US20210095378A1 - Cyanide-free liquid composition for immersion gold plating - Google Patents

Cyanide-free liquid composition for immersion gold plating Download PDF

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Publication number
US20210095378A1
US20210095378A1 US16/473,764 US201616473764A US2021095378A1 US 20210095378 A1 US20210095378 A1 US 20210095378A1 US 201616473764 A US201616473764 A US 201616473764A US 2021095378 A1 US2021095378 A1 US 2021095378A1
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compound
gold
alkali metal
gold plating
plating solution
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US16/473,764
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Inventor
Takahiro TSUDA
Tomoaki Tokuhisa
Takuo Ohwada
Kazutaka Senda
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Kanto Chemical Co Inc
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Kanto Chemical Co Inc
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Assigned to KANTO KAGAKU KABUSHIKI KAISHA reassignment KANTO KAGAKU KABUSHIKI KAISHA ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). Assignors: TOKUHISA, TOMOAKI, TSUDA, TAKAHIRO, SENDA, KAZUTAKA, OHWADA, TAKUO
Publication of US20210095378A1 publication Critical patent/US20210095378A1/en
Abandoned legal-status Critical Current

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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
    • C23C18/31—Coating with metals
    • C23C18/42—Coating with noble metals
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
    • C23C18/31—Coating with metals
    • C23C18/42—Coating with noble metals
    • C23C18/44—Coating with noble metals using reducing agents

Definitions

  • the present invention relates to a gold deposition accelerator for use in formation of a gold plating film on an electronic industrial component such as a printed wiring board, an electroless gold plating solution comprising said gold deposition accelerator, and a plating method and a gold deposition accelerating method using said electroless gold plating solution.
  • a printed board has a metal circuit pattern on and/or within the board.
  • a metal with a low electrical resistance such as copper is used, and further, a barrier metal layer is provided for preventing an oxidation, corrosion of the circuit and/or preventing a migration with gold.
  • a metal used as the barrier metal layer palladium, platinum, silver, cobalt, and an alloy thereof can be used, as well as nickel or a nickel alloy.
  • a technique of forming a palladium layer on a nickel layer in order to prevent a diffusion of nickel due to a thermal treatment.
  • a gold film is, in general, used for preventing corrosion of a circuit and/or is used as a contact, thus a film with a high porosity is not preferable and a surface with few gaps is required.
  • electrolytic gold plating As a gold plating method, electrolytic gold plating, autocatalytic electroless gold plating, substrate-catalytic (surface-catalytic) gold plating, and immersion gold plating and the like are known.
  • Autocatalytic electrolytic gold plating performs gold deposition by a reducing agent of which gold is a catalyst.
  • Substrate-catalytic (surface-catalytic) gold plating performs gold deposition by a reducing agent of which a substrate metal is a catalyst.
  • Immersion gold plating performs gold deposition by an electrical displacement reaction between a substrate metal on a surface to be plated and a gold ion and/or a gold ion complex. These plating methods may also be used in combination of two or more kinds.
  • Patent Literature 1 describes an electroless plating solution containing two types of reducing agents using water-soluble gold salts such as gold sodium sulfite in place of cyanide compounds, and considers using ethylenediamine tetraacetic acid (EDTA), and oxocarboxylic acids such as tartaric acid and the like, which are generally used as complexing agents, as reaction accelerators.
  • EDTA ethylenediamine tetraacetic acid
  • oxocarboxylic acids such as tartaric acid and the like
  • Patent Literature 2 similarly describes an electroless plating solution that uses gold sodium sulfite as a source of gold, and considers using potassium sulfite to improve the gold deposition speed, while the concentration of potassium sulfite is described to be limited to equal to or less than 500 mg/L, since the plating solution becomes unstable and causes self-decomposition when the concentration of potassium sulfite is too large.
  • Patent Literature 3 a compound which releases a halogen ion having a strong action of promoting an anode reaction is considered as a gold deposition accelerator of an electroless gold plating solution.
  • Patent Literature 4 uses a heavy metal such as thallium salt as a gold deposition accelerator.
  • the present invention is to provide a gold deposition accelerator which readily improves the gold deposition speed of an electroless gold plating solution and enables to form a uniform gold film, an electroless gold plating solution containing said gold deposition accelerator, a gold plating method and a gold deposition accelerating method etc., using the same.
  • the present invention relates to the following:
  • a gold deposition accelerator for electroless gold plating comprising one or more alkali metal compound(s), wherein said alkali metal compound is not a compound comprising only sodium as an alkali metal, and said alkali metal compound is not only halide, only potassium sulfite, or only potassium sodium tartrate of an alkali metal.
  • An electroless gold plating solution comprising the gold deposition accelerator according to [1], a water-soluble source of gold and a complexing agent.
  • the electroless gold plating solution according to [2] wherein the concentration of the alkali metal compound is 0.001 to 5 M on an alkali metal ion basis other than sodium.
  • a gold deposition accelerator comprising a rubidium compound and/or cesium compound.
  • An electroless gold plating solution comprising the gold deposition accelerator according to [4], a water-soluble source of gold and a complexing agent.
  • the electroless gold plating solution according to [2], [3] or [5] further comprising a sodium compound.
  • the electroless gold plating solution according to [2], [3], [5] or [6] comprising no cyanide compound.
  • the electroless gold plating solution according to [2], [3], [5], [6] or [7] comprising an acid or a base as a pH regulator.
  • a method of forming a gold plating film comprising a step of applying the electroless gold plating solution according to [2], [3], [5], [6], [7] or [8] on a surface of an electronic industrial component.
  • a method of accelerating gold deposition in electroless gold plating comprising adding one or more alkali metal compound(s) in an electroless gold plating solution, wherein said alkali metal compound is not a compound comprising only sodium as an alkali metal, and said alkali metal compound is not only halide, only potassium sulfite, or only potassium sodium tartrate of an alkali metal.
  • the present invention can readily improve the gold deposition speed of an electroless gold plating solution, thus, it can realize a sufficient gold deposition speed even in an electroless gold plating solution which does not have a cyanide compound as a source of gold and has a slow deposition speed. Also, since the gold deposition speed can be regulated only by regulating the concentration of alkali metal ions other than sodium, a regulation by many ingredients is possible as compared to when gold deposition is accelerated depending only on a complexing agent, thus being able to provide a more stable electroless gold plating solution. Furthermore, since the deposition speed can be improved without increasing the concentration of gold, an inexpensive plating solution can be provided.
  • FIG. 1 is a FIGURE comparing gold deposition speeds when alkali metal ions are changed.
  • the gold deposition accelerator of the present invention comprises an alkali metal compound.
  • the gold deposition accelerating action of the gold deposition accelerator of the present invention is of an alkali metal ion
  • the alkali metal compound comprised in the gold deposition accelerator of the present invention may be anything that dissociates to generate an alkali metal ion.
  • a sodium ion does not accelerate the gold deposition reaction.
  • the alkali metal compound comprised in the gold deposition accelerator of the present invention is not a compound comprising only sodium as an alkali metal, but may comprise sodium as long as an alkali metal other than sodium is present.
  • Such compounds include, for example, potassium sodium tartrate.
  • the alkali metal compound comprised in the gold deposition accelerator of the present invention is preferably one or more selected from the group consisting of a potassium compound, rubidium compound and cesium compound, and more preferably, in terms of deposition accelerativity, a rubidium compound and/or cesium compound. In terms of cost, a potassium compound is also preferable.
  • the alkali metal compound comprised in the gold deposition accelerator of the present invention includes, but not limited to the following compounds.
  • carbonates such as potassium carbonate, rubidium carbonate, cesium carbonate
  • nitrates such as cesium nitrate, rubidium nitrate, cesium nitrate
  • sulfates such as potassium sulfate, rubidium sulfate, cesium sulfate
  • halides are included, and as halides, fluorides such as potassium fluoride, rubidium fluoride, cesium fluoride
  • chlorides such as potassium chloride, rubidium chloride, cesium chloride
  • bromides such as potassium bromide, rubidium bromide, cesium bromide
  • iodides such as potassium iodide, rubidium iodide, cesium iodide are included.
  • These compounds may be used alone or in combination of two or more.
  • a counterion to an alkali metal ion in said compound is not particularly limited.
  • Alkali metal compounds other than compounds having the above-mentioned counterion include, but not limited to, the following compounds.
  • the gold deposition accelerator of the present invention may be an alkali metal compound itself, or may be a composition comprising said compound.
  • the composition may be a mixture consisting of two or more alkali metal compounds.
  • the composition may comprise water, a solvent such as organic solvent, in addition to one or more alkali metal(s).
  • the alkali metal compound comprised in the gold deposition accelerator is not only halide, only potassium sulfite, or only potassium sodium tartrate of an alkali metal.
  • the alkali metal compound comprised in the gold deposition accelerator is not only sulfite.
  • the alkali metal compound comprised in the gold deposition accelerator is not only tartrate.
  • the gold deposition accelerator of the present invention when the gold deposition accelerator comprises only a potassium compound as an alkali metal compound, it comprises a potassium compound other than potassium compounds selected from potassium halide, potassium sulfite, and potassium sodium tartrate.
  • the gold deposition accelerator of the present invention in the plating solution comprising said gold deposition accelerator, can use an alkali metal compound comprising an alkali metal other than sodium by regulating the concentration on an alkali metal ion basis other than sodium to equal to or more than 0.001 M, preferably equal to or more than 0.01 M, more preferably equal to or more than 0.02 M.
  • concentration may be regulated to 0.001 M to 5 M, more preferably 0.01 M to 2 M, particularly preferably 0.02 M to 0.5 M. Since a concentration dependency is also recognized for the gold deposition speed, the desired gold deposition speed can be regulated by regulating the concentration.
  • the gold deposition accelerator of the present invention does not comprise potassium sodium tartrate.
  • the gold deposition accelerator of the present invention comprises potassium sodium tartrate or tartrate
  • potassium sodium tartrate in the plating solution by regulating the concentration thereof to equal to or more than 0.11 M, preferably more than 0.11 M, more preferably equal to or more than 0.2 M.
  • said concentration is preferably 0.11 M to 5 M, more preferably 0.11 M to 2 M, particularly preferably 0.11 M to 0.5 M.
  • the gold deposition accelerator of the present invention does not comprise potassium sulfite.
  • the gold deposition accelerator of the present invention comprises potassium sulfite or sulfite
  • potassium sulfite in the plating solution by regulating the concentration thereof to equal to or more than 0.004 M.
  • said concentration is preferably 0.004 M to 5 M, more preferably 0.01 M to 2 M, particularly preferably 0.02 M to 0.5 M.
  • the present invention also relates to an electroless gold plating solution comprising the above-mentioned gold deposition accelerator of the present invention, a water-soluble source of gold and a complexing agent.
  • the concentration of the alkali metal compound is preferably equal to or more than 0.001 M, more preferably equal to or more than 0.01 M, particularly preferably equal to or more than 0.02 M on an alkali metal ion basis other than sodium.
  • said concentration is preferably 0.001 M to 5 M, more preferably 0.01 M to 2 M, particularly preferably 0.02 M to 0.5 M. Since a concentration dependency to a certain extent is also recognized for the gold deposition speed, the desired gold deposition speed can be regulated by regulating the concentration.
  • a source of gold used for the present invention water-soluble gold salts such as a gold sulfite salt and a chloroauric acid salt can be used, in particular. It is preferable to use a source of gold comprising no cyanide in terms of safety and waste water treatment issues.
  • the concentration of the source of gold is preferably 0.1 to 10 g/L, even preferably 0.5 to 5 g/L.
  • sodium gold sulfite is used for example, its concentration range is preferably 0.1 to 10 g/L, even preferably 0.5 to 5 g/L on a gold concentration basis, considering the property of the deposition film.
  • the source of gold does not comprise any alkali metal other than sodium.
  • the gold deposition accelerator of the present invention comprises an alkali metal compound comprising no gold.
  • the electroless gold plating solution of the present invention further comprises an alkali metal compound comprising no gold, and in this case, the concentration of the alkali metal ion other than sodium in the electroless gold plating solution is preferably equal to or more than 0.001 M, more preferably equal to or more than 0.01 M, particularly preferably equal to or more than 0.02 M.
  • said concentration is preferably 0.001 M to 5 M, more preferably 0.01 M to 2 M, particularly preferably 0.02 M to 0.5 M.
  • the concentration of said alkali metal ion is the combined concentration of the alkali metal ion derived from the source of gold and the alkali metal ion derived from the above-mentioned alkali metal compound comprising no gold (not including sodium ion).
  • the complexing agent used for the present invention is not particularly limited, but include, for example in particular, a compound capable of forming a complex with a monovalent or trivalent gold ion such as sulfite, thiosulfite, and the like.
  • concentration of the complexing agent is preferably 0.001 M to 5 M, even preferably 0.01 M to 0.5 M, and when sodium sulfite is for example used as a complexing agent, its concentration range is preferably 0.001 to 5 M, even preferably 0.01 to 0.5 M.
  • a pH regulator various acids such as sulfuric acid, hydrochloric acid, phosphoric acid; hydroxide salts such as potassium hydroxide; and amines such as NR 4 OH (R: hydrogen or alkyl) with a restriction and the like can be used for example.
  • a phosphate buffer is used for example as a pH regulator, it is preferable to perform by phosphoric acid and sodium hydroxide or potassium hydroxide.
  • pH is preferably in the range of 5 to 11, even preferably 6 to 10, depending on its composition.
  • the gold deposition accelerator of the present invention can be added to a plating solution for electroless gold plating
  • said plating solution can also be used for any of the methods of autocatalytic electroless gold plating, substrate-catalytic (surface-catalytic) gold plating, immersion gold plating and plating in combination thereof.
  • deposition accelerativity it is preferable to be used for immersion gold plating.
  • the plating solution of the present invention may or may not comprise a reducing agent.
  • the reducing agent includes ascorbates such as sodium ascorbate; hydroxylamine or salts of hydroxylamine such as hydroxylamine hydrochloride, hydroxylamine sulfate; hydroxylamine derivatives such as hydroxylamine-O-sulfonic acid; hydrazine; amine borane compounds such as dimethylamine borane; boron hydride compounds such as sodium boron hydride, sugars such as glucose; hypophosphites, etc.
  • These reducing agents may be used alone or in combination of two or more.
  • any compound judged to be capable of depositing gold by reduction from gold ions or gold complexes according to the Nernst equation may be used, but is used in consideration of the reactivity toward other bath components, the bath stability, etc.
  • the plating solution of the present invention can use other additives such as grain-shape regulator, brightener in an appropriate range of concentration.
  • Other additives are not particularly limited, and additives that have conventionally been used can be used for example. Namely, grain-shape regulators such as polyethylene glycol, brighteners such as thallium, copper, antimony, lead are included. Any other additives besides these additives can be used as long as they meet the above-mentioned condition.
  • the electroless gold plating solution of the present invention does not comprise potassium sodium tartrate.
  • the electroless gold plating solution of the present invention comprises potassium sodium tartrate or tartrate
  • potassium sodium tartrate in the plating solution by regulating the concentration thereof to equal to or more than 0.11 M, preferably more than 0.11 M, more preferably equal to or more than 0.2 M on an alkali metal ion basis other than sodium.
  • said concentration is preferably 0.01 M to 5 M, more preferably 0.01 M to 2 M, particularly preferably 0.01 M to 0.5 M.
  • the electroless gold plating solution of the present invention does not comprise potassium sulfite.
  • the electroless gold plating solution of the present invention comprises potassium sulfite
  • said concentration is 0.004 M to 5 M, more preferably 0.01 M to 2 M, particularly preferably 0.02 M to 0.5 M.
  • the electroless gold plating solution of the present invention when the electroless gold plating solution comprises only a potassium compound as an alkali metal compound, it comprises a potassium compound other than potassium compounds selected from potassium halide, potassium sulfite and potassium sodium tartrate.
  • the present invention also relates to a gold deposition accelerator comprising a rubidium compound and/or cesium compound.
  • Gold deposition is accelerated by a rubidium ion and cesium ion.
  • the concentration of the rubidium ion is preferably 0.001 to 5 M, more preferably 0.01 to 2M, particularly preferably 0.02 to 0.5 M.
  • the concentration of the cesium ion is preferably 0.001 to 5 M, more preferably 0.01 to 2 M, particularly preferably 0.02 to 0.5 M.
  • Examples of rubidium compounds and/or cesium compounds include the similar compounds included as the examples for the above-mentioned alkali metal compounds.
  • the gold deposition speed of the electroless gold plating solution comprising the gold deposition accelerator of the present invention may be equal to or more than 0.003 ⁇ m/min, preferably equal to or more than 0.004 ⁇ m/min, more preferably equal to or more than 0.005 ⁇ m/min on 4 cm 2 Ni substrate at pH 7, bath temperature of 80° C.
  • the present invention also relates to a method of forming a gold plating film comprising a step of applying the electroless gold plating solution of the present invention on a surface of an electronic industrial component.
  • the operating temperature of the electroless gold plating solution in said step is preferably 20 to 90° C., more preferably 40 to 70° C.
  • pH is preferably 5 to 11, more preferably 6 to 10.
  • the electronic industrial component is not particularly limited, but typically includes electrodes, wirings, etc.
  • the present invention also relates to a method of accelerating gold deposition in electroless gold plating comprising adding one or more alkali metal compound(s) in an electroless gold plating solution, wherein said alkali metal compound is not a compound comprising only sodium as an alkali metal, and said alkali metal compound is not only halide, only potassium sulfite, or only potassium sodium tartrate of an alkali metal.
  • the concentration of said alkali metal compound in the method of accelerating gold deposition of the present invention may be 0.001 to 5 M, preferably 0.01 to 2 M, more preferably 0.02 to 0.5 M on an alkali metal ion basis other than sodium.
  • the method of accelerating gold deposition of the present invention does not comprise potassium sodium tartrate.
  • the method of accelerating gold deposition of the present invention comprises potassium sodium tartrate
  • said concentration is preferably 0.11 M to 5 M, more preferably 0.11 M to 2 M, particularly preferably 0.11 M to 0.5 M.
  • the method of accelerating gold deposition of the present invention does not comprise potassium sulfite.
  • the method of accelerating gold deposition of the present invention comprises potassium sulfite
  • said concentration is preferably 0.004 M to 5 M, more preferably 0.01 M to 2 M, particularly preferably 0.02 M to 0.5 M.
  • the present invention also relates to a method of accelerating gold deposition in electroless gold plating by adding a rubidium compound and/or cesium compound.
  • the total concentration of the rubidium compound and/or cesium compound is preferably 0.001 M to 5 M, more preferably 0.01 M to 1 M on a rubidium ion and/or cesium ion basis.
  • its preferable concentration is 0.001 M to 5 M, more preferably 0.01 M to 1 M on a rubidium ion basis.
  • a preferable concentration is 0.001 M to 5 M, more preferably 0.001 M to 1 M on a cesium ion basis.
  • the present invention also relates to, in another embodiment, a method of accelerating gold deposition in electroless gold plating, wherein the concentration of an alkali metal ion in an electroless gold plating solution is regulated to regulate a gold deposition speed.
  • the concentration of the total alkali metal ions in the electroless gold plating solution is regulated to be 0.001 M to 5 M, preferably 0.01 M to 2 M, more preferably 0.02 M to 0.5 M.
  • the electroless gold plating solution of the present invention is explained further in detail below by reference to working examples and comparative examples, which however are not to limit the present invention in any way.
  • a copper plate was used as a plating sample, and this was subjected to Ni alloy plating by the procedure below and used for testing.
  • the sources of gold, the complexing agents in Table 1 were mixed in the concentrations in Table 1 to prepare gold plating solutions, and pH of the gold plating solutions were regulated to pH 7.0 by using phosphoric acid as a pH regulator.
  • a 4 cm 2 Ni rolling plate was used, plating was performed for 10 minutes at 80° C., the film thickness was measured, and the deposition speed was calculated.
  • the sources of gold, the complexing agents, the deposition accelerators in Table 1 were mixed in the concentrations in Table 1 to prepare gold plating solutions, and pH of the gold plating solutions were regulated to pH 7.0 by using phosphoric acid as a pH regulator.
  • a 4 cm 2 Ni rolling plate was used, plating was performed for 10 minutes at 80° C., the film thickness was measured, and the deposition speed was calculated.
  • FT-9500X X-ray fluorescence film thickness meter by Hitachi was used.
  • FIG. 1 is of a comparison of deposition speeds when an alkali metal ion is changed based on the results of comparative example 1, working examples 1-3 of Table 1. It was recognized that a gold deposition speed improves by adding an alkali metal ion. In addition, it was recognized that a gold deposition speed depends on an alkali metal ion, since working example 1, working example 2 and working example 3 have different gold deposition speeds in spite of them all comprising a carbonate ion in the same concentration.
  • the gold deposition speed is large as compared to an electroless gold plating solution comprising no gold deposition accelerator, even after changing the kinds of cesium salt, source of gold and complexing agent.
  • a sufficient gold deposition speed can be realized even in electroless plating using an electroless gold plating solution which does not have cyanide compound as a source of gold and has a slow deposition speed.

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  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemically Coating (AREA)
US16/473,764 2016-12-27 2016-12-27 Cyanide-free liquid composition for immersion gold plating Abandoned US20210095378A1 (en)

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EP (1) EP3564407A4 (ja)
JP (1) JP6842475B2 (ja)
KR (1) KR20190096420A (ja)
CN (1) CN110114507A (ja)
WO (1) WO2018122989A1 (ja)

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JPS6350570A (ja) * 1986-08-12 1988-03-03 ニツカン工業株式会社 金属メツキされたチタン酸アルカリおよびその製造方法
US4985076A (en) * 1989-11-03 1991-01-15 General Electric Company Autocatalytic electroless gold plating composition
US4978559A (en) * 1989-11-03 1990-12-18 General Electric Company Autocatalytic electroless gold plating composition
US5206055A (en) * 1991-09-03 1993-04-27 General Electric Company Method for enhancing the uniform electroless deposition of gold onto a palladium substrate
JP3227505B2 (ja) * 1993-07-16 2001-11-12 奥野製薬工業株式会社 置換型無電解金めっき液
JP3892730B2 (ja) 2002-01-30 2007-03-14 関東化学株式会社 無電解金めっき液
JP4603320B2 (ja) * 2003-10-22 2010-12-22 関東化学株式会社 無電解金めっき液
JP5526462B2 (ja) 2006-04-18 2014-06-18 日立化成株式会社 無電解金めっき液及び無電解金めっき方法
JP5026107B2 (ja) * 2007-02-23 2012-09-12 関東化学株式会社 無電解金めっき液およびそれを用いためっき方法
JP4758470B2 (ja) 2008-12-18 2011-08-31 シャープ株式会社 突起電極の形成方法及び置換金めっき液
JP5371465B2 (ja) * 2009-02-09 2013-12-18 メタローテクノロジーズジャパン株式会社 非シアン無電解金めっき液及び導体パターンのめっき方法
JP5370886B2 (ja) 2009-03-10 2013-12-18 関東化学株式会社 金微細構造体形成用無電解金めっき液およびこれを用いた金微細構造体形成方法ならびにこれを用いた金微細構造体
DE102010012204B4 (de) * 2010-03-19 2019-01-24 MacDermid Enthone Inc. (n.d.Ges.d. Staates Delaware) Verbessertes Verfahren zur Direktmetallisierung von nicht leitenden Substraten
JP2017210630A (ja) * 2014-10-02 2017-11-30 日本板硝子株式会社 無電解めっき下地剤及びその製造方法並びに該無電解めっき下地剤を用いためっき積層体

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WO2018122989A1 (ja) 2018-07-05
JPWO2018122989A1 (ja) 2019-12-26
EP3564407A4 (en) 2020-10-21
EP3564407A1 (en) 2019-11-06
KR20190096420A (ko) 2019-08-19
JP6842475B2 (ja) 2021-03-17

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