US8575611B2 - Light-emitting display device and manufacturing method for light-emitting display device - Google Patents

Light-emitting display device and manufacturing method for light-emitting display device Download PDF

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US8575611B2
US8575611B2 US13/370,842 US201213370842A US8575611B2 US 8575611 B2 US8575611 B2 US 8575611B2 US 201213370842 A US201213370842 A US 201213370842A US 8575611 B2 US8575611 B2 US 8575611B2
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thin film
semiconductor layer
light
region
film transistor
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Yasuo Segawa
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Jdi Design And Development GK
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Panasonic Corp
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/1222—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or crystalline structure of the active layer
    • H01L27/1233—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or crystalline structure of the active layer with different thicknesses of the active layer in different devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/1259—Multistep manufacturing methods
    • H01L27/1288—Multistep manufacturing methods employing particular masking sequences or specially adapted masks, e.g. half-tone mask
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/121—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements
    • H10K59/1213—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements the pixel elements being TFTs

Definitions

  • the present invention relates to light-emitting display devices which display images and manufacturing methods for the light-emitting display devices, and particularly to a light-emitting display device including thin film transistors for driving an organic EL display and organic EL elements and a manufacturing method for the light-emitting display device.
  • organic EL display devices using electro luminescence (EL) of organic material has been attracting attention as one of the next-generation flat panel displays replacing the liquid crystal displays.
  • the organic EL display devices are current-driven devices, and are divided into the active-matrix type and the passive-matrix type.
  • an image is displayed by current flowing in an organic EL element provided in each pixel, causing the organic EL element to emit light.
  • the amount of current flowing in the organic EL element is controlled by a thin film transistor (TFT).
  • an amorphous silicon film As a channel layer of such a TFT, an amorphous silicon film has been used, for example.
  • an amorphous silicon film has been used, for example.
  • the TFTs are used as a driving transistor for supplying driving current to the organic EL element, and a switching transistor for supplying data signals according to the intensity of the driving current to a gate electrode of a current driving transistor.
  • a significantly low off-current is required for the switching transistor, and a current (mobility) for driving the organic EL element, that is, on-current is required for the driving transistor.
  • forming micro crystals in the channel layer portion of the TFT so as to increase the driving current (mobility) of the TFT increases the off-current of the TFT.
  • the off-current is low due to a large bandgap in the amorphous silicon film and the on-current is also low due to low mobility.
  • the on-current is large due to high mobility, and off-current is also high due to the presence of grain boundary and defect in the crystalline silicon film.
  • the channel layer has a two-layer structure including a channel layer made of a crystalline silicon film and a channel layer made of an amorphous silicon film.
  • the two-layer structure of the channel layer including the channel layer made of the crystalline silicon film and the channel layer made of the amorphous silicon film ideally allows achieving a characteristic having a higher on-current compared to the channel layer made of single-layer amorphous silicon film, and a lower off-current compared to the channel layer made of single-layer crystalline silicon film, due to mutual advantages.
  • the driving current (mobility) of the TFT is increased using the crystalline silicon film as one of the two layers (lower layer) in the channel layer in the TFT
  • the off-current of TFT increases.
  • it is necessary to increase the thickness of the amorphous silicon film in another layer (upper layer) in order to suppress the off-current there is a problem that the mobility of the TFT in appearance is reduced, reducing the driving capacity.
  • the present invention has been conceived in view of the problems described above, and it is an object of the present invention to provide a light-emitting display device capable of suppressing the off-current in the switching transistor and securing the on-current in the driving transistor, and the manufacturing method for the light-emitting display device.
  • the side-contact structure is adopted in order to secure the TFT characteristics (on-current) in the linear region.
  • the thickness of the semiconductor layer (channel layer) in a region corresponding to the source/drain electrode is increased in order to suppress off-current.
  • the thickness of the semiconductor layer (channel layer) in a region corresponding to the source/drain electrode is reduced in order to secure on-current.
  • a light-emitting display device and the manufacturing method thereof capable of suppressing off-current in the switching transistor, and securing on-current in the driving transistor can be implemented.
  • effects of reducing off-current and securing on-current of TFT composing the switching transistor while securing the on-current of TFT composing the driving transistor with the same number of process as the conventional technology can be implemented.
  • FIG. 1A is a cross-sectional view schematically illustrating a configuration of Sw Tr included in a light-emitting display device according to an embodiment
  • FIG. 1B is a cross-sectional view schematically illustrating a configuration of Dr Tr included in the light-emitting display device according to the embodiment
  • FIG. 2 is a diagram illustrating an equivalent circuit of the light-emitting display device according to the embodiment
  • FIG. 3 is a flowchart illustrating the manufacturing process of the light-emitting display device according to the embodiment
  • FIG. 4A is a diagram for illustrating the manufacturing method for the light-emitting display device according to the embodiment.
  • FIG. 4B is a diagram for illustrating the manufacturing method for the light-emitting display device according to the embodiment.
  • FIG. 4C is a diagram for illustrating the manufacturing method for the light-emitting display device according to the embodiment.
  • FIG. 4D is a diagram for illustrating the manufacturing method for the light-emitting display device according to the embodiment.
  • FIG. 4E is a diagram for illustrating the manufacturing method for the light-emitting display device according to the embodiment.
  • FIG. 4F is a diagram for illustrating the manufacturing method for the light-emitting display device according to the embodiment.
  • FIG. 4G is a diagram for illustrating the manufacturing method for the light-emitting display device according to the embodiment.
  • FIG. 4H is a diagram for illustrating the manufacturing method for the light-emitting display device according to the embodiment.
  • FIG. 4I is a diagram for illustrating the manufacturing method for the light-emitting display device according to the embodiment.
  • FIG. 4J is a diagram for illustrating the manufacturing method for the light-emitting display device according to the embodiment.
  • FIG. 5A is a diagram for illustrating a process for adjusting the thickness of the amorphous silicon film 15 in a switching transistor 1 region;
  • FIG. 5B is a diagram for illustrating the process for adjusting the thickness of the amorphous silicon film 15 in a driving transistor region 2 ;
  • FIG. 6A is a diagram for illustrating a process for adjusting the thickness of the amorphous silicon film 15 in a switching transistor region 1 ;
  • FIG. 6B is a diagram for illustrating the process for adjusting the thickness of the amorphous silicon film 15 in a driving transistor region 2 ;
  • FIG. 7 is a graph illustrating TFT characteristics of a general TFT
  • FIG. 8 is a graph illustrating TFT characteristics of a general TFT
  • FIG. 9A illustrates a TFT with side contacts
  • FIG. 9B illustrates characteristics in the TFT in FIG. 9A ;
  • FIG. 10A illustrates a TFT structure without side contacts
  • FIG. 10B illustrates TFT characteristics in the TFT structure illustrated in FIG. 10A ;
  • FIG. 11 is a diagram illustrating characteristics in varied thicknesses of the amorphous silicon film in the TFT illustrated in FIG. 10A ;
  • FIG. 12 is a diagram illustrating characteristics in varied thicknesses of the amorphous silicon film in the TFT illustrated in FIG. 10A .
  • the light-emitting display device is a light-emitting display device comprising: an array of a plurality of light-emitting pixels; in which each of the light-emitting pixels includes a first thin film transistor, a second thin film transistor, and a light-emitting element, each of the first thin film transistor and the second thin film transistor includes: a gate electrode provided on the substrate; a gate insulating film provided on the gate electrode; a semiconductor layer provided on the gate insulating film corresponding to the gate electrode, and having a source region, a channel region, and a drain region; a doped semiconductor layer provided to cover upper surfaces of the source region and the drain region of the semiconductor layer; and source/drain electrodes provided on the doped semiconductor layer, a thickness of the source region and the drain region of the semiconductor layer in the first thin film transistor is greater than a thickness of the source region and the drain region of the semiconductor layer in the second thin film transistor.
  • a TFT which requires reduced off-current for example, switching transistor
  • a TFT which requires a current value equal to or higher than a predetermined value in the saturation region (for example, the driving transistor) with a simple structure on the same substrate using the same stacked structure and by merely changing the thickness of the side contacts of the semiconductor layer.
  • the doped semiconductor layer covers side surfaces of channel-lengthwise ends of the semiconductor layer.
  • the light-emitting display device further includes a plurality of data lines; and a power line for supplying current to the light-emitting pixels, which are arranged on a substrate, data voltage is applied to the gate electrode of the second thin film transistor from a corresponding one of the data lines, and current according to the applied voltage is supplied to the light-emitting element from the power line through the second thin film transistor.
  • the light-emitting display device further includes a plurality of scanning lines on the substrate, in which the gate electrode of the first thin film transistor is connected to a corresponding one of the scanning lines, and a scanning signal is supplied to the gate electrode through the corresponding scanning line, and one of the source/drain electrodes of the first thin film transistor is connected to the gate electrode of the second thin film transistor, and data voltage is applied from the corresponding data line through the first thin film transistor to which the scanning signal is supplied.
  • the semiconductor layer includes: a first semiconductor layer provided on the gate insulating film; and a second semiconductor layer provided on the first semiconductor layer, the first semiconductor layer is made of crystalline semiconductor, and the second semiconductor layer is made of amorphous semiconductor.
  • the thickness of the source region and the drain region of the first semiconductor layer in the first thin film transistor is identical to the thickness of the source region and the drain region of the first semiconductor layer in the second thin film transistor, and the thickness of the source region and the drain region of the second semiconductor layer in the first thin film transistor is greater than the thickness of the source region and the drain region of the second semiconductor layer in the second thin film transistor.
  • a thickness of the channel region of the semiconductor layer in the second thin film transistor is identical to the thickness of the semiconductor layer in the first thin film transistor, the channel region being a region other than the source region and the drain region of the semiconductor layer in the second thin film transistor.
  • the thickness of the channel region which is other than the source region and the drain region is greater than the thickness of the source region and the drain region.
  • the thickness of the ends of the semiconductor layer in the source region and the drain region on the channel region side is relatively large.
  • the field formed at the ends is reduced, preventing the breakdown due to electric field concentration.
  • the semiconductor layer in the second thin film transistor is formed such that the thickness of the source region and the drain region and the thickness of the channel region change discontinuously.
  • a thickness of the source region and the drain region of the semiconductor layer in the second thin film transistor is adjusted at the time of forming, by etching using a multi-tone mask.
  • the light-emitting element is an organic electroluminescent element.
  • the manufacturing method for a light-emitting display device is a manufacturing method for a light-emitting display device including: an array of a plurality of light-emitting pixels; a plurality of data lines; and a power line for supplying current to the light-emitting pixels, which are arranged on a substrate, and each of the light-emitting pixels including a first thin film transistor, a second thin film transistor, and a light-emitting element, said manufacturing method including: forming, on the substrate, gate electrodes of the first and second thin film transistors; forming, on the gate electrodes, gate insulating films of the first and second thin film transistors; forming, on the gate insulating films, semiconductor layers of the first and second thin film transistors such that a thickness of a source region and a drain region of a semiconductor layer in the second thin film transistor is smaller than a thickness of a source region and a drain region of a semiconductor layer in the first thin film transistor; forming, on the semiconductor
  • the thickness of the semiconductor layer in the second thin film transistor is adjusted at the time of forming, by etching using a multi-tone mask.
  • FIG. 1A is a cross-sectional view schematically illustrating the configuration of Sw Tr included in the light-emitting display device according to the embodiment 1.
  • FIG. 1B is a cross-sectional view schematically illustrating the configuration of Dr Tr included in the light-emitting display device according to the embodiment 1.
  • the switching transistor 1 corresponds to the first thin film transistor according to the present invention.
  • the switching transistor 1 is an inversely-staggered TFT, and includes an insulating substrate 10 (not illustrated), a gate electrode 11 a , a gate insulating film 12 a , a semiconductor layer including a crystalline silicon film 14 a and an amorphous silicon film 15 a , an n+ silicon film 17 a , and source/drain electrodes 19 a.
  • the insulating substrate 10 is a substrate made of clear glass or quartz.
  • the gate electrode 11 a is provided on the insulating substrate 10 , and is made of metal such as molybdenum (Mo) or Mo alloy, metal such as titanium (Ti), aluminum (Al), or Al alloy, metal such as copper (Cu) or Cu alloy, or a metal such as silver (Ag), chromium (Cr), tantalum (Ta), or tungsten (W).
  • Mo molybdenum
  • Mo alloy metal such as titanium (Ti), aluminum (Al), or Al alloy
  • metal such as copper (Cu) or Cu alloy
  • a metal such as silver (Ag), chromium (Cr), tantalum (Ta), or tungsten (W).
  • the gate insulating film 12 a is provided on the gate electrode 11 a . More specifically, the gate insulating film 12 a is formed to cover the gate electrode 11 a , and is made of silicon oxide (SiO x ), silicon nitride (SiN x ), or a stacked structure of silicon oxide (SiO x ) and silicon nitride (SiN x ). In addition, the gate insulating film 12 a is formed to have a thickness approximately between 75 nm and 500 nm, for example.
  • the semiconductor layer is provided on the gate insulating film 12 a , and includes a crystalline silicon film 14 a which is a crystalline semiconductor and an amorphous silicon film 15 a which is an amorphous semiconductor.
  • this semiconductor layer includes a source region and a drain region in regions corresponding to the source/drain electrodes 19 a , and a channel region in a region other than the source region and the drain region, and serves as a channel layer.
  • the semiconductor layer (channel layer) includes the amorphous silicon film 15 a stacked on the crystalline silicon film 14 a having the source region, the channel region, and the drain region provided, corresponding to the gate electrode 11 a on the gate insulating film 12 a .
  • the thickness of the channel layer (semiconductor layer) of the switching transistor 1 in the source region and the drain region is greater than the thickness of the channel layer (semiconductor layer) of the driving transistor 2 in the source region and the drain region.
  • the crystalline silicon film 14 a corresponds to the first semiconductor layer according to the present invention, and is formed on the gate insulating film 12 a .
  • the crystalline silicon film 14 a is a polycrystalline silicon film formed on the gate insulating film 12 a , and has a thickness of 30 nm, for example.
  • the crystalline silicon film 14 a is formed by forming the amorphous silicon film 13 (not illustrated) on the gate insulating film 12 a , and changing the formed amorphous silicon film 13 into a polycrystalline film (including fine-crystallization) by laser.
  • polycrystalline here is used in a broader sense, including not only the poly-crystals in a narrow sense including crystals of 50 nm or larger, but also the fine crystals in a narrow sense including crystals of 50 nm or smaller.
  • polycrystalline in the following description is used in the broader sense.
  • the amorphous silicon film 15 a corresponds to the second semiconductor layer according to the present invention, and is an amorphous silicon film, for example, formed on the crystalline silicon film 14 a .
  • the thickness of the amorphous silicon film 15 a is, for example, 75 nm.
  • the n+ silicon film 17 a is a doped semiconductor layer provided to cover the upper surface of the source region and the drain region of the semiconductor layer (amorphous silicon film 15 a and the gate insulating film 12 a ), and serves as the contact layer. More specifically, the n+ silicon film 17 a is formed to cover the amorphous silicon film 15 a and the gate insulating film 12 a.
  • the n+ silicon film 17 a is provided to cover the side surfaces of the crystalline silicon film 14 a and the amorphous silicon film 15 a .
  • the n+ silicon film 17 a is provided to cover the side surfaces on both sides opposite to the channel length direction of the channel layer (the semiconductor layer, that is, the crystalline silicon film 14 a and the amorphous silicon film 15 a ).
  • the n+ silicon film 17 a functions as a side contact electrically conducting the source/drain electrode 19 a and the channel layer.
  • the thickness of the n+ silicon film 17 a is, for example, 25 nm.
  • the source/drain electrode 19 a is provided on the n+ silicon film 17 a .
  • the source/drain electrode 19 a is made of, for example, metal such as molybdenum (Mo) or Mo alloy, metal such as titanium (Ti), aluminum (Al), or Al alloy, metal such as copper (Cu) or Cu alloy, or a metal such as silver (Ag), chromium (Cr), tantalum (Ta), or tungsten (W).
  • the switching transistor 1 is configured as described above.
  • the driving transistor 2 corresponds to the second thin film transistor according to the present invention.
  • the driving transistor 2 is an inversely-staggered TFT, and includes an insulating substrate 10 (not illustrated), a gate electrode 11 b , a gate insulating film 12 b , a semiconductor layer including a crystalline silicon film 14 b and an amorphous silicon film 15 b , an n+ silicon film 17 b , and source/drain electrodes 19 b.
  • the insulating substrate 10 is a substrate made of clear glass or quartz.
  • the gate electrode 11 b is provided on the insulating substrate 10 , and is made of a metal same as the metal of the gate electrode 11 a .
  • the gate electrode 11 b is made of, for example, metal such as molybdenum (Mo) or Mo alloy, metal such as titanium (Ti), aluminum (Al), or Al alloy, metal such as copper (Cu) or Cu alloy, or a metal such as silver (Ag), chromium (Cr), tantalum (Ta), or tungsten (W).
  • the gate insulating film 12 b is provided on the gate electrode 11 b . More specifically, the gate insulating film 12 b is made of the same material as the gate insulating film 12 a , and is formed to cover the gate electrode 11 b . More specifically, the gate insulating film 12 b is made of the same material as the gate insulating film; that is, made of silicon oxide (SiO x ), silicon nitride (SiN x ), or a stacked structure of silicon oxide (SiO x ) and silicon nitride (SiN x ). In addition, the gate insulating film 12 b is formed to have a thickness approximately between 75 nm and 500 nm, for example.
  • the semiconductor layer is provided on the gate insulating film 12 b , and includes the crystalline silicon film 14 b and the amorphous silicon film 15 b .
  • this semiconductor layer includes a source region and a drain region in regions corresponding to the source/drain electrodes 19 a , and a channel region in a region other than the source region and the drain region, and serves as a channel layer.
  • the semiconductor layer (channel layer) is formed corresponding to the gate electrode 11 b on the gate insulating film 12 b , and the amorphous silicon film 15 b is stacked on the crystalline silicon film 14 b having the source region, the channel region, and the drain region.
  • the thickness of the semiconductor layer (channel layer) of the driving transistor 2 in the source region and the drain region is thinner (smaller) than the thickness of the semiconductor layer (channel layer) of the switching transistor 1 .
  • the thickness of the semiconductor layer (channel layer) in the channel region (central part) is relatively greater than the thickness of the semiconductor layer (channel layer) in the source region and the drain region.
  • the electric field formed at the semiconductor layer (channel layer) is reduced, preventing the breakdown due to electric field concentration. In other words, the off-current can be suppressed.
  • the crystalline silicon film 14 b is formed on the gate insulating film 12 b .
  • the crystalline silicon film 14 b is a polycrystalline silicon film formed on the gate insulating film 12 b , and has a thickness of 30 nm, for example.
  • the crystalline silicon film 14 b is formed by forming the amorphous silicon film 13 (not illustrated), and changing the formed amorphous silicon film 13 into a polycrystalline film (including micro-crystallization) by laser.
  • the amorphous silicon film 15 b is an amorphous silicon film, for example, formed on the crystalline silicon film 14 b .
  • the thickness of the amorphous silicon film 15 b is 30 nm in the source region and the drain region, for example, and is 75 nm in the channel region, for example.
  • the thickness of the source region and the drain region of the semiconductor layer (here, the amorphous silicon film 15 b ) in the driving transistor 2 changes discontinuously from the channel region side (central part of the semiconductor layer) to the opposite side of the channel region (peripheral part of the semiconductor layer).
  • the semiconductor layer in the driving transistor 2 is formed such that the thickness of the source region and the drain region and the thickness of the channel region change discontinuously.
  • the thickness of the amorphous silicon film 15 b in the region corresponding to the source/drain electrode 19 b is formed to be thinner than the region corresponding to the source/drain electrode 19 a in the amorphous silicon film 15 a in the switching transistor 1 , and the thickness of the amorphous silicon film 15 b is identical to the amorphous silicon film 15 a in a region corresponding to the gate region 11 b (channel region) in the amorphous silicon film 15 a in the switching transistor 1 .
  • the n+ silicon film 17 b is a doped semiconductor layer provided to cover the upper surfaces of the source region and the drain region of the semiconductor layer (amorphous silicon film 15 b and the gate insulating film 12 b ), and serves as the contact layer. More specifically, the n+ silicon film 17 b is formed to cover the amorphous silicon film 15 b and the gate insulating film 12 b.
  • the n+ silicon film 17 b is provided to cover the side surfaces of the crystalline silicon film 14 b and the amorphous silicon film 15 b .
  • the n+ silicon film 17 b is provided to cover the side surfaces on channel lengthwise ends of the channel layer (the semiconductor layer, that is, the crystalline silicon film 14 b and the amorphous silicon film 15 b ).
  • the n+ silicon film 17 b functions as a side contact electrically conducting the source/drain electrode 19 b and the channel layer.
  • the thickness of the n+ silicon film 17 b is, for example, 25 nm.
  • the source/drain electrode 19 b is provided on the n+ silicon film 17 b , and is made of the same material as the source/drain electrode 19 a .
  • the source/drain electrode 19 b is made of, for example, metal such as molybdenum (Mo) or Mo alloy, metal such as titanium (Ti), aluminum (Al), or Al alloy, metal such as copper (Cu) or Cu alloy, or a metal such as silver (Ag), chromium (Cr), tantalum (Ta), or tungsten (W).
  • the driving transistor 2 is configured as described above.
  • FIG. 2 is a diagram illustrating an equivalent circuit of the light-emitting display device according to the embodiment.
  • the light-emitting display device illustrated in FIG. 2 includes light-emitting pixels arranged on an insulating substrate 10 , and displays images based on the video signal which is luminance signals input to the light-emitting display device from outside.
  • Each of the light-emitting pixels includes a switching transistor 1 , a driving transistor 2 , a data line 3 , a scanning line 4 , a high-voltage power line 8 , a low-voltage power line 9 , a capacitor 6 , and an organic EL element 7 .
  • the switching transistor 1 has one of source/drain electrodes 19 a connected to the data line 3 , and the other of source/drain electrodes 19 a is connected to the capacitor 6 , and the gate electrode 11 a is connected to the scanning line 4 .
  • the switching transistor 1 switches a connection between the data line 3 and the capacitance 6 between conduction and non-conduction, when a scanning signal is supplied through the scanning line 4 .
  • the driving transistor 2 has a gate electrode 11 b connected to one of the source/drain electrodes 19 a of the switching transistor 1 , and is connected to the data line 3 via the switching transistor 1 . Furthermore, the driving transistor 2 has one of the source/drain electrodes 19 b (source electrode) connected to an anode of the organic EL element 7 , and the other of the source/drain electrode 19 b (drain electrode) connected to the high-voltage power line 8 .
  • a data voltage is applied from the data line 3 to the gate electrode 11 b of the driving transistor 2 through the switching transistor 1 , and a current according to the applied data voltage flows in the organic EL element 7 , causing the organic EL element 7 to emit light.
  • the high-voltage power line 8 is a power line for supplying a large current to the driving transistor 2 and the organic EL element 7 .
  • the voltage supplied to the high-voltage power line is Vdd, and is, for example, 20 V.
  • the data line 3 is a line for transmitting a data voltage which determines the brightness of the pixel in the organic EL element 7 (the value of voltage) to each of the light-emitting pixels.
  • the scanning line 4 is a line used for transmitting the scanning signal which determines switching of the switching transistor 1 (ON/OFF) to each of the light-emitting pixels.
  • the capacitor 6 holds the voltage value (electric charges) for a given period of time.
  • the organic EL element 7 corresponds to the light-emitting element in the present invention, and emits light when receiving the driving current from the driving transistor 2 . More specifically, the organic EL element 7 emits light when receiving a supply of current (driving current) from the high-voltage power line 8 through the driving transistor 2 .
  • the organic EL element 7 has a cathode connected to the low-voltage power line 9 , and an anode connected to the source electrode of the driving transistor 2 .
  • the voltage supplied to the low-voltage power line 9 is Vss, and is 0 V, for example.
  • FIG. 3 is a flowchart illustrating the manufacturing process of the light-emitting display device according to the embodiment of the present invention.
  • FIGS. 4A to 4J are diagrams for illustrating the manufacturing method for the light-emitting display device according to the embodiment of the present invention.
  • the gate electrodes of the switching transistor 1 and the driving transistor 2 are formed on the insulating substrate 10 (S 1 ).
  • a MoW metal film 11 is deposited by the sputtering method on the insulating substrate 10 , for example, and a gate electrode 11 a in the switching transistor region 1 , the gate electrode 11 b in the driving transistor 2 region, the electrode 11 c in the capacitor 6 , and the metal 11 d in the line part are formed by photolithography and etching ( FIG. 4A ).
  • the metal 11 d in the line part includes lines such as the data line 3 , the scanning line 4 , the high-voltage power line 8 , and the low-voltage power line 9 .
  • the region in which the switching transistor 1 is formed after the manufacturing process is referred to as the switching transistor 1 region
  • the region in which the driving transistor 2 is formed after the manufacturing process is referred to as the driving transistor 2 region.
  • the gate insulating film 12 for the switching transistor 1 and the driving transistor 2 are formed on the gate electrodes (S 2 ).
  • the semiconductor layers for the switching transistor 1 and the driving transistor 2 are formed on the gate insulating films 12 .
  • the semiconductor layers have different thicknesses, and the thickness of the semiconductor layer in the switching transistor 1 in the source region and the drain region is greater than the thickness of the semiconductor layer in the driving transistor 2 in the source region and the drain region (S 3 ).
  • the gate insulating film 12 is formed on the gate electrode 11 a , the gate electrode 11 b , the electrode 11 c and the metal 11 d , that is, covering the insulating substrate 10 , the gate electrode 11 a , the gate electrode 11 b , and the electrode 11 c , and the metal 11 d , and the amorphous silicon film 13 is continuously formed on the formed gate insulating film 12 ( FIG. 4B ).
  • the gate insulating film 12 is, for example has a stacked structure of silicon oxide (SiO 2 ) and silicon nitride (SiN x ).
  • the gate insulating film 12 is formed to have a thickness approximately between 75 to 500 nm, and the amorphous silicon film 13 is formed to have a thickness of 30 nm, for example.
  • the amorphous silicon film 13 is changed to the crystalline silicon film 14 by the laser annealing. More specifically, the formed amorphous silicon film 13 is dehydrated, and subsequently changing the amorphous silicon film 13 into poly-crystals (including micro crystals) by laser to form the crystalline silicon film 14 ( FIG. 4C ).
  • the amorphous silicon film 15 is formed on the formed crystalline silicon film 14 , and the thickness of the channel layer region (semiconductor region) is adjusted by etching using a high-tone mask.
  • the amorphous silicon film 15 is formed on the crystalline silicon film 14 , and a photoresist 16 is applied on the formed amorphous silicon film 15 .
  • the amorphous silicon film 15 is formed to have a thickness of approximately 75 nm, for example.
  • the SC mask for example, the high-tone mask such as the half-tone mask
  • the applied photoresist is exposed ( FIG. 4D ), and etching is performed on the crystalline silicon film 14 and the amorphous silicon film 15 .
  • dry etching is used as the etching.
  • gas for etching for example, gas including fluorine (F), chlorine (Cl), or a mixed gas of F and Cl is used.
  • the SC mask is a mask for simultaneously patterning the crystalline silicon film 14 and the amorphous silicon film 15 , and a high-tone mask such as the half-tone mask is used here.
  • FIGS. 5A , 5 B, 6 A, and 6 B are diagrams for illustrating the process for forming the semiconductor layer with different thicknesses on the gate insulating film 12 in detail.
  • FIGS. 5A and 6A are diagrams for illustrating the process for adjusting the thickness of the amorphous silicon film 15 in the switching transistor 1 region
  • FIGS. 5B and 6B are diagrams for illustrating the process for adjusting the thickness of the amorphous silicon film 15 in the driving transistor 2 region.
  • the applied photoresist is exposed by the high-tone mask, leaving the photoresist 16 a covering the entire channel layer region for the approximately same thickness.
  • the applied photoresist is exposed by the high-tone mask, leaving the photoresist 16 b serving as the half-tone mask. More specifically, the remaining photoresist 16 b has the same thickness as the photoresist 16 a in the region inside the channel layer region, and thinner than the photoresist 16 a in a region outside of the channel layer, and serves as the half-tone mask.
  • the crystalline silicon film 14 a and the amorphous silicon film 15 a in the channel layer region remain with the thickness at the time of forming. More specifically, in the switching transistor 1 region, the thickness of the crystalline silicon film 14 a remains as 30 nm, and the thickness of the amorphous silicon film 15 a remains as 75 nm.
  • the photoresist 16 b serves as a half-tone mask for etching amorphous silicon film 15 b such that the thickness of the amorphous silicon film 15 b in the region inside of the channel layer region and the thickness of the amorphous silicon film 15 b in the region outside of the channel layer region are different from each other. More specifically, as illustrated in FIG. 6B , although the crystalline silicon film 14 b remains with the thickness at the time of forming, the thickness of the amorphous silicon film 15 b is different in the region outside of the channel layer region and inside the channel layer region.
  • the thickness of the crystalline silicon film 14 b is 30 nm, which is the same as the thickness of the amorphous silicon film 14 a in the switching transistor 1 region.
  • the thickness of the amorphous silicon film 15 b is 30 nm in the region outside of the channel layer region, and is 75 nm inside the channel layer region, which is the same as the thickness of the amorphous silicon film 15 a in the switching transistor 1 region.
  • the channel layer region is formed such that the thicknesses of the channel layer region in the switching transistor 1 region (more specifically, the amorphous silicon film 15 a ) and the thickness of the channel layer region in the driving transistor 2 region (more specifically, the amorphous silicon film 15 b ) are different.
  • the doped semiconductor layers that is, the contact layers of the switching transistor 1 and the driving transistor 2 are formed on the semiconductor layer (S 4 ).
  • a doped semiconductor layer that is, an n+ silicon film 17 is formed by forming the amorphous silicon film with the plasma CVD, and by doping an element of group V such as phosphorus (P).
  • the n+ silicon film 17 is formed with the thickness of 25 nm, for example, and serves as a contact layer.
  • the photoresist 18 is applied to the formed n+ silicon film 17 (contact layer) and the contact layer is exposed. After the exposure, the photoresist 18 in the region to be etched is detached (ashing) ( FIG. 4F ). Subsequently, etching is performed on the n+ silicon film 17 (contact layer) and the gate insulating film 12 to be etched ( FIG. 4G ). Here, dry etching is used as the etching. When performing the dry etching on the n+ silicon film 17 (contact layer), a mixed gas of the sulfur hexafluoride (SF 6 ) and chlorine (Cl) is used, for example.
  • SF 6 sulfur hexafluoride
  • Cl chlorine
  • the mixed gas of carbon trifluoride (CF 3 ) and oxygen (O) is used when the gate insulating film 12 is made of SiO 2 , and a mixed gas of sulfur hexafluoride (SF 6 ), oxygen (O), and helium (He) is used when the gate insulating film 12 is made of SiN.
  • SF 6 sulfur hexafluoride
  • He helium
  • the source/drain electrodes of the switching transistor 1 and the driving transistor 2 are formed on the doped semiconductor layer (S 5 ).
  • the metal 19 is deposited by sputtering on the formed n+ silicon film 17 (more specifically, on the n+ silicon film 17 and the etched and exposed gate electrode 11 b , the electrode 11 c , and the metal 11 d ).
  • the deposited metal 19 is, for example, MoW/Al-0.5 wt % Cu/MoW:80 nm/300 nm/20 nm.
  • the photoresist 20 is applied and exposure is performed on the deposited metal 19 , and the photoresist on the region to be etched is detached (ashing) ( FIG. 4H ).
  • etching is performed on the metal 19 in the region to be etched ( FIG. 4I ).
  • wet etching is used for the etching, and mixed acid such as aqua regia is used as the etching solution.
  • dry etching on the n+ silicon film 17 in the region to be etched (contact layer), part of the amorphous silicon film 15 a in the switching transistor 1 region, and part of the amorphous silicon film 15 b in the driving transistor 2 region is performed.
  • the dry etching gas the mixed gas of sulfur hexafluoride (SF 6 ) and chlorine (Cl) is used, in the same manner as the description above.
  • the switching transistor 1 , the driving transistor 2 , the capacitance 6 and the line part can be easily formed at the same time.
  • the thickness of the source region and the drain region of the semiconductor layer in the driving transistor 2 can be adjusted by the etching using the multi-tone mask (half-tone mask).
  • the switching transistor 1 and the driving transistor 2 having semiconductor layers with different thicknesses can be formed.
  • FIGS. 7 and 8 are graphs illustrating the TFT characteristics of the general thin film transistor. More specifically, FIG. 7 illustrates the behavior of the drain current Id in relation to the drain current Id and the gate voltage Vg, that is, at a predetermined source-drain voltage (Vds) and varying gate voltages Vg. Note that, in FIG. 7 , the vertical axis is the drain current Id, and the horizontal axis is the gate voltage Vg (V). On the other hand, FIG.
  • the drain current Id indicates the behavior of the drain current Id in relation to the drain current Id and the drain voltage Vd, that is, at a predetermined gate voltage Vg and varying drain voltage Vd.
  • the vertical axis indicates the drain current Id (A)
  • the horizontal axis indicates the drain voltage Vd (V).
  • the switching transistor 1 is basically used in the linear region illustrated in FIGS. 7 and 8 (the region indicated in dotted lines in the diagrams).
  • the linear region is a region in which the value of the gate voltage Vg from the threshold voltage Vth (Vg ⁇ Vth) exceeds the source-drain voltage (Vds).
  • the drain voltage Vd is in proportion to the applied gate voltage Vg, and where Vg ⁇ Vth>Vds.
  • the switching transistor 1 it is necessary for the switching transistor 1 to have an off-current in the off region as low as possible, for example, 1 pA or less in order to hold the electric charge written on the capacitor 6 as illustrated in FIG. 2 .
  • the driving transistor 2 is basically used in the saturation region (the region illustrated in lines in the diagrams) illustrated in FIGS. 7 and 8 .
  • the saturation region is a region in which the source-drain voltage (Vds) is greater than the value of the gate voltage Vg from the threshold voltage Vth (Vg ⁇ Vth).
  • the driving transistor 2 is used for supplying current to the organic EL element 7 .
  • the driving transistor 2 has to supply the amount of current in a current range (0.5 nA to 5 ⁇ A) corresponding to the current-luminance characteristic of the organic EL element 7 , although there is no requirement for the off-current as for the switching transistor 1 . More specifically, it is necessary for the driving transistor 2 to secure the on-current in the current range in the saturation region.
  • FIG. 9A is a diagram illustrating a TFT with side contacts.
  • FIG. 9B is a diagram illustrating characteristics of TFT illustrated in FIG. 9A .
  • FIG. 10A illustrates a TFT structure without a side contact.
  • FIG. 10B illustrates TFT characteristics in the TFT structure illustrated in FIG. 10A .
  • the TFT illustrated in FIG. 9A is an inversely staggered TFT, and includes an insulating substrate 110 made of transparent glass or quartz (not illustrated), the gate electrode 111 provided on the insulating substrate 110 , the gate insulating film 112 provided on the gate electrode 111 , the crystalline silicon film 114 formed on the gate insulating film 112 , the amorphous silicon film 115 formed on the crystalline silicon film 114 , an n+ silicon film 117 provided to cover the side surfaces of the crystalline silicon film 114 and the amorphous silicon film 115 , and the source/drain electrodes 119 .
  • FIG. 9A is an inversely staggered TFT, and includes an insulating substrate 110 made of transparent glass or quartz (not illustrated), the gate electrode 111 provided on the insulating substrate 110 , the gate insulating film 112 provided on the gate electrode 111 , the crystalline silicon film 114 formed on the gate insulating film 112 , the amorphous silicon film 115 formed on the
  • FIG. 9B illustrates the relationship between the drain current Id and the gate voltage Vg, and the vertical axis indicates the drain current Id (A), and the behavior of the drain current Id in different source-drain voltage (Vds) and varying gate voltages Vg is illustrated. Note that, the vertical axis indicates the drain current Id, and the horizontal axis indicates the gate voltage Vg (V).
  • the TFT illustrated in FIG. 10A indicates the configuration without side contact, in which the crystalline silicon film 114 and the n+ silicon film 117 are not in contact with each other. More specifically, compared to the TFT illustrated in FIG. 9A , the length of the crystalline silicon film 114 (channel layer) is short, and the rest of the configuration is identical. Thus, the detailed description shall be omitted.
  • FIG. 10B indicates a relationship between the drain currents Id and the drain voltages Vd, and indicates the behavior of the drain current Id at different gate voltages Vg and varying drain voltages Vd.
  • the vertical axis indicates the drain current Id (A)
  • the horizontal axis indicates the drain voltage Vd (V).
  • FIG. 10B indicates a case in which the length for the crystalline silicon film 114 (channel layer) is varied into three different lengths.
  • the current value in the linear region decreases. Accordingly, in the linear region, the current flows from the crystalline silicon film 114 (channel layer) through the side contact part (the part in which the crystalline silicon film 114 and the n+ silicon film 117 are in contact with each other). In contrast, in the saturation region, the reduction in the current value is not observed. Thus, the current flows in a part which is not the side contact part.
  • the switching transistor 1 is basically used in the linear region.
  • the switching transistor it is preferable for the switching transistor to have the side contact.
  • the switching transistor 1 and the driving transistor 2 according to the embodiment have the side contacts.
  • FIGS. 11 and 12 are diagrams illustrating characteristics in varied thicknesses of the amorphous silicon film in the TFT illustrated in FIG. 10A .
  • FIG. 11 indicates the relationship between the drain current Id and the drain voltage Vds, and the vertical axis indicates the drain current Id (A), and the horizontal axis indicates the drain voltage Vds (V). More specifically, the behavior of the drain current Id at a constant (2V) gate voltage Vg and varying drain voltage Vds when the thicknesses of the amorphous silicon film 115 is 0 nm and 30 nm is illustrated.
  • FIG. 12 indicates the relationship between the drain current Id and the gate voltage Vg, and the vertical axis indicates the drain current Id (A).
  • the increase in the thickness of the amorphous silicon film 115 is disadvantageous to the driving transistor 2 since the on-current decreases, but is advantageous to the switching transistor 1 since the off-current decreases.
  • the switching transistor 1 in the embodiment 1 it is effective to increase the thickness of the amorphous silicon film 115 in the SD (source/drain) region in the amorphous silicon film 15 a in order to reduce the off-current, and to decrease the thickness of the amorphous silicon film 115 in the SD region in the amorphous silicon film 15 a in the driving transistor 2 in order to secure the on-current.
  • the light-emitting display device As described above, according to the light-emitting display device according to the present invention, it is possible to implement the switching transistor 1 and the driving transistor 2 having the semiconductor layers with different thicknesses in the amorphous silicon film in the SD region by using the half tone mask as the SC mask.
  • the light-emitting display device has the side contacts, and thus the on-characteristics in the linear region are secured particularly in the switching transistor 1 .
  • the switching transistor has the side contact structure for securing the on-current in the linear region, and the thickness of the amorphous silicon film 15 a is thick in order to reduce the off-current.
  • the thickness of the amorphous silicon film 15 b is thin in order to secure the on-current in the saturation region.
  • the switching transistor 1 can reduce the off-current while securing the on-current, and the driving transistor 2 can secure a sufficient on-current.
  • the light-emitting display device is effective for securing sufficient on-current for the driving transistor while securing the on-current and reducing the off-current of the switching transistor 1 with the same number of process as conventional techniques.
  • the present invention can be used for the light-emitting display device and the manufacturing method for the light-emitting display device, and particularly for a light-emitting display device such as liquid crystal display devices and organic EL display device and manufacturing methods thereof.

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