US9231175B2 - Light emitting device with sealing member containing filler particles - Google Patents

Light emitting device with sealing member containing filler particles Download PDF

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Publication number
US9231175B2
US9231175B2 US13/337,154 US201113337154A US9231175B2 US 9231175 B2 US9231175 B2 US 9231175B2 US 201113337154 A US201113337154 A US 201113337154A US 9231175 B2 US9231175 B2 US 9231175B2
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sealing member
filler particles
light emitting
emitting device
parent material
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US20120161621A1 (en
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Masanobu Sato
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Nichia Corp
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Nichia Corp
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/20—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/483—Containers
    • H01L33/486—Containers adapted for surface mounting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/52—Encapsulations
    • H01L33/54—Encapsulations having a particular shape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/52—Encapsulations
    • H01L33/56—Materials, e.g. epoxy or silicone resin
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
    • H01L2224/73265—Layer and wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
    • H01L25/0753—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00 the devices being arranged next to each other
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30—Technical effects
    • H01L2924/301—Electrical effects
    • H01L2924/3025—Electromagnetic shielding
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
    • H01L2933/0091—Scattering means in or on the semiconductor body or semiconductor body package
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/50—Wavelength conversion elements
    • H01L33/508—Wavelength conversion elements having a non-uniform spatial arrangement or non-uniform concentration, e.g. patterned wavelength conversion layer, wavelength conversion layer with a concentration gradient of the wavelength conversion material

Definitions

  • the present invention relates to a light emitting device.
  • JP 2001-077433A describes a light emitting device which includes a semiconductor light emitting element capable of emitting visible light, a light-transmissive mold member covering the semiconductor light emitting element, fluorescent materials contained in the light-transmissive mold member and capable of absorbing visible light from the semiconductor light emitting element and emitting visible light having a longer wavelength than the absorbed visible light, and a light diffusing agent contained in the light-transmissive mold member.
  • the fluorescent materials have a specific gravity larger than that of the light-transmissive mold member and light diffusing agents.
  • the filler particles 40 contained in the sealing member 30 are unevenly distributed in the surface 35 side of the sealing member, so that an irregular geometry associated with the filler particles 40 can be formed efficiently on the surface 35 of the sealing member.
  • the region for forming the irregular geometry may be a part of the surface 35 of the sealing member, but is most preferably approximately the entire area of the surface 35 of the sealing member.
  • the surface clouding can be prevented and the light from the light emitting element can be extracted outside efficiently.
  • the irregular geometry described above allows scattering of incident outside light by the irregular geometry of the sealing member and scattering of outside light incident on the sealing member by the filler particles present in the surface portion.
  • the filler particles 40 having a small specific gravity (hereinafter, when the filler particles 40 are porous, refers to as “bulk density”) with respect to that of the parent material of the sealing member 30 are easily float up.
  • the filler particles 40 having a large specific gravity are easily settled. Therefore, for example, when the specific gravity of the filler particles 40 is smaller than that of the parent material of the sealing member 30 , curing the sealing member 30 with the upper surface of the base substrate 10 , that is the opening of the recess 12 , facing upward, allows the filler particles 40 float up to the surface 35 side of the sealing member and unevenly distributed therein.
  • the sealing member 30 curing the sealing member 30 with the surface 35 of the sealing member exposed, that is, with the surface 35 of the sealing member not in contact with the mold or the like, an irregular geometry associated with the filler particles 40 can be formed on the surface 35 of the sealing member.
  • the sealing member 30 is cured with the upper surface of the base substrate 10 facing upward, as in this case, occurrence of voids in the sealing member 30 can be suppressed compared to the case in which the surface of the base substrate 10 is facing downward.
  • the sealing member 30 is preferably made with a single layer which can be easily formed by a single potting operation, but may be made with a plurality of layers.
  • the filler particles 40 may have a spherical shape, but a deposit of low density can be obtained with the particles having an irregular shape such as a crushed shape, which facilitates arrangement of the filler particles 40 at the surface portion of the sealing member 30 with a small additive amount.
  • the filler particles 40 may be a mixture of a plurality of different kinds of particles.
  • the particles having a large particle size and a large specific gravity are easily settled, and the particles having a small particle size (for example, a particle size in nm range) tends to increase the viscosity of the sealing member 30 even with a small additive amount.
  • the particle size is preferably about 1 to 3 ⁇ m and the specific gravity is preferably about 1.3 to 2.7.
  • the particle size is 1 ⁇ m or more and 1.5 ⁇ m or less, and the specific gravity is 2.2 or more and 2.6 or less.
  • nonporous particles 40 of such specific gravity and particle size For example, adding 15 parts or more of nonporous particles 40 of such specific gravity and particle size to an epoxy resin enables to deposit the particles up to the surface portion of the sealing member to form an irregular geometry on the surface 35 of the sealing member.
  • nonporous particles are suitably used.
  • the filler particles 40 having a larger specific gravity are preferable.
  • the particles 40 of a first filler is added to form an irregular geometry on the surface 35 of the sealing member to reduce the surface gloss. If such irregular geometry can be formed on the surface 35 of the sealing member by using a small additive amount of the filler particles 40 , the usage efficiency of the filler particles 40 can be improved and an increase in the viscosity of the sealing member 30 can be prevented. Accordingly, easiness of molding is improved and adhesion between the sealing member 30 and the base substrate 10 can be improved. For this reason, it is preferable that the filler particles 40 are approximately localized in the surface portion of the sealing member 30 .
  • the term “approximately localized in the surface portion” refers to an extreme example of the cases of unevenly distributed in the surface side”, and indicates a state in which the filler particles 40 are unevenly distributed in the surface portion with a thickness corresponding to a deposit of one to three particles of the filler.
  • an irregular geometry associated with the filler particles 40 can be formed easily in the peripheral portion of the surface 35 of the sealing member, so that incident outside light which is the cause of indirect glare can be scattered efficiently.
  • the recessing amount of the surface 35 of the sealing member is typically about 10 ⁇ m or less, and up to about 150 ⁇ m.
  • the parent material of the sealing member 30 preferably covers the filler particles 40 . That is, it is preferable that the irregular geometry of the surface 35 is formed in a manner that the surface of the parent material of the sealing member 30 is approximately in conformity with the shapes of the filler particles 40 . With this arrangement, the filler particles 40 are prevented from detaching from the sealing member 30 , so that the reliability of the device can be improved. Also, with the irregular geometry of the surface of the parent material of the sealing member 30 and the filler particles 40 in the surface portion of the sealing member 30 , incident outside light can be scattered efficiently.
  • the filler particles 40 may be exposed from the parent material of the sealing member 30 so that the irregular geometry of the surface 35 of the sealing member is formed with the surface of the parent material of the sealing member 30 and the surfaces of the filler particles 40 .
  • the both types of configurations described above may be used in combination.
  • the difference in the refractive index between the parent material of the sealing member 30 and the filler particles 40 is preferably 0.1 or less.
  • silica glass is preferably used as the filler particles 40 .
  • the first filler particles 40 which tend to float and the second filler particles 45 which tend to settle are added to the sealing member 30 , apart of the first filler particles 40 are prevented from floating up by the second filler particles 45 and stay among the second filler particles 45 , but the irregular geometry can be formed on the surface 35 by the first filler particles 40 which float up between the second filler particles 45 to the surface portion.
  • a third region made almost only with the parent material of the sealing member is preferably provided between the first region in which the first filler particles 40 are unevenly distributed and the second region in which the second filler particles 45 are unevenly distributed. This arrangement allows the third region to serve as the light transmitting region, and thus enables to improve the luminosity.
  • the first to third regions are respectively provided in the sealing member 30 , as a form of layers each extends substantially throughout the entire in-plane regions.
  • FIG. 2 is a schematic cross-sectional view of a light emitting device 200 according to Embodiment 2 of the present invention.
  • the base substrate 10 is a circuit board 15 having a conductive wiring on its upper surface and a light emitting element 20 is mounted on the conductive wiring in a flip-chip manner.
  • the sealing member 31 contains the filler particles 41 and seals the light emitting element 20 and molded on the circuit board 15 .
  • the sealing member 31 has an approximately rectangular parallelepiped shape and is capable of emitting light from the surface (upper surface) 35 and the side surfaces.
  • the filler particles 41 are unevenly distributed to the surface 35 side of the sealing member, and the surface 35 of the sealing member has an irregular geometry associated to the filler particles 41 to reduce the surface gloss.
  • Such a sealing member 31 is formed such a way that, a frame 16 for surrounding the light emitting element 20 is provided on the circuit board 15 and the sealing member 31 containing the filler particles 41 is added in drops into the frame 16 , and then cured. At this time, in the case where the specific gravity of the filler particles 41 is larger than that of the parent material of the sealing member 31 , the sealing member 31 is cured with the upper surface of the base substrate 10 facing downward and the surface 35 of the sealing member 35 is exposed. With this, the filler particles 41 are settled to the surface 35 side of the sealing member and the irregular geometry associated with the filler particles 41 can be formed on the surface 35 . Also, the filler particles 41 may be served as a light scattering agent.
  • the first filler particles 41 to be settled at the surface 35 side of the sealing member and the above-described second filler particles 45 may be fluorescent particles such as YAG having a relatively large specific gravity.
  • the frame 16 may be removed after forming the sealing member 31 as in the present example, or retained to serve the package as described above. Alternately, forming the side surfaces of the sealing member 31 by using the frame 16 having an irregular geometry on the inner side surfaces, the side surfaces of the sealing member 31 can be used as the light scattering surfaces.
  • the base substrate is a supporting member for supporting the light emitting element, and including a package, a circuit board, and the like.
  • the package includes a lead electrode which supports the light emitting element and has a function of protecting the light emitting element from the external environment. It is preferable that the package has high mechanical strength and hardly permeates light from the light emitting element and incident outside light. More specifically, a PPA (polyphthalamide) resin, a phenol resin, a BT resin (bismaleimide triazine resin), an epoxy resin, a silicone resin, a ceramics (Al 2 O 3 , AlN, or the like) may be used.
  • the package may be made of white color which is excellent in light extraction efficiency, but at least a part of the upper surface of the package is preferably made of a dark color such as black so as to reduce the reflectance of incident outside light and an irregular geometry may be formed so as to scatter incident outside light.
  • the inner wall defining the recess may also be made of a dark color to enhance display contrast, or the inner wall defining the recess may be made of white color to enhance light extraction efficiency.
  • a circuit board in which a conductive wiring for connecting to a light emitting element and an external terminal is formed on a variety of substrates made of such as a glass epoxy, a ceramics, or an aluminum, can be used.
  • a semiconductor light emitting element for example, an LED element or a semiconductor laser (LD; Laser Diode) element capable of emitting visible light
  • a light emitting element has a structure, for example, a stacked-layer structure including a p-type semiconductor layer, an active layer, and an n-type semiconductor layer is formed on a substrate, using various kinds of semiconductors such as a nitride, a group III-V compound, and a group II-VI compound.
  • a wavelength converting member containing a fluorescent material may be used together.
  • the light emitting device is to be used in a full-color display apparatus
  • three or more light emitting elements capable of emitting red, green, or blue light, respectively, are preferably mounted in one light emitting device.
  • the number of the light emitting element mounted in one light emitting device is not limited thereto and one light emitting element may be used.
  • the combination of the light emitting elements is not limited thereto and a white light emitting element may be used.
  • an epoxy resin or a silicone resin which are excellent in light resistance and heat resistance, are preferable.
  • An epoxy resin can be cured with an acid anhydride curing agent, a cationic curing agent, an amine curing agent, a phenol curing agent, or the like.
  • curing with an acid anhydride curing agent which is excellent in light transmissivity, or curing with a cationic curing agent which is low-volatile and has an excellent productivity is preferable.
  • Curing with an acid anhydride curing agent is preferable compared to curing with a cationic curing agent, because of the lower viscosity, it facilitates floating up or settling down of the filler particles.
  • a silicone resin a dimethyl silicone or phenyl silicone of an addition polymerization type or condensation polymerization type can be used.
  • an addition polymerization type is preferable because it has a small change in the volume and the surface shape due to the dealcoholization reaction during curing.
  • a pigment or a dye may be added to the sealing member to improve display contrast, and/or an antioxidizing agent or an ultraviolet absorbing agent may be added to the sealing member to improve light resistance.
  • silica for example, silica, titanium oxide, calcium carbonate, calcium silicate, ferric oxide, carbon black, zinc oxide, barium titanate, aluminum oxide, or the like can be used.
  • silica is most preferable in view of the specific gravity, the particle size, and the difference in the refractive indices with the parent material of the sealing member, which are suitable for forming the irregular geometry on the surface of the sealing member.
  • calcium silicate, calcium carbonate, and calcium oxide are preferable.
  • an irregular geometry can be formed on the surface of the sealing member.
  • the light emitting device according to Example 1 is an example of the light emitting device 100 according to Embodiment 1 and a surface mount type LED having an outer shape of an approximately rectangular parallelepiped with 3.0 mm in length, 3.0 mm in width, and 1.8 mm in height.
  • the base substrate 10 is a package 11 defining a recess 12 in approximately the center of the upper surface.
  • the package 11 is such that the outer portion is made of a PPA resin containing carbon black and the recess 12 is provided with a PPA resin containing titanium oxide.
  • the recess 12 is defined in approximately square shape with rounded corners in plan view (2.6 mm in length, 2.6 mm in width, and 0.8 mm in depth) and the inner side walls defining the recess are tapering from the bottom surface toward the upper surface side.
  • the bottom surface of the recess 12 defined in the package is provided with three sets of a pair of positive and negative lead electrodes 13 which are made of silver-plated copper plate containing iron and respectively extend to outside bending along the corresponding side surface and the lower surface (back surface) of the package 11 .
  • the sealing member 30 can be formed such that the filler particles 40 are substantially uniformly mixed in a liquid epoxy resin, and added in drops in the recess 12 of the package, and then it is cured at a temperature of 140 C. for 4 hours with the upper surface of the base substrate 10 facing upward and the surface of the resin being exposed.
  • the light emitting device according to Example 6 has a similar structure as the light emitting device in Example 1 except for the parent material of the sealing member and the filler particles.
  • the sealing member 30 of the light emitting device of Example 6 is made of a dimethyl silicone resin (specific gravity of 1.02) of condensation polymerization type which contains 10 parts of the filler particles 40 of hollow spherical silica having an average particle size of 1.8 ⁇ m, a specific gravity of 0.32.
  • the filler particles 40 are unevenly distributed in the surface side of the sealing member 30 .
  • the surface 35 of the sealing member has an irregular geometry formed by the resin covering the filler particles 40 approximately in conformity with the shapes of the filler particles, and has practically no gloss.
  • the surface gloss of the sealing member sealing a light emitting element can be reduced by using the filler particles efficiently.
  • the light emitting device can be used for display apparatuses for applications such as advertisements, destination signs, road information, or the like, traffic signals, small to large displays and the like.

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Led Device Packages (AREA)
US13/337,154 2010-12-28 2011-12-26 Light emitting device with sealing member containing filler particles Active US9231175B2 (en)

Applications Claiming Priority (2)

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JP2010292204 2010-12-28
JP2010-292204 2010-12-28

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US (1) US9231175B2 (ko)
EP (2) EP3716331B1 (ko)
JP (4) JP5953736B2 (ko)
KR (3) KR102087250B1 (ko)
CN (1) CN102544331B (ko)
TW (1) TWI556475B (ko)

Cited By (3)

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US11038090B2 (en) 2017-08-01 2021-06-15 Osram Oled Gmbh Method of producing an optoelectronic component
US11211524B2 (en) 2017-08-01 2021-12-28 Osram Oled Gmbh Method of producing an optoelectronic component
WO2023104529A1 (de) * 2021-12-09 2023-06-15 Ams-Osram International Gmbh Optoelektronisches element und verfahren zur herstellung eines optoelektronischen elements

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US10008637B2 (en) 2011-12-06 2018-06-26 Cree, Inc. Light emitter devices and methods with reduced dimensions and improved light output
US10686107B2 (en) 2011-07-21 2020-06-16 Cree, Inc. Light emitter devices and components with improved chemical resistance and related methods
TW201312807A (zh) 2011-07-21 2013-03-16 Cree Inc 光發射器元件封裝與部件及改良化學抵抗性的方法與相關方法
US10211380B2 (en) 2011-07-21 2019-02-19 Cree, Inc. Light emitting devices and components having improved chemical resistance and related methods
JP2013062393A (ja) * 2011-09-14 2013-04-04 Sharp Corp 発光装置
US9496466B2 (en) 2011-12-06 2016-11-15 Cree, Inc. Light emitter devices and methods, utilizing light emitting diodes (LEDs), for improved light extraction
WO2013102302A1 (en) * 2012-01-05 2013-07-11 Cree Huizhou Solid State Lighting Company Limited Led device with reduced reflection and display including the same
US9240530B2 (en) 2012-02-13 2016-01-19 Cree, Inc. Light emitter devices having improved chemical and physical resistance and related methods
US8946747B2 (en) * 2012-02-13 2015-02-03 Cree, Inc. Lighting device including multiple encapsulant material layers
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