JP2013168500A - 光半導体装置 - Google Patents

光半導体装置 Download PDF

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Publication number
JP2013168500A
JP2013168500A JP2012030779A JP2012030779A JP2013168500A JP 2013168500 A JP2013168500 A JP 2013168500A JP 2012030779 A JP2012030779 A JP 2012030779A JP 2012030779 A JP2012030779 A JP 2012030779A JP 2013168500 A JP2013168500 A JP 2013168500A
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JP
Japan
Prior art keywords
optical
unit
light
semiconductor lasers
output
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Pending
Application number
JP2012030779A
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English (en)
Japanese (ja)
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JP2013168500A5 (enExample
Inventor
Takeshi Saito
健 斎藤
Masakazu Takabayashi
正和 高林
Eitaro Ishimura
栄太郎 石村
Toru Takiguchi
透 瀧口
Kazuhisa Takagi
和久 高木
Keisuke Matsumoto
啓資 松本
Keiji Sasahata
圭史 笹畑
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
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Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP2012030779A priority Critical patent/JP2013168500A/ja
Priority to US13/675,449 priority patent/US20130208350A1/en
Publication of JP2013168500A publication Critical patent/JP2013168500A/ja
Priority to US14/210,882 priority patent/US9042008B2/en
Publication of JP2013168500A5 publication Critical patent/JP2013168500A5/ja
Priority to US14/693,942 priority patent/US9147997B2/en
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/026—Monolithically integrated components, e.g. waveguides, monitoring photo-detectors, drivers
    • H01S5/0265—Intensity modulators
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/05—Construction or shape of optical resonators; Accommodation of active medium therein; Shape of active medium
    • H01S3/06—Construction or shape of active medium
    • H01S3/063—Waveguide lasers, i.e. whereby the dimensions of the waveguide are of the order of the light wavelength
    • H01S3/067—Fibre lasers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/026—Monolithically integrated components, e.g. waveguides, monitoring photo-detectors, drivers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/065—Mode locking; Mode suppression; Mode selection ; Self pulsating
    • H01S5/0651—Mode control
    • H01S5/0653—Mode suppression, e.g. specific multimode
    • H01S5/0654—Single longitudinal mode emission
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/12—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H01S5/4025—Array arrangements, e.g. constituted by discrete laser diodes or laser bar
    • H01S5/4031—Edge-emitting structures
    • H01S5/4062—Edge-emitting structures with an external cavity or using internal filters, e.g. Talbot filters
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04B—TRANSMISSION
    • H04B10/00—Transmission systems employing electromagnetic waves other than radio-waves, e.g. infrared, visible or ultraviolet light, or employing corpuscular radiation, e.g. quantum communication
    • H04B10/50—Transmitters
    • H04B10/516—Details of coding or modulation
    • H04B10/54—Intensity modulation
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04B—TRANSMISSION
    • H04B10/00—Transmission systems employing electromagnetic waves other than radio-waves, e.g. infrared, visible or ultraviolet light, or employing corpuscular radiation, e.g. quantum communication
    • H04B10/50—Transmitters
    • H04B10/516—Details of coding or modulation
    • H04B10/548—Phase or frequency modulation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/10—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating
    • H01S3/10053—Phase control
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/10—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating
    • H01S3/106—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating by controlling devices placed within the cavity
    • H01S3/107—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating by controlling devices placed within the cavity using electro-optic devices, e.g. exhibiting Pockels or Kerr effect
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/14—External cavity lasers

Landscapes

  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Networks & Wireless Communication (AREA)
  • Signal Processing (AREA)
  • Plasma & Fusion (AREA)
  • Semiconductor Lasers (AREA)
JP2012030779A 2012-02-15 2012-02-15 光半導体装置 Pending JP2013168500A (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2012030779A JP2013168500A (ja) 2012-02-15 2012-02-15 光半導体装置
US13/675,449 US20130208350A1 (en) 2012-02-15 2012-11-13 Optical semiconductor device
US14/210,882 US9042008B2 (en) 2012-02-15 2014-03-14 Optical semiconductor device
US14/693,942 US9147997B2 (en) 2012-02-15 2015-04-23 Optical semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2012030779A JP2013168500A (ja) 2012-02-15 2012-02-15 光半導体装置

Publications (2)

Publication Number Publication Date
JP2013168500A true JP2013168500A (ja) 2013-08-29
JP2013168500A5 JP2013168500A5 (enExample) 2015-01-29

Family

ID=48945365

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2012030779A Pending JP2013168500A (ja) 2012-02-15 2012-02-15 光半導体装置

Country Status (2)

Country Link
US (3) US20130208350A1 (enExample)
JP (1) JP2013168500A (enExample)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2016162828A (ja) * 2015-02-27 2016-09-05 富士通株式会社 波長可変レーザ装置
JP2017037971A (ja) * 2015-08-10 2017-02-16 日本電信電話株式会社 狭線幅波長可変半導体レーザ
JP2017188596A (ja) * 2016-04-07 2017-10-12 三菱電機株式会社 光モジュール
JP2019047053A (ja) * 2017-09-06 2019-03-22 日本電信電話株式会社 多波長光源
JP6989068B1 (ja) * 2021-05-13 2022-01-05 三菱電機株式会社 光半導体装置

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2013168500A (ja) 2012-02-15 2013-08-29 Mitsubishi Electric Corp 光半導体装置
JP6320192B2 (ja) * 2013-08-30 2018-05-09 三菱電機株式会社 波長可変光源および波長可変光源モジュール
JP6956883B2 (ja) * 2018-12-25 2021-11-02 三菱電機株式会社 光送信装置
CN110213467B (zh) * 2019-05-27 2020-10-23 中国科学院国家空间科学中心 一种多尺度调制压缩感知成像系统及其成像方法
JP7302430B2 (ja) * 2019-10-24 2023-07-04 富士通株式会社 波長可変光源、これを用いた光伝送装置、及び波長可変光源の制御方法
JP6910568B1 (ja) * 2020-07-03 2021-07-28 三菱電機株式会社 半導体光集積素子
CN116349097B (zh) * 2020-11-24 2025-07-15 三菱电机株式会社 光半导体装置

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JPS63234218A (ja) * 1987-03-23 1988-09-29 Fujitsu Ltd 光変調増幅装置
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JPH02159786A (ja) * 1988-12-14 1990-06-19 Hitachi Ltd レーザ装置及び周波数多重光通信システム
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Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2016162828A (ja) * 2015-02-27 2016-09-05 富士通株式会社 波長可変レーザ装置
JP2017037971A (ja) * 2015-08-10 2017-02-16 日本電信電話株式会社 狭線幅波長可変半導体レーザ
JP2017188596A (ja) * 2016-04-07 2017-10-12 三菱電機株式会社 光モジュール
JP2019047053A (ja) * 2017-09-06 2019-03-22 日本電信電話株式会社 多波長光源
JP7077549B2 (ja) 2017-09-06 2022-05-31 日本電信電話株式会社 多波長光源
JP6989068B1 (ja) * 2021-05-13 2022-01-05 三菱電機株式会社 光半導体装置
WO2022239208A1 (ja) * 2021-05-13 2022-11-17 三菱電機株式会社 光半導体装置

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US9042008B2 (en) 2015-05-26
US20150229407A1 (en) 2015-08-13
US20130208350A1 (en) 2013-08-15
US9147997B2 (en) 2015-09-29
US20140198378A1 (en) 2014-07-17

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