WO1987004853A1 - Installation permettant le traitement de tranches et leur transport par flottage - Google Patents

Installation permettant le traitement de tranches et leur transport par flottage Download PDF

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Publication number
WO1987004853A1
WO1987004853A1 PCT/NL1987/000003 NL8700003W WO8704853A1 WO 1987004853 A1 WO1987004853 A1 WO 1987004853A1 NL 8700003 W NL8700003 W NL 8700003W WO 8704853 A1 WO8704853 A1 WO 8704853A1
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WO
WIPO (PCT)
Prior art keywords
wafer
processing
installation
medium
block
Prior art date
Application number
PCT/NL1987/000003
Other languages
English (en)
Inventor
Edward Bok
Ronald Johannus Wilhelmus Barlag
Original Assignee
Edward Bok
Barlag Ronald Johannus Wilhelm
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from NL8600255A external-priority patent/NL8600255A/nl
Priority claimed from NL8600408A external-priority patent/NL8600408A/nl
Priority claimed from NL8600762A external-priority patent/NL8600762A/nl
Priority claimed from NL8600947A external-priority patent/NL8600947A/nl
Priority claimed from NL8600946A external-priority patent/NL8600946A/nl
Priority claimed from NL8601132A external-priority patent/NL8601132A/nl
Priority claimed from NL8601131A external-priority patent/NL8601131A/nl
Priority claimed from NL8601255A external-priority patent/NL8601255A/nl
Application filed by Edward Bok, Barlag Ronald Johannus Wilhelm filed Critical Edward Bok
Publication of WO1987004853A1 publication Critical patent/WO1987004853A1/fr

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
    • H01L21/67784—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations using air tracks

Definitions

  • the invention relates to process installations with a floating transport and processing of wafers.
  • the installation according to the invention eliminates these shortcomings and is mainly characterized by the taking place of the processings and handling of the wafers in individual, at least almost sealed-off modules, whereby tunnelpassage sections interface these modules.
  • a circular separation wall is used in these modules, extending around their processing chamber as part of this tunnelpassageway and whereby this wall at its top is provided with a cover, forming a cap.
  • the preferably circular bottom edge of this cap corresponds with a preferably circular partition rim of the lower tunnel block. rieans are included in these modules to move this cap to and from this tunnelblock rim.
  • the lower tunnel block is recessed inside the rim, providing a circular discharge passage, whereby in open position of the cap gaseous medium is urged from the pressurized adjacent tunnel passageways through the gap in between the cap and this block rim towards this discharge passage, taking with it any micro particulates, created in this gap.
  • the modules include a lower chamber block and an upper chamber block. These chamber blocks also assist in the linear displacement of the wafer to and from the centre of these modules under preferably double-floating condition and in their wafer transport position can be considered an extension of the lower and upper tunnel blocks.
  • the circular lower chamber block is located within the recessed lower tunnel block, with the cylindrical discharge passage around it.
  • the upper chamber block is located within the recessed cap.
  • the wafer to be processed and arriving under the cap may not partly remain in the circular gap between this cap and the lower tunnel block during the following downward displacement of this cap. Therefore, a fastest obtained centric position of such wafer with regard to this cap is essential.
  • this cap functions as a stop for the wafer movement and for that purpose is tiltable.
  • the entrance side of this recessed cap is tilted upwardly, whereas the exit side thereof remains at least close to the lower tunnel block, providing this wafer stop.
  • these series of orifices are arranged in the lower tunnel block around the cylindrical daischarge passage of the module and whereby multiple flows of gaseous medium from these orifices are urged through the micro gap in between the cap and the lower tunnel block towards the wafer edge to provide the buffer stop of the arriving wafer and thereafter a contact-free central position of the floating wafer during the processing.
  • the upper chamber block is part of the cap and whereby this combination by means of at least one stepper motor is displaceable in up- and downward direction.
  • the lower chamber block is provided with a means for a displacement thereof in up- and downward direction.
  • the circular discharge passage extending upward aside the wafer edge towards the upper processing gap aside this wafer, also functions as a discharge channel for the processing medium.
  • the width of the tunnel passageway is slightly larger than the diameter of the wafer, whereas in both vertical side walls of this passageway series of orifices of medium supply channels are located for urging flows of gaseous medium toward the wafer edge for a contact-free wafer displacement and to enhance the fast establishing of the centric wafer position in the receiving module.
  • this lower chamber block can at least temporary function as a chuck with the wafer suctioned thereon under vacuum force.
  • This chuck is driven by a spin motor to provide the successive spin rpm's of the wafer during the processing.
  • Both lower and upper chamber block of the modulss are provided with at least one central supply channel to feed the established tunnel section in between these chamber blocks with gaseous transport medium during the linear wafer transfer to and from these modules and to feed both established processing gaps aside the wafer with processing medium during the proceasing of this wafer.
  • the individual chamber blocks enable in an adapted configuration of such module to function as dehydration bake oven or proximity bake oven. Thereby in this module the heat transfer from these chamber blocks toward the adjacent tunnel blocks remains within acceptable values. Furthermore, in the process module during the processing of the wafer temporary a vacuum can be drawn for vacuum processings, as for instance dehydration bake or the deposition of warm coating in vapor or gaseous phase on the heated wafer.
  • Micro contaminated ambient air from outside the installation may not enter the process modules, wherein a main processing of the wafers takes place.
  • the group of successive individual process modules cooperate with partition systems, located in both the entrance and exit of the installation. Thereby in the tunnel passageway of this installation an overpressure of the medium is maintained with regard to the atmospheric pressure of the ambient air.
  • a cleaning module functions as buffer in collecting all contaminated medium, entered the tunnel together with the supplied wafers. If the tunnel exit of the installation is connected with a high vacuum process module, then the cap of a wafer transfer module of this installation also functions as a temporary seal for this vacuum module, whereby wafers, supplied from process modules through the tunnel passageway and open cap to this transfer module, are successively transferred toward this vacuum module through a discharge opening in the lower tunnel block of this transfer module.
  • a sensor sends an impuls towards the valve of this discharge channel for a closing thereof. In addition, it sends an impuls towards the gate of the discharge channel of the receiving module to open this passage far the final centering of the wafer in this module.
  • Both central supply channels of the chamber blocks are connected with a series of branched channels, arranged in radial direction and extending in lateral direction towards at least close to the outside of these blocks.
  • the medium, flowing through these channels assist in the double-floating condition for the wafer during its transfer and processing.
  • the following processing fluid urged through these supply channels and branched channels, effectively remove the preceding processing fluid from preferably both micro processing gaps aside the wafer.
  • the processing liquid is effectively removed from the wafer surface by the following flows of gaseous medium, preferably an inert gas, urged through these channels and moving from these channels in the processing gaps in lateral direction towards the cylindrical discharge passage and further downward to the main discharge of the processing chamber.
  • gaseous medium preferably an inert gas
  • the wafer edge is effectively cleaned by means of the processing medium, discharged from the upper processing gap and moving downward along this edge.
  • the main buffering of the arriving wafer takes place underneath the lower tunnelblock rim by means of multiple mini flows of medium from series of mini supply orifices, located in the top section of the sidewall of this recessed lower tunnel block.
  • the cap with preferably the upper chamber block part thereof, is coupled with only one stepper motor for its displacements in up and downward direction, whereas the lower chamber block is coupled with at least two stepper motors to enable the required tilting thereof.
  • the discharge side of this chamber block is in its downward position to enable this buffer stop of the wafer.
  • use can be made of a temporary wet wall structure in this upper section of the inner wall of the lower tunnel block and whereby flows of liquid from the wall apertures at least cooperate in establishing this buffer stop for the arriving wafer.
  • the outside diameter of the cap is slightly smaller than the inside diameter of the recessed lower tunnel block and whereby by means of its stepper motor its lower section is moved into and out of this recess.
  • flows from these orifices are directed to the edge of the wafer, brought together with the lower chamber block to the lower processing position, and provide the contact-free processing of this wafer.
  • this medium can temporary be a processing medium in liquid form, whereas during the following drying cycle in the module this liquid is replaced by an inert gas.
  • FIG. 1 shows in a simplified longitudinal sectional view the installation according to the invention, including a number of process modules.
  • FIG. 2 is a horizontal longitudinal sectional view over the tunnel passageway of the installation according to FIG. 1.
  • FIG. 3 is a cross sectional view of a cleaning module.
  • FIG.4 is a cross sectional view of an etch module.
  • FIG. 5 is a cross sectional view of a module for deposition on the wafer of a coating in vapor phase.
  • FIG. 6 is a cross sectional view of a module for deposition on the wafer of a coating in liquid form.
  • FIG's 7A,B,C and D show the module according to FIG. 6 in successive depoty processing positions of the wafer.
  • FIG. 8 shows a detail of the processing chamber of a proximity bake module, with the wafer in its lowest position for a minimal heat transfer to it.
  • FIG. 9 is the detail according to FIG. 8, whereby the wafer is urged upward towards the upper chamber block for a maximum heat transfer to it.
  • FIG. 10 is another configuration of the proximity/dehydration bake module, whereby the combination of lower chamber block and floating wafer is displaceable in upward direction toward the upper chamber block for a controlled heat transfer to the wafer.
  • FIG. 11 is a cross sectional view of the tunnel passageway of a receiver module with a tilted inlet side of the cap for admitting an arriving wafer.
  • FIG. 12 is the view of FIG. 11, whereby the lower chamber block is further tilted toward a buffer stop position for the arriving wafer.
  • FIG. 13 is the view of FIG. 12, with an established wafer stop.
  • FIG. 14 is the view of FIG. 13, whereby the cap and the lower chamber block together with the floating wafer are moved to their lowest processing position.
  • FIG. 15 is a schematic longitudinal sectional view of a section of the tunnel passageway of the installation with the transfer of a floating wafer from a sender module toward a receiver module.
  • FIG. 16 is the tunnel section according to FIG. 15, whereby the wafer is in its end phase of linear displacement.
  • FIG. 17 is the tunnel section according to FIG. 16, with an established buffer stop of the wafer.
  • FIG. 18 is the sectional view according to FIG. 14, whereby processing of the wafer takes place.
  • FIG. 19 is an enlarged detail of the view of FIG. 18, showing the urging of flows of medium toward and along the wafer edge.
  • FIG. 20 is a cross sectional view over line 20-20 of the detail of FIG. 19.
  • FIG. 21 is the view according to FIG. 18, whereby the lower chamber block together with the wafer is moved upward to their wafer transfer position.
  • FIG. 22 shows the section according to FIG. 21, with a tilted exit side of the cap to allow the transfer of the floating wafer from this module as sender module.
  • FIG. 23 is a cross sectional view of another configuration of a module, with a buffer stop in the lower tunnel block.
  • FIG. 24 is an enlarged detail of the bufferstop section of the module according to FIG. 23, with an arriving wafer.
  • FIG. 25 is the section according to FIG. 24, showing a completed buffer stop of the wafer
  • FIG. 26 is an enlarged detail of the processing section of the module according to FIG. 23 during the wet processing of the wafer.
  • FIG. 27 is the detail according to FIG. 25 during the following drying cycle.
  • FIG. 28 is the module according to FIG. 23, with a modified arrangement of the orifices in one medium supply block.
  • FIG. 29 is an enlarged detail of the module according to FIG. 28, showing the buffer stop of an arriving wafer.
  • FIG. 30 is a cross sectional view over line 30-30 of the detail according to FIG. 29.
  • FIG. 31 is a cross sectional view aver line 31-31 of the detail according to FIG. 29.
  • FIG. 32 is the detail according to FIG. 29, with the lower chamber block and floating wafer moved downward towards their processing position.
  • FIG's 33, 34 and 35 show the detail of FIG. 32, with the cap, also functioning as upper chamber block , gradually moved downward to its lowest processing position.
  • FIG's 36, 37 and 38 show the detail of FIG. 35, whereby after the processing the combination of lower chamber block and floating wafer together with the upper chamber block move upward to near their wafer transfer position.
  • FIG. 39 shows a sender and receiver installation according to the invention connected with a main processing module.
  • FIG. 40 is a cross sectional view over line 40-40 of the installation according to FIG. 39.
  • FIG. 41 shows the wafer transfer module, incorporated in the installation according to FIG. 39, with a vacuum chuck moved inside this module for a wafer transfer.
  • FIG. 42 is the module according to FIG. 41 , whereby the removal of this vacuum chuck together with the wafer from this module takes place.
  • FIG. 1 the installation 10 for successive processings of wafers 12 is shown, see also FIG. 2.
  • This installation consists of supply module 14, gate module 16, cleaning module 18, module 20 for dehydration bake, module 22 for deposition of a primer in vapor phase on the wafer, module 24 for deposition of a coating in liquid form on the wafer, module 26 for proximity bake, gate module 28 and discharge module 30.
  • FIG. 3 shows the cleaning module 18 in a longitudinal sectional view.
  • This module mainly consists of lower tunnel block 32, upper tunnel block 34, tunnel passageway 36 in between these blocks, recess 38 in the lower tunnel block, lower chamber block 40 as chuck, together with its drive 42 mounted on support 44, displacers 46 and 48, mounted on the lower block extension 50 for an up- and downward and whether or not tilted displacement of this block 40, cap 52, located in the recess 60 of the upper tunnel block 34, upper chamber block 54 and displacers 56 and 58, mounted on this block, for a whether or not tilted up- and downward displacement of this cap 52.
  • Linear displacement of the wafer 12 takes place under floating condition, enabled by the flow of gaseous medium 100 from the orifices 62 and 64 in the tunnel passageway 36, orifices 66 in the lower chamber block 40 and orifices 68 in the upper chamber block 54.
  • the discharge of the transport medium whether or not temporary takes place through the central discharge 70, located in the center of the tunnel passageway 36 and the cylindrical discharge passage 72 around the lower chamber block 40, with a discharge through at least one of the channels 74 and 76, located in the lower end of the extension 50 of the lower tunnel block 32.
  • the wafer transfer system of the installation 10 is shown in FIG's 11 through 17.
  • wafer 12 is transferred from the tunnel passageway 36 into the receiver module 122. Thereby the inlet side 80 of the cap 52 is moved upwardly to enable the entering of this module by the wafer.
  • Sensor 82 has registered the arrival of the wafer and sends an impuls to the displacer 48 to move the exit side 84 of the lower chamber block 40 in downward direction.
  • an upward displacement of the inlet side 86 of this block 40 is established by displacer 46, see FIG. 12.
  • the wafer 12 is displaced toward its centric end position, whereby in the end phase this wafer with its edge rests against buffer 90.
  • This buffer is fed by gaseous medium 100, supplied by the supply channels 92, extending into the tunnel passageway 36, urged through the micro gap 94 in between cap 52 and rim 96 of the lower tunnel block 32 toward this wafer edge 88 and discharged in downward direction through the cylindrical discharge passage 72 toward discharge 74.
  • the buffer 90 can also be fed by other supply channels, whether or not extending into this tunnel passage-way.
  • the wafer 12 becomes enclosed within the module, whereupon processing thereof takes place.
  • the wafer is discharged from the sender module 120 through its exit section 108 and transferred toward the receiver module 122. There by this floating wafer is guided during its discharge from module 120 by means of flows of gaseous medium 100 from the supply channels 102 and urged through multiple ports in both raised sidewalls 104 and 106 toward the wafer edge 88.
  • discharge channel 70 located in front of the receiver module 122, is opened and the other discharges at least as much as possible are closed, in the area around this discharge 70 a lower pressure is created and temporary maintained and whereby the gaseous medium 100from these channels 102 and channels 66 of the lower chamber block 40 is suctioned toward this discharge area.
  • the wafer is urged to move together with these gas flows, because at least in the tunnel passageway 36 it functions as a moving pressure wall. During this wafer transfer the double-floating condition for the wafer in this tunnel passageway is also maintained by means of the supply of gaseous medium 100 from the ports 62 in the lower tunnel block 32 and the ports 64 in the upper tunnel block 34.
  • the wafer is moved in the direction of this receiver module 122 and without a mechanic contact with the sidewalls 104 and 106, due to the effective guidance thereof by means of the flows of medium from the ports in these walls.
  • this wafer 12 for the greater part thereof has entered the receiver module 122.
  • the sensor 82 registers this arrival with thereafter the buffer stop, as shown in FIG. 17 and described in FIG's 13 and 14.
  • this receiver module 122 also a guidance of the wafer 12 takes place by means of flows of gaseous medium 100 from the channels 102, located in the sidewalss 104 and 106 and urged towards the wafer edge 88,
  • FIG. 18 in processing chamber 110 a two-sided processing of the wafer 12 takes place with supply of medium in liquid form through the channels 66 in the lower chamber block 40 and channels 68 in the upper chamber block 54.
  • the supply channels have a larger diameter, whereby the resulting increased flows of gaseous medium prevent the escape of the processing medium through these recesses.
  • one or more channels 92' extend into the rim 96 underneath these recesses, with between these ports and the tunnel passageway the micro gap 94, see FIG. 19,
  • liquid processing medium is removed from the bottom side 118 of the wafer and this chamber block 40 by means of gaseous medium, supplied through the channels 66, see FIG. 21.
  • both lower chamber block 40 and exit side 126 of the cap 52 are displaced in upward direction to enable the transfer of the wafer from this module 122 toward another module. Thereby this module functions as sender module, see FIG. 22.
  • this lower chamber block 40 is just above the lower wall 130 of the tunnel passageway to enable an unobstructed removal of the floating wafer.
  • the membrane 132 is on one side secured to the support 44 and on the other side to the extension 78 of the lower tunnel block 32, enabling the small tilted displacements, 0,6 mm, of the lower chamber block 40,
  • the lower chamber block 40 of the process module 138 is not rotated by a motor. Thereby the displacers 46 and 48 are secured to the cover 140, which is leak-free attached to the lower side of the lower tunnel block 32.
  • the membrane 132 leak-free connects the lower chamber block 40 with the cover 140.
  • This module is suitable for cleaning, rinsing, stripping, developing and etching.
  • this module can be used for de-hydration bake, proximity bake and the deposition of a coating on the wafer in whether or not vapor phase .
  • this module in an adapted form is suitable to function as wafer transfer module.
  • the chamber blocks 40 and 54 are heated by means of warm liquid, urged through the channels 142 and 144.
  • the temperature of these blocks can be maintained higher as the boiling point of the final processing liquid under whether or not a lower pressure or vacuum.
  • the processing installation wherein this module is located, is provided with separators for the separation of the various types of medium and supply systems of these separated mediums.
  • separators for the separation of the various types of medium and supply systems of these separated mediums.
  • Heating of this module mainly takes place in the upper chamber block 54 by means of elements 160, located therein, and the heating block 162, located in the lower section of this module.
  • the lower chamber block 40 can also be provided with a heating element.
  • the heated swivel arm 164 for the supply of this medium is located in the installation aside this module, similar as is shown in FIG. 6 for the coating module.
  • the wet wall 150 is used, whereby possibly only in the end phase of the linear wafer displacement or during part of the processing liquid medium is urged to this wall.
  • this wet wall can be minimal, with only a ring shaped buffer profile immediately underneath the rim 96.
  • the processing occurs in the center of the chamber 166, whereas during the deposition of the primer laminar flows of warm gaseous medium 100 from the upper chamber block 54 move in downward direction along the wafer towards the discharges in the lower section of this chamber.
  • the drive 42 for rotation of the wafer under low rpm.
  • This drive is mounted on the plate 44. Within the scope of the invention this drive can be omitted.
  • the displacer 174 with its shaft 176 secured to the lower side of this plate, is with its housing 178 attached to the support 180.
  • This support is coupled with the displacer shafts of the displacers 46 and 48, whereas the housing 182 is secured to the bottom 184 of the cover 186.
  • the membrane 188 is with one end secured to the support 180 and with the other end to this bottom 184, enabling the required slight tilting of this support 180.
  • the cylindrical separation wall 190 is secured to this support 180. It funstions also as support for the heating block 162 and as inner wall for the wet wall 192. Thereby medium 194 is urged through the cylindrical passage 196 towards the top of this wet wall.
  • this wet wall collects a part of the not deposited primer. Furthermore, through supply channel 198 gaseous medium 200 is supplied to the chamber 202 inside the separation wall 190.
  • a periodically enlarged supply of liquid medium 206 through the wet wall 150 provides the discharge in downward direction of primer particles, deposited on the inner wall 208 of the cover 186.
  • this inner wall can also be a wet wall.
  • the wet wall can also be configurated as medium supply walls 74', with recessed segments aside, see FIG. 20, Thereby a supply of medium through these medium supply walls for a buffer stop at the end of its linear displacement.
  • FIG. 6 the module 24 for deposition of a coating 212 on the wafer is shown. Thereby its structure is almost the same as that of module 22.
  • the swivel arm 214 for supply of this coating is located in the section 216 of the installation 10 aside this module. Thereby during non-processing the orifice 218 is preferably located in this section.
  • this arm is swiveled through the opening 220 toward the inside of the module.
  • chamber 222 the deposition of coating takes place, whereby during the spinning of the wafer excessive coating is spinned from the wafer and deposited on the inner wall 224 of the cover 226.
  • the medium preferably a thinner 228, supplied through the wet wall 150 and flowing in downward direction along this wall toward the lower section of the module, maintains a layer thereof on this wall to collect this excessive coating and discharge it.
  • At least temporary during the spin processing thinner is urged through the supply channel 196. toward the top of the wet wall 192 and whereby thinner might be deposited on the bottom side of the wafer 12 and spinned off.
  • the turntable 40 by means of the displacers 46 and 48 is moved in downward direction and whereby the height of the gap 230 is reduced to that extent, that the thinner, discharged from this gap, makes a contact with the bottom side 232 of the wafer.
  • the wafer 12 is brought to a floating condition thereof on the table 40 by means of thinner, supplied through the channels 66 of this table.
  • the thinner is urged through the gap 238 in between the wafer bottom side 232 and the table 40 and discharged in downward direction, whereby micro contamination and coating particles are removed and discharged.
  • the wafer is moved upwardly towards the section 240 and thereafter section 242, see FIG's 7B and 7C, whereby this thinner 222 is removed by means of gaseous medium 100.
  • the wafer is transferred to the following module 26, wherein proximity bake of the applied coating takes place, see FIG. 8.
  • a minimal gap 250 is maintained in between the lower chamber block 252 and this wafer as the result of a minimum supply of medium 100 through the supply channels 254, located in this block.
  • a maximum height of gap 256 is maintained in between the upper chamber block 258 and this wafer.
  • both chamber blocks 252 and 258 are heated. Thereby the temperature of the lower chamber block 252 is only slightly higher than that in the rest of the tunnel passageway, whereas in the upper chamber block 258 a temperature of for instance 200oC. is maintained.
  • the wafer displaces away from this block 252 in the direction of the upper chamber block 258, with an accompanying rise of the temperature.
  • this wafer After reaching a sufficient drying level of the coating, applied on the wafer, for instance after 1 to 2 minutes, this wafer is gradually displaced downwardly toward the lower chamber block 252. Thereby the temperature of the wafer together with the coating is gradually reduced to slightly higher than that of this section 252 and whereupon this wafer can be transferred.
  • any other configuration of the blocks 252 and 258 is possible, with for instance no heating of the lower chamber block 252.
  • discharge channels can be arranged.
  • the upper chamber block 258' is over some distance removed from the tunnel passageway 36.
  • the lower chamber block 252' is coupled with the displacer 262.
  • the wafer, under floating condition arrived above the block 252', is thereupon together with this block displaced toward this upper chamber block 258', whereby the temperature of this wafer gradually increases. Thereupon during a longer period of time this combination remains in a certain processing position, determined by a sensor, for a continued heat transfer, whereupon this combination is gradually displaced downward again.
  • the lower chamber block 252 ' preferably is provided with both supply and discharge chan- nels 264 and 266.
  • this cap After this processing this cap at first is displaced over a micro distance from this rim, whereby gaseous medium from the tunnel passageway 36 through the created micro gap is urged towards the processing chamber 268, whereby created micro contamination in the seal is removed from this gap and together with this gaseous medium discharged through the discharge of the module. After a further opening of this cap the wafer is transferred to the following module.
  • FIG. 23 shows a processing module 270.
  • the medium supply segments 274 and 276 are positioned, see also FIG's 24 and 25, and whereby the supply channels 278, 280 and 282 , located therein, extend into the inner wall of these segments.
  • the 0-rings 296 and 298 provide the sealing-off between these medium supply systems.
  • the sensor 82 By passing the sensor 82, see FIG. 15, it sends an impuls to the displacer 48 with a resulting further tilting of this chamber block 40. Thereby in the end phase of the wafer transfer this wafer is buffered by means of flows of gaseous medium 100 from the upper supply channels 282.
  • Another sensor 310 registers the arriving wafer 12 and sends a following impuls to the displacer 48 for an even further tilting of the lower chamber block 40.
  • the front side 312 of the wafer is urged in downward direction along the gaseous cushion 314, also under the influence of its gravity, and whereby the wafer comes to a rest against the liquid buffer 316, fed with liquid medium 318 through the channels 280, see FIG. 25.
  • this wafer follows the successive displacements of the lower chamber block 40.
  • the ultra narrow gap 300 sufficiently separates the interior of the module from the tunnel passageway 36 and whereby gaseous medium 100, filling the upper section of this micro gap and supplied through the channels 282 and possibly from this tunnel passageway, is urged downward in an in radial direction uninterupted flow through this gap for a discharge thereof together with the processing medium through discharge 328.
  • the width of the micro gap can be smaller than 30 micrometer.
  • its flow resistance is that large, that in the tunnel passageway and in the supply channels 282 a higher pressure can be maintained than in the processing chamber without an excessive consumption of gaseous medium.
  • every increase in supplied processing medium simultaneously result in an enlarged discharge thereof.
  • the liquid processing medium 334 from the processing gaps 330 and 332 aside the wafer is collected in the roomy discharge 72 and bufferposition 336. After the processing by means of a number of successive liquid processing mediums 334 a removal of the final liquid medium is accomplished by the wafer rotation combined with gaseous medium 100, supplied through all supply channels, including channels 278 and 280, see FIG, 27.
  • the process module 270' is provided with a modified medium supply block 340 and whereby a great number of micro supply channels extend into the inner wall 342 of this block.
  • Cover 344 locks this block 340 and 0-ring 346 provides the sealing-off.
  • the grooves 350 are positioned in the top wall of the supply block 340 and whereby their orifices 352 adjoin each other, providing an in radial direction uninterrupted supply of medium through these grooves towards the inner wall 342 of this block, see also FIG's 29 and 30.
  • the grooves 350 together with the micro channels are connected with the narrow cylindrical communication gap 356, see also FIG. 31,
  • the distance between the micro channels 356 is larger than between the grooves 350, These channels function in the combined establishing and maintaining of the micro wet wall 358 and the urging of multiple micro flows towards the wafer edge 88 for a mechanic contact-free displacement thereof along the inner wall 342,
  • the grooves 350 and channels 354 extend into the circular communication grooves 360, located in the inner wall 342 of the supply block 340,
  • At least one supply channel 362 for highly filtered gaseous medium and at least one supply channel 364 for highly filtered liquid medium extend into the communication gap 356,
  • the lower series of channels 366 are connected with at least one supply channel 368 for liquid processing medium.
  • the operation of the module is as follows:
  • the contact-free buffer stop of the wafer is accomplished by means of flows of medium 370 from the grooves 350 and channels 354.
  • FIG. 33 the wafer is arrived in the processing section 372 and whereby flows of processing medium 374 from channels 366 maintain the contact-free centric position of the floating wafer with regard to the inner wall 342.
  • pre-drying of the wafer takes place by means of gaseous medium 100 and whereby this medium through channel 362 is also urged into the communication gap 356.
  • FIG. 38 shows this combination in their highest processing position with a completed drying of the wafer.
  • any other type of in-line wafer processing including the following: stripping, spin-on dopant; plasma etching, reactive ion plasma etching, magnetron ion etching; metallization, planarization, sputtering; ion implantation, ion milling; laser annealing; chemical vapor deposition, including processing under low pressure and low temperature, plasma enhanced; physical vapor deposition; and oxidation.
  • processings can be combined with lithography modules, including in-line e-beam direct writing modules and x-ray micro lithography modules. Furthermore on the following systems: testing, measurement, inspection and wafer marking.
  • the installation according to the invention can be connected with modules, wherein the above described processing systems take place with a batch of wafers.
  • the main process module 400 wherein processing under high vacuum takes place, is connected with a supply process installation for wafers and a discharge process installation 10" for wafers.
  • module 18 the all-sided cleaning of the wafer 12, supplied from the tunnel passageway 402 through the gate module 16, and in the oven module 20 the removal under vacuum of the moisture remnants from the wafer, as for instance dehydration bake.
  • the wafer 12 is transferred into the transfer module 404, wherein it is carried over toward the take-over module 406 as part of this main process module 400.
  • the lower chamber block 40 is provided with a recess 408, wherein the arm 410 of module 406, with the vacuum chuck 412 mounted thereon, has arrived, see also FIG. 41.
  • the tunnel passageway 36 is sufficiently sealed off from the chamber 414, located in the lower tunnel block 32.
  • this chamber block 40 is moved downward, the wafer 12 ultimately comes to rest upon the chuck 412 and is suctioned thereon. Thereafter this arm 410 together with the chuck 412 and wafer 12 are moved in sideward direction through the recess 418, located in the sidewall 420 of the lower tunnel block 32, see FIG. 42.
  • this arm with chuck is returned to module 404 to take over the following wafer.
  • cap 52 hermetically sealed off tunnel passageway 36.
  • this module is pressurized and whereby the take-over module 430 successively removes a wafer from the periodically turning turntable 424 and transfers this wafer toward the installation 10".
  • Transfer module 432 module 18, wherein an all-sided cleaning of the wafer takes place, module 20, wherein oven drying of this wafer is accom pushed and gate module 16,
  • this module 432 is similar to those of module 404, however with a displacement pattern of the robot 434 contrary to that of robot 422.
  • cap 52 is moved upward and the wafer is carried off under floating condition toward module 18.
  • module 18 mainly contamination, deposited on the wafer during its processing in the main process module 400, is removed, whereafter rinsing and drying of the wafer takes place.
  • any type of medium in liquid, vapor or gaseous form is applicable.
  • the wafers can also be transferred toward modules for testing, inspection and marking of the wafers and received therefrom.
  • any position of the wafer in such module even a facedown position thereof, with the main processing of the bottom side of this wafer.
  • any other structure and operation of the wafer transfer module 404 is possible.

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)

Abstract

Une installation (10) destinée au traitement, essentiellement dans des conditions de flottage, de tranches (12) disposées dans une série de modules de traitement (18, 20, 22, 24 et 26) au moins partiellement isolés, permet le transfert de tranches successives (12) à travers des passages de tunnel d'interface (36) dans des conditions de flottage.
PCT/NL1987/000003 1986-02-03 1987-02-02 Installation permettant le traitement de tranches et leur transport par flottage WO1987004853A1 (fr)

Applications Claiming Priority (16)

Application Number Priority Date Filing Date Title
NL8600255 1986-02-03
NL8600255A NL8600255A (nl) 1986-02-03 1986-02-03 Verbeterde inrichting voor wafer transport en processing.
NL8600408A NL8600408A (nl) 1986-02-18 1986-02-18 Verbeterde inrichting voor wafer transport en processing.
NL8600408 1986-02-18
NL8600762 1986-03-25
NL8600762A NL8600762A (nl) 1986-03-25 1986-03-25 Verbeterde inrichting voor wafer transport en processing.
NL8600946 1986-04-15
NL8600947A NL8600947A (nl) 1986-04-15 1986-04-15 Verbeterde inrichting voor wafer transport en processing.
NL8600946A NL8600946A (nl) 1986-04-15 1986-04-15 Verbeterde inrichting voor wafer transport en processing.
NL8600947 1986-04-15
NL8601132A NL8601132A (nl) 1986-05-02 1986-05-02 Verbeterde inrichting voor wafer transport en processing.
NL8601132 1986-05-02
NL8601131 1986-05-02
NL8601131A NL8601131A (nl) 1986-05-02 1986-05-02 Verbeterde inrichting voor transport en processing van wafers.
NL8601255A NL8601255A (nl) 1986-05-16 1986-05-16 Verbeterde inrichting voor transport en processing van wafers.
NL8601255 1986-05-16

Publications (1)

Publication Number Publication Date
WO1987004853A1 true WO1987004853A1 (fr) 1987-08-13

Family

ID=27573822

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/NL1987/000003 WO1987004853A1 (fr) 1986-02-03 1987-02-02 Installation permettant le traitement de tranches et leur transport par flottage

Country Status (3)

Country Link
EP (1) EP0261145A1 (fr)
JP (1) JPS63503024A (fr)
WO (1) WO1987004853A1 (fr)

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1990006590A1 (fr) * 1988-12-01 1990-06-14 Edward Bok Installation amelioree servant au transport et au traitement dans des conditions de double flottement avec action pulsatoire
WO1991012629A1 (fr) * 1990-02-16 1991-08-22 Edward Bok Installation amelioree de transfert et de traitement des tranches
EP0575125B1 (fr) * 1992-06-17 1999-03-24 Raytheon Company Méthode et dispositif de traitement chimique par voie humide de disques semi-conducteurs et d'autres objets
NL1011856C2 (nl) * 1999-04-21 2000-10-24 Asm Internat B V Floating wafer reactor alsmede werkwijze voor het regelen van de temperatuur daarvan.
NL2003836C2 (en) * 2009-11-19 2011-05-23 Levitech B V Floating wafer track with lateral stabilization mechanism.
NL1037629C2 (nl) * 2010-01-15 2011-07-18 Edward Bok Semiconductor tunnel-opstelling, bevattende een stripvormige belichtingspatroon-opbrenginrichting ten behoeve van het tijdelijk daarmede plaatsvinden van een belichtings-proces van deze opvolgende substraat-gedeeltes.
NL1038074C2 (nl) * 2010-06-29 2011-12-30 Edward Bok Semiconductor tunnel-opstelling, bevattende een stripvormige electrische schakelingspatroon-opbreng-inrichting ten behoeve van het daarmede in een tunnelgedeelte plaatsvinden van het aanbrengen van een electrische schakelings-patroon op de opvolgende, zich erdoorheen verplaatsende semiconductor substraat-gedeeltes.
US20160111310A1 (en) * 2014-09-24 2016-04-21 SanDisk Techologies Inc. Wafer Transfer System

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL1011017C2 (nl) * 1999-01-13 2000-07-31 Asm Int Inrichting voor het positioneren van een wafer.
NL2010471C2 (en) * 2013-03-18 2014-09-24 Levitech B V Substrate processing apparatus.

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1983000774A1 (fr) * 1981-08-26 1983-03-03 Edward Bok Procede et appareil de depot de milieux fluides et gazeux sur des substrats pour en effectuer leur transport
WO1983002910A1 (fr) * 1982-02-24 1983-09-01 Edward Bok Procede et dispositif d'application d'un revetement sur un substrat
WO1984001084A1 (fr) * 1982-08-24 1984-03-15 Edward Bok Appareil de traitement de substrats
GB2160898A (en) * 1984-05-30 1986-01-02 Dowty Electronics Ltd Vacuum sputtering apparatus

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1983000774A1 (fr) * 1981-08-26 1983-03-03 Edward Bok Procede et appareil de depot de milieux fluides et gazeux sur des substrats pour en effectuer leur transport
WO1983002910A1 (fr) * 1982-02-24 1983-09-01 Edward Bok Procede et dispositif d'application d'un revetement sur un substrat
WO1984001084A1 (fr) * 1982-08-24 1984-03-15 Edward Bok Appareil de traitement de substrats
GB2160898A (en) * 1984-05-30 1986-01-02 Dowty Electronics Ltd Vacuum sputtering apparatus

Cited By (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1990006590A1 (fr) * 1988-12-01 1990-06-14 Edward Bok Installation amelioree servant au transport et au traitement dans des conditions de double flottement avec action pulsatoire
WO1991012629A1 (fr) * 1990-02-16 1991-08-22 Edward Bok Installation amelioree de transfert et de traitement des tranches
EP0575125B1 (fr) * 1992-06-17 1999-03-24 Raytheon Company Méthode et dispositif de traitement chimique par voie humide de disques semi-conducteurs et d'autres objets
NL1011856C2 (nl) * 1999-04-21 2000-10-24 Asm Internat B V Floating wafer reactor alsmede werkwijze voor het regelen van de temperatuur daarvan.
US6329304B1 (en) 1999-04-21 2001-12-11 A.S.M. International N.V. Floating wafer reactor and method for the regulation of the temperature thereof
WO2011062490A1 (fr) * 2009-11-19 2011-05-26 Levitech B.V. Piste flottante de tranche avec mécanisme de stabilisation latérale
NL2003836C2 (en) * 2009-11-19 2011-05-23 Levitech B V Floating wafer track with lateral stabilization mechanism.
TWI587429B (zh) * 2009-11-19 2017-06-11 Ａｓｍ國際股份有限公司 具橫向穩定機構的浮動式晶圓軌道
KR101786475B1 (ko) 2009-11-19 2017-11-15 에이에스엠 인터내셔널 엔.브이. 측면 안정화 기구를 가지는 부유 웨이퍼 트랙
NL1037629C2 (nl) * 2010-01-15 2011-07-18 Edward Bok Semiconductor tunnel-opstelling, bevattende een stripvormige belichtingspatroon-opbrenginrichting ten behoeve van het tijdelijk daarmede plaatsvinden van een belichtings-proces van deze opvolgende substraat-gedeeltes.
NL1038074C2 (nl) * 2010-06-29 2011-12-30 Edward Bok Semiconductor tunnel-opstelling, bevattende een stripvormige electrische schakelingspatroon-opbreng-inrichting ten behoeve van het daarmede in een tunnelgedeelte plaatsvinden van het aanbrengen van een electrische schakelings-patroon op de opvolgende, zich erdoorheen verplaatsende semiconductor substraat-gedeeltes.
US20160111310A1 (en) * 2014-09-24 2016-04-21 SanDisk Techologies Inc. Wafer Transfer System
US10332770B2 (en) * 2014-09-24 2019-06-25 Sandisk Technologies Llc Wafer transfer system

Also Published As

Publication number Publication date
EP0261145A1 (fr) 1988-03-30
JPS63503024A (ja) 1988-11-02

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