US20060027327A1 - Apparatus and methods for a low inductance plasma chamber - Google Patents

Apparatus and methods for a low inductance plasma chamber Download PDF

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Publication number
US20060027327A1
US20060027327A1 US11/179,035 US17903505A US2006027327A1 US 20060027327 A1 US20060027327 A1 US 20060027327A1 US 17903505 A US17903505 A US 17903505A US 2006027327 A1 US2006027327 A1 US 2006027327A1
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Prior art keywords
chamber
electrode
plasma chamber
plasma
chamber portion
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English (en)
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Carl Sorensen
John White
Suhail Anwar
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Applied Materials Inc
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Applied Materials Inc
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Assigned to APPLIED MATERIALS, INC. reassignment APPLIED MATERIALS, INC. ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). Assignors: ANWAR, SUHAIL, SORENSEN, CARL A., WHITE, JOHN M.
Publication of US20060027327A1 publication Critical patent/US20060027327A1/en
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32174—Circuits specially adapted for controlling the RF discharge
    • H01J37/32183—Matching circuits

Definitions

  • the present invention relates to electronic device manufacturing and, more particularly, to apparatus and methods for a low inductance plasma chamber.
  • Plasma chambers are typically used to process substrates such as semiconductor wafers, glass plates, polymer substrates, etc.
  • a plasma chamber may contain conducting elements which, when energized by a radio frequency (RF) signal, behave like inductors, such as coils or chokes, and/or like capacitors.
  • RF radio frequency
  • These “effective” inductances and/or “effective” capacitances when driven by an RF signal, generate reactance components in the electrical circuit defined by the plasma chamber and its components. These reactance components can substantially increase the electrical impedance associated with the plasma chamber and the amount of voltage needed to drive the same. As a result, plasma chambers can be inefficient and can experience reliability problems.
  • a plasma chamber that has (1) a chamber size of at least about 1.8 by 2.0 meters; and (2) an effective inductance having an inductive reactance of not more than about 12-15 ohms.
  • a method in certain aspects of the invention, includes providing a plasma chamber having (1) a chamber size of at least about 1.8 by 2.0 meters; and (2) an effective inductance having an inductive reactance of not more than about 12-15 ohms. The method also includes employing the plasma chamber to process substrates used for flat panel displays.
  • a plasma chamber in certain aspects of the invention, includes (1) a first chamber portion having an inner surface; (2) a second chamber portion coupled to the first chamber portion so as to define an inner chamber region; (3) a first electrode positioned a first distance from the first chamber portion; (4) a second electrode positioned between the first electrode and the second chamber portion so as to define a plasma region between the first and second electrodes; and (5) a conductive piece positioned between the first chamber portion and the first electrode and coupled to the first chamber portion so as to create a current path that reduces an effective inductance of the plasma chamber.
  • a plasma chamber in certain aspects of the invention, includes (1) a first chamber portion having an inner surface; (2) a second chamber portion coupled to the first chamber portion so as to define an inner chamber region; (3) a first electrode positioned a first distance from the first chamber portion; and (4) a second electrode positioned between the first electrode and the second chamber portion so as to define a plasma region between the first and second electrodes.
  • the first chamber portion has an increased thickness that creates a current path that reduces an effective inductance of the plasma chamber.
  • FIG. 1 illustrates an exemplary embodiment of the low inductance plasma chamber of the present invention
  • FIG. 2 illustrates another exemplary embodiment of the low inductance plasma chamber of the present invention.
  • the present invention provides a low inductance plasma chamber which can be operated more efficiently and more reliably, and which can be driven or powered by a lower voltage.
  • FIG. 1 illustrates a first exemplary embodiment of a low inductance plasma chamber of the present invention which is designated generally by the reference numeral 100 .
  • the low inductance plasma chamber 100 includes a vacuum chamber enclosure 102 .
  • the vacuum chamber enclosure 102 can be any suitable chamber enclosure such as those chambers which are utilized in the AKT, Inc. Plasma Chamber Models 20K, 25K and/or 25KA.
  • the vacuum chamber enclosure 102 can be manufactured from any suitable material(s) consistent with its use in conjunction with the apparatus and methods of the present invention.
  • the vacuum chamber 102 and its components are manufactured from Aluminum.
  • the vacuum chamber enclosure 102 includes an upper vacuum enclosure 104 and a lower vacuum enclosure 106 .
  • the upper vacuum enclosure 104 and the lower vacuum enclosure 106 are coupled or sealed together in any appropriate and/or suitable manner, as shown, so as to form the vacuum chamber 102 of the low inductance plasma chamber 100 .
  • a sealing element such as an o-ring (not shown) may be used to seal the upper vacuum enclosure 104 relative to the lower vacuum enclosure 106 .
  • the inner walls of the upper vacuum enclosure 104 and the inner walls of the lower vacuum enclosure 106 include electrically conducting materials so as to facilitate the conduction of electrical current along the same within the plasma chamber 100 as described herein.
  • the inside walls of the upper vacuum enclosure 104 and the inside walls of the lower vacuum enclosure 106 can be manufactured from aluminum.
  • the inside walls of the upper vacuum enclosure 104 and/or the inside walls of the lower vacuum enclosure 106 can be manufactured from any other suitable electrical conducting material such as, but not limited to, any suitable non-ferrous material, Brass, or any suitable Nickel Alloy material.
  • the plasma chamber 100 also includes a pair of electrodes, including an upper electrode 108 and a lower electrode 110 , positioned inside the plasma chamber 100 .
  • the lower electrode 110 in the exemplary embodiment, can be used to support a substrate which is to be processed in the plasma chamber 100 .
  • the upper electrode 108 has a lower surface 108 A which faces the lower electrode 110 and an upper surface 108 B which faces a top inner wall of the upper vacuum enclosure 104 .
  • the lower electrode 110 has an upper surface 110 A which faces the upper electrode 108 and which supports a substrate during processing and a lower surface 110 B which faces a bottom inner wall of the lower vacuum enclosure 106 .
  • the lower electrode 110 is adapted to support a substrate which is to be processed.
  • the lower electrode can also include an inner region or chamber 110 C shown in cut-away form in FIG. 1 , and at least one heating element or heating element system 110 D.
  • the heating element or heating element system 110 D can be a resistive heating element or heating element system, or any other suitable heating element or system, which can be used to heat the substrate supported on the lower electrode 110 .
  • the lower electrode 110 in an exemplary embodiment, can also be electrically grounded within the low inductance plasma chamber 100 .
  • the upper electrode 108 and the lower electrode 110 are spaced a pre-determined distance from one another so as to form a gap between the same.
  • the pre-determined distance may be about 0.5-1.5 inches, although other distances may be employed.
  • a plasma or plasma body 111 composed of a processing gas used in a respective electronic device and/or substrate processing step will be formed in the gap or plasma region 112 located between the upper electrode 108 and the lower electrode 110 .
  • the processing gas and/or the plasma 111 which can be utilized may include silane, ammonia, hydrogen, nitrogen argon or any other suitable processing gas or gas mixture.
  • the upper electrode 108 and the lower electrode 110 can be, for example, of the type utilized in the AKT, Inc. Plasma Chamber Models 20K, 25K and/or 25KA or equivalents thereof.
  • the upper electrode 108 and the lower electrode 110 can each be manufactured from aluminum.
  • the upper electrode 108 and the lower electrode 110 can also each be manufactured from any other suitable electrical conducting material such as, but not limited to, any suitable non-ferrous material, Brass, or any suitable Nickel Alloy material.
  • the upper electrode 108 can be a hollow showerhead type electrode having a reservoir 108 C located therein for receiving processing gas and a series of apertures or spray jets 114 through the lower surface 108 A thereof for dispensing the processing gas as described herein.
  • the upper electrode 108 can be any of the upper electrodes utilized in the AKT, Inc. Plasma Chamber Models 20K, 25K and/or 25KA or equivalents thereof.
  • the upper electrode 108 depending upon the application and size of the same, can have in excess of 50,000 apertures 114 which are approximately equal in size so as to achieve an equal flow of gas from each aperture 114 . Other numbers of spray jets or apertures may be used.
  • the upper electrode 108 can receive a respective processing gas which is used in a processing operation from a gas supply 150 via a gas feed tube 116 which is coupled to the upper electrode 108 , as shown in FIG. 1 .
  • the gas feed tube 116 can be electrically coupled to the upper electrode 108 , and manufactured from an electrically conducting material.
  • the gas feed tube can be manufactured from aluminum or any suitable electrical conducting material such as, but not limited to, any suitable non-ferrous material, Brass, or any suitable Nickel Alloy material.
  • the processing gas from the gas supply 150 can be provided under pressure via the gas feed tube 116 into the inside reservoir 108 C of the upper electrode 108 and dispersed through the apertures 114 into the gap 112 between the upper electrode 108 and the lower electrode 110 so as to form a plasma body 111 in the gap 112 .
  • the pressure of the processing gas in the reservoir 108 C can be about 10 Torr while the pressure of the plasma in the plasma body 111 can be about 1 Torr. Other pressures may be employed.
  • a greater flow of the processing gas through the apertures 114 can be achieved.
  • the low inductance plasma chamber 100 can also include a support column 118 which is coupled to, and supports, the lower electrode 110 at the lower portion of the lower vacuum enclosure 106 , as shown.
  • the support column 118 is manufactured from aluminum, and can be any suitable support column such as, but not limited to those support columns utilized in the AKT, Inc. Plasma Chamber Models 20K, 25K and/or 25KA or equivalents thereof.
  • the support column 118 can also be manufactured from any other suitable electrical conducting material such as, but not limited to, any suitable non-ferrous material, Brass, or any suitable Nickel Alloy material.
  • the lower region 120 of the lower vacuum enclosure 106 includes a flexible coupling 122 .
  • the flexible coupling 122 is manufactured from aluminum and/or any other suitable material(s) in any suitable manner consistent with its use in the apparatus 100 of the present invention.
  • the flexible coupling 122 can be any flexible coupling such as, but not limited to, those flexible couplings utilized in the AKT, Inc. Plasma Chamber Models 20K, 25K and/or 25KA or equivalents thereof.
  • the flexible coupling 122 can also be manufactured from any other suitable electrical conducting material such as, but not limited to, any suitable non-ferrous material, Brass, or any suitable Nickel Alloy material.
  • the low inductance plasma chamber 100 can also include an RF delivery cover box 124 which can be connected to the top portion of the upper vacuum enclosure 104 , as shown.
  • the RF delivery cover box 124 can also be electrically coupled to the inside wall of the upper vacuum enclosure 104 .
  • the RF delivery box 124 in the exemplary embodiment, can be adapted to supply an alternating current signal or an RF signal current from an RF Signal Supply 160 to the gas feed tube 116 and to provide a return line of alternating current or RF current from the low inductance plasma chamber 100 to the RF signal source 160 .
  • the RF delivery cover box 124 can be made from aluminum or any other suitable material such as, for example, a non-ferrous material, Brass, or a Nickel Alloy conducting material.
  • the RF delivery cover box 124 can be any suitable electrical delivery cover box device such as, but not limited to, those RF delivery cover boxes utilized in the AKT, Inc. Plasma Chamber Models 20K, 25K and/or 25KA or equivalents thereof.
  • the low inductance plasma chamber 100 also includes a conducting element such as a pan structure 126 which is coupled to, or attached to, the top inside wall of the upper vacuum enclosure 104 , as shown.
  • the pan structure 126 is a conducting element.
  • the pan structure 126 can be manufactured from aluminum.
  • the pan structure 126 can also be manufactured from any suitable electrical conducting material such as, but not limited to, any suitable non-ferrous material, Brass, or any suitable Nickel Alloy material.
  • the pan structure 126 can be sized and shaped in any appropriate manner depending upon the size and shape of the vacuum chamber enclosure 102 and/or the upper vacuum chamber enclosure 104 .
  • the pan structure 126 is formed from aluminum, and has a thickness of about 0.125 inches, a height of about 3 inches, a width of about 1.8 meters and a length of about 2 meters for a plasma chamber adapted to process 1.8 meter ⁇ 2 meter substrates.
  • Other pan shapes, dimensions and/or materials may be used.
  • the pan structure 126 can be positioned a pre-determined distance from the second surface 108 B of the upper electrode 108 .
  • the pre-determined distance between the pan structure 126 and the second surface 108 B of the upper electrode 108 defines a gap between the respective elements.
  • the distance between the pan structure 126 and the second surface 108 B of the upper electrode 108 is about 1.5 inches or less, although other distances may be used.
  • a spacing of about 0.5 to about 2 inches may be used and more preferably about 1-2 inches.
  • a process gas can be supplied from the gas supply 150 to the gas feed tube 116 under suitable pressure while an alternating current or RF signal current can be provided from the RF Signal Supply 160 to the outside surface of the gas feed tube 116 .
  • the process gas flows inside the gas feed tube 116 and into the reservoir 108 C inside the upper electrode 108 .
  • the process gas is then forced out through the series of apertures 114 in the surface 108 A of the upper electrode 108 and into the gap 112 forming plasma body 111 .
  • the RF signal current which is introduced to the outside surface of the gas feed tube 116 , as shown by current arrow 130 , flows downwardly as shown by arrows 131 to the upper surface 108 B of the upper electrode 108 .
  • the RF signal current continues to flow radially outwardly from the base of the gas feed tube 116 onto and along the upper surface 108 B of the upper electrode 108 , as shown by current arrows 132 .
  • the RF signal current flows around the edge of the upper electrode 108 and is capacitively coupled into the plasma body 111 in the gap 112 .
  • the RF signal current has a frequency at or approximately at 13.56 MHz. In another embodiment, a frequency of about 27 MHz may be used. It is to be understood, however, that any appropriate or suitable RF signal frequency can be employed depending upon the plasma chamber utilized, its dimensions, and the operation(s) to be performed.
  • the RF signal current is then capacitively coupled from the bottom of the plasma body 111 to the upper surface 110 A of the lower electrode 110 .
  • the RF signal current then flows radially outwardly across the upper surface 110 A of the lower electrode 110 .
  • the RF signal current then flows around the outer edge of the lower electrode 110 and onto its lower surface 110 B where it flows radially inwardly toward and to the support column 118 as shown by the current arrows.
  • the RF signal current then flows downwardly and along the outer surface of the support column 118 .
  • the RF signal current turns upwardly and flows along the flexible coupling 122 and radially outwardly along the inside walls of the lower vacuum enclosure 106 .
  • the RF signal current continues to flow upwardly and along the inside vertical walls of the respective lower vacuum chamber enclosure 106 and the upper vacuum chamber enclosure 104 .
  • the RF signal current then flows along the top of the inside wall of the upper vacuum enclosure 104 and along the bottom surface 126 A of the pan structure 126 , as shown.
  • the RF signal current flows, as shown by current arrows 133 , along the bottom surface 126 A of the pan structure 126 to the inside of the RF delivery box cover 124 and is returned to the RF Signal Supply 160 as shown by current arrow 135 .
  • the direction and flow of the RF signal current, through the low inductance plasma chamber 100 would then be reversed for the next, or negative, half cycle of the RF signal.
  • the RF signal current flowing along the inside wall of the upper vacuum enclosure 104 would flow along the top wall of the upper vacuum enclosure 104 , as shown by the dashed line arrows 140 , and into the inside of the RF delivery box cover 124 .
  • the RF signal current flows along the top surface 108 B of the upper electrode 108 in a first direction, as shown by current arrow 132 , while current flows along the surface 126 A of the pan structure 126 in an opposite direction as shown by current arrow 133 .
  • the upper surface 108 B of the upper electrode 108 and the pan surface 126 A of the pan structure 126 behave as an inductor having an “effective” inductance which is directly proportional to the size of the gap or the amount of separation between the upper surface 108 B of the upper electrode 108 and the surface 126 A of the pan structure 126 .
  • the placement of the respective current carrying conductors 108 B and 126 A closer to one another, as illustrated in the exemplary embodiment of FIG. 1 , and as effectuated by the use of the pan structure 126 serves to reduce the “effective” inductance, and the resulting inductive reactance, of the electrical circuit which exists in the low inductance plasma chamber 100 .
  • the “effective” inductance created by the parallel transmission line formed by the surface 126 A of the pan structure 126 and the upper surface 108 B of the upper electrode 108 is electrically in series with an “effective” resistance of the low inductance plasma chamber 100 which includes the resistance of the plasma body 111 and any other resistances associated with any of the components of the low inductance plasma chamber 100 .
  • the reactance, as well as the total impedance, of the electrical circuit are reduced.
  • the input voltage needed to drive the low inductance plasma chamber 100 is reduced.
  • the reduction of the input voltage required to drive the low inductance plasma chamber 100 reduces stress or stresses on or in other portions of the RF signal supply and/or in other components of the low inductance plasma chamber 100 and provides for increased efficiencies and reliability in the operation of the same.
  • a conducting element can be formed from an inner wall of a low inductance plasma chamber, thereby dispensing with the need to use a separate pan structure.
  • FIG. 2 illustrates a second exemplary embodiment of the low inductance plasma chamber or apparatus of the present invention which is designated generally by the reference numeral 200 .
  • the low inductance plasma chamber 200 includes a vacuum chamber enclosure 202 .
  • the vacuum chamber enclosure 202 can be manufactured from any suitable material(s) consistent with its use in conjunction with the apparatus and methods of the present invention.
  • the vacuum chamber 202 and its components are manufactured from Aluminum.
  • the vacuum chamber enclosure 202 includes an upper vacuum enclosure 204 and a lower vacuum enclosure 206 .
  • the upper vacuum enclosure 204 and the lower vacuum enclosure 206 are coupled or sealed together in any appropriate and/or suitable manner, as shown, so as to form the vacuum chamber enclosure 202 of the low inductance plasma chamber 200 .
  • a sealing element such as an o-ring (not shown) may be used to seal the upper vacuum enclosure 204 relative to the lower vacuum enclosure 206 .
  • the inner walls of the upper vacuum enclosure 204 and the inner walls of the lower vacuum enclosure 206 include electrically conducting materials so as to facilitate the conduction of electrical current along the same within the plasma chamber 200 as described herein.
  • the inside walls of the upper vacuum enclosure 204 and the inside walls of the lower vacuum enclosure 206 can be manufactured from aluminum.
  • the inside walls of the upper vacuum enclosure 204 and the inside walls of the lower vacuum enclosure 206 can be manufactured from any suitable electrical conducting material such as, but not limited to, any suitable non-ferrous material, Brass, or any suitable Nickel Alloy material.
  • the plasma chamber 200 also includes a pair of electrodes, including an upper electrode 208 and a lower electrode 210 , positioned inside the plasma chamber 200 .
  • the lower electrode 210 in the exemplary embodiment, can be used to support a substrate which is to be processed in the plasma chamber 200 .
  • the upper electrode 208 has a lower surface 208 A which faces the lower electrode 210 and an upper surface 208 B which faces a top inner wall of the upper vacuum enclosure 204 .
  • the lower electrode 210 has an upper surface 210 A which faces the upper electrode 208 and which supports a substrate during processing and a lower surface 210 B which faces a bottom inner wall of the lower vacuum enclosure 206 .
  • the lower electrode 210 is adapted to support a substrate which is to be processed.
  • the lower electrode can also include an inner region or chamber 210 C shown in cut-away form in FIG. 2 , and at least one heating element or heating element system 210 D.
  • the heating element or heating element system 210 D can be a resistive heating element or heating element system, or any other suitable heating element or heating element system, which can be used to heat the substrate supported on the lower electrode 210 .
  • the lower electrode 210 in an exemplary embodiment, can also be electrically grounded within the low inductance plasma chamber 200 .
  • the upper electrode 208 and the lower electrode 210 are spaced a pre-determined distance from one another so as to form a gap between the same.
  • the electrodes 208 , 210 may be spaced by about 0.5-1.5 inches, although other spacings may be used.
  • a plasma or plasma body 211 composed of a processing gas used in a respective substrate processing step will be formed in the gap or a plasma region 212 located between the upper electrode 208 and the lower electrode 210 .
  • the processing gas and/or the plasma or plasma body 211 which can be utilized can include silane, ammonia, hydrogen, nitrogen argon or any other suitable processing gas or gas mixture.
  • the upper electrode 208 and the lower electrode 210 can, for example, be manufactured from aluminum.
  • the upper electrode 208 and the lower electrode 210 can also each be manufactured from any other suitable electrical conducting material such as, but not limited to, any suitable non-ferrous material, Brass, or any suitable Nickel Alloy material.
  • the upper electrode 208 can be a hollow showerhead type electrode having a reservoir 208 C located therein for receiving processing gas and a series of apertures or spray jets 214 through the lower surface 208 A thereof for dispensing the processing gas as described herein.
  • the upper electrode 208 depending upon the application and size of the same, can for example, have in excess of 70,000 apertures 214 which are approximately equal in size so as to achieve an equal flow of gas from each aperture 214 .
  • Other numbers of spray jets or apertures may be used.
  • the upper electrode 208 can receive a respective processing gas which is used in a respective processing operation from a gas supply 250 via a gas feed tube 216 which is coupled to the upper electrode 208 as shown in FIG. 2 .
  • the gas feed tube 216 can be electrically coupled to the upper electrode 208 .
  • the gas feed tube 216 can be manufactured from an electrically conducting material, such as aluminum or any other suitable electrical conducting material such as, but not limited to, any suitable non-ferrous material, Brass or any suitable Nickel Alloy material.
  • the processing gas from the gas supply 250 can be provided under pressure via the gas feed tube 216 into the inside reservoir 208 C of the upper electrode 208 and dispersed through the apertures 214 into the gap between the upper electrode 208 and the lower electrode 210 so as to form a plasma body 211 in the plasma region 212 .
  • the pressure of the processing gas in the reservoir 208 C can be about 10 Torr while the pressure of the plasma in the plasma body 211 can be about 1 Torr. Other pressures may be employed.
  • a greater flow of the processing gas through the apertures 214 can be achieved.
  • the low inductance plasma chamber 200 can also include a support column 218 which is coupled to, and supports, the lower electrode 210 at the lower portion of the lower vacuum enclosure 206 , as shown.
  • the support column 218 is manufactured from aluminum.
  • the support column 218 can be any suitable support column, and can also be manufactured from any other suitable electrical conducting material such as, but not limited to, any suitable non-ferrous material, Brass, or any suitable Nickel Alloy material.
  • the lower region 220 of the lower vacuum enclosure 206 includes a flexible coupling 222 .
  • the flexible coupling 222 is manufactured from aluminum and/or any other suitable material(s) in any suitable manner consistent with its use in the apparatus 200 of the present invention (e.g., any suitable non-ferrous material, Brass, or any suitable Nickel Alloy material).
  • the flexible coupling 222 may be similar to the flexible coupling 122 of FIG. 1 .
  • the low inductance plasma chamber 200 can also include and RF delivery cover box 224 which can be connected to the top portion of the upper vacuum enclosure 204 , as shown.
  • the RF delivery cover box 224 can also be electrically coupled to the inside wall of the upper vacuum enclosure 204 .
  • the RF delivery box 224 in the exemplary embodiment, can be adapted to supply an alternating current signal or an RF signal current from an RF Signal Supply 260 to the gas feed tube 216 and to provide a return line of alternating current or RF current from the low inductance plasma chamber 200 to the RF signal source 260 .
  • the RF delivery cover box 224 can be made of any suitable material, including a conducting material such as, for example, Aluminum, and/or any other non-ferrous material, Brass, or Nickel Alloy conducting material.
  • a conducting material such as, for example, Aluminum, and/or any other non-ferrous material, Brass, or Nickel Alloy conducting material.
  • the conducting material used in the RF delivery cover box 224 can be Aluminum.
  • the RF delivery cover box 224 can be any suitable electrical delivery cover box device, and may be similar to the RF delivery cover box 124 of FIG. 1 .
  • the low inductance plasma chamber 200 also includes a conducting element 226 which is formed as, in, with, and/or on, the top inside wall of the upper vacuum enclosure 204 , as shown in FIG. 2 .
  • the conducting element 226 can be manufactured from aluminum.
  • the conducting element 226 can also be manufactured from any suitable electrical conducting material such as, but not limited to, any suitable non-ferrous material, Brass, or any suitable Nickel Alloy material.
  • the conducting element 226 can be shaped in any appropriate manner depending upon the size and shape of the vacuum chamber enclosure 202 and/or the upper vacuum chamber enclosure 204 .
  • the conducting element 226 is formed and positioned to be parallel with, or substantially parallel with, and to be located at a pre-determined distance from, the second surface 208 B of the upper electrode 208 .
  • the pre-determined distance between the conducting element 226 and the second surface 208 B of the upper electrode 208 defines a gap between the respective elements.
  • the distance between the conducting element 226 and the second surface 208 B of the upper electrode 208 is about 1.5-2 inches, and more preferably about 1.75 inches, although other distances may be employed.
  • a spacing of about 0.25 to about 2 inches may be used and more preferably about 1-2 inches.
  • a process gas can be supplied from the gas supply 250 to the gas feed tube 216 under suitable pressure while an alternating current or RF signal current can be provided from the RF Signal Supply 260 to the outside surface of the gas feed tube 216 .
  • the process gas flows inside the gas feed tube 216 and into the reservoir 208 C inside the upper electrode 208 .
  • the process gas is then forced out through the series of apertures 214 in the surface 208 A of the upper electrode 208 and into the plasma region 212 forming plasma body 211 .
  • the RF signal current which is introduced to the outside surface of the gas feed tube 216 , as shown by current arrow 230 , flows downwardly as shown by arrows 231 to the upper surface 208 B of the upper electrode 208 .
  • the RF signal current continues to flow radially outwardly from the base of the gas feed tube 216 onto and along the upper surface 208 B of the upper electrode 208 , as shown by current arrows 232 .
  • the RF signal current flows around the edge of the upper electrode 208 and is capacitively coupled into the plasma body 211 in the plasma region 212 .
  • the RF signal current has a frequency at or approximately at 13.56 MHz. It is to be understood, however, that any appropriate or suitable RF signal frequency can be employed depending upon the plasma chamber utilized, its dimensions, and the operation(s) to be performed.
  • the RF signal current is then capacitively coupled from the bottom of the plasma body 211 to the upper surface 210 A of the lower electrode 210 .
  • the RF signal current then flows radially outwardly across the upper surface 210 A of the lower electrode 210 .
  • the RF signal current then flows around the outer edge of the lower electrode 210 and onto its lower surface 210 B where it flows radially inwardly toward and to the support column 218 as shown by the current arrows.
  • the RF signal current then flows downwardly and along the outer surface of the support column 218 .
  • the RF signal current turns upwardly and flows along the flexible coupling 222 and radially outwardly along the inside walls of the lower vacuum enclosure 206 .
  • the RF signal current continues to flow upwardly and along the inside vertical walls of the respective lower vacuum chamber enclosure 206 and the upper vacuum chamber enclosure 204 .
  • the RF signal current then flows along the top of the inside wall of the upper vacuum enclosure 204 and along the surface 226 A of the conducting element 226 , as shown.
  • the RF signal current flows, as shown by current arrows 233 , along the surface 226 A of the conducting element 226 to the inside of the RF delivery box cover 224 and is returned to the RF Signal Supply 260 as shown by current arrow 235 .
  • the direction and flow of the RF signal current, through the low inductance plasma chamber 200 would then be reversed for the next, or negative, half cycle of the RF signal.
  • the RF signal current flows along the top surface 208 B of the upper electrode 208 in a first direction, as shown by current arrow 232 , while current flows along the surface 226 A of the conducting element 226 in an opposite direction as shown by current arrow 233 .
  • the upper surface 208 B of the upper electrode 208 and the surface 226 A of the conducting element 226 behave as an inductor having an “effective” inductance which is directly proportional to the size of the gap or the amount of separation between the upper surface 208 B of the upper electrode 208 and the surface 226 A of the conducting element 226 .
  • the placement of the respective current carrying conductors 208 B and 226 A relative to each other serves to reduce the “effective” inductance, and the resulting inductive reactance, of the electrical circuit which exists in the low inductance plasma chamber 200 .
  • the “effective” inductance created by the parallel transmission line formed by the surface 226 A of the conducting element 226 and the upper surface 208 B of the upper electrode 208 is electrically in series with an “effective” resistance of the low inductance plasma chamber 200 which includes the resistance of the plasma body 211 and any other resistances associated with any of the components of the low inductance plasma chamber 200 .
  • the reactance, as well as the total impedance of the electrical circuit are reduced.
  • the input voltage needed to drive the low inductance plasma chamber 200 is reduced.
  • the reduction of the input voltage required to drive the low inductance plasma chamber 200 reduces stress or stresses on or in other portions of the RF signal supply and/or in other components of the low inductance plasma chamber 200 and provides for increased efficiencies and reliability in the operation of the same.
  • the dimensions of the low inductance plasma chamber 100 or 200 can result in an “effective” inductance having an inductive reactance of approximately 12-15 ohms (inductive) and an “effective” resistance of approximately 0.3 to 2.0 ohms for a chamber size of about 1.8 meters by 2.0 meters or greater.
  • a method in at least one embodiment of the invention, includes the steps of providing a plasma chamber having (1) a chamber size of at least about 1.8 by 2.0 meters; and (2) an effective inductance having an inductive reactance of not more than about 12-15 ohms.
  • the method further includes the step of employing the plasma chamber to process substrates used for flat panel displays.
  • the plasma chamber also may have an effective resistance of not more than about 0.3 to 2.0 ohms.

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US11/179,035 2004-07-12 2005-07-11 Apparatus and methods for a low inductance plasma chamber Abandoned US20060027327A1 (en)

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US20140008021A1 (en) * 2008-12-10 2014-01-09 Jusung Engineering Co., Ltd. Substrate treatment apparatus
KR20150022791A (ko) * 2012-06-01 2015-03-04 디에스엠 아이피 어셋츠 비.브이. 음료의 미네랄 보충제
WO2017205178A1 (en) * 2016-05-27 2017-11-30 Applied Materials, Inc. Electrostatic chuck impedance evaluation
US20190211452A1 (en) * 2018-01-09 2019-07-11 Boe Technology Group Co., Ltd. Plasma enhanced chemical vapor deposition equipment
US11380520B2 (en) * 2017-11-17 2022-07-05 Evatec Ag RF power delivery to vacuum plasma processing
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CN114121581B (zh) * 2020-08-27 2024-04-05 中微半导体设备(上海)股份有限公司 等离子体处理装置

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US7570130B2 (en) 2004-07-12 2009-08-04 Applied Materials, Inc. Apparatus and methods for a fixed impedance transformation network for use in connection with a plasma chamber
US10600610B2 (en) 2008-12-10 2020-03-24 Jusung Engineering Co., Ltd. Substrate treatment apparatus
US20140008021A1 (en) * 2008-12-10 2014-01-09 Jusung Engineering Co., Ltd. Substrate treatment apparatus
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KR20150022791A (ko) * 2012-06-01 2015-03-04 디에스엠 아이피 어셋츠 비.브이. 음료의 미네랄 보충제
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US11380520B2 (en) * 2017-11-17 2022-07-05 Evatec Ag RF power delivery to vacuum plasma processing
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KR20060050031A (ko) 2006-05-19
US7570130B2 (en) 2009-08-04
JP2006101480A (ja) 2006-04-13
CN1770950A (zh) 2006-05-10
TW200608841A (en) 2006-03-01
US20060017386A1 (en) 2006-01-26
CN1770238A (zh) 2006-05-10
JP2011066907A (ja) 2011-03-31
TWI356656B (en) 2012-01-11
TWI303954B (en) 2008-12-01
JP5670694B2 (ja) 2015-02-18
TW200608842A (en) 2006-03-01
CN100426941C (zh) 2008-10-15
JP2006032954A (ja) 2006-02-02
CN100511357C (zh) 2009-07-08
KR100648336B1 (ko) 2006-11-23
KR100767812B1 (ko) 2007-10-17

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