US20130032768A1 - Phosphor-nanoparticle combinations - Google Patents

Phosphor-nanoparticle combinations Download PDF

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US20130032768A1
US20130032768A1 US13/575,871 US201113575871A US2013032768A1 US 20130032768 A1 US20130032768 A1 US 20130032768A1 US 201113575871 A US201113575871 A US 201113575871A US 2013032768 A1 US2013032768 A1 US 2013032768A1
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snp
phosphor
cds
material composition
zns
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Hagai Arbell
Assaf Aharoni
Uri Banin
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Yissum Research Development Co of Hebrew University of Jerusalem
Qlight Nanotech Ltd
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    • C09K11/08—Luminescent materials, e.g. electroluminescent or chemiluminescent containing inorganic luminescent materials
    • C09K11/88—Luminescent materials, e.g. electroluminescent or chemiluminescent containing inorganic luminescent materials containing selenium, tellurium or unspecified chalcogen elements
    • C09K11/881—Chalcogenides
    • C09K11/883—Chalcogenides with zinc or cadmium
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    • C09K11/02—Use of particular materials as binders, particle coatings or suspension media therefor
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K11/00—Luminescent materials, e.g. electroluminescent or chemiluminescent
    • C09K11/02—Use of particular materials as binders, particle coatings or suspension media therefor
    • C09K11/025—Use of particular materials as binders, particle coatings or suspension media therefor non-luminescent particle coatings or suspension media
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
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    • C09K11/00—Luminescent materials, e.g. electroluminescent or chemiluminescent
    • C09K11/08—Luminescent materials, e.g. electroluminescent or chemiluminescent containing inorganic luminescent materials
    • C09K11/56—Luminescent materials, e.g. electroluminescent or chemiluminescent containing inorganic luminescent materials containing sulfur
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
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    • C09K11/00—Luminescent materials, e.g. electroluminescent or chemiluminescent
    • C09K11/08—Luminescent materials, e.g. electroluminescent or chemiluminescent containing inorganic luminescent materials
    • C09K11/56—Luminescent materials, e.g. electroluminescent or chemiluminescent containing inorganic luminescent materials containing sulfur
    • C09K11/562—Chalcogenides
    • C09K11/565—Chalcogenides with zinc cadmium
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    • C09K11/00—Luminescent materials, e.g. electroluminescent or chemiluminescent
    • C09K11/08—Luminescent materials, e.g. electroluminescent or chemiluminescent containing inorganic luminescent materials
    • C09K11/77—Luminescent materials, e.g. electroluminescent or chemiluminescent containing inorganic luminescent materials containing rare earth metals
    • C09K11/7706—Aluminates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/851—Wavelength conversion means
    • H10H20/8511—Wavelength conversion means characterised by their material, e.g. binder
    • H10H20/8512—Wavelength conversion materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/851—Wavelength conversion means
    • H10H20/8514—Wavelength conversion means characterised by their shape, e.g. plate or foil
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S977/00—Nanotechnology
    • Y10S977/70—Nanostructure
    • Y10S977/773—Nanoparticle, i.e. structure having three dimensions of 100 nm or less
    • Y10S977/774—Exhibiting three-dimensional carrier confinement, e.g. quantum dots
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S977/00—Nanotechnology
    • Y10S977/70—Nanostructure
    • Y10S977/778—Nanostructure within specified host or matrix material, e.g. nanocomposite films
    • Y10S977/779—Possessing nanosized particles, powders, flakes, or clusters other than simple atomic impurity doping
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S977/00—Nanotechnology
    • Y10S977/902—Specified use of nanostructure
    • Y10S977/932—Specified use of nanostructure for electronic or optoelectronic application
    • Y10S977/949—Radiation emitter using nanostructure
    • Y10S977/95—Electromagnetic energy

Definitions

  • Embodiments of the invention relate in general to lighting devices which include light conversion materials and in particular to light conversion materials for use in lighting devices comprising light emitting diodes (LEDs), where the conversion materials include combinations of semiconductor nanoparticles and phosphors based on rare-earth elements for light conversion and light conditioning.
  • LEDs light emitting diodes
  • LEDs offer significant advantages over incandescent and fluorescent lamps with respect to their high energy efficiency and long lifetimes. LEDs are applicable in diverse applications including displays, automobile and signage lighting and domestic and street lighting. A LED can emit monochromatic light in different regions of the spectrum, depending on the inorganic semiconductor compound used to fabricate it. However, “white” light, which is required for a very large portion of the lighting industry, cannot be generated using a conventional LED. Current solutions of producing white light include the use of three or more LEDs with various colors (e.g. Red, Green and Blue or “RGB”), or the use of a color conversion layer of phosphor material (e.g. Cerium:YAG) to generate a broad white spectral emission from the ultraviolet (UV) or blue emission of a LED. However, such white light is almost always non-ideal and has in many cases undesired or unpleasant characteristics which may require improvement or correction.
  • RGB Red, Green and Blue
  • FWHM narrow FWHM spectrum emission
  • FWHM typically ⁇ 30 nm the range of chromaticities that can be obtained by mixing three colours.
  • the solution of using three or more different LED is expensive and complicated for some applications. Therefore it is desirable to have a light source that provides large gamut coverage with one type of LED.
  • One method for utilizing LEDs to provide a broad-spectrum light source utilizes phosphors which convert the LED light to light having longer wavelengths in a broad spectrum. For example, a phosphor that emits light over a broad range of green wavelengths can be illuminated with blue from an LED that generates a narrow blue spectrum. The phosphor-generated green light is then used as a component of the white light source.
  • a broad-spectrum white light source By combining several phosphors, one can, in principle, create a broad-spectrum white light source provided the light conversion efficiencies of the phosphors are sufficiently high. More details can be found in “Status and prospects for phosphor-based white LED Packaging”, Z. Liu et al., Xiaobing Front. Optoelectron. China 2009, 2(2): 119-140.
  • U.S. Pat. Nos. 7,102,152 7,495,383 and 7,318,651 which are incorporated herein by reference in their entirety, disclose devices and methods for emitting output light utilizing both quantum dots (QD) and non-quantum fluorescent materials to convert at least some of the original light emitted from a light source of the device to longer wavelength light to change the colour characteristics of the output light.
  • QD have high QY and narrow emission spectrum with a central emission wavelength (CWL) tunable by size.
  • CWL central emission wavelength
  • Combining both QD and phosphor can enhance the light quality.
  • QD additives can offer improvement, but they suffer from high self absorbance, i.e. they absorb light that is emitted when excited. This lowers their total energy efficiency as light convertors.
  • the QD also re-absorbs the phosphor emission, which reduces the energetic efficiency and also shifts the output spectrum such that rational color planning is very difficult.
  • FRET Fluorescence Resonant Energy Transfer
  • the efficiency of the FRET process depends on the spectral overlap of the absorption of the donor with the emission of the acceptor.
  • the FRET distance between quantum dots is typically 10 nm or smaller.
  • the efficiency of the FRET process is very sensitive to distance. FRET leads to colour change (red shift) and losses in the efficiency of light conversion. Hence, in prior work efforts were made to avoid clustering of QDs in light conversion materials.
  • FIG. 1 show schematic illustrations of known core/shell particles.
  • FIG. 1A illustrates a QD in which a substantially spherical shell coats a symmetrically located and similarly spherical core.
  • FIG. 1A illustrates a QD in which a substantially spherical shell coats a symmetrically located and similarly spherical core.
  • nanorod rod shaped
  • RSNP rod shaped SNP
  • the term nanorod refers to a nanocrystal having a rod-like shape, i.e. a nanocrystal formed by extended growth along a first (“length”) axis of the crystal with very small dimensions maintained along the other two axes.
  • a nanorod has a very small (typically less than 10 nm) diameter and a length which may range from about 6 nm to about 500 nm.
  • FIG. 1C illustrates a QD in which a substantially spherical shell coats a symmetrically located and similarly spherical core.
  • the overall particle diameter is d 2 , much larger than the core diameter d 1 .
  • the magnitude of d 2 compared with d 1 affects the optical absorbance of the core/shell NP.
  • a SNP may include additional external shells which can provide better optical and chemical properties such as higher quantum yield (QY) and better durability.
  • QY quantum yield
  • the combination may be tuned to provide emitting colors as required for the application.
  • the length of the first shell can range in general between 10 nm and 200 nm and in particular between 15 nm and 160 nm.
  • the thicknesses of the first shell in the other two dimensions may range between 1 nm and 10 nm.
  • the thickness of additional shells may range in general between 0.3 nm and 20 nm and in particular between 0.5 nm and 10 nm.
  • Embodiments of the invention disclose materials or compositions of material (also referred to as combinations or mixtures) which combine at least one phosphor species with at least one species of a semiconductor nanoparticle, specifically a SNP or RSNP.
  • phosphor-SNP combination means any combination which combines at least one with at least one phosphor type (“species”) with at least one SNP or RSNP species.
  • the resulting material can be a bulk material, a powder material, a thick or thin film material, self-supporting, incorporated in or combined with a matrix, and/or including added materials such as ligands.
  • the term “phosphor” refers to a fluorescent material present in a particulate form with an emitting center being usually an atom or ion species of a rare-earth element such as Ce, Eu or Er or others.
  • Examples of common phosphors include Garnet-based phosphors, Silicate-based phosphors, Orthosilicate-based phosphors, Thiogallate-based phosphors, Sulfide-based phosphors and Nitride-based phosphors.
  • Phosphor particles which can be used in combinations of the invention do not exhibit effects of quantum confinement.
  • Non-quantum confined phosphor particles may be phosphor particles with or without a silica coating.
  • SNPs in general and RSNPs in particular have superior optical properties which render them a much better choice for combining with phosphors in lighting applications.
  • the inventors have found that using a phosphor-SNP and phosphor-RSNP combinations of the invention, re-absorption effects of the phosphor emission by the SNP and self absorption of the SNP emission by SNP are small, leading to controlled color and high efficiency.
  • RSNPs have very low photoluminescence (PL) self-absorbance and also small absorbance of the phosphor emission and thus are more energy efficient, especially in optically dense layers.
  • a phosphor-SNP and phosphor-RSNP combination of the invention has low self absorption and re-absorption.
  • the SNP/RSNP material is combined with a phosphor material such as listed above forming a mixture in weight percentage of 0.1-10% of SNP or RSNP relative to the phosphor.
  • This mixture can be further inserted into a host material, typically silicone, with a 5-50% mix of conversion material to encapsulant by weight, according to the desired optical characteristic of the application.
  • a layer comprising a phosphor-SNP or phosphor-RSNP combination is used to modulate the emission spectrum of a light source.
  • the light source is a LED.
  • a SNP-phosphor mixture may be include a layered structure comprising at least one phosphor layer and at least one SNP or RSNP layer.
  • Various SNP and RSNP light conversion layers are disclosed in a co-pending PCT patent application by the same inventors titled “Lighting device with prescribed color emission”, filed simultaneously with this application, which claims the same priority as this application and which is incorporated herein by reference in its entirety.
  • the phosphor layer may include a single phosphor species (“type”) or a mixture of several phosphor species.
  • the phosphor layer may include a plurality of sub-layers, each sub-layer including a different phosphor species.
  • a phosphor layer may have a minimum thickness limited by the size of the phosphor particles.
  • the SNP/RSNP layer may include a single type of SNP or RSNPs, a mixture of several SNP or RSNP species or a plurality of sub-layers, each sub-layer including a different SNP or RSNP species.
  • the layered structure may comprise alternating layers of phosphors and RSNP.
  • the thickness of a RSNP layer (without phosphor) may be smaller than 500 ⁇ m, better even smaller than 50 ⁇ m, or, for a densely-packed layer, smaller than 1 ⁇ m and even smaller than 0.2 ⁇ m.
  • the thickness of a mixed phosphor-SNP layer can range from a few millimetres to tens of microns or even to a few microns, mainly constrained by the phosphor particle size and the required optical characteristics.
  • a single layer or a layered structure can be formed on the LED.
  • the layer or layered structure may be a separate and distinct layer or layered structure, placed directly on the LED or spaced from the LED by air, vacuum, or a filler material.
  • the filler material for example silicone or epoxy
  • the modulation of the LED emission spectrum may be for illumination purposes, in order to produce broad-spectrum colour output light, for example “white” light, having a high colour rendering index (CRI) and the desired correlated colour temperature (CCT).
  • the broad-spectrum colour output light is produced by converting some of the original light generated by the LED into longer wavelength light. Adding power or intensity to Red is important for obtaining “warmer” light with lower CCT (e.g. 2700-3500K), but “smoothing” specific regions in the spectrum such in the transition from blue to green can also improve the CRI.
  • the modulation of the LED illumination may also be used for optical display purposes.
  • the invented lighting conversion materials are also of use in agricultural applications of specific lighting demands and other areas of applications of lighting.
  • FIG. 1 is a schematic illustration of known core/shell particles: (A) core QD/shell QD; (B) RSNP; (C) SNP;
  • FIG. 2 shows a comparison of optical absorption and emission at around 600 nm between rod-shaped RSNP and spherical shaped QD materials.
  • FIG. 3 shows normalized absorption curves of three types of RSNP layers prepared according to methods described below and comprising in each case red emitting RSNPs (CdSe/CdS) having different overall dimensions and nearly similar emission spectra
  • FIG. 4A shows schematically micron and submicron beads of RSNP inserted in a compatible host A
  • FIG. 4B shows schematically the beads of FIG. 4A embedded in combination with phosphor particles in a host B, exemplarily silicone.
  • FIG. 5A shows schematically a lighting device according to an embodiment of the invention, in which improved white light is produced by a single layer comprising a phosphor-SNP combination;
  • FIG. 5B shows schematically a lighting device according to another embodiment of the invention, in which improved white light is produced by two separate layers, a first layer comprising phosphor particles and a second layer comprising a phosphor-SNP combination.
  • FIG. 5C shows schematically a lighting device according to another embodiment of the invention, in which improved white light is produced by a SNP/phosphor/host mixture deposited directly on the LED element.
  • FIG. 6A shows the optical spectrum provided by a layer prepared as described Example 1 when deposited on a 455 nm LED
  • FIG. 6B shows CIE 1931 diagrams showing the CIE coordinates of the spectrum shown in FIG. 6A .
  • FIG. 7 shows the spectrum of a blue LED with a material prepared as described in Example 2 deposited on a LED emitting surface
  • the material may be II-VI, III-V, IV-VI, or I-III-VI 2 semiconductors or combinations thereof.
  • the seed/core material may be selected from CdS, CdSe, CdTe, ZnS, ZnSe, ZnTe, ZnO, GaAs, GaP, GaAs, GaSb, HgS, HgSe, HgTe, InAs, InP, InSb, AlAs, AlP, AlSb, Cu 2 S, Cu 2 Se, CuInS 2 , CuInSe 2 , Cu 2 (ZnSn)S 4 , Cu 2 (InGa)S 4 , alloys thereof, and mixtures thereof.
  • shell material refers to the semiconductor material from which each of the non-spherical elongated shells is made.
  • the material may be a II-VI, III-V, IV-VI, or I-III-VI 2 semiconductor or combinations thereof.
  • the shell material may be selected from CdS, CdSe, CdTe, ZnS, ZnSe, ZnTe, ZnO, GaAs, GaP, GaAs, GaSb, GaN, HgS, HgSe, HgTe, InAs, InP, InSb, AlAs, AlP, AlSb, Cu 2 S, Cu 2 Se, CuInS 2 , CuInSe 2 , Cu 2 (ZnSn)S 4 , Cu 2 (InGa)S 4 , alloys thereof, and mixtures thereof.
  • the term “host material” refers to a matrix material which incorporates the SNPs or other suitable nanoparticles as well as the phosphor materials.
  • the matrix material may be a silicone, a polymer (formed from liquid or semisolid precursor material such as monomer), an epoxy, glass or a hybrid of silicone and epoxy.
  • polymers include fluorinated polymers, polymers of ployacrylamide, polymers of polyacrylic acids, polymers of polyacrylonitrile, polymers of polyaniline, polymers of polybenzophenon, polymers of poly(methyl mathacrylate), silicone polymers, aluminium polymers, polymers of polybisphenol, polymers of polybutadiene, polymers of polydimethylsiloxane, polymers of polyethylene, polymers of polyisobutylene, polymers of polymers of polypropylene, polymers of polystyrene and polyvinyl polymers, polyvinyl-butyral polymers or perfluorocyclobutyl polymers.
  • Silicones may include Gel, Elastomers and Resins such as Gel: Dow Corning® OE-6450, Elastomer Dow Corning® OE-6520, Dow Corning® OE-6550, Dow Corning® OE-6630, Resins: Dow Corning® OE-6635, Dow Corning® OE-6665, Nusil LS-6143 and other products from Nusil, Momentive RTV615, Momentive RTV656 and many other products from other vendors.
  • Gel Dow Corning® OE-6450, Elastomer Dow Corning® OE-6520, Dow Corning® OE-6550, Dow Corning® OE-6630, Resins: Dow Corning® OE-6635, Dow Corning® OE-6665, Nusil LS-6143 and other products from Nusil, Momentive RTV615, Momentive RTV656 and many other products from other vendors.
  • ligand refers to an outer surface coating of the nanoparticles.
  • the coating passivates the SNP to prevent agglomeration or aggregation.
  • Ligands in common use phosphines and phosphine oxides such as trioctylphosphine oxide (TOPO), trioctylphosphine (TOP), tributylphosphine (TBP), phosphonic acids such as dodecylphosphonic acid (DDPA), tridecylphosphonic acid (TDPA), octadecylphosphonic acid (ODPA) or hexylphosphonic acid (HPA), amines such as dodecyl amine (DDA), tetradecyl amine (TDA), hexadecyl amine (HDA) or octadecyl amine (ODA), thiols such as hexadecane thiol or hexane thiol, mercap
  • FIGS. 2A , B show a comparison between the absorption and emission of a known layer which includes CdSe/ZnS core/shell quantum dot nanoparticles and two types of layers according to embodiments of the invention: a green emitting RSNP layer ( FIG. 1A ) and an orange emitting RSNP layer ( FIG. 1B ).
  • the comparison is between the absorption and normalized emission of the QD layer vs. the RSNP layers having a matched absorption at the excitation wavelength of 450 nm.
  • the Green RSNP layer included CdSe/CdS core/shell RSNPs with dimensions 4 ⁇ 27 nm (diameter ⁇ length), emitting at a center wavelength (CWL) or peak wavelength of 540 nm with a full width half maximum (FWHM) of 29 nm.
  • the Orange RSNP layer included CdSe/CdS RSNPs with dimensions 5 ⁇ 40 nm, a CWL at 600 nm and FWHM of 28 nm. Both Orange and Green emitting layers were prepared in a similar way, and both were 190 ⁇ m-thick, with diameter of 42 mm.
  • the PL quantum yield (QY) of both QD and RSNP original nanoparticles was similar and on the order of 50%. This is a typical value. In other prepared samples, the QY ranged from 5-100%, more often between 20-90% and even more often between 50-80%.
  • the absorption is measured in relative optical density (OD) units, where the scale shown is normalized to the range [0 1] for convenience.
  • OD optical density
  • the OD of the QD layer in the emission wavelength range e.g. 520-550 nm
  • the OD difference for the orange emitting layers in FIG. 2B is even higher (0.575 vs.
  • the OD in the emission range of a QD layer was found to be 3-30 times higher than that of a SNP layer. Therefore, losses due to self-absorbance are significant for the QD layer case and negligible for the SNP layer case. This property is used in various SNP layers of the invention (whether densely-packed or not) to provide far superior products over existing layers based on quantum dots.
  • FIG. 3 shows normalized absorption curves of three types of RSNP layers prepared as described in Example 1 of co-filed PCT application No. ______ titled “Lighting devices with prescribed color emission”: RSNPs were synthesized following similar procedures to those described in L. Carbone et al.
  • the “absorption ratio” between absorption at 455 nm to that at the emission wavelengths is respectively 1:5, 1:12 and 1:23 for RSNP layers with RSNPs of lengths 16, 45 and 95 nm. This shows that the absorption ratio is “tunable” by varying the RSNP length, allowing to control and minimize the undesirable re-absorbtion effect. This tunability is very useful in RSNP layers since it allows the RSNP layers to act as the efficient spectral antenna to convert blue light to red light desired in a light source and application.
  • RSNP layer An additional parameter resulting from this special characteristic of RSNP layer is that it allows to efficiently balance the light between the different spectral regions of the visible spectrum (say green-yellow emitted by CE:YAG and the red emitted by RSNPs) to obtain light with required characteristic (such as CCT and CRI).
  • a combination of material in a layer disclosed herein can be realized using semiconducting nanocrystals, in particular particles from II-VI, III-V and I-III-VI 2 groups, more particularly II-VI RSNPs with a core diameter from 2 to 7 nm, a shell length from 8 to 500 nm long and a shell diameter from 5 to 20 nm, or II-VI or III-V or I-III-VI 2 core shell nanocrystals with a very thick shell that covers the core with a layer of more than 3 nm thickness, resulting in particles with diameter larger than 8 nm.
  • the RSNP material is combined with phosphor material from the list above with a mixture in weight percentage of 0.2-10% of SNP or RSNP. This mixture can be further inserted into a host material, typically silicone, with a 5-50% mix of conversion material to encapsulant by weight, according to the desired thickness of the layer and the desired optical characteristic of the emission spectrum.
  • a host matrix is prepared in non-solid form (e.g. as a gel).
  • SNP material is dissolved in organic solvents such as Toluene.
  • the weight of the SNP material divided by the phosphor powder weight is between 0.2% and 10%.
  • the SNP in organic solvent solution is first added to the host mixture while stirring.
  • the phosphor powder is added and the SNP/phosphor/host mixture is stirred to obtain a homogenous mixture.
  • the SNP/phosphor/host mixture in then vacuumed until no bubbles or organic solvent are left. The mixture is then ready for dispensing on a LED and for the following curing process.
  • One-part materials e.g. silicones, epoxies or polymers
  • hosts that are single part to mix the SNP and phosphor inside.
  • a particular embodiment is to embed the phosphor and SNP components in one-part hosts that are UV-curable.
  • ком ⁇ онент A e.g. silicones, epoxies
  • Part B the reactive part
  • SNP in Part A can be stored for long time and applied to create a mixture with the phosphor and Part B when needed.
  • the SNP can be added directly into the host during the mixing of the reactive part of the host with the non-reactive part.
  • the insertion procedure is divided into two steps.
  • the SNPs covered by ligands are inserted into a host A (e.g. a polymer, a silicone, a clay, silica, etc.) to provide a homogenous mixture with no clusters and bubbles and no “extra” chemical interaction between SNPs or ligands and the host.
  • Host A is then dried and hardened (e.g. via polymerization, heating, vacuum treatment, UV curing, etc.) with the NP encapsulated in it (see FIG. 4A ).
  • Host A with the SNP encapsulated in it are then mechanically ground into micron-scale and sub micron-scale beads.
  • the beads are mixed with compatible or non-compatible host B (e.g. a polymer, a silicone, a clay, silica, etc different then host A), as in FIG. 4B .
  • host B e.g. a polymer, a silicone, a clay, silica, etc different then host A
  • the final product includes beads of SNPs encapsulated by host A homogenously inserted into host B.
  • Tables 1 and 2 summarize various exemplary embodiments of phosphor+RSNP and phosphor+SNP combinations made according to the invention. In some embodiments, these combinations may be included in a host matrix such as silicone or polymer. In some embodiments, these combinations may be included in layers with a host matrix such as a silicone or a polymer. These combinations have advantageous physical parameters and optical performances for lighting and display applications.
  • the exemplary embodiments summarized in Tables 1 and 2 should not be considered as limiting the invention in any way.
  • AR red (Absorbance 455 nm /max(Absorbance 580-700 nm ); b AR green is the ratio between the absorbance at 455 nm to the maximal absorbance in a wavelength range between 520-580 nm, i.e.
  • AR green (Absorbance 455 nm /max(Absorbance 520-580 nm ); c LC/Host is the weight of the phosphor-SNP mixture divided by the weight of the host material in percentage; d PL Red shift is the difference in nanometers between the CWL measured in Toluene at low OD ( ⁇ 0.1) and the CWL measured for the phosphor-SNP mixture; e A silicone with suitable optical and mechanical properties can be selected from various commercial suppliers; f The polymer can be selected from list given in definitions.
  • AR red (Absorbance 455 nm /max(Absorbance 580-700 nm ); b AR green is the ratio between the absorbance at 455 nm to the maximal absorbance at wavelength range between 520-580 nm, i.e.
  • AR green (Absorbance 455 nm /max(Absorbance 520-580 nm ); c
  • the Host A can be selected from list given in definitions for polymer and in addition silica, epoxy or clay; d
  • the phosphor can be selected from list given in definitions; e LC/Host B is the weight of the phosphor-SNP mixture divided by the weight of the matrix host material in percentage; f
  • a host material with suitable optical and mechanical properties can be selected from various commercial suppliers;
  • g PL Red shift is the difference in nanometers between the CWL measured in Toluene at low OD ( ⁇ 0.1) and the CWL measured for the phosphor-SNP mixture h For low percentage of SNP in polymer, use high percentage of light converters to host and vice versa.
  • FIG. 5A shows schematically a lighting device according to an embodiment of the invention, in which improved white light is produced by a single layer comprising a phosphor-SNP combination.
  • FIG. 5B shows schematically a lighting device according to another embodiment of the invention, in which improved white light is produced by two separate layers, a first layer comprising phosphor particles and a second layer comprising a phosphor-SNP combination.
  • FIG. 5C shows schematically a lighting device 500 which includes a SNP and phosphor mixture in silicone conversion layer according to an embodiment of the invention.
  • Device 500 includes a blue or UV LED light source, an optional spacer layer (or air as spacer) 504 , a SNP and phosphor mixture in host conversion layer 506 , an optional encapsulation layer 508 , an optional transmissive optical element 510 for light extraction to desired directionality, an optional refractive element such as a lens 512 to collimate or focus the light, and an optional reflective element 514 placed behind and around the LED element to collect and direct emission from large angles to the correct output direction.
  • the high refractive index of a SNP layer with a high-loading ratio is preferred in order to increase the light extraction from the LED chip.
  • FIG. 6 shows the optical spectrum provided by the conversion material described above when deposited on a 455 nm LED.
  • FIG. 6B shows CIE 1931 diagrams showing the CIE coordinates of the spectrum shown in FIG. 6A .
  • the light has a CCT of 3080 K and a CRI of 86.
  • Other mixture ratios in combination with other LEDs can provide light sources with a variety of colors and in particular a variety of white light with different CCT values.
  • the types of phosphors, the types, sizes and shapes of the RSNPs, and the ratio between the phosphor species and the RSNP species can be tailored according to the desired needs. For example, adding more red emitting RSNPs would decrease the blue and therefore also the green-yellow of the phosphor, while strengthening the red.
  • a CCT ⁇ 5000 K with CRI>70, or even a CCT ⁇ 3500 with CRI>80 can be provided for other mixing ratios (not shown).
  • the RSNPs prepared as described in Example 1 were embedded in PVB with 3% loading ratio (weight) and were ground to fine powder. The final powder mean particle size was less than 15 ⁇ m.
  • 1.5 g of RTV615A (Momentive, 22 Corporate Woods Boulevard, Albany, N.Y. 12211 USA) was stirred with 0.15 g of RTV615B for 10 min 77 mg of the RSNP/PVB powder was added to the silicone mixture while stirring.
  • 345 mg of Yttrium Aluminum Garnet phosphor BYW01A, PhosphorTech, 351 Thornton Rd Ste. 130, Lithia Springs, Ga. 30122, USA
  • FIG. 7 shows the optical spectrum provided by the layer described above when deposited on a 455 nm LED.

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US20130026506A1 (en) 2013-01-31
CN102844403A (zh) 2012-12-26
EP2528990B1 (en) 2017-04-26
JP2013518166A (ja) 2013-05-20
KR101519509B1 (ko) 2015-05-12
WO2011092647A2 (en) 2011-08-04
EP2528989A2 (en) 2012-12-05
US10000699B2 (en) 2018-06-19
US9868901B2 (en) 2018-01-16
JP5828154B2 (ja) 2015-12-02
KR20180025982A (ko) 2018-03-09
CN103108940A (zh) 2013-05-15
JP5828155B2 (ja) 2015-12-02
JP2013518932A (ja) 2013-05-23
US20180155622A1 (en) 2018-06-07
KR20120139710A (ko) 2012-12-27
WO2011092647A3 (en) 2011-11-10
EP2528989B1 (en) 2015-03-04
US20130181234A2 (en) 2013-07-18
US9109163B2 (en) 2015-08-18
CN103108940B (zh) 2015-11-25
KR101833313B1 (ko) 2018-03-02
US20160013370A1 (en) 2016-01-14
WO2011092646A2 (en) 2011-08-04
CN102844403B (zh) 2015-12-02

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