WO1994005044A1 - Optical sensor and method of its manufacture - Google Patents
Optical sensor and method of its manufacture Download PDFInfo
- Publication number
- WO1994005044A1 WO1994005044A1 PCT/JP1993/001165 JP9301165W WO9405044A1 WO 1994005044 A1 WO1994005044 A1 WO 1994005044A1 JP 9301165 W JP9301165 W JP 9301165W WO 9405044 A1 WO9405044 A1 WO 9405044A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- light
- film
- photoelectric conversion
- conversion element
- transparent body
- Prior art date
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- 230000003287 optical effect Effects 0.000 title claims description 46
- 238000000034 method Methods 0.000 title claims description 12
- 238000004519 manufacturing process Methods 0.000 title claims description 11
- 238000001514 detection method Methods 0.000 claims description 42
- 238000006243 chemical reaction Methods 0.000 claims description 38
- 230000005540 biological transmission Effects 0.000 claims description 15
- 230000015572 biosynthetic process Effects 0.000 claims description 2
- 239000011521 glass Substances 0.000 abstract description 45
- 239000010408 film Substances 0.000 description 142
- 230000005855 radiation Effects 0.000 description 37
- 239000000758 substrate Substances 0.000 description 37
- 239000004065 semiconductor Substances 0.000 description 22
- 229910021417 amorphous silicon Inorganic materials 0.000 description 13
- 239000000463 material Substances 0.000 description 11
- 238000010586 diagram Methods 0.000 description 10
- 229910052751 metal Inorganic materials 0.000 description 6
- 239000002184 metal Substances 0.000 description 6
- 229910052804 chromium Inorganic materials 0.000 description 4
- 229910052759 nickel Inorganic materials 0.000 description 4
- 238000005530 etching Methods 0.000 description 3
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 3
- CDBYLPFSWZWCQE-UHFFFAOYSA-L Sodium Carbonate Chemical compound [Na+].[Na+].[O-]C([O-])=O CDBYLPFSWZWCQE-UHFFFAOYSA-L 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000012528 membrane Substances 0.000 description 2
- 229920005989 resin Polymers 0.000 description 2
- 239000011347 resin Substances 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- 229910052719 titanium Inorganic materials 0.000 description 2
- 239000012780 transparent material Substances 0.000 description 2
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 229910000808 amorphous metal alloy Inorganic materials 0.000 description 1
- 239000003738 black carbon Substances 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 238000004364 calculation method Methods 0.000 description 1
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- 238000005286 illumination Methods 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 229910001092 metal group alloy Inorganic materials 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
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- 239000000126 substance Substances 0.000 description 1
Classifications
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01C—MEASURING DISTANCES, LEVELS OR BEARINGS; SURVEYING; NAVIGATION; GYROSCOPIC INSTRUMENTS; PHOTOGRAMMETRY OR VIDEOGRAMMETRY
- G01C21/00—Navigation; Navigational instruments not provided for in groups G01C1/00 - G01C19/00
- G01C21/02—Navigation; Navigational instruments not provided for in groups G01C1/00 - G01C19/00 by astronomical means
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14643—Photodiode arrays; MOS imagers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/02016—Circuit arrangements of general character for the devices
- H01L31/02019—Circuit arrangements of general character for the devices for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/02024—Position sensitive and lateral effect photodetectors; Quadrant photodiodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0216—Coatings
- H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/02162—Coatings for devices characterised by at least one potential jump barrier or surface barrier for filtering or shielding light, e.g. multicolour filters for photodetectors
- H01L31/02164—Coatings for devices characterised by at least one potential jump barrier or surface barrier for filtering or shielding light, e.g. multicolour filters for photodetectors for shielding light, e.g. light blocking layers, cold shields for infrared detectors
Definitions
- the present invention relates to an optical sensor that detects at least one of the direction, altitude, and intensity of light, and a method for manufacturing the same.
- a solar radiation sensor for detecting the direction of light entering a vehicle cabin is known as a conventional technology.
- the solar radiation sensor includes a light-shielding member (instrument panel 20) having a slit for transmitting solar light, and a photoelectric conversion element (variable resistance element 23, A photoconductive element 24 and a common terminal board 25), and are configured to output a signal corresponding to the position of light irradiated on the photoelectric conversion element via the slit. Then, based on this signal, the microcomputer can detect the direction of the incident light.
- the light shielding member is constituted by an instrument panel, but is usually constituted by a thin plate or the like in which a transmission hole such as a pinhole or a slit is formed.
- a light shielding film made of a thin plate and the photoelectric conversion element
- the light shielding film and the photoelectric conversion element must be separately assembled in the case. The assembly was very poor.
- the above-described problem is not limited to the solar radiation sensor.
- a sensor including a light-shielding film in which a transmission hole such as a pinhole or a slit is formed and a photoelectric conversion element as described above is used. Even when applied to a throttle position sensor, etc., these light shielding films and photoelectric conversion elements are assembled in a sensor case. At the time of mounting, there is a problem that its assemblability is poor. In short, this problem commonly occurs in optical sensors that have a light-shielding film with a transmission hole such as a pinhole or slit and a photoelectric conversion element. .
- the present invention solves the above problem by assembling the light-shielding film having the transmission holes such as pinholes and slits and the photoelectric conversion element to the sensor case with good assemblability.
- An object of the present invention is to provide an optical sensor that can be attached and a manufacturing method thereof. Disclosure of the invention
- a photoelectric conversion element attached to the transparent body
- An optical sensor consisting of
- the light-shielding film and the photoelectric conversion element are both adhered to the transparent body. Therefore, when assembling the light-shielding film and the photoelectric conversion element to the case of the optical sensor, the transparent body should By assembling in the case of the sensor, both the light shielding film and the photoelectric conversion element can be assembled in the case of the optical sensor at the same time, and the assemblability becomes very good.
- a first mark is placed on the one surface of the transparent body at a position separated from the detection surface of the photoelectric conversion element. Perform the first step of marking,
- the photoelectric conversion Performing a second step of marking the second mark at a position having the same positional relationship as the positional relationship between the predetermined position on the detection surface of the element and the first mark;
- the photoelectric conversion element or the light-shielding film may be formed on the one surface of the transparent body or the light-shielding film so that the first mark and the second mark are aligned with each other.
- the gist is a method for manufacturing an optical sensor, wherein the method is applied on the other surface.
- the positional relationship between the transmission hole of the light shielding film and the photoelectric conversion element can be set to a predetermined positional relationship. Therefore, the positional relationship between the transmission hole of the light-shielding film and the photoelectric conversion element can be arbitrarily set according to the position of the first mark and the second mark.
- the positional relationship between the transmission hole of the light shielding film and the photoelectric conversion element can be arbitrarily set.
- FIG. 1 is a sectional view showing a main part of a first embodiment manufactured using the first embodiment of the present invention.
- FIG. 2 is a perspective view showing a schematic configuration of the omnidirectional solar radiation sensor of the first embodiment manufactured using the first embodiment.
- FIG. 3 is a perspective view showing a schematic configuration of the omnidirectional solar radiation sensor of FIG.
- FIG. 4 is a plan view showing the shape of the light shielding film of the omnidirectional solar radiation sensor of FIG.
- FIG. 5 is a plan view showing a state in which many light-shielding films are formed on the surface of a glass substrate.
- FIG. 6 is a schematic diagram showing a layer structure of a light position detecting element of the illustrated omnidirectional solar radiation sensor.
- FIG. 1 is a sectional view showing a main part of a first embodiment manufactured using the first embodiment.
- FIG. 2 is a perspective view showing a schematic configuration of the omnidirectional solar radiation sensor of the first embodiment manufactured using the first embodiment.
- FIG. 3 is a
- FIG. 12 is a perspective view showing a schematic configuration of an omnidirectional solar radiation sensor according to a second embodiment manufactured by using the present invention.
- FIG. 13 is a sectional view showing a schematic configuration of an optical position detecting element (not known).
- FIG. 1 to FIG. 3 are diagrams showing a schematic configuration of an omnidirectional solar radiation sensor manufactured by using the present invention.
- the omnidirectional solar radiation sensor 1 is arranged, for example, on the upper part of an instrument panel near the front glass of an automobile, and is used for an auto air conditioner for automobiles that automatically corrects the effect of solar radiation inserted into the vehicle interior.
- the auto air conditioner changes the air volume ratio blown out from the left and right vent outlets (not shown) based on the solar elevation angle, solar azimuth angle, and solar radiation intensity detected by the omnidirectional solar radiation sensor 1 (air volume ratio switching damper).
- a control circuit (not shown) is provided to automatically control the system so that it can be switched linearly.
- the light-shielding film 3 shields the upper surface of the detection surface 40 (see FIG. 1) of the light position detection element 4 from light.
- the light-shielding film 3 is formed in a square shape of 12 mm ⁇ 2 mm, and is made of a light-shielding material such as an epoxy resin mixed with black carbon or a black organic substance.
- the light-shielding film 3 is A light-shielding ink that has the property of blocking light directly is screen-printed on the surface, and a pin for irradiating spot-shaped sunlight to the detection surface 40 of the light position detection element 4 at the center. Hole 31 is formed.
- the pinhole 31 is the transmission hole of the present invention, and is formed in a circular shape at the center of the light shielding film 3.
- the four alignment marks 3a to 3d are simultaneously screen-printed on the surface of the glass substrate 20 before cutting.
- a light-shielding material that does not transmit light (a metal alloy film, a transparent resin, or the like) is sputtered or vapor-deposited on the surface of the glass substrate 2, and a metal mask is formed using photolithography.
- the optical position detection element 4 may be formed by a first-class pattern.
- the optical position detection element 4 is formed on a glass substrate 2 and is made of an X-direction resistor film 5 made of a transparent resistor, and a photoconductive film 6 utilizing the photoconductive effect of a photoelectric conversion film.
- a Y-direction resistor film 7 composed of a metal electrode resistor, and a total of four lead electrodes X, X ', 2, two from each end of the X-direction resistor film 5 and the Y-direction resistor film 7. , ⁇ '.
- the optical position detecting element 4 is arranged so as not to be in direct contact with the X-directional resistive film 5 and the longitudinal resistive film 7 via the photoconductive film 6. Under normal conditions (in a state where the optical spot ⁇ is not hit), the X-direction resistor film 5 and the ⁇ -direction resistor film 7 are kept substantially insulated by the photoconductive film 6.
- the X-direction strip-shaped counter electrodes 51 and 52 having a lower resistance than the X-direction resistor film 5 are used.
- the ⁇ and ⁇ ′ the ⁇ -direction band-shaped counter electrodes 71 and 72 having a lower resistance value than the ⁇ -direction resistance film 7 are used.
- the X-direction strip counter electrodes 51 and 52 and the ⁇ -direction strip counter electrodes 71 and 72 are The X-direction resistor film 5 and the Y-direction resistor film 7 are arranged on two opposing sides so as to be orthogonal to each other.
- FIG. 6 is a diagram showing a layer structure of the optical position detecting element 4
- FIG. 7 is a diagram showing a ni-p-i-n layer structure of the photoconductive film 6.
- X-axis resistor film 5 is made of S n 0 2 thick 6 0 0 A, and the sheet resistance value 2 0 0 ⁇ / cm 2.
- the necessary functions of the X-direction resistive film 5 are to transmit sunlight and have an appropriate sheet resistance value so as to form a predetermined voltage gradient between the X-direction band-shaped counter electrodes 51 and 52. That is. Accordingly, as the material may be other metal oxide film such as Z n 0, ITO besides 2 S n 0.
- the reason for this is that if the sheet resistance value of the X-direction resistive film 5 is too low, there will be no difference between the resistance values of the X-direction band-shaped counter electrodes 51 and 52, and the antibody will not be an antibody.
- the sheet resistance value of the X-direction resistor film 5 becomes too high, the resistance value of the photoconductive film 6 when irradiated with solar light (about 500 ⁇ / cm 2 or more for a-Si) Higher than 1 k Q / cni 2 ), and no output can be obtained.
- the photoconductive film 6 has an n-i-P-i-n layer structure or p-i-n-i on an X-direction resistor film 5 on which an amorphous silicon (hereinafter a-Si) alloy film or the like is formed.
- a-Si amorphous silicon
- the photoconductive film 6 is composed of an n-type semiconductor film 61, a-Si, an i-type semiconductor film 62, a-SiC (amorphous silicon carbide), and a p-type semiconductor film.
- 6 3 is formed of a—SiC (amorphous silicon carbide)
- i-type semiconductor film 64 is formed of a—Si (amorphous silicon)
- n-type semiconductor film 65 is formed of a—Si 5 From layers Become. This structure is equivalent to two diodes connected in opposite directions.
- the photoconductive film 6 is required to be a film that changes only to a very low resistance when irradiated with the light spot H.
- the thickness of the i-type semiconductor film 62 on the light incident side is made smaller than the thickness of the i-type semiconductor film 64, and a-SiCs having different spectral sensitivities are used. Note that the ratio between the thickness of the i-type semiconductor film 62 and the thickness of the i-type semiconductor film 64 is in the range of 1: 2 to 1:10.
- the Y-direction resistor film 7 was made of Ti having a thickness of 400 A, and had a sheet resistance value of 200 ⁇ / cm 2 .
- the Y-direction resistor film 7 may be basically the same as the X-direction resistor film 5, but does not need to transmit solar light at all. Therefore, if the sheet resistance value is 1 O QZcm 2 or more and ⁇ ⁇ / cm 2 or less, metals such as Ti, Cr, and Ni other than the materials usable for the X-direction resistive membrane 5 can be used. , TiN, Ag paste, Ni paste, and Cu paste may be used.
- the X-direction strip-shaped counter electrodes 51 and 52 are formed on two opposite sides of the X-direction resistive film 5, and are patterned as a conductive thin film by A1 or the like. I have.
- the material of the X-direction strip counter electrodes 51 and 52 may be Cr, Ni, Ag or the like in addition to A1.
- the Y-direction band-shaped counter electrodes 71 and 72 are arranged such that the voltage application direction is orthogonal to the X-direction band-shaped counter electrodes 51 and 52. It is formed on the upper two opposite sides, and is patterned as a conductive thin film by A1 or the like in the same manner as the X-direction strip-shaped counter electrodes 51 and 52.
- the material of the Y-direction strip counter electrodes 71, 72 may be Cr, Ni, Ag, etc. in addition to A1, but is the same as the material of the X-direction strip counter electrodes 51, 52. Is desirable.
- FIG. 10 is a diagram illustrating the operating principle of X-coordinate detection, y-coordinate detection, and photocurrent detection of the optical position detecting element.
- a voltage of 5 V is applied to each of the X-direction band-shaped counter electrodes 51 and 52 to distribute the same potential on the X-direction resistive film 5, and the optical position detecting element 4 irradiated with the optical spot H is applied.
- An output current (photocurrent) flowing from the X-direction resistor film 5 to the Y-direction resistor film 7 at a point P (X, y) on the detection surface 40 is detected.
- This output current does not change regardless of which position of the X-direction resistor film 5 is irradiated with the light spot H (since the X-direction resistor films 5 are all at the same potential), and changes according to the solar radiation intensity. It becomes an electric signal.
- any of the X-direction resistor film 5 and the Y-direction resistor film 7 can be used. Even if an n-type semiconductor film is used, it is possible to detect the solar radiation intensity. Therefore, even if a voltage of 5 V is applied to the Y-direction band-shaped counter electrodes 71 and 72 on the Y-direction resistor film 7 side, the solar radiation intensity can be detected.
- FIG. 11 is a diagram showing the principle of detecting the solar radiation position of the omnidirectional solar radiation sensor 1. Assuming that the angle at which solar light enters the pinhole 31 of the light-shielding film 3, that is, the solar elevation angle, is 0, the angle of the point P (x, y) of the light spot H incident on the glass substrate 2 is 0 '. That is, the light spot H reaches the point P (X, y) on the detection surface 40 of the light position detection element 4 at an angle of ⁇ ′.
- the angle between the ⁇ axis on the detection surface 40 of the optical position detection element 4 and the point P (x, y), that is, the solar azimuth angle ⁇ is the point P (x, y) of the optical spot H.
- Do is calculated on the basis of the following equation on the basis of the above output voltage detected by the corresponding (V x, V).
- the photoconductive film 6 is etched on the back surface of the rectangular glass substrate 20.
- the X-direction strip counter electrodes (A1 electrode) 51, 52 and the Y-direction strip counter electrode (A 1 ) are formed on the back surface of the glass substrate 20.
- light-shielding ink is screen-printed on the surface of the glass substrate 20 to form the light-shielding film 3 having the pinholes 31 shown in FIG. 4 in the pattern shown in FIG. Form on top.
- the glass substrate 2 and the X-direction resistor film 5 are made of a transparent material, even when the glass substrate 20 is viewed from the front side, the glass is interposed between the glass substrate 2 and the X-direction resistor film 5. It is possible to identify the four alignment marks 4a to 4d on the back side of the substrate 20.
- a number of light-shielding films 3 and alignment marks 3a to 3d are formed on the surface of the glass substrate 20, and the alignment marks 3a to 3d are aligned with the alignment marks 4a as partially shown in FIG.
- the screen is printed so as to coincide with ⁇ 4d, so that the zero point P (0,0) of the detection surface 40 of the light position detection element 4 and the center point 0 of the pinhole 31 of the light shielding film 3 are misaligned. do not do.
- the glass substrate 20 is cut into a glass substrate of a predetermined shape (refer to FIG. 2, FIG. 3, FIG. 6) by a glass cutter (not shown). And the omnidirectional solar radiation sensor 1 as shown in FIG. 7 is manufactured.
- the light shielding film 3 and the light position detecting element 4 are integrally formed on the front surface and the back surface of the glass substrate 20 by the above-described manufacturing method.
- the zero point P (0, 0) of the detection surface 40 of the light position detection element 4 can be made to coincide with the center point 0 of the pinhole 31 of the light shielding film 3.
- the center point (0) of the light spot H and the light position detecting element 4 are detected.
- the structure of a control circuit such as a light position detection circuit and an arithmetic circuit can be simplified, and the zero point of the detection surface 40 of a large number of light position detection elements 4 and the center point of the pinhole 31 Since 0 can be matched in one manufacturing operation, the manufacturing cost of the omnidirectional illumination sensor 1 can be reduced.
- a solar radiation sensor is also used as the optical sensor.
- FIG. 12 is a diagram showing the omnidirectional solar radiation sensor 1 in the second embodiment.
- the omnidirectional solar radiation sensor 1 is an optical position detecting element comprising an X-direction light position detecting element 41, a Y-direction light position detecting element 42, and photocurrent detecting elements 43 to 45 on one surface of a glass substrate 2. 4 is formed by patterning by etching or the like, and a light-shielding film 3 having a light-shielding film 32 having cross-shaped light transmitting holes 32 on the opposite surface of the glass substrate 2 is screen-printed.
- a predetermined position 3 2 1 of the cross-shaped light transmitting hole 32 is matched with a predetermined position 4 3 1 of the photocurrent detecting element 4 by an alignment mark (not shown). Positioned.
- the transparent conductive film forming the X-direction light position detection element 41 and the Y-direction light position detection element 42 functions as a resistive film that generates a voltage gradient from 0 V to 5 V in the plane direction, and
- the transparent conductive film constituting the current detecting elements 43 to 45 becomes an electrode for uniformly applying a voltage of 5 V to the entire surface of the photoconductive film.
- the optical sensor may be used for a throttle position sensor or may be used for an optical position detecting device such as a photoelectric switch.
- the so-called voltage type which detects the position of light by arbitrarily switching the voltage application to the X-direction band counter electrode and the Y-direction band counter electrode has been described.
- the present invention is applied to a so-called current type in which the position of light is detected based on the ratio of the current output from each of the X-direction band counter electrode and the Y-direction band counter electrode without arbitrarily switching the voltage application. You can also.
- the present invention can also be applied to a device for detecting only the direction of light.
- the photoconductive film 6 having an n-i-p-i-n-layer structure is used as the photoconductive film. May be used, and a photoconductive film having a pin layer structure may be used. Further, a photoconductive film having a pn layer structure may be used. When the operating temperature of the optical sensor is 65 ° C. or less, a photoconductive film composed of only a single i-layer may be used.
- a large number of light shielding films 3 and light position detecting elements 4 are formed on the glass substrate 20 at one time. 3 and the light position detecting element 4 may be formed.
- the alignment marks 3a to 3d have the alignment mark Any shape can be used as long as the shape is almost the same as 4a to 4d.
- the material of the alignment marks 3 a to 3 d and 4 a to 4 d may be the same as the light shielding film 3 and the light position detecting element 4 as in the above embodiments, or may be different. Furthermore, the alignment marks 3a to 3d and 4a to 4d need only be two or more.
- the circular pinhole 31 and the cross-shaped light transmitting hole 32 are used as the light transmitting hole, but the polygonal, elliptical, and elliptical light transmitting holes are used as the light transmitting hole. Holes may be used. Further, a plurality of light transmitting holes may be provided.
- the light-shielding film 3 is formed on the surface of the glass substrate 2 after forming the optical position detecting element 4 on the back surface of the glass substrate 2. After the light-shielding film 3 is formed, the light position detecting element 4 may be formed on the back surface of the glass substrate 2.
- the glass substrate 2 is used as the transparent body, but a transparent material such as a resin may be used.
- the present invention can be used as an optical sensor for detecting a position, a direction, and the like of light, including a solar radiation sensor that is provided in a vehicle cabin and detects the direction, altitude, intensity, and the like of sunlight entering the vehicle cabin. Things.
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- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
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- Microelectronics & Electronic Packaging (AREA)
- Radar, Positioning & Navigation (AREA)
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Description
Claims
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
EP94908110A EP0613183B1 (en) | 1992-08-21 | 1993-08-19 | Optical sensor and method of its manufacture |
US08/211,823 US5517017A (en) | 1992-08-21 | 1993-08-19 | Photosensor for detecting the position of incident light in two dimensions using a pair of film resistors and a photoconductive element sandwiched therebetween |
DE69315323T DE69315323T2 (de) | 1992-08-21 | 1993-08-19 | Optische sensor und verfahren zu seiner herstellung |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP4/223038 | 1992-08-21 | ||
JP22303892A JPH0669536A (ja) | 1992-08-21 | 1992-08-21 | 光位置検出装置の製造方法 |
Publications (1)
Publication Number | Publication Date |
---|---|
WO1994005044A1 true WO1994005044A1 (en) | 1994-03-03 |
Family
ID=16791873
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/JP1993/001165 WO1994005044A1 (en) | 1992-08-21 | 1993-08-19 | Optical sensor and method of its manufacture |
Country Status (5)
Country | Link |
---|---|
US (1) | US5517017A (ja) |
EP (1) | EP0613183B1 (ja) |
JP (1) | JPH0669536A (ja) |
DE (1) | DE69315323T2 (ja) |
WO (1) | WO1994005044A1 (ja) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5602384A (en) * | 1992-11-06 | 1997-02-11 | Nippondenso Co., Ltd. | Sunlight sensor that detects a distrubition and amount of thermal load |
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US7145121B1 (en) * | 2000-08-11 | 2006-12-05 | Cook Jr Koy B | Monolithic silicon integrated circuit for detecting azimuth and elevation of incident radiation and method for using same |
US20040217258A1 (en) * | 2003-04-30 | 2004-11-04 | Clugston P. Edward | Solar sensor including reflective element to transform the angular response |
US7585068B2 (en) * | 2004-12-03 | 2009-09-08 | Dynamic Eye, Inc. | Method and apparatus for calibrating glare-shielding glasses |
EP2008307A2 (en) * | 2006-03-24 | 2008-12-31 | Nederlandse Organisatie voor toegepast- natuurwetenschappelijk onderzoek TNO | Light sensor |
KR101633612B1 (ko) * | 2007-10-26 | 2016-06-27 | 코닌클리케 필립스 엔.브이. | 광각 선택 광 검출기 장치 |
EP2806456A4 (en) * | 2012-03-29 | 2015-03-18 | Asahi Kasei Microdevices Corp | LIGHT RECEIVING DEVICE |
JP6051399B2 (ja) * | 2014-07-17 | 2016-12-27 | 関根 弘一 | 固体撮像装置及びその製造方法 |
CN106791086B (zh) * | 2016-12-19 | 2020-01-14 | 维沃移动通信有限公司 | 一种移动终端的控制方法及移动终端 |
JP6842169B2 (ja) * | 2017-07-11 | 2021-03-17 | 国立研究開発法人宇宙航空研究開発機構 | シート状構造体、形状推定方法、及び宇宙機 |
Citations (2)
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JPH0119107Y2 (ja) * | 1982-12-28 | 1989-06-02 | ||
JPH0552921B2 (ja) * | 1985-04-30 | 1993-08-06 | Toray Industries |
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US4018532A (en) * | 1975-09-24 | 1977-04-19 | Nasa | Sun direction detection system |
JPS5664611A (en) * | 1979-10-31 | 1981-06-01 | Nec Corp | Device for measuring solar angle |
JPS5688364A (en) * | 1979-12-20 | 1981-07-17 | Seiko Epson Corp | Semiconductor device |
JPS57173256A (en) * | 1981-04-20 | 1982-10-25 | Nippon Telegr & Teleph Corp <Ntt> | Image sensor |
JPS6057780A (ja) * | 1983-09-07 | 1985-04-03 | Toshiba Corp | 固体撮像装置およびその製造方法 |
US4727407A (en) * | 1984-07-13 | 1988-02-23 | Fuji Xerox Co., Ltd. | Image sensor |
JP2566910B2 (ja) * | 1985-08-19 | 1996-12-25 | 鐘淵化学工業株式会社 | 平面センサ− |
JPS6271713A (ja) * | 1985-09-26 | 1987-04-02 | Diesel Kiki Co Ltd | 自動車用空調装置の日射方向検出装置 |
JPS62140407A (ja) * | 1985-12-16 | 1987-06-24 | Canon Electronics Inc | ロ−タリ−トランス |
JPS62211506A (ja) * | 1986-03-12 | 1987-09-17 | Toshiba Corp | デジタル太陽センサ |
JPH0640023B2 (ja) * | 1986-09-25 | 1994-05-25 | 株式会社神戸製鋼所 | 光入力の位置・分散検出方法および装置 |
US4879470A (en) * | 1987-01-16 | 1989-11-07 | Canon Kabushiki Kaisha | Photoelectric converting apparatus having carrier eliminating means |
JPS63278284A (ja) * | 1987-05-09 | 1988-11-15 | Fujitsu Ltd | 二次元光位置検出装置 |
JP2554119B2 (ja) * | 1988-02-26 | 1996-11-13 | 株式会社日立製作所 | 自動車空調用日射センサー |
JPS6419107A (en) * | 1988-04-02 | 1989-01-23 | Sanshin Kogyo Kk | Separated lubricating device for outboard motor |
SE462665B (sv) * | 1988-12-22 | 1990-08-06 | Saab Scania Ab | Givare till en klimatanlaeggning foer fordon |
JP3123172B2 (ja) * | 1991-02-26 | 2001-01-09 | 株式会社デンソー | 光の位置と強さを検出する装置 |
US5324929A (en) * | 1991-02-26 | 1994-06-28 | Nippondenso Co., Ltd. | Device for detecting position and intensity of light and position detecting element to be employed therein |
JPH04343276A (ja) * | 1991-05-20 | 1992-11-30 | Nippondenso Co Ltd | 光位置検出装置 |
-
1992
- 1992-08-21 JP JP22303892A patent/JPH0669536A/ja active Pending
-
1993
- 1993-08-19 US US08/211,823 patent/US5517017A/en not_active Expired - Lifetime
- 1993-08-19 EP EP94908110A patent/EP0613183B1/en not_active Expired - Lifetime
- 1993-08-19 WO PCT/JP1993/001165 patent/WO1994005044A1/ja active IP Right Grant
- 1993-08-19 DE DE69315323T patent/DE69315323T2/de not_active Expired - Fee Related
Patent Citations (2)
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JPH0119107Y2 (ja) * | 1982-12-28 | 1989-06-02 | ||
JPH0552921B2 (ja) * | 1985-04-30 | 1993-08-06 | Toray Industries |
Non-Patent Citations (1)
Title |
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See also references of EP0613183A4 * |
Cited By (1)
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US5602384A (en) * | 1992-11-06 | 1997-02-11 | Nippondenso Co., Ltd. | Sunlight sensor that detects a distrubition and amount of thermal load |
Also Published As
Publication number | Publication date |
---|---|
EP0613183A1 (en) | 1994-08-31 |
DE69315323D1 (de) | 1998-01-02 |
DE69315323T2 (de) | 1998-04-02 |
JPH0669536A (ja) | 1994-03-11 |
EP0613183A4 (en) | 1994-11-17 |
EP0613183B1 (en) | 1997-11-19 |
US5517017A (en) | 1996-05-14 |
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