US20080031037A1 - Semiconductor Memory Device - Google Patents

Semiconductor Memory Device Download PDF

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Publication number
US20080031037A1
US20080031037A1 US11/793,080 US79308005A US2008031037A1 US 20080031037 A1 US20080031037 A1 US 20080031037A1 US 79308005 A US79308005 A US 79308005A US 2008031037 A1 US2008031037 A1 US 2008031037A1
Authority
US
United States
Prior art keywords
storage node
write
data
read
bit line
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
US11/793,080
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English (en)
Inventor
Koichi Takeda
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp filed Critical NEC Corp
Assigned to NEC CORPORATION reassignment NEC CORPORATION ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). Assignors: TAKEDA, KOICHI
Publication of US20080031037A1 publication Critical patent/US20080031037A1/en
Abandoned legal-status Critical Current

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    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/41—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
    • G11C11/412—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger using field-effect transistors only
US11/793,080 2004-12-16 2005-12-16 Semiconductor Memory Device Abandoned US20080031037A1 (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2004363946 2004-12-16
JP2004-363946 2004-12-16
PCT/JP2005/023544 WO2006073060A1 (ja) 2004-12-16 2005-12-16 半導体記憶装置

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2005/023544 A-371-Of-International WO2006073060A1 (ja) 2004-12-16 2005-12-16 半導体記憶装置

Related Child Applications (1)

Application Number Title Priority Date Filing Date
US12/910,536 Division US8199594B2 (en) 2004-12-16 2010-10-22 Semiconductor memory device

Publications (1)

Publication Number Publication Date
US20080031037A1 true US20080031037A1 (en) 2008-02-07

Family

ID=36647543

Family Applications (3)

Application Number Title Priority Date Filing Date
US11/793,080 Abandoned US20080031037A1 (en) 2004-12-16 2005-12-16 Semiconductor Memory Device
US12/910,536 Expired - Fee Related US8199594B2 (en) 2004-12-16 2010-10-22 Semiconductor memory device
US13/463,355 Expired - Fee Related US8724396B2 (en) 2004-12-16 2012-05-03 Semiconductor memory device

Family Applications After (2)

Application Number Title Priority Date Filing Date
US12/910,536 Expired - Fee Related US8199594B2 (en) 2004-12-16 2010-10-22 Semiconductor memory device
US13/463,355 Expired - Fee Related US8724396B2 (en) 2004-12-16 2012-05-03 Semiconductor memory device

Country Status (3)

Country Link
US (3) US20080031037A1 (ja)
JP (3) JP4849249B2 (ja)
WO (1) WO2006073060A1 (ja)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20080238850A1 (en) * 2007-03-26 2008-10-02 Seiko Epson Corporation Liquid crystal device, pixel circuit, active matrix substrate, and electronic apparatus
US20150371705A1 (en) * 2013-01-30 2015-12-24 Commissariat a l'énergie atomique et aux énergies alternatives Method for programming a bipolar resistive switching memory device
US9472267B2 (en) * 2014-08-19 2016-10-18 Semiconductor Manufacturing International (Shanghai) Corporation Static random access memory
KR101919057B1 (ko) * 2010-10-25 2018-11-15 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 메모리 장치 및 그 구동 방법
CN110853685A (zh) * 2014-03-03 2020-02-28 瑞萨电子株式会社 半导体存储装置及其i/o电路
CN112837730A (zh) * 2019-11-25 2021-05-25 台湾积体电路制造股份有限公司 存储器单元、存储器阵列、sram器件及其方法

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8411075B2 (en) * 2008-09-08 2013-04-02 Palo Alto Research Center Incorporated Large area electronic sheet and pixel circuits with disordered semiconductors for sensor actuator interface
JP2013009285A (ja) 2010-08-26 2013-01-10 Semiconductor Energy Lab Co Ltd 信号処理回路及びその駆動方法
KR20160079051A (ko) * 2013-12-27 2016-07-05 인텔 코포레이션 이중 전압 비대칭 메모리 셀

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6188628B1 (en) * 1999-04-13 2001-02-13 Matsushita Electric Industrial Co., Ltd. Semiconductor storage device
US20020041531A1 (en) * 1997-06-16 2002-04-11 Hitoshi Tanaka Semiconductor integrated circuit device
US6373745B2 (en) * 2000-03-21 2002-04-16 Texas Instruments Incorporated Semiconductor memory cell and semiconductor memory device
US20030002328A1 (en) * 2001-06-28 2003-01-02 Matsushita Electric Industrial Co., Ltd. SRAM device
US20030035331A1 (en) * 2000-03-03 2003-02-20 Foss Richard C. High density memory cell
US20030185044A1 (en) * 2002-04-01 2003-10-02 Mitsubishi Denki Kabushiki Kaisha Semiconductor memory device
US20070201273A1 (en) * 2006-02-27 2007-08-30 International Business Machines Corporation Back-gate controlled asymmetrical memory cell and memory using the cell

Family Cites Families (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58211393A (ja) * 1982-06-02 1983-12-08 Mitsubishi Electric Corp 半導体メモリ装置
JPS6076085A (ja) * 1983-09-30 1985-04-30 Toshiba Corp 半導体記憶装置
JPH0221492A (ja) * 1988-07-08 1990-01-24 Nec Corp メモリ回路
JPH0729376A (ja) * 1993-07-14 1995-01-31 Ricoh Co Ltd 半導体メモリ装置及びデータ読み書き方法
JPH07230692A (ja) * 1994-02-17 1995-08-29 Fujitsu Ltd マルチポートメモリ
JPH10340584A (ja) * 1997-06-09 1998-12-22 Nec Corp 半導体記憶装置
JP3478953B2 (ja) * 1997-09-03 2003-12-15 Ｎｅｃエレクトロニクス株式会社 半導体記憶装置
JPH11110969A (ja) * 1997-10-06 1999-04-23 Mitsubishi Electric Corp スタティック型半導体記憶装置
KR100275106B1 (ko) * 1997-12-30 2000-12-15 김영환 하나의비트라인으로이루어진에스램셀
JP2000322900A (ja) * 1999-05-12 2000-11-24 Mitsubishi Electric Corp 半導体記録装置
JP2001312888A (ja) * 2000-04-28 2001-11-09 Texas Instr Japan Ltd 半導体記憶装置
JP2003196985A (ja) * 2001-12-25 2003-07-11 Nec Electronics Corp 半導体メモリ及び半導体メモリのビットライト又はバイトライト方法
JP2004063605A (ja) * 2002-07-26 2004-02-26 Renesas Technology Corp 半導体装置
JP4134637B2 (ja) * 2002-08-27 2008-08-20 株式会社日立製作所 半導体装置
JP4052192B2 (ja) * 2003-03-14 2008-02-27 セイコーエプソン株式会社 半導体集積回路
JP4005535B2 (ja) 2003-07-02 2007-11-07 松下電器産業株式会社 半導体記憶装置
CN100524517C (zh) * 2003-10-27 2009-08-05 日本电气株式会社 半导体存储装置
US7161862B1 (en) * 2004-11-22 2007-01-09 Lattice Semiconductor Corporation Low power asynchronous sense amp

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20020041531A1 (en) * 1997-06-16 2002-04-11 Hitoshi Tanaka Semiconductor integrated circuit device
US6188628B1 (en) * 1999-04-13 2001-02-13 Matsushita Electric Industrial Co., Ltd. Semiconductor storage device
US20030035331A1 (en) * 2000-03-03 2003-02-20 Foss Richard C. High density memory cell
US6373745B2 (en) * 2000-03-21 2002-04-16 Texas Instruments Incorporated Semiconductor memory cell and semiconductor memory device
US20030002328A1 (en) * 2001-06-28 2003-01-02 Matsushita Electric Industrial Co., Ltd. SRAM device
US20030185044A1 (en) * 2002-04-01 2003-10-02 Mitsubishi Denki Kabushiki Kaisha Semiconductor memory device
US20070201273A1 (en) * 2006-02-27 2007-08-30 International Business Machines Corporation Back-gate controlled asymmetrical memory cell and memory using the cell

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20080238850A1 (en) * 2007-03-26 2008-10-02 Seiko Epson Corporation Liquid crystal device, pixel circuit, active matrix substrate, and electronic apparatus
US8159484B2 (en) * 2007-03-26 2012-04-17 Seiko Epson Corporation Liquid crystal device, pixel circuit, active matrix substrate, and electronic apparatus
KR101919057B1 (ko) * 2010-10-25 2018-11-15 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 메모리 장치 및 그 구동 방법
KR20180123647A (ko) * 2010-10-25 2018-11-19 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 메모리 장치 및 그 구동 방법
KR102016453B1 (ko) * 2010-10-25 2019-08-30 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 메모리 장치 및 그 구동 방법
US20150371705A1 (en) * 2013-01-30 2015-12-24 Commissariat a l'énergie atomique et aux énergies alternatives Method for programming a bipolar resistive switching memory device
US10566055B2 (en) * 2013-01-30 2020-02-18 Commissariat A L'energie Atomique Et Aux Energies Alternatives Method for programming a bipolar resistive switching memory device
CN110853685A (zh) * 2014-03-03 2020-02-28 瑞萨电子株式会社 半导体存储装置及其i/o电路
US9472267B2 (en) * 2014-08-19 2016-10-18 Semiconductor Manufacturing International (Shanghai) Corporation Static random access memory
CN112837730A (zh) * 2019-11-25 2021-05-25 台湾积体电路制造股份有限公司 存储器单元、存储器阵列、sram器件及其方法

Also Published As

Publication number Publication date
JP2011181183A (ja) 2011-09-15
JP2011181182A (ja) 2011-09-15
US20110032741A1 (en) 2011-02-10
US8199594B2 (en) 2012-06-12
JP4849249B2 (ja) 2012-01-11
WO2006073060A1 (ja) 2006-07-13
US8724396B2 (en) 2014-05-13
JP5229515B2 (ja) 2013-07-03
JP5321855B2 (ja) 2013-10-23
JPWO2006073060A1 (ja) 2008-06-12
US20120257442A1 (en) 2012-10-11

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Legal Events

Date Code Title Description
AS Assignment

Owner name: NEC CORPORATION, JAPAN

Free format text: ASSIGNMENT OF ASSIGNORS INTEREST;ASSIGNOR:TAKEDA, KOICHI;REEL/FRAME:019482/0066

Effective date: 20070606

STCB Information on status: application discontinuation

Free format text: ABANDONED -- FAILURE TO RESPOND TO AN OFFICE ACTION