US9929237B2 - Method for manufacturing graphine film electronic device - Google Patents

Method for manufacturing graphine film electronic device Download PDF

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US9929237B2
US9929237B2 US14/924,084 US201514924084A US9929237B2 US 9929237 B2 US9929237 B2 US 9929237B2 US 201514924084 A US201514924084 A US 201514924084A US 9929237 B2 US9929237 B2 US 9929237B2
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gnr
metal wire
thin metal
precursor
manufacturing
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US20160056240A1 (en
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Junichi Yamaguchi
Shintaro Sato
Hiroko Yamada
Kazuki Tanaka
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Fujitsu Ltd
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Fujitsu Ltd
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Definitions

  • the embodiments discussed herein are directed to a graphene film, an electronic device which uses the graphene film, and a method for manufacturing the electronic device.
  • a graphene which has a sheet structure of a monoatomic layer in which carbon atoms are arranged in a honeycomb lattice shape, exhibits quite high mobility at a room temperature, and thus is expected to be adapted for a next-generation electronics material, particularly for a channel material of a field-effect transistor (FET) of low power consumption and fast operation.
  • FET field-effect transistor
  • ⁇ electron conjugate expands two-dimensionally, a band gap is equal to zero and the graphene exhibits a metallic physicality, so that a practically sufficient electric current on-off ratio cannot be obtained in a transistor which uses the graphene as a channel. Therefore, in order to adapt the graphene for a transistor, it is necessary to introduce a band gap to the graphene and to make the graphene into a semiconductor.
  • Non-patent Document 2 As a method for manufacturing a GNR, there are reported a method of forming by using a negative resist (hydro silsesquioxane) by electron beam lithography (for example, see Non-patent Document 2), a method of chemically cutting open a carbon nanotube (for example, see Patent Document 1), a method of forming from graphite flakes dissolved in an organic solvent by a sonochemical method (for example, see Non-patent Document 3), and so on.
  • a negative resist hydro silsesquioxane
  • Patent Document 3 As a method for manufacturing a GNR, there are reported a method of forming by using a negative resist (hydro silsesquioxane) by electron beam lithography (for example, see Non-patent Document 2), a method of chemically cutting open a carbon nanotube (for example, see Patent Document 1), a method of forming from graphite flakes dissolved in an organic solvent by a sonochemical method (for example, see Non
  • GNR edge structures There exist two kinds of GNR edge structures, of what is called a zigzag type in which carbon atoms are arranged in a zigzag shape, and of what is called an armchair type in which carbon atoms are arranged at a two-atom period.
  • the armchair type GNR has a band gap and exhibits a semiconductive property.
  • the zigzag type GNR exhibits a metallic property.
  • Non-patent Document 2 When the GNR is formed by a method depicted in Non-patent Document 2, Non-patent Document 3, or Patent Document 1 described above, there is a problem that control of a uniform edge structure is difficult and that the zigzag type edge structure and the armchair type edge structure exist in a mixed manner. Further, it is also difficult to make ribbon widths uniform.
  • Non-patent Document 4 since a benzene ring uses a precursor based on three anthracene skeletal structures, it is impossible to form a GNR with a ribbon width of 1 nm or more. From a viewpoint of FET designing, controlling a size of a band gap by changing a ribbon width of a GNR is a significant technique, but in high-order acene with four or more benzene rings, a plurality of benzene rings with high reactivity exist in the inner side and thus stable linear coupling is not done, and there is a possibility that a GNR with random edge structures are consequently formed.
  • a graphene film of the present invention is a ribbon-shaped graphene film and includes: five or more six-membered rings of carbon atoms which are bonded and arranged in line in a short side direction; and an armchair type edge structure along a long side direction.
  • An electronic device of the present invention includes: an insulating material; a pair of electrodes on the insulating material; a ribbon-shaped graphene film bridged by the pair of electrodes, wherein the graphene film has five or more six-membered rings of carbon atoms which are bonded and arranged in line in a short side direction and an armchair type edge structure along a long side direction.
  • a method for manufacturing an electronic device of the present invention includes: forming a thin metal wire on an insulating material; forming a ribbon-shaped graphene film that has five or more six-membered rings of carbon atoms which are bonded and arranged in line in a short side direction and an armchair type edge structure along a long side direction, on the thin metal wire; and removing the thin metal wire.
  • FIG. 1A are schematic diagrams illustrating a method for manufacturing a GNR according to a first embodiment in order of steps
  • FIG. 1B are schematic diagrams illustrating the method for manufacturing the GNR according to the first embodiment in order of steps
  • FIG. 1C is a schematic diagram illustrating the method for manufacturing the GNR according to the first embodiment in order of steps
  • FIG. 2A is a schematic diagram illustrating a synthetic scheme of a pentacene GNR in the first embodiment
  • FIG. 2B is a schematic diagram illustrating the synthetic scheme of the pentacene GNR in the first embodiment
  • FIG. 2C is a schematic diagram illustrating the synthetic scheme of the pentacene GNR in the first embodiment
  • FIG. 2D is a schematic diagram illustrating the synthetic scheme of the pentacene GNR in the first embodiment
  • FIG. 3A is a schematic diagram illustrating a synthetic scheme of a heptacene GNR in a modification example 1 of the first embodiment
  • FIG. 3B is a schematic diagram illustrating the synthetic scheme of the heptacene GNR in the modification example 1 of the first embodiment
  • FIG. 3C is a schematic diagram illustrating the synthetic scheme of the heptacene GNR in the modification example 1 of the first embodiment
  • FIG. 4A is a schematic diagram illustrating a synthetic scheme of a nonacene GNR in a modification example 2 of the first embodiment
  • FIG. 4B is a schematic diagram illustrating the synthetic scheme of the nonacene GNR in the modification example 2 of the first embodiment
  • FIG. 4C is a schematic diagram illustrating the synthetic scheme of the nonacene GNR in the modification example 2 of the first embodiment
  • FIG. 4D is a schematic diagram illustrating the synthetic scheme of the nonacene GNR in the modification example 2 of the first embodiment
  • FIG. 5A are schematic diagrams illustrating a method for manufacturing a graphene transistor according to a second embodiment in order of steps
  • FIG. 5B are schematic diagrams illustrating the method for manufacturing the graphene transistor according to the second embodiment in order of steps
  • FIG. 5C are schematic diagrams illustrating the method for manufacturing the graphene transistor according to the second embodiment in order of steps.
  • FIG. 5D are schematic diagrams illustrating the method for manufacturing the graphene transistor according to the second embodiment in order of steps.
  • FIG. 1A to FIG. 1C are schematic diagrams illustrating the method for manufacturing the GNR according to the first embodiment in order of steps
  • FIG. 1A and FIG. 1B right side drawings are plan views
  • left side drawings are cross-sectional views taken along dashed lines I-I′ of the plan views.
  • an insulating substrate 1 is prepared and a thin metal wire 2 which has a (111) crystal surface is formed on the insulating substrate 1 .
  • a mica substrate As the insulating substrate 1 , a mica substrate, a C-surface sapphire ( ⁇ -Al 2 O 3 ) crystal substrate, MgO (111) crystal substrate, and so on, for example, are applicable as a substrate of an insulating crystal, and the mica substrate is used in this embodiment.
  • a thin metal wire material As a thin metal wire material, at least one kind selected from Au, Ag, Cu, Co, Ni, Pd, Ir, Pt, and so on is applicable. By properly selecting the kind of the substrate, an epitaxial crystal surface of such a metal can be obtained.
  • Au is used as the thin metal wire material. It is well known that Au is highly oriented in a (111) surface on the mica substrate.
  • a double-layer resist for forming a desired fine line pattern is spin-coated on a cleaved surface of the insulating substrate 1 .
  • a sacrificial layer resist of a lower layer PMGI SFG2S (manufactured by MiChrochem Corp.), for example, is used, and for an electron beam resist of an upper layer, a resist obtained by diluting ZEP520A (manufactured by ZEON CORPORATION) by ZEP-A (manufactured by ZEON CORPORATION) at a ratio of 1:1, for example, is used.
  • a resist pattern which has an opening of a thin wire shape of about 10 nm to about 100 nm in width and about 100 nm to about 500 nm in length is formed in the resist by electron beam lithography.
  • the substrate is heated to about 100° C. to about 200° C., for example to about 150° C., in a vacuum chamber (degree of vacuum is 1 ⁇ 10 ⁇ 7 Pa or less)
  • Au is deposited on the insulating substrate 1 by a vapor deposition method at a vapor deposition speed of about 0.05 nm/s to about 5 nm/s, for example at about 0.5 nm/s.
  • Au is deposited to a thickness of about 10 nm to about 100 nm, for example of about 20 nm.
  • Ti may be deposited to a thickness of about 0.5 nm to about 1 nm between Au and the insulating substrate 1 .
  • a deposition method of a thin metal wire material it is also possible to use a sputtering method, a pulse laser deposition method, a molecular beam epitaxy method, or the like, instead of the vapor deposition method.
  • the thin metal wire 2 which has the (111) surface is formed on the insulating layer 1 .
  • the thin metal wire 2 is formed to have a thickness of about 20 nm, a width (size in a short side direction) of about 20 nm, and a length (size in a long side direction) of about 200 nm.
  • a cleaning processing of an Au surface is repeated plurality of cycles, here, repeated four cycles.
  • Ar ion sputtering is carried out for one minute, with an ion acceleration voltage being set at about 0.8 kV and an ion current being set at about 1.0 ⁇ A, and ultrahigh vacuum annealing is carried out for 15 minutes at about 470° C. while the degree of vacuum is kept at 5 ⁇ 10 ⁇ 7 or less.
  • a GNR 3 is formed on the thin metal wire 2 .
  • the GNR 3 is formed in situ on the (111) surface of the thin metal wire 2 in the vacuum chamber of the ultrahigh vacuum degree, without exposing the insulating substrate 1 and the thin metal wire 2 to the atmosphere.
  • the GNR 3 has a monoatomic structure, in which five or more six-membered rings (benzene rings) of carbon atoms are bonded and arranged in line in a short side direction and an edge structure along a long side direction is of complete armchair type.
  • a pentacene GNR which is constituted with five bonded benzene rings and whose ribbon width (size in a short side direction) is about 1.2 nm.
  • FIG. 2A A structural formula of a pentacene dimer precursor is illustrated in FIG. 2A .
  • a Br group is introduced to each one side of the benzene rings in the center of two pentacene skeletal structures.
  • a thermal conversion type precursor becomes high in stability.
  • the pentacene dimer precursor is sublimated by using a K-cell type evaporator under ultrahigh vacuum of 5 ⁇ 10 ⁇ 8 Pa or less, for example, and vapor-deposited on the thin metal wire 2 .
  • a vapor-deposition speed is about 0.05 nm/min to about 0.1 nm/min.
  • a substrate temperature is raised, and through processes illustrated in FIG. 2B to FIG. 2C , a pentacene GNR of FIG. 2D is finally formed.
  • the pentacene dimer precursor of FIG. 2A is vapor-deposited on the insulating substrate 1 having been heated to about 180° C. to about 250° C., for example.
  • the pentacene dimer precursors are coupled in line by radical polymerization.
  • the bicyclo skeletal structure is aromatized by a reverse Diels-Alder reaction and a C 2 H 4 molecule is eliminated.
  • a macromolecule in which pentacenes are linearly coupled is obtained.
  • the substrate temperature is raised to about 350° C. to about 450° C., for example, and the temperature is kept for about 10 minutes to about 20 minutes.
  • a pentacene GNR which has a uniform width of about 1.2 nm and in which an edge structure along a long side direction is of complete armchair type is formed by a ring-condensation reaction.
  • a band gap of the pentacene GNR of about 1.2 nm in width obtained as described above is estimated to be about 0.9 eV from a first-principles calculation (for example, see Non-patent Document 1).
  • the pentacene GNR on the thin metal wire which has the (111) crystal surface, it becomes possible to control a position and a direction of the pentacene GNR, and the pentacene GNR can be obtained by a simpler manufacturing process without carrying out a high-risk transfer process of a GNR.
  • a GNR is fabricated similarly to in the first embodiment, but a case where a heptacene GNR is fabricated as a GNR instead of the pentacene GNR will be exemplified.
  • a thin metal wire 2 which has a (111) crystal surface is formed on an insulating substrate 1 .
  • a GNR 3 is formed on the thin metal wire 2 .
  • the GNR 3 is formed a heptacene GNR which is constituted with seven bonded benzene rings and whose ribbon width (size in a short side direction) is about 1.7 nm.
  • an optical conversion type precursor method by light irradiation is used in addition to a thermal conversion type precursor method by substrate heating.
  • FIG. 3A A structural formula of the heptacene precursor is illustrated in FIG. 3A .
  • Br groups are respectively introduced to both sides of a benzene ring in the center of one heptacene skeletal structure.
  • the heptacene precursor is sublimated by using a K-cell type evaporator under ultrahigh vacuum of 5 ⁇ 10 ⁇ 8 Pa or less, for example, and vapor-deposited on the thin metal wire 2 .
  • a vapor-deposition speed is about 0.05 nm/min to about 0.1 nm/min.
  • the heptacene precursor of FIG. 3A is vapor-deposited on the insulating substrate 1 having been heated to about 180° C. to about 250° C., while blue light of about 470 nm in wavelength is being irradiated to the insulating substrate 1 and the thin metal wire 2 .
  • a substrate temperature is raised to about 250° C. to about 300° C., for example, whereby a bicyclo skeletal structure is aromatized by a reverse Diels-Alder reaction and a CO molecule is eliminated.
  • a macromolecule in which heptacenes are linearly coupled is obtained.
  • the substrate temperature is raised to about 350° C. to about 450° C., for example, and the temperature is kept for about 10 minutes to about 20 minutes.
  • a heptacene GNR which has a uniform width of about 1.7 nm and in which an edge structure along a long side direction is of complete armchair type is formed by a ring-condensation reaction.
  • a band gap of the heptacene GNR of about 1.7 nm in width obtained as described above is estimated to be about 1.4 eV from a first-principles calculation (for example, see Non-patent Document 1).
  • the heptacene GNR on the thin metal wire which has the (111) crystal surface, it becomes possible to control a position and a direction of the heptacene GNR, and the heptacene GNR can be obtained by a simpler manufacturing process without carrying out a high-risk transfer process of a GNR.
  • a thin metal wire 2 which has a (111) crystal surface is formed on an insulating substrate 1 .
  • a GNR 3 is formed on the thin metal wire 2 .
  • the GNR 3 is formed a nonacene GNR which is constituted with nine bonded benzene rings and whose ribbon width (size in a short side direction) is about 2.2 nm.
  • an optical conversion type precursor method by light irradiation is used in addition to a thermal conversion type precursor method by substrate heating.
  • FIG. 4A A structural formula of the nonacene precursor is illustrated in FIG. 4A .
  • this nonacene precursor it is unnecessary to introduce a Br group to a benzene ring of the center as a reactive site, since nonacene itself has a biradical property.
  • the nonacene precursor is sublimated by using a K-cell type evaporator under ultrahigh vacuum of 5 ⁇ 10 ⁇ 8 Pa or less, for example, and vapor-deposited on the thin metal wire 2 .
  • a vapor-deposition speed is about 0.05 nm/min to about 0.1 nm/min.
  • the nonacene precursor of FIG. 4A is vapor-deposited on the insulating substrate 1 having been heated to about 180° C. to about 250° C., for example, while blue light of about 470 nm in wavelength is being irradiated to the insulating substrate 1 and the thin metal wire 2 .
  • a state at this time is illustrated in FIG. 4B .
  • a substrate temperature is raised to about 250° C. to about 300° C., for example, whereby a bicyclo skeletal structure is aromatized by a reverse Diels-Alder reaction and a CO molecule is eliminated.
  • a macromolecule in which nonacenes are linearly coupled is obtained.
  • the substrate temperature is raised to about 350° C. to about 450° C., for example, and the temperature is kept for about 10 minutes to about 20 minutes.
  • a nonacene GNR which has a uniform width of about 2.2 nm and in which an edge structure along a long side direction is of complete armchair type is formed by a ring-condensation reaction.
  • a band gap of the nonacene GNR of about 2.2 nm in width obtained as described above is estimated to be about 1.7 eV from a first-principles calculation (for example, see Non-patent Document 1).
  • the nonacene GNR on the thin metal wire which has the (111) crystal surface, it becomes possible to control a position and a direction of the nonacene GNR, and the nonacene GNR can be obtained by a simpler manufacturing process without carrying out a high-risk transfer process of a GNR.
  • FIG. 5A to FIG. 5D are schematic diagrams illustrating a method for manufacturing a graphene transistor according to a second embodiment in order of steps
  • FIG. 5A to FIG. 5D right side drawings are plan views
  • left side drawings are cross-sectional views taken along dashed lines I-I′ of the plan views.
  • a thin metal wire 2 is formed on an insulating substrate 1 , and a GNR 3 is formed on the thin metal wire 2 .
  • a state at this time is illustrated in FIG. 5A .
  • any one of GNRs of the pentacene GNR described in the first embodiment, the heptacene GNR described in the modification example 1, and the nonacene GNR described in the modification example 2 is formed.
  • a source electrode 4 and a drain electrode 5 are formed.
  • a resist pattern made of a double-layer resist is formed by electron beam lithography.
  • Ti and Cr are sequentially deposited by a vapor deposition method under ultrahigh vacuum of 1 ⁇ 10 ⁇ 5 Pa or less.
  • a vapor deposition speed is about 0.05 nm/s to about 0.1 nm/s and a thickness thereof is about 0.5 nm to about 1 nm.
  • a vapor deposition speed is about 0.1 nm/s to about 1 nm/s and a thickness thereof is about 30 nm to about 50 nm.
  • a deposition method for the electrode material it is also possible to use a sputtering method, a pulse laser deposition method, or the like, instead of the vapor deposition method.
  • the resist pattern and Ti and Cr thereon are removed by lift-off.
  • the source electrode 4 and the drain electrode 5 electrically connected to each end portion of the thin metal wire 2 are formed.
  • the thin metal wire 2 is finally removed by wet etching being a post step. Therefore, metal species of the electrode materials of the source electrode 4 and the drain electrode 5 are required to have sufficient etching resistance to metal species of the thin metal wire 2 .
  • a FeCl 3 aqueous solution can be used for the etchant for wet etching thereof.
  • a source electrode and a drain electrode are formed, it is necessary to properly choose metal species which have sufficient etching resistance to such aqueous solutions.
  • a gate electrode 7 is formed on the thin metal wire 2 between the source electrode 4 and the drain electrode 5 via a gate insulating film 6 .
  • a resist pattern made of a double-layer resist is formed by electron beam lithography.
  • an insulating material of the gate insulating film and an electrode material of the gate electrode are sequentially deposited.
  • the insulating material Y 2 O 3 , for example, is used, and for the electrode material, Ti and Cr, for example, are used, respectively.
  • Y 2 O 3 is formed by vapor-depositing Y metal while introducing O 2 gas under ultrahigh vacuum of 1 ⁇ 10 ⁇ 5 Pa or less.
  • Ti and Cr are formed by vapor-deposition under vapor-deposition condition and to a thickness similar to those at a time of formation of the source electrode 4 and the drain electrode 5 .
  • a deposition method for the insulating material and the electrode material it is possible to use a sputtering method, a pulse laser deposition method, or the like, instead of the vapor-deposition method.
  • a top gate stack structure of the gate insulating film 6 and the gate electrode 7 is formed in a manner not to overlap the source electrode 4 and the drain electrode 5 between the source electrode 4 and the drain electrode 5 and in a manner to intersect the thin metal wire 2 on the thin metal wire 2 .
  • the gate electrode 7 is formed to have a gate length of about 50 nm, for example.
  • the gate insulating film As an insulating material of the gate insulating film, it is also possible to use SiO 2 , HfO 2 , ZrO 2 , La 2 O 3 , TiO 2 , or the like instead of Y 2 O 3 , by a vapor deposition method in which oxygen gas is introduced similarly to in deposition of Y 2 O 3 .
  • the insulating material of the gate insulating film and the electrode material of the gate electrode prefferably have sufficient etching resistance to the etchant for wet etching used in a removing processing, being a post step, of the thin metal wire.
  • the thin metal wire 2 is removed by wet etching.
  • the thin metal wire 2 is wet-etched by using a HNO 3 (6.5 vol %)+HCI (17.5 vol %) mixed aqueous solution of about 60° C. as an etchant. Thereby, the thin metal wire 2 is removed. A gap 8 is formed between the insulating substrate 1 and the GNR 3 , and the GNR 3 becomes in a state of being bridged by the source electrode 4 and the drain electrode 5 .
  • a cleaning processing in which pure water is used and a rinsing processing in which isopropyl alcohol is used are sequentially carried out to the insulating substrate 1 .
  • a subsequent drying processing with the aim of preventing cutting of the GNR by a surface tension or a capillary force of a solution, a supercritical drying processing in which CO 2 gas is used, for example, is carried out.
  • the GNR 3 obtained by the first embodiment or the modification examples for the channel there is obtained a graphene transistor which exhibits an excellent band gap and which has high reliability to materialize an electric current on-off ratio of 10 5 or more at a time of operation at a room temperature.
  • the graphene transistor is exemplified as an electronic device in which the GNR according the first embodiment is used, the present invention is not limited thereto.
  • the present invention it is possible to apply the present invention to a display or the like in which a GNR is used for a display electrode.
  • a graphene film which has an armchair type edge structure with a uniform width at a desired value and which enables an electric current on-off ratio of 10 5 or more that is practically sufficient for exhibiting a desired band gap, and a highly reliable electronic device that has the same.

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