US20190175004A1 - Imaging module for endoscope, and endoscope - Google Patents

Imaging module for endoscope, and endoscope Download PDF

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Publication number
US20190175004A1
US20190175004A1 US16/280,335 US201916280335A US2019175004A1 US 20190175004 A1 US20190175004 A1 US 20190175004A1 US 201916280335 A US201916280335 A US 201916280335A US 2019175004 A1 US2019175004 A1 US 2019175004A1
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Prior art keywords
imaging module
semiconductor
central region
sealing layer
disposed
Prior art date
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Abandoned
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US16/280,335
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English (en)
Inventor
Takuro Suyama
Takatoshi IGARASHI
Kensuke SUGA
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Olympus Corp
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Olympus Corp
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Assigned to OLYMPUS CORPORATION reassignment OLYMPUS CORPORATION ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). Assignors: SUYAMA, TAKURO, IGARASHI, TAKATOSHI, SUGA, KENSUKE
Publication of US20190175004A1 publication Critical patent/US20190175004A1/en
Abandoned legal-status Critical Current

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    • A—HUMAN NECESSITIES
    • A61—MEDICAL OR VETERINARY SCIENCE; HYGIENE
    • A61B—DIAGNOSIS; SURGERY; IDENTIFICATION
    • A61B1/00—Instruments for performing medical examinations of the interior of cavities or tubes of the body by visual or photographical inspection, e.g. endoscopes; Illuminating arrangements therefor
    • A61B1/04—Instruments for performing medical examinations of the interior of cavities or tubes of the body by visual or photographical inspection, e.g. endoscopes; Illuminating arrangements therefor combined with photographic or television appliances
    • A61B1/05—Instruments for performing medical examinations of the interior of cavities or tubes of the body by visual or photographical inspection, e.g. endoscopes; Illuminating arrangements therefor combined with photographic or television appliances characterised by the image sensor, e.g. camera, being in the distal end portion
    • A61B1/051—Details of CCD assembly
    • A—HUMAN NECESSITIES
    • A61—MEDICAL OR VETERINARY SCIENCE; HYGIENE
    • A61B—DIAGNOSIS; SURGERY; IDENTIFICATION
    • A61B1/00—Instruments for performing medical examinations of the interior of cavities or tubes of the body by visual or photographical inspection, e.g. endoscopes; Illuminating arrangements therefor
    • A61B1/00002—Operational features of endoscopes
    • A61B1/00004—Operational features of endoscopes characterised by electronic signal processing
    • A61B1/00009—Operational features of endoscopes characterised by electronic signal processing of image signals during a use of endoscope
    • A—HUMAN NECESSITIES
    • A61—MEDICAL OR VETERINARY SCIENCE; HYGIENE
    • A61B—DIAGNOSIS; SURGERY; IDENTIFICATION
    • A61B1/00—Instruments for performing medical examinations of the interior of cavities or tubes of the body by visual or photographical inspection, e.g. endoscopes; Illuminating arrangements therefor
    • A61B1/00112—Connection or coupling means
    • A61B1/00114—Electrical cables in or with an endoscope
    • A—HUMAN NECESSITIES
    • A61—MEDICAL OR VETERINARY SCIENCE; HYGIENE
    • A61B—DIAGNOSIS; SURGERY; IDENTIFICATION
    • A61B1/00—Instruments for performing medical examinations of the interior of cavities or tubes of the body by visual or photographical inspection, e.g. endoscopes; Illuminating arrangements therefor
    • A61B1/00112—Connection or coupling means
    • A61B1/00121—Connectors, fasteners and adapters, e.g. on the endoscope handle
    • A61B1/00124—Connectors, fasteners and adapters, e.g. on the endoscope handle electrical, e.g. electrical plug-and-socket connection
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    • A61B1/04—Instruments for performing medical examinations of the interior of cavities or tubes of the body by visual or photographical inspection, e.g. endoscopes; Illuminating arrangements therefor combined with photographic or television appliances
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Definitions

  • This disclosure relates to an imaging module for an endoscope, in which an imaging device and a semiconductor device are bonded together, and also to an endoscope having the imaging module with the imaging device and the semiconductor device bonded together.
  • JP 2005-334509A discloses an imaging module with a wiring board bonded to a back side of an imaging device.
  • Electronic component chips such as capacitors, resistors and integrated circuits (ICs), which make up a drive circuit, are mounted on the wiring board.
  • the imaging module with the wiring board, on which the electronic component chips are mounted has a large length in the direction of its optical axis. It is, therefore, not easy to shorten the rigid tip portion of the endoscope.
  • An imaging module can be reduced in diameter and length by bonding a semiconductor device, on which such a planar device is formed, to a back side of the imaging module by flip-chip technology.
  • tensile stress is applied by assembly work of the imaging module in a casing or by bending operation of an endoscope. If the bonding strength of a bonding portion between an imaging device and a semiconductor device is not sufficient, the application of stress to the bonding portion via the signal cable may hence cause a connection failure, thereby leading to a possible reduction in reliability.
  • This disclosure has as objects thereof the provision of a high-reliability imaging module for an endoscope and a high-reliability endoscope.
  • the first semiconductor device includes respective opposed first and second major surfaces having a first central region.
  • the first major surface includes a semiconductor circuit portion disposed in the central region thereof.
  • a through-silicon via is disposed in an intermediate region surrounding the first central region.
  • the through-silicon via is connected to the semiconductor circuit portion.
  • the second major surface includes a first electrode located in the first central region thereof. The first electrode is connected to the through-silicon via.
  • the second semiconductor device includes respective opposed third and fourth major surfaces having a second central region.
  • the third major surface includes a second electrode disposed in the second central region thereof.
  • the rearmost semiconductor device includes an external connection terminal disposed on the rear wall thereof and to which the signal cable is connected. At least one bonding portion is disposed between the first electrode and the second electrode in the respective first and second central regions.
  • a high-reliability imaging module for an endoscope and a high-reliability endoscope can be provided.
  • FIG. 1 is a perspective view of an imaging module of a first embodiment.
  • FIG. 2 is a cross-sectional view of the imaging module of the first embodiment as taken along line II-II of FIG. 1 .
  • FIG. 3 is a rear view of an imaging device in the imaging module of the first embodiment.
  • FIG. 4 is a rear view of an imaging device in an imaging module of Modification 1 of the first embodiment.
  • FIG. 5 is a rear view of an imaging device in an imaging module of Modification 2 of the first embodiment.
  • FIG. 6 is a rear view of an imaging device in an imaging module of Modification 3 of the first embodiment.
  • FIG. 7 is a rear view of an imaging device in an imaging module of Modification 4 of the first embodiment.
  • FIG. 8 is a cross-sectional view of an imaging module of a second embodiment.
  • FIG. 9 is a cross-sectional view of the imaging module of the second embodiment as taken along line IX-IX of FIG. 8 .
  • FIG. 10 is a cross-sectional view of an imaging module of a modification of the second embodiment.
  • FIG. 11 is a cross-sectional view of an imaging module of a third embodiment.
  • FIG. 12 is a cross-sectional view of an imaging module of a modification of the third embodiment.
  • FIG. 13 is a perspective view of an endoscope of a fourth embodiment.
  • An imaging module 1 of this embodiment for an endoscope (hereinafter referred to as “the imaging module 1 ”) is accommodated in a tip portion 9 A of an endoscope 9 (see FIG. 12 ).
  • the imaging module 1 of this embodiment includes an imaging device 10 , as a first semiconductor, and a second semiconductor 20 stacked together with a sealing layer interposed between them.
  • the semiconductor devices 10 and 20 including the imaging device 10 , are stacked together.
  • a wiring board 40 and a signal cable 41 may be omitted. Described specifically, although not depicted in FIG. 1 and so on but as depicted in FIG. 11 , the wiring board 40 is connected to external connection terminals 29 on a rear wall 20 SB of the second semiconductor device 20 of the imaging module 1 , and further, the signal cable 41 is connected to the wiring board 40 .
  • the imaging module 1 includes the semiconductor devices 10 and 20 including the imaging device 10 and stacked together with the sealing layer 30 interposed therebetween, and transmits signals via the signal cable 41 connected to the rear wall 20 SB.
  • the imaging module 1 also includes the external connection terminals 29 , which are disposed on the rear wall 20 SB of the rearmost semiconductor device 20 of the semiconductor devices 10 and 20 and to which the signal cable 41 is connected.
  • the imaging device 10 which is rectangular as viewed in plan, in other words, has a rectangular cross-sectional shape taken in a direction orthogonal to the optical axis O, is a substantially rectangular parallelepipedal flat plate having a first major surface 10 SA and a second major surface 10 SB opposing the first major surface 10 SA.
  • a light-receiving portion 11 is formed as a first semiconductor circuit portion in a central region S 1 of the first major surface 10 SA.
  • the light-receiving portion 11 is a charge-coupled device (CCD) or complementary metal oxide semiconductor (CMOS) light-receiving circuit or the like, receives light, and subjects it to photoelectric conversion to generate an electrical signal.
  • CCD charge-coupled device
  • CMOS complementary metal oxide semiconductor
  • Via a plurality of through-silicon vias 12 disposed in an intermediate region S 2 that surrounds the central region S 1 the light-receiving portion 11 is connected to a plurality of first electrodes 13 disposed in the central region S 1 of the second major surface 10 SB.
  • the central region S 1 is a region in which the first electrodes 13 are disposed
  • the intermediate region is a region around the central region S 1
  • the through-silicon vias 12 are disposed in the intermediate region S 2 .
  • conductive traces 14 are disposed connecting the through-silicon vias 12 in the intermediate region S 2 and the first electrodes 13 in the central region S 1 together.
  • the second semiconductor device 20 which is rectangular as viewed in plan, has a third major surface 20 SA and a fourth major surface 20 SB opposing the third major surface 20 SA.
  • the second semiconductor device 20 has, on the third major surface 20 SA, a plurality of second electrodes 23 connected to the first electrodes 13 of the imaging device 10 , respectively.
  • the second electrodes 23 are disposed in the central region S 1 of the third major surface 20 SA of the second semiconductor device 20 .
  • the first electrodes 13 and the second electrodes 23 are bonded together via bumps 15 of 1 ⁇ m to 50 ⁇ m high. However, the first electrodes 13 and the second electrodes 23 may be bonded together without interposing such bumps.
  • the second semiconductor device 20 processes electrical signals outputted from the imaging device 10 , and outputs them as imaging signals.
  • a planar device 21 is a second semiconductor circuit portion that makes up a circuit having functions of electronic components such as capacitors, resistors and buffers, or a signal processing circuit such as a noise elimination circuit or an analog-to-digital conversion circuit.
  • the imaging module 1 is a wafer-level module fabricated by cutting a bonded wafer of an imaging wafer, which contains a plurality of imaging devices 10 , and a second semiconductor wafer, which contains a plurality of second semiconductor devices 20 , bonded together. Therefore, a projection image of the imaging device 10 and a projection image of the second semiconductor device 20 , as projected on a projection plane extending in directions orthogonal to the optical axis, are overlapping completely. Accordingly, the imaging module 1 is small in diameter. Further, the imaging module 1 , in which the second semiconductor device 20 with the planar device 21 formed thereon is bonded to the imaging device 10 , is short.
  • the imaging module 1 may be a block-level module, which can be fabricated by cutting respective wafers into rectangular or square blocks, each including plural devices, and subsequent to bonding of plural blocks, dividing the bonded blocks into individual pieces.
  • Block-level module technology has a higher degree of freedom in the layout of devices on wafers than wafer-level module technology.
  • the second electrodes 23 of the second semiconductor device 20 are connected to the planar device 21 on the fourth major surface 20 SB via through-silicon vias 22 in the intermediate region S 2 .
  • conductive traces which connect the second electrodes 23 in the central region S 1 and the through-silicon vias 22 in the intermediate region S 2 together are disposed on the third major surface 20 SA of the second semiconductor device 20 .
  • the sealing layer 30 is disposed between the imaging device 10 and the second semiconductor device 20 .
  • the sealing layer 30 is formed from insulating resin such as epoxy resin, acrylic resin, polyimide resin, silicone resin or polyvinyl resin.
  • the imaging device 10 and second semiconductor device 20 each have a thickness of 5 to 100 ⁇ m or so, although they may have different thicknesses as will be described hereinafter.
  • the planer device 21 may be formed on only one side of the semiconductor device 20 , or two planar devices may be formed on both sides of the semiconductor device 20 , respectively.
  • the bonding portions between the first electrodes 13 of the imaging device 10 and the second electrodes 23 of the second semiconductor device 20 are formed from metal.
  • Metal has a small elastically-deformable range, and therefore has a potential problem in that, if a large stress is applied, cracks may occur in the joining portions and/or joining surfaces may separate.
  • the sealing layer 30 is disposed between the imaging device 10 and the second semiconductor device 20 .
  • the sealing layer 30 made from the resin has a large elastically-deformable range, and therefore absorbs stress through elastic deformation.
  • the central region S 1 has a so-called “rigid” structure while the outer peripheral region S 3 which surrounds the intermediate region S 2 has a so-called “softer” structure than the central region S 1 .
  • stress to be applied to the imaging module 1 is applied via the signal cable (not depicted) connected to the second semiconductor device 20 that forms the rear wall of the imaging module 1 .
  • the imaging module 1 is highly reliable because all the bonding portions are disposed in only the central region S 1 remote from the outer peripheral region S 3 . Moreover, the imaging module 1 absorbs stress through elastic deformation of the sealing layer 30 disposed in the outer peripheral region S 3 so that stress to be applied to the joining portions and the through-silicon vias 12 and 22 is reduced.
  • Imaging modules of modifications of the first embodiment for endoscopes are similar to the imaging module 1 and have like advantageous effects as in the imaging module 1 , and elements in the modifications, which have like functions to those of the corresponding elements in the imaging module 1 , will be designated by the same numeral references and their description is omitted herein.
  • the first electrodes 13 and second electrodes 23 disposed in the first region S 1 are arranged in a circular pattern.
  • the pumps 15 as the joining portions between the first electrodes 13 and the second electrodes 23 are arranged on the circumference of a single circle.
  • the bumps 15 as joining portions between the first electrodes 13 and the second electrodes 23 are arranged in a rectangular pattern.
  • the bumps 15 are not arranged in a circular pattern.
  • the arrangement of the bumps is not limited to a circular pattern insofar as the bumps are arranged in the central region S 1 only.
  • the imaging module 1 with the bumps 15 arranged in the circular pattern has high reliability than the imaging module 1 A.
  • the first electrodes 13 and the second electrodes 23 are both arranged in a concentric circular pattern.
  • the bumps 15 as bonding portions between the first electrodes 13 and the second electrodes 23 are arranged on the circumferences of two circles having the same central point.
  • the first electrodes 13 include first electrodes 13 A arranged on the circumference of an inner circle and first electrodes 13 B arranged on the circumference of an outer circle.
  • the imaging module 1 B facilitates the arrangement of many bonding portions. Such bonding portions may be arranged on the circumferences of three or more circles, or may also be arranged in a central region of a circle.
  • the imaging device 10 A in the imaging module 1 B is of the back-illuminated type, and through-silicon vias 12 A that connect the light-receiving portion and the second major surface 10 SB are arranged in a circular pattern.
  • some of the through-silicon vias 12 A may be formed in a central region opposing the light-receiving portion.
  • the imaging module 1 B with the through-silicon vias 12 A arranged in the circular pattern has higher reliability than the imaging module 1 if stress applied to the imaging module 1 B via the signal cable 41 is isotropic in a plane orthogonal to the optical axis O.
  • the first electrodes 13 and the second electrodes 23 are arranged in a concentric pattern.
  • the joining portions arranged on the side of an inner circumference each have a smaller size, specifically a smaller area as viewed in directions orthogonal to the optical axis, specifically in the directions of an XY plane than the joining portions arranged on the side of an outer circumference.
  • the number of bonding portions per unit area is greater on the side of the inner circumference than on the side of the outer circumference.
  • the first electrodes 13 consist of first electrodes 13 C arranged on the circumference of an inner circle and first electrodes 13 D arranged on the circumference of an outer circle.
  • the first electrodes 13 C have a smaller size than the first electrodes 13 D.
  • the imaging module 1 C facilitates to arrange more joining portions in a region close to the center, in other words, on the side of the inner circumference, and therefore has higher reliability than the imaging module 1 B.
  • an imaging module 1 D there are dummy bonding portions, which do not electrically connect the imaging device 10 as the first semiconductor device and the second semiconductor device 20 , in the central region S 1 and on the side of an outer circumference than the joining portions.
  • first dummy electrodes 13 E which are not connected to the through-silicon vias 12 are disposed on the second major surface 10 SB of the imaging device 10 .
  • the first dummy electrodes 13 E are bonded to second dummy electrodes of the second semiconductor device 20 via the bumps 15 as bonding portions.
  • the first dummy electrodes 13 E are arranged so that they surround the first electrodes 13 .
  • the first electrodes 13 are arranged only inside a polygonal shape formed by connecting centers of the first dummy electrodes 13 E.
  • the imaging module 1 D has still higher reliability as the bonding portions are protected by the dummy bonding portions.
  • An imaging module 1 E of a second embodiment for an endoscope is similar to the imaging module 1 and the like and has like advantageous effects as in the imaging module 1 and the like, and elements in the imaging module 1 E, which have like functions to those of the corresponding elements in the imaging module 1 and the like, will be designated by the same numeral references and their description is omitted herein.
  • the sealing layer 30 E includes a first sealing layer 31 disposed in the central region S 1 and intermediate region S 2 , and a second sealing layer 32 disposed in the outer peripheral region S 3 and having a smaller Young's modulus than the first sealing layer 31 .
  • the sealing layer 30 E can be disposed, for example, by arranging the first sealing layer 31 , which has been subjected to patterning beforehand, on the bonding surface of the second semiconductor layer 20 before bonding the imaging device 10 as the first semiconductor device and the second semiconductor device 20 together, bonding the imaging device 10 to the second semiconductor device 20 with the first sealing layer 31 interposed therebetween, and then injecting a liquid resin into a gap between the bonding surface of the imaging device 10 and the bonding surface of the second semiconductor device 20 to form the second sealing layer 32 .
  • the central region S 1 and intermediate region S 2 where the bonding portions and through-silicon vias are disposed, are protected by the first sealing layer 31 having the high Young's modulus.
  • the second sealing layer 32 that undergoes elastic deformation to absorb stress is disposed.
  • the first sealing layer 31 may preferably have a Young's modulus of 1 GPa or greater
  • the second sealing layer 32 may preferably have a Young's modulus of not less than 1 MPa to not more than 500 MPa.
  • the first sealing layer 31 may be made from an epoxy resin having a Young's modulus of 8 GPa
  • the second sealing layer 32 may be made from a silicone resin having a Young's modulus of 50 MPa.
  • the imaging module 1 E has higher reliability than the imaging module 1 which has the single sealing layer 30 .
  • the intermediate region S 2 with the through-silicon vias disposed therein is also protected by the first sealing layer 31 .
  • the second sealing layer 32 is disposed in the intermediate region S 2 .
  • the second sealing layer 32 of such a large area has strong stress absorbing effect, and therefore can more reliably protect the bonding portions disposed in the central region S 1 .
  • the first sealing layer 31 is circular, and therefore can be disposed by dropping a liquid resin without conducting patterning.
  • the imaging modules 1 E and 1 F also include bonding portions of the same configuration as in the imaging modules 1 A to 1 D, and therefore obviously have the same advantageous effects as the imaging modules 1 A to 1 D.
  • An imaging module 1 G of a third embodiment for an endoscope is similar to the imaging module 1 and the like and has like advantageous effects as in the imaging module 1 and the like, and therefore elements in the imaging module 1 G, which have like functions to those of the corresponding elements in the imaging module 1 and the like, will be designated by the same numeral references and their description is omitted herein.
  • the imaging module 1 G semiconductor devices 20 A to 20 C are stacked together in addition to the imaging device 10 .
  • the signal cable 41 is connected via the wiring board 40 that uses a flexible substrate.
  • signal connection pads 49 are connected via the external connection terminals 29 .
  • the imaging device 10 and semiconductor devices 20 A to 20 C have substantially the same configurations as the imaging device 10 as the first semiconductor device and the second semiconductor device 20 , both of which have already been explained hereinbefore, respectively, and are stacked together with sealing layers 30 E of substantially the same configuration as the sealing layer 30 E in FIGS. 8 and 9 being interposed therebetween, respectively.
  • the third semiconductor device 20 B has a fifth major surface 20 BSA and a sixth major surface 20 BSB opposing the fifth major surface 20 BSA.
  • a semiconductor circuit portion 21 B is disposed in the central region S 1 of the sixth major surface 20 BSB, and through-silicon vias 22 B are disposed in the intermediate region S 2 surrounding the central region S 1 and are connected to the semiconductor circuit portion 21 B.
  • First electrodes 13 B are disposed in the central region S 1 of the fifth major surface 20 BSA and are connected to the through-silicon vias 22 B.
  • Second electrodes 23 B are disposed in the central region S 1 of the sixth major surface 20 BSB. Therefore, in the third semiconductor device 20 B, bonding portions with the second semiconductor device 20 A and bonding portions with the fourth semiconductor device 20 C are disposed in the central region S 1 only.
  • first electrodes 13 B, second electrodes 23 B and through-silicon vias 22 B may be formed in an inner peripheral portion of the semiconductor circuit portion 21 B and a region opposing the semiconductor circuit portion 21 B.
  • the semiconductor circuit portion 21 B may be formed in the intermediate region S 2 and outer peripheral region S 3 .
  • the imaging module 1 G of this embodiment may include three or more semiconductor devices insofar as the imaging device 10 is included.
  • the advantageous effects of the present disclosure are remarkable especially when four or more semiconductor devices are stacked together.
  • an imaging module with three or more semiconductor devices stacked together at least two adjacent semiconductor devices are needed to have the same configuration as the semiconductor devices in the imaging module 1 and the like.
  • an imaging module with four or more semiconductor devices stacked together however, strongest stress is applied between front most two semiconductor devices and between rearmost two semiconductor devices so that these semiconductor devices may preferably have the same configuration as the semiconductor devices in the imaging module 1 and the like.
  • An imaging module 1 H of a modification of the third embodiment is similar to the imaging module 1 G and has like advantageous effects as in the imaging module 1 H, and elements in the imaging module 1 H, which have like functions to those of the corresponding elements in the imaging module 1 G, will be designated by the same numeral references and their description is omitted herein.
  • the wiring board 40 uses, as its substrate, the flexible substrate having flexibility so that cable 41 can be easily connected.
  • a wiring board 45 in the imaging module 1 H depicted in FIG. 12 uses a rigid substrate as its substrate.
  • the signal connection pads 49 for the wiring board 45 are bonded to the external connection terminals 29 of the semiconductor device 20 C.
  • two signal cables 41 are connected to side walls of the wiring board 45 , respectively.
  • the wiring board 45 may be flexible or non-flexible.
  • the signal cables 41 may be connected commonly to the same wall of the wiring board 45 .
  • the signal cables 41 may be directly connected to the external connection terminals 29 without using the wiring board 45 .
  • An endoscope of a fourth embodiment includes one of the imaging modules 1 and 1 A to 1 G which have already been explained hereinbefore.
  • the endoscope 9 includes, for example, an insertion portion 9 B with the imaging module 1 accommodated in the tip portion 9 A thereof, a control portion 9 C disposed on the side of a proximal end of the insertion portion 9 B, and a universal cord 9 D extending from the control portion 9 C.
  • the universal cord 9 D is connected to the signal cable 41 of the imaging module 1 while the signal cable 41 is connected to the external connection terminals 29 .
  • the endoscope 9 has high reliability, because it has one of the imaging modules 1 and 1 A to 1 G in the tip portion 9 A of the insertion portion 9 B.
  • the endoscope 9 is a soft endoscope, but may be a rigid endoscope.
  • the endoscope 9 may be a medical endoscope or an industrial endoscope.
  • the imaging module 1 and the like for endoscopes have been described hereinbefore, but the imaging module of the present disclosure should not be limited to the use in endoscopes. Described specifically, insofar as such an imaging device that stress is applied to an imaging module by movement of a signal cable connected to the imaging module is concerned, the same advantageous effects can be obtained by fabricating the imaging module in the same configuration as the imaging module of the present disclosure.
  • the present disclosure can also be applied to imaging modules for devices other than endoscopes, such as, for example, an imaging module mounted in a tip portion of a moving microminiature robot arm and an imaging module capable of conducting focal adjustment or the like by movement in the direction of an optical axis without relying upon a lens unit.
  • an imaging module of an endoscope comprises a plurality of semiconductor devices includes respective first and second semiconductor devices being electrically stacked to one another with a sealing layer interposed therebetween to transmit signals via a signal cable connected to a rear wall of a rearmost one of the plurality of semiconductor devices.
  • the first semiconductor device includes respective opposed first and second major surfaces having a first central region.
  • the first major surface includes a semiconductor circuit portion disposed in the central region thereof.
  • a through-silicon via is disposed in an intermediate region surrounding the first central region.
  • the through-silicon via is connected to the semiconductor circuit portion.
  • the second major surface includes a first electrode located in the first central region thereof. The first electrode is connected to the through-silicon via.
  • the second semiconductor device includes respective opposed third and fourth major surfaces having a second central region.
  • the third major surface includes a second electrode disposed in the second central region thereof.
  • the rearmost semiconductor device includes an external connection terminal disposed on the rear wall thereof and to which the signal cable is connected. At least one bonding portion is disposed between the first electrode and the second electrode in the respective first and second central regions.
  • the at least one bonding portion is defined by a plurality of bonding portions arranged in a circular pattern.
  • the plurality of bonding portions is arranged in a concentric circular pattern.
  • the imaging module wherein among the plurality of bonding portions, those which are arranged on a side of an inner circumference are smaller in size than those which are arranged on a side of an outer circumference.
  • the imaging module further comprises a dummy bonding portion disposed in the respective first and second central regions on a side of a circumference outer than a region in which each bonding portion is disposed without electrically connecting the first semiconductor device and the second semiconductor device to one another.
  • the sealing layer includes a first sealing layer disposed in the respective first and second central regions and a second sealing layer disposed in an outer peripheral region, which surrounds the intermediate region and having a smaller Young's modulus than the first sealing layer.
  • the first sealing layer is disposed in the intermediate region.
  • the first semiconductor device is the imaging device that includes a light-receiving portion as the semiconductor circuit portion.
  • the plurality of semiconductor devices has a third semiconductor device similar to the first semiconductor device or the second semiconductor device wherein the first, second and third semiconductor device are stacked to one another with a sealing layer having the same configuration as the sealing layer and interposed between each two adjacent semiconductor devices.
  • the imaging module is used in the endoscope further includes the signal cable connected to the external connection terminal.
  • a control portion is disposed on a side of a proximal end of the insertion portion.
  • a universal cord extends from the control portion. The universal cord is electrically connected to the signal cable while the signal cable is connected to the external connection terminal.
  • an imaging module comprises a first semiconductor and a second semiconductor configured to be electrically attached to the first semiconductor through a sealing layer.
  • the first semiconductor having opposed first and second surfaces.
  • the first surface having a first central region and a first intermediate region surrounding the first central region.
  • the second surface having a second central region.
  • the first semiconductor includes a semiconductor circuit in the first central region.
  • a through-silicon via in the first intermediate region, the through-silicon via being is connected to the semiconductor circuit.
  • a first electrode in the second central region, the first electrode is connected to the through-silicon via.
  • the second semiconductor having opposed third and fourth surfaces, the third surface having a third central region.
  • the second semiconductor includes a second electrode in the third central region.
  • a bump is disposed between the first electrode in the second central region and the second electrode in the third central region.
  • the first semiconductor includes an imaging device.
  • the imaging module includes a plurality of semiconductors.
  • the plurality of semiconductors includes the first semiconductor and the second semiconductor.
  • a rearmost semiconductor of the plurality of semiconductor includes a rear wall.
  • the imaging module transmits signals via a signal cable connected to the real wall.
  • the rearmost semiconductor has an external connection terminal disposed on the rear wall, the signal cable is connected to the external connection.
  • the bump includes a first plurality of bumps and a second plurality of bumps arranged in a concentric circular pattern. The first plurality of bumps forming an inner circle and the second plurality of bumps forming an outer circle. The first plurality of bumps are smaller in size than the second plurality of bumps.
  • the imaging module further comprises a dummy electrode disposed in an outer region of the second central region.
  • the outer region is outer than a region that the first electrode is disposed and the dummy bump not being electrically connecting between the first semiconductor and the second semiconductor.
  • the sealing layer includes a first sealing layer and a second sealing layer surrounding the first sealing layer.
  • the second sealing layer has a smaller Young's modulus than the first sealing layer.
  • the first sealing layer is facing the second central region and the third central region.
  • the first sealing layer is facing a second intermediate region surrounding the second central region and a third intermediate region surrounding the third central region.

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US20160056101A1 (en) * 2014-08-22 2016-02-25 Young-Kun Jee Chip-stacked semiconductor package
US20190274529A1 (en) * 2016-11-21 2019-09-12 Olympus Corporation Image pickup module and endoscope

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USD1018844S1 (en) 2020-01-09 2024-03-19 Adaptivendo Llc Endoscope handle
USD1031035S1 (en) 2021-04-29 2024-06-11 Adaptivendo Llc Endoscope handle
USD989306S1 (en) * 2021-05-05 2023-06-13 Ambu A/S Video processing apparatus
USD1009262S1 (en) 2021-05-05 2023-12-26 Ambu A/S Video processing apparatus

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US20190274529A1 (en) 2019-09-12
CN109952650B (zh) 2023-08-08
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US10660511B2 (en) 2020-05-26
CN109952650A (zh) 2019-06-28

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