Si C crystal plate 2 is used as a polycrystalline plate composed of S i atoms and C atoms.
- an ⁇ - SiC polycrystalline plate for example, an ⁇ - SiC polycrystalline plate, a high-purity SIC sintered body, or an amorphous plate having a high purity (10 14 atm / cm 3 ) or less may be used. It is possible to obtain the same high-quality single crystal SiC as in each of the above embodiments.
- ⁇ -SiC single crystal base material 1 in each of the above embodiments either 6H type or 4H type may be used, and when 6H type is used, heat treatment is performed. Accordingly, a single crystal that is converted from the polycrystal of the 3-SiC polycrystalline plate 2 to ⁇ _SiC is easily grown in the same form as a 6H-type single crystal, and a 4H-type When the single crystal substrate 1 is used, a single crystal having the same form as the 4H-type single crystal is likely to be converted and grown with the heat treatment.
- the temperature condition for the heat treatment of the composite M may be in the range of 180 to 240 ° C., preferably in the range of 2000 to 220 ° C. I like it. If the heat treatment temperature is lower than 180 ° C., the kinetic energy of the atoms cannot be given to many SiC forming the interface. When the temperature exceeds 240 ° C., heat energy far exceeding the decomposition energy of SiC is supplied, and the SiC crystal itself is decomposed. Industrial applicability
- the present invention relates to a SiC single crystal substrate and a polycrystalline plate.
- a SiC single crystal substrate and a polycrystalline plate are laminated in close contact with each other via a smooth polished surface, or a polycrystalline plate is formed by thermal CVD on the surface of a plurality of SiC single-crystal substrates arranged side by side.
- the film composite is heat-treated to transform the polycrystal of the polycrystalline plate into a single crystal, and a single crystal oriented in the same direction as the crystal axis of the SiC single crystal substrate grows in a large size Technology that not only excels in heat resistance and mechanical strength, but also makes it easy and efficient to produce high-quality, large-sized single-crystal SiC with very few mic opening pipe defects and lattice defects. It is.
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Thermal Sciences (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Carbon And Carbon Compounds (AREA)
Description
Claims
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
EP98928638A EP0922792A4 (en) | 1997-06-27 | 1998-06-23 | SINGLE CRYSTAL SIC AND PROCESS FOR PREPARING THE SIC |
CA002263339A CA2263339C (en) | 1997-06-27 | 1998-06-23 | Single crystal sic and process for preparing the same |
US09/147,621 US6153166A (en) | 1997-06-27 | 1998-06-23 | Single crystal SIC and a method of producing the same |
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP9/172017 | 1997-06-27 | ||
JP17201797A JP3254557B2 (ja) | 1997-06-27 | 1997-06-27 | 単結晶SiCおよびその製造方法 |
JP21541497A JP3254559B2 (ja) | 1997-07-04 | 1997-07-04 | 単結晶SiCおよびその製造方法 |
JP9/215414 | 1997-07-04 |
Publications (1)
Publication Number | Publication Date |
---|---|
WO1999000538A1 true WO1999000538A1 (fr) | 1999-01-07 |
Family
ID=26494525
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/JP1998/002798 WO1999000538A1 (fr) | 1997-06-27 | 1998-06-23 | Sic monocristallin et procede de preparation associe |
Country Status (7)
Country | Link |
---|---|
US (1) | US6153166A (ja) |
EP (1) | EP0922792A4 (ja) |
KR (1) | KR100287792B1 (ja) |
CN (1) | CN1231003A (ja) |
CA (1) | CA2263339C (ja) |
RU (1) | RU2160329C1 (ja) |
WO (1) | WO1999000538A1 (ja) |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0967304A1 (en) * | 1998-05-29 | 1999-12-29 | Kabushiki Kaisha Toyota Chuo Kenkyusho | Method for manufacturing single crystal of silicon carbide |
US6855202B2 (en) | 2001-11-30 | 2005-02-15 | The Regents Of The University Of California | Shaped nanocrystal particles and methods for making the same |
WO2010131569A1 (ja) * | 2009-05-11 | 2010-11-18 | 住友電気工業株式会社 | 半導体基板の製造方法 |
WO2017047478A1 (ja) * | 2015-09-14 | 2017-03-23 | 信越化学工業株式会社 | SiC複合基板及びその製造方法 |
RU213493U1 (ru) * | 2022-06-24 | 2022-09-14 | Федеральное государственное бюджетное образовательное учреждение высшего образования "Национальный исследовательский Московский государственный строительный университет" (НИУ МГСУ) | Конструкция усиленного растянутого металлического элемента |
Families Citing this family (29)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3296998B2 (ja) * | 1997-05-23 | 2002-07-02 | 日本ピラー工業株式会社 | 単結晶SiCおよびその製造方法 |
JP3003027B2 (ja) * | 1997-06-25 | 2000-01-24 | 日本ピラー工業株式会社 | 単結晶SiCおよびその製造方法 |
JP3248071B2 (ja) * | 1998-10-08 | 2002-01-21 | 日本ピラー工業株式会社 | 単結晶SiC |
US6436186B1 (en) * | 1999-07-30 | 2002-08-20 | Nissin Electric Co., Ltd. | Material for raising single crystal SiC and method of preparing single crystal SiC |
JP2001048649A (ja) * | 1999-07-30 | 2001-02-20 | Asahi Glass Co Ltd | 炭化ケイ素およびその製造方法 |
US6936102B1 (en) * | 1999-08-02 | 2005-08-30 | Tokyo Electron Limited | SiC material, semiconductor processing equipment and method of preparing SiC material therefor |
JP3087070B1 (ja) * | 1999-08-24 | 2000-09-11 | 日本ピラー工業株式会社 | 半導体デバイス製作用単結晶SiC複合素材及びその製造方法 |
JP4716558B2 (ja) | 2000-12-12 | 2011-07-06 | 株式会社デンソー | 炭化珪素基板 |
US6706114B2 (en) | 2001-05-21 | 2004-03-16 | Cree, Inc. | Methods of fabricating silicon carbide crystals |
TW583354B (en) * | 2001-05-25 | 2004-04-11 | Mitsui Shipbuilding Eng | Method for producing amorphous SiC wafer |
JP4848495B2 (ja) * | 2001-06-04 | 2011-12-28 | 学校法人関西学院 | 単結晶炭化ケイ素及びその製造方法 |
JP5415853B2 (ja) * | 2009-07-10 | 2014-02-12 | 東京エレクトロン株式会社 | 表面処理方法 |
US20120025208A1 (en) * | 2009-10-13 | 2012-02-02 | Sumitomo Electric Industries, Ltd. | Method for manufacturing silicon carbide substrate and silicon carbide substrate |
CN102449734A (zh) * | 2009-10-30 | 2012-05-09 | 住友电气工业株式会社 | 制造碳化硅衬底的方法和碳化硅衬底 |
CA2758266A1 (en) * | 2009-11-24 | 2011-06-03 | Sumitomo Electric Industries, Ltd. | Method of manufacturing semiconductor substrate |
US8435866B2 (en) | 2010-02-05 | 2013-05-07 | Sumitomo Electric Industries, Ltd. | Method for manufacturing silicon carbide substrate |
JP2011210864A (ja) * | 2010-03-29 | 2011-10-20 | Sumitomo Electric Ind Ltd | 半導体基板 |
JP2011243619A (ja) * | 2010-05-14 | 2011-12-01 | Sumitomo Electric Ind Ltd | 炭化珪素基板の製造方法、半導体装置の製造方法、炭化珪素基板および半導体装置 |
JP2011243771A (ja) * | 2010-05-19 | 2011-12-01 | Sumitomo Electric Ind Ltd | 炭化珪素基板の製造方法、半導体装置の製造方法、炭化珪素基板および半導体装置 |
JP2011246315A (ja) * | 2010-05-28 | 2011-12-08 | Sumitomo Electric Ind Ltd | 炭化珪素基板およびその製造方法 |
JP5447206B2 (ja) | 2010-06-15 | 2014-03-19 | 住友電気工業株式会社 | 炭化珪素単結晶の製造方法および炭化珪素基板 |
JP2012089639A (ja) * | 2010-10-19 | 2012-05-10 | Sumitomo Electric Ind Ltd | 単結晶炭化珪素基板を有する複合基板 |
JP2012201543A (ja) * | 2011-03-25 | 2012-10-22 | Sumitomo Electric Ind Ltd | 炭化珪素基板 |
KR102062381B1 (ko) | 2012-11-30 | 2020-01-03 | 서울바이오시스 주식회사 | 질화물 반도체층 성장 방법 및 질화물 반도체 소자 제조 방법 |
JP6515757B2 (ja) * | 2015-09-15 | 2019-05-22 | 信越化学工業株式会社 | SiC複合基板の製造方法 |
CN105525351A (zh) * | 2015-12-24 | 2016-04-27 | 中国科学院上海硅酸盐研究所 | 一种高效SiC晶体扩径方法 |
CN105679647B (zh) * | 2015-12-31 | 2018-06-29 | 清华大学 | 具有原子级平整表面的衬底的制备方法 |
JP2019151896A (ja) * | 2018-03-05 | 2019-09-12 | 日本特殊陶業株式会社 | SiC部材及びこれからなる基板保持部材並びにこれらの製造方法 |
CN110919465A (zh) * | 2019-11-08 | 2020-03-27 | 中国科学院上海硅酸盐研究所 | 无损伤、高平面度单晶碳化硅平面光学元件及其制备方法 |
Family Cites Families (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS58130517A (ja) * | 1982-01-29 | 1983-08-04 | Hitachi Ltd | 単結晶薄膜の製造方法 |
JPS5939711A (ja) * | 1982-08-26 | 1984-03-05 | Ushio Inc | ウエハ−上のアモルファスシリコンもしくは多結晶シリコンをエピタキシアル成長させる方法 |
US4590130A (en) * | 1984-03-26 | 1986-05-20 | General Electric Company | Solid state zone recrystallization of semiconductor material on an insulator |
JPH0770474B2 (ja) * | 1985-02-08 | 1995-07-31 | 株式会社東芝 | 化合物半導体装置の製造方法 |
JPH07101679B2 (ja) * | 1988-11-01 | 1995-11-01 | 三菱電機株式会社 | 電子デバイス用ウエハ,ウエハ用棒状基材および電子デバイス |
DE4234508C2 (de) * | 1992-10-13 | 1994-12-22 | Cs Halbleiter Solartech | Verfahren zur Herstellung eines Wafers mit einer monokristallinen Siliciumcarbidschicht |
JP3296998B2 (ja) * | 1997-05-23 | 2002-07-02 | 日本ピラー工業株式会社 | 単結晶SiCおよびその製造方法 |
JP3003027B2 (ja) * | 1997-06-25 | 2000-01-24 | 日本ピラー工業株式会社 | 単結晶SiCおよびその製造方法 |
JP3043689B2 (ja) * | 1997-11-17 | 2000-05-22 | 日本ピラー工業株式会社 | 単結晶SiC及びその製造方法 |
JP2884085B1 (ja) * | 1998-04-13 | 1999-04-19 | 日本ピラー工業株式会社 | 単結晶SiCおよびその製造方法 |
-
1998
- 1998-06-23 CN CN98800898A patent/CN1231003A/zh active Pending
- 1998-06-23 WO PCT/JP1998/002798 patent/WO1999000538A1/ja not_active Application Discontinuation
- 1998-06-23 RU RU99106418/12A patent/RU2160329C1/ru not_active IP Right Cessation
- 1998-06-23 CA CA002263339A patent/CA2263339C/en not_active Expired - Fee Related
- 1998-06-23 EP EP98928638A patent/EP0922792A4/en not_active Withdrawn
- 1998-06-23 US US09/147,621 patent/US6153166A/en not_active Expired - Fee Related
-
1999
- 1999-02-10 KR KR1019997001108A patent/KR100287792B1/ko not_active IP Right Cessation
Non-Patent Citations (3)
Title |
---|
CHEMICAL ABSTRACTS, Vol. 78, No. 18, 7 May 1973, (Columbus, Ohio, USA), page 337, Abstract No. 116269j, BERMAN I. et al., "Influence of Annealing on Thin Films of beta SiC"; & U.S. AIR FORCE CAMBRIDGE RES. LAB., PHYS. SCI. RES. PAP., 1972, No. 516, 11 pp. (Eng). * |
CHEMICAL ABSTRACTS, Vol. 81, No. 24, 16 Dec. 1974, (Columbus, Ohio, USA), page 462, Abstract No. 160152b, BERMAN I. et al., "Annealing of Sputtered beta-Silicon Carbide", SILICON CARBIDE; & PROC. INT. CONF., 3rd, 1973 (Pub. 1974), 42-50 (Eng). * |
See also references of EP0922792A4 * |
Cited By (16)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6214108B1 (en) | 1998-05-19 | 2001-04-10 | Kabushiki Kaisha Toyota Chuo Kenkyusho | Method of manufacturing silicon carbide single crystal and silicon carbide single crystal manufactured by the same |
EP0967304A1 (en) * | 1998-05-29 | 1999-12-29 | Kabushiki Kaisha Toyota Chuo Kenkyusho | Method for manufacturing single crystal of silicon carbide |
US7311774B2 (en) | 1998-11-25 | 2007-12-25 | The Regents Of The University Of California | Shaped nanocrystal particles and methods for working the same |
US8608848B2 (en) | 2001-11-30 | 2013-12-17 | The Regents Of The University Of California | Shaped nanocrystal particles and methods for making the same |
US6855202B2 (en) | 2001-11-30 | 2005-02-15 | The Regents Of The University Of California | Shaped nanocrystal particles and methods for making the same |
US8062421B2 (en) | 2001-11-30 | 2011-11-22 | The Regents Of The University Of California | Shaped nanocrystal particles and methods for making the same |
JP5477380B2 (ja) * | 2009-05-11 | 2014-04-23 | 住友電気工業株式会社 | 半導体基板の製造方法 |
US8168515B2 (en) | 2009-05-11 | 2012-05-01 | Sumitomo Electric Industries, Ltd. | Method for manufacturing semiconductor substrate |
WO2010131569A1 (ja) * | 2009-05-11 | 2010-11-18 | 住友電気工業株式会社 | 半導体基板の製造方法 |
WO2017047478A1 (ja) * | 2015-09-14 | 2017-03-23 | 信越化学工業株式会社 | SiC複合基板及びその製造方法 |
JP2017059574A (ja) * | 2015-09-14 | 2017-03-23 | 信越化学工業株式会社 | SiC複合基板及びその製造方法 |
US10711373B2 (en) | 2015-09-14 | 2020-07-14 | Shin-Etsu Chemical Co., Ltd. | SiC composite substrate and method for manufacturing same |
US11208719B2 (en) | 2015-09-14 | 2021-12-28 | Shin-Etsu Chemical Co., Ltd. | SiC composite substrate and method for manufacturing same |
RU213493U1 (ru) * | 2022-06-24 | 2022-09-14 | Федеральное государственное бюджетное образовательное учреждение высшего образования "Национальный исследовательский Московский государственный строительный университет" (НИУ МГСУ) | Конструкция усиленного растянутого металлического элемента |
RU213498U1 (ru) * | 2022-06-24 | 2022-09-14 | Федеральное государственное бюджетное образовательное учреждение высшего образования "Национальный исследовательский Московский государственный строительный университет" (НИУ МГСУ) | Конструкция усиленного растянутого металлического элемента |
RU213500U1 (ru) * | 2022-06-24 | 2022-09-14 | Федеральное государственное бюджетное образовательное учреждение высшего образования "Национальный исследовательский Московский государственный строительный университет" (НИУ МГСУ) | Конструкция усиленного растянутого металлического элемента |
Also Published As
Publication number | Publication date |
---|---|
CN1231003A (zh) | 1999-10-06 |
CA2263339A1 (en) | 1999-01-07 |
CA2263339C (en) | 2002-07-23 |
KR100287792B1 (ko) | 2001-04-16 |
KR20000068096A (ko) | 2000-11-25 |
EP0922792A4 (en) | 2000-08-16 |
EP0922792A1 (en) | 1999-06-16 |
RU2160329C1 (ru) | 2000-12-10 |
US6153166A (en) | 2000-11-28 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
WO1999000538A1 (fr) | Sic monocristallin et procede de preparation associe | |
JP3043689B2 (ja) | 単結晶SiC及びその製造方法 | |
JP3254559B2 (ja) | 単結晶SiCおよびその製造方法 | |
WO1998053125A1 (fr) | Carbure de silicium monocrystallin et son procede de preparation | |
KR100287793B1 (ko) | 단결정 탄화규소 및 그 제조방법 | |
JP2884085B1 (ja) | 単結晶SiCおよびその製造方法 | |
KR100288473B1 (ko) | 단결정탄화규소 및 그 제조방법 | |
EP1130137B1 (en) | Material for raising single crystal sic and method of preparing single crystal sic | |
JP3254557B2 (ja) | 単結晶SiCおよびその製造方法 | |
JP2001253799A (ja) | 単結晶SiC及びその製造方法 | |
JP3043690B2 (ja) | 単結晶SiCおよびその製造方法 | |
JP2896667B1 (ja) | 単結晶SiC及びその製造方法 | |
JP3087030B2 (ja) | SiC複合体およびその製造方法ならびに単結晶SiC | |
JP2936481B1 (ja) | 単結晶SiCおよびその製造方法 | |
JP2939615B2 (ja) | 単結晶SiC及びその製造方法 | |
JP2002261011A (ja) | デバイス用多層構造基板 | |
JP2876122B1 (ja) | 単結晶SiCおよびその製造方法 | |
JP2003026500A (ja) | 結晶性SiC薄膜の構造およびその製造方法 | |
JP2001220297A (ja) | 単結晶SiC及びその育成方法 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
WWE | Wipo information: entry into national phase |
Ref document number: 98800898.X Country of ref document: CN |
|
AK | Designated states |
Kind code of ref document: A1 Designated state(s): CA CN KR RU US |
|
AL | Designated countries for regional patents |
Kind code of ref document: A1 Designated state(s): AT BE CH CY DE DK ES FI FR GB GR IE IT LU MC NL PT SE |
|
WWE | Wipo information: entry into national phase |
Ref document number: 09147621 Country of ref document: US |
|
ENP | Entry into the national phase |
Ref document number: 2263339 Country of ref document: CA Ref document number: 2263339 Country of ref document: CA Kind code of ref document: A |
|
WWE | Wipo information: entry into national phase |
Ref document number: 1019997001108 Country of ref document: KR Ref document number: 1998928638 Country of ref document: EP |
|
121 | Ep: the epo has been informed by wipo that ep was designated in this application | ||
WWP | Wipo information: published in national office |
Ref document number: 1998928638 Country of ref document: EP |
|
WWP | Wipo information: published in national office |
Ref document number: 1019997001108 Country of ref document: KR |
|
WWG | Wipo information: grant in national office |
Ref document number: 1019997001108 Country of ref document: KR |
|
WWW | Wipo information: withdrawn in national office |
Ref document number: 1998928638 Country of ref document: EP |