US20130208350A1 - Optical semiconductor device - Google Patents

Optical semiconductor device Download PDF

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Publication number
US20130208350A1
US20130208350A1 US13/675,449 US201213675449A US2013208350A1 US 20130208350 A1 US20130208350 A1 US 20130208350A1 US 201213675449 A US201213675449 A US 201213675449A US 2013208350 A1 US2013208350 A1 US 2013208350A1
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United States
Prior art keywords
optical
section
light
semiconductor lasers
semiconductor device
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Abandoned
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US13/675,449
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English (en)
Inventor
Takeshi Saito
Masakazu Takabayashi
Eitaro Ishimura
Tohru Takiguchi
Kazuhisa Takagi
Keisuke Matsumoto
Yoshifumi Sasahata
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Mitsubishi Electric Corp
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Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
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Assigned to MITSUBISHI ELECTRIC CORPORATION reassignment MITSUBISHI ELECTRIC CORPORATION ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). Assignors: TAKIGUCHI, TOHRU, ISHIMURA, EITARO, MATSUMOTO, KEISUKE, SAITO, TAKESHI, SASAHATA, YOSHIFUMI, TAKABAYASHI, MASAKAZU, TAKAGI, KAZUHISA
Publication of US20130208350A1 publication Critical patent/US20130208350A1/en
Priority to US14/210,882 priority Critical patent/US9042008B2/en
Priority to US14/693,942 priority patent/US9147997B2/en
Abandoned legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/026—Monolithically integrated components, e.g. waveguides, monitoring photo-detectors, drivers
    • H01S5/0265—Intensity modulators
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/05—Construction or shape of optical resonators; Accommodation of active medium therein; Shape of active medium
    • H01S3/06—Construction or shape of active medium
    • H01S3/063—Waveguide lasers, i.e. whereby the dimensions of the waveguide are of the order of the light wavelength
    • H01S3/067—Fibre lasers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/026—Monolithically integrated components, e.g. waveguides, monitoring photo-detectors, drivers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/065—Mode locking; Mode suppression; Mode selection ; Self pulsating
    • H01S5/0651—Mode control
    • H01S5/0653—Mode suppression, e.g. specific multimode
    • H01S5/0654—Single longitudinal mode emission
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/12—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H01S5/4025—Array arrangements, e.g. constituted by discrete laser diodes or laser bar
    • H01S5/4031—Edge-emitting structures
    • H01S5/4062—Edge-emitting structures with an external cavity or using internal filters, e.g. Talbot filters
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04B—TRANSMISSION
    • H04B10/00—Transmission systems employing electromagnetic waves other than radio-waves, e.g. infrared, visible or ultraviolet light, or employing corpuscular radiation, e.g. quantum communication
    • H04B10/50—Transmitters
    • H04B10/516—Details of coding or modulation
    • H04B10/54—Intensity modulation
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04B—TRANSMISSION
    • H04B10/00—Transmission systems employing electromagnetic waves other than radio-waves, e.g. infrared, visible or ultraviolet light, or employing corpuscular radiation, e.g. quantum communication
    • H04B10/50—Transmitters
    • H04B10/516—Details of coding or modulation
    • H04B10/548—Phase or frequency modulation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/10—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating
    • H01S3/10053—Phase control
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/10—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating
    • H01S3/106—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating by controlling devices placed within the cavity
    • H01S3/107—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating by controlling devices placed within the cavity using electro-optic devices, e.g. exhibiting Pockels or Kerr effect
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/14—External cavity lasers

Definitions

  • the present invention relates to a wavelength-variable optical semiconductor device used in optical communication systems. Specifically, the present invention relates to an optical semiconductor device wherein the increase of spectral line width due to the reflected light being reflected at the reflecting point present in the device and returning to the semiconductor laser can be inhibited.
  • DWDM Dense Wavelength Division Multiplexing
  • optical signals of about 80 different wavelengths are multiplexed in one fiber.
  • an IM-DD (Intensity Modulation-Direct Detection) system has been used in systems having the signal speed of up to 10 Gbit/s.
  • phase modulation and differential detection methods are used in recently penetrating 40 Gbit/s system.
  • phase modulation systems are used in next-generation 100 Gbit/s systems.
  • signal receiving side a coherent detection system wherein local light and signal light are mixed to detect the intensity and phase information are used.
  • phase noise causes no problems.
  • the phase noise of the signal light source and the local light source causes the deterioration of signal qualities.
  • a spectrum line width is used as the indicator showing the size of the phase noise of the light source, it is required to narrow the spectrum line width for lowering the phase noise.
  • an optical semiconductor device wherein a plurality of semiconductor lasers and optical amplifying sections are accumulated has been reported.
  • any one of a plurality of semiconductor lasers arrayed in parallel is made to flash, and the output light thereof is output from a waveguide via a wave coupling section.
  • By amplifying the output light in the optical amplifying section light having a desired wavelength is output at a desired optical power.
  • the spectrum line width Vo has generally the relationship shown in the following numerical expression 1.
  • the laser length L DFB For realizing a narrow line width, it is desired to lengthen the laser length L DFB . Also in the above described optical semiconductor device wherein the semiconductor lasers and the optical amplifying sections are accumulated, it has been reported that the low line width of 1 MHz or below is realized by lengthening the laser length. However, there are causes to deteriorate the spectrum line width. In the case wherein a reflectivity on the front end surface is limited, the light reflected by the front end surface is again amplified by the optical amplifying section, and the reflected light returns to the semiconductor laser and causes adverse effects.
  • the spectrum line width ⁇ when fed back is represented the following Numerical Expression 2 (for example, refer to IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS, Vol. 15, No. 3, May/Jun 2009, pp. 514-520).
  • the end-face reflectivity cannot be 0, but there is always a limited reflectivity. Therefore, the spectra line widths of a conventional optical semiconductor device wherein semiconductor lasers and optical amplifying sections are accumulated changes periodically depending upon the current values of the semiconductor lasers, and at times, increase causing problems on the system may be caused. Furthermore, when modulators or the like are further accumulated, reflection may occur from each part or the like to constitute the modulators, and similarly, the increase of the spectra line width may be caused.
  • the reflected light returns to the semiconductor laser after the reflected light is amplified in the optical amplifying section. Therefore, there was a problem wherein the increase of the spectra line width is caused depending on the driving current conditions of the semiconductor laser.
  • an object of the present invention is to provide an optical semiconductor device which can inhibit the increase of the spectra line width by the reflected light.
  • an optical semiconductor device includes: a plurality of semiconductor lasers; a wave coupling section multiplexing output light of the plurality of the semiconductor lasers; an optical amplifying section amplifying output light of the wave coupling section; a first optical waveguide respectively optically connecting the plurality of semiconductor lasers to the wave coupling section; a second optical waveguide optically connecting the wave coupling section to the optical amplifying section; a third optical waveguide optically connected to an output of the optical amplifying section; and a phase regulator provided in at least one of the first, second, and third optical waveguides, and regulating a phase of reflected light that is reflected at a reflecting point present in the optical semiconductor device and returns to the plurality of semiconductor lasers.
  • the phase regulator adjusts the phase of the reflected light so as to decrease line width of the output light of the plurality of semiconductor lasers.
  • the present invention makes it possible to inhibit the increase of the spectra line width by the reflected light.
  • FIG. 1 is a top view showing an optical semiconductor device according to the first embodiment of the present invention.
  • FIG. 2 is a top view showing a modified example 1 of the optical semiconductor device according to the first embodiment of the present invention.
  • FIG. 3 is a top view showing a modified example 2.
  • FIG. 4 is a top view showing an optical semiconductor device according to the second embodiment of the present invention.
  • FIG. 5 is a top view showing the modified example of the optical semiconductor device according to the second embodiment of the present invention.
  • FIG. 6 is a top view showing an optical modulator according to the third embodiment of the present invention.
  • FIG. 7 is a top view showing the modified example of the optical semiconductor device according to the third embodiment of the present invention.
  • FIG. 8 is a top view showing an optical semiconductor device according to the fourth embodiment of the present invention.
  • FIG. 9 is a top view showing the modified example of the optical semiconductor device according to the fourth embodiment of the present invention.
  • FIG. 1 is a top view showing an optical semiconductor device according to the first embodiment of the present invention.
  • a plurality of semiconductor lasers 2 On an InP substrate 1 , a plurality of semiconductor lasers 2 , a wave coupling section 3 , an optical amplifying section 4 , optical waveguides 5 a, 5 b, 5 c, and 5 d, and a phase regulator 6 are accumulated.
  • a plurality of semiconductor lasers 2 are the DFB-LD (Distributed Feedback Laser Diode) array.
  • the wave coupling section 3 is an MMI coupler (Multi-Mode Interference).
  • the optical amplifying section 4 is an SOA (Semiconductor Optical Amplifier).
  • a control section 7 controls the bias applied to the phase regulator 6 and controls the phase regulator 6 .
  • the wave coupling section 3 multiplexes the output light of a plurality of the semiconductor lasers 2 .
  • the optical amplifying section 4 amplifies the output light of the wave coupling section 3 .
  • the optical waveguide 5 a is optically connected to the input side of the semiconductor lasers 2 .
  • a plurality of optical waveguides 5 b respectively optically connect a plurality of semiconductor lasers 2 to the wave coupling section 3 .
  • the optical waveguide 5 c optically connects the wave coupling section 3 to the optical amplifying section 4 .
  • the optical waveguide 5 d is optically connected to the output of the optical amplifying section 4 .
  • the phase regulator 6 is provided in the optical waveguide 5 d, and specifically, an electrode to which a bias is applied to the upper portion of the optical waveguide 5 d is provided.
  • the phase regulator 6 regulates the phase of the light that is reflected at reflecting points present in the device and returns to a plurality of semiconductor lasers 2 .
  • control section 7 adjusts the bias applied to the phase regulator 6 , and makes the phase regulator 6 adjust the phase of the reflected light so as to decrease the line width of the output light of a plurality of semiconductor lasers 2 . Thereby, the increase of the spectra line width by the reflected light can be inhibited.
  • FIG. 2 is a top view showing a modified example 1 of the optical semiconductor device according to the first embodiment of the present invention.
  • FIG. 3 is a top view showing a modified example 2.
  • an optical modulator 8 is optically connected to the output of the optical amplifying section 4 .
  • the phase regulator 6 is provided between the optical amplifying section 4 and the optical modulator 8 .
  • the phase regulator 6 is provided in the optical waveguide 5 e in the output side of the optical modulator 8 . In these cases, an effect similar to the effect of the first embodiment can also be obtained.
  • the optical waveguide 5 a can be omitted.
  • the layer constructions of the optical waveguides 5 a, 5 b, 5 c, and 5 d can be identical to the semiconductor laser 2 or the optical amplifying section 4 , or can be butt-jointed waveguides having different construction and configuration.
  • the optical modulator 8 can be a plurality of optical modulators connected in series.
  • FIG. 4 is a top view showing an optical semiconductor device according to the second embodiment of the present invention.
  • the phase regulator 6 is provided in the optical waveguide 5 c. In this case also, an effect similar to that in the first embodiment can be obtained.
  • FIG. 5 is a top view showing the modified example of the optical semiconductor device according to the second embodiment of the present invention.
  • the optical modulator 8 is optically connected to the output of the optical amplifying section 4 . In this case also, an effect similar to that in the first embodiment can be obtained.
  • FIG. 6 is a top view showing an optical modulator according to the third embodiment of the present invention.
  • a plurality of phase regulators 6 are respectively provided in a plurality of optical waveguides 5 b. In this case also, an effect similar to that in the first embodiment can be obtained.
  • FIG. 7 is a top view showing the modified example of the optical semiconductor device according to the third embodiment of the present invention.
  • the optical modulator 8 is optically connected to the output of the optical amplifying section 4 . In this case also, an effect similar to that in the first embodiment can be obtained.
  • phase regulators 6 are respectively provided in the optical waveguides 5 d, 5 c, and 5 b, the present invention is not limited thereto, but the phase regulator 6 is not limited thereto, but the phase regulator 6 may be provided in at least one of the optical wave guides 5 b, 5 c, and 5 d.
  • FIG. 8 is a top view showing an optical semiconductor device according to the fourth embodiment of the present invention.
  • a light intensity lowering section 9 to lower the light intensity of the reflected light is provided in the optical waveguide 5 b.
  • the layer configuration of the light intensity lowering section 9 is identical to the layer configuration of the phase regulator 6 .
  • the control section 7 supplies a larger bias to the light intensity lowering section 9 than to the phase regulator 6 , and positively generates light absorption.
  • the intensity of the light inputted from the semiconductor lasers 2 to the optical amplifying section 4 is lowered.
  • the saturation of the gain occurs.
  • the reflected light from the reflection point in the device on the front end surface or on the side nearer to the front end surface than the optical amplifying section 4 is amplified by the optical amplifying section 4 , and returns to the semiconductor laser 2 .
  • the light intensity lowering section 9 lowers the light intensity of the reflected light. Therefore, the effect of the reflected light on the semiconductor laser 2 is weakened, and the line width of output light of a plurality of semiconductor lasers 2 is decreased. Therefore, the control section 7 adjusts the bias applied to the light intensity lowering section 9 , and makes the light intensity lowering section 9 lower the light intensity of the reflected light so that the line width of the output light. Thereby, the increase of the spectrum line width by the reflected light can be inhibited.
  • the bias point in addition to the effect by the above-described absorption, the bias point to be the most suitable in the points of the phase must be searched. Furthermore, the optical waveguide 5 a or the optical modulator 8 can be omitted.
  • FIG. 9 is a top view showing the modified example of the optical semiconductor device according to the fourth embodiment of the present invention.
  • phase regulators 6 are respectively provided in the optical waveguides 5 c, 5 d, and 5 e.
  • the phase regulators 6 can also be provided in only one or two of the optical waveguides 5 c, 5 d, and 5 e.
  • the control section 7 adjusts the bias applied to these phase regulators 6 , and makes the phase regulators 6 adjust the phase of the reflected light so that the line width of the output light of a plurality of semiconductor lasers 2 is decreased.
  • an electrical resistor can be provided on the electrode of the phase regulator 6 or the light intensity lowering section 9 to make the resistor produce heat as a heater.
  • a forward/reverse bias is not applied to the phase regulator 6 and the light intensity lowering section 9 to change the reflectivity, but their temperatures are varied to change the reflectivity.
  • the same effects of the above-described first to fourth embodiments can be obtained.

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  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Networks & Wireless Communication (AREA)
  • Signal Processing (AREA)
  • Plasma & Fusion (AREA)
  • Semiconductor Lasers (AREA)
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US20150063740A1 (en) * 2013-08-30 2015-03-05 Mitsubishi Electric Corporation Wavelength variable light source and wavelength variable light source module
US9042008B2 (en) 2012-02-15 2015-05-26 Mitsubishi Electric Corporation Optical semiconductor device
CN110213467A (zh) * 2019-05-27 2019-09-06 中国科学院国家空间科学中心 一种多尺度调制压缩感知成像系统及其成像方法
US20210391694A1 (en) * 2018-12-25 2021-12-16 Mitsubishi Electric Corporation Optical transmission apparatus
US20230251417A1 (en) * 2020-07-03 2023-08-10 Mitsubishi Electric Corporation Semiconductor optical integrated element

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JP6540097B2 (ja) * 2015-02-27 2019-07-10 富士通株式会社 波長可変レーザ装置
JP6369946B2 (ja) * 2015-08-10 2018-08-08 日本電信電話株式会社 狭線幅波長可変半導体レーザ
JP2017188596A (ja) * 2016-04-07 2017-10-12 三菱電機株式会社 光モジュール
JP7077549B2 (ja) * 2017-09-06 2022-05-31 日本電信電話株式会社 多波長光源
JP7302430B2 (ja) * 2019-10-24 2023-07-04 富士通株式会社 波長可変光源、これを用いた光伝送装置、及び波長可変光源の制御方法
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US20240061279A1 (en) * 2021-05-13 2024-02-22 Mitsubishi Electric Corporation Optical semiconductor device

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