US20070075629A1 - Nitride and oxy-nitride cerium based phosphor materials for solid-state lighting applications - Google Patents

Nitride and oxy-nitride cerium based phosphor materials for solid-state lighting applications Download PDF

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US20070075629A1
US20070075629A1 US11/541,755 US54175506A US2007075629A1 US 20070075629 A1 US20070075629 A1 US 20070075629A1 US 54175506 A US54175506 A US 54175506A US 2007075629 A1 US2007075629 A1 US 2007075629A1
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luminescent
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Ronan Le Toquin
Anthony Cheetham
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University of California
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    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K11/00—Luminescent, e.g. electroluminescent, chemiluminescent materials
    • C09K11/08—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials
    • C09K11/0883—Arsenides; Nitrides; Phosphides
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K11/00—Luminescent, e.g. electroluminescent, chemiluminescent materials
    • C09K11/08—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials
    • C09K11/77—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing rare earth metals
    • C09K11/7715—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing rare earth metals containing cerium
    • C09K11/77217—Silicon Nitrides or Silicon Oxynitrides
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K11/00—Luminescent, e.g. electroluminescent, chemiluminescent materials
    • C09K11/08—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials
    • C09K11/77—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing rare earth metals
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K11/00—Luminescent, e.g. electroluminescent, chemiluminescent materials
    • C09K11/08—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials
    • C09K11/77—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing rare earth metals
    • C09K11/7715—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing rare earth metals containing cerium
    • C09K11/77218—Silicon Aluminium Nitrides or Silicon Aluminium Oxynitrides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/50—Wavelength conversion elements
    • H01L33/501—Wavelength conversion elements characterised by the materials, e.g. binder
    • H01L33/502—Wavelength conversion materials
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B33/00—Electroluminescent light sources
    • H05B33/12—Light sources with substantially two-dimensional radiating surfaces
    • H05B33/14—Light sources with substantially two-dimensional radiating surfaces characterised by the chemical or physical composition or the arrangement of the electroluminescent material, or by the simultaneous addition of the electroluminescent material in or onto the light source
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02B—CLIMATE CHANGE MITIGATION TECHNOLOGIES RELATED TO BUILDINGS, e.g. HOUSING, HOUSE APPLIANCES OR RELATED END-USER APPLICATIONS
    • Y02B20/00—Energy efficient lighting technologies, e.g. halogen lamps or gas discharge lamps

Definitions

  • the present invention relates to cerium (Ce) based phosphor materials for solid-state lighting applications.
  • LED Light emitting diodes
  • wide band gap semiconductor materials such as GaN/InGaN produce ultraviolet (UV) and/or blue light (300 nm-460 nm) with high efficiency and long lifetimes [1,14].
  • UV ultraviolet
  • blue light 300 nm-460 nm
  • the emission from such LEDs can be converted into lower energy radiation using the luminescence properties of phosphor materials. Therefore, high intensity blue light ( 10 ) can be used to make white LED devices by combining either a blue LED ( 11 ) and a yellow phosphor ( 12 ), as shown in FIG. 1 ( a ), so that blue and yellow light ( 13 ) is emitted which appears as white light ( 14 ).
  • a high intensity UV light ( 20 ) can be used to make white LED devices by combining a UV LED ( 21 ) with three phosphors, i.e., red, green and blue (RGB) phosphors ( 22 ), as shown in FIG. 2 . The combination will emit red, green and blue light ( 23 ) which appears as white light ( 24 ).
  • the LEDs ( 11 ),( 21 ) may be formed on substrates ( 17 ), ( 25 ) respectively.
  • the first commercially available white LED was based on an InGaN chip emitting blue photons at around 460 nm combined with a Y 3 Al 5 O 12 :Ce 3+ (YAG) phosphor layer that converts blue into yellow photons [2,3].
  • YAG Y 3 Al 5 O 12 :Ce 3+
  • new phosphors are necessary in order to improve efficiency as well as color rendering.
  • the yellow phosphor should have a strong blue excitation band around 460 nm and emit yellow light around 560 nm.
  • the second option to obtain white light requires very efficient blue, green and red phosphors that can be excited around 380 nm.
  • the development of white solid state lighting based on UV LED requires so far new very efficient phosphor materials.
  • Ce doped materials are characterized by UV emission [5].
  • high crystal field symmetries (Ce—YAG [2]) or a strongly covalent Ce environment (sulfides or oxy-nitrides [6]) can decrease the energy of the emission wavelength.
  • Yttrium aluminium garnet (YAG) doped with Ce 3 + is the most important example, exhibiting a strong yellow emission (540 nm) upon blue excitation (460 nm).
  • the cubic crystal field at the Ce site associated with a small tetragonal distortion is responsible for this unusual yellow emission [2].
  • the present invention discloses three new Ce based phosphor materials based on nitride and oxy-nitride compounds have been found that emit, respectively, yellow and blue-green photons upon UV/blue excitation.
  • the yellow emitting compounds belong to the Ca—Al—Si—N system with distinct structures.
  • These bright yellow phosphors can be used for white light applications by combining either a blue LED and a yellow phosphor, a blue LED and green-orange phosphors, or an UV LED with three RGB phosphors.
  • the present invention encompasses a number of different embodiments, which are set forth below.
  • the present invention is an apparatus for solid state lighting applications, comprising an LED and a luminescent Ce compound comprising a Ce 3+ doped compound from the quartenary Ca—Al—Si—N system, wherein the luminescent Ce compound emits yellow light when excited by radiation from the LED.
  • the luminescent Ce compound may have an excitation spectrum comprising wavelengths smaller than 430 nm.
  • the radiation may be UV or blue light radiation, e.g., the LED may be a blue LED and the luminescent Ce compound may emit the yellow light for use in white light applications with the blue LED.
  • the present invention is a composition of matter, comprising a luminescent Ce compound that emits yellow light when excited by radiation, wherein the luminescent Ce compound is a Ce 3+ doped compound from the quartenary Ca—Al—Si—N system.
  • the radiation may be UV or blue light radiation, e.g., the luminescent Ce compound may emit the yellow light for use in white light applications with a blue light emitting diode.
  • Yttrium (Y) or lanthanide (Ln) elements may be substituted for M with simultaneous replacement of silicon (Si) by aluminium (Al) or gallium (Ga) for charge compensation. Silicon (Si) may be partially substituted by germanium (Ge).
  • the luminescent Ce compound may have a broad excitation band from 375 to 475 nm with a maximum at around 420 nm, and upon excitation at 420 nm, have an emission band centered at around 540 nm with a full width at half maximum of about 100 nm from 500 to 600 nm.
  • the composition of matter of claim 5 wherein the luminescent Ce compound has an emission maximum in the range 520-620 nm.
  • the luminescent Ce compound may have an excitation maximum in the range 420-500 nm.
  • the present invention is a method for creating a luminescent Ce compound, comprising the steps of (a) mixing stoichiometric amounts of (1) Ca 3 N 2 or Ca metal, (2) AlN, (3) Si 3 N 4 or Si 2 N 2 NH, or Si(NH) 2 , and (4) Ce to create a mixture, wherein the Ce is in the form of a metal, nitride, or oxide, (b) weighing and grinding the mixture in conditions of [O 2 ] ⁇ 1 parts per million (ppm) and [H 2 O ] ⁇ 1 ppm in order to prevent oxidation or hydrolysis, and (c) heating the mixture to a temperature between 1450° C. and 1600° C.
  • the method may further comprise mixing the stoichiometric amounts of (1) Ca 3 N 2 or Ca metal, (2) AlN, (3) Si 3 N 4 , Si 2 N 2 NH or Si(NH) 2 , with a Ca:Al: Si ratio of 1:1:1, and adding less than 2% strontium.
  • the present invention is an apparatus for solid state lighting applications, comprising an LED and a luminescent Ce compound that emits blue-green light when excited by radiation from the LED.
  • the radiation may be UV or blue light radiation, e.g., the LED may be a UV LED and the luminescent Ce compound may emit the blue-green light for use in white light applications with the UV LED in combination with RGB phosphors.
  • the present invention is a composition of matter, comprising a luminescent Ce compound that emits blue-green light when excited by radiation.
  • the radiation may be UV or blue light radiation, e.g., the luminescent Ce compound may be used for white light applications in combination with one or more UV LEDs with RGB phosphors.
  • the luminescent Ce compound may be based on nitride or oxy-nitride compounds and be described by the formula M 2 SiO 4- ⁇ N ⁇ wherein M is strontium (Sr) and 0 ⁇ 4. Alkaline earths may be substituted for M and Si may be partially substituted by Ge.
  • the blue to green luminescent Ce compound may have an excitation peak with a width of about 80 nm, which leads to efficient excitation from 330 up to 400 nm, and may have an emission peak with a width of about 80 nm.
  • the luminescent Ce compound may have an emission peak that is varied from 450 to 500 nm depending on synthesis conditions, a percentage of cerium or substitution of Sr by larger cations such as Ba.
  • the blue to green luminescent Ce compound may be prepared by (a) preparing a reactive mix of cerium doped SrO and SiO 2 nanopowders by dissolution of stoichiometric amounts of Sr(NO 3 ) 2 and Ce(NO 3 ) 3 in water with Si(OC 2 H 5 ) 4 , wherein a coprecipitation of Sr and Ce oxalate at 60° C. is performed in a slightly basic environment in order to gel Si(OC 2 H 5 ) 4 and a resulting dried powder is calcined at 750° C. for 2 hours, and (b) mixing the SrO thoroughly with Si 3 N 4 to create a powder mixture and firing the powder mixture twice in a tube furnace at a temperature of 1350° C. under flowing N 2 at 1 to 4 liters per minute.
  • FIGS. 1 ( a ) and 1 ( b ) are schematic representations of a white LED setup based on a blue LED ( ⁇ 460 nm) with a yellow phosphor, as shown in FIG.( a ), or with a mix of green and orange phosphors, as shown in FIG.( b ).
  • FIG. 2 is a schematic representation of the white LED setup based on a UV LED ( ⁇ 380 nm) with red, green and blue (RGB) phosphor materials.
  • FIG. 3 is a flowchart illustrating the preparation of a yellow phosphor comprising a luminescent Ce compound based on nitride compounds.
  • FIG. 4 is a graph of the emission/excitation spectra of the compound CaAlSiN 3 doped with Ce 3+ , wherein the emission wavelength maximum is 540 nm and the excitation wavelength has been fixed at ⁇ 420 nm.
  • FIG. 5 is a flowchart illustrating the preparation of a second phase of a yellow phosphor comprising a luminescent compound.
  • FIG. 6 is a graph of an X-ray diffraction pattern of the Ce 3+ doped Ca x Si y Al z N 3- ⁇ O ⁇ yellow phosphor.
  • FIG. 7 is a graph of the emission/excitation spectra of the new Ce 3+ doped Ca x Si y Al z N 3- ⁇ O ⁇ yellow phosphor, wherein the excitation wavelength is ⁇ 460 nm and the emission wavelength has been fixed at ⁇ 565 nm.
  • FIG. 8 shows how the composition of matter comprising the blue-green phosphor has been synthesized via a two step method.
  • FIG. 9 is a graph of an X-ray diffraction pattern of the Ce 3+ doped Sr 2 SiO 4- ⁇ N ⁇ blue-green phosphor.
  • FIG. 10 is a graph of the emission spectrum of the compound Sr 2 SiO 4 doped with Ce 3+ , wherein the excitation wavelength is 380 nm and the emission wavelength has been fixed at 460 nm.
  • FIG. 11 is a schematic representation of an apparatus for solid state lighting applications, comprising an LED and a composition of matter comprising a luminescent Ce compound.
  • the subject of the present invention is the discovery of three new phosphor materials for application in white solid-state lighting based upon blue (InGaN) or UV (GaN, ZnO) LEDs.
  • the invention covers the synthesis of yellow and blue to green emitting materials and their application as a phosphor alone or in combination with other phosphors for white LED realization.
  • Two compositions of matter comprising Ce 3+ doped compounds from the quaternary Ca—Al—Si—N system are reported to emit yellow photons under UV or blue excitation, and cerium doped Sr 2 SiO 4- ⁇ N ⁇ is reported to emit blue to green light.
  • Yttrium (Y) or lanthanide (Ln) elements may also be substituted on the M site with simultaneous replacement of silicon (Si) by aluminium (Al) or gallium (Ga) atoms for charge compensation. Silicon (Si) atoms may also be partially substituted using germanium (Ge).
  • FIG. 3 shows how the composition of matter comprising the first yellow phosphor (nitride based CaAlSiN 3 :Ce 3+ phase) may be prepared.
  • Block 30 represents the step of mixing stoichiometric amounts of (1) Ca 3 N 2 or Ca metal, (2) AlN, (3) Si 3 N 4 , Si 2 N 2 NH or Si(NH) 2 , with (4) the Ce source in the form of either a metal, nitride (if available), or oxide, to create a mixture.
  • Block 31 represents the step of weighing and grinding of the mixture, carried out in a glove box in conditions of [O 2 ] ⁇ 1 ppm and [H 2 O] ⁇ 1 ppm in order to prevent degradation such as oxidation or hydrolysis.
  • Block 32 represents the step of loading the mixture into, for example, a boron nitride (BN) crucible, for heating in a tube furnace temperature between 1450 ° C. and 1600° C. under flowing hydrogen (H 2 ) and nitrogen (N 2 ) with a ratio of 5:95 (0.2 to 0.5 liters per minute).
  • the body color of this material is bright yellow.
  • FIG. 4 shows an example of how a composition of matter comprising a luminescent Ce doped compound from the Ca—Al—Si—N system emits yellow light when excited by radiation, for example UV or blue radiation.
  • the Ce doped CaAlSiN 3 has a broad excitation band from 375 nm to 475 nm with a maximum at around 420 nm.
  • the emission band is centered at around 540 nm with a full width at half maximum of about 100 nm from 500 nm to 600 nm.
  • FIG. 4 shows how the luminescent Ce compound can be a promising alternative to YAG:Ce 3+ for the application as the yellow phosphor.
  • the broad excitation band can be efficiently excited with a blue InGaN LED around 460 nm.
  • the Ce compound can be excited as well by a near UV GaN, ZnO LED for a three phosphor RGB setup.
  • this material shows a broader excitation band of about 100 nm whereas cerium YAG shows only a 60 nm wide band ranging from 430 nm to 490 nm.
  • FIG. 5 shows how the second yellow phosphor comprising a second phase of the Ca—Al—Si—N system (Ca x Si y Al z N 3- ⁇ O ⁇ :Ce 3+ ) can be prepared.
  • Block 50 represents the step of mixing stoichiometric amounts of (1) Ca 3 N 2 or Ca metal, (2) AlN, and (3) Si 3 N 4 , Si 2 N 2 NH or Si(NH) 2 , with a Ca:Al:Si ratio of 1:1:1, together with (4) a Ce source in the form of either a metal, nitride (if available) or oxide, to create a mixture. A small amount of Sr (less than 2%) is added.
  • Block 51 represents the step of weighing and grinding of the mixture, carried out in a glove box in conditions of [O 2 ] ⁇ 1 ppm and [H 2 O] ⁇ 1 ppm in order to prevent degradation such as oxidation or hydrolysis.
  • Block 52 represents the step of loading the mixture into, for example, a BN crucible for heating in a tube furnace temperature between 1450° C. and 1600° C. under flowing H 2 /N 2 with a ratio of 5:95 at 0.2 to 0.5 liters per minute.
  • the body color of this material is bright yellow.
  • FIG. 6 and Table 2 show this newly discovered Ca x Si y Al z N 3- ⁇ O ⁇ :Ce 3+ phase, created using the method of FIG. 5 , has a different X-ray powder pattern.
  • FIG. 7 illustrates a further example of how a luminescent Ce doped compound from the Ca—Al—Si—N system, the new Ca x Si y Al z N 3- ⁇ O ⁇ :Ce 3+ phase, emits yellow light when excited by radiation such as blue or UV light.
  • FIGS. 4 and 7 show how the structural changes between CaAlSiN 3 :Ce 3+ and the Ca x Si y Al z N 3- ⁇ O ⁇ :Ce 3+ phase translate into a red shift of both emission and excitation bands.
  • the emission maximum is around 565 nm for the Ca x Si y Al z N 3- ⁇ O ⁇ :Ce 3+ phase, as illustrated in FIG. 7 .
  • Both compounds (CaAlSiN 3 :Ce 3+ and the new Ca x Si y Al z N 3- ⁇ O ⁇ :Ce 3+ phase) phase) present a comparable emission peak shape and full width at half maximum, as illustrated in FIGS. 4 and 7 .
  • the excitation maximum is at around 460 nm, but the excitation band covers the range 350 nm to 500nm, as illustrated in FIG. 7 .
  • the Ca x Si y Al z N 3- ⁇ O ⁇ :Ce 3+ phase is thus very suitable for the yellow phosphor and blue LED setup.
  • FIG. 7 also shows the Ce doped compound can also been used with a UV excitation source such as GaN or ZnO LED.
  • the tail of the emission peak, shown in FIG. 7 , that extends well over 630 nm can also be very advantageous for color rendering purposes.
  • the composition of the blue-green light emitting phosphor may be M 2 SiO 4- ⁇ N ⁇ , where M is mainly strontium (Sr), but chemical substitution on the M site is possible with different alkaline earths, magnesium (Mg), Ca, barium (Ba) or even zinc (Zn), and with 0 ⁇ 4. Silicon atoms may also be partially substituted using Ge. If ⁇ is 0, the compound is an example of a nitride compound; if 6 is non zero, the compound is an example of an oxy-nitride.
  • FIG. 8 shows how the composition of matter comprising the blue and green phosphor has been synthesized via a two step method.
  • Block 80 represents the step of preparing a reactive mix of cerium doped SrO and SiO 2 nanopowders by dissolution of stoichiometric amounts of Sr(NO 3 ) 2 and Ce(NO 3 ) 3 in water with Si(OC 2 H 5 ) 4 , wherein a co-precipitation of Sr and Ce oxalate at 60° C. is performed in a slightly basic environment in order to gel Si(OC 2 H 5 ) 4 , and a resulting dried powder is calcined at 750° C. for 2 hours.
  • Block 81 represents the step of mixing the (Sr,Ce)—Si—O thoroughly with Si 3 N 4 to create a mixture, and placing the mixture into, for example, an Al 2 O 3 boat, wherein a resulting powder is fired twice in a tube furnace at 1350° C. under flowing nitrogen (N 2 ) at 1 to 4 liters per minute.
  • the body color of this material is light green.
  • FIG. 10 shows an example of how a composition of matter comprising a luminescent Ce doped compound emits blue to green light when excited by radiation (such as blue or UV) from the LED.
  • the Sr 2 SiO 4 :Ce 3+ phosphor may be used as a blue to green phosphor for solid-state lighting based upon RGB and UV LEDs.
  • the very bright Sr 2 SiO 4 :Ce 3+ compound can be excited in the UV ( ⁇ 380 nm) using GaN or ZnO based LEDs, as illustrated in FIG. 10 .
  • FIG. 10 also shows the excitation peak has a width of about 80 nm which leads to efficient excitation in an excitation spectrum covering 330 nm up to 400 nm.
  • the emission peak may be varied from 450 nm to 500 nm depending on the synthesis conditions, the percentage of cerium or the substitution of Sr by larger cations such as Ba.
  • the emission peak at ⁇ 460 nm has a width of about 80 nm, as shown in FIG. 10 .
  • FIG. 11 is a schematic representation, analogous to FIGS. 1 and 2 , of an apparatus for solid state lighting applications (for example a white light application), comprising at least one LED ( 1100 ) and a composition of matter comprising a luminescent Ce doped compound ( 1101 ) typically positioned adjacent the LED, that emits yellow or blue to green light ( 1103 ) when excited by radiation ( 1104 ) from the LED.
  • Other colored light ( 1105 ) may be present if one or more other phosphors ( 1106 ) are incorporated, such as the phosphors of FIGS. 1 and 2 .
  • the other phosphors ( 1106 ) may comprise green and orange phosphors, or red, green and blue phosphors.
  • the radiation ( 1104 ) may comprise blue light or UV light.
  • the luminescent Ce compound When the LED ( 1100 ) is a blue LED, the luminescent Ce compound emits the yellow light ( 1103 ) for use in white light applications with the blue LED (and optionally other phosphors ( 1106 )), because the blue light ( 1104 ) in combination with the yellow light ( 1103 ) and light ( 1105 ) from other phosphors ( 1106 ) if present, appears as white light ( 1107 ).
  • the luminescent Ce compound When the LED ( 1100 ) is a blue LED, the luminescent Ce compound emits yellow light ( 1103 ) for use in white light applications with the blue LED and other phosphors ( 1106 ), because the blue light ( 1104 ) in combination with the green/orange light ( 1105 ) from other phosphors ( 1106 ) appears as white light ( 1107 ).
  • the luminescent Ce compound ( 1101 ) emits the yellow light ( 1103 ) for use in white light applications with the UV LED and RGB phosphors ( 1106 ), because the red, green and blue light ( 1103 ) from the RGB ( 1106 ) and the yellow light from the Ce compound appears as white light ( 1107 ).
  • the luminescent Ce compound ( 1101 ) emits the blue to green light ( 1103 ) for use in white light applications with the UV LED and RGB phosphors ( 1106 ), because the red, green and blue light ( 1105 ) from the RGB ( 1106 ) and the blue-green light ( 1103 ) from the luminescent Ce compound appears as white light ( 1107 ).
  • the luminescent Ce compound ( 1101 ) may be based on nitride or oxy-nitride compounds.
  • the LED may be formed on a substrate ( 1108 ).
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Cited By (27)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20070159066A1 (en) * 2005-09-30 2007-07-12 The Regents Of The University Of California Cerium based phosphor materials for solid-state lighting applications
US20070262339A1 (en) * 2006-04-24 2007-11-15 Cree, Inc. Side-View Surface Mount White LED
US20080283864A1 (en) * 2007-05-16 2008-11-20 Letoquin Ronan P Single Crystal Phosphor Light Conversion Structures for Light Emitting Devices
US20090121615A1 (en) * 2007-11-14 2009-05-14 Cree, Inc. Cerium and Europium Doped Phosphor Compositions and Light Emitting Devices Including the Same
EP2117055A2 (en) 2008-05-05 2009-11-11 Cree, Inc. Method of Fabricating Light Emitting Devices
US20110096560A1 (en) * 2009-10-23 2011-04-28 Samsung Led Co., Ltd. Phosphor, method for preparing and using the same, light emitting device package, surface light source apparatus and lighting apparatus using red phosphor
US20110215355A1 (en) * 2010-03-08 2011-09-08 Van De Ven Antony P Photonic crystal phosphor light conversion structures for light emitting devices
US20110234118A1 (en) * 2010-03-26 2011-09-29 Samsung Led Co., Ltd. Complex Crystal Phosphor, Light Emitting Device, Surface Light Source Apparatus, Display Apparatus, and Lighting Device
WO2011142770A1 (en) * 2010-05-14 2011-11-17 Lightscape Materials, Inc. Carbonitride based phosphors and light emitting devices using the same
GB2482312A (en) * 2010-07-28 2012-02-01 Sharp Kk II-III-V semiconductor material, comprising the Group II elements Zn or Mg, Group III elements In or Ga or Al and Group V elements N or P
US20120140438A1 (en) * 2009-07-11 2012-06-07 Merck Patent Gesellschaft Mit Beschrankter Haftung Co-doped silicooxynitrides
CN102597602A (zh) * 2009-09-18 2012-07-18 瓦洛亚公司 园艺led照明器材
EP2489717A1 (en) * 2011-01-24 2012-08-22 Panasonic Electric Works Co., Ltd Illumination device
US20120286647A1 (en) * 2010-02-03 2012-11-15 Koninklijke Philips Electronics N.V. Phosphor converted LED
EP2597129A1 (en) * 2011-11-16 2013-05-29 Kabushiki Kaisha Toshiba Luminescent materials on the basis of cerium doped SrSiAlON derivates
CN103314074A (zh) * 2010-09-20 2013-09-18 三星电子株式会社 赛伦磷光体、其制造方法和具有其的发光装置封装件
US8900489B2 (en) 2010-07-28 2014-12-02 Sharp Kabushiki Kaisha II-III-N semiconductor nanoparticles and method of making same
US9030103B2 (en) 2013-02-08 2015-05-12 Cree, Inc. Solid state light emitting devices including adjustable scotopic / photopic ratio
US9039746B2 (en) * 2013-02-08 2015-05-26 Cree, Inc. Solid state light emitting devices including adjustable melatonin suppression effects
US20150205189A1 (en) * 2014-01-23 2015-07-23 Seiko Epson Corporation Fluorescent light emitting element and projector
EP2837669A4 (en) * 2012-03-16 2015-08-12 Toshiba Kk PHOSPHORE, METHOD FOR THE PRODUCTION OF PHOSPHORUS AND LIGHT-EMITTING DEVICE
EP2910621A1 (en) * 2014-02-25 2015-08-26 Kabushiki Kaisha Toshiba Phosphor, light-emitting device and method for producing phosphor
CN104893719A (zh) * 2014-03-03 2015-09-09 株式会社东芝 磷光体和磷光体的制备方法以及使用所述磷光体的发光装置
CN105023995A (zh) * 2014-04-30 2015-11-04 株式会社东芝 发光装置
CN105038772A (zh) * 2015-07-10 2015-11-11 烟台同立高科新材料股份有限公司 一种硅基氮氧化物led荧光粉及其制备方法
DE102015110258A1 (de) * 2015-06-25 2016-12-29 Osram Gmbh Leuchtstoff, Verfahren zum Herstellen eines Leuchtstoffs und Verwendung eines Leuchtstoffs
CN108893107A (zh) * 2018-06-21 2018-11-27 东台市天源光电科技有限公司 一种氮化物红色荧光粉及其制备方法

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4899431B2 (ja) * 2005-11-12 2012-03-21 日亜化学工業株式会社 窒化物系蛍光体及びそれを用いた発光装置
US8465166B2 (en) 2007-04-20 2013-06-18 Konklijke Philips Electronics N.V. White emitting light source and luminescent material with improved colour stability
KR101352921B1 (ko) * 2007-05-25 2014-01-24 삼성디스플레이 주식회사 광원모듈, 이를 갖는 백라이트 어셈블리 및 이를 갖는표시장치
KR101067362B1 (ko) * 2008-12-24 2011-09-23 알티반도체 주식회사 질화물계 적색 형광물질
WO2010148109A1 (en) * 2009-06-16 2010-12-23 The Regents Of The University Of California Oxyfluoride phosphors and white light emitting diodes including the oxyfluoride phosphor for solid-state lighting applications
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EP2532224A1 (en) * 2011-06-10 2012-12-12 Valoya Oy Method and means for improving plant productivity through enhancing insect pollination success in plant cultivation
KR101856534B1 (ko) 2011-12-07 2018-05-14 삼성전자주식회사 산질화물계 형광체 및 이를 포함하는 발광장치
WO2018008284A1 (ja) 2016-07-04 2018-01-11 パナソニックＩｐマネジメント株式会社 プロジェクター装置
WO2018008283A1 (ja) 2016-07-04 2018-01-11 パナソニックＩｐマネジメント株式会社 ファイバー光源、内視鏡および内視鏡システム
JP6206696B1 (ja) 2016-07-04 2017-10-04 パナソニックＩｐマネジメント株式会社 蛍光体および発光装置
JP6281801B1 (ja) 2016-07-04 2018-02-21 パナソニックＩｐマネジメント株式会社 蛍光体および発光装置
JP6340749B2 (ja) * 2016-07-04 2018-06-13 パナソニックＩｐマネジメント株式会社 蛍光体を用いた発光装置
WO2023113970A1 (en) * 2021-12-14 2023-06-22 Lumileds Llc Color tunable pcleds based on temporal saturation of phosphors

Citations (45)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2308736A (en) * 1940-08-07 1943-01-19 Gen Electric Luminescent material
US2542349A (en) * 1948-08-05 1951-02-20 Gen Electric Calcium silicate phosphor
US2835636A (en) * 1954-01-07 1958-05-20 Westinghouse Electric Corp Cerium-activated magnesium metaphosphate phosphor, with and without manganese
US3014877A (en) * 1959-06-17 1961-12-26 Thorn Electrical Ind Ltd Luminescent materials
US3360674A (en) * 1964-11-23 1967-12-26 Sylvania Electric Prod Europium and bismuth activated yttrium vanadate phosphor
US5063183A (en) * 1985-08-13 1991-11-05 Tokuyama Soda Kabushiki Kaisha Sinterable aluminum nitride composition, sintered body from this composition and process for producing the sintered body
US5998925A (en) * 1996-07-29 1999-12-07 Nichia Kagaku Kogyo Kabushiki Kaisha Light emitting device having a nitride compound semiconductor and a phosphor containing a garnet fluorescent material
US6084250A (en) * 1997-03-03 2000-07-04 U.S. Philips Corporation White light emitting diode
US6155699A (en) * 1999-03-15 2000-12-05 Agilent Technologies, Inc. Efficient phosphor-conversion led structure
US20010001207A1 (en) * 1996-07-29 2001-05-17 Nichia Kagaku Kogyo Kabushiki Kaisha Light emitting device and display
US6252254B1 (en) * 1998-02-06 2001-06-26 General Electric Company Light emitting device with phosphor composition
US6278135B1 (en) * 1998-02-06 2001-08-21 General Electric Company Green-light emitting phosphors and light sources using the same
US6357889B1 (en) * 1999-12-01 2002-03-19 General Electric Company Color tunable light source
US20030006702A1 (en) * 1999-02-18 2003-01-09 Lumileds Lighting, U.S., Llc Red-deficiency compensating phosphor light emitting device
US6521915B2 (en) * 2000-03-14 2003-02-18 Asahi Rubber Inc. Light-emitting diode device
US20030052595A1 (en) * 2001-09-20 2003-03-20 Patent-Treuhand-Gesellschaft Fur Elektrische Gluhlampen Mbh Illumination unit having at least one LED as light source
US6544437B2 (en) * 1999-12-23 2003-04-08 Samsung Sdi Co., Ltd. Yttrium silicate based phosphor having effective emission at low voltages and method for synthesizing the same
US6558574B2 (en) * 1999-12-23 2003-05-06 Samsung Sdi Co., Ltd. Red phosphor having effective emission at low voltages and method for preparing the same using conductive luminescent material
US6657379B2 (en) * 2001-07-16 2003-12-02 Patent-Treuhand-Gesellschaft Fur Elektrische Gluehlampen Mbh Illumination unit having at least one LED as light source
US6670748B2 (en) * 2001-09-25 2003-12-30 Patent-Treuhand-Gesellschaft für elektrische Glühlampen mbH Illumination unit having at least one LED as light source
US6682663B2 (en) * 1999-11-30 2004-01-27 Osram Opto Semiconductors Gmbh Pigment with day-light fluorescence
US6717353B1 (en) * 2002-10-14 2004-04-06 Lumileds Lighting U.S., Llc Phosphor converted light emitting device
US6717349B2 (en) * 2001-05-29 2004-04-06 Antex Industry Co., Ltd. Process for the preparation of pink light-emitting diode with high brightness
US6746295B2 (en) * 1999-04-22 2004-06-08 Osram-Opto Semiconductors Gmbh & Co. Ohg Method of producing an LED light source with lens
US6809781B2 (en) * 2002-09-24 2004-10-26 General Electric Company Phosphor blends and backlight sources for liquid crystal displays
US20040211970A1 (en) * 2003-04-24 2004-10-28 Yoshiaki Hayashimoto Semiconductor light emitting device with reflectors having cooling function
US6869753B2 (en) * 2002-10-11 2005-03-22 Agilent Technologies, Inc. Screen printing process for light emitting base layer
WO2005052087A1 (ja) * 2003-11-26 2005-06-09 Independent Administrative Institution National Institute For Materials Science 蛍光体と蛍光体を用いた発光器具
US20050156510A1 (en) * 2004-01-21 2005-07-21 Chua Janet B.Y. Device and method for emitting output light using group IIB element selenide-based and group IIA element gallium sulfide-based phosphor materials
US20050189863A1 (en) * 2004-02-27 2005-09-01 Dowa Mining Co., Ltd. Phosphor, light source and LED
US20050212397A1 (en) * 2003-10-28 2005-09-29 Nichia Corporation Fluorescent material and light-emitting device
US20050242329A1 (en) * 2003-12-22 2005-11-03 Patent-Treuhand-Gesellschaft Fur Elektrische Gluhlampen Mbh Phosphor and light source comprising such a phosphor
US20060006782A1 (en) * 2004-07-09 2006-01-12 Dowa Mining Co., Ltd. Phosphor, LED and light source
US20060033083A1 (en) * 2004-07-28 2006-02-16 Dowa Mining Co., Ltd. Phosphor and manufacturing method for the same, and light source
US7018345B2 (en) * 2002-12-06 2006-03-28 Hisamitsu Pharmaceutical Co., Inc. Iontophoresis system
US7026755B2 (en) * 2003-08-07 2006-04-11 General Electric Company Deep red phosphor for general illumination applications
US7045826B2 (en) * 2003-03-28 2006-05-16 Korea Research Institute Of Chemical Technology Strontium silicate-based phosphor, fabrication method thereof, and LED using the phosphor
US7077979B2 (en) * 2003-10-10 2006-07-18 The Regents Of The University Of California Red phosphors for solid state lighting
US20070159066A1 (en) * 2005-09-30 2007-07-12 The Regents Of The University Of California Cerium based phosphor materials for solid-state lighting applications
US20070159091A1 (en) * 2004-02-18 2007-07-12 National Institute For Materials Science Light emitting element and lighting instrument
US20070241666A1 (en) * 2006-04-17 2007-10-18 Ho-Seong Jang Yellow light emitting Ce3+-activated silicate phosphor with new composition, manufacturing method thereof and white LEDs including phosphor
US7332106B2 (en) * 2003-08-28 2008-02-19 Mitsubishi Chemical Corporation Light-emitting device and phosphor
US20080054793A1 (en) * 2006-08-30 2008-03-06 Everlight Electronics Co., Ltd. White light-emitting apparatus
US20090212314A1 (en) * 2008-02-27 2009-08-27 The Regents Of The University Of California YELLOW EMITTING PHOSPHORS BASED ON Ce3+-DOPED ALUMINATE AND VIA SOLID SOLUTION FOR SOLID-STATE LIGHTING APPLICATIONS
US20090236969A1 (en) * 2005-03-22 2009-09-24 National Institute For Materials Science Fluorescent substance, process for producing the same, and luminescent device

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5030600A (en) * 1988-10-06 1991-07-09 Benchmark Structural Ceramics Corp. Novel sialon composition
JP2927279B2 (ja) * 1996-07-29 1999-07-28 日亜化学工業株式会社 発光ダイオード
US6504301B1 (en) 1999-09-03 2003-01-07 Lumileds Lighting, U.S., Llc Non-incandescent lightbulb package using light emitting diodes
JP3736357B2 (ja) * 2001-02-06 2006-01-18 松下電器産業株式会社 照明用蛍光体、この照明用蛍光体を用いた発光ダイオード、および蛍光体の塗布方法
JP2004115659A (ja) 2002-09-26 2004-04-15 Sumitomo Chem Co Ltd 真空紫外線励起発光素子用の蛍光体
TWI359187B (en) 2003-11-19 2012-03-01 Panasonic Corp Method for preparing nitridosilicate-based compoun
JP4233466B2 (ja) * 2004-02-12 2009-03-04 三菱化学株式会社 発光装置、照明装置および表示装置
JP4362625B2 (ja) 2004-02-18 2009-11-11 独立行政法人物質・材料研究機構 蛍光体の製造方法
CN100530707C (zh) 2004-02-20 2009-08-19 皇家飞利浦电子股份有限公司 包含辐射源和荧光材料的照明系统
JP4521227B2 (ja) * 2004-07-14 2010-08-11 株式会社東芝 窒素を含有する蛍光体の製造方法
DE102005005263A1 (de) 2005-02-04 2006-08-10 Patent-Treuhand-Gesellschaft für elektrische Glühlampen mbH Gelb emittierender Leuchtstoff und Lichtquelle mit derartigem Leuchtstoff
KR100533922B1 (ko) 2005-08-05 2005-12-06 알티전자 주식회사 황색 형광체 및 이를 이용한 백색 발광 장치
EP1935958A4 (en) 2005-08-10 2010-10-27 Mitsubishi Chem Corp PHOSPHOR AND LUMINESCENT DEVICE USING THE SAME

Patent Citations (49)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2308736A (en) * 1940-08-07 1943-01-19 Gen Electric Luminescent material
US2542349A (en) * 1948-08-05 1951-02-20 Gen Electric Calcium silicate phosphor
US2835636A (en) * 1954-01-07 1958-05-20 Westinghouse Electric Corp Cerium-activated magnesium metaphosphate phosphor, with and without manganese
US3014877A (en) * 1959-06-17 1961-12-26 Thorn Electrical Ind Ltd Luminescent materials
US3360674A (en) * 1964-11-23 1967-12-26 Sylvania Electric Prod Europium and bismuth activated yttrium vanadate phosphor
US5063183A (en) * 1985-08-13 1991-11-05 Tokuyama Soda Kabushiki Kaisha Sinterable aluminum nitride composition, sintered body from this composition and process for producing the sintered body
US5998925A (en) * 1996-07-29 1999-12-07 Nichia Kagaku Kogyo Kabushiki Kaisha Light emitting device having a nitride compound semiconductor and a phosphor containing a garnet fluorescent material
US20010001207A1 (en) * 1996-07-29 2001-05-17 Nichia Kagaku Kogyo Kabushiki Kaisha Light emitting device and display
US6608332B2 (en) * 1996-07-29 2003-08-19 Nichia Kagaku Kogyo Kabushiki Kaisha Light emitting device and display
US6084250A (en) * 1997-03-03 2000-07-04 U.S. Philips Corporation White light emitting diode
US6252254B1 (en) * 1998-02-06 2001-06-26 General Electric Company Light emitting device with phosphor composition
US6278135B1 (en) * 1998-02-06 2001-08-21 General Electric Company Green-light emitting phosphors and light sources using the same
US20030006702A1 (en) * 1999-02-18 2003-01-09 Lumileds Lighting, U.S., Llc Red-deficiency compensating phosphor light emitting device
US6155699A (en) * 1999-03-15 2000-12-05 Agilent Technologies, Inc. Efficient phosphor-conversion led structure
US6746295B2 (en) * 1999-04-22 2004-06-08 Osram-Opto Semiconductors Gmbh & Co. Ohg Method of producing an LED light source with lens
US6682663B2 (en) * 1999-11-30 2004-01-27 Osram Opto Semiconductors Gmbh Pigment with day-light fluorescence
US6357889B1 (en) * 1999-12-01 2002-03-19 General Electric Company Color tunable light source
US6544437B2 (en) * 1999-12-23 2003-04-08 Samsung Sdi Co., Ltd. Yttrium silicate based phosphor having effective emission at low voltages and method for synthesizing the same
US6558574B2 (en) * 1999-12-23 2003-05-06 Samsung Sdi Co., Ltd. Red phosphor having effective emission at low voltages and method for preparing the same using conductive luminescent material
US6521915B2 (en) * 2000-03-14 2003-02-18 Asahi Rubber Inc. Light-emitting diode device
US6717349B2 (en) * 2001-05-29 2004-04-06 Antex Industry Co., Ltd. Process for the preparation of pink light-emitting diode with high brightness
US6657379B2 (en) * 2001-07-16 2003-12-02 Patent-Treuhand-Gesellschaft Fur Elektrische Gluehlampen Mbh Illumination unit having at least one LED as light source
US20030052595A1 (en) * 2001-09-20 2003-03-20 Patent-Treuhand-Gesellschaft Fur Elektrische Gluhlampen Mbh Illumination unit having at least one LED as light source
US6670748B2 (en) * 2001-09-25 2003-12-30 Patent-Treuhand-Gesellschaft für elektrische Glühlampen mbH Illumination unit having at least one LED as light source
US6809781B2 (en) * 2002-09-24 2004-10-26 General Electric Company Phosphor blends and backlight sources for liquid crystal displays
US6869753B2 (en) * 2002-10-11 2005-03-22 Agilent Technologies, Inc. Screen printing process for light emitting base layer
US6717353B1 (en) * 2002-10-14 2004-04-06 Lumileds Lighting U.S., Llc Phosphor converted light emitting device
US7018345B2 (en) * 2002-12-06 2006-03-28 Hisamitsu Pharmaceutical Co., Inc. Iontophoresis system
US7045826B2 (en) * 2003-03-28 2006-05-16 Korea Research Institute Of Chemical Technology Strontium silicate-based phosphor, fabrication method thereof, and LED using the phosphor
US20040211970A1 (en) * 2003-04-24 2004-10-28 Yoshiaki Hayashimoto Semiconductor light emitting device with reflectors having cooling function
US7026755B2 (en) * 2003-08-07 2006-04-11 General Electric Company Deep red phosphor for general illumination applications
US7332106B2 (en) * 2003-08-28 2008-02-19 Mitsubishi Chemical Corporation Light-emitting device and phosphor
US7077979B2 (en) * 2003-10-10 2006-07-18 The Regents Of The University Of California Red phosphors for solid state lighting
US7220369B2 (en) * 2003-10-10 2007-05-22 The Regents Of The University Of California Red phosphors for solid state lighting
US20050212397A1 (en) * 2003-10-28 2005-09-29 Nichia Corporation Fluorescent material and light-emitting device
WO2005052087A1 (ja) * 2003-11-26 2005-06-09 Independent Administrative Institution National Institute For Materials Science 蛍光体と蛍光体を用いた発光器具
US20070007494A1 (en) * 2003-11-26 2007-01-11 National Institute For Materials Science Phosphor and light-emitting equipment using phosphor
US20050242329A1 (en) * 2003-12-22 2005-11-03 Patent-Treuhand-Gesellschaft Fur Elektrische Gluhlampen Mbh Phosphor and light source comprising such a phosphor
US20050156510A1 (en) * 2004-01-21 2005-07-21 Chua Janet B.Y. Device and method for emitting output light using group IIB element selenide-based and group IIA element gallium sulfide-based phosphor materials
US20070159091A1 (en) * 2004-02-18 2007-07-12 National Institute For Materials Science Light emitting element and lighting instrument
US20050189863A1 (en) * 2004-02-27 2005-09-01 Dowa Mining Co., Ltd. Phosphor, light source and LED
US7252788B2 (en) * 2004-02-27 2007-08-07 Dowa Mining Co., Ltd. Phosphor, light source and LED
US20060006782A1 (en) * 2004-07-09 2006-01-12 Dowa Mining Co., Ltd. Phosphor, LED and light source
US20060033083A1 (en) * 2004-07-28 2006-02-16 Dowa Mining Co., Ltd. Phosphor and manufacturing method for the same, and light source
US20090236969A1 (en) * 2005-03-22 2009-09-24 National Institute For Materials Science Fluorescent substance, process for producing the same, and luminescent device
US20070159066A1 (en) * 2005-09-30 2007-07-12 The Regents Of The University Of California Cerium based phosphor materials for solid-state lighting applications
US20070241666A1 (en) * 2006-04-17 2007-10-18 Ho-Seong Jang Yellow light emitting Ce3+-activated silicate phosphor with new composition, manufacturing method thereof and white LEDs including phosphor
US20080054793A1 (en) * 2006-08-30 2008-03-06 Everlight Electronics Co., Ltd. White light-emitting apparatus
US20090212314A1 (en) * 2008-02-27 2009-08-27 The Regents Of The University Of California YELLOW EMITTING PHOSPHORS BASED ON Ce3+-DOPED ALUMINATE AND VIA SOLID SOLUTION FOR SOLID-STATE LIGHTING APPLICATIONS

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
Orna. The Chemical History of Color. Springer New York 2013. Page 15 *

Cited By (57)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20070159066A1 (en) * 2005-09-30 2007-07-12 The Regents Of The University Of California Cerium based phosphor materials for solid-state lighting applications
US8920676B2 (en) 2005-09-30 2014-12-30 The Regents Of The University Of California Cerium based phosphor materials for solid-state lighting applications
US8487337B2 (en) 2006-04-24 2013-07-16 Cree, Inc. Side view surface mount LED
US20070262339A1 (en) * 2006-04-24 2007-11-15 Cree, Inc. Side-View Surface Mount White LED
US8390022B2 (en) 2006-04-24 2013-03-05 Cree, Inc. Side view surface mount LED
US8362512B2 (en) 2006-04-24 2013-01-29 Cree, Inc. Side-view surface mount white LED
US7649209B2 (en) 2006-04-24 2010-01-19 Cree, Inc. Side-view surface mount white LED
US20100090233A1 (en) * 2006-04-24 2010-04-15 Cree, Inc. Side-view surface mount white led
US20080283864A1 (en) * 2007-05-16 2008-11-20 Letoquin Ronan P Single Crystal Phosphor Light Conversion Structures for Light Emitting Devices
EP2060614A2 (en) 2007-11-14 2009-05-20 Cree, Inc. Cerium and europium doped phosphor compositions and light emitting devices including the same
US8119028B2 (en) 2007-11-14 2012-02-21 Cree, Inc. Cerium and europium doped single crystal phosphors
EP2481786A1 (en) 2007-11-14 2012-08-01 Cree, Inc. Cerium and europium doped phosphor compositions and light emitting devices including the same
US20090121615A1 (en) * 2007-11-14 2009-05-14 Cree, Inc. Cerium and Europium Doped Phosphor Compositions and Light Emitting Devices Including the Same
EP2117055A2 (en) 2008-05-05 2009-11-11 Cree, Inc. Method of Fabricating Light Emitting Devices
US20090286335A1 (en) * 2008-05-05 2009-11-19 Cree, Inc. Methods of fabricating light emitting devices by selective deposition of light conversion materials based on measured emission characteristics
US8038497B2 (en) 2008-05-05 2011-10-18 Cree, Inc. Methods of fabricating light emitting devices by selective deposition of light conversion materials based on measured emission characteristics
US20120140438A1 (en) * 2009-07-11 2012-06-07 Merck Patent Gesellschaft Mit Beschrankter Haftung Co-doped silicooxynitrides
US8721925B2 (en) * 2009-07-11 2014-05-13 Merck Patent Gmbh Co-doped silicooxynitrides
US8850743B2 (en) 2009-09-18 2014-10-07 Valoya Oy Lighting assembly
US20200045892A1 (en) * 2009-09-18 2020-02-13 Valoya Oy Light emission source led component, horticultural light, and horticultural lighting fixture
US11089737B2 (en) * 2009-09-18 2021-08-17 Valoya Oy Light emission source LED component, horticultural light, and horticultural lighting fixture
US9516818B2 (en) 2009-09-18 2016-12-13 Valoya Oy Lighting assembly
US10485183B2 (en) 2009-09-18 2019-11-26 Valoya Oy Lighting assembly
CN102597602A (zh) * 2009-09-18 2012-07-18 瓦洛亚公司 园艺led照明器材
US20110096560A1 (en) * 2009-10-23 2011-04-28 Samsung Led Co., Ltd. Phosphor, method for preparing and using the same, light emitting device package, surface light source apparatus and lighting apparatus using red phosphor
US8773012B2 (en) 2009-10-23 2014-07-08 Samsung Electronics Co., Ltd. Phosphor, method for preparing and using the same, light emitting device package, surface light source apparatus and lighting apparatus using red phosphor
US8652357B2 (en) * 2009-10-23 2014-02-18 Samsung Electronics Co., Ltd. Phosphor, method for preparing and using the same, light emitting device package, surface light source apparatus and lighting apparatus using red phosphor
US20120286647A1 (en) * 2010-02-03 2012-11-15 Koninklijke Philips Electronics N.V. Phosphor converted LED
US9991427B2 (en) 2010-03-08 2018-06-05 Cree, Inc. Photonic crystal phosphor light conversion structures for light emitting devices
US20110215355A1 (en) * 2010-03-08 2011-09-08 Van De Ven Antony P Photonic crystal phosphor light conversion structures for light emitting devices
US8821758B2 (en) 2010-03-26 2014-09-02 Samsung Electronics Co., Ltd. Complex crystal phosphor, light emitting device, surface light source apparatus, display apparatus, and lighting device
US20110234118A1 (en) * 2010-03-26 2011-09-29 Samsung Led Co., Ltd. Complex Crystal Phosphor, Light Emitting Device, Surface Light Source Apparatus, Display Apparatus, and Lighting Device
WO2011142770A1 (en) * 2010-05-14 2011-11-17 Lightscape Materials, Inc. Carbonitride based phosphors and light emitting devices using the same
US9985173B2 (en) 2010-07-28 2018-05-29 Sharp Kabushiki Kaisha II-III-N semiconductor nanoparticles and method of making same
GB2482312A (en) * 2010-07-28 2012-02-01 Sharp Kk II-III-V semiconductor material, comprising the Group II elements Zn or Mg, Group III elements In or Ga or Al and Group V elements N or P
US8900489B2 (en) 2010-07-28 2014-12-02 Sharp Kabushiki Kaisha II-III-N semiconductor nanoparticles and method of making same
US9391245B2 (en) 2010-09-20 2016-07-12 Samsung Electronics Co., Ltd. Sialon phosphor, method for producing same, and light-emitting device package using same
CN103314074A (zh) * 2010-09-20 2013-09-18 三星电子株式会社 赛伦磷光体、其制造方法和具有其的发光装置封装件
EP2489717A1 (en) * 2011-01-24 2012-08-22 Panasonic Electric Works Co., Ltd Illumination device
EP2597129A1 (en) * 2011-11-16 2013-05-29 Kabushiki Kaisha Toshiba Luminescent materials on the basis of cerium doped SrSiAlON derivates
US9133391B2 (en) 2011-11-16 2015-09-15 Kabushiki Kaisha Toshiba Luminescent material
EP2837669A4 (en) * 2012-03-16 2015-08-12 Toshiba Kk PHOSPHORE, METHOD FOR THE PRODUCTION OF PHOSPHORUS AND LIGHT-EMITTING DEVICE
US9487696B2 (en) 2012-03-16 2016-11-08 Kabushiki Kaisha Toshiba Phosphor of SiAlON crystal, method for producing phosphor and light emitting device
US9661715B2 (en) 2013-02-08 2017-05-23 Cree, Inc. Solid state light emitting devices including adjustable melatonin suppression effects
US9039746B2 (en) * 2013-02-08 2015-05-26 Cree, Inc. Solid state light emitting devices including adjustable melatonin suppression effects
US9030103B2 (en) 2013-02-08 2015-05-12 Cree, Inc. Solid state light emitting devices including adjustable scotopic / photopic ratio
US9429830B2 (en) * 2014-01-23 2016-08-30 Seiko Epson Corporation Fluorescent light emitting element and projector
US20150205189A1 (en) * 2014-01-23 2015-07-23 Seiko Epson Corporation Fluorescent light emitting element and projector
EP2910621A1 (en) * 2014-02-25 2015-08-26 Kabushiki Kaisha Toshiba Phosphor, light-emitting device and method for producing phosphor
EP2915862A1 (en) * 2014-03-03 2015-09-09 Kabushiki Kaisha Toshiba Phosphor and producing method of phosphor and light-emitting device employing the same
CN104893719A (zh) * 2014-03-03 2015-09-09 株式会社东芝 磷光体和磷光体的制备方法以及使用所述磷光体的发光装置
US20150318451A1 (en) * 2014-04-30 2015-11-05 Kabushiki Kaisha Toshiba Light emitting device
CN105023995A (zh) * 2014-04-30 2015-11-04 株式会社东芝 发光装置
DE102015110258A1 (de) * 2015-06-25 2016-12-29 Osram Gmbh Leuchtstoff, Verfahren zum Herstellen eines Leuchtstoffs und Verwendung eines Leuchtstoffs
US10793774B2 (en) 2015-06-25 2020-10-06 Osram Oled Gmbh Phosphor, method for producing a phosphor and use of a phosphor
CN105038772A (zh) * 2015-07-10 2015-11-11 烟台同立高科新材料股份有限公司 一种硅基氮氧化物led荧光粉及其制备方法
CN108893107A (zh) * 2018-06-21 2018-11-27 东台市天源光电科技有限公司 一种氮化物红色荧光粉及其制备方法

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US20070159066A1 (en) 2007-07-12
EP2236580A2 (en) 2010-10-06
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WO2007041402A3 (en) 2008-11-13
KR20080059419A (ko) 2008-06-27
EP1929502A4 (en) 2010-03-24
US8920676B2 (en) 2014-12-30
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