TW201442952A - 石墨烯(graphene)膜、電子裝置、及電子裝置之製造方法 - Google Patents
石墨烯(graphene)膜、電子裝置、及電子裝置之製造方法 Download PDFInfo
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- 229910021389 graphene Inorganic materials 0.000 title claims abstract description 46
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- QSQIGGCOCHABAP-UHFFFAOYSA-N hexacene Chemical compound C1=CC=CC2=CC3=CC4=CC5=CC6=CC=CC=C6C=C5C=C4C=C3C=C21 QSQIGGCOCHABAP-UHFFFAOYSA-N 0.000 description 3
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- 238000006742 Retro-Diels-Alder reaction Methods 0.000 description 1
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- MWPLVEDNUUSJAV-UHFFFAOYSA-N anthracene Chemical compound C1=CC=CC2=CC3=CC=CC=C3C=C21 MWPLVEDNUUSJAV-UHFFFAOYSA-N 0.000 description 1
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- 239000003960 organic solvent Substances 0.000 description 1
- BPUBBGLMJRNUCC-UHFFFAOYSA-N oxygen(2-);tantalum(5+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5] BPUBBGLMJRNUCC-UHFFFAOYSA-N 0.000 description 1
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Abstract
GNR係帶狀石墨烯(graphene)膜,其在短邊方向鍵結且並列有5個以上(例如5個、7個、或9個)碳原子六員環,且沿著長邊方向的邊緣結構為完全的扶手椅(armchair)型。藉由該構成可實現可靠性高的石墨烯膜,該石墨烯膜係不必使用轉印法而具有寬度與所需要的值一致之扶手椅型的邊緣結構,且可實現能顯示預期的能帶隙(band gap)之在實用上為充分之105以上的電流ON/OFF比。
Description
本發明係有關於一種石墨烯膜、使用石墨烯膜之電子裝置、及電子裝置之製造方法。
具有碳原子為蜂窩晶格狀地排列而成的單原子層之薄片結構之石墨烯,因為在室溫顯示非常高的移動度,所以被期待應用作為下世代的電子材料、特別是作為低消耗電力及高速動作的電場效果電晶體(FET)之通道材料。但是因為石墨烯之π電子共軛係在二維擴張,所以能帶隙等於零且顯示金屬的物性,所以將石墨烯使用在通道之電晶體,在實用上係無法得到充分的電流ON/OFF比。因此,為了將石墨烯應用在電晶體,必須將能帶隙導入至石墨烯而使其半導體化。
作為將能帶隙導入至石墨烯的方法之一,有使二維的石墨烯薄片成為數nm~數十nm寬度的薄長方形狀而帶狀化成為一維,來形成石墨烯奈米帶(GNR)之手法。已知在該GNR,能帶隙係藉由量子局限效應(quantum confinement
effect)而打開,而且其間隙大小係因帶寬度而變化(例如,參照非專利文獻1)。
作為GNR的製造方法,有報告揭示使用負型光阻(氫化倍半矽氧烷;hydrogen silsesquioxane)且藉由電子射線微影術來形成之方法(例如,參照非專利文獻2);將奈米碳管化學切開之方法(例如,參照專利文獻1);及藉由聲化學(sonochemical)從溶解於有機溶劑之石墨碎形成之方法(例如,參照非專利文獻3)等。
最近,有揭示一種方法,其係合成蒽二聚物,將該等在超高真空下蒸鍍在具有原子等級且平坦的(111)結晶面之Au或Ag的金屬基板上,而且藉由加熱基板引起的自由基反應來進行連結/縮環而由下而上地形成GNR(例如,參照非專利文獻4)。
專利文獻1:日本特開2012-158514號公報
非專利文獻1:L. Yang等人,物理評論通訊(Phys. Rev. Lett.),99, 186801(2007)
非專利文獻2:M. Y. Han等人,物理評論通訊(Phys. Rev. Lett.) 98, 206805(2007)
非專利文獻3:X. Li等人,科學期刊(Science),319, 1229(2008)
非專利文獻4:J. Cai等人,自然期刊(Nature),466,
470(2010)
GNR的邊緣結構,係存在有碳原子為鋸齒狀配列而成之所謂鋸齒型;及以2原子周期配列而成之所謂扶手椅型之2種類。扶手椅型的GNR係具有能帶隙且顯示半導體的性質。相對於此,鋸齒型的GNR係顯示金屬性質。
使用在上述的非專利文獻2、非專利文獻3、專利文獻1所揭示的方法來形成GNR時,控制均勻的邊緣結構係困難的,而且有鋸齒型的邊緣結構與扶手椅型的邊緣結構摻雜之課題。而且,使帶寬度為均勻且一致亦是困難的。
為了形成邊緣結構、以及帶寬度為一致之扶手椅型的GNR,如在非專利文獻4所揭示,從蒽二聚物在Au(111)基板上或Ag(111)基板上藉由熱能進行聚合之方法係理想的。
但是在非專利文獻4,因為係使用苯環為3個的蒽骨架作為基本之前驅物,而無法形成帶寬度為1nm以上的GNR。從FET設計之觀點,改變GNR的帶寬度而控制能帶隙大小係重要的技術,但是因為苯環為4個以上的高級次并苯(acene)時,在內側係存在有複數個反應性高的苯環,所以無法安定且直線地被連結,結果,有形成無規邊緣結構的GNR之可能性。
又,為了使用依照非專利文獻4的方法所形成的
GNR而製造FET,係被要求將GNR從金屬基板分開且轉印至其他的絕緣基板(例如,在表面形成有矽氧化膜之Si基板)之風險高的製程。而且,因為無法控制如此被轉印後之GNR的位置及方向,所以在GNR形成電極之步驟等的FET製造製程係非常困難的,而被要求較簡便的製程。
本發明係鑒於上述的課題而進行,其目的係提供一種可靠性高的石墨烯膜、電子裝置、及電子裝置之製造方法,其中該石墨烯膜係不必使用轉印法而具有寬度與所需要的值一致之扶手椅型的邊緣結構,且可實現能顯示預期的能帶隙(band gap)之在實用上為充分之105以上的電流ON/OFF比。
本發明的石墨烯膜係帶狀石墨烯膜,係在短邊方向鍵結且並列有5個以上碳原子六員環,且沿著長邊方向的邊緣結構為完全的扶手椅型。
本發明的電子裝置係含有:絕緣材料;前述絕緣材料上的一對電極;及被前述一對電極橋接之帶狀石墨烯膜;前述石墨烯膜係在短邊方向鍵結且並列有5個以上碳原子六員環,且沿著長邊方向的邊緣結構為完全的扶手椅型。
本發明的電子裝置之製造方法係含有:在絕緣材料上形成金屬細線之步驟;在前述金屬細線上形成帶狀石墨烯膜之步驟,該帶狀石墨烯膜係在短邊方向鍵結且並列有5個以上碳原子六員環,且沿著長邊方向的邊緣結構為完
全的扶手椅型;及除去前述金屬細線之步驟。
依照本發明,可實現不必使用轉印法而可得到具有寬度與所需要的值一致之扶手椅型的邊緣結構,而且可得到能顯示預期的能帶隙之在實用上為充分之105以上的電流ON/OFF比之石墨烯膜及具備該石墨烯膜之可靠性高的電子裝置。
1‧‧‧絕緣基板
2‧‧‧金屬細線
3‧‧‧GNR(石墨烯奈米帶)
4‧‧‧源極電極
5‧‧‧汲極電極
6‧‧‧閘極絕緣膜
7‧‧‧閘極電極
8‧‧‧空隙
圖1A係顯示依照步驟順序使用第1實施形態之GNR的製造方法之示意圖。
圖1B係顯示依照步驟順序使用第1實施形態之GNR的製造方法之示意圖。
圖1C係顯示依照步驟順序使用第1實施形態之GNR的製造方法之示意圖。
圖2A係顯示在第1實施形態之并五苯(pentacene)GNR的合成流程之示意圖。
圖2B係顯示在第1實施形態之并五苯GNR的合成流程之示意圖。
圖2C係顯示在第1實施形態之并五苯GNR的合成流程之示意圖。
圖2D係顯示在第1實施形態之并五苯GNR的合成流程之示意圖。
圖3A係顯示在第1實施形態的變形例1之并七苯(heptacene)GNR的合成流程之示意圖。
圖3B係顯示在第1實施形態的變形例1之并七苯GNR的合成流程之示意圖。
圖3C係顯示在第1實施形態的變形例1之并七苯GNR的合成流程之示意圖。
圖4A係顯示在第1實施形態的變形例2之并九苯(nonacene)GNR的合成流程之示意圖。
圖4B係顯示在第1實施形態的變形例2之并九苯GNR的合成流程之示意圖。
圖4C係顯示在第1實施形態的變形例2之并九苯GNR的合成流程之示意圖。
圖4D係顯示在第1實施形態的變形例2之并九苯GNR的合成流程之示意圖。
圖5A係顯示依照步驟順序使用第2實施形態之石墨烯電晶體的製造方法之示意圖。
圖5B係顯示依照步驟順序使用第2實施形態之石墨烯電晶體的製造方法之示意圖。
圖5C係顯示依照步驟順序使用第2實施形態之石墨烯電晶體的製造方法之示意圖。
圖5D係顯示依照步驟順序使用第2實施形態之石墨烯電晶體的製造方法之示意圖。
以下,邊參照圖式邊詳細地說明應用本發明之適合的各實施形態。又,在以下的圖式,在圖示的方便上,
關於大小、厚度等係有未相對正確地顯示之構成構件。
(第1實施形態)
在本實施形態,關於GNR的構成係與其製造方法同時說明。
圖1A~圖1C係依照第1實施形態之GNR的製造方法之示意圖,在圖1A、圖1B,右側為平面圖,左側為沿著平面圖的一點鏈線I-I’之剖面圖。
首先,如圖1A所顯示,準備絕緣基板1且在絕緣基板1上形成具有(111)結晶面之金屬細線2。
作為絕緣基板1,就絕緣性結晶的基板而言,例如可應用雲母基板、c面藍寶石(α-Al2O3)結晶基板、MgO(111)結晶基板等,在本實施形態,係使用雲母基板。
作為金屬細線材料,可應用選自於Au、Ag、Cu、Co、Ni、Pd、Ir、Pt等中之至少1種。藉由適當地選擇基板的種類,可得到該等金屬的磊晶成長結晶面。在本實施形態,係使用Au作為金屬細線材料。已熟知Au係在雲母基板上高配向於(111)面。
詳言之,首先,係藉由在大氣中將雲母基板之絕緣基板1劈開,而得到絕緣基板1的清淨表面。
其次,在絕緣基板1的劈開面上,將用以形成預期的細線圖案之2層光阻進行旋轉塗布。下層的犠牲層光阻係例如使用PMGI SFG2S(Michrochem公司製);而上層的電子射線光阻係例如使用將ZEP520A(日本ZEON公司製)以ZEP-A(同公司製)稀釋成為1:1而成之光阻。
其次,藉由電子射線微影術,在光阻形成具有寬度10nm左右~100nm左右、長度100nm左右~500nm左右的細線形狀開口之光阻圖案。隨後,在真空槽(真空度1×10-7Pa以下)內,邊將基板加熱至100℃左右~200℃左右、例如150℃左右,邊在絕緣基板1上藉由蒸鍍法以0.05nm/s左右~5nm/s左右的蒸鍍速度、例如0.5nm/s左右堆積Au。Au係被堆積10nm左右~100nm左右、例如20nm左右的厚度。
又,為了提高Au與絕緣基板1的密著性,亦可在Au與絕緣基板1之間將Ti堆積0.5nm左右~1nm左右的厚度。
而且,作為金屬細線材料的堆積方法,亦可利用濺鍍法、脈衝雷射堆積法、分子線磊晶法等來代替蒸鍍法。
在絕緣基板1上堆積Au之後,係藉由剝落而將光阻圖案及其上的Au除去。依照以上,可在絕緣基板1上形成具有(111)面之金屬細線2。金屬細線2係例如形成厚度為20nm左右、寬度(短邊方向的尺寸)為20nm左右、長度(長邊方向的尺寸)為200nm左右。
其次,對金屬細線2,進行將Ar離子濺鍍及超高真空退火設為1系列之Au表面的清淨處理複數循環,在此係重複進行4循環。表面清淨處理係每1系列,針對Ar離子濺鍍,係將離子加速電壓設定為0.8kV左右、將離子電流設定為1.0μA左右而進行1分鐘,針對超高真空退火,係保持5×10-7Pa以下的真空度之同時,於470℃左右進行15分鐘。
藉由該表面清淨處理,可將在剝落時附著於Au表面之
光阻等的有機系殘留物除去。而且,可在金屬細線2得到Au的(111)再構成表面且原子等級的平坦性係進一步提升。
接著,如圖1B所顯示,在金屬細線2上形成GNR3。
詳言之,係藉由熱變換型前驅物法,不必將絕緣基板1及金屬細線2暴露在大氣中,而是在超高真空度的真空槽內在金屬細線2的(111)表面上就地(in situ)形成GNR3。
如圖1C所顯示,GNR3係單原子層結構,其在短邊方向鍵結且並列有5個以上碳原子六員環(苯環),且沿著長邊方向的邊緣結構為完全的扶手椅型。在本實施形態,作為GNR3,係鍵結苯環5個而成,而且帶寬度(短邊方向的尺寸)係形成1.2nm左右的并五苯GNR。
以下,使用圖2A~圖2D而說明藉由熱變換型前驅物法之并五苯GNR的形成過程。
將并五苯二聚物前驅物的結構式顯示在圖2A。在該并五苯二聚物前驅物,係在2個并五苯骨架之中央的苯環的各自一側導入Br基。藉由在并五苯骨架的兩端導入雙環骨架,而成為安定性高的熱變換型前驅物。
將該并五苯二聚物前驅物,例如在5×10-8Pa以下的超高真空下使用K-cell型蒸發器使其昇華而蒸鍍在金屬細線2上。蒸鍍速度係設為0.05nm/min左右~0.1nm/min左右。
如以下,逐漸提高基板溫度且經過在圖2B~圖2C所顯示的過程,最後可形成圖2D的并五苯GNR。
首先,將圖2A的并五苯二聚物前驅物,蒸鍍在經加熱至例如180℃左右~250℃左右的絕緣基板1上。此時如圖2B所顯示,藉由自由基聚合,并五苯二聚物前驅物係在直線上連結。
其次,藉由將基板溫度升溫至例如250℃左右~300℃左右,藉由逆狄耳士-阿德爾反應(retro Diels-Alder reaction),雙環骨架被芳香化而C2H4分子脫離。藉此,如圖2C所顯示,可得到并五苯直線地連結而成之高分子。
然後,將基板溫度升溫至例如350℃左右~450℃左右而保持溫度10分鐘左右~20分鐘左右。依照以上,如圖2D所顯示,藉由縮環反應,可形成具有1.2nm左右的均勻寬度,而且沿著長邊方向的邊緣結構為完全的扶手椅型之并五苯GNR。
如上述進行而得到之寬度1.2nm左右的并五苯GNR的能帶隙,從第一原理計算(first-principles calculation)估計為約0.9eV(例如,參照非專利文獻1)。
如以上說明,依照本實施形態,藉由使用熱變換型前驅物法而從高級次并苯前驅物由下而上地進行合成,可形成1.2nm左右的均勻寬度且邊緣結構為一致之完全的扶手椅型之并五苯GNR。
又,藉由在具有(111)結晶面之金屬細線上形成并五苯GNR,可控制并五苯GNR的位置及方向,不必進行風險高的GNR的轉印製程,而可以較簡便的製造製程來得到并五苯GNR。
-變形例-
以下,說明第1實施形態的各種變形例。
(變形例1)
本例係與第1實施形態同樣地製造GNR,但是作為GNR,係例示製造并七苯GNR代替并五苯GNR時之情況。
首先,與第1實施形態同樣地,經過圖1A的步驟而在絕緣基板1上形成具有(111)結晶面之金屬細線2。
接著,與圖1B同樣地在金屬細線2上形成GNR3。在本例,作為GNR3,係鍵結苯環7個而成,而且帶寬度(短邊方向的尺寸)係形成1.7nm左右的并七苯GNR。在本例,為了使并七苯更穩定地聚合,係使除了藉由基板加熱之熱變換型前驅物法以外,亦藉由光照射之光變換型前驅物法。
以下,使用圖3A~圖3C而說明藉由熱變換型前驅物法及光變換型前驅物法之并七苯GNR的形成過程。
將并七苯前驅物的結構式顯示在圖3A。在該并七苯前驅物,係在1個并七苯骨架的中央之苯環的兩側各自導入Br基。
將該并七苯前驅物,例如在5×10-8Pa以下的超高真空下使用K-cell型蒸發器使其昇華而蒸鍍在金屬細線2上。蒸鍍速度係設為0.05nm/min左右~0.1nm/min左右。
如以下,與基板加熱之同時進行光照射,而且經過在圖3B所顯示的過程,最後可形成圖3C的并五苯GNR。
首先,邊對絕緣基板1及金屬細線2照射波長470nm左右的藍色光,邊將圖3A的并七苯前驅物蒸鍍在例
如經加熱至180℃左右~250℃左右之絕緣基板1上。
其次,藉由邊照射上述的藍色光,邊將基板溫度升溫至例如250℃左右~300℃左右,藉由逆狄耳士-阿德爾反應使得雙環骨架被芳香化而CO分子脫離。藉此,可得到如圖3B所顯示之并七苯直線地連結而成之高分子。
然後,邊照射上述的藍色光,邊將基板溫度例如升溫至350℃左右~450℃左右而保持溫度10分鐘左右~20分鐘左右。依照以上,如圖3C所顯示,藉由縮環反應,可形成具有1.7nm左右的均勻寬度,而且沿著長邊方向的邊緣結構為完全的扶手椅型之并七苯GNR。
如上述進行而得到之寬度1.7nm左右的并七苯GNR的能帶隙。從第一原理計算估計為約1.4eV(例如,參照非專利文獻1)。
如以上說明,依照本例,藉由使用熱變換型前驅物法及光變換型前驅物法,而從高級次并苯前驅物由下而上地進行合成,可形成1.7nm左右的均勻寬度且邊緣結構為一致之完全的扶手椅型之并七苯GNR。
又,藉由在具有(111)結晶面之金屬細線上形成并七苯GNR,可控制并七苯GNR的位置及方向,不必進行風險高的GNR的轉印製程,而可以較簡便的製造製程來得到并七苯GNR。
(變形例2)
在本例,係與第1實施形態同樣地製造GNR,但是作為GNR,係例示製造并九苯GNR代替并五苯GNR時之情況。
首先,與第1實施形態同樣地,經過圖1A的步驟而在絕緣基板1上形成具有(111)結晶面之金屬細線2。
接著,與圖1B同樣地在金屬細線2上形成GNR3。在本例,作為GNR3,係鍵結苯環9個而成,而且帶寬度(短邊方向的尺寸)係形成2.2nm左右的并九苯GNR。在本例,為了使并九苯更穩定地聚合,係使除了藉由基板加熱之熱變換型前驅物法以外,亦藉由光照射之光變換型前驅物法。
以下,使用圖4A~圖4D而說明藉由熱變換型前驅物法及光變換型前驅物法之并九苯GNR的形成過程。
將并九苯前驅物的結構式顯示在圖4A。在該并九苯前驅物,係并九苯本身係具有雙自由基性,所以不必在中央的苯環導入Br基作為反應點。
將該并七苯前驅物,例如在5×10-8Pa以下的超高真空下使用K-cell型蒸發器使其昇華而蒸鍍在金屬細線2上。蒸鍍速度係設為0.05nm/min左右~0.1nm/min左右。
如以下,與基板加熱之同時進行光照射,而且經過在圖4B~圖4C所顯示的過程,最後可形成圖4D的并九苯GNR。
首先,邊對絕緣基板1及金屬細線2照射波長470nm左右的藍色光,邊將圖4A的并九苯前驅物蒸鍍在例如經加熱至180℃左右~250℃左右之絕緣基板1上。將此時的情況顯示在圖4B。
其次,藉由邊照射上述的藍色光,邊將基板溫度升溫至例如250℃左右~300℃左右,藉由逆狄耳士-阿德爾反應使得雙環骨架被芳香化而CO分子脫離。藉此,可得到如圖4C
所顯示之并九苯直線地連結而成之高分子。
然後,邊照射上述的藍色光,邊將基板溫度例如升溫至350℃左右~450℃左右而保持溫度10分鐘左右~20分鐘左右。依照以上,如圖4D所顯示,藉由縮環反應,可形成具有2.2nm左右的均勻寬度,而且沿著長邊方向的邊緣結構為完全的扶手椅型之并九苯GNR。
如上述進行而得到之寬度2.2nm左右的并七苯GNR的能帶隙。從第一原理計算估計為約1.7eV(例如,參照非專利文獻1)。
如以上說明,依照本例,藉由使用熱變換型前驅物法及光變換型前驅物法,而從高級次并苯前驅物由下而上地進行合成,可形成2.2nm左右的均勻寬度且邊緣結構為一致之完全的扶手椅型之并九苯GNR。
又,藉由在具有(111)結晶面之金屬細線上形成并九苯GNR,可控制并九苯GNR的位置及方向,不必進行風險高的GNR的轉印製程,而可以較簡便的製造製程來得到并九苯GNR。
(第2實施形態)
在本實施形態,係針對在通道使用GNR之石墨烯電晶體的構成,與其製造方法同時進行說明。
圖5A~圖5D係顯示依照步驟順序使用第2實施形態之石墨烯電晶體的製造方法之示意圖,在圖5A~圖5D,右側為平面圖,左側為沿著平面圖的一點鏈線I-I’之剖面圖。
首先,經過在第1實施形態已說明的圖1A、圖1B
之各步驟而在絕緣基板1上形成金屬細線2,而且在金屬細線2上形成GNR3。將此時的情況顯示在圖5A。
在本實施形態,作為GNR3,係形成在第1實施形態已說明的并五苯GNR、在變形例1已說明的并七苯GNR、及在變形例2已說明的并九苯GNR之中的任一GNR。
接著,如圖5B所顯示,形成源極電極4及汲極電極5。
詳言之,首先,與形成金屬細線2之步驟同樣地進行,藉由電子射線微影術形成由2層光阻所構成之光阻圖案。
其次,作為電極材料,例如依序藉由蒸鍍法在1×10-5Pa以下的高真空下堆積Ti及Cr。針對Ti,係將蒸鍍速度設為0.05nm/s左右~0.1nm/s左右,將厚度設為0.5nm左右~1nm左右。針對Cr,係將蒸鍍速度設為0.1nm/s左右~1nm/s左右,將厚度設為30nm左右~50nm左右。
作為電極材料的堆積方法,亦可利用、濺鍍法、脈衝雷射堆積法等來代替蒸鍍法。
然後,藉由剝落將光阻圖案及其上的Ti及Cr除去。依照以上,可形成與金屬細線2的各端部電連接而成之源極電極4及汲極電極5。
金屬細線2係藉由後步驟的濕式蝕刻在最後被除去。因此,源極電極4及汲極電極5之電極材料的金屬種,必須對金屬細線2的金屬種具有充分的蝕刻耐性。
如後述,在Au(111)的金屬細線2之濕式蝕刻的蝕刻劑,使用HNO3+HCl混合水溶液時,在不溶解於該蝕刻劑之Ti
及Cr,係適合作為電極材料的金屬種。
又,在金屬細線2的材料係使用Cu(111)時,其濕式蝕刻的蝕刻劑可利用FeCl3。此時,形成源極電極及汲極電極時,必須適當地選擇對該等的水溶液具有充分的蝕刻耐性之金屬種。
接著,如圖5C所顯示,在源極電極4與汲極電極5之間之金屬細線2上,透過閘極絕緣膜6而形成閘極電極7。
詳言之,首先,與形成金屬細線2之步驟同樣地進行且藉由電子射線微影術形成由2層光阻所構成之光阻圖案。
其次,依序堆積閘極絕緣膜的絕緣材料及閘極電極的電極材料。各自如以下,絕緣材料係例如使用Y2O3;而電極材料係例如使用Ti及Cr。
Y2O3係藉由在1×10-5Pa以下的高真空下,邊導入O2氣體邊蒸鍍Y金屬來形成。
Ti及Cr係使用與形成源極電極4及汲極電極5時同樣的蒸鍍條件及厚度,藉由蒸鍍來形成。
作為絕緣材料及電極材料的堆積方法,亦可利用濺鍍法、脈衝雷射堆積法等來代替蒸鍍法。
然後,藉由剝落而將光阻圖案及其上的Y2O3、Ti及Cr除去。依照以上,可在源極電極4與汲極電極5之間以與該等不重疊的方式,而且在金屬細線2上以與它交叉的方式,形成閘極絕緣膜6及閘極電極7的上閘極堆疊結構。閘極電極7係例如形成50nm左右的閘極長度。
作為閘極絕緣膜的絕緣材料,亦可藉由與堆積Y2O3同樣地導入氧氣體之蒸鍍法,使用SiO2、HfO2、ZrO2、La2O3、TiO2等代替Y2O3。
閘極絕緣膜的絕緣材料及閘極電極的電極材料,必須對在後步驟之金屬細線的除去處理所使用之濕式蝕刻的蝕刻劑具有充分的蝕刻耐性。
接著,如圖5D所顯示,藉由濕式蝕刻將金屬細線2除去。
詳言之,係使用約60℃的HNO3(6.5vol%)+HCl(17.5vol%)混合水溶液作為蝕刻劑,而將金屬細線2濕式蝕刻。藉此,將金屬細線2除去。在絕緣基板1與GNR3之間形成空隙8,GNR3係呈被源極電極4及汲極電極5橋接之狀態。
將金屬細線2除去之後,係對絕緣基板1依序進行使用純水洗淨處理,及使用異丙醇之沖洗處理。接著,在乾燥處理,係例如進行使用CO2氣體之超臨界乾燥處理,其目的係防止溶液的表面張力和毛細力切斷GNR3。
依照以上,可得到在通道使用依照第1實施形態或各種變形例的GNR之上閘極型的石墨烯電晶體。
藉由通道使用依照本實施形態、第1實施形態或各種變形例所得到的GNR3,可得到顯示優異的能帶隙,而且在室溫動作時實現105以上高的電流ON/OFF比之可靠性高的石墨烯電晶體。
又,在本實施形態,係例示石墨烯電晶體作為使
用依照第1實施形態的GNR之電子裝置,但是本發明係不被此限定。例如,亦可應用在將GNR使用在顯示電極之顯示器等。
依照本發明,係實現不必使用轉印法而可得到具有寬度為與所需要的值一致之扶手椅型的邊緣結構,而且可得到顯示預期的能帶隙之在實用上為充分之105以上的電流ON/OFF比之石墨烯膜及具備該石墨烯膜之可靠性高的電子裝置。
1‧‧‧絕緣基板
2‧‧‧金屬細線
3‧‧‧GNR(石墨烯奈米帶)
Claims (10)
- 一種石墨烯膜,係呈帶狀,該石墨烯膜之特徵在於:其在短邊方向鍵結且並列有5個以上碳原子六員環,且沿著長邊方向的邊緣結構為完全的扶手椅型。
- 如請求項1之石墨烯膜,其在短邊方向鍵結且並列有5個以上碳原子六員環之部分的寬度為1.2nm以上。
- 如請求項1或2之石墨烯膜,其係單原子層結構。
- 一種電子裝置,其特徵在於含有:絕緣材料;前述絕緣材料上的一對電極;及被前述一對電極橋接之帶狀石墨烯膜;前述石墨烯膜係在短邊方向鍵結且並列有5個以上碳原子六員環,且沿著長邊方向的邊緣結構為完全的扶手椅型。
- 如請求項4之電子裝置,其中前述石墨烯膜在短邊方向鍵結且並列有5個以上碳原子六員環之部分的寬度為1.2nm以上。
- 如請求項4或5之電子裝置,其中前述絕緣材料係絕緣性結晶的基板。
- 一種電子裝置之製造方法,其特徵在於含有下述步驟:在絕緣材料上形成金屬細線之步驟;在前述金屬細線上形成帶狀石墨烯膜之步驟,該帶狀石墨烯膜係在短邊方向鍵結且並列有5個以上碳原子 六員環,且沿著長邊方向的邊緣結構為完全的扶手椅型;及除去前述金屬細線之步驟。
- 如請求項7之電子裝置之製造方法,其中前述石墨烯膜在短邊方向鍵結且並列有5個以上碳原子六員環之部分的寬度為1.2nm以上。
- 如請求項7或8之電子裝置之製造方法,其中前述絕緣材料係絕緣性結晶的基板。
- 如請求項7之電子裝置之製造方法,其中前述金屬細線係由選自於Au、Ag、Cu、Co、Ni、Pd、Ir、Pt中之至少1種所形成者。
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