US20150022274A1 - Piezoelectric film producing process, vibrator element, vibrator, oscillator, electronic device, and moving object - Google Patents

Piezoelectric film producing process, vibrator element, vibrator, oscillator, electronic device, and moving object Download PDF

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US20150022274A1
US20150022274A1 US14/330,626 US201414330626A US2015022274A1 US 20150022274 A1 US20150022274 A1 US 20150022274A1 US 201414330626 A US201414330626 A US 201414330626A US 2015022274 A1 US2015022274 A1 US 2015022274A1
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gas
vibrator element
vibrator
piezoelectric film
piezoelectric
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Takashi Yamazaki
Osamu Iwamoto
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Seiko Epson Corp
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Seiko Epson Corp
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Publication of US20150022274A1 publication Critical patent/US20150022274A1/en
Priority to US14/727,215 priority Critical patent/US9461617B2/en
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    • H01L41/09—
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/15—Constructional features of resonators consisting of piezoelectric or electrostrictive material
    • H03H9/17—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator
    • H03H9/171—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator implemented with thin-film techniques, i.e. of the film bulk acoustic resonator [FBAR] type
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22C—ALLOYS
    • C22C21/00—Alloys based on aluminium
    • C22C21/12—Alloys based on aluminium with copper as the next major constituent
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/0688—Cermets, e.g. mixtures of metal and one or more of carbides, nitrides, oxides or borides
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/14—Metallic material, boron or silicon
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
    • C23C14/3414—Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy
    • H01L41/107—
    • H01L41/18—
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
    • H03B5/00—Generation of oscillations using amplifier with regenerative feedback from output to input
    • H03B5/30—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element being electromechanical resonator
    • H03B5/32—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element being electromechanical resonator being a piezoelectric resonator
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/01—Manufacture or treatment
    • H10N30/09—Forming piezoelectric or electrostrictive materials
    • H10N30/092—Forming composite materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/80—Constructional details
    • H10N30/85—Piezoelectric or electrostrictive active materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/20—Piezoelectric or electrostrictive devices with electrical input and mechanical output, e.g. functioning as actuators or vibrators
    • H10N30/204—Piezoelectric or electrostrictive devices with electrical input and mechanical output, e.g. functioning as actuators or vibrators using bending displacement, e.g. unimorph, bimorph or multimorph cantilever or membrane benders
    • H10N30/2041—Beam type
    • H10N30/2042—Cantilevers, i.e. having one fixed end
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/80—Constructional details
    • H10N30/85—Piezoelectric or electrostrictive active materials
    • H10N30/853—Ceramic compositions

Definitions

  • the present invention relates to a piezoelectric film producing process, a vibrator element that includes a piezoelectric film produced by the process, and vibrators, oscillators, electronic devices, and moving objects that include the vibrator element.
  • a piezoelectric thin film resonator (hereinafter, referred to as “vibrator element”) is known that is configured to include a lower electrode provided on a substrate, a piezoelectric film provided on the lower electrode, and an upper electrode provided on the piezoelectric film, and having a region opposite the lower electrode with the piezoelectric film in between (see, for example, JP-A-2013-34130).
  • the vibrator element uses aluminum nitride (hereinafter, “AlN”) for the piezoelectric film.
  • AlN aluminum nitride
  • the piezoelectric film is deposited (formed) by spattering, using Al (aluminum) as the target material (deposition material) in a mixed atmosphere of N 2 (nitrogen) gas and Ar (argon) gas,
  • the piezoelectric film uses pure aluminum as deposition material
  • processes such as the deposition of the upper electrode after the AlN deposition may produce internal stress in the aluminum present at the crystal grain boundaries of the deposited AlN.
  • the piezoelectric film thus involves the risk of generating stress migration, forming voids in the aluminum.
  • the resulting degradation of electromechanical coupling coefficient increases the impedance of the piezoelectric film. This may cause deterioration in the function of the piezoelectric film, and the reliability (long-term reliability in particular) may suffer as a result of the progression of stress migration (e.g., void diffusion).
  • An advantage of some aspects of tine invention is to solve at least a part of the problems described above, and the invention can be implemented as the following forms or application examples.
  • a piezoelectric film producing process includes depositing a piezoelectric film in a mixed atmosphere of N 2 gas and Ar gas by using a sputtering method, using an Al—Cu alloy as deposition material.
  • the piezoelectric film producing process includes depositing a piezoelectric film in a mixed atmosphere of N 2 gas and Ar gas by using a sputtering method, using an Al—Cu alloy as deposition material (target material).
  • the piezoelectric film producing process uses an Al—Cu alloy as the deposition material of the piezoelectric film, the copper exists by being dispersed in aluminum, at the crystal grain boundaries of the piezoelectric film (specifically, AlN film) deposited by sputtering (in other words, intermetallic compound (Al 3 Cu) is produced).
  • the piezoelectric film producing process can thus improve the function of the piezoelectric film, as compared to the producing process of related art (for example, JF-A-2013-34130), and can suppress stress migration to improve the reliability of the piezoelectric film.
  • the Cu content in the Al—Cu alloy ranges from 0.25 mass % to 1.0 mass %.
  • the piezoelectric film producing process can suppress Al diffusion at the crystal grain boundaries, and generation of stress migration.
  • the Cu content in the Al—Cu alloy ranges from 0.4 mass % to 0.6 mass %.
  • the piezoelectric film producing process can further suppress Al diffusion at the crystal grain boundaries, and generation of stress migration.
  • the mixture ratio of the N 2 gas and the Ar gas ranges from N 2 gas 50 volume %:Ar gas 50 volume % to N 2 gas 99 volume %:Ar gas 1 volume %.
  • the piezoelectric film producing process can produce a desirably functioning piezoelectric film (specifically, AlN film) by using a sputtering method.
  • a vibrator element includes a base portion, and a vibrating arm extending from the base portion, wherein the vibrating arm includes a piezoelectric film that contains Cu at a crystal grain boundary.
  • the vibrator element includes a base portion, and a vibrating arm extending from the base portion, and the vibrating arm includes a piezoelectric film (specifically, AIM film) that contains Cu at the crystal grain boundary. This makes it possible to suppress generation of stress migration in the piezoelectric film.
  • AIM film specifically, AIM film
  • the vibrator element can thus improve the function of the piezoelectric film as compared to related art (for example, JP-A-2013-34130), and the reliability of the piezoelectric film.
  • the vibrator element By thus lowering the CI value, the vibrator element can improve its vibration characteristics and reliability.
  • a vibrator according to this application Example includes the vibrator element according to the application example described above, and a package housing the vibrator element.
  • the vibrator of this configuration includes the vibrator element according to the application example described above, and a package housing the vibrator element. This makes it possible to provide a highly reliable vibrator having the effects described in the application example described above.
  • An oscillator according to this application example includes the vibrator element according to the application example described above, and an oscillation circuit that oscillates the vibrator element.
  • the oscillator of this configuration includes the vibrator element according to the application example described above, and an oscillation circuit that oscillates the vibrator element. This makes it possible to provide a highly reliable oscillator having the effects described in the application example described above.
  • An electronic device includes the vibrator element according to the application example described above.
  • the electronic device of this configuration includes the vibrator element according to the application example described above. This makes it possible to provide a highly reliable electronic device having the effects described in the application example described above.
  • a moving object according to this application example includes the vibrator element according to the application example described above.
  • the moving object of this configuration includes the vibrator element according to the application example described above. This makes it possible to provide a highly reliable moving object having the effects described in the application example described above.
  • FIGS. 1A and 1B are schematic diagrams illustrating a schematic structure of a vibrator element of First Embodiment, in which FIG. 1A is a plan view, and FIG. 1B is a cross sectional view taken at line A-A of FIG. 1A .
  • FIG. 2 is a cross sectional view taken at line B-B of FIG. 1A , shown alongside with a wiring diagram of each excitation electrode.
  • FIG. 3 is a schematic diagram explaining a piezoelectric body producing process.
  • FIG. 4 is a diagram representing piezoelectric body deposition conditions, and corresponding evaluation results.
  • FIGS. 5A and 5B are schematic diagrams illustrating a schematic structure of a vibrator of Second Embodiment, in which FIG. 5A is a plan view as viewed from the lid (cap) side, and FIG. 5B is a cross sectional view taken at line C-C of FIG. 5A .
  • FIGS. 6A and 6B are schematic diagrams illustrating a schematic structure of an oscillator of Third Embodiment, in which FIG. 6A is a plan view as viewed from the lid side, and FIG. 6B is a cross sectional, view taken at line C-C of FIG. 6A .
  • FIG. 7 is a schematic perspective view of a cell phone of Fourth Embodiment.
  • FIG. 8 is a schematic perspective view of an automobile of Fifth Embodiment.
  • a vibrator element that uses a Si (silicon) base material is described as an example of the vibrator element.
  • FIGS. 1A and 1B are schematic diagrams illustrating a schematic structure of the vibrator element of First Embodiment.
  • FIG. 1A is a plan view
  • FIG. 1B is a cross sectional view taken at line A-A of FIG. 1A . Wires are omitted, and the dimensional ratio of each constituting element differs from the actual dimension ratios.
  • FIG. 2 is a cross sectional view taken at line B-B of FIG. 1A , shown alongside with a wiring diagram of each excitation electrode.
  • the X, Y, and Z axes are coordinate axes that are orthogonal to each other.
  • the base material of a vibrator element 1 includes a base portion 10 , and three vibrating arms 11 a, 11 b , and 11 c extending from the base portion 10 in Y-axis direction.
  • a Si substrate for example, a SOI-, or Poly-Si-deposited substrate
  • the base portion 10 is used for the three vibrating arms 11 a , 11 b , and 11 c , and the base portion 10 .
  • the vibrating arms 11 a, 11 b , and 11 c have a form of substantially a rectangular column.
  • the vibrating arms 11 a , 11 b , and 11 c include excitation electrodes 12 a, 12 b, and 12 c .
  • the excitation electrodes 12 a, 12 b, and 12 c are aligned in X-axis direction orthogonal to Y-axis direction in planar view, and are provided on at least one of major surfaces 10 a and 10 b (here, on the major surface 10 a ) that lie on the plane (XY plane) specified by X axis and Y axis,
  • the excitation electrodes 12 a, 12 b, and 12 c cause flexural vibration (antiplane vibration: occurring in directions that are not along the major surface 10 a ) in the vibrating arras 11 a, 11 b , and 11 c along Z-axis direction orthogonal to the major surface 10 a (the direction of arrow in FIG. 1B ).
  • the base portion 10 , the vibrating arms 11 a, 11 b , and 11 c , and the excitation electrodes 12 a, 12 b, and 12 c are formed with high accuracy by using methods, for example, such as sputtering, photolithography, and etching.
  • the excitation electrodes 12 a, 12 b, and 12 c have a laminate structure including first electrodes 12 a 1 , 12 b 1 , and 12 c 1 provided on the major surface 10 a side, second electrodes 12 a 2 , 12 b 2 , and 12 c 2 provided above the first electrodes 12 a 1 , 12 b 1 , and 12 c , a piezoelectric body 13 disposed as a piezoelectric film between the first electrodes 12 a , 12 b 1 , and 12 c 1 and the second electrodes 12 a 2 , 12 b 2 , and 12 c 2 , and an insulating film 14 provided between the first electrodes 12 a 1 , 12 b 1 , and 12 c 1 and the piezoelectric body 13 .
  • the insulating film 14 may be omitted.
  • the first electrodes 12 a 1 , 12 b 1 , and 12 c 1 , and the second electrodes 12 a 2 , 12 b 2 , and 12 c 2 of the excitation electrodes 12 a, 12 b, and 12 c use a film that contains TIN (titanium nitride).
  • the piezoelectric body 13 uses a film that contains AlN (aluminum nitride).
  • the insulating film 14 uses a film that contains amorphous SiO 2 (silicon dioxide).
  • the piezoelectric body 13 is formed (deposited) by sputtering, using an Al—Cu alloy as deposition material (target material), as will be described later in detail.
  • the first electrodes 12 a 1 , 12 b 1 , and 12 c 1 , and the second electrodes 12 a 2 , 12 b 2 , and 12 c 2 of the excitation electrodes 12 a , 12 b, and 12 c nave a thickness of preferably about 15 nm.
  • the piezoelectric body 13 has a thickness of preferably about 200 nm to 400 nm
  • the insulating film 14 has a thickness of preferably about 10 nm.
  • the first electrodes 12 a 1 , 12 b 1 , and 12 c 1 , and the second electrodes 12 a 2 , 12 b 2 , and 12 c 2 may use a film containing materials (for example, such as Mo, Ti, Ni, Pt, Au, W, WSi, Ta, and ITO) different from TiN.
  • a film containing materials for example, such as Mo, Ti, Ni, Pt, Au, W, WSi, Ta, and ITO
  • the excitation electrodes 12 a, 12 b, and 12 c extend towards the tip portion from the root portion of the vibrating arms 11 a , 11 b , and 11 c (the boundary portion from the base portion 10 ) in about a half length of the full length (from the root to the tip along Y-axis direction) of the vibrating arms 11 a, 11 b , and 11 c.
  • the base portion 10 is thicker than the vibrating arms 11 a , 11 b , and 11 c in Z-axis direction.
  • the base portion 10 has fixing portions 10 c and 10 d providing regions for fixing external members such as a package.
  • the fixing portions 10 c and 10 d are provided on the major surface 10 b side of the base portion 10 at the both ends relative to X-axis direction, as indicated by long dashed double-short dashed line in FIG. 1A , Preferably, the fixing portions 10 c and 10 d are provided at the end of the base portion 10 opposite the vibrating arms 11 a , 11 b , and 11 c in Y-axis direction.
  • the first electrodes 12 a 1 , 12 b 1 , and 12 c 1 , and the second electrodes 12 a 2 , 12 b 2 , and 12 c 2 of the excitation electrodes 12 a, 12 b, and 12 c in the vibrator element 1 are connected to an alternate current power supply by crossed wires, and a driving alternating voltage is applied to these electrodes.
  • the first electrode 12 a 1 of the vibrating arm 11 a , the second electrode 12 b 2 of the vibrating arm 11 b , and the first electrode 12 c l of the vibrating arm 11 c are connected to bring these electrodes at the same potential.
  • the second electrode 12 a 2 of the vibrating arm 11 a, the first electrode 12 b 1 of the vibrating arm 11 b , and the second electrode 12 c 2 of the vibrating arm 11 c are connected to bring these electrodes at the same potential.
  • the vibrator element 1 is configured so that the direction of the electric field generated by the crossed wires in the excitation electrodes 12 a and 12 c becomes opposite of that generated in the excitation electrode 12 b, and the piezoelectric body 13 expands and contracts in opposite ways between the vibrating arms 11 a and 11 c and the vibrating arm 11 b.
  • the piezoelectric body 13 of the vibrating arm 11 b contracts when the piezoelectric bodies 13 of the vibrating arms 11 a and lie expand
  • the piezoelectric body 13 of the vibrating arm lib expands when the piezoelectric bodies 13 of the vibrating arms 11 a and lie contract.
  • the vibrating arms 11 a, 11 b , and 11 c bend in the direction of black arrow when the alternating voltage is at one potential, and in the direction of blank arrow when the alternating voltage is at the other potential.
  • the vibrating arms 11 a , 11 b , and 11 c in the vibrator element 1 undergo flexural vibration (antiplane vibration) in Z-axis direction.
  • flexural vibration occurs in reverse direction (reverse phase) between the adjacent vibrating arms (between 11 a and 11 b , and between 11 b and 11 c in this embodiment).
  • a process for producing the piezoelectric body 13 as a constituting element of the excitation electrodes 12 a , 12 b, and 12 c of the vibrator element 1 is described below (piezoelectric film producing process).
  • FIG. 3 is a schematic diagram explaining the piezoelectric body producing process.
  • the vibrator element 1 with the first electrodes 12 a 1 , 12 b 1 , and 12 c 1 (not illustrated in the figure) and the insulating film 14 is set on a base mount 51 in a vacuum chamber 50 .
  • N 2 (nitrogen) gas and Ar (argon) gas are introduced into the vacuum chamber 50 with a vacuum pump or the like (not illustrated) to produce a mixed atmosphere of N 2 gas and Ar gas.
  • the pressure inside the vacuum chamber 50 is preferably about 0.53 Pa (4 mTorr).
  • the N 2 gas and Ar gas mixture ratio preferably ranges from N 2 gas 50 volume %: Ar gas 50 volume % to N 2 gas 99 volume %:Ar gas 1 volume %.
  • the vibrator element 1 is preferably kept at ordinary temperature.
  • An Al—Cu alloy 52 as deposition material (target material) is then set on a target mount 53 .
  • the Cu content in the Al—Cu alloy is preferably 0.25 mass % to 1.0 mass %, more preferably 0.4 mass % to 0.6 mass %.
  • a power supply 54 applies voltage (for example, about 100 V to 1,000 V) by using a sputtering method (reactive sputtering), using the Al—Cu. alloy 52 as cathode, and the vibrator element 1 as anode.
  • voltage for example, about 100 V to 1,000 V
  • sputtering method reactive sputtering
  • the ion atoms in the mixed gas of it gas and Ar gas sputter the surface of the Al—Cu alloy 52 , and the particles (atoms and molecules) jumped out of the Al—Cu alloy 52 deposit and fix to the vibrator element 1 , covering the insulating film 14 . This deposits (forms) the piezoelectric body 13 (AlN film).
  • the piezoelectric body 13 is then patterned into a desired shape by using methods such as photolithography, and etching.
  • the piezoelectric body 13 can be obtained in this manner after these steps.
  • the process for producing the piezoelectric body 13 of the present embodiment includes depositing the piezoelectric body 13 (piezoelectric film) in a mixed atmosphere of N 2 gas and Ar gas by using a sputtering method, using an Al—Cu alloy as deposition material (target material).
  • the piezoelectric film producing process uses the Al—Cu alloy as deposition material for the deposition of the piezoelectric body 13 , the copper exists by being dispersed in aluminum at the crystal grain boundaries of the piezoelectric body 13 (specifically, AlN film) deposited as the piezoelectric film by sputtering (in other words, intermetallic compound (Al 3 Cu) is produced).
  • the piezoelectric film producing process can thus improve the function of the piezoelectric body 13 as compared to the producing process of related art (for example, JP-A-2013-34130), and can suppress stress migration to improve the reliability of the piezoelectric body 13 .
  • the piezoelectric film producing process can suppress Al diffusion at the crystal grain boundaries of the piezoelectric body 13 , and thus generation of stress migration.
  • the piezoelectric film producing process can further suppress Al diffusion at the crystal grain boundaries of the piezoelectric body 13 , and thus generation of stress migration.
  • the piezoelectric body 13 (specifically, AlN film) produced by the piezoelectric film producing process by sputtering can be desirably functional.
  • FIG. 4 is a diagram representing piezoelectric body deposition conditions (N 2 gas and Ar gas mixture ratios), and corresponding evaluation results for each sample.
  • the sheet resistance of the piezoelectric body 13 should, be about at least 30,000 ⁇ (ohm square), and a 3- to 4-degree angle is considered sufficient for FWHM (half width of the peak in the X-ray diffraction orientation evaluation of the piezoelectric body 13 ).
  • the Cu content in the deposition material Al—Cu alloy of the piezoelectric body 13 is 0.5 mass %.
  • sample No. 1 N 2 gas 99 volume %:Ar gas 1 volume %; in the following, the unit “volume %” will be omitted) has a sheet resistance of infinity ⁇ , and an FWHM of 3.18 degrees, and the evaluation result is “Good”.
  • Sample No. 2 (N 2 gas 80:Ar gas 20) has a sheet resistance of infinity ⁇ , and an FWHM of 3.42 degrees, and the evaluation result is “Good”.
  • Sample No. 3 (N 2 gas 70:Ar gas 30) has a sheet resistance of infinity ⁇ and an FWHM of 3.43 degrees, and the evaluation result is “Good”.
  • Sample No. 4 (N 2 gas 60:Ar gas 40) has a sheet resistance of infinity ⁇ , and an FWHM of 3.69 degrees, and the evaluation result is “Good”.
  • Sample No. 5 gas 50 Ar gas 50
  • sample ho. 6 (N 2 gas 40 :Ar gas 60) has a sheet resistance of 0.3100 ⁇ , and the FWHM is incalculable (the peak is unclear, and the half width cannot be calculated), and the evaluation result is “Poor”.
  • Sample No. 7 (N 2 gas 10:Ar gas 90) has a sheet resistance of 0.0621 ⁇ , and the FWHM is incalculable (the peak is unclear, and the half width cannot be calculated), and the evaluation result is “Poor”.
  • the vibrator element 1 of the present embodiment includes the base portion 10 , and the vibrating arms 11 a , 11 b , and 11 c extending from the base portion 10 , and the piezoelectric body 13 provided for the vibrating arms 11 a , 11 b , and 11 c is a piezoelectric film formed by using the Al—Cu alloy as deposition material. This makes it possible to suppress stress migration generation in the piezoelectric body 13 .
  • the vibrator element 1 can thus improve the function of the piezoelectric body 13 (specifically, for example, expansion and contraction capability under applied electric field) as compared to related art (for example, JP-A-2013-34130), and the reliability of the piezoelectric body 13 .
  • the vibrator element 1 By thus lowering the CI value, the vibrator element 1 can improve its vibration characteristics and reliability.
  • the vibrator element 1 may include a SiO 2 -containing film between the major surface 10 a and the first electrodes 12 a 1 , 12 b 1 , and 12 c 1 of the vibrating arms 11 a, 11 b , and 11 c.
  • the SiO 2 -containing film in the vibrator element 1 functions as a temperature characteristics correction film for the vibrating arms 11 a, 11 b , and 11 c.
  • the slope of the frequency-temperature characteristics of one SiO 2 -containing film in the vibrator element 1 corrects (cancels) the slope of the frequency-temperature characteristics of the vibrating arms 11 a, 11 b , and 11 c that use Si as base material, and produces flat frequency-temperature characteristics.
  • the vibrator element 1 can suppress frequency fluctuations due to temperature changes, and can improve the frequency-temperature characteristics.
  • the SiO 2 -containing film may be provided on the opposite side (the major surface 10 b side) of the first electrodes 12 a 1 , 12 b 1 , and 12 c 1 (the major surface 10 a side) of the vibrating arms 11 a, 11 b , and 11 c .
  • FIGS. 5A and 5B are schematic diagrams illustrating a schematic structure of the vibrator of Second Embodiment.
  • FIG. 5A is a plan view as viewed from the lid (cap) side
  • FIG. 5B is a cross sectional view taken at line C-C of FIG. 5A .
  • the lid is emitted, in the plan view. Wires are also omitted.
  • a vibrator 5 includes the vibrator element 1 described in First Embodiment, and a package 20 housing the vibrator element 1 .
  • the package 20 is substantially cuboid in shape, and includes a package base 21 having a substantially rectangular planar shape with a depression, and a plate-shaped lid 22 having a substantially rectangular planar shape covering the depression of she package base 21 .
  • the package base 21 uses, for example, materials such as an aluminum, oxide sintered body obtained by laminating and sintering a molded ceramic green sheet. Other examples include crystals, glass, and Si.
  • the lid 22 uses the same material used for the package base 21 , or metals such as kovar, and 42 alloy.
  • the package base 21 includes inner terminals 24 and 25 on an inner bottom surface (the bottom surface inside the depression) 23 .
  • the inner terminals 24 and 25 are substantially rectangular in shape, and are formed in the vicinity of interconnection electrodes 18 a and 18 b provided on the base portion 10 of the vibrator element 1 .
  • the interconnection electrodes 18 a and 18 b are connected to the first electrode (e.g., 12 b 1 ) and the second electrode (e.g., 12 b 2 ) of each excitation electrode (e.g., 12 b ) of the vibrator element 1 via wires (not illustrated).
  • the wire on one side of the alternate current power supply is connected to the interconnection electrode 18 a, and the wire on the other side of the alternate current power supply is connected to the interconnection electrode 18 b.
  • a pair of external terminals 27 and 28 for mounting external members such as an electronic device is formed on an outer bottom surface (the surface opposite the inner bottom surface 23 ; the bottom surface on the outer side) 26 of the package base 21 .
  • the external terminals 27 and 28 are connected to the inner terminals 24 and 25 via inner wires (not illustrated).
  • the external terminal 27 is connected to the inner terminal 24
  • the external terminal 28 is connected to the inner terminal 25 .
  • the inner terminals 24 and 25 , and the external terminals 27 and 28 use laminated metal films obtained by laminating coating materials such as Ni and Au on a metallization layer such as W and Mo, using a method such as plating.
  • the filing portions 10 c and 10 d of the base portion 10 of the vibrator element 1 are fixed to the inner bottom surface 23 of the package base 21 via an adhesive 30 of materials such as epoxy, silicone, and polyimide.
  • the interconnection electrodes 18 a and 18 b of the vibrator element 1 are connected to the inner terminals 24 and 25 via metal wires 31 of materials such as Au and Al.
  • inside of the package 20 is sealed air-tightly by bonding the package base 21 and the lid 22 to each other with a bonding member 29 such as a seam ring, low-melting-point glass, and an adhesive after covering the depression of the package base 21 with the lid 22 with the vibrator element 1 being connected to the inner terminals 24 and 25 of the package base 21 .
  • a bonding member 29 such as a seam ring, low-melting-point glass
  • the package may be configured from, for example, a plate-shaped package base, and a depressed lid.
  • the package may have a depression in both the package base and the lid,
  • the base portion 10 of the vibrator element 1 may be fixed at portions other than the fixing portions 10 c and 10 d , for example, at a point that includes the center of a straight line connecting the fixing portion 10 c and the fixing portion 10 d to each other, instead of using the fixing portions 10 c and 10 d.
  • the vibrating arms (e.g., 11 b ) of the vibrator element 1 in the vibrator 5 oscillate (resonate) in thickness direction (direction of arrow in FIG. 5B ) at a predetermined frequency (for example, about 32.768 kHz).
  • the vibrator 5 of Second Embodiment can have high reliability, and can exhibit the effects described in First Embodiment.
  • FIGS. 6A and 6B are schematic diagrams illustrating a schematic structure of the oscillator of Third Embodiment.
  • FIG. 6A is a plan view as viewed from the lid side
  • FIG. 6B is a cross sectional view taken at line C-C of FIG. 6A .
  • the lid, and some of other constituting elements are omitted in the plan view. Wires are also omitted.
  • an oscillator 6 includes the vibrator element 1 described in Burst Embodiment, an IC chip 40 provided as an oscillation circuit for oscillating the vibrator element 1 , and a package 20 housing the vibrator element 1 and she IC chip 40 .
  • Inner connection terminals 23 a are provided on an inner bottom surface 23 of a package base 21 .
  • the IC chip 40 installing the oscillation circuit is fixed to the inner bottom surface 23 of the package base 21 with an adhesive or the like (not illustrated).
  • the IC chip 40 is connected to the inner connection terminals 23 a as interconnection pads (not illustrated), using metal wires 41 of materials such as Au and Al.
  • the inner connection terminals 23 a are formed of a laminated metal film obtained by laminating coating materials such as Ni and Au on a metallization layer such as W and Mo, using a method such as plating, and are connected to, for example, the external terminals 27 and 28 , and the inner terminals 24 and 25 of the package 20 via inner wires (not illustrated).
  • the interconnection pads of the IC chip 40 and the inner connection terminals 23 a may be connected to each other by using, for example, an interconnection method based on flip-chip mounting, by flipping the IC chip 40 .
  • the vibrating arms (e.g., 11 b ) of the vibrator element 1 in the oscillator 6 oscillate (resonate) at a predetermined frequency (for example, about 32.768 kHz).
  • the oscillator 6 outputs the resulting oscillation signals to outside via various elements, including the IC chip 40 , the inner connection terminals 23 a, and the external terminals 27 and 28 .
  • the oscillator 6 of Third Embodiment can have high reliability, and can exhibit the effects described in First Embodiment.
  • the oscillator 6 may have an external module structure configuration (for example, a structure in which a vibrator having the vibrator element 1 , and the IC chip are individually mounted on a single substrate).
  • the following describes a cell phone as an electronic device provided with the vibrator element described in First Embodiment.
  • FIG. 7 is a schematic perspective view illustrating the cell phone of Fourth Embodiment.
  • a cell phone 700 shown in FIG. 7 is configured to include the vibrator element 1 of First Embodiment as a reference clock oscillation source.
  • the cell phone 700 also includes a liquid crystal display device 701 , a plurality of operation buttons 702 , an earpiece 703 , and a mouthpiece 704 .
  • the vibrator element is not limited to the reference clock oscillation source of the cell phone, and may be preferably used, for example, as the reference clock oscillation source of devices such as digital books, personal computers, televisions, digital still cameras, video cameras, video recorders, navigation devices, pagers, electronic organizers, calculators, word processors, workstations, video phones, POS terminals, and devices equipped with a touch panel.
  • devices such as digital books, personal computers, televisions, digital still cameras, video cameras, video recorders, navigation devices, pagers, electronic organizers, calculators, word processors, workstations, video phones, POS terminals, and devices equipped with a touch panel.
  • a highly reliable electronic device having the effects described in First Embodiment can be provided.
  • FIG. 8 is a schematic perspective view illustrating the automobile of Fifth Embodiment.
  • An automobile 800 uses the vibrator element 1 of First Embodiment, for example, as the reference clock oscillation source of its electronically controlled devices (for example, such as an electronically controlled fuel injection device, an electronically controlled ABS device, and an electronically controlled aotocruise device).
  • electronically controlled devices for example, such as an electronically controlled fuel injection device, an electronically controlled ABS device, and an electronically controlled aotocruise device.
  • the automobile 800 has high reliability, and can exhibit excellent, performance with the effects described in First Embodiment.
  • the vibrator element is not limited to the reference clock oscillation, source of the automobile 800 , and may foe preferably used, for example, as the reference clock oscillation source of moving objects such as self-propelled robots, self-propelled transporting machines, trains, ships, airplanes, and artificial satellites. In any case, a highly reliable moving object having the effects described in First Embodiment can be provided.
  • the vibrator element When, quartz crystal is used as base material of the vibrator element, the vibrator element may be prepared from, for example, a Z-cut plate, or an X-cut plate obtained by cutting quartz crystal ores in a predetermined angle. The etching process becomes easier when Z-cut places of certain characteristics are used.
  • the vibrating direction of the vibrator element is not limited to the Z-axis direction (thickness direction), and the vibrator element may vibrate, for example, in X-axis direction (the direction along the major surface) with the excitation electrodes provided on the side surfaces of the vibrating arms (the surfaces joining the major surfaces). Flexural vibration in this direction is called in-plane vibration.
  • the number of vibrating arms in the vibrator element is not limited to three, and 1, 2, 4, 5, or n (n is a natural number of 6 or more) vibrating arms may be provided.
  • the base portion of the vibrator element may have the same thickness as the vibrating arm. In this way. the vibrator element has a plate shape, and can be produced more easily.

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  • Piezo-Electric Or Mechanical Vibrators, Or Delay Or Filter Circuits (AREA)
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US9461617B2 (en) 2016-10-04

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