TWI828686B - 用於基座的射頻(rf)接地配置 - Google Patents

用於基座的射頻(rf)接地配置 Download PDF

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TWI828686B
TWI828686B TW108115374A TW108115374A TWI828686B TW I828686 B TWI828686 B TW I828686B TW 108115374 A TW108115374 A TW 108115374A TW 108115374 A TW108115374 A TW 108115374A TW I828686 B TWI828686 B TW I828686B
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coupled
capacitor
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薩亞 托卡其珠
愛德華Ｐ 韓蒙得五世
費倫 卡瑟喀爾
正約翰 葉
艾比杜亞西斯 克哈嘉
維納Ｋ 普拉博哈卡爾
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美商應用材料股份有限公司
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Abstract

本揭示案的實施例一般係關於用於處理腔室的基板支撐件以及與其一起使用的RF接地配置。亦描述了將RF電流接地的方法。腔室主體至少部分地在其中界定處理空間。第一電極設置在處理空間中。基座與第一電極相對設置。第二電極設置在基座中。RF濾波器通過導電桿耦接到第二電極。RF濾波器包括耦接到導電桿和接地的第一電容器。RF濾波器亦包括耦接到饋通箱的第一電感器。饋通箱包括以串聯耦接的第二電容器和第二電感器。用於第二電極的直流（DC）電源供應器耦接在第二電容器和第二電感器之間。

Description

用於基座的射頻(RF)接地配置
本揭示案的實施例一般係關於用於處理腔室的基板支撐件，以及與其一起使用的RF接地配置。
射頻（RF）功率用於基板（如半導體基板）處理中，以用於產生電漿、靜電吸附等。在一些處理系統中，RF功率經由電容耦接被供應到第一電極以及輸送到第二電極（如基板支撐件）。第二電極經由電連接而耦接到電源供應器，以允許RF功率返回到源，從而完成RF電路。
在傳統配置中，RF帶（RF strap）有助於RF功率通過RF濾波器流到RF電纜。高RF電流和長處理時間使得RF電纜過熱，導致部件劣化或電弧作用。
因此，需要改良RF接地配置。
在一個實施例中，提供了一種設備，其包括腔室主體，腔室主體至少部分地在其中界定處理空間。基座設置在處理空間中。第一電極與基座相對地設置在處理空間中。第二電極設置在基座中。導電桿耦接到第二電極。射頻（RF）濾波器包括第一電容器，第一電容器耦接到導電桿且耦接接地。RF濾波器亦包括LC諧振電路與第二電容器，LC諧振電路耦接到導電桿，第二電容器耦接到LC諧振電路且耦接接地。
在另一個實施例中，提供了一種設備，其包括腔室主體，腔室主體至少部分地在其中界定處理空間。基座設置在處理空間中。第一電極與基座相對地設置在處理空間中。第二電極設置在基座中。導電桿耦接到第二電極。RF濾波器耦接到導電桿。RF濾波器包括第一電容器與第一電感器，第一電容器耦接到導電桿，第一電感器耦接到導電桿。饋通箱包括以串聯耦接的第二電感器和第二電容器。電源供應器通過饋通箱和RF濾波器耦接到第二電極。
在又一個實施例中，提供了一種設備，其包括腔室主體，腔室主體至少部分地在其中界定處理空間。基座設置在處理空間中。基座包括基板支撐件和軸，該軸耦接到腔室主體以支撐基板支撐件。第一電極與基座相對地設置在處理空間中。第二電極設置在基座中。導電桿延伸穿過基座的軸且耦接到第二電極。RF濾波器設置在殼體中且耦接到導電桿。RF濾波器包括第一電容器與第一電感器，第一電容器耦接到導電桿且耦接到殼體，第一電感器耦接到導電桿。饋通箱包括以串聯耦接的第二電感器和第二電容器。電纜耦接到第一電感器且耦接到第二電感器。電源供應器通過饋通箱和RF濾波器耦接到第二電極。電源供應器在第二電感器和第二電容器之間耦接。
本揭示案的實施例一般係關於用於處理腔室的基板支撐件，以及與其一起使用的RF接地配置。亦描述了將RF電流接地的方法。腔室主體至少部分地在其中界定處理空間。第一電極設置在處理空間中。基座與第一電極相對設置。第二電極設置在基座中。RF濾波器通過導電桿耦接到第二電極。RF濾波器包括第一電容器，第一電容器耦接到導電桿且耦接接地。RF濾波器亦包括耦接到饋通箱的第一電感器。饋通箱包括以串聯耦接的第二電容器和第二電感器。用於第二電極的直流（DC）電源供應器耦接在第二電容器和第二電感器之間。
圖1示出了根據本揭示案的一個實施例的處理腔室100。處理腔室100包括腔室主體102，腔室主體102至少部分地在其中界定處理空間104。基座110設置在處理空間104中。RF接地配置120耦接到基座110。電極101（如噴頭）與基座110相對設置。RF電源106耦接到電極101，以利於處理腔室100內的電漿產生。在處理期間，來自RF電源106的功率電容耦接到基座110。
基座110包括基板支撐件111，基板支撐件111設置在支撐軸112的上端處。基板支撐件111由陶瓷材料（如氮化鋁）形成，而支撐軸112由金屬（如鋁）或陶瓷（如氮化鋁）形成。電阻加熱元件（未圖示）可以可選地設置在基板支撐件111中，以利於基板支撐件111的溫度調節。電極113（如RF網格）設置在基板支撐件111中，以利於處理腔室100內的電漿產生。導電桿107（如RF桿）耦接到電極113且穿過軸112延伸到RF濾波器114。RF濾波器114可經配置為通濾波器（pass filter，如，使所需要的RF頻率通過，同時阻擋不需要的頻率），可經配置為阻斷濾波器（blocking filter，如，經配置為限制或禁止通過電漿傳導的RF能量離開處理腔室），或可經配置為將RF和DC功率組合在單一電極（如電極113或基座110內的另一電極）上。
RF濾波器114包括設置在其中的第一電容器130和第一電感器132。第一電容器130設置在RF桿107到RF濾波器114的導電殼體114a之間，並將RF桿107電連接到RF濾波器114的導電殼體114a。以這種方式，由RF桿107傳導的RF電流通過第一電容器130傳導到導電（如，接地）殼體114a，然後傳導到處理腔室100的導電（如，接地）腔室主體102的內表面。然後，RF電流可返回到RF功率產生器106的接地。第一電感器132在電極113和RF電纜117之間以串聯耦接。第一電感器132有助於阻擋流過RF電纜117的殘餘RF電流。在一個實例中，通過RF濾波器114的13.56 MHz的RF電流在RF接地配置120中約為2.5 A（rms）。
與傳統方法相比，通過將RF功率電流引導到腔室主體102的內表面，第一電容器130和第一電感器132的組合減少流過RF電纜117的RF電流。在一個實例中，與傳統方法相比，流過RF電纜117的RF功率電流減小了約90百分比（%）。因此，減少了處理腔室100中的電弧作用和部件劣化。另外，在本說明書中揭示的實施例中，RF電纜117承載小於3 A（rms），使得與傳統方法相比，RF電纜在較冷的溫度下操作。因為RF電纜117在較冷的溫度下操作，所以減輕了電連接的非預期性或不期望的焊料回流。此外，減少了處理腔室100內的電弧作用。
RF電纜117亦耦接到靜電卡盤（ESC）饋通箱125。高壓直流（HV DC）電源供應器126向ESC饋通箱125輸入功率，以利於位於基座110內的靜電卡盤（未圖示）的操作。ESC饋通箱125利於HV DC電流傳導通過RF電纜117、通過RF濾波器114以及傳導到基座110和電極113。
ESC饋通箱125包括在HV DC電源126和RF電纜117之間以串聯設置的電容器136和電感器134。與傳統方法相比，大幅簡化ESC饋通箱125，例如，省略可變電容器（如通常稱為「底部調諧器」）。饋通箱125耦接接地。
圖2示出了根據本揭示案的一個態樣的基座110和與其耦接的RF接地配置220。可使用RF接地配置220來代替圖1中所示的RF接地配置120。RF接地配置220包括RF濾波器214。RF濾波器214包括與LC諧振電路240串聯設置的電容器230。LC諧振電路240包括彼此以並聯設置的電容器234和電感器232。ESC電纜236將來自HV DC電源供應器126的HV DC功率透過RF電纜117傳導到基座110。電容器238將RF電纜117耦接到RF濾波器214的導電殼體214a。
在圖2的實例中，RF功率（例如，在13.56 MHz的頻率下）透過處理腔室（如處理腔室100）中的電漿耦接到RF網格或基座110內的另一電極。RF網格或其他電極經由電容器230透過RF桿107連接到接地。選擇電容器230的電容，使得電容器230為13.56 MHz的RF電流提供虛擬接地。而且，選擇電容器230使得加熱器對接地阻抗匹配一已知的一值。LC諧振電路240利於阻擋流過RF電纜117的任何殘餘RF電流。當與圖1中所示的RF接地配置120相比時，LC諧振電路240提供比第一電感器132更高的阻抗。電容器238利於橫跨（across）RF電纜117的RF電壓的接地，使得橫跨RF電纜117的電壓（以及因此電流）為零或接近零。在一個實例中，RF電壓小於10 V（rms）。在一個實例中，透過RF濾波器214的輸出處的感測器量測的13.56 MHz的RF電流約為0.5 A（rms）。
圖3示出了傳統的RF接地配置320。傳統的RF接地配置320耦接到基座310。基座可設置在處理腔室中，如關於圖1描述的處理腔室100。RF接地配置320包括RF濾波器314和底部調諧器340。RF桿312穿過基座310的軸延伸到RF濾波器314。RF濾波器314在其中包括RF帶316，RF帶316將RF桿312耦接到RF電纜318。RF電纜318連接到底部調諧器340。底部調諧器340包括可變電容器342和電感器344，其與固定電容器348和電感器346以並聯設置。在傳統的RF接地配置320中，從基座310傳導的所有RF電流透過底部調諧器340接地到處理腔室的主體，底部調諧器340繼而連接到RF功率產生器接地。在這樣的配置中，底部調諧器340內的13.56 MHz的RF電流約為25 A（rms），這導致先前所論述的問題。
儘管前面所述係針對本揭示案的實施例，但在不背離本揭示案的基本範圍下，可設計本揭示案的其他與進一步的實施例，且本揭示案的範圍由以下專利申請範圍所確定。
100‧‧‧處理腔室 101‧‧‧電極 102‧‧‧腔室主體 104‧‧‧處理空間 106‧‧‧RF電源 107‧‧‧導電桿 110‧‧‧基座 111‧‧‧基板支撐件 112‧‧‧支撐軸 113‧‧‧電極 114‧‧‧RF濾波器 114a‧‧‧導電殼體 117‧‧‧RF電纜 120‧‧‧RF接地配置 125‧‧‧ESC饋通箱 126‧‧‧HV‧‧‧DC電源供應器 130‧‧‧第一電容器 132‧‧‧第一電感器 134‧‧‧電感器 136‧‧‧電容器 214‧‧‧RF濾波器 214a‧‧‧導電殼體 220‧‧‧RF接地配置 230‧‧‧電容器 232‧‧‧電感器 234‧‧‧電容器 236‧‧‧ESC電纜 238‧‧‧電容器 240‧‧‧LC諧振電路 310‧‧‧基座 312‧‧‧RF桿 314‧‧‧RF濾波器 316‧‧‧RF帶 318‧‧‧RF電纜 320‧‧‧RF接地配置 340‧‧‧底部調諧器 342‧‧‧可變電容器 344‧‧‧電感器 346‧‧‧電感器 348‧‧‧電容器
為了能夠詳細理解本揭示案的上述特徵所用方式，上文所簡要概述的本揭示案的更具體描述可參考實施例進行，一些實施例在所附圖式中示出。然而，值得注意的是，因為本揭示案可允許其他等效之實施例，故所附圖式僅示出了示範實施例且不會視為其範圍之限制。
圖1示出了根據本揭示案的一個態樣的處理腔室。
圖2示出了根據本揭示案的一個態樣的基座和RF接地配置。
圖3示出了利用底部調諧器的傳統RF接地配置。
為便於理解，在可能的情況下，使用相同的元件符號代表圖式中共有相同的元件。可以預期的是一個實施例的元件與特徵可有利地結合在其他實施例中而無需贅述。
國內寄存資訊 (請依寄存機構、日期、號碼順序註記) 無
國外寄存資訊 (請依寄存國家、機構、日期、號碼順序註記) 無
100‧‧‧處理腔室
101‧‧‧電極
102‧‧‧腔室主體
104‧‧‧處理空間
106‧‧‧RF電源
107‧‧‧導電桿
110‧‧‧基座
111‧‧‧基板支撐件
112‧‧‧支撐軸
113‧‧‧電極
114‧‧‧RF濾波器
114a‧‧‧導電殼體
117‧‧‧RF電纜
120‧‧‧RF接地配置
125‧‧‧ESC饋通箱
126‧‧‧HV DC電源供應器
130‧‧‧第一電容器
132‧‧‧第一電感器
134‧‧‧電感器
136‧‧‧電容器

Claims (19)

  1. 一種用於處理一基板的設備，包括：一基座；一電極，該電極設置在該基座中；一導電桿，該導電桿耦接到該電極；及一射頻(RF)濾波器，該RF濾波器包含：一第一電容器，該第一電容器耦接到該導電桿且經配置為耦接到接地；一LC諧振電路，該LC諧振電路耦接到該導電桿，其中該LC諧振電路包含並聯耦接的一第三電容器與一電感器；及一第二電容器，該第二電容器耦接到該LC諧振電路且經配置為耦接到接地。
  2. 如請求項1所述之設備，進一步包括：一電源供應器，該電源供應器透過該LC諧振電路和該導電桿耦接到該電極。
  3. 如請求項2所述之設備，其中該電源供應器是一直流(DC)電源供應器，該直流(DC)電源供應器經配置為向該電極提供直流。
  4. 如請求項1所述之設備，其中該RF濾波器設置在一殼體中，該殼體經配置為耦接到接地。
  5. 如請求項4所述之設備，其中該第一電容器 和該第三電容器耦接到該殼體。
  6. 如請求項1所述之設備，其中該LC諧振電路和該第二電容器在該第一電容器的下游。
  7. 一種用於處理一基板之設備，包括：一基座；一電極，該電極設置在該基座中；一導電桿，該導電桿耦接到該電極；一RF濾波器，該RF濾波器耦接到該導電桿，該RF濾波器包含：一第一電容器，該第一電容器耦接到該導電桿；及一第一電感器，該第一電感器耦接到該導電桿；一饋通箱，該饋通箱具有設置在其中的以串聯耦接的一第二電感器和一第二電容器；及一電源供應器，該電源供應器透過該饋通箱和該RF濾波器耦接到該電極。
  8. 如請求項7所述之設備，其中該饋通箱經配置為耦接到接地。
  9. 如請求項7所述之設備，進一步包括：一殼體，該殼體圍繞該RF濾波器，其中該殼體經配置為耦接到接地，且其中該第一電容器耦接到該殼體。
  10. 如請求項7所述之設備，其中該基座包括一基板支撐件和一軸。
  11. 如請求項10所述之設備，其中該導電桿從該電極延伸穿過該軸。
  12. 如請求項7所述之設備，其中該電源供應器在該第二電容器和該第二電感器之間耦接。
  13. 如請求項7所述之設備，其中該第二電感器和該第二電容器設置在該饋通箱內，且其中該第二電容器經配置為耦接到接地。
  14. 一種用於處理一基板的設備，包括：一腔室主體，該腔室主體至少部分地在其中界定一處理空間；一基座，該基座設置在該處理空間中，該基座包含一基板支撐件與一軸，該軸耦接到該腔室主體以支撐該基板支撐件；一第一電極，該第一電極與該基座相對地設置在該處理空間中；一第二電極，該第二電極設置在該基座中；一導電桿，該導電桿延伸穿過該基座的該軸，該導電桿耦接到該第二電極；一RF濾波器，該RF濾波器設置在一殼體中且耦接到該導電桿，該RF濾波器包含： 一第一電容器，該第一電容器耦接到該導電桿且耦接到殼體；及一第一電感器，該第一電感器耦接到該導電桿；一饋通箱，該饋通箱包含以串聯耦接的一第二電感器和一第二電容器；一電纜，該電纜耦接到該第一電感器且耦接到該第二電感器；及一電源供應器，該電源供應器通過該饋通箱和該RF濾波器耦接到該第二電極，該電源供應器在該第二電感器和該第二電容器之間耦接。
  15. 如請求項14所述之設備，其中該第一電容器為RF功率創建來自該第二電極的一接地路徑。
  16. 如請求項14所述之設備，進一步包括：一RF源，該RF源耦接到該第一電極。
  17. 如請求項16所述之設備，其中從該RF源到該第一電極的RF功率具有13.56MHz的一頻率。
  18. 如請求項14所述之設備，其中該饋通箱耦接到接地。
  19. 如請求項18所述之設備，其中該第二電容器耦接到該饋通箱。
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