JP6956883B2 - 光送信装置 - Google Patents
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- H01S5/02—Structural details or components not essential to laser action
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- H01S5/0265—Intensity modulators
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- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
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- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
- H01S5/2205—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure comprising special burying or current confinement layers
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- H01S5/227—Buried mesa structure ; Striped active layer
- H01S5/2275—Buried mesa structure ; Striped active layer mesa created by etching
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Description
図1を参照して、実施の形態1の光送信装置1の構成を説明する。光送信装置1は、第1多値光位相変調部10と、第1半導体光増幅部30とを主に備える。光送信装置1は、レーザ光源3をさらに備える。第1多値光位相変調部10及び第1半導体光増幅部30は、一枚の半導体基板8上に形成されてもよい。半導体基板8は、例えば、Fe添加InP基板のような半絶縁性半導体基板、または、n型InP基板のようなn型半導体基板である。
本実施の形態の光送信装置1は、第1多値光位相変調部10と、第1半導体光増幅部30とを備える。第1半導体光増幅部30は、第1多値光位相変調部10から出力された第1信号光(信号光5)を増幅する。第1半導体光増幅部30は、第1活性領域32を含む。第1活性領域32は、複数の第1井戸層32aを含む第1多重量子井戸構造を含む。複数の第1井戸層32aの第1層数をn1とし、第1活性領域32の第1長さをL1(μm)とすると、(a)n1=5、かつ、400≦L1≦563、または、(b)n1=6、かつ、336≦L1≦470、または、(c)n1=7、かつ、280≦L1≦432、または、(d)n1=8、かつ、252≦L1≦397、または、(e)n1=9、かつ、224≦L1≦351、または、(f)n1=10、かつ、200≦L1≦297である。そのため、光送信装置1から出力される光信号の品質と強度を向上させることができる。
図13を参照して、実施の形態2に係る光送信装置1bを説明する。本実施の形態の光送信装置1bは、実施の形態1の光送信装置1と同様の構成を備えるが、主に以下の点で異なる。本実施の形態では、第1多値光位相変調部10及び第1半導体光増幅部30に加えて、半導体レーザであるレーザ光源3も、一枚の半導体基板8上に形成されている。
図14を参照して、実施の形態3に係る光送信装置1cを説明する。本実施の形態の光送信装置1cは、実施の形態1の光送信装置1と同様の構成を備えるが、主に以下の点で異なる。
図17を参照して、実施の形態4に係る光送信装置1dを説明する。本実施の形態の光送信装置1dは、実施の形態3の光送信装置1cと同様の構成を備えるが、主に以下の点で異なる。本実施の形態では、第1多値光位相変調部10、第2多値光位相変調部50、第1半導体光増幅部30及び第2半導体光増幅部60に加えて、半導体レーザであるレーザ光源3も、一枚の半導体基板8上に形成されている。
Claims (11)
- 第1多値光位相変調部と、
前記第1多値光位相変調部から出力された第1信号光を増幅する第1半導体光増幅部とを備える光送信装置であって、
前記第1半導体光増幅部は、n−InPからなるn型半導体層と、一対の光閉じ込め層と、第1活性領域と、p−InPからなるp型半導体層と、n−InPまたはFe添加InPからなる電流ブロック層と、p−InGaAsからなるp型コンタクト層と、n型電極と、p型電極とを含み、前記第1活性領域は、アンドープのInGaAsPからなる複数の第1井戸層とアンドープのInGaAsPからなる複数の障壁層とを含む第1多重量子井戸構造を含み、
前記第1活性領域の両側は、前記第1活性領域に接する前記電流ブロック層で埋め込まれており、
前記電流ブロック層は、n−InP層またはFe添加InP層であり、
前記複数の第1井戸層の第1層数をn1とし、前記第1活性領域の第1長さをL1(μm)とすると、
n1=5、かつ、400≦L1≦563、または、
n1=6、かつ、336≦L1≦470、または、
n1=7、かつ、280≦L1≦432、または、
n1=8、かつ、252≦L1≦397、または、
n1=9、かつ、224≦L1≦351、または、
n1=10、かつ、200≦L1≦297の条件を満たし、
前記第1半導体光増幅部は、8dB以上の利得を有し、
前記光送信装置は、10%以下のエラーベクトル振幅を有する光信号を出力する、光送信装置。 - n1=5、かつ、500≦L1≦563、または、
n1=6、かつ、420≦L1≦470、または、
n1=7、かつ、350≦L1≦432、または、
n1=8、かつ、315≦L1≦397、または、
n1=9、かつ、280≦L1≦351、または、
n1=10、かつ、250≦L1≦297である、請求項1に記載の光送信装置。 - n1=5、かつ、400≦L1≦500、または、
n1=6、かつ、336≦L1≦400、または、
n1=7、かつ、300≦L1≦400、または、
n1=8、かつ、300≦L1≦397である、請求項1に記載の光送信装置。 - 前記第1半導体光増幅部は、前記第1半導体光増幅部の利得飽和領域で動作するように制御されている、請求項1から請求項3のいずれか一項に記載の光送信装置。
- 前記第1多値光位相変調部へ光を出力する半導体レーザをさらに備え、
前記第1多値光位相変調部、前記第1半導体光増幅部及び前記半導体レーザは、一枚の半導体基板上に形成されている、請求項1から請求項4のいずれか一項に記載の光送信装置。 - 光入力部と、第1光出力部と、第2光出力部とを含む光分波部と、
第2多値光位相変調部と、
前記第2多値光位相変調部から出力された第2信号光を増幅する第2半導体光増幅部とをさらに備え、
前記第1多値光位相変調部は、前記第1光出力部に光学的に接続されており、
前記第2多値光位相変調部は、前記第2光出力部に光学的に接続されており、
前記第2半導体光増幅部は第2活性領域を含み、前記第2活性領域は複数の第2井戸層を含む第2多重量子井戸構造を含み、
前記複数の第2井戸層の第2層数をn2とし、前記第2活性領域の第2長さをL2(μm)とすると、
n2=5、かつ、400≦L2≦563、または、
n2=6、かつ、336≦L2≦470、または、
n2=7、かつ、280≦L2≦432、または、
n2=8、かつ、252≦L2≦397、または、
n2=9、かつ、224≦L2≦351、または、
n2=10、かつ、200≦L2≦297である、請求項1から請求項4のいずれか一項に記載の光送信装置。 - n2=5、かつ、500≦L2≦563、または、
n2=6、かつ、420≦L2≦470、または、
n2=7、かつ、350≦L2≦432、または、
n2=8、かつ、315≦L2≦397、または、
n2=9、かつ、280≦L2≦351、または、
n2=10、かつ、250≦L2≦297である、請求項6に記載の光送信装置。 - n2=5、かつ、400≦L2≦500、または、
n2=6、かつ、336≦L2≦400、または、
n2=7、かつ、300≦L2≦400、または、
n2=8、かつ、300≦L2≦397である、請求項6に記載の光送信装置。 - 前記第2層数n2は、前記第1層数n1に等しく、
前記第2長さL2(μm)は、前記第1長さL1(μm)に等しい、請求項6から請求項8のいずれか一項に記載の光送信装置。 - 前記第2半導体光増幅部は、前記第2半導体光増幅部の利得飽和領域で動作するように制御されている、請求項6から請求項9のいずれか一項に記載の光送信装置。
- 前記光入力部へ光を出力する半導体レーザをさらに備え、
前記第1多値光位相変調部、前記第1半導体光増幅部、前記光分波部及び前記半導体レーザは、一枚の半導体基板上に形成されている、請求項6から請求項10のいずれか一項に記載の光送信装置。
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JPH05291689A (ja) * | 1992-04-15 | 1993-11-05 | Sharp Corp | 半導体レーザ装置 |
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JPH05291690A (ja) * | 1992-04-15 | 1993-11-05 | Sharp Corp | 半導体レーザ装置 |
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