JPS6454789A - External resonance type semiconductor laser - Google Patents

External resonance type semiconductor laser

Info

Publication number
JPS6454789A
JPS6454789A JP21209587A JP21209587A JPS6454789A JP S6454789 A JPS6454789 A JP S6454789A JP 21209587 A JP21209587 A JP 21209587A JP 21209587 A JP21209587 A JP 21209587A JP S6454789 A JPS6454789 A JP S6454789A
Authority
JP
Japan
Prior art keywords
layer
type semiconductor
semiconductor laser
face
resonance type
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP21209587A
Other languages
Japanese (ja)
Inventor
Yasushi Matsui
Jiyun Otani
Tomoaki Uno
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP21209587A priority Critical patent/JPS6454789A/en
Publication of JPS6454789A publication Critical patent/JPS6454789A/en
Pending legal-status Critical Current

Links

Landscapes

  • Semiconductor Lasers (AREA)

Abstract

PURPOSE:To obtain a stable oscillation for a returning light by discovering an output light from the end face of an external resonator. CONSTITUTION:A light generated by implanting a current between electrodes 6a and 6b is laser-oscillated with a photoconductive layer 4 as an external resonator. An output light L is produced from a lens 11 from a cleaved face 8b formed at one end of the layer 4, and coupled through an isolator 12 to a fiber or the like. The reflecting returning light of the remote or near end of the isolator 12 is largely attenuated by an attenuation at the end face 8b of the layer 4, an attenuation due to the propagation of the layer 4, and an attenuation due to the coupling of the layer 4 to an active layer 3, thereby performing a stable oscillation.
JP21209587A 1987-08-26 1987-08-26 External resonance type semiconductor laser Pending JPS6454789A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP21209587A JPS6454789A (en) 1987-08-26 1987-08-26 External resonance type semiconductor laser

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP21209587A JPS6454789A (en) 1987-08-26 1987-08-26 External resonance type semiconductor laser

Publications (1)

Publication Number Publication Date
JPS6454789A true JPS6454789A (en) 1989-03-02

Family

ID=16616794

Family Applications (1)

Application Number Title Priority Date Filing Date
JP21209587A Pending JPS6454789A (en) 1987-08-26 1987-08-26 External resonance type semiconductor laser

Country Status (1)

Country Link
JP (1) JPS6454789A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2013168500A (en) * 2012-02-15 2013-08-29 Mitsubishi Electric Corp Optical semiconductor device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2013168500A (en) * 2012-02-15 2013-08-29 Mitsubishi Electric Corp Optical semiconductor device

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