US20160291172A1 - Radiation detecting device, radiation detecting system, and method for manufacturing the radiation detecting device - Google Patents

Radiation detecting device, radiation detecting system, and method for manufacturing the radiation detecting device Download PDF

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Publication number
US20160291172A1
US20160291172A1 US15/103,247 US201415103247A US2016291172A1 US 20160291172 A1 US20160291172 A1 US 20160291172A1 US 201415103247 A US201415103247 A US 201415103247A US 2016291172 A1 US2016291172 A1 US 2016291172A1
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United States
Prior art keywords
sensor substrates
radiation detecting
adhesive member
detecting device
sensor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
US15/103,247
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English (en)
Inventor
Shinji Ono
Takamasa Ishii
Kota Nishibe
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Canon Inc
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Canon Inc
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Filing date
Publication date
Application filed by Canon Inc filed Critical Canon Inc
Assigned to CANON KABUSHIKI KAISHA reassignment CANON KABUSHIKI KAISHA ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). Assignors: NISHIBE, KOTA, ISHII, TAKAMASA, ONO, SHINJI
Publication of US20160291172A1 publication Critical patent/US20160291172A1/en
Abandoned legal-status Critical Current

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    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01T—MEASUREMENT OF NUCLEAR OR X-RADIATION
    • G01T1/00—Measuring X-radiation, gamma radiation, corpuscular radiation, or cosmic radiation
    • G01T1/16—Measuring radiation intensity
    • G01T1/20—Measuring radiation intensity with scintillation detectors
    • G01T1/2018—Scintillation-photodiode combinations
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01T—MEASUREMENT OF NUCLEAR OR X-RADIATION
    • G01T1/00—Measuring X-radiation, gamma radiation, corpuscular radiation, or cosmic radiation
    • G01T1/16—Measuring radiation intensity
    • G01T1/20—Measuring radiation intensity with scintillation detectors
    • G01T1/2006—Measuring radiation intensity with scintillation detectors using a combination of a scintillator and photodetector which measures the means radiation intensity
    • A—HUMAN NECESSITIES
    • A61—MEDICAL OR VETERINARY SCIENCE; HYGIENE
    • A61B—DIAGNOSIS; SURGERY; IDENTIFICATION
    • A61B6/00—Apparatus or devices for radiation diagnosis; Apparatus or devices for radiation diagnosis combined with radiation therapy equipment
    • A61B6/46—Arrangements for interfacing with the operator or the patient
    • A61B6/461—Displaying means of special interest
    • A—HUMAN NECESSITIES
    • A61—MEDICAL OR VETERINARY SCIENCE; HYGIENE
    • A61B—DIAGNOSIS; SURGERY; IDENTIFICATION
    • A61B6/00—Apparatus or devices for radiation diagnosis; Apparatus or devices for radiation diagnosis combined with radiation therapy equipment
    • A61B6/48—Diagnostic techniques
    • A61B6/486—Diagnostic techniques involving generating temporal series of image data
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01T—MEASUREMENT OF NUCLEAR OR X-RADIATION
    • G01T1/00—Measuring X-radiation, gamma radiation, corpuscular radiation, or cosmic radiation
    • G01T1/16—Measuring radiation intensity
    • G01T1/20—Measuring radiation intensity with scintillation detectors
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01T—MEASUREMENT OF NUCLEAR OR X-RADIATION
    • G01T1/00—Measuring X-radiation, gamma radiation, corpuscular radiation, or cosmic radiation
    • G01T1/16—Measuring radiation intensity
    • G01T1/20—Measuring radiation intensity with scintillation detectors
    • G01T1/2002—Optical details, e.g. reflecting or diffusing layers
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01T—MEASUREMENT OF NUCLEAR OR X-RADIATION
    • G01T1/00—Measuring X-radiation, gamma radiation, corpuscular radiation, or cosmic radiation
    • G01T1/16—Measuring radiation intensity
    • G01T1/20—Measuring radiation intensity with scintillation detectors
    • G01T1/2018—Scintillation-photodiode combinations
    • G01T1/20185—Coupling means between the photodiode and the scintillator, e.g. optical couplings using adhesives with wavelength-shifting fibres
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H10F30/29—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to radiation having very short wavelengths, e.g. X-rays, gamma-rays or corpuscular radiation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
    • H10F39/189—X-ray, gamma-ray or corpuscular radiation imagers
    • H10F39/1898—Indirect radiation image sensors, e.g. using luminescent members

Definitions

  • the present invention relates to a radiation detecting device that detects radiation, a radiation detecting system that uses the radiation detecting device, and a method for manufacturing the radiation detecting device.
  • a so-called indirect conversion radiation detecting device including a sensor substrate where a plurality of photoelectric converting elements are arranged in an array, and a scintillator that converts radiation into light that is detectable by the photoelectric converting elements may be used.
  • PTL 1 discloses a radiation detecting device in which a plurality of sensor substrates are disposed adjacent to each other and a scintillator is disposed so as to extend over the plurality of sensor substrates.
  • PTL 1 discloses a radiation detecting device in which the plurality of sensor substrates and the scintillator are adhered to each other by an adhesive member.
  • the present invention provides a radiation detecting device in which defective adhesion between an adhesive member and end portions of a plurality of sensor substrates is reduced.
  • a radiation detecting device includes a plurality of sensor substrates disposed adjacent to each other, each sensor substrate including a first surface where a plurality of photoelectric converting elements are arranged in an array, a second surface that opposes the first surface, and a side surface that connects the first surface and the second surface to each other; a scintillator disposed at a side of the first surfaces of the plurality of sensor substrates; and a sheet-like adhesive member for adhering the plurality of sensor substrates and the scintillator to each other, wherein, between the plurality of sensor substrates, the sheet-like adhesive member adheres to the first surfaces and at least portions of the side surfaces such that the sheet-like adhesive member extends and continuously adheres from the first surfaces to the at least portions of the side surfaces.
  • a method for manufacturing a radiation detecting device includes a disposing step of disposing a scintillator at a side of first surfaces of a plurality of sensor substrates with a sheet-like adhesive member interposed therebetween, the plurality of sensor substrates being disposed adjacent to each other, each sensor substrate including the first surface where a plurality of photoelectric converting elements are arranged in an array, a second surface that opposes the first surface, and a side surface that connects the first surface and the second surface to each other; and
  • FIG. 1 is a schematic plan view, a schematic sectional view, and an enlarged schematic sectional view for describing a radiation detecting device.
  • FIG. 2 is a schematic sectional view for describing a method for manufacturing the radiation detecting device.
  • FIG. 3 is a schematic sectional view for describing a radiation detecting device according to a different embodiment.
  • FIG. 4 is a schematic sectional view and an enlarged schematic sectional view for describing a radiation detecting device according to a different embodiment.
  • FIG. 5 is a schematic sectional view of a radiation detecting device according to a different embodiment.
  • FIG. 6 is a conceptual view of an exemplary application to a radiation detecting system using a radiation detecting device.
  • light includes visible light and infrared light
  • radiation includes X rays, ⁇ rays, ⁇ rays, and ⁇ rays.
  • FIG. 1( a ) is a schematic plan view for describing the radiation detecting device 100 .
  • FIG. 1( b ) is a schematic sectional view for describing a sectional structure at a portion along A-A′ in FIG. 1( a ) .
  • FIG. 1( c ) is an enlarged schematic sectional view of a region B in FIG. 1( b ) .
  • the radiation detecting device 100 includes a plurality of sensor substrates 112 , a scintillator 120 , and an adhesive member 130 .
  • Each of the plurality of sensor substrates 112 includes a first surface 112 a where a plurality of photoelectric converting elements 115 are arranged in an array, a second surface 112 b that opposes the first surface 112 a, and a side surface 112 c that connects the first surface 112 a and the second surface 112 b to each other.
  • the plurality of sensor substrates 112 are disposed adjacent to each other.
  • the scintillator 120 is disposed at a side of the first surfaces of the plurality of sensor substrates 112 .
  • the adhesive member 130 adheres the plurality of sensor substrates 112 and the scintillator 120 to each other at the side of the first surfaces of the plurality of sensor substrates 112 .
  • the sheet-like adhesive member 130 adheres to at least portions of the side surfaces 112 c and the first surfaces 112 a such that the sheet-like adhesive member 130 extends and continuously adheres from the first surfaces 112 a to at least portions of the side surfaces 112 c.
  • the adhesive member 130 adheres the plurality of sensor substrates 112 and the scintillator 120 to each other, and is provided so as to extend from the first surfaces 112 a to at least portions of the side surfaces 112 c of the sensor substrates 112 .
  • the adhesive member 130 adheres the plurality of sensor substrates 112 and the scintillator 120 to each other, and is provided so as to extend from the first surfaces 112 a to at least portions of the side surfaces 112 c of the sensor substrates 112 .
  • the plurality of photoelectric converting elements 115 are arranged in an array at the first surface 112 a.
  • a monocrystalline silicon substrate manufactured from a monocrystalline silicon wafer is used, with a photodiode being used as each photoelectric converting element 115 .
  • a plurality of switching elements (not shown) corresponding to the plurality of photoelectric converting elements 115 may be provided at each sensor substrate 112 .
  • the sensor substrates 112 according to the present invention are not limited to the above-described substrates. Sensor substrates that are provided with TFT pixels and an MIS sensor or a PIN sensor using, for example, amorphous silicon deposited on an insulating board may be used.
  • Each sensor substrate 112 further includes a guard ring 118 , a passivation film 116 , and a protective layer 117 .
  • the guard rings 118 are conductors that are provided for preventing electro-static damage to the photoelectric converting elements 115 .
  • Each guard ring 118 is disposed on at least a portion of the corresponding first surface 112 a along peripheries of the plurality of photoelectric converting elements 115 .
  • Each passivation film 116 is an insulating film that covers the photoelectric converting elements 115 .
  • each passivation film 116 an inorganic insulating film, such as a silicon oxide film or a silicon nitride film, is suitably used.
  • Each passivation film 116 covers a portion of the guard ring 118 and the plurality of photoelectric converting elements 115 .
  • Each protective layer 117 is a layer for protecting the photoelectric converting elements 115 and its corresponding passivation film 116 from, for example, external shock.
  • an organic insulating layer such as a polyimide layer, is suitably used.
  • Each protective layer 117 covers its corresponding passivation film 116 excluding an end portion of its corresponding passivation film 116 .
  • the scintillator 120 converts X rays, which are radiation rays, transmitted through a test object into light having wavelengths that are detectable by the photoelectric converting elements 115 of the sensor substrates 112 .
  • the scintillator 120 according to the embodiment includes a base material 121 , a scintillator layer 122 , and a scintillator protective layer 123 .
  • the base material 121 for example, a-C, Al, or a resin may be used, Al that is less rigid than a-C may be suitably used.
  • the scintillator layer 122 is a layer that converts X rays into light having wavelengths that are detectable by the photoelectric converting elements 115 .
  • GOS is Gd 2 O 2 3 :Tb (terbium-doped gadolinium oxysulfide), and is a granular scintillator material.
  • CsI:Tl typifies alkali halide based scintillators, and is thallium-doped cesium iodide, and includes scintillator materials containing columnar crystals.
  • the scintillator protective layer 123 is a layer that protects the scintillator layer 122 from external moisture and external shock.
  • an organic resin such as a polyparaxylylene resin or a hot-melt resin, may be suitably used.
  • the protective layer 123 is not shown.
  • the adhesive member 130 adheres the plurality of sensor substrates 112 and the scintillator 120 to each other at the side of the first surfaces of the plurality of sensor substrates 112 .
  • the adhesive member 130 adheres to at least portions of the side surfaces 112 c and the first surfaces 112 a such that the adhesive member 130 extends and continuously adheres from the first surfaces 112 a to at least portions of the side surfaces 112 c.
  • the adhesive member 130 extends on and continuously adheres to the protective layers 117 , the passivation films 116 , the guard rings 118 , the first surfaces 112 a of the sensor substrates 112 , and at least portions of the side surfaces 112 c of the sensor substrates 112 .
  • the adhesive member 130 more suitably adheres to the sensor substrates 112 .
  • a material having a high light transmittance with respect to light converted by the scintillator 122 is suitably used.
  • a sheet-like member such as an acrylic resin sheet, a silicon-based resin sheet, or a hot-melt resin sheet, may be suitably used.
  • the adhesive member 130 contain an organic resin whose adhesive strength with respect to glass when the peeling angle in conformity with JIS Z0237 is 180 degrees is 10N/25 mm or greater, whose transmittance with respect to the maximum emission wavelength of the scintillator is 90% or greater, and whose thickness is from 1 ⁇ m to 50 ⁇ m.
  • a base 111 is a member that mechanically supports the plurality of sensor substrates 112 .
  • a base such as a glass substrate or an SUS substrate, having a rigidity that is higher than those of the base material 121 and the scintillator layer 122 is suitably used.
  • a fixing member 113 is a member having adhesiveness for fixing the plurality of sensor substrates 112 to the base 111 .
  • a material that is the same as that used for the adhesive member 130 may be used.
  • Wiring boards 114 are wiring boards for transmitting signals between an external circuit (not shown) and the sensor substrates 112 .
  • flexible printed boards may be used.
  • FIG. 2( a ) is a schematic sectional view for describing a sectional structure prior to an adhering step at a portion corresponding to the portion along A-A′ in FIG. 1( a ) .
  • FIG. 2( b ) is a schematic sectional view that describes an exemplary adhering step.
  • FIG. 2( c ) is a schematic sectional view for describing another exemplary adhering step.
  • the protective layer 123 is not shown.
  • the plurality of sensor substrates 112 are disposed on the base 111 .
  • the scintillator 120 including the scintillator layer 122 provided on the base material 121 , at the side of the first surfaces of the plurality of sensor substrates 112 with the adhesive member 130 interposed therebetween, the scintillator layer 122 is disposed on the surfaces 112 a of the plurality of sensor substrates 112 .
  • a region of the scintillator 120 corresponding to a region between the plurality of sensor substrates 112 is pressed from a side opposite to the plurality of sensor substrates 112 .
  • a rotatable roller 150 linearly presses the adhesive member 130 along a side opposing the sensor substrates 112 from the side opposite to the plurality of sensor substrates 112 .
  • regions of portions of the adhesive member 130 that are positioned between the plurality of sensor substrates 112 also adhere to regions of portions of the side surfaces 112 b of the sensor substrates 112 . It is desirable that the pressure generated by the roller 150 be greater than or equal to 0.4 MPa.
  • the region of the scintillator 120 corresponding to the region between the plurality of sensor substrates 112 may be pressed from the side opposite to the plurality of sensor substrates 112 by using a pressure structure 151 whose temperature is adjustable.
  • the hot-melt resin is heated to a temperature that is greater than or equal to the melting temperature, and is pressed at a pressure that is greater than or equal to 0.4 MPa, the regions of the portions of the adhesive member 130 that are positioned between the plurality of sensor substrates 112 also adhere to the regions of the portions of the side surfaces 112 b of the sensor substrates 112 .
  • the side surfaces 112 c of the plurality of sensor substrates 112 may have various structures for increasing the adhesive strength of the adhesive member 130 .
  • An exemplary structure for increasing the adhesive strength of the adhesive member 130 is shown in FIG. 3 .
  • FIG. 3 is a schematic sectional view for describing the exemplary structure for increasing the adhesive strength of the adhesive member 130 in an enlarged sectional structure of a region B in FIG. 1( b ) . In the example shown in FIG.
  • the adhesive member 130 extends on and continuously adheres to at least portions of the side surfaces 112 c and the third surfaces 112 d from the first surfaces 112 a between the plurality of sensor substrates 112 .
  • the adhesive member 130 is capable of suitably continuously covering portions up to the side surfaces 112 c.
  • FIGS. 4( a ) and 4( b ) each show a different exemplary structure for increasing the adhesive strength of the adhesive member 130 .
  • FIG. 4( a ) is a schematic sectional view for describing a sectional structure of the different exemplary structure for increasing the adhesive strength of the adhesive member 130 at a portion along A-A′ in FIG. 1( a ) .
  • FIG. 4( b ) is an enlarged schematic sectional view of a region C in FIG. 4( a ) .
  • the protective layer 123 is not shown.
  • FIGS. 4( a ) In the different exemplary structure shown in FIGS.
  • the side surface 112 c of at least one of the plurality of sensor substrates 112 is inclined.
  • the inclination extends towards an inner side of the sensor substrate 112 at an angle D from the first surface 112 a towards the second surface 112 b with respect to a perpendicular line that is perpendicular to the first surface 112 a.
  • a structure that is inclined at such an angle D is provided, so that this structure is one in which the adhesive member 130 is less likely to peel from at least a portion of the side surface 112 c compared to the structure in FIG. 1( c ) .
  • the angle D be from 0.2 degrees to 5 degrees.
  • FIGS. 5( a ) and 5( b ) a radiation detecting device using a more desirable fixing member 113 is described.
  • FIG. 5( a ) is a schematic sectional view for describing a sectional structure of the radiation detecting device using the more desirable fixing member 113 .
  • FIG. 5( b ) is a schematic sectional view for describing the more desirable fixing member 113 . As shown in FIG.
  • the fixing member 113 since the rigidity of the fixing member 113 is lower than the rigidity of the adhesive member 130 , even if stress caused by temperature variations and differences between thermal expansion coefficients occurs, the fixing member 113 absorbs this stress. Therefore, the stress that is applied to the adhesive member 130 is reduced, and the intrusion of air bubbles into the adhesive member 130 due to peeling of the adhesive member 130 from the first surfaces 112 a of the plurality of sensor substrates 112 is reduced.
  • a sheet-like fixing member 113 including an expanding-and-contracting material 161 that is sandwiched by an adhesive member 160 is available.
  • the expanding-and-contracting material 161 a sheet-like polyolefin-based foam is used, and air bubbles 162 are contained in the expanding-and-contracting material 161 .
  • the adhesive member 160 for example, a sheet-like acrylic adhesive member or a sheet-like silicon-based adhesive member is used.
  • FIG. 6 illustrates an exemplary application to the movable radiation detecting system using the radiation detecting device according to the above-described embodiments.
  • FIG. 6 is a conceptual view of the radiation detecting system using a transportable radiation detecting device that is capable of taking pictures of moving/still images.
  • reference numeral 115 denotes a display that is capable of displaying an image signal acquired from the radiation detecting device 100 according to the embodiment
  • reference numeral 903 denotes a bed for placing a test object 904 .
  • Reference numeral 902 denotes a car that allows a radiation generating device 110 , the radiation detecting device 100 , and a C-type arm 901 to move
  • reference numeral 905 denotes a movable controlling device having a structure that allows these to be controlled.
  • the C-type arm 901 holds the radiation generating device 110 and the radiation detecting device 100 .
  • the controlling device 905 includes a control computer 108 , a control panel 114 , and a radiation controller 109 .
  • An image signal acquired by the radiation detecting device 100 can be subjected to image processing and transmitted to, for example, the display device 115 .
  • Image data generated by the image processing by the controlling device 905 can be sent to a remote place through transmitting means such as telephone lines. This makes it possible for a doctor at the remote place to diagnose an image based on the transferred image data. It is possible to record the transmitted data image on a film or store the transmitted data image on storage means, such as an optical disk.
  • the durability tests are tests for confirming images by applying radiation to radiation detecting devices after scintillators 120 while disposed so as to face downward have been vibrated at a predetermined frequency and at a gravitational acceleration 2 G.
  • a monocrystalline silicon substrate having a thickness of 500 ⁇ m and provided with a plurality of photodiodes arranged in an array on a first surface 112 a is used.
  • the scintillator 120 includes an Al base 121 having a thickness of 300 ⁇ m, a CsI:Tl scintillator layer 122 having a thickness of 800 ⁇ m, and a polyparaxylylene scintillator protective layer 123 having a thickness of 25 ⁇ m.
  • Each sensor substrate 112 is fixed to a base 11 being a glass substrate having a thickness of 1.8 mm by a fixing member 113 using an expanding-and-contracting material 161 , which is a polyolefin-based foam having a thickness of 1.5 mm.
  • An adhesive member 130 having a thickness of 25 ⁇ m and using an acrylic resin is disposed between the scintillator 120 and the first surfaces 112 a of the plurality of sensor substrates 112 . As shown in FIG.
  • the adhesive member 130 adheres up to locations on side surfaces 112 c of the sensor substrates 112 that are 5 ⁇ m from sides of the first surfaces 112 a.
  • Sensor substrates 112 , the scintillator 120 , and a fixing member 133 that are similar to those according to Example 1 are used.
  • An adhesive member 130 having a thickness of 25 ⁇ m and using a hot-melt resin whose main component is ethylene methacrylic acid ester copolymer is disposed between the scintillator 120 and first surfaces 112 a of the plurality of sensor substrates 112 . As shown in FIG.
  • the adhesive member 130 is pressed at a pressure of 0.4 MPa, so that the adhesive member 130 adheres up to locations on side surfaces 112 c of the sensor substrates 112 that are 50 ⁇ m from sides of the first surfaces 112 a.
  • sensor substrates 112 are the same as the sensor substrates 112 according Example 1 except that the sensor substrates 112 have a third surface 112 d formed as a result of removing corners of a first surface by removing 5 ⁇ m of an end of the corresponding first surface.
  • the adhesive member 130 is pressed at a pressure of 0.4 MPa, so that the adhesive member 130 adheres up to locations on side surfaces 112 c of the sensor substrates 112 that are 7 ⁇ m from sides of the first surfaces 112 a.
  • sensor substrates 112 are the same as the sensor substrates 112 according to Example 1 except that the sensor substrates 112 are inclined towards inner sides of the sensor substrates 112 at the angle D of 1 degree.
  • the adhesive member 130 is pressed at a pressure of 0.4 MPa, so that the adhesive member 130 adheres up to locations on side surfaces 112 c of the sensor substrates 112 that are 4 ⁇ m from sides of first surfaces 112 a.

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US15/103,247 2013-12-13 2014-10-30 Radiation detecting device, radiation detecting system, and method for manufacturing the radiation detecting device Abandoned US20160291172A1 (en)

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JP2013-258139 2013-12-13
JP2013258139A JP6270450B2 (ja) 2013-12-13 2013-12-13 放射線検出装置、放射線検出システム、及び、放射線検出装置の製造方法
PCT/JP2014/078874 WO2015087636A1 (ja) 2013-12-13 2014-10-30 放射線検出装置、放射線検出システム、及び、放射線検出装置の製造方法

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US11086030B2 (en) 2018-07-23 2021-08-10 Canon Kabushiki Kaisha Radiation imaging apparatus, manufacturing method thereof, and radiation imaging system
US20220167934A1 (en) * 2019-09-30 2022-06-02 Fujifilm Corporation Radiography apparatus and method for controlling radiography apparatus
TWI864350B (zh) * 2020-12-23 2024-12-01 日商濱松赫德尼古斯股份有限公司 放射線檢測器、放射線檢測器的製造方法、以及閃爍板單元

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JP6877289B2 (ja) * 2017-07-31 2021-05-26 キヤノン株式会社 放射線検出装置、放射線検出システム、及び放射線出装置の製造方法
CN116547799A (zh) * 2020-12-04 2023-08-04 株式会社力森诺科 固化性树脂膜、半导体装置制造用膜材料、半导体装置制造用固化性树脂组合物、及制造半导体装置的方法

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