US20190081168A1 - Semiconductor devices with bent portions - Google Patents

Semiconductor devices with bent portions Download PDF

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Publication number
US20190081168A1
US20190081168A1 US16/045,305 US201816045305A US2019081168A1 US 20190081168 A1 US20190081168 A1 US 20190081168A1 US 201816045305 A US201816045305 A US 201816045305A US 2019081168 A1 US2019081168 A1 US 2019081168A1
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United States
Prior art keywords
straight line
line extension
active
gate structure
active fin
Prior art date
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Abandoned
Application number
US16/045,305
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English (en)
Inventor
Hyun-Kwan Yu
Sung-min Kim
Dong-Suk Shin
Seung-Hun Lee
Dong-won Kim
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Samsung Electronics Co Ltd
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Samsung Electronics Co Ltd
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Publication date
Application filed by Samsung Electronics Co Ltd filed Critical Samsung Electronics Co Ltd
Assigned to SAMSUNG ELECTRONICS CO., LTD. reassignment SAMSUNG ELECTRONICS CO., LTD. ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). Assignors: KIM, DONG-WON, KIM, SUNG-MIN, LEE, SEUNG-HUN, SHIN, DONG-SUK, YU, HYUN-KWAN
Publication of US20190081168A1 publication Critical patent/US20190081168A1/en
Priority to US17/119,507 priority Critical patent/US11784255B2/en
Abandoned legal-status Critical Current

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    • H01L29/7855—Field effect transistors with field effect produced by an insulated gate having a channel with a horizontal current flow in a vertical sidewall of a semiconductor body, e.g. FinFET, MuGFET with at least two independent gates
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Definitions

  • Embodiments of the inventive concepts relate to semiconductor devices, and more particularly, to semiconductor devices including fin-field effect transistors (finFETs).
  • finFETs fin-field effect transistors
  • Semiconductor devices including high performance fin-FETs have been developed. As semiconductor devices have been highly integrated, memory cells in the semiconductor devices may be formed within narrow horizontal areas.
  • a semiconductor device may include a first active fin, a second active fin and a gate structure.
  • the first active fin may extend in a first direction on a substrate and may include a first straight line extension portion, a second straight line extension portion, and a bent portion between the first and second straight line extension portions.
  • the second active fin may extend in the first direction on the substrate.
  • the gate structure may extend in a second direction perpendicular to the first direction on the substrate.
  • the gate structure may cross one of the first and second straight line extension portions of the first active fin and may cross the second active fin.
  • a semiconductor device may include a first active fin, a plurality of second active fins, a plurality of third active fins, a fourth active fin, a first gate structure, a second gate structure, a third gate structure and a fourth gate structure.
  • the first active fin may extend in a first direction on a substrate.
  • the first active fin may include first and second straight line extension portions and a first bent portion between the first and second straight line extension portions.
  • the plurality of second active fins may extend in the first direction on the substrate and may be spaced apart from each other in the first direction.
  • the plurality of third active fins may extend in the first direction on the substrate and may be spaced apart from each other in the first direction.
  • the plurality of third active fins may be not aligned with the plurality of second active fins in a second direction perpendicular to the first direction.
  • the fourth active fin may extend in the first direction on the substrate.
  • the fourth active fin may include third and fourth straight line extension portions and a second bent portion between the third and fourth straight line extension portions.
  • the first gate structure may cross the first straight line extension portion.
  • the second gate structure may cross the second straight line extension portion and one of the plurality of second active fins.
  • the third gate structure may cross one of the plurality of third active fins and the third straight line extension portion.
  • the fourth gate structure may cross the fourth straight line extension portion.
  • a semiconductor device may include a first active fin, a second active fin, a first gate structure, and a second gate structure.
  • the first active fin may extend in a first direction on a substrate.
  • the first active fin may include a first straight line extension portion, a second straight line extension portion, and an oblique portion connecting the first and second straight line extension portions.
  • the second active fin may extend in the first direction on the substrate.
  • the second active fin may be parallel to the first and second straight line extension portions of the first active fin.
  • the first and second gate structures may each extend in a second direction perpendicular to the first direction on the substrate.
  • the first and second gate structures may each cross the first and second active fins.
  • the oblique portion may extend in a third direction that is oblique with respect to the first and second directions such that a first distance in the second direction between a first portion of the first active fin between the first and second gate structures and the second active fin is greater than a second distance in the second direction between a second portion of the first active fin not between the first and second gate structures and the second active fin.
  • FIG. 1 is a plan view illustrating a layout of a semiconductor device according to some embodiments of the inventive concepts.
  • FIG. 2 is a plan view illustrating a layout of a semiconductor device according to some embodiments of the inventive concepts.
  • FIGS. 3 and 4 are perspective views illustrating portions A of the semiconductor devices of FIGS. 1 and 2 , respectively, according to some embodiments of the inventive concepts.
  • FIG. 5 is a circuit diagram illustrating unit cells of an SRAM according to some embodiments of the inventive concepts.
  • FIG. 6 is a plan view illustrating a layout of cells of an SRAM according to some embodiments of the inventive concepts.
  • FIG. 7 is a cross-sectional view taken along line I-I′ in FIG. 6 according to some embodiments of the inventive concepts.
  • FIG. 8 is a plan view illustrating a layout of a semiconductor device according to some embodiments of the inventive concepts.
  • FIG. 9 is a plan view illustrating a layout of cells of an SRAM according to some embodiments of the inventive concepts.
  • FIG. 10 is a plan view illustrating a layout of cells of an SRAM according to some embodiments of the inventive concepts.
  • FIG. 11 is a cross-sectional view taken along line II-II′ in FIG. 10 according to some embodiments of the inventive concepts.
  • FIG. 12 is a plan view illustrating a layout of cells of an SRAM according to some embodiments of the inventive concepts.
  • FIG. 13 is a plan view illustrating a layout of cells of an SRAM according to some embodiments of the inventive concepts.
  • FIG. 14 is a plan view illustrating a layout of cells of an SRAM according to some embodiments of the inventive concepts.
  • FIG. 15 is a plan view illustrating a layout of cells of an SRAM according to some embodiments of the inventive concepts.
  • FIG. 16 is a plan view illustrating a layout of cells of an SRAM according to some embodiments of the inventive concepts.
  • FIG. 17 is a plan view illustrating a layout of cells of an SRAM according to some embodiments of the inventive concepts.
  • FIG. 1 is a plan view illustrating a layout of a semiconductor device according to some embodiments of the inventive concepts.
  • FIG. 2 is a plan view illustrating a layout of a semiconductor device in accordance with some embodiments of the inventive concepts.
  • FIGS. 3 and 4 are perspective views illustrating portions A of the semiconductor devices of FIGS. 1 and 2 , respectively, according to some embodiments of the inventive concepts.
  • FIG. 3 a gate structure is not shown.
  • Layouts of the semiconductor devices of FIGS. 1 and 2 may be substantially the same as or similar to each other, except for the arrangement of first active fins. Thus, the semiconductor devices of FIGS. 1 and 2 are described together. It will be understood that, although the terms “first,” “second,” etc. may be used herein to describe various elements, these elements should not be limited by these terms. These terms are only used to distinguish one element from another. Thus, a first element could be termed a second element without departing from the teachings of the present inventive concepts.
  • first active fins 12 and one or more second active fins 14 may protrude upwardly from an upper surface of a substrate 10 .
  • One or more gate structures 30 may be formed on the first and second active fins 12 and 14 , and may extend across the first and second active fins 12 and 14 .
  • the substrate 10 may include a semiconductor material, e.g., silicon, germanium, silicon-germanium, etc., or III-V semiconductor compounds, e.g., GaP, GaAs, GaSb, etc.
  • the substrate 10 may be a silicon-on-insulator (SOI) substrate, or a germanium-on-insulator (GOI) substrate.
  • SOI silicon-on-insulator
  • GOI germanium-on-insulator
  • the first and second active fins 12 and 14 may extend in a first direction substantially parallel with the upper surface of the substrate 10 .
  • An isolation layer 16 may be formed between the first and second active fins 12 and 14 .
  • the isolation layer 16 may fill a lower portion of a trench between the first and second active fins 12 and 14 .
  • the isolation layer 16 may include an oxide, e.g., silicon oxide.
  • An active region may be defined as portions of the first and second active fins 12 and 14 not covered by the isolation layer 16 .
  • the first active fin 12 may include straight line extension portions 12 a and bent portions 12 b between the straight line extension portions 12 a .
  • the bent portion 12 b may contact each of opposite ends in the first direction of adjacent straight line extension portions 12 a.
  • the straight line extension portions 12 a may extend in the first direction. Neighboring ones of the straight line extension portions 12 a in the first direction may not be in the same straight line extending in the first direction.
  • the bent portions 12 b may extend in an oblique direction with respect to the first direction.
  • the bent portions 12 b contacting respective opposite ends of a straight line extension portion 12 a may be symmetric with each other.
  • the straight line extension portions 12 a and the bent portions 12 b may be alternatively and repeatedly arranged in the first direction, to define a wavy shape of the first active fin 12 .
  • the second active fins 14 may extend in the first direction having straight line shapes with no bent portions.
  • the plurality of the second active fins 14 may be formed between ones of the first active fins 12 neighboring in a second direction perpendicular to the first direction.
  • ones of the second active fins 14 that extend in the first direction may be a plurality of collinear second active fins 14 spaced apart from each other in the first direction, and the ones of the second active fins 14 including the respective pluralities of collinear second active fins 14 may be arranged in the second direction.
  • adjacent ones of the second active fins 14 in the second direction may not be arranged in a straight line extending in the second direction but may be arranged in a zig-zag fashion in the second direction.
  • a first insulating interlayer 18 may be formed on the first and second active fins 12 and 14 and the isolation layer 16 .
  • An upper surface of the first insulating interlayer 18 may be substantially flat.
  • the upper surface of the first insulating interlayer 18 may be higher than upper surfaces of the first and second active fins 12 and 14 .
  • the first insulating interlayer 18 may cover the first and second active fins 12 and 14 .
  • the first insulating interlayer 18 may include an opening 20 or a plurality of openings 20 .
  • the opening 20 may extend in the second direction across the first and second active fins 12 and 14 .
  • the upper surfaces and sidewalls of the first and second active fins 12 and 14 may be exposed by the opening 20 .
  • the gate structure 30 may be formed in the opening 20 .
  • the gate structure 30 may extend in the second direction.
  • a plurality of gate structures 30 may be formed in the plurality of openings 20 .
  • the gate structure 30 may include a gate insulation layer 30 a , a gate electrode 30 b and a capping pattern 30 c .
  • the gate insulation layer 30 a may be formed on sidewalls and a bottom of the opening 20 .
  • the gate insulation layer 30 a may be conformally formed on surfaces of the first and second active fins 12 and 14 .
  • the gate electrode 30 b may be formed on the gate insulation layer 30 a , and may fill a lower portion of the opening 20 . That is, the gate insulation layer 30 a may surround sidewalls and a bottom of the gate electrode 30 b .
  • the capping pattern 30 c may be formed on the gate electrode 30 b , and may fill an upper portion of the opening 20 .
  • one of gate structures 30 may extend across at least one of the first active fins 12 and at least one of the second active fins 14 .
  • the gate structure 30 may cross the straight line extension portion 12 a of the first active fin 12 and the second active fin 14 . That is, the gate structure 30 may not cross the bent portion 12 b of the first active fin 12 .
  • the gate structure 30 may include a first end and a second end in the second direction. A portion of the gate structure 30 adjacent to one of the first and second ends may extend across the straight line extension portion 12 a of the first active fin 12 .
  • the first active fin 12 may have a wavy shape so that a first distance d 1 between one of the first and second ends of the gate structure 30 and the first active fin 12 in the second direction may increase, when compared to that between the one of the first and second ends and a first active fin having a straight line shape.
  • the bent portions 12 b contacting the straight line extension portion 12 a crossing the gate structure 30 may be bent to increase the first distance d 1 in the second direction between the one of the first and second end portions of the gate structure 30 and the first active fin 12 .
  • one of the straight line extension portions 12 a of the first active fin 12 crossing the gate structure 30 may be closer to a central portion of the gate structure 30 in the second direction, when compared to other ones of the straight line extension portions 12 a of the first active fin 12 adjacent thereto in the first direction.
  • the gate structure 30 may be formed in the opening 20 in the first insulating interlayer 18 .
  • the opening 20 may be formed by forming a dummy gate including, e.g., polysilicon on the first and second active fins 12 and 14 and removing the dummy gate.
  • the lower portion of the opening 20 corresponding to the end portion of the gate structure 30 in the second direction may be isolated by the first insulating interlayer 18 and the first active fin 12 .
  • an internal space of the opening 20 may decrease.
  • a portion of the dummy gate may remain in the opening 20 . Even if the opening 20 is normally formed without the remaining portion of the dummy gate, forming a gate structure 30 including a metal in the opening 20 having a narrow space may not be easy.
  • the first active fin 12 may include the straight line extension portion 12 a and the bent portion 12 b , so that a length in the second direction of the opening 20 corresponding to an end portion of the gate structure 30 may increase. Removing the dummy gate for forming the opening 20 and forming the gate structure in the opening 20 may be more easily performed. Thus, failures of the transistor including the end portion of the gate structure 30 may decrease.
  • a first portion 40 adjacent to the first end of the gate structure 30 may cross the straight line extension portion 12 a of the first active fin 12 .
  • the first distance d 1 between the first end of the gate structure 30 and the first active fin 12 may increase.
  • a second portion 42 adjacent to the second end of the gate structure 30 may cross the second active fin 14 .
  • a second distance d 2 between the second end of the gate structure 30 and the second active fin 14 may be greater than the first distance d 1 .
  • the second portion 42 of the gate structure 30 may cross the second active fin 14 with no bent portion without an increase in failures of the transistor.
  • each of the first edge portion 40 adjacent to the first end of the gate structure 30 and the second edge portion 42 adjacent to the second end of the gate structure 30 may cross a respective straight line extension portion 12 a of a respective first active fin 12 .
  • the second active fins 14 may be formed between the first active fins 12 in the second direction.
  • each of the first distance d 1 between the first end of the gate structure 30 and the first active fin 12 and the second distance d 2 between the second end of the gate structure 30 and the first active fin 12 may increase.
  • the layout of elements in the semiconductor device may be applied to a layout of cells in an SRAM device.
  • FIG. 5 is a circuit diagram illustrating unit cells of an SRAM according to some embodiments of the inventive concepts.
  • FIG. 6 is a plan view illustrating a layout of cells of an SRAM according to some embodiments of the inventive concepts.
  • FIG. 7 is a cross-sectional view taken along line I-I′ in FIG. 6 according to some embodiments of the inventive concepts.
  • FIGS. 6 and 7 contact plugs and wiring are not shown, for convenience of explanation.
  • one unit cell in the layout may be mainly described.
  • the unit cells may be repeatedly arranged.
  • the unit cells may be symmetric with each other.
  • a unit cell in an SRAM may include a first active fin 112 , a second active fin 114 , a third active fin 116 , a fourth active fin 118 , a first gate structure 130 , a second gate structure 132 , a third gate structure 134 and a fourth gate structure 136 .
  • the first active fin 112 may be in a first row, and may extend in the first direction.
  • the second active fin 114 may be in a second row, and may extend in the first direction.
  • the second row may be spaced apart from the first row in the second direction.
  • a plurality of second active fins 114 may be aligned with each other in the second direction and spaced apart from each other in the first direction.
  • the third active fin 116 may be in a third row, and may extend in the first direction.
  • the third row may be spaced apart from the first and second rows in the second direction with the second row between the first and third rows.
  • a plurality of third active fins 116 may be aligned with each other in the second direction and spaced apart from each other in the first direction.
  • Adjacent ones of the second active fins 114 and the third active fins 116 may be arranged to be shifted without being aligned to each other in the first direction.
  • the fourth active fin 118 may be in a fourth row, and may extend in the first direction.
  • the fourth row may be spaced apart from the first to third rows in the second direction with the third row between the second row and the fourth row.
  • the second and third active fins 114 and 116 may be between the first active fin 112 and the fourth active fin 118 in the second direction.
  • the first active fin 112 may include first straight line extension portions 112 a and first bent portions 112 b with a respective first bent portion 112 b between adjacent ones of the first straight line extension portions 112 a .
  • the fourth active fin 118 may include fourth straight line extension portions 118 a and fourth bent portions 118 b with a respective fourth bent portion 118 b between adjacent ones of the fourth straight line extension portions 118 a .
  • the first and fourth active fins 112 and 118 may have shapes that are substantially the same as or similar to a shape of the first active fin 12 of FIG. 1 . In other words, the first and fourth active fins 112 and 118 may have wavy shapes.
  • the shapes of the first and fourth active fins 112 and 118 may be substantially the same as each other. In some embodiments, the shapes of the first and fourth active fins 112 and 118 may be different from each other, or may be symmetric with each other.
  • the second and third active fins 114 and 116 may have straight line shapes with no bent portions.
  • N-type transistors may be formed on the first and fourth active fins 112 and 118 and P-type transistors may be formed on the second and third active fins 114 and 116 .
  • the first, second, third and fourth gate structures 130 , 132 , 134 and 136 may extend in the second direction.
  • the first gate structure 130 may cross the first active fin 112 .
  • the first gate structure 130 on the first active fin 112 may serve as a gate of a first pass transistor P 1 .
  • a portion of the first gate structure 130 may cross one of the first straight line extension portions 112 a of the first active fin 112 .
  • the first straight line extension portion 112 a crossing the first gate structure 130 may be closer to a central portion of the first gate structure 130 in the second direction, when compared to an adjacent one of the first straight line extension portions 112 a in the first direction.
  • a first distance d 1 between an end of the first gate structure 130 and the first active fin 112 may increase. Accordingly, failures of the first pass transistor P 1 may decrease.
  • the second gate structure 132 may cross both of the first active fin 112 and the second active fin 114 .
  • the second gate structure 132 may serve as a common gate of a first pull-down transistor PD 1 and a first pull-up transistor PU 1 .
  • the second gate structure 132 on the first active fin 112 may serve as a gate of the first pull-down transistor PD 1 .
  • a first portion of the second gate structure 132 may cross one of the straight line extension portions 112 a of the first active fin 112 .
  • the first straight line extension portion 112 a crossing the second gate structure 132 may be closer to a central portion of the second gate structure 132 in the second direction, when compared to an adjacent one of the first straight line extension portions 112 a in the first direction.
  • a second distance d 2 between a first end of the second gate structure 132 and the first active fin 112 may increase. Accordingly, failures of the first pull-down transistor PD 1 may decrease.
  • the second gate structure 132 on the second active fin 114 may serve as a gate of the first pull-up transistor PU 1 .
  • a second portion of the second gate structure 132 may extend to the third active fin 116 .
  • a third distance d 3 between a second end of the second gate structure 132 and the second active fin 114 may be greater than the second distance d 2 .
  • the third gate structure 134 may cross the third active fin 116 and the fourth active fin 118 .
  • the third gate structure 134 may serve as a common gate of a second pull-down transistor PD 2 and a second pull-up transistor PU 2 .
  • the third gate structure 134 on the third active fin 116 may serve as a gate of the second pull-up transistor PU 2 .
  • a first portion of the third gate structure 134 may extend to the second active fin 114 .
  • a distance between a first end of the third gate structure 134 and the third active fin 116 may be a fourth distance d 4 .
  • the third gate structure 134 on the fourth active fin 118 may serve as a gate of the second pull-down transistor PD 2 .
  • a second portion of the third gate structure 134 may cross one of the straight line extension portions 118 a of the fourth active fin 118 .
  • the fourth straight line extension portion 118 a crossing the third gate structure 134 may be closer to a central portion of the third gate structure 134 in second direction, when compared to an adjacent one of the fourth straight line extension portions 118 a in the first direction.
  • a fifth distance d 5 between a second end adjacent to the second portion of the third gate structure 134 and the fourth active fin 118 may increase. Accordingly, failures of the second pull-down transistor PD 1 may decrease.
  • the fourth distance d 4 may be greater than the fifth distance d 5 .
  • the fourth gate structure 136 may cross the fourth active fin 118 .
  • the fourth gate structure 136 on the fourth active fin 118 may serve as a gate of a second pass transistor P 2 .
  • a portion of the fourth gate structure 136 may cross one of the fourth straight line extension portions 118 a of the fourth active fin 118 .
  • the fourth straight line extension portion 118 a crossing the fourth gate structure 136 may be closer to a central portion of the fourth gate structure 136 in the second direction, when compared to an adjacent one of the fourth straight line extension portions 118 a in the first direction.
  • a sixth distance d 6 between an end of the fourth gate structure 136 and the fourth active fin 118 may increase. Accordingly, failures of the second pass transistor P 2 may decrease.
  • the first, second, third and fourth gate structures 130 , 132 , 134 and 136 may be formed in the openings in the first insulating interlayer, respectively.
  • the first, second, third and fourth gate structures 130 , 132 , 134 and 136 may include a metal.
  • the first, second, third and fourth gate structures 130 , 132 , 134 and 136 may have stack structures substantially the same as or similar to a stack structure of the gate structure 30 illustrated with reference to FIGS. 1 to 4 .
  • Portions of the first, second, third and fourth active fins 112 , 114 , 116 and 118 between the first, second, third and fourth gate structures 130 , 132 , 134 and 136 may serve as impurity regions of the transistors.
  • a first recess may be formed on the first active fin 112 between the first and second gate structures 130 and 132 .
  • a second recess may be formed on the second active fin 114 between the second and third gate structures 132 and 134 .
  • a third recess may be formed on the third active fin 116 between the second and third gate structures 132 and 134 .
  • a fourth recess may be formed on the fourth active fin 118 between the third and fourth gate structures 134 and 136 .
  • a first epitaxial pattern 140 may fill the first recess.
  • the first epitaxial pattern 140 may protrude in the second direction from the first active fin 112 .
  • the first epitaxial pattern 140 may serve as an impurity region of an N-type transistor.
  • the first epitaxial pattern 140 may include silicon.
  • the first epitaxial pattern 140 may include n-type impurities.
  • a second epitaxial pattern 142 may fill the second recess.
  • the second epitaxial pattern 142 may protrude in the second direction from the second active fin 114 .
  • the second epitaxial pattern 142 may serve as an impurity region of a P-type transistor.
  • the second epitaxial pattern 142 may include silicon germanium.
  • the second epitaxial pattern 142 may include p-type impurities.
  • a third epitaxial pattern 144 may fill the third recess.
  • the third epitaxial pattern 144 may protrude in the second direction from the third active fin 116 .
  • the third epitaxial pattern 144 may serve as an impurity region of a P-type transistor.
  • the third epitaxial pattern 144 may include silicon germanium.
  • the third epitaxial pattern 144 may include p-type impurities.
  • a fourth epitaxial pattern 146 may fill the fourth recess.
  • the fourth epitaxial pattern 146 may protrude in the second direction from the fourth active fin 118 .
  • the fourth epitaxial pattern 146 may serve as an impurity region of an N-type transistor.
  • the fourth epitaxial pattern 146 may include silicon.
  • the fourth epitaxial pattern 146 may include n-type impurities.
  • the first gate structure 130 of the first pass transistor P 1 and the second gate structure 132 of the first pull-down transistor PD 1 may cross the first active fin 112 having the wavy shape, so that the first and second distances d 1 and d 2 may increase.
  • the third gate structure 134 of the second pull-down transistor PD 2 and the fourth gate structure 136 of the second pass transistor P 2 may cross the fourth active fin 118 having the wavy shape, so that the fifth and sixth distances d 5 and d 6 may increase.
  • failures of the first pass transistor, the first pull-down transistor, the second pull-down transistor and the second pass transistor formed on the first and fourth active fins 112 and 118 may decrease.
  • FIG. 8 is a plan view illustrating a layout of a semiconductor device according to some embodiments of the inventive concepts.
  • the semiconductor device of FIG. 8 may be substantially the same as or similar to the semiconductor device of FIG. 1 , except for the shapes of second active fins.
  • a plurality of first active fins 12 and a plurality of second active fins 15 may protrude upwardly from an upper surface of the substrate 10 .
  • the gate structure 30 may be formed on the first and second active fins 12 and 15 , may extend across the first and second active fins 12 and 15 .
  • the first active fin 12 may be substantially the same as or similar to that illustrated with reference to FIG. 1 . That is, the first active fin 12 may include the first straight line extension portion 12 a and the first bent portion 12 b , and may have a wavy shape.
  • the second active fin 15 may include second straight line extension portions 15 a and a second bent portion 15 b therebetween. In some embodiments, a plurality of second active fins 15 may be spaced apart from each other in the first direction.
  • the second active fin 15 may extend in the first direction without being cut in the middle thereof.
  • each of the gate structures 30 may extend in the first direction.
  • each of the gate structures 30 may cross both of at least one of the first active fins 12 and at least one of the second active fins 15 .
  • two parallel gate structures 30 may be formed on one of the second active fins 15 .
  • two transistors may be formed on one of the second active fin 15 .
  • a portion 40 adjacent to at least one end of the gate structure 30 may cross the first straight line extension portion 12 a of the first active fin 12 .
  • One of the first straight line extension portions 12 a crossing the gate structure 30 may be closer to a central portion of the gate structure 30 in the second direction, when compared to another one of the straight line extension portions 12 a adjacent thereto in the first direction. Thus, failures of the gate structure 30 may decrease.
  • the gate structure 30 may cross the second bent portion 15 b of the second active fin 15 . That is, the second bent portion 15 b may be overlapped with a lower surface of the gate structure 30 .
  • a bending direction of the second bent portion 15 b may be the same as or similar to that of a bending direction of one of the first bent portions 12 b corresponding thereto in the second direction.
  • a first impurity region 60 may be formed at the first active fin 12 between the first gate structures 30 .
  • the first impurity region 60 may be formed at the first straight line extension portion 12 a between the first bent portions 12 b .
  • a second impurity region 62 may be formed at the second active fin 15 between the gate structures 30 . That is, the second impurity region 62 may be formed at the second straight line extension portion 15 a between the second bent portions 15 b.
  • the second active fin 15 includes the second bent portion 15 b , a distance d in the second direction between the first and second impurity regions 60 and 62 may increase. Thus, failures due to a small distance between the first and second impurity regions 60 and 62 may decrease.
  • the layout of elements in the semiconductor device may be applied to a layout of cells in an SRAM device.
  • FIG. 9 is a plan view illustrating a layout of cells of an SRAM according to some embodiments of the inventive concepts.
  • the unit cell in the SRAM may include the first active fin 112 , the second active fin 115 , the third active fin 117 , the fourth active fin 118 , the first gate structure 130 , the second gate structure 132 , the third gate structure 134 and the fourth gate structure 136 .
  • the first active fin 112 in a first row may be substantially the same as or similar to that illustrated with reference to FIG. 6 .
  • the fourth active fin 118 in a fourth row may be substantially the same as or similar to that illustrated with reference to FIG. 6 .
  • Each of the first and fourth active fins 112 and 118 may have a wavy shape.
  • the second active fin 115 in a second row may include second straight line extension portions 115 a and a second bent portion 115 b between the second straight line extension portions 115 a .
  • a plurality of second active fins 115 may be arranged in the first direction to be spaced apart from each other.
  • the third active fin 117 in a third row may include third straight line extension portions 117 a and a third bent portion 117 b between the second straight line extension portions 117 a .
  • a plurality of third active fins 117 may be arranged in the first direction to be spaced apart from each other.
  • the second and the third active fins 115 and 117 may be shifted without being aligned to each other in the second direction.
  • the first, second, third and fourth gate structures 130 , 132 , 134 and 136 may extend in the second direction.
  • functions of the first, second, third and fourth gate structures 130 , 132 , 134 and 136 may be substantially the same as or similar to functions of the first, second, third and fourth gate structures illustrated with reference to FIG. 6 , respectively.
  • the first and fourth gate structures 130 and 136 may have a layout substantially the same as or similar to that of the first and fourth gate structures illustrated with reference to FIG. 6 , respectively.
  • the first portion of the second gate structure 132 may cross the first straight line extension portion 112 a of the first active fin 112 .
  • One of the first straight line extension portions 112 a crossing the second gate structure 132 may be closer to a center portion of the second gate structure 132 in the second direction, when compared to another one of the first straight line extension portions 112 a in the first direction.
  • the second gate structure 132 may cross the second bent portion 115 b of the second active fin 115 .
  • the second portion of the second gate structure 132 may extend to the third active fin 117 .
  • a bending direction of the second bent portion 115 b may be the same as or similar to a bending direction of the first bent portion 112 b corresponding to the second bent portion 115 b in the second direction.
  • the third gate structure 134 may cross the third bent portion 117 b of the third active fin 117 .
  • the first portion of the third gate structure 134 may extend to the second active fin 115 .
  • the second portion of the third gate structure 134 may cross the fourth straight line extension portion 118 a of the fourth active fin 118 .
  • One of the fourth straight line extension portions 118 a crossing the third gate structure 134 may be closer to a center portion of the third gate structure 134 in the second direction, when compared to another one of the fourth straight line extension portions 118 a in the first direction.
  • a bending direction of the third bent portion 117 b may be the same as or similar to a bending direction of the fourth bent portion 118 b corresponding to the third bent portion 117 b in the second direction.
  • Each of the first, second, third and fourth active fins 112 , 115 , 117 and 118 between the first, second, third and fourth gate structures 130 , 132 , 134 and 136 may serve as an impurity region of one of the transistors.
  • the first, second, third and fourth active fins 112 , 115 , 117 and 118 may include recesses, respectively.
  • the first, second, third and fourth epitaxial patterns doped with impurities may be formed in the recesses, respectively.
  • first and fourth active fins 112 and 118 may have wavy shapes, failures of the gate structures 130 and 136 formed on the first and fourth active fins 112 and 118 may decrease.
  • second and third active fins 115 and 117 may have wavy shapes, a distance in the second direction d between the impurity regions may increase.
  • FIG. 10 is a plan view illustrating a layout of cells of an SRAM according to some embodiments of the inventive concepts.
  • FIG. 11 is a cross-sectional view taken along line II-II′ in FIG. 10 according to some embodiments of the inventive concepts.
  • FIG. 10 contact plugs are shown, while the contact plugs are not shown in FIG. 11 .
  • the unit cell in the SRAM may be substantially the same as or similar to the unit cell in the SRAM illustrated with reference to FIG. 9 , except for the shapes of first, second, third and fourth active fins.
  • a unit cell in the SRAM may include a first active fin 122 , a second active fin 124 , a third active fin 126 , a fourth active fin 128 , the first gate structure 130 , the second gate structure 132 , the third gate structure 134 and the fourth gate structure 136 .
  • the first active fin 122 in a first row may extend in the first direction with no bent portion.
  • the second active fin 124 in a second row may include second straight line extension portions 124 a and a second bent portion 124 b between the second straight line extension portions 124 a .
  • the third active fin 126 in a third row may include third straight line extension portions 126 a and a third bent portion 126 b between the second straight line extension portions 126 a .
  • the second and third active fins 124 and 126 may be substantially the same as or similar to the second and third active fins 115 and 117 , respectively, illustrated with reference to FIG. 9 .
  • the fourth active fin 128 in a fourth row may extend in the first direction with no bent portion.
  • the first, second third and fourth gate structures 130 , 132 , 134 and 136 may extend in the second direction. Functions and arrangements of the first, second third and fourth gate structures 130 , 132 , 134 and 136 may be substantially the same as or similar to functions and arrangements of those illustrated with reference to FIG. 6 .
  • Two second gate structures 132 may be formed on one of the second active fins 124 .
  • a first portion of the second gate structure 132 may cross the second bent portion 124 b of the second active fin 124 .
  • the second bent portion 124 b may be bent so that a distance in the second direction from the second active fin 124 between the two the second gate structures 132 to the first active fin 122 may increase.
  • the third gate structure 134 may cross the third bent portion 126 b of the third active fin 126 .
  • Two third gate structures 134 may be formed on the one of third active fins 126 .
  • the third bent portion 126 b may be bent so that an eighth distance d 8 in the second direction from the third active fin 126 between the two the third gate structure 134 to the fourth active fin 128 may increase.
  • Each of the first, second, third and fourth active fins 122 , 124 , 126 and 128 between the first, second, third and fourth gate structures 130 , 132 , 134 and 136 may serve as an impurity region of one of the transistors.
  • the first, second, third and fourth active fins 122 , 124 , 126 and 128 may include recesses, respectively.
  • the first, second, third and fourth epitaxial patterns 140 , 142 , 144 and 146 (refer to FIG. 7 ) may fill the recesses, respectively.
  • the first and fourth epitaxial patterns 140 and 146 may include silicon, and may be doped with N-type impurities.
  • the second and third epitaxial patterns 142 and 144 may include silicon germanium, and may be doped with P-type impurities.
  • the first, second, third and fourth epitaxial patterns 140 , 142 , 144 and 146 may protrude in the second direction from the first, second, third and fourth active fins 122 , 124 , 126 and 128 , respectively.
  • the second epitaxial pattern 142 may be formed on the second active fin 124 between two second gate structures 132 .
  • the first epitaxial pattern 140 may be formed on the first active fin 122 between two second gate structures 132 .
  • a first contact plug 150 and a second contact plug 152 may be formed on the first and second epitaxial patterns 140 and 142 , respectively.
  • the first and second contact plugs 150 and 152 may not be electrically short.
  • the first epitaxial pattern 140 may be formed by a first selectively epitaxial growth process, so that the first epitaxial pattern 140 may protrude in the second direction from the first active fin 122 , as shown in FIG. 11 .
  • the second epitaxial pattern 142 may be formed by a second selectively epitaxial growth process, so that the second epitaxial pattern 142 may protrude in the second direction from the second active fin 124 , as shown in FIG. 11 .
  • a distance between the first and second epitaxial patterns 140 and 142 decreases, an electrical short between the first and second epitaxial patterns 140 and 142 may occur.
  • the second active fin 124 may have a wavy shape, so a seventh distance d 7 between first and second active fins 122 and 124 , which may be formed between the second gate structures 132 , may increase. Thus, the electrical short between the first and second epitaxial patterns 140 and 142 may decrease.
  • two the third gate structures 134 may cross one of the third active fins 126 .
  • the third epitaxial pattern 144 (refer to FIG. 7 ) may be formed on the third active fin 126 between two the third gate structures 134 .
  • the fourth epitaxial pattern 146 (refer to FIG. 7 ) may be formed on the fourth active fin 128 between two the third gate structures 134 .
  • a third contact plug 154 and a fourth contact plug 156 may be formed on the third and fourth epitaxial patterns 144 and 146 , respectively.
  • the third active fin 126 may have a wavy shape, so the eighth distance d 8 in the second direction between third and fourth active fins 126 and 128 may increase. Thus, the electrical short between the third and fourth epitaxial patterns 144 and 146 may decrease.
  • the second epitaxial pattern 142 may be formed at an end portion in the first direction of one of the second active fins 124 .
  • the second epitaxial pattern 142 may be electrically connected to one of the first epitaxial patterns 140 corresponding thereto in the second direction via a fifth contact plug 158 .
  • the second epitaxial pattern 142 may be electrically connected to a neighboring one of the third gate structures 134 via a sixth contact plug 160 .
  • the third epitaxial pattern 144 may be formed at an end portion in the first direction of one of the third active fins 126 .
  • the third epitaxial pattern 144 may be electrically connected to one of the fourth epitaxial patterns 146 corresponding thereto in the second direction via a seventh contact plug 162 .
  • the third epitaxial pattern 144 may be electrically connected to a neighboring one of the second gate structures 132 via an eighth contact plug 164 .
  • a ninth contact structure 166 may be formed on the first epitaxial pattern 140 between the first gate structures 130 .
  • a tenth contact structure 168 may be formed on the fourth epitaxial pattern 146 between the fourth gate structures 136 .
  • the second and the third active fins 124 and 126 may have the wavy shapes, so that an electrical short between the epitaxial patterns may decrease.
  • FIG. 12 is a plan view illustrating a layout of cells of an SRAM according to some embodiments of the inventive concepts.
  • the unit cell in the SRAM may be substantially the same as or similar to the unit cell in the SRAM illustrated with reference to FIG. 6 , except for the shapes of the first, second, third and fourth active fins.
  • a unit cell in the SRAM may include a first active fin 123 , a second active fin 125 , a third active fin 127 , a fourth active fin 129 , the first gate structure 130 , the second gate structure 132 , the third gate structure 134 and the fourth gate structure 136 .
  • the first active fin 123 in a first row may include first straight line extension portions 123 a and a first bent portion 123 b between the first straight line extension portions 123 a.
  • the second and third active fins 125 and 127 may be in a second row and a third row, respectively.
  • the second and third active fins 125 and 127 may be substantially the same as or similar to the second and third active fins 114 , 116 , respectively, illustrated with reference to FIG. 6 .
  • the fourth active fin 129 in a fourth row may include fourth straight line extension portions 129 a and a fourth bent portion 129 b between the fourth straight line extension portions 129 a.
  • the first, second, third and fourth gate structures 130 , 132 , 134 and 136 may extend in the second direction. Functions of the first, second third and fourth gate structures 130 , 132 , 134 and 136 may be substantially the same as or similar to functions of those illustrated with reference to FIG. 6 .
  • the first gate structure 130 may extend across the first straight line portion 123 a of the first active fin 123 .
  • the impurity region may be formed at the first straight line portion 123 a of the first active fin 123 between the first gate structures 130 .
  • the second gate structure 132 may extend across the first and second active fins 123 and 125 .
  • the second gate structure 132 may cross the first bent portion 123 b of the first active fin 123 . That is, the second gate structure 132 may be overlapped with the first bent portion 123 b .
  • the first bent portion 132 b may be bent in a direction to increase the distance between the neighboring first and second active fins 123 and 125 .
  • the impurity region may be formed at the first straight line portion 123 a of the first active fin 123 between the second gate structures 132 .
  • the third gate structure 134 may extend across the third and fourth active fins 127 and 129 .
  • the third gate structure 134 may cross the fourth bent portion 129 b of the fourth active fin 129 .
  • the fourth bent portion 129 b may be bent in a direction to increase the distance between the neighboring third and fourth active fins 127 and 129 .
  • the impurity region may be formed at the fourth straight line extension portion 129 a of the fourth active fin 129 between the third gate structures 134 .
  • the fourth gate structure 136 may extend across the fourth straight line extension portion 129 a of the fourth active fins 129 .
  • the impurity region may be formed at the fourth straight line portion 129 a of the fourth active fin 129 between the fourth gate structures 136 .
  • the first, second, third and fourth epitaxial patterns 140 , 142 , 144 and 146 may be formed at the first, second, third and fourth active fins 123 , 125 , 127 and 129 between the gate structures 130 , 132 134 and 136 , respectively.
  • the first, second, third, fourth, fifth, sixth, seventh, eighth, ninth, tenth contact plugs 150 , 152 , 154 , 156 , 158 , 160 , 162 , 164 , 166 and 168 may be formed.
  • the first active fin 123 may have a wavy shape, so that the seventh distance d 7 in the second direction between the first and second active fins 123 and 125 formed between the second gate structures 132 may increase.
  • an electrical short between the first and second epitaxial patterns 140 and 142 may decrease.
  • the fourth active fin 129 may have a wavy shape, so that the eighth distance d 8 in the second direction between the third and fourth active fins 127 and 129 formed between the third gate structures 134 may increase.
  • an electrical short between the third and fourth epitaxial patterns 144 and 146 may decrease.
  • FIG. 13 is a plan view illustrating a layout of cells of an SRAM according to some embodiments of the inventive concepts.
  • a unit cell in the SRAM may include the first active fin 123 , the second active fin 124 , the third active fin 126 , the fourth active fin 129 , the first gate structure 130 , the second gate structure 132 , the third gate structure 134 and the fourth gate structure 136 .
  • the first active fin 123 in a first row may include the first straight line extension portions 123 a and the first bent portion 123 b between the first straight line extension portions 123 a .
  • the first active fin 123 may be substantially the same as or similar to that illustrated with reference to FIG. 12 .
  • the second active fin 124 in a second row may include the second straight line extension portions 124 a and the second bent portion 124 b between the second straight line extension portions 124 a .
  • the third active fin 126 in a third row may include the third straight line extension portions 126 a and the third bent portion 126 b between the third straight line extension portions 126 a .
  • the second and third active fins 124 and 126 may be substantially the same as or similar to those illustrated with reference to FIG. 10 .
  • the fourth active fin 129 in a fourth row may include the fourth straight line extension portions 129 a and the fourth bent portion 129 b between the fourth straight line extension portions 129 a .
  • the fourth active fin 129 may be substantially the same as or similar to that illustrated with reference to FIG. 12 .
  • functions of the first, second, third and fourth gate structures 130 , 132 , 134 and 136 may be substantially the same as or similar to functions of those illustrated with reference to FIG. 6 , respectively.
  • the first gate structure 130 may extend across the first straight line extension portion 123 a of the first active fin 123 .
  • the first gate structure 130 may be substantially the same as or similar to that illustrated with reference to FIG. 12 .
  • the second gate structure 132 may extend across the first bent portion 123 b of the first active fin 123 and the second bent portion 124 b of the second active fin 124 . That is, the second gate structure 132 may be overlapped with the first bent portion 123 b and the second bent portion 124 b .
  • Each of the first and second bent portions 123 b and 124 b may be bent in a direction to increase the distance between the neighboring first and second active fins 123 and 124 . As shown in FIG. 13 , the first and second bent portions 123 b and 124 b may be symmetric with respect to the first direction.
  • the third gate structure 134 may extend across the third bent portion 126 b of the third active fin 126 and the fourth bent portion 129 b of the fourth active fin 129 . That is, the third gate structure 134 may be overlapped with the third bent portion 126 b and the fourth bent portion 129 b .
  • Each of the third and fourth bent portions 126 b and 129 b may be bent in a direction to increase the distance between the neighboring third and fourth active fins 126 and 129 . As shown in FIG. 13 , the third and fourth bent portions 126 b and 129 b may be symmetric with respect to the first direction.
  • the fourth gate structure 136 may extend across the fourth straight line extension portion 129 a of the fourth active fin 129 .
  • the fourth gate structure 136 may be substantially the same as or similar to that illustrated with reference to FIG. 12 .
  • the first, second, third and fourth epitaxial patterns may be formed at the first, second, third and fourth active fins 123 , 124 , 126 and 129 between the gate structures 130 , 132 , 134 and 136 , respectively.
  • the first, second, third, fourth, fifth, sixth, seventh, eighth, ninth, tenth contact plugs 150 , 152 , 154 , 156 , 158 , 160 , 162 , 164 , 166 and 168 may be formed.
  • each of the first and second active fins 123 and 124 may have a wavy shape, so that the seventh distance d 7 in a second direction between the first and second active fins 123 and 124 formed between the second gate structures 132 may increase.
  • Each of the third and fourth active fins 126 and 129 may have a wavy shape, so that the eighth distance d 8 in the second direction between the third and fourth active fins 126 and 129 formed between the third gate structures 134 may increase.
  • FIG. 14 is a plan view illustrating a layout of cells of an SRAM according to some embodiments of the inventive concepts.
  • a unit cell in the SRAM may be substantially the same as or similar to the unit cell in the SRAM illustrated with reference to FIG. 10 , except for the shapes of the second and third active fins.
  • a unit cell in the SRAM may include the first active fin 122 , a second active fin 172 , a third active fin 174 , the fourth active fin 128 , the first gate structure 130 , the second gate structure 132 , the third gate structure 134 and the fourth gate structure 136 .
  • the second active fin 172 in a second row may include second straight line extension portions 172 a and a second bent portion 172 b between the second straight line extension portions 172 a .
  • the second straight line extension portion 172 a may extend in the second direction.
  • Two connected second bent portions 172 b may be formed between the second straight line extension portions 172 a .
  • Each of the second bent portions 172 b may extend in an oblique direction with respect to the first direction.
  • one of the second active fins 172 may include two second straight line extension portions 172 a and two adjacent second bent portions 172 b between the two the second straight line extension portions 172 a .
  • the two adjacent second bent portions 172 b may be bent in a direction to be symmetric with each other, and each of the second bent portions 172 b may contact an end of a respective second straight line extension portion 172 a .
  • a contact portion between the two adjacent second bent portions 172 b may have a shape of a cusp. In other words, the contact portion between the two adjacent second bent portions 172 b may be a pointed portion.
  • the contact portion of the second bent portions 172 b may be between the second gate structures 132 .
  • Each of the second bent portions 172 b may be bent to increase the distance between the neighboring first and second active fins 122 and 172 .
  • the second gate structure 172 b may cross the second bent portion 172 .
  • the third active fin 174 in a third row may include third straight line extension portions 174 a and a third bent portion 174 b between the third straight line extension portions 174 a .
  • a contact portion having a cusp shape of the third bent portions 174 b may be between the third gate structures 134 .
  • the third active fin 174 may have a shape substantially the same as or similar to a shape of the second active fin 172 .
  • Each of the third bent portions 174 b may be bent to increase the distance between the neighboring third and fourth active fins 174 and 128 .
  • the third gate structure 134 may cross the third bent portion 174 b.
  • the second and third active fins 172 and 174 may have the second bent portion 172 b and the third bent portion 174 b , respectively.
  • an electrical short between the epitaxial patterns may decrease.
  • FIG. 15 is a plan view illustrating a layout of cells of an SRAM according to some embodiments of the inventive concepts.
  • a unit cell in the SRAM may be substantially the same as or similar to the unit cell in the SRAM illustrated with reference to FIG. 12 , except for the shapes of the first and fourth active fins.
  • a unit cell in the SRAM may include a first active fin 170 , the second active fin 125 , the third active fin 127 , a fourth active fin 176 , the first gate structure 130 , the second gate structure 132 , the third gate structure 134 and the fourth gate structure 136 .
  • the first active fin 170 in a first row may extend in the first direction, and may include first straight line extension portions 170 a and a first bent portion 170 b .
  • ends of two the first bent portions 170 b may contact each other.
  • a contact portion between the two the first bent portions 170 b may have a shape of a cusp.
  • the contact portion of the first bent portions 170 b may be between the second gate structures 132 .
  • the first bent portion 170 b may be bent in a direction to increase the distance between the neighboring first and second active fins 170 and 125 .
  • the second gate structure 132 may cross the first bent portion 170 b.
  • the fourth active fin 176 in a fourth row may extend in the first direction, and may include fourth straight line extension portions 176 a and a fourth bent portion 176 b .
  • the fourth active fin 176 may have a shape substantially the same as or similar to a shape of the first active fin 170 .
  • the fourth bent portion 176 b may be bent in a direction to increase the distance between the neighboring third and fourth active fins 127 and 176 .
  • the third gate structure 134 may cross the fourth bent portion 176 b.
  • the first and fourth active fins 170 and 176 may have the first bent portion 170 b and the fourth bent portion 176 b , respectively. Thus, an electrical short between the epitaxial patterns may decrease.
  • FIG. 16 is a plan view illustrating a layout of cells of an SRAM according to some embodiments of the inventive concepts.
  • a unit cell in the SRAM may include the first active fin 170 , the second active fin 172 , the third active fin 174 , the fourth active fin 176 , the first gate structure 130 , the second gate structure 132 , the third gate structure 134 and the fourth gate structure 136 .
  • the first active fin 170 in a first row and the fourth active fin 176 in a fourth row may be substantially the same as or similar to those illustrated with reference to FIG. 15 .
  • the second active fin 172 in a second row and the third active fin 174 in a third row may be substantially the same as or similar to those illustrated with reference to FIG. 14 .
  • the first, second, third and fourth active fins 170 , 172 , 174 and 176 may have the first, second, third and fourth bent portions 170 b , 172 b , 174 b and 176 b , respectively.
  • an electrical short between the epitaxial patterns may decrease.
  • FIG. 17 is a plan view illustrating a layout of cells of the SRAM according to some embodiments of the inventive concepts.
  • a unit cell in the SRAM may include a first active fin 180 , the second active fin 125 , the third active fin 127 , a fourth active fin 182 , the first gate structure 130 , the second gate structure 132 , the third gate structure 134 and the fourth gate structure 136 .
  • the first active fin 180 in a first row and the fourth active fin 182 in a fourth row may extend in the first direction.
  • the second active fin 125 in a second row and the third active fin 127 in a third row may be substantially the same as or similar to those illustrated with reference to FIG. 6 , respectively. That is, each of the first, second, third and fourth active fins 180 , 125 , 127 and 182 may have a straight line shape with no bent portions.
  • the first gate structure 190 may cross the first active fin 180 .
  • the first gate structure 190 may include first extension portions 190 a extending in the second direction and a first bent portion 190 b between the first extension portions 190 a .
  • the first bent portion 190 b may be bent in an oblique direction with respect to the second direction.
  • the first extension portion 190 a may be perpendicular to the first active fin 180 , and the first bent portion 190 b may be overlapped with an isolation region between first active fins 180 .
  • the second gate structure 192 may cross both of the first and second active fins 180 and 125 .
  • the second gate structure 192 may extend to the third active fin 127 .
  • the second gate structure 192 may include second extension portions 192 a extending in the second direction and a second bent portion 192 b between the second extension portions 192 a.
  • the second extension portion 192 a may be perpendicular to each of the first active fin 180 and the second active fin 125 .
  • the second bent portion 192 b may be overlapped with an isolation region between first and second active fins 180 and 125 .
  • the third gate structure 194 may cross both of the third and fourth active fins 127 and 182 .
  • the third gate structure 194 may extend to the second active fin 125 .
  • the third gate structure 194 may include third extension portions 194 a extending in the second direction and a third bent portion 194 b between the third extension portions 194 a .
  • the third bent portion 194 b may be bent in an oblique direction with respect to the second direction.
  • the third extension portion 194 a may be perpendicular to the third active fin 127 and the fourth active fin 182 .
  • the third bent portion 194 b may be overlapped with an isolation region between third and fourth active fins 127 and 182 .
  • the fourth gate structure 196 may cross the fourth active fin 182 .
  • the fourth gate structure 196 may include fourth extension portions 196 a extending in the second direction and a fourth bent portion 196 b between the fourth extension portions 196 a .
  • the fourth bent portion 196 b may be bent in an oblique direction with respect to the second direction.
  • the fourth extension portion 196 a may be vertically overlapped with the fourth active fin 182
  • the fourth bent portion 196 b may be overlapped with an isolation region between fourth active fins 182 .
  • Recesses may be formed on the first, second, third and fourth active fins 180 , 125 , 127 and 182 between the first to fourth gate structures 190 , 192 , 194 and 196 .
  • the first, second, third and fourth epitaxial patterns may fill the recesses, respectively.
  • First and second portions of the first and second active fins 180 and 125 , respectively, between the second gate structures 192 may be shifted in respect to each other in the first direction.
  • a length in the oblique direction between the first and second portions may increase.
  • an electrical short between the first and second epitaxial patterns in the first and second portions may decrease.
  • Third and fourth portions of the third and fourth active fins 127 and 182 , respectively, between the third gate structures 194 may be shifted in respect to each other in the first direction.
  • a length in the oblique direction between the third and fourth portions may increase.
  • an electrical short between the third and fourth epitaxial patterns in the third and fourth portions may decrease.

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  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
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  • Wire Bonding (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
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US20210119036A1 (en) 2021-04-22
CN109494221A (zh) 2019-03-19
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US11784255B2 (en) 2023-10-10
KR102494918B1 (ko) 2023-02-02

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