WO1998019332A1 - Procede de gravure a sec - Google Patents
Procede de gravure a sec Download PDFInfo
- Publication number
- WO1998019332A1 WO1998019332A1 PCT/JP1997/003968 JP9703968W WO9819332A1 WO 1998019332 A1 WO1998019332 A1 WO 1998019332A1 JP 9703968 W JP9703968 W JP 9703968W WO 9819332 A1 WO9819332 A1 WO 9819332A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- dry etching
- gas
- etching method
- perfluorocycloolefin
- etching
- Prior art date
Links
- 238000001312 dry etching Methods 0.000 title claims abstract description 51
- 238000000034 method Methods 0.000 title claims description 36
- 239000000758 substrate Substances 0.000 claims abstract description 22
- 125000004432 carbon atom Chemical group C* 0.000 claims abstract description 4
- 239000007789 gas Substances 0.000 claims description 59
- 238000005530 etching Methods 0.000 claims description 55
- CURLTUGMZLYLDI-UHFFFAOYSA-N Carbon dioxide Chemical compound O=C=O CURLTUGMZLYLDI-UHFFFAOYSA-N 0.000 claims description 8
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 7
- 229910052710 silicon Inorganic materials 0.000 claims description 7
- 239000010703 silicon Substances 0.000 claims description 7
- MWUXSHHQAYIFBG-UHFFFAOYSA-N Nitric oxide Chemical compound O=[N] MWUXSHHQAYIFBG-UHFFFAOYSA-N 0.000 claims description 6
- 239000000463 material Substances 0.000 claims description 6
- 239000000203 mixture Substances 0.000 claims description 6
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 4
- 239000001569 carbon dioxide Substances 0.000 claims description 4
- 229910002092 carbon dioxide Inorganic materials 0.000 claims description 4
- NBVXSUQYWXRMNV-UHFFFAOYSA-N fluoromethane Chemical compound FC NBVXSUQYWXRMNV-UHFFFAOYSA-N 0.000 claims description 4
- BSYNRYMUTXBXSQ-UHFFFAOYSA-N Aspirin Chemical compound CC(=O)OC1=CC=CC=C1C(O)=O BSYNRYMUTXBXSQ-UHFFFAOYSA-N 0.000 claims description 3
- 125000004122 cyclic group Chemical group 0.000 claims description 3
- 125000001153 fluoro group Chemical group F* 0.000 claims description 3
- 239000010409 thin film Substances 0.000 claims description 3
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 claims description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 2
- UGFAIRIUMAVXCW-UHFFFAOYSA-N Carbon monoxide Chemical compound [O+]#[C-] UGFAIRIUMAVXCW-UHFFFAOYSA-N 0.000 claims description 2
- KZBUYRJDOAKODT-UHFFFAOYSA-N Chlorine Chemical compound ClCl KZBUYRJDOAKODT-UHFFFAOYSA-N 0.000 claims description 2
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 claims description 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 2
- 239000000654 additive Substances 0.000 claims description 2
- 230000000996 additive effect Effects 0.000 claims description 2
- 229910052786 argon Inorganic materials 0.000 claims description 2
- 229910002091 carbon monoxide Inorganic materials 0.000 claims description 2
- 239000013078 crystal Substances 0.000 claims description 2
- 229910001873 dinitrogen Inorganic materials 0.000 claims description 2
- 229910001882 dioxygen Inorganic materials 0.000 claims description 2
- TXKMVPPZCYKFAC-UHFFFAOYSA-N disulfur monoxide Inorganic materials O=S=S TXKMVPPZCYKFAC-UHFFFAOYSA-N 0.000 claims description 2
- 239000011521 glass Substances 0.000 claims description 2
- 125000004435 hydrogen atom Chemical group [H]* 0.000 claims description 2
- 230000006698 induction Effects 0.000 claims description 2
- 229930195734 saturated hydrocarbon Natural products 0.000 claims description 2
- XTQHKBHJIVJGKJ-UHFFFAOYSA-N sulfur monoxide Chemical compound S=O XTQHKBHJIVJGKJ-UHFFFAOYSA-N 0.000 claims description 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims 1
- 239000002245 particle Substances 0.000 abstract 1
- 229920002120 photoresistant polymer Polymers 0.000 description 25
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 22
- 229920005591 polysilicon Polymers 0.000 description 16
- 239000010408 film Substances 0.000 description 12
- 210000002381 plasma Anatomy 0.000 description 12
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 8
- 230000000052 comparative effect Effects 0.000 description 8
- 229910052814 silicon oxide Inorganic materials 0.000 description 8
- YBMDPYAEZDJWNY-UHFFFAOYSA-N 1,2,3,3,4,4,5,5-octafluorocyclopentene Chemical compound FC1=C(F)C(F)(F)C(F)(F)C1(F)F YBMDPYAEZDJWNY-UHFFFAOYSA-N 0.000 description 6
- XPDWGBQVDMORPB-UHFFFAOYSA-N Fluoroform Chemical compound FC(F)F XPDWGBQVDMORPB-UHFFFAOYSA-N 0.000 description 6
- VLKZOEOYAKHREP-UHFFFAOYSA-N n-Hexane Chemical compound CCCCCC VLKZOEOYAKHREP-UHFFFAOYSA-N 0.000 description 6
- TXEYQDLBPFQVAA-UHFFFAOYSA-N tetrafluoromethane Chemical compound FC(F)(F)F TXEYQDLBPFQVAA-UHFFFAOYSA-N 0.000 description 6
- 238000010792 warming Methods 0.000 description 6
- 230000000694 effects Effects 0.000 description 5
- 229910052731 fluorine Inorganic materials 0.000 description 5
- 239000011737 fluorine Substances 0.000 description 5
- 238000005259 measurement Methods 0.000 description 5
- 230000001681 protective effect Effects 0.000 description 5
- 150000001875 compounds Chemical class 0.000 description 4
- -1 hexafluoromethane Chemical compound 0.000 description 4
- 238000001020 plasma etching Methods 0.000 description 4
- 229920006254 polymer film Polymers 0.000 description 4
- ZFFLXJVVPHACEG-UHFFFAOYSA-N 1,2,3,3,4,4,5,5,6,6-decafluorocyclohexene Chemical compound FC1=C(F)C(F)(F)C(F)(F)C(F)(F)C1(F)F ZFFLXJVVPHACEG-UHFFFAOYSA-N 0.000 description 3
- QVHWOZCZUNPZPW-UHFFFAOYSA-N 1,2,3,3,4,4-hexafluorocyclobutene Chemical compound FC1=C(F)C(F)(F)C1(F)F QVHWOZCZUNPZPW-UHFFFAOYSA-N 0.000 description 3
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 3
- 230000008021 deposition Effects 0.000 description 3
- BCCOBQSFUDVTJQ-UHFFFAOYSA-N octafluorocyclobutane Chemical compound FC1(F)C(F)(F)C(F)(F)C1(F)F BCCOBQSFUDVTJQ-UHFFFAOYSA-N 0.000 description 3
- 235000019407 octafluorocyclobutane Nutrition 0.000 description 3
- LVGUZGTVOIAKKC-UHFFFAOYSA-N 1,1,1,2-tetrafluoroethane Chemical compound FCC(F)(F)F LVGUZGTVOIAKKC-UHFFFAOYSA-N 0.000 description 2
- FNQNRPKHVFRIMO-UHFFFAOYSA-N 1,2,3,3,4,4,5-heptafluoro-5-(trifluoromethyl)cyclopentene Chemical compound FC1=C(F)C(F)(C(F)(F)F)C(F)(F)C1(F)F FNQNRPKHVFRIMO-UHFFFAOYSA-N 0.000 description 2
- XTLSITUJHHOIFO-UHFFFAOYSA-N 1,2,3,3,4-pentafluoro-4-(trifluoromethyl)cyclobutene Chemical compound FC1=C(F)C(F)(C(F)(F)F)C1(F)F XTLSITUJHHOIFO-UHFFFAOYSA-N 0.000 description 2
- FWJJAIJDVAMNAI-UHFFFAOYSA-N 1,3,3,4,4,5,5-heptafluoro-2-(trifluoromethyl)cyclopentene Chemical compound FC1=C(C(F)(F)F)C(F)(F)C(F)(F)C1(F)F FWJJAIJDVAMNAI-UHFFFAOYSA-N 0.000 description 2
- WZXKOFHRFDEUOI-UHFFFAOYSA-N 1,3,3,4,4-pentafluoro-2-(trifluoromethyl)cyclobutene Chemical compound FC1=C(C(F)(F)F)C(F)(F)C1(F)F WZXKOFHRFDEUOI-UHFFFAOYSA-N 0.000 description 2
- 239000004341 Octafluorocyclobutane Substances 0.000 description 2
- 229910018503 SF6 Inorganic materials 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 238000001816 cooling Methods 0.000 description 2
- LPIQUOYDBNQMRZ-UHFFFAOYSA-N cyclopentene Chemical compound C1CC=CC1 LPIQUOYDBNQMRZ-UHFFFAOYSA-N 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- ZGEGCLOFRBLKSE-UHFFFAOYSA-N methylene hexane Natural products CCCCCC=C ZGEGCLOFRBLKSE-UHFFFAOYSA-N 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- GTLACDSXYULKMZ-UHFFFAOYSA-N pentafluoroethane Chemical compound FC(F)C(F)(F)F GTLACDSXYULKMZ-UHFFFAOYSA-N 0.000 description 2
- 238000010791 quenching Methods 0.000 description 2
- 230000000171 quenching effect Effects 0.000 description 2
- 229920006395 saturated elastomer Polymers 0.000 description 2
- 150000003377 silicon compounds Chemical class 0.000 description 2
- SFZCNBIFKDRMGX-UHFFFAOYSA-N sulfur hexafluoride Chemical compound FS(F)(F)(F)(F)F SFZCNBIFKDRMGX-UHFFFAOYSA-N 0.000 description 2
- 229960000909 sulfur hexafluoride Drugs 0.000 description 2
- RIQRGMUSBYGDBL-UHFFFAOYSA-N 1,1,1,2,2,3,4,5,5,5-decafluoropentane Chemical compound FC(F)(F)C(F)C(F)C(F)(F)C(F)(F)F RIQRGMUSBYGDBL-UHFFFAOYSA-N 0.000 description 1
- ODOQEDLJVNKDMU-UHFFFAOYSA-N 1,1,1,2,2,3,5,5,5-nonafluoropentane Chemical compound FC(F)(F)CC(F)C(F)(F)C(F)(F)F ODOQEDLJVNKDMU-UHFFFAOYSA-N 0.000 description 1
- BSRRYOGYBQJAFP-UHFFFAOYSA-N 1,1,1,2,2,3-hexafluorobutane Chemical compound CC(F)C(F)(F)C(F)(F)F BSRRYOGYBQJAFP-UHFFFAOYSA-N 0.000 description 1
- SUAMPXQALWYDBK-UHFFFAOYSA-N 1,1,1,2,2,3-hexafluoropropane Chemical compound FCC(F)(F)C(F)(F)F SUAMPXQALWYDBK-UHFFFAOYSA-N 0.000 description 1
- NSGXIBWMJZWTPY-UHFFFAOYSA-N 1,1,1,3,3,3-hexafluoropropane Chemical compound FC(F)(F)CC(F)(F)F NSGXIBWMJZWTPY-UHFFFAOYSA-N 0.000 description 1
- SOJZMJXWEOBDIC-UHFFFAOYSA-N 1,1,2,2,3,3,4,4,5-nonafluorocyclopentane Chemical compound FC1C(F)(F)C(F)(F)C(F)(F)C1(F)F SOJZMJXWEOBDIC-UHFFFAOYSA-N 0.000 description 1
- GGMAUXPWPYFQRB-UHFFFAOYSA-N 1,1,2,2,3,3,4,4-octafluorocyclopentane Chemical compound FC1(F)CC(F)(F)C(F)(F)C1(F)F GGMAUXPWPYFQRB-UHFFFAOYSA-N 0.000 description 1
- LGWNSTJNCWGDPH-UHFFFAOYSA-N 1,1,2,2,3,3,4-heptafluorocyclobutane Chemical compound FC1C(F)(F)C(F)(F)C1(F)F LGWNSTJNCWGDPH-UHFFFAOYSA-N 0.000 description 1
- IDBYQQQHBYGLEQ-UHFFFAOYSA-N 1,1,2,2,3,3,4-heptafluorocyclopentane Chemical compound FC1CC(F)(F)C(F)(F)C1(F)F IDBYQQQHBYGLEQ-UHFFFAOYSA-N 0.000 description 1
- DGLFZUBOMRZNQX-UHFFFAOYSA-N 1,1,2,2,3,3-hexafluorocyclobutane Chemical compound FC1(F)CC(F)(F)C1(F)F DGLFZUBOMRZNQX-UHFFFAOYSA-N 0.000 description 1
- GQUXQQYWQKRCPL-UHFFFAOYSA-N 1,1,2,2,3,3-hexafluorocyclopropane Chemical compound FC1(F)C(F)(F)C1(F)F GQUXQQYWQKRCPL-UHFFFAOYSA-N 0.000 description 1
- ZVJOQYFQSQJDDX-UHFFFAOYSA-N 1,1,2,3,3,4,4,4-octafluorobut-1-ene Chemical compound FC(F)=C(F)C(F)(F)C(F)(F)F ZVJOQYFQSQJDDX-UHFFFAOYSA-N 0.000 description 1
- WNTWINLSQMTYPG-UHFFFAOYSA-N 1,2,3,3,4,4,5,5,6,6,7,7,8,8-tetradecafluorocyclooctene Chemical compound FC1=C(F)C(F)(F)C(F)(F)C(F)(F)C(F)(F)C(F)(F)C1(F)F WNTWINLSQMTYPG-UHFFFAOYSA-N 0.000 description 1
- IFRIJEKNVVMZBB-UHFFFAOYSA-N 1-fluorocyclopentene Chemical compound FC1=CCCC1 IFRIJEKNVVMZBB-UHFFFAOYSA-N 0.000 description 1
- GKZRDGURFXRWBA-UHFFFAOYSA-N CCC.F.F.F.F.F.F.F.F Chemical compound CCC.F.F.F.F.F.F.F.F GKZRDGURFXRWBA-UHFFFAOYSA-N 0.000 description 1
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- NIPNSKYNPDTRPC-UHFFFAOYSA-N N-[2-oxo-2-(2,4,6,7-tetrahydrotriazolo[4,5-c]pyridin-5-yl)ethyl]-2-[[3-(trifluoromethoxy)phenyl]methylamino]pyrimidine-5-carboxamide Chemical compound O=C(CNC(=O)C=1C=NC(=NC=1)NCC1=CC(=CC=C1)OC(F)(F)F)N1CC2=C(CC1)NN=N2 NIPNSKYNPDTRPC-UHFFFAOYSA-N 0.000 description 1
- 241000287463 Phalacrocorax Species 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- WGLPBDUCMAPZCE-UHFFFAOYSA-N Trioxochromium Chemical compound O=[Cr](=O)=O WGLPBDUCMAPZCE-UHFFFAOYSA-N 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 230000033228 biological regulation Effects 0.000 description 1
- RJCQBQGAPKAMLL-UHFFFAOYSA-N bromotrifluoromethane Chemical compound FC(F)(F)Br RJCQBQGAPKAMLL-UHFFFAOYSA-N 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 239000011651 chromium Substances 0.000 description 1
- 229910000423 chromium oxide Inorganic materials 0.000 description 1
- 125000000753 cycloalkyl group Chemical group 0.000 description 1
- 238000011156 evaluation Methods 0.000 description 1
- 230000001747 exhibiting effect Effects 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 230000020169 heat generation Effects 0.000 description 1
- WMIYKQLTONQJES-UHFFFAOYSA-N hexafluoroethane Chemical compound FC(F)(F)C(F)(F)F WMIYKQLTONQJES-UHFFFAOYSA-N 0.000 description 1
- HCDGVLDPFQMKDK-UHFFFAOYSA-N hexafluoropropylene Chemical compound FC(F)=C(F)C(F)(F)F HCDGVLDPFQMKDK-UHFFFAOYSA-N 0.000 description 1
- 238000004770 highest occupied molecular orbital Methods 0.000 description 1
- TUJKJAMUKRIRHC-UHFFFAOYSA-N hydroxyl Chemical compound [OH] TUJKJAMUKRIRHC-UHFFFAOYSA-N 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- QKCGXXHCELUCKW-UHFFFAOYSA-N n-[4-[4-(dinaphthalen-2-ylamino)phenyl]phenyl]-n-naphthalen-2-ylnaphthalen-2-amine Chemical compound C1=CC=CC2=CC(N(C=3C=CC(=CC=3)C=3C=CC(=CC=3)N(C=3C=C4C=CC=CC4=CC=3)C=3C=C4C=CC=CC4=CC=3)C3=CC4=CC=CC=C4C=C3)=CC=C21 QKCGXXHCELUCKW-UHFFFAOYSA-N 0.000 description 1
- RGSFGYAAUTVSQA-UHFFFAOYSA-N pentamethylene Natural products C1CCCC1 RGSFGYAAUTVSQA-UHFFFAOYSA-N 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 238000006116 polymerization reaction Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/30604—Chemical etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
- H01L21/31105—Etching inorganic layers
- H01L21/31111—Etching inorganic layers by chemical means
- H01L21/31116—Etching inorganic layers by chemical means by dry-etching
Definitions
- the present invention relates to a dry etching method. More specifically, the present invention relates to a dry etching method capable of performing high-speed etching and exhibiting good selectivity to a protective film such as a photoresist and polysilicon.
- a dry etching method capable of performing high-speed etching and exhibiting good selectivity to a protective film such as a photoresist and polysilicon.
- Dry etching technology is being improved daily as a very important technology for forming such fine patterns for high integration on a silicon wafer.
- gas containing a large amount of fluorine atoms has been used as an etching gas in order to generate reactive species including fluorine by plasma discharge or the like.
- fluorine-containing etching gas include highly-fluorinated gases such as carbon tetrafluoride, sulfur hexafluoride, nitrogen trifluoride, carbon trifluoride bromide, trifluoromethane, hexafluoromethane, and propane octafluoride.
- highly-fluorinated gases such as carbon tetrafluoride, sulfur hexafluoride, nitrogen trifluoride, carbon trifluoride bromide, trifluoromethane, hexafluoromethane, and propane octafluoride.
- Compounds are mentioned.
- Japanese Patent Application Laid-Open No. HEI 4-17026 discloses that the temperature of a substrate to be etched is set at 50 ° C. by using a gas containing an unsaturated fluorocarbon such as perfluoropropene or perfluorobutene. A technique for etching a silicon compound while controlling the temperature to not more than ° C is disclosed. In addition, Japanese Patent Application Laid-Open No.
- 4-25811 / 17 discloses cyclic saturated compounds such as perfluorocyclopropane, perfluorocyclobutane, perfluorocyclobutene, and perfluorocyclopentene.
- cyclic saturated compounds such as perfluorocyclopropane, perfluorocyclobutane, perfluorocyclobutene, and perfluorocyclopentene.
- a technique of performing etching using a gas containing cyclic unsaturated fluorocarbon while similarly controlling the temperature of the substrate to be etched to 50 ° C. or lower.
- An object of the present invention is to provide high selectivity to a photoresist and a protective film such as polysilicon and to perform high-speed etching in view of the state of the prior art as described above.
- An object of the present invention is to provide a dry etching method capable of achieving a good etching effect without forming a film.
- the present inventors have repeatedly performed dry etching of a silicon compound using a dry etching gas containing various perfluorocycloolefins, and as a result, generated plasma in a high-density region of 1 O io cm ⁇ 3 or more. It has been found that dry etching at high speed has high speed, high selectivity to photoresist and high selectivity to polysilicon, and can achieve good etching without forming a polymer film.
- dry etching at high speed has high speed, high selectivity to photoresist and high selectivity to polysilicon, and can achieve good etching without forming a polymer film.
- the dry etching gas containing perfluorocycloolefin used in the present invention may be any gas as long as fluorine radicals are generated by plasma in dry etching, and the number of carbon atoms of perfluorocycloolefin is as follows. Although not particularly limited, it is usually 3 to 8, preferably 4 to 6, and most preferably 5.
- perfluorocycloolefin examples include perfluorocycloprobene, perfluorocyclobutene, perfluorocyclopentene, perfluorocyclohexene, and perfluorocyclohexene. Heptene, perfluorocyclooctene, perfluoro-1-methylcyclobutene, perfluoro-3-methylcyclobutene, perfluoro-1-methylcyclopentene, perfluoro-3-methylcyclopentene, and the like.
- perfluorocyclobutene perfluorocyclopentene, perfluorocyclohexene, perfluoro-1-methylcyclobutene, perfluoro-3-methylcyclobutene, perfluoro-1-methylcyclopentene, perfluoro-3-methylcyclopentene, and the like are preferable.
- Orocyclopentene is most preferred.
- These perfluorocycloolefins can be used alone or in combination of two or more.
- a perfluoroolefin other than perfluorocycloolefin that is, a linear unsaturated perfluorocarbon, and Z or perfluoroalkane and no or perfluorocycloalkane are used in combination.
- the purpose of the present invention cannot be achieved if a large amount of these fluorocarbons used in combination is used in large amounts. Therefore, the amount is usually 30% by weight or less of the total amount of fluorocarbons, preferably Is 20% by weight or less, more preferably 10% by weight or less.
- a fluorine-containing fluorocarbon can be used in combination with the above-mentioned fluorocycloolefin.
- the hydrofluorocarbon gas is not particularly limited as long as it has volatility, but usually, at least half of the hydrogen atoms of a linear, branched or cyclic saturated hydrocarbon are replaced with fluorine. Selected from compounds.
- saturated hydrofluorocarbon gases include, for example, trifluoromethane, pentafluoroethane, tetrafluoroethane, hepfluorofluoropropane, hexafluoropropane, pentafluorofluoropropane, nonafluorobutane, o Fluorobutane, Hepofurobutane, Hexafluorobutane, Pendekafluoropentane, Decafluoropentane, Nonafluoropentane, Okuyu Fluoropentane, Trideka fluohexane, Dodecafluo hexane, Pendekafluo Mouth hexane, heptafluorocycl
- the amount of the hydrofluorocarbon gas used in combination with the perfluorocyclorefin depends on the degree of the effect of the gas on the material to be etched, but is usually 50 mol% or less, preferably less than 50 mol%, based on the perfluorocarbon. 30 mol% or less.
- the above-mentioned dry etching gas may contain various other gases generally used as a dry etching gas, if necessary. Examples of such a gas include oxygen gas, nitrogen gas, argon gas, hydrogen gas, chlorine gas, carbon monoxide gas, carbon dioxide gas, nitrogen oxide gas, and sulfur oxide gas. Oxygen and carbon dioxide gas are preferred, and oxygen is most preferred. These additive gases may be used alone or in combination of two or more.
- the amount of gas to be added depends on the degree of the effect of the gas on the material to be etched, but is usually a dry etching gas containing perfluorocycloolefin. It is selected within a range of 40 parts by weight or less, preferably 3 to 25 parts by weight based on 100 parts by weight.
- the substrate to be etched is a substrate such as a glass substrate, a silicon single crystal wafer, or gallium-arsenic provided with a thin film layer of a material to be etched.
- the material to be etched include silicon oxide, silicon nitride, aluminum, tungsten, molybdenum, tantalum, titanium, chromium, chromium oxide, and gold.
- a silicon wafer provided with a silicon oxide or aluminum thin film is preferably used.
- the protective film provided thereon include photoresist and polysilicon.
- plasmas irradiated at the time of etching are generated in a high-density region of 1 Oiocm- 3 or more.
- the plasma density is too low, the particularly high etching rate, high photoresist selectivity, and polysilicon selectivity that the present invention aims at cannot be achieved, and a polymer film is formed by deposition. In many cases, this is undesirable.
- the pressure at the time of etching the gas composition containing the gas for dry etching and other gas used in combination as required does not need to be selected in a special range.
- the gas composition is introduced into the etching apparatus degassed at a pressure of about 10 torr to 10-5 torr. Preferably 10 torr to: L 0 -3 torr.
- the ultimate temperature of the substrate to be etched is usually in the range of 0 ° C. to about 300 ° C., preferably 60 ° C. to 250 ° C., and more preferably 80 ° C. to 200 ° C. is there.
- etching is preferably performed without substantially controlling the attained temperature of the substrate to be etched.
- "etching without substantial control" means that the temperature of the substrate to be etched is within ⁇ 30% when the temperature of the substrate to be etched is not controlled at all, preferably ⁇ 30%. This refers to performing etching at a temperature within 20%, more preferably within ⁇ 10%.
- the temperature is usually set to a temperature of 60 ° C to about 250 ° C, more preferably 80 ° C to 200 ° C. The range allows high-speed etching while maintaining high selectivity to polysilicon and selectivity to photoresist.
- the dry etching at a low temperature promotes the polymerization of perfluorocycloolefin and avoids the deposition of the produced polymer on the substrate.
- the etching time is about 10 seconds to 10 minutes.
- high-speed etching is generally possible, so that it is preferably 10 seconds to 3 minutes from the viewpoint of improving productivity.
- Helicon wave type plasma etching apparatus I one 4 1 0 0 SH type, Aneru Ba Co., Ltd.
- PR photoresist
- P o 1 y _ Si A silicon wafer having a diameter of 150 mm with one of the films formed on the surface is set, the system is evacuated, and an etching gas composition containing perfluorocycloolefin is added. The flow was introduced at a flow rate of 50 sccm. Fluorescent cyclopentene was used as perfluorocyclorefin.
- the experiment was performed under the conditions of different plasma densities shown in Table 1 while maintaining the pressure in the system at 5 mm Torr and changing the electrical energy for plasma generation. At this time, the temperature of the wafer was not controlled, but increased to about 130 ° C. in all the examples.
- the etching time was selected in the range of 15-60 seconds.
- the measurement of the etching rate was performed at a total of five points including the center of the wafer and measurement points of 35 mm and 65 mm from both sides from the center along the diameter of the wafer.
- the etching rate at each measurement point under each condition (the etching rate at the above five measurement points on the wafer diameter was sequentially set to the etching rate—1 to the etching rate—15) was measured. Further, the same etching silicon oxide on the condition (S i 0 2), photoresist Bok (PR), by comparison Etsu quenching rate of polysilicon (P o 1 y- S i) , versus photoresist selectivity etching and The selectivity to polysilicon was evaluated. Selectivity was calculated from the following equation.
- Table 1 shows the etching conditions and evaluation results.
- the type of the used wafer is as follows.
- Example 1 A 150 mm diameter silicon wafer having a silicon oxide film formed on its surface was set in a parallel plate type reactive ion etching plasma etching system (Tokyo Electron, TE 5000 S). Dry etching was performed in the same manner as in 4. However, some of the etching conditions were changed as follows.
- Dry etching was carried out in the same manner as in Examples 1 to 9, except that the perfluorocycloolefin contained in the etching gas composition was changed to carbon tetrafluoride. The results are shown in Table 2.
- Etching was carried out in the same manner as in Examples 1 to 9 except that the perfluorocycloolefin contained in the gas composition for dry etching was changed to octafluorocyclobutane. The results are shown in Table 3.
- a polymer film is formed by deposition by generating plasma in a high-density region and dry-etching the substrate to be etched using a gas for dry etching containing perfluorocycloolefin.
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- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
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Description
Claims
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US09/297,070 US6383403B1 (en) | 1996-10-30 | 1997-10-30 | Dry etching method |
EP97909705A EP0964438B1 (en) | 1996-10-30 | 1997-10-30 | Dry etching method |
DE69737237T DE69737237T2 (de) | 1996-10-30 | 1997-10-30 | Verfahren zur trockenätzung |
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP8/305818 | 1996-10-30 | ||
JP8/305820 | 1996-10-30 | ||
JP30581896 | 1996-10-30 | ||
JP30582096 | 1996-10-30 |
Publications (1)
Publication Number | Publication Date |
---|---|
WO1998019332A1 true WO1998019332A1 (fr) | 1998-05-07 |
Family
ID=26564466
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/JP1997/003968 WO1998019332A1 (fr) | 1996-10-30 | 1997-10-30 | Procede de gravure a sec |
Country Status (6)
Country | Link |
---|---|
US (1) | US6383403B1 (ja) |
EP (1) | EP0964438B1 (ja) |
KR (1) | KR100490968B1 (ja) |
DE (1) | DE69737237T2 (ja) |
TW (1) | TW403955B (ja) |
WO (1) | WO1998019332A1 (ja) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2000039839A2 (en) * | 1998-12-29 | 2000-07-06 | Lam Research Corporation | High aspect ratio sub-micron contact etch process in an inductively-coupled plasma processing system |
WO2000071497A1 (fr) * | 1999-05-24 | 2000-11-30 | Nippon Zeon Co., Ltd. | Gaz destine a une reaction au plasma et procede de production associe |
Families Citing this family (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3905232B2 (ja) * | 1997-12-27 | 2007-04-18 | 東京エレクトロン株式会社 | エッチング方法 |
KR100727834B1 (ko) * | 2000-09-07 | 2007-06-14 | 다이킨 고교 가부시키가이샤 | 드라이 에칭 가스 및 드라이 에칭 방법 |
JP4186045B2 (ja) * | 2000-11-08 | 2008-11-26 | ダイキン工業株式会社 | ドライエッチングガスおよびドライエッチング方法 |
CN1605117B (zh) * | 2001-12-13 | 2010-05-12 | 应用材料股份有限公司 | 具有对氮化物肩部高度敏感性的自对准接触蚀刻 |
US6920267B2 (en) * | 2002-05-13 | 2005-07-19 | Alps Electric Co., Ltd | Optical coupling device and manufacturing method thereof |
WO2004093178A1 (ja) * | 2003-04-11 | 2004-10-28 | Hoya Corporation | クロム系薄膜のエッチング方法及びフォトマスクの製造方法 |
US20060234441A1 (en) * | 2005-04-13 | 2006-10-19 | Promos Technologies Inc. | Method for preparing a deep trench |
JP4749174B2 (ja) * | 2006-02-13 | 2011-08-17 | パナソニック株式会社 | ドライエッチング方法、微細構造形成方法、モールド及びその製造方法 |
IL292568A (en) * | 2020-02-26 | 2022-06-01 | Showa Denko Kk | A dry etching method, a semiconductor element manufacturing method, and a cleaning method |
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JPH04346427A (ja) * | 1991-05-24 | 1992-12-02 | Sony Corp | ドライエッチング方法 |
JPH06275568A (ja) * | 1993-03-19 | 1994-09-30 | Sony Corp | ドライエッチング方法 |
JPH07161702A (ja) * | 1993-10-29 | 1995-06-23 | Applied Materials Inc | 酸化物のプラズマエッチング方法 |
JPH07221068A (ja) * | 1994-01-31 | 1995-08-18 | Sony Corp | プラズマ装置およびこれを用いたドライエッチング方法 |
JPH07283206A (ja) * | 1994-02-10 | 1995-10-27 | Sony Corp | プラズマ装置およびこれを用いたプラズマ処理方法 |
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US4431477A (en) * | 1983-07-05 | 1984-02-14 | Matheson Gas Products, Inc. | Plasma etching with nitrous oxide and fluoro compound gas mixture |
JP3038950B2 (ja) | 1991-02-12 | 2000-05-08 | ソニー株式会社 | ドライエッチング方法 |
JP2687787B2 (ja) * | 1991-10-02 | 1997-12-08 | ソニー株式会社 | ドライエッチング方法 |
JP3208596B2 (ja) * | 1992-04-01 | 2001-09-17 | ソニー株式会社 | ドライエッチング方法 |
JP3277394B2 (ja) * | 1992-12-04 | 2002-04-22 | ソニー株式会社 | 半導体装置の製造方法 |
US5770098A (en) * | 1993-03-19 | 1998-06-23 | Tokyo Electron Kabushiki Kaisha | Etching process |
JP3301157B2 (ja) * | 1993-05-06 | 2002-07-15 | ソニー株式会社 | ドライエッチング方法 |
US6036878A (en) * | 1996-02-02 | 2000-03-14 | Applied Materials, Inc. | Low density high frequency process for a parallel-plate electrode plasma reactor having an inductive antenna |
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1997
- 1997-10-30 KR KR10-1999-7003854A patent/KR100490968B1/ko not_active IP Right Cessation
- 1997-10-30 WO PCT/JP1997/003968 patent/WO1998019332A1/ja active IP Right Grant
- 1997-10-30 US US09/297,070 patent/US6383403B1/en not_active Expired - Fee Related
- 1997-10-30 EP EP97909705A patent/EP0964438B1/en not_active Expired - Lifetime
- 1997-10-30 DE DE69737237T patent/DE69737237T2/de not_active Expired - Lifetime
- 1997-10-30 TW TW086116290A patent/TW403955B/zh active
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JPH04346427A (ja) * | 1991-05-24 | 1992-12-02 | Sony Corp | ドライエッチング方法 |
JPH06275568A (ja) * | 1993-03-19 | 1994-09-30 | Sony Corp | ドライエッチング方法 |
JPH07161702A (ja) * | 1993-10-29 | 1995-06-23 | Applied Materials Inc | 酸化物のプラズマエッチング方法 |
JPH07221068A (ja) * | 1994-01-31 | 1995-08-18 | Sony Corp | プラズマ装置およびこれを用いたドライエッチング方法 |
JPH07283206A (ja) * | 1994-02-10 | 1995-10-27 | Sony Corp | プラズマ装置およびこれを用いたプラズマ処理方法 |
JPH07335611A (ja) * | 1994-06-06 | 1995-12-22 | Hitachi Ltd | プラズマエッチング方法 |
JPH0851097A (ja) * | 1994-08-05 | 1996-02-20 | Sony Corp | プラズマエッチング装置およびプラズマエッチング方法 |
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Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2000039839A2 (en) * | 1998-12-29 | 2000-07-06 | Lam Research Corporation | High aspect ratio sub-micron contact etch process in an inductively-coupled plasma processing system |
WO2000039839A3 (en) * | 1998-12-29 | 2000-11-23 | Lam Res Corp | High aspect ratio sub-micron contact etch process in an inductively-coupled plasma processing system |
US6228774B1 (en) | 1998-12-29 | 2001-05-08 | Lam Research Corporation | High aspect ratio sub-micron contact etch process in an inductively-coupled plasma processing system |
WO2000071497A1 (fr) * | 1999-05-24 | 2000-11-30 | Nippon Zeon Co., Ltd. | Gaz destine a une reaction au plasma et procede de production associe |
US7449415B2 (en) | 1999-05-24 | 2008-11-11 | Zeon Corporation | Gas for plasma reaction and process for producing thereof |
Also Published As
Publication number | Publication date |
---|---|
EP0964438B1 (en) | 2007-01-10 |
EP0964438A1 (en) | 1999-12-15 |
KR100490968B1 (ko) | 2005-05-24 |
EP0964438A4 (en) | 2000-02-02 |
TW403955B (en) | 2000-09-01 |
DE69737237D1 (de) | 2007-02-22 |
KR20000052977A (ko) | 2000-08-25 |
DE69737237T2 (de) | 2007-05-24 |
US6383403B1 (en) | 2002-05-07 |
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