CN117612918A - 用于基座的rf接地配置 - Google Patents

用于基座的rf接地配置 Download PDF

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CN117612918A
CN117612918A CN202311588325.1A CN202311588325A CN117612918A CN 117612918 A CN117612918 A CN 117612918A CN 202311588325 A CN202311588325 A CN 202311588325A CN 117612918 A CN117612918 A CN 117612918A
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coupled
electrode
capacitor
inductor
filter
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S·托卡奇丘
爱德华四世·P·哈蒙德
V·卡尔塞卡尔
Z·J·叶
A·A·哈贾
V·K·普拉巴卡尔
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Applied Materials Inc
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Priority claimed from CN201980029768.2A external-priority patent/CN112106169B/zh
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Abstract

本公开的实施例总体上涉及用于工艺腔室的基板支撑件以及与其一起使用的RF接地配置。还描述了将RF电流接地的方法。腔室主体至少部分地在其中界定工艺容积。第一电极设置在工艺容积中。基座与第一电极相对地设置。第二电极设置在基座中。RF滤波器通过导电杆耦接到第二电极。RF滤波器包括耦接到导电杆和接地的第一电容器。RF滤波器还包括耦接到馈通箱的第一电感器。馈通箱包括以串联耦接的第二电容器和第二电感器。用于第二电极的直流(DC)功率供应器耦接在第二电容器和第二电感器之间。

Description

用于基座的RF接地配置
本申请是申请日为2019年04月23日的、申请号为“201980029768.2”的、发明名称为“用于基座的RF接地配置”的发明专利申请的分案申请。
背景
技术领域
本公开的实施例总体上涉及用于工艺腔室的基板支撑件，以及与其一起使用的RF接地配置。
相关技术的描述
射频(RF)功率用于基板(如半导体基板)的处理中，以用于等离子体生成、静电吸附等。在一些处理系统中，RF功率经由电容耦接被供应到第一电极以及输送到第二电极(如基板支撑件)。第二电极经由电连接而耦接到功率供应器，以允许RF功率返回到源，从而完成RF电路。
在传统配置中，RF带(strap)有助于RF功率通过RF滤波器流到RF电缆。高RF电流和长处理时间使得RF电缆过热，导致部件劣化或电弧作用。
因此，需要改良的RF接地配置。
发明内容
在一个实施例中，提供了一种设备，其包括腔室主体，腔室主体至少部分地在其中界定工艺容积。基座设置在工艺容积中。第一电极与基座相对地设置在工艺容积中。第二电极设置在基座中。导电杆耦接到第二电极。射频(RF)滤波器包括第一电容器，第一电容器耦接到导电杆且耦接到接地。RF滤波器还包括LC谐振电路与第二电容器，LC谐振电路耦接到导电杆，第二电容器耦接到LC谐振电路且耦接到接地。
在另一个实施例中，提供了一种设备，其包括腔室主体，腔室主体至少部分地在其中界定工艺容积。基座设置在工艺容积中。第一电极与基座相对地设置在工艺容积中。第二电极设置在基座中。导电杆耦接到第二电极。RF滤波器耦接到导电杆。RF滤波器包括第一电容器与第一电感器，第一电容器耦接到导电杆，第一电感器耦接到导电杆。馈通箱包括以串联耦接的第二电感器和第二电容器。功率供应器通过馈通箱和RF滤波器耦接到第二电极。
在又一个实施例中，提供了一种设备，其包括腔室主体，腔室主体至少部分地在其中界定工艺容积。基座设置在工艺容积中。基座包括基板支撑件和轴，该轴耦接到腔室主体以支撑基板支撑件。第一电极与基座相对地设置在工艺容积中。第二电极设置在基座中。导电杆延伸穿过基座的轴且耦接到第二电极。RF滤波器设置在外壳中且耦接到导电杆。RF滤波器包括第一电容器与第一电感器，第一电容器耦接到导电杆且耦接到外壳，第一电感器耦接到导电杆。馈通箱包括以串联耦接的第二电感器和第二电容器。电缆耦接到第一电感器且耦接到第二电感器。功率供应器通过馈通箱和RF滤波器耦接到第二电极。功率供应器在第二电感器和第二电容器之间耦接。
附图说明
为了能够详细理解本公开的上述特征的方式，可以参考实施例得到上文所简要概述的本公开的更具体的描述，一些实施例在附图中示出。然而，值得注意的是，因为本公开可允许其他等效的实施例，故附图仅示出了示例性实施例且不会视为其范围的限制。
图1示出了根据本公开的一个方面的工艺腔室。
图2示出了根据本公开的一个方面的基座和RF接地配置。
图3示出了利用底部调谐器的传统RF接地配置。
为便于理解，在可能的情况下，使用相同的参考标号代表附图中共有相同的元件。可以预期的是一个实施例的元件与特征可有利地结合在其他实施例中而无需赘述。
具体实施方式
本公开的实施例总体上涉及用于工艺腔室的基板支撑件，以及与其一起使用的RF接地配置。还描述了将RF电流接地的方法。腔室主体至少部分地在其中界定工艺容积。第一电极设置在工艺容积中。基座与第一电极相对地设置。第二电极设置在基座中。RF滤波器通过导电杆耦接到第二电极。RF滤波器包括第一电容器，第一电容器耦接到导电杆且耦接到接地。RF滤波器还包括耦接到馈通箱的第一电感器。馈通箱包括以串联耦接的第二电容器和第二电感器。用于第二电极的直流(DC)功率供应器耦接在第二电容器和第二电感器之间。
图1示出了根据本公开的一个实施例的工艺腔室100。工艺腔室100包括腔室主体102，腔室主体102至少部分地在其中界定工艺容积104。基座110设置在工艺容积104中。RF接地配置120耦接到基座110。电极101(如喷淋头)与基座110相对地设置。RF功率106耦接到电极101，以促进工艺腔室100内的等离子体生成。在处理期间，来自RF功率源106的功率电容性耦接到基座110。
基座110包括基板支撑件111，基板支撑件111设置在支撑轴112的上端处。基板支撑件111由陶瓷材料(如氮化铝)形成，而支撑轴112由金属(如铝)或陶瓷(如氮化铝)形成。电阻加热元件(未示出)可以可选地设置在基板支撑件111中，以促进基板支撑件111的温度调节。电极113(如RF网格)设置在基板支撑件111中，以促进工艺腔室100内的等离子体生成。导电杆107(如RF杆)耦接到电极113且穿过轴112延伸到RF滤波器114。RF滤波器114可经配置为通滤波器(pass filter，如，使所需要的RF频率通过，同时阻挡不需要的频率)，可经配置为阻断滤波器(blocking filter，如，经配置为限制或禁止通过等离子体传导的RF能量离开工艺腔室)，或可经配置为将RF和DC功率组合在单一电极(如电极113或基座110内的另一电极)上。
RF滤波器114包括设置在其中的第一电容器130和第一电感器132。第一电容器130设置在RF杆107到RF滤波器114的导电壳体114a之间，并将RF杆107电连接到RF滤波器114的导电壳体114a。以这种方式，由RF杆107传导的RF电流通过第一电容器130传导到导电(如，接地)壳体114a，然后传导到工艺腔室100的导电(如，接地)腔室主体102的内表面。然后，RF电流可返回到RF功率发生器106的接地。第一电感器132在电极113和RF电缆117之间以串联耦接。第一电感器132有助于阻挡流过RF电缆117的残余RF电流。在一个示例中，通过RF滤波器114的13.56MHz的RF电流在RF接地配置120中约为2.5A(rms)。
与传统方法相比，通过将RF功率电流引导到腔室主体102的内表面，第一电容器130和第一电感器132的组合减少流过RF电缆117的RF电流。在一个示例中，与传统方法相比，流过RF电缆117的RF功率电流减小了约90百分比(％)。因此，减少了工艺腔室100中的电弧作用和部件劣化。另外，在本说明书中揭示的实施例中，RF电缆117承载小于3A(rms)，使得与传统方法相比，RF电缆在较冷的温度下操作。因为RF电缆117在较冷的温度下操作，所以减轻了电连接的非预期性或不期望的焊料回流。此外，减少了工艺腔室100内的电弧作用。
RF电缆117还耦接到静电卡盘(ESC)馈通箱125。高压直流(HV DC)功率供应器126向ESC馈通箱125输入功率，以促进位于基座110内的静电卡盘(未示出)的操作。ESC馈通箱125促进HV DC电流传导通过RF电缆117、通过RF滤波器114以及传导到基座110和电极113。
ESC馈通箱125包括在HV DC功率供应器126和RF电缆117之间以串联设置的电容器136和电感器134。与传统方法相比，大幅简化ESC馈通箱125，例如，省略了可变电容器(如通常称为“底部调谐器”)。馈通箱125耦接到接地。
图2示出了根据本公开的一个方面的基座110和与其耦接的RF接地配置220。可使用RF接地配置220来代替图1中所示的RF接地配置120。RF接地配置220包括RF滤波器214。RF滤波器214包括与LC谐振电路240串联设置的电容器230。LC谐振电路240包括彼此以并联设置的电容器234和电感器232。ESC电缆236将来自HV DC功率供应器126的HV DC功率通过RF电缆117传导到基座110。电容器238将RF电缆117耦接到RF滤波器214的导电壳体214a。
在图2的示例中，RF功率(例如，在13.56MHz的频率下)通过工艺腔室(如工艺腔室100)中的等离子体耦接到RF网格或基座110内的另一电极。RF网格或其他电极经由电容器230透过RF杆107连接到接地。电容器230的电容经选择成使得电容器230为13.56MHz的RF电流提供虚拟接地。而且，电容器230经选择成使得加热器对接地阻抗匹配已知的值。LC谐振电路240促进阻挡流过RF电缆117的任何残余RF电流。当与图1中所示的RF接地配置120相比时，LC谐振电路240提供比第一电感器132更高的阻抗。电容器238促进横跨RF电缆117的RF电压的接地，使得横跨RF电缆117的电压(以及因此电流)为零或接近零。在一个示例中，RF电压小于10V(rms)。在一个示例中，通过RF滤波器214的输出处的传感器测量的13.56MHz的RF电流约为0.5A(rms)。
图3示出了传统的RF接地配置320。传统的RF接地配置320耦接到基座310。基座可设置在工艺腔室中，如关于图1描述的工艺腔室100。RF接地配置320包括RF滤波器314和底部调谐器340。RF杆312穿过基座310的轴延伸到RF滤波器314。RF滤波器314在其中包括RF带316，RF带316将RF杆312耦接到RF电缆318。RF电缆318连接到底部调谐器340。底部调谐器340包括可变电容器342和电感器344，其与固定电容器348和电感器346以并联设置。在传统的RF接地配置320中，从基座310传导的所有RF电流通过底部调谐器340接地到工艺腔室的主体，底部调谐器340继而连接到RF功率发生器接地。在这样的配置中，底部调谐器340内的13.56MHz的RF电流约为25A(rms)，这导致先前所论述的问题。
尽管前面所述是针对本公开的实施例，但在不背离本公开的基本范围下，可设计本公开的其他与进一步的实施例，且本公开的范围由所附权利要求书的范围所确定。

Claims (20)

1.一种设备，所述设备包括：
腔室主体，所述腔室主体至少部分地在其中界定工艺容积；
基板支撑件，所述基板支撑件设置在所述工艺容积中；
轴，所述轴耦接到所述基板支撑件；
第一电极，所述第一电极与所述基板支撑件相对地设置在所述工艺容积中；
第二电极，所述第二电极设置在所述基板支撑件中；
导电杆，所述导电杆延伸穿过所述轴，所述导电杆耦接到所述第二电极；
RF滤波器，所述RF滤波器设置在外壳中且耦接到所述导电杆，所述外壳被配置为耦接到接地并且所述导电杆延伸穿过所述外壳的顶部，并且所述RF滤波器包括：
第一电容器，所述第一电容器耦接到所述导电杆并且耦接到所述外壳；以及
第一电感器，所述第一电感器耦接到所述导电杆；
馈通箱，所述馈通箱被配置为耦接到接地，所述馈通箱包括以串联耦接的第二电感器和第二电容器；
RF电缆，所述RF电缆至少部分地在所述外壳与所述馈通箱之间延伸，所述RF电缆设置为与所述第二电感器和所述RF滤波器串联；以及
功率供应器，所述功率供应器通过所述第二电感器和所述RF滤波器耦接到所述第二电极，所述功率供应器耦接在所述第二电感器与所述第二电容器之间。
2.如权利要求1所述的设备，其中所述第一电容器为来自所述第二电极的RF功率创建接地路径。
3.如权利要求1所述的设备，进一步包括：
RF源，所述RF源耦接到所述第一电极。
4.如权利要求3所述的设备，其中从所述RF源到所述第一电极的RF功率具有13.56MHz的频率。
5.如权利要求1所述的设备，其中所述第二电容器耦接到所述馈通箱。
6.如权利要求1所述的设备，其中所述RF滤波器的所述外壳至少部分地延伸穿过所述腔室主体。
7.如权利要求6所述的设备，其中所述导电杆从所述第二电极延伸。
8.如权利要求6所述的设备，其中所述功率供应器耦接到所述第二电容器与所述第二电感器之间的位置。
9.如权利要求6所述的设备，其中所述第二电容器被配置为耦接到接地。
10.如权利要求1所述的设备，其中所述外壳围绕所述第一电容器和所述第一电感器。
11.如权利要求1所述的设备，其中所述导电杆从所述第二电极延伸。
12.如权利要求1所述的设备，其中所述功率供应器耦接到所述第二电容器与所述第二电感器之间的位置。
13.一种用于处理基板的设备，包括：
基板支撑件；
轴；
电极，所述电极设置在所述基板支撑件中；
导电杆，所述导电杆耦接到所述电极；
RF滤波器，所述RF滤波器耦接到所述导电杆，所述RF滤波器包括：
导电壳体，所述导电壳体被配置为耦接到地，所述导电杆延伸穿过所述轴并且穿过所述导电壳体的顶部，
第一电容器，所述第一电容器耦接在所述导电杆与所述导电壳体之间，以及
第一电感器，所述第一电感器耦接到所述导电杆；
馈通箱，所述馈通箱被配置为耦接到接地，所述馈通箱具有设置在其中的以串联耦接的第二电感器和第二电容器，所述第二电容器耦接在所述第二电感器与所述馈通箱之间；
RF电缆，所述RF电缆至少部分地在所述导电壳体与所述馈通箱之间延伸，所述RF电缆设置为与所述RF滤波器和所述馈通箱的所述第二电感器串联；以及
功率供应器，所述功率供应器通过所述第二电感器和所述RF滤波器耦接到所述电极。
14.如权利要求13所述的设备，其中所述RF滤波器的所述导电壳体至少部分地延伸穿过所述腔室主体，所述腔室主体至少部分地界定所述设备的工艺容积。
15.如权利要求13所述的设备，其中所述导电壳体围绕所述第一电容器和所述第一电感器。
16.如权利要求13所述的设备，其中所述第一电容器为来自所述电极的RF功率创建接地路径。
17.如权利要求13所述的设备，进一步包括：
第二电极；以及
RF源，所述RF源耦接到所述第二电极。
18.如权利要求17所述的设备，其中从所述RF源到所述第二电极的RF功率具有13.56MHz的频率。
19.如权利要求13所述的设备，其中所述第二电容器耦接至所述馈通箱。
20.一种用于处理基板的设备，包括：
基板支撑件；
电极，所述电极设置在所述基板支撑件中；
导电杆，所述导电杆耦接到所述电极；
RF滤波器，所述RF滤波器耦接到所述导电杆，所述RF滤波器包括：
第一电感器，所述第一电感器耦接到所述导电杆，以及
第一电感器，所述第一电感器耦接到所述导电杆；
馈通箱，所述馈通箱具有设置在其中的以串联耦接的第二电感器和第二电容器；以及
功率供应器，所述功率供应器通过所述馈通箱和所述RF滤波器耦接到所述电极。
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