WO1991012629A1 - Installation amelioree de transfert et de traitement des tranches - Google Patents

Installation amelioree de transfert et de traitement des tranches Download PDF

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Publication number
WO1991012629A1
WO1991012629A1 PCT/NL1991/000025 NL9100025W WO9112629A1 WO 1991012629 A1 WO1991012629 A1 WO 1991012629A1 NL 9100025 W NL9100025 W NL 9100025W WO 9112629 A1 WO9112629 A1 WO 9112629A1
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WO
WIPO (PCT)
Prior art keywords
chamber
cleaning
section
wafer
medium
Prior art date
Application number
PCT/NL1991/000025
Other languages
English (en)
Inventor
Edward Bok
Ronald Johannus Wilhelmus Barlag
Original Assignee
Edward Bok
Barlag Ronald Johannus Wilhelm
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Edward Bok, Barlag Ronald Johannus Wilhelm filed Critical Edward Bok
Priority to KR1019920701972A priority Critical patent/KR920704332A/ko
Publication of WO1991012629A1 publication Critical patent/WO1991012629A1/fr

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
    • H01L21/67161—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the layout of the process chambers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
    • H01L21/67051—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing using mainly spraying means, e.g. nozzles
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
    • H01L21/67057—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing with the semiconductor substrates being dipped in baths or vessels
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
    • H01L21/67161—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the layout of the process chambers
    • H01L21/67167—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the layout of the process chambers surrounding a central transfer chamber
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
    • H01L21/67784—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations using air tracks

Definitions

  • the invention relates to apparatus and methods, wherein the following takes place:
  • Advanced all-sided wafer cleaning taking place within a mini cleaning chamber without any mechanically displacing component in this chamber provides an improved wafer cleaning condition.
  • This apparatus has the following shortcomings:
  • the wafer cleaning system including the cylindrical discharge passage and gaseous lock compartment,are at least temporary sealed off from the outer air.
  • these sealing-off sections for the greater part function as wafer transfer wall sections of these blocks on both sides of the established wafer transfer passage in between these blocks.
  • the future sub-micron wafer processing consisting of at least 500 processing steps, with mostly a pre- and/or post cleaning of the wafer to be processed, does not allow such deposition of contaminants on the wafer. Consequently, such repeated deposition of sub micron contaminants on the wafer has to be avoided as much as possible to contribute to a highest possible wafer yield.
  • the average height of such gaps is minimal, for instance only 3 ⁇ m, with possibly large deviations therein due to machining tolerances for the cooperating components and local differences in temperature and pressure.
  • stop walls are used, against which the central section of such chamber block is urged during the wafer cleaning, with the creation of micro cylindrical discharge gaps in between the cleaning chamber and the discharge passage and in between this passage and the gaseous lock compartment.
  • a pulsator chamber wherein one or more pulsators are located, with therein a thrust medium, providing a contra thrust for the pressure of the cleaning medium in the cleaning chamber.
  • a first aggressive cleaning medium is urged from the cleaning chamber by a following flow of less aggressive medium, as for instance deionized water, and whether or not in between by a flow of gaseous medium.
  • this cleaning module in particular is suitable for an at least combined cleaning of the wafer under atmosoheric and negative pressure, whereby gaseous and vaporized medium is used in whether or not a combination thereof.
  • this module is suitable for at least temporary de-hydration bake, with the removal of moisture from this wafer.
  • the medium in the pulsator chamber exercises a sealing-off thrust on the pulsating central chamber block section and membrane section, through which in case of such pressure drop immediately a narrowing of this gap section is accomplished, in particular at this membrane section, with the restoring of the thrust balance at this gap section and an at least reduced discharge of the medium.
  • a following favorable feature is, that the opening and sealing-off of the discharge gap at the membrane sealing off section mainly takes place by means of established differences in pressure of the mediums, acting on both sides of this membrane section.
  • the membrane sealing-off section is located nearby the membrane side, nearest to the discharge passage.
  • the level of the pressure in the discharge gap at the cleaning chamber side has become aflnost independent from the level of the pressure in the discharge gap at the dischargepassage side of this sealing- off section.
  • the module is provided with a stpp/buffer system for the pulsating central chamberblock section for limiting the maximum height of the cleaning chamber.
  • a stop wall is located, against which the central chamber block section with a corresponding stop section is urged, with in between a medium layer, the thickness of which depends on the thrust of the cleaning medium in the cleaning chamber,applied thereon.
  • the pressure in the cleaning chamber is at least temporary independent from the pressure in the pulsator chamber and also from the pressure in the discharge passage.
  • the enclosed moisture within the wafer causes contaminants, because this moisture during such wafer processing escapes through the wafer processing side or remains enclosed, with the creation of unallowable deformations in the sub-micron line configuration.
  • the air contains sub-micron contaminants, which cannot be removed adequately by means of filters.
  • the enclosure is accessible from a compartment underneath, containing air.
  • the module also contains a buffer for damping the vibrations of such pulsator at the stationary side thereof and whereby use is made of the thrust medium within the pulsator chamber as medium buffer in between the pulsator wall and a contra wall.
  • Figure 1 is a longitudinal sectional view of a cleaning module of the apparatus according to the invention.
  • Figure 2 is a sectional view over the line 2-2 of the module according to Figure 1.
  • Figure 3 is a sectional view over the line 3-3 of the module according to Figure 1.
  • Figure 4 is a longitudinal sectional view of a modification of the module according to Figure 1.
  • Figure 5 is still another module, whereby the pulsating reciprocation of the central upper chamber block section is established by means of supply and discharge of liquid medium toward and from an upper compartment as pulsator chamber.
  • Figure 6 is a module, wherein also the central lower chamber block is pulsating.
  • Figure 6 A discloses for the module according to Figure 6 the medium discharge toward the discharge passage and the medium supply toward the gaseous lock compartment.
  • Figure 6 B discloses for the module according to Figure 6 cooperating vibrations of both central sections of the chamber blocks.
  • Figure 7 shows enlarged part of the wafer cleaning and medium discharge section of the module according to Figure 1.
  • Figure 7 A shows a pressure diagram for the section according to Figure 7.
  • Figure 7 B shows an enlarged part of the section according to Figure 7 at the membrane section.
  • Figure 7 C shows in part a sectional view of the walls of the medium discharge gap, on which a teflon lining is anchored.
  • Figure 8 A shows at the membrane section the discharge of cleaning medium during the upward displacement of the central upper chamber block section.
  • Figure 8 B shows for the section according to Figure 8 A the sealed-off discharge gap during the compression stroke in downward direction.
  • Figure 8 C shows the upper chamber block, with at the central section of the membrane a mini lowered cylindrical section for sealing-off.
  • Figures 9 A through 9 C show for a modified medium discharge section the arrangement of two membrane sections, with in between a sealing-off wall, and with several positions of this section during tha module operation.
  • Figures 10 A and 10 B show enlarged part of the sectional view according to Figure 7, with the membrane section in an open and sealed-off position
  • Figures 10 C and 10 D show enlarged part of the sectional view according to Figure 7 near the cleaning chamber in open and almost sealed-off position.
  • Figures 11 A through 11 D show enlarged successive medium charge positions and the subsequent wafer cleaning position of the central upper chamber block section.
  • Figure 12 A and Figure 12 B in an enlarged view show the medium discharge section of the module according to Figure 4, with a temporary sealing-off of the cleaning chamber.
  • Figure 12 C and Figure 12 D in an enlarged view show the section according to Figure 12 A with a medium discharge from the cleaning chamber.
  • Figure 13 A shows for the module according to Figure 1 the medium charge of the sealed off cleaning chamber by means of a reciprocating stop wall arrangement of the central upper chamber block section as volume limiter.
  • Figure 13 B shows enlarged the medium charge system according to Figure 13 A .
  • Figure 14 A shows for the module section according to Figure 13 A by means of the volume limitation of the cleaning chamber with the reciprocating stop wall of the central upper chamber block section the creation of a difference in pressure between the cleaning chamber and the pulsator chamber to establish the medium discharge.
  • Figure 14 B shows enlarged the sealing-off system according to Figure 14 A .
  • Figure 15 shows enlarged the buffer and stop sections of the pulsating central block section of the module according to Figure 1.
  • Figure 16 A shows enlarged the section according to Figure 15 in its wafer cleaning position.
  • Figure 16 B shows in this wafer cleaning position on an enlarged scale the small vibration amplitude of the sections on top of the pulsators with regard to the vibration amplitude of the chamber upperwall, as shown in Figure 16 C .
  • Figure 17 A shows enlarged the system according to Figure 13, whereby by means of the stop wall arrangement for the central upper chamber block section a medium charge under high pressure takes place for the cleaning chamber.
  • Figure 17 B shows enlarged the system according to Figure 13, whereby by means of the stop wall arrangement a considerable reduction of the pressure in the cleaning chamber is established.
  • Figure 17 C shows the system according to Figure 17 B , with a pressure drop from overpressure toward a negative pressure.
  • Figures 18 A through 18 E show for the module according to Figure 1 successive sive transfer positions for a wafer, to be cleaned.
  • Figures 19 A through 19 C show for the module according to Figure 1 modified wafer transfer positions for a wafer, to be cleaned.
  • Figure 20 shows the centering of the wafer toward within a recess of the vibrating upper chamber wall by means of a scissor movement of this wall.
  • Figure 21 is an enlarged part of the module-section according to Figure 20 at this scissor movement.
  • Figure 22 is a sectional view over the line 22-22 of the section according to Figure 21.
  • Figures 23 A through 23 D show the take-over system of the cleaned wafer by means of a robot arm from its suctioned position against the upper chamber wall.
  • Figures 24 through 26 show enlarged wafer cleaning under overpressure for the module according to Figure 1.
  • Figures 27 and 28 show enlarged wafer cleaning under vacuum for the module according to Figure 1.
  • Figure 29 is a longitudinal sectional viw of the apparatus according to the invention, wherein within an isolated compartment, filled with an inert gas, a number of wafer cleaning modules are arranged together with processing stations for wafer processing under high vacuum.
  • Figure 30 is an enlarged detail of the apparatus according to Figure 29.
  • Figure 31 is a detail of another configuration of the apparatus, wherein lithography oriented wafer processings take place.
  • Figure 32 is a transverse sectional view of another configuration, where- in a combination of wafer processings under high vacuum and lithography oriented wafer processings take place.
  • Figure 33 shows a modified configuration of the apparatus according to Figure 32 in a transverse sectional view.
  • FIGs 1 and 29 the wafer transfer and processing apparatus 10 is shown.
  • its wafer cleaning module 12 mainly consists of the lower chamber block 20, upper chamber block 22, cleaning chamber 24, located in between for cleaning of the wafer 26, cylindrical discharge passage 28, located aside this cleaning chamber for discharge of the cleaning medium 30, gaseous lock compartment 48 aside this passage 28, pulsators 32 for the reciprocating disolacements of the central upper chamber block section 34 as upper wall of chamber 24 and the membrane section 96.
  • the upper mounting plate 86 is connected with mounting plate 82 by means of its two sections 88, see also Figure 2.
  • the upper pulsator block 92 is secured to the lower side of this mounting plate 86.
  • the outer section 94 of the upper chamber block 22 is mounted against the lower side of this pulsator block 92. Thereby this block is provided with recess 102 as part of the cleaning chamber 24.
  • piezo transducers are located within the pulsator chamber 98.
  • the wafer transfer see Figures 18 through 23, is as follows:
  • the robot arm 44 is moved from underneath this chamber block 22, Figure 19 D , and thereafter this block 22 is moved downward toward against lower chamber block 20 by means of medium supply toward all bellows, whereby the lower side of the wafer enters the chamber recess 150.
  • the chamber block 22 is brought to an inclined position and whereby the arriving wafer comes to a stop against the sidewall 112 of the chamber recess 102 of this block, see Figure 19 A , with an accomplished centering of the wafer, see Figures 20 through 22.
  • FIG 7 the module 12 according to Figure 1 1 is shown at the cleaning chamber 24 and the medium discharge gap. Thereby wafer cleaning in this chamber takes place by means of cleaning medium 30, with an urging against each other of the stop wall sections 114and 116, and an at least almost sealing-off position of the combinations of wall sections 130 and 132, 134 and 136 and 138 and 140 of these blocks.
  • these blocks can be produced from any suitable material, such as titanium for the upper chamber block 22.
  • the central supply channel 70 for cleaning medium 30 is located, whereas in the upper chamber block 22 channel 72 for cleaning medium 30 and/or gaseous medium 50 is positioned.
  • the wall section 130 consists of the section 146 in between the cleaning chamber 24 and the membrane section 96 and the section 148 in between this membrane section and the discharge passage 28.
  • This chamber 24 is to a small extent larger than the thickness of the wafer, for instance approximately 100 ⁇ m, see Figure 11 A .
  • both lower chamber block 20 and upper chamber block 22 are high-precision machined and flat. With the stop position of the module wall 114 and 116, see also Figure 2, the other wall sections are only over a micro distance removed from each other, as for instance 2-5 ⁇ m for the sections 130/132, 134/136 and 138/140.
  • the discharge capacity of the discharge passage 28 through 8 branched channels is that considerable, that during the wafer cleaning with a set discharge pressure the differences in pressure, established by means of medium discharges, are limited to maximal 0,01 bar.
  • both chamber 24 and discharge gap 156 are charged with medium until the original height of gap 156 is reached, with a recovery of the discharge of finished-off medium from chamber 24, as therein fresh cleaning medium is supplied through both channels 70 and 72.
  • the volume of the pulsator chamber is considerable, it is desirable, that with successive changes in pressure for the wafer cleaning, as from overpressure toward negative pressure, the pressure in this chamber is regulated and by means of sensor 212 a corresponding pressure in the discharge passage 28 is established.
  • such sensor is connected with the discharge passage, providing impulses toward the supply and discharge system of pulsator chamber 98.
  • the total weight of the central upper chamber block section 34 preferably produced from titanium, and including the pulsators 32, is extremely low, approximately 4 KG for an8" wafer, with a resulting added downward thrust on this block section of approximately 0,01 bar. Consequently, the contra-pressure within the combination of cleaning chamber 24 and discharge gap 156 has to be an additional 0,01 bar higher.
  • this medium discharge can be local.
  • a reduction of the pressure in the discharge passage with regard to the pressure within the pulsator chamber results in a reduction of the upward thrust of the medium in the discharge gap 212 underneath the membrane sec-, tion. With a very large drop in pressure even a temporary downward mini bending from the membrane end 214 on is accomplished. Thereby finally the central membrane section 152 is urged against the section 154 of the lower chamber block 20, see Figure 7 B and enlarged Figure 9 A .
  • this sealing-off section over a micro distance is displaced from section 154, with a discharge of the cleaning medium from chamber 24 through both discharge gaps 156 and 158, together with the accomplished discharge gap section 160, as shown in Figures 7, 9 A ,
  • this rinse medium takes care of the removal of this medium 30 from this discharge passage 28.
  • the lower chamber block 20 in lateral direction beyond the gaseous lock compartment 48' is provided with the membrane section 76, with the creation of the central lower chamber block section 172 and the outer mounting section 80.
  • This mounting section is airtight secured to support plate 82, with the creation of thrust chamber 36.
  • this central block section 172 is urged downward, whereby the height of discharge gaps 156', 158', 160', 166' and 168' is increased.
  • this thrust chamber 36 As the thrust medium in this thrust chamber 36 is a liquid, with a discharge of a small amount thereof by means of regulator-arrangement 180, a downward displacement takes place of this block section, whereby its stop wall 176 is urged against the stop wall 84 of the support plate 82.
  • both supply orifices 186 are located, with such inclined position thereof with regard to chamber 24, that by means of supply of medium 50 a thrust on the floating wafer 26 is maintained in radial direction, with a resulting rotation of this wafer. Such to establish a uniform cleaning.
  • the orifice 124 of both supplies 70 and 72 contains a saphire orifice 188 with a small passage, preferably smaller than 0,1 mm, see Figure 7.
  • Figures 24 A , 24 B and 24 C an imploding action takes place of the sub-micron vacuum bubbles and during the expansion stroke an exploding action of these bubbles, Figures 24 D , 24 E and 24 F .
  • every succession of different cleaning mediums is possible, as after an aggressive medium a less aggressive medium and finally no aggressive medium, with any medium in gaseous, vapor or liquid phase and whether or not in combination and whereby such cleaning under overpressure can be changed into cleaning under negative pressure or oppositely.
  • the piezo pulsators are connected with the modulator 196, whereby at least the amplitude of the vibrations can be regulated.
  • Buffer arrangement 218 on top of the pulsators 32 provide a stop for restriction of the upward displacement of the pulsators.
  • the modules are provided with a cylindrical stop wall 200 as lower wall of the downward extension 224 of the upper pulsator block 92.
  • the central upper chamber block section 34 is provided with stop wall 202.
  • the height of the cleaning chamber 24 is maximal, for instance 50 urn larger than the average height thereof during the wafer cleaning under pulsating action of this block section 34.
  • the height of the discharge gap 156 is maximal, see Figure 15.
  • the bottom side of the upper mounting plate 86 provides buffer wall sections 218, and whereby the top section of the pulsators provide the contra buffer walls 220.
  • stop wall combination 200/202 or buffer combination 218/220 is used.
  • module 12" is shown. Thereby the reciprocating displacement of the central upper chamber block section 34" under pulsating condition takes place by means of liquid medium 104, supplied into pulsator chamber98" and discharged therefrom by means of whether or not a plurality of plunger- cylinder arrangements 230. Thereby such supply through whether or not a single supply/discharge channel 232 in the top of this chamber.
  • the frequency of these vibrations can be considerable, approximately 50 Herz for a 40 ⁇ m amplitude and 100 Herz for a 20 ⁇ m amplitude.
  • This module is extremely suitable for cleaning under high pressure by means of the combination of an inert gas, as N 2 , and a super critical fluid, as CO 2 or even solely CO 2 .
  • stop wall 200" of the upper block 92" is for a relatively great distance removed from the stop wall 202" of the block section 34 in its lowest position, for instance 100 ⁇ m.
  • the cleaning gaps 190" and 192" for such module 12" have an average height of for instance only 60 um, with consequently, by means of displacements of this block section 34" of 50 ⁇ m the creation of very great differences in pressure in these gaps, with during the upward expansion stroke the transfer of at least part of the ultra-fine atomized liquid into gaseous phase, and during the compression stroke the transfer of such medium in gaseous phase into ultra-fine atomized liquid.
  • the height of the discharge gap 156" is also considerably enlarged, with a temporarily increased discharge of the cleaning medium from chamber 24", as for the expulsion of the finished-off cleaning medium from this chamber by means of gaseous medium.
  • the wafer cleaning as is shown in Figures 24 through 28, is applicable in a form, adapted there. Tnereby such cleaning action can be followed by another wafer processing, as for instance oxidation or de-hydration bake.
  • FIG 29 the installation 310, see also Figure 1, for wafer transfer, processing, storage and diagnose under a contamination controlled condition is shown.
  • This installation thereby mainly consists of the wafer transfer/processing compartments 314 and 316, with the adjacent wafer transfer/, de-gassing / storage/diagnose compartments 318 and 320, situated in a chip production plant.
  • the floor 340 is located, functioning thereby as a horizontal separation wall in between the upper compartment 330 and the lower compartment 352, see Figure 32.
  • Modules 326 and 328 for wafer transfer and all-sided wafer cleaning as are shown in Figures 1 , 4 or 5, in adapted configuration are mounted against the vertical separation wall sections 336 and 338.
  • This vertical separation wall 324 and the other vertical wall sections extend in upward direction from this floor 340 toward at least beyond the wafer transfer zone 362, causing the compartments 314, 316, 318 and 320, together with the corridor 364, to be separated at this transfer zone in horizontal direction.
  • compartments 314, 316, 318 and 320 extend in upward direction toward into operator room 334 and whereby the upward sealing-off is accomplished by means of the cover sections 346, connected against the ceiling 354 of this room 334, see Figure 32.
  • a wafer transfer robot 354 is located for supply and discharge of wafers 26 toward and from the cleaning modules 326 and 328, diagnostic stations 342 and series of wafer storage/degassing modules.
  • the filter houses 358 for inert gas which is lighter than air, as N 2 , are secured and connected with a common supply duct 366 for this inert gas as upper medium 368. Furthermore, by means of supply duct 374 supply of air as lower medium 372 takes place toward filter houses 370, providing air toward corridor 364.
  • Corridor 364 consists of the central corridor section 376, extending in longitudinal direction of the installation, and the branched corridor sections 378, located in between successive wafer transfer/processing compartments.
  • level regulator 380 in these corridor sections the separation level 382 between both mediums 368 and 372 is kept on a level, located some distance underneath wafer transfer zone 362.
  • floor 340 the man holes 384 are located and whereby on top of these holes the person enclosures 386 are arranged.
  • compartment 352 the person elevators 388 are located for displacement of a person toward and from this floor 340.
  • the lower section 550 of this person enclosure is made of an at least less deformable synthetic material, as teflon, in such way, that it functions as carrier for the upper section 552, which is also sufficiently non-deformable, and provided with a transparant head enclosure 554.
  • this lower section 550 is open at its bottom side and locally made heavier in its section 548.
  • this upper section 552 contains coupling sections for securing the flexible arm sections 558.
  • the lower section 550 is provided with rolls for the displacement of such enclosure over floor 340.
  • this carrier section 548 is provided with sealing-off means for a leak-free securing thereof onto the test and cleaning facility 530, see Figure 29.
  • the medium supply and discharge tubings 390 and 392 for such enclosures 386 are coupled with the nipples 394, located in floor 340, for connection thereof with a supply and discharge of respiration air.
  • this respiration medium cannot contaminate the column ultra filtered lower medium 374, situated in corridor 364 above this floor 340.
  • elevator 388 By means of elevator 388 such person can enter this enclosure 386 through its open bottom side 548 and can withdraw therefrom.
  • compartment 330 in racks 398 ultra cleaned components for the equipment are stored within the column ultra-cleaned upper medium 368.
  • the discharge ducts 404 are located for discharge of upper medium 368 and whether or not combined with processing medium, see also Figures 30 and 31, in downward direction toward the whether or not central discharge duct 406.
  • Such discharge duct can be connected with an own discharge to simplify the separation of processing medium.
  • the discharge ducts 412 are located for discharge of medium 368,and such whether or not combined with contaminants, toward the central discharge duct 414.
  • these ducts can be connected with lower compartment 352 as discharge duct.
  • the volumes upper and lower medium are limited and depend on the locally required cleanroom condition.
  • the startery sections of the wafer transfer-, processing- and diagnostic equipment and accessories are located in the lower compartment 352 in the lower compartment 352 .
  • the installation 310 consists of two rows 314 and 316 of wafer processing stations, in which successive wafer processings take place under vacuum in groups 420, 422, 424 and 426 of high vacuum wafer processing modules.
  • the number of processing modules can vary per station from a single module on, dependent on the type of wafer processing.
  • a wafer diagnostic station and/or a wafer orientation station can be arranged.
  • FIG. 30 a section of a modified installation 310' is shown at group 420' of high vacuum wafer processing stations.
  • this section at least locally does not need to be separated with a vertical sidewall from wafer transfer compartments 318 and 320. Consequently, in that location the cleaning modules 326 and 328 together with the wafer transfer robot 356 can have a position within these wafer transfer compartments 318' and 320'.
  • exit module 430 any type of effective treatment of the wafer, as for instance the removal of such metal particles or other deposition by means of an etch process.
  • module 328' a continued Processing of this wafer, as cleaning thereof by means of ultra-fine atomized liquid, situated within a gaseous medium as carrier medium, takes place.
  • wafer degassing stations 444 are located, preferably consisting of a series of degassing modules 446, 448 and 450.
  • degassing modules 446, 448 and 450 are located aside each other, preferably an automatic transfer of the wafer cassettes takes place through tunnel 410, connecting the exit section 432 of such installation 310 or section thereof with the intrance section 434 of another installation 310' or section thereof.
  • receiver station 434 two arrangements 436 and 438 to receive cassettes 440 are located, which storage facilities are connected with the cassette supply and discharge device 442.
  • FIG. 31 a section of installation 310' is shown, wherein lithography oriented wafer processings take place in group 452 of wafer processing stations.
  • inert gas 368 from the wafer transfer compartment 318' takes place through ducts 414', located in its lower separation wall.
  • stepper station 456 the omittance of the separation wall in between such station and the wafer transfer compartment 316', because such station at least almost does not generates contamination and no processing gases have to be discharged.
  • an additianal module 430' for wafer treatment is located.
  • these modules can be exchanged or this second module omitted.
  • any other combination of wafer transfer/processing stations and whether or not combined with wafer transfer/de-gasing/diagnose compartments, as shown in Figures 30 and 31, can be used and such in any size and number.
  • combinations of groups of high vacuum stations and other wafer transfer/processing stations are possible, including wafer transfer/ processing installations, wherein at least a total wafer processing cycle, with whether or not locally a repeat, if required, as for DRAM wafer processing technics with multiple layers of elements.
  • central corridor section 376 and branched corridor sections 378 a column highly filtered air 372 is maintained, with on top the column ultrafiltered inert gas 368.
  • this column inert gas in these corridor sections 376 and 378 functions as a buffer, with only a very restricted discharge thereof through discharge orifices 460 at the separation level 382, if required, as imiginary is shown in Figure 32.
  • the discharge ducts 404 are located in floor 402 and in the wafer transfer/de gasing/storage/diagnostic compartments 318 and 320 the discharge ducts 512 in their floor, this supplied inert gas is moved over this stationary column inert gas in these corridor sections 376 and 378 as contamination-free gaseous guide wall and over the vertical separation walls 324, 326, 360 and 362 into these compartments 314, 316, 318 and 320 and suctioned off through these discharge ducts 404 and 414.
  • the location and size of the discharge orifices in compartments 314, 316, 318 and 320 are adjusted to the local wafer transfer and processing in order to restrict the use of this gas as much as possible.
  • this float switch 380 cooperates with these discharge orifices, with these discharge ducts as safety.
  • the separation level 382" in between the column gas 368 and the column ultra filtered air 372 is lowered and whereby the vertical separation wall 324" extends upward from this floor over some distance beyond this level.
  • wafer transfer/processing/storage/diagnostic compartments 314" and 318" respectively 316" and 320" are combined, with no separation wall in between these compartments and the lower compartment 352".
  • the discharge orifices 466 are located, which are connected with the discharge duct 358.
  • the gaseous medium 368 here also supplied through filters 358", is moved through these compartments 314"/318" and 316"/320" toward these discharge orifices 466.
  • this vertical separation wall 324" whether or not locally or in part is omitted.
  • Such separation wall 324" thereby in particular functions to prevent, that contaminated air from the air column 372" in corridor 364" can be discharged through these compartments 314"/318" and 316"/320",
  • this vertical wall 324" extends in upward direction from floor 340" toward beyond the wafer transfer zone 362",
  • compartments 314"/318" and 316"/320" enable, that components of the equipment, as piping, can freely extent therein and do net need to be lead through one or more walls.
  • this equipment is also accessable from lower compartment 352".
  • parts of this equipment or even the entire equipment can be displaced through this passage toward or from the upper compartment 330", in particular for replacement thereof.
  • the installations 310, 310' and 310" have the following positive features:
  • zone 362 in continuous open position thereof, with a negligible generation of contamination.
  • compartments 314, 316, 318 and 320 or combinations thereof a fraction of the whirlings above the wafer transfer zone, present in the existing installations.
  • the total consumption of inert gas is only a fraction of the total consumption of cleanroom air with the existing installations, often less than 1 %,
  • the module is suitable for considerable differences in pressure between the pulsator chamber 98 and the discharge passage 28.
  • the lower wall section 230 of the upper chamber block 22 has preferably at the central section 152 of membrane section 96 a slightly lower level, for instance 5 ⁇ m, than the adjacent wall sections 232 and 234, see Figure 8 C .
  • the cooperating section of the lower chamber block can be provided with an upwardly extending wall section at this central membrane section 152.
  • this section 152 is jointly moved upward over a micro distance, with the temporary creation of the micro passage 160.
  • Such stiffness of membrane section 96 depends on the differences in pressure for this cleaning module, with a maximal stiffness for wafer cleaning under a maximum average pressure , for instance 80 bar and pressure fluctuations of 40 bar.
  • Figure 6 shows module 12''', whereby the lower chamber block 20'" is also provided with a central section 240, which by means of supply and discharge of liquid medium 104 toward and from the lower pulsator chamber 244 is reciprocated under a low frequency.
  • the cylindrical stop combinations 200' "/202"' for these block sections 34''' and 240 provide the limitation of the block displacements, preventing an unallowable deformation of membrane sections 96''' and 242.
  • the frequencies of the block vibrations are different, with consequently variation of the resultant amplitude to a great extent.
  • one of these pulsators is another type of pulsator, as for instance a piezo transducer.
  • stop wall 202' of this block section 34' not yet is urged against this stop wall section 200'.
  • any other build-up in pressure for this medium sealing-off/pass-through system is possible, with whether or not the application of a stop system and including wafer cleaning under high pressure or negative pressure.
  • membrane sections 96' and 262,with in between the displaceable sealing-off section 266, can be considered as an enlarge d membrane section, whereby membrane part 96' thereof functions as flexible element in between this sealing-off section 266 and the pulsating block section 34' and the other membrane part 262 functions as flexible element in between this sealing-off section 266 and the outer block part 94'.
  • stop wall 202' of block section 34' is not urged against stop wall 200.
  • the height of gap 288 in between block wall sections 284 and 286 near chamber 24' is still at least 10 ⁇ m, depending on the pulsation amplitude.
  • this gap section 288 is sufficient to have the pulsating reciprocations of upper chamber wall 34' taking place at least almost jam-free, as is wanted with wafer cleaning under ultra-high pressure.
  • this recess has a somewhat larger entrance diameter together with an inclined sidewall.

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)

Abstract

Installation (10) de transfert et de traitement des tranches (26), dans laquelle un transfert de tranches sensiblement sans contamination s'effectue vers un module de nettoyage (12) qui nettoie toutes les faces des tranches dans un milieu gazeux inerte. La décharge contrôlée de la chambre de nettoyage (24) du milieu de nettoyage s'effectue au moins en partie à l'aide dudit gaz inerte et dans un système de fermeture hermétique placé dans un espace de décharge prédéterminé et au moins temporaire situé entre des chambres (20 et 22) et s'étendant latéralement vers l'extérieur à partir de la chambre de nettoyage (24) et vers un passage de décharge (28).
PCT/NL1991/000025 1990-02-16 1991-02-15 Installation amelioree de transfert et de traitement des tranches WO1991012629A1 (fr)

Priority Applications (1)

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NL9000374 1990-02-16
NL9000376 1990-02-16
NL9000376 1990-02-16
NL9000374 1990-02-16
NL9000579 1990-03-14
NL9000579 1990-03-14
NL9000903 1990-04-17
NL9000903 1990-04-17
NL9001177 1990-05-21
NL9001177 1990-05-21
NL9001400 1990-06-20
NL9001400 1990-06-20
NL9001862 1990-08-23
NL9001862 1990-08-23
NL9100237 1991-02-11
NL9100237 1991-02-11

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JP (1) JPH06500427A (fr)
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Cited By (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0572140A1 (fr) * 1992-05-12 1993-12-01 Matsui Manufacturing Co., Ltd. Appareil pour enlever des dépôts de surface par air pulsé
EP0575125A1 (fr) * 1992-06-17 1993-12-22 Santa Barbara Research Center Méthode et dispositif de traitement chimique par voie humide de disques semi-conducteurs et d'autres objets
NL1007357C2 (nl) * 1997-10-24 1999-04-27 Edward Bok Verbeterde inrichting ten behoeve van wafer reiniging.
WO2001033615A2 (fr) * 1999-11-02 2001-05-10 Tokyo Electron Limited Procede et appareil destines au traitement supercritique de multiples pieces
US6487792B2 (en) 2000-05-08 2002-12-03 Tokyo Electron Limited Method and apparatus for agitation of workpiece in high pressure environment
NL1037069C2 (nl) * 2009-06-23 2010-12-27 Edward Bok Semiconductor substraat transfer/behandelings-tunnel-opsteling, waarin tenminste mede in het boven- en/of onder tunnelblok de opname van een zich in dwarsrichting ervan uitstrekkende stripvormige inrichting ten behoeve van tijdens de werking ervan het ononderbroken opvolgend op- en neerwaarts verplaatsen van het stripvormige drukplaat-gedeelte ervan.
NL1037065C2 (nl) * 2009-06-23 2010-12-27 Edward Bok Stripvormige transducer-opstelling, welke is opgenomen in een stripvormig gedeelte van een tunnelblok van een semiconductor substraat transfer/behandelings-tunnelopstelling ten behoeve van het daarmede tenminste mede plaatsvinden van een semiconductor behandeling van de opvolgende semiconductor substraat-gedeeltes, welke gedurende de werking ervan ononderbroken erlangs verplaatsen.
NL1037193A (nl) * 2009-08-11 2011-02-14 Edward Bok Semiconductor tunnel-opstelling, bevattende in het boventunnelblok ervan een medium-toevoerinrichting.
NL1037192A (nl) * 2009-08-11 2011-02-14 Edward Bok Semiconductor tunnel-opstelling, bevattende in het boventunnelblok ervan meerdere inrichtingen ten behoeve van het daarmede opbrengen van een nanometer hoge vloeibare hecht-substantie op de opvolgende, ononderbroken erdoorheen verplaatsende semiconductor substraat-gedeeltes.
NL1039189C2 (nl) * 2011-11-24 2013-05-27 Edward Bok Semiconductor chip, vervaardigd in een aantal opvolgende individuele semiconductor inrichtingen en waarbij in de eerste inrichting de opname van een folie-opslagrol, bevattende een zeer lange folie, in de daaropvolgende inrichtingen daarop de bewerkstelliging van opvolgende individuele rechthoekige substraat-gedeeltes, met in de laatste inrichting door opvolgende delingen ervan het verkrijgen daaruit daarvan.
NL1039188C2 (nl) * 2011-11-24 2013-05-27 Edward Bok Een aantal opvolgende individuele semiconductor inrichtingen, waarbij in de eerste inrichting de opname van een folie-opslagrol en in de daaropvolgende inrichtingen daarop de bewerkstelliging van opvolgende individuele rechthoekige semiconductor substraat-gedeeltes, met in de laatste inrichting door opvolgende delingen ervan het verkrijgen daaruit van semiconductor chips.
CN109560030A (zh) * 2017-09-26 2019-04-02 天津环鑫科技发展有限公司 一种自动圆形硅片倒片机
WO2020214785A1 (fr) * 2019-04-18 2020-10-22 Lam Research Corporation Usine de circuits intégrés contrôlés à haute densité
CN112185852A (zh) * 2020-09-21 2021-01-05 武汉光谷航天三江激光产业技术研究院有限公司 用于半导体器件封装的可搬运级联式百级洁净装置及方法
CN113143476A (zh) * 2021-05-26 2021-07-23 青岛市口腔医院 一种便于取放的消毒供应室用器械转移装置

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1986001034A1 (fr) * 1984-08-01 1986-02-13 Edward Bok Installation de traitement a transport a double flottement et traitement de tranches de silicium et de bandes
US4681776A (en) * 1984-06-04 1987-07-21 Integrated Automation Limited Improved method for double floating transport and processing of wafers
WO1987004853A1 (fr) * 1986-02-03 1987-08-13 Edward Bok Installation permettant le traitement de tranches et leur transport par flottage

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4681776A (en) * 1984-06-04 1987-07-21 Integrated Automation Limited Improved method for double floating transport and processing of wafers
WO1986001034A1 (fr) * 1984-08-01 1986-02-13 Edward Bok Installation de traitement a transport a double flottement et traitement de tranches de silicium et de bandes
WO1987004853A1 (fr) * 1986-02-03 1987-08-13 Edward Bok Installation permettant le traitement de tranches et leur transport par flottage

Cited By (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0572140A1 (fr) * 1992-05-12 1993-12-01 Matsui Manufacturing Co., Ltd. Appareil pour enlever des dépôts de surface par air pulsé
EP0575125A1 (fr) * 1992-06-17 1993-12-22 Santa Barbara Research Center Méthode et dispositif de traitement chimique par voie humide de disques semi-conducteurs et d'autres objets
NL1007357C2 (nl) * 1997-10-24 1999-04-27 Edward Bok Verbeterde inrichting ten behoeve van wafer reiniging.
WO2001033615A2 (fr) * 1999-11-02 2001-05-10 Tokyo Electron Limited Procede et appareil destines au traitement supercritique de multiples pieces
WO2001046999A2 (fr) * 1999-11-02 2001-06-28 Tokyo Electron Limited Procede et dispositif servant a effectuer le traitement supercritique d'une piece
WO2001033615A3 (fr) * 1999-11-02 2001-12-06 Tokyo Electron Ltd Procede et appareil destines au traitement supercritique de multiples pieces
WO2001046999A3 (fr) * 1999-11-02 2002-07-11 Tokyo Electron Ltd Procede et dispositif servant a effectuer le traitement supercritique d'une piece
KR100742473B1 (ko) 1999-11-02 2007-07-25 동경 엘렉트론 주식회사 제 1 및 제 2 소재를 초임계 처리하는 장치 및 방법
KR100744888B1 (ko) 1999-11-02 2007-08-01 동경 엘렉트론 주식회사 소재를 초임계 처리하기 위한 장치 및 방법
US6487792B2 (en) 2000-05-08 2002-12-03 Tokyo Electron Limited Method and apparatus for agitation of workpiece in high pressure environment
NL1037069C2 (nl) * 2009-06-23 2010-12-27 Edward Bok Semiconductor substraat transfer/behandelings-tunnel-opsteling, waarin tenminste mede in het boven- en/of onder tunnelblok de opname van een zich in dwarsrichting ervan uitstrekkende stripvormige inrichting ten behoeve van tijdens de werking ervan het ononderbroken opvolgend op- en neerwaarts verplaatsen van het stripvormige drukplaat-gedeelte ervan.
NL1037065C2 (nl) * 2009-06-23 2010-12-27 Edward Bok Stripvormige transducer-opstelling, welke is opgenomen in een stripvormig gedeelte van een tunnelblok van een semiconductor substraat transfer/behandelings-tunnelopstelling ten behoeve van het daarmede tenminste mede plaatsvinden van een semiconductor behandeling van de opvolgende semiconductor substraat-gedeeltes, welke gedurende de werking ervan ononderbroken erlangs verplaatsen.
NL1037193A (nl) * 2009-08-11 2011-02-14 Edward Bok Semiconductor tunnel-opstelling, bevattende in het boventunnelblok ervan een medium-toevoerinrichting.
NL1037192A (nl) * 2009-08-11 2011-02-14 Edward Bok Semiconductor tunnel-opstelling, bevattende in het boventunnelblok ervan meerdere inrichtingen ten behoeve van het daarmede opbrengen van een nanometer hoge vloeibare hecht-substantie op de opvolgende, ononderbroken erdoorheen verplaatsende semiconductor substraat-gedeeltes.
NL1039189C2 (nl) * 2011-11-24 2013-05-27 Edward Bok Semiconductor chip, vervaardigd in een aantal opvolgende individuele semiconductor inrichtingen en waarbij in de eerste inrichting de opname van een folie-opslagrol, bevattende een zeer lange folie, in de daaropvolgende inrichtingen daarop de bewerkstelliging van opvolgende individuele rechthoekige substraat-gedeeltes, met in de laatste inrichting door opvolgende delingen ervan het verkrijgen daaruit daarvan.
NL1039188C2 (nl) * 2011-11-24 2013-05-27 Edward Bok Een aantal opvolgende individuele semiconductor inrichtingen, waarbij in de eerste inrichting de opname van een folie-opslagrol en in de daaropvolgende inrichtingen daarop de bewerkstelliging van opvolgende individuele rechthoekige semiconductor substraat-gedeeltes, met in de laatste inrichting door opvolgende delingen ervan het verkrijgen daaruit van semiconductor chips.
CN109560030A (zh) * 2017-09-26 2019-04-02 天津环鑫科技发展有限公司 一种自动圆形硅片倒片机
CN109560030B (zh) * 2017-09-26 2024-02-09 Tcl环鑫半导体(天津)有限公司 一种自动圆形硅片倒片机
WO2020214785A1 (fr) * 2019-04-18 2020-10-22 Lam Research Corporation Usine de circuits intégrés contrôlés à haute densité
CN112185852A (zh) * 2020-09-21 2021-01-05 武汉光谷航天三江激光产业技术研究院有限公司 用于半导体器件封装的可搬运级联式百级洁净装置及方法
CN112185852B (zh) * 2020-09-21 2023-08-18 武汉光谷航天三江激光产业技术研究院有限公司 用于半导体器件封装的可搬运级联式百级洁净装置及方法
CN113143476A (zh) * 2021-05-26 2021-07-23 青岛市口腔医院 一种便于取放的消毒供应室用器械转移装置
CN113143476B (zh) * 2021-05-26 2023-02-28 青岛市口腔医院 一种便于取放的消毒供应室用器械转移装置

Also Published As

Publication number Publication date
JPH06500427A (ja) 1994-01-13
EP0515488A1 (fr) 1992-12-02
KR920704332A (ko) 1992-12-19

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