US20050205883A1 - Photonic crystal light emitting device - Google Patents

Photonic crystal light emitting device Download PDF

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US20050205883A1
US20050205883A1 US10/804,810 US80481004A US2005205883A1 US 20050205883 A1 US20050205883 A1 US 20050205883A1 US 80481004 A US80481004 A US 80481004A US 2005205883 A1 US2005205883 A1 US 2005205883A1
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type region
photonic crystal
region
crystal structure
lattice
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Jonathan Wierer
Michael Krames
John Epler
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Lumileds LLC
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Priority to US10/804,810 priority Critical patent/US20050205883A1/en
Assigned to LUMILEDS LIGHTING U.S., LLC reassignment LUMILEDS LIGHTING U.S., LLC ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). Assignors: EPLER, JOHN E., KRAMES, MICHAEL R., WIERER, JR., JONATHAN J.
Priority to EP05101807.5A priority patent/EP1577958B1/de
Priority to TW094107956A priority patent/TWI366281B/zh
Priority to JP2005118867A priority patent/JP2005317959A/ja
Publication of US20050205883A1 publication Critical patent/US20050205883A1/en
Priority to US11/373,636 priority patent/US7442965B2/en
Priority to US12/259,120 priority patent/US7675084B2/en
Assigned to PHILIPS LUMILEDS LIGHTING COMPANY LLC reassignment PHILIPS LUMILEDS LIGHTING COMPANY LLC CHANGE OF NAME (SEE DOCUMENT FOR DETAILS). Assignors: LUMILEDS LIGHTING U.S. LLC, LUMILEDS LIGHTING U.S., LLC, LUMILEDS LIGHTING, U.S. LLC, LUMILEDS LIGHTING, U.S., LLC
Assigned to LUMILEDS LLC reassignment LUMILEDS LLC CHANGE OF NAME (SEE DOCUMENT FOR DETAILS). Assignors: PHILIPS LUMILEDS LIGHTING COMPANY LLC
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H01L33/0093—Wafer bonding; Removal of the growth substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/10—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a light reflecting structure, e.g. semiconductor Bragg reflector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/20—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
    • H01L33/22—Roughened surfaces, e.g. at the interface between epitaxial layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
    • H01L2933/0083—Periodic patterns for optical field-shaping in or on the semiconductor body or semiconductor body package, e.g. photonic bandgap structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
    • H01L33/38—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
    • H01L33/382—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape the electrode extending partially in or entirely through the semiconductor body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls

Definitions

  • the present invention relates to semiconductor light emitting devices including photonic crystal structures.
  • LEDs Light emitting diodes
  • An LED includes a forward biased p-n junction. When driven by a current, electrons and holes are injected into the junction region, where they recombine and release their energy by emitting photons.
  • the quality of an LED can be characterized, for example, by its extraction efficiency, which measures the intensity of the emitted light for a given number of photons generated within the LED chip.
  • the extraction efficiency is limited, for example, by the emitted photons suffering multiple total internal reflections at the walls of the high refractive index semiconductor medium. As a result, the emitted photons do not escape into free space, leading to poor extraction efficiencies, typically less than 30%.
  • the extraction efficiency can be increased, for example, by enlarging the spatial angle in which the emitted photons can escape by developing suitable geometries, including cubic, cylindrical, pyramidal, and dome like shapes.
  • suitable geometries including cubic, cylindrical, pyramidal, and dome like shapes.
  • none of these geometries can entirely eliminate losses from total internal reflection.
  • a further source of loss is the reflection caused by the refractive index mismatch between the LED and the surrounding media. While such losses could be reduced with an anti-reflection coating, complete cancellation of reflection can be achieved only at a specific photon energy and one angle of incidence.
  • U.S. Pat. No. 5,955,749 entitled “Light Emitting Device Utilizing a Periodic Dielectric Structure,” granted to J. Joannopoulos et al., describes an approach to the problem of enhancing the extraction efficiency.
  • a photonic crystal is created by forming a lattice of holes completely through the semiconductor layers of the light emitting diode.
  • the lattice of holes creates a medium with a periodically modulated dielectric constant, affecting the way light propagates through the medium.
  • the photons of the light emitting diode can be characterized by their spectrum or dispersion relation, describing the relation between the energy and the wavelength of the photons.
  • the relationship may be plotted, yielding a photonic band diagram consisting of energy bands, or photonic bands, separated by band gaps.
  • the photonic band diagram is analogous to the spectrum of electrons in crystalline lattices as expressed in an electronic band diagram, the photonic band diagram is unrelated to the electronic band diagram.
  • U.S. Pat. No. 5,955,749 describes an n-doped layer, an active layer, a p-doped layer, and a lattice of holes formed in these layers.
  • the device of U.S. Pat. No. 5,955,749 is not operational and therefore is not a LED.
  • electrodes are not described, even though electrodes are needed for the successful operation of a photonic crystal LED (“PXLED”).
  • PXLED photonic crystal LED
  • the fabrication of electrodes in regular LEDs is known in the art, for PXLEDs neither the fabrication of electrodes, nor their influence on the operation of the PXLED is obvious.
  • suitably aligning the mask of the electrode layer with the lattice of holes may require new fabrication techniques.
  • electrodes are typically thought to reduce the extraction efficiency as they reflect a portion of the emitted photons back into the LED, and absorb another portion of the emitted light.
  • U.S. Pat. No. 5,955,749 proposes fabricating photonic crystal light emitting devices from GaAs.
  • GaAs is indeed a convenient and hence popular material for fabricating regular LEDs.
  • the surface recombination velocity expresses the rate of the recombination of electrons and holes on the surface of the diode. Electrons and holes are present in the junction region of the LED, originating from the n-doped layer and the p-doped layer, respectively.
  • a photonic crystal LED can be formed from Lee et al.'s light emitting design by including electrodes. The addition of the electrodes, however, will substantially affect the extraction and the spontaneous emission of the LED. Since this effect is unknown, it cannot be disregarded in the design of a LED. Since the Lee et al. design does not include such electrodes, the overall characteristics of an LED formed from that design are unclear. This questions the usefulness of the design of Lee et al.
  • a photonic crystal structure is formed in an n-type region of a III-nitride semiconductor structure including an active region sandwiched between an n-type region and a p-type region.
  • a reflector is formed on a surface of the p-type region opposite the active region.
  • the growth substrate on which the n-type region, active region, and p-type region are grown is removed, in order to facilitate forming the photonic crystal in an n-type region of the device, and to facilitate forming the reflector on a surface of the p-type region underlying the photonic crystal.
  • the photonic crystal and reflector form a resonant cavity, which may allow control of light emitted by the active region.
  • FIG. 1 is a cross sectional view of a photonic crystal light emitting diode.
  • FIG. 2 is a cross sectional view of an embodiment of a photonic crystal light emitting device lacking a growth substrate.
  • FIG. 3 is a plan view of the device of FIG. 2 .
  • FIG. 4 illustrates a method of fabricating the device of FIG. 2 .
  • FIG. 5 illustrates an epitaxial structure prior to bonding to a host substrate.
  • FIG. 6 illustrates a method of bonding an epitaxial structure to a host substrate.
  • FIG. 7 illustrates a method of removing a sapphire substrate from a III-nitride epitaxial structure.
  • FIG. 8 illustrates photoelectrochemical etching to thin the epitaxial layers after growth substrate removal.
  • FIGS. 9-12 illustrate a method of forming a photonic crystal structure.
  • FIG. 13 illustrates an alternative embodiment of the present invention.
  • FIGS. 14A-14D are cut away plan views of the device of FIG. 13 .
  • FIG. 15 is a plan view of a photonic crystal structure comprising a planar lattice of holes.
  • FIGS. 16A and 16B illustrate a method of forming a photonic crystal structure.
  • FIG. 1 illustrates a III-nitride photonic crystal LED (PXLED) 100 , described in more detail in application Ser. No. 10/059,588, “LED Efficiency Using Photonic Crystal Structure,” filed Jan. 28, 2002 and incorporated herein by reference.
  • PXLED III-nitride photonic crystal LED
  • an n-type region 108 is formed over host substrate 102 which may be, for example, sapphire, SiC, or GaN; an active region 112 is formed over n-type region 108 ; and a p-type region 116 is formed over active region 112 .
  • host substrate 102 which may be, for example, sapphire, SiC, or GaN
  • an active region 112 is formed over n-type region 108
  • a p-type region 116 is formed over active region 112 .
  • regions 108 , 112 , and 116 may be a single layer or multiple layers of the same or different composition, thickness, or dopant concentration.
  • a portion of p-type region 116 and active region 112 are etched away to expose a portion of n-type region 108 , then a p-contact 120 is formed on p-type region 116 and an n-contact 104 is formed on the exposed portion of n-type region 108 .
  • Active region 112 includes a junction region where electrons from n-type region 108 combine with holes of p-type region 116 and ideally emit energy in the form of photons.
  • Active layer 112 may include a quantum well structure to optimize the generation of photons. Many different quantum well structures have been described, for example, by G. B. Stringfellow and M. George Craford in “High Brightness Light Emitting Diodes,” published by the Associated Press in 1997.
  • the photonic crystal of PXLED 100 of FIG. 1 is created by forming a periodic structure of holes 122 - i in the LED.
  • the photonic crystal structure in the device of FIG. 1 may be formed by, for example, dry etching into the p-type region to form a periodic structure. Dry etching could be reactive ion, inductively coupled plasma, focused ion beam, sputter etching, electron cyclotron resonance, or chemically assisted ion beam etching.
  • Dry etching of p-type material is problematic because etching can damage the crystal, causing vacancies which create n-type donors.
  • p-type region 116 the presence of n-type donors lowers the concentration of holes and, in cases of severe damage to the crystal, can change the conductivity type of region 116 to n-type.
  • the inventors have discovered that the damage caused by dry etching is not limited to a localized area around the etched region, and may propagate vertically and laterally through the non-etched areas of the crystal, possibly eliminating the p-n junction and rendering the device electrically non-operational.
  • 5,955,749 also etch through p-type material, and therefore may suffer from the same widespread damage observed by the inventors.
  • portions of the active region are removed to form the photonic crystal structure, reducing the amount of active region material and potentially reducing the amount of light generated in the device.
  • etching through the quantum wells creates surface recombination, potentially lowering the efficiency of the device.
  • a photonic crystal is formed in an n-type layer of a III-nitride device attached to a host substrate and from which the growth substrate has been removed.
  • Such devices may emit light between about 280 and about 650 nm and usually emit light between about 420 and about 550 nm.
  • FIG. 2 is a cross sectional view of an embodiment of the invention.
  • FIG. 3 is a plan view of the device of FIG. 2 .
  • the photonic crystal 122 is formed in n-type region 108 , rather than p-type region 116 .
  • N-contact 10 is formed on a region of n-type region 108 that is not textured with the photonic crystal, though in other embodiments n-contact 10 may be formed on the photonic crystal area of n-type region 108 . Since the photonic crystal is formed in an n-type region, the n-type material is able to laterally inject current from contact 10 to photonic crystal 122 . Light is extracted from the device through photonic crystal 122 , thus the arrangement of n-contact 10 is selected to maximize the area of the photonic crystal. For example, as illustrated in FIG. 3 , n-contact 10 may surround photonic crystal region 122 - i .
  • N-contact 10 is not limited to a ring contact but could also be a grid or other structure that facilitates proper current spreading. To avoid light being absorbed by the n-contact 10 , implantation or a dielectric can be used on the epitaxial material under n-contact 10 , preventing current flow and light generation in that area.
  • a reflective p-contact 12 is formed on p-type region 116 . In contrast to the device illustrated in FIG. 1 , the device of FIG. 2 has the p- and n-contacts formed on opposite sides of the device.
  • P-contact 12 connects the epitaxial layers 20 to a host substrate 16 either directly or via optional bonding layers 14 .
  • An optional contact 18 may be formed on the surface of host substrate 16 opposite the device layers 20 .
  • FIGS. 13 and 14 A- 14 D illustrate an alternative embodiment of the present invention.
  • FIGS. 14A, 14B , 14 C, and 14 D are cut away plan views along axes 90 , 91 , 92 , and 93 , respectively, illustrated in the cross sectional view of FIG. 13 .
  • both p and n-contacts 12 and 10 are on the host substrate side of the device, eliminating absorption of light by a top side n-contact, as in the device of FIGS. 2 and 3 .
  • One or more vias are etched down to n-type region 108 through p-type region 116 and active region 112 to make n-contact 10 .
  • Host substrate structure 49 is fabricated in a layered structure to electrically isolate the p- and n-contacts.
  • An example of the layer structure is illustrated by FIGS. 14A-14D , which show plan view slices of the host substrate along axes 90 , 91 , 92 , and 93 of FIG. 13 .
  • N-metal 301 and p-metal 303 are routed such that at the bottom of the host substrate the positive and negative contacts are separate and can be easily soldered to another structure.
  • N-metal 301 and p-metal 303 may be electrically isolated by dielectric 305 .
  • the photonic crystal structure of the device to be formed in an n-type region.
  • Etching the photonic crystal structure in an n-type region rather than a p-type region avoids the type-conversion problem associated with p-type III-nitrides, described above. Also, vacancies introduced in the n-type region from etching do not affect the conductivity of the material.
  • the photonic structure in n-type region 108 is separated from p-type region 116 and active region 112 , damage to these regions caused by etching the photonic structure is avoided.
  • the exposed top n-type layer allows for formation of the photonic crystal proximal to the active region. In alternative embodiments where surface recombination is low the photonic crystal may penetrate the active region and p-type region.
  • a device with an exposed top n-type region may be formed by growing the p-type region first on a growth substrate, followed by an active region and n-type region. Ignoring the growth difficulties, this would present n-type layer on the surface just as in FIG. 2 , such that etching damage is not a concern.
  • Contacts to the p-GaN layers would have to be formed on the surface by first exposing the p-type layers by etching a mesa. Therefore current would have to spread laterally along resistive p-type layers, creating a device with high operating voltage, a result that is undesirable in many applications.
  • the substrate could be removed from this structure so that the operating voltage is not high. This is done by first bonding a host to the top n-type layers and then removing the growth substrate. Next etching is performed to remove the initial growth layers and expose the p-type region. Then a second bonding step with a second host is performed on the now-exposed p-type layers. The first host is removed re-exposing the n-type region for photonic crystal formation. The resulting structure is the same as FIG. 2 .
  • the photonic crystal structure can include a periodic variation of the thickness of n-type region 108 , with alternating maxima and minima.
  • An example is a grating (one-dimensional lattice) or planar lattice of holes 122 (two-dimensional lattice).
  • the lattice is characterized by the diameter of the holes, d, the lattice constant a, which measures the distance between the centers of nearest neighbor holes, the depth of the holes w, and the dielectric constant of the dielectric, disposed in the holes, ⁇ h .
  • Parameters a, d, w, and ⁇ h influence the density of states of the bands, and in particular, the density of states at the band edges of the photonic crystal's spectrum.
  • Parameters a, d, w, and ⁇ h thus influence the radiation pattern emitted by the device, and can be selected to enhance the extraction efficiency from the device.
  • the radiation pattern of the emitted light can be narrowed, increasing the radiance of the LED. This is useful in applications where light at only specific angles is useful.
  • the photonic crystal parameters are chosen such that greater than 50% of radiation exiting the device is emitted in an exit cone defined by an angle of 45 degrees to an axis normal to a surface of the device.
  • Holes 122 - i can be arranged to form triangular, square, hexagonal, honeycomb, or other well-known two-dimensional lattice types. In some embodiments, different lattice types are formed in different regions of the device. Holes 122 - i can have circular, square, hexagonal, or other cross sections. In some embodiments, the lattice spacing a is between about 0.1 ⁇ and about 10 ⁇ , preferably between about 0.1 ⁇ and about 4 ⁇ , where ⁇ is the wavelength in the device of light emitted by the active region. In some embodiments, holes 122 may have a diameter d between about 0.1 a and about 0.5 a, where a is the lattice constant. Holes 122 - i can be filled with air or with an optional dielectric 11 ( FIG. 2 ) of dielectric constant ⁇ h , often between about 1 and about 16. Possible dielectrics include silicon oxides.
  • Photonic crystal 122 and the reflection of the photonic crystal from reflective p-contact 12 form a GaN resonant cavity.
  • the resonant cavity offers superior control of the light.
  • the GaN cavity is thinned the optical mode volume is reduced. Fewer waveguided modes can be trapped in the cavity increasing the chances for the light to exit the device. This can be explained in the following discussion.
  • the photonic crystal can affect the waveguided modes by scattering them out of the crystal. As the number of waveguided modes is reduced the more efficient the light extraction of the LED. For example if the epitaxial layers are thin enough to support only one waveguided mode (m), then initially 50% of the light would exit the GaN (L out ) and 50% would be waveguided in the epitaxial layers (L in ).
  • the thickness of the cavity i.e. the thickness of epitaxial layers 20
  • the thickness of epitaxial layers 20 is selected such that the epitaxial layers are as thin as possible to reduce the number of waveguided modes, but thick enough to efficiently spread current.
  • the thickness of epitaxial layers 20 is less than about 1 ⁇ m, and preferably less than about 0.5 ⁇ m.
  • the thickness of epitaxial layers 20 is between about ⁇ and about 5 ⁇ , between about 0.18 ⁇ m and about 0.94 ⁇ m for a device that emits 450 nm light.
  • Holes 122 have a depth between about 0.05 ⁇ and the entire thickness of n-type region 108 . Generally, holes 122 are formed entirely within n-type region 08 and do not penetrate into the active region. N-type region 108 usually has a thickness of about 0.1 microns or more. The depth of holes 122 is selected to place the bottoms of holes 122 as close to the active region as possible without penetrating the active region. In alternative embodiments the photonic crystal penetrates the active layers and p-type layers.
  • the radiation pattern emitted from the device can be tuned by changing the lattice type, distance between the active region and the photonic crystal, lattice parameter a, diameter d, depth w, and epitaxial thickness ( 20 ).
  • the lattice parameter a and diameter d are illustrated in FIG. 15 .
  • the radiation pattern may be adjusted to emit light preferentially in a chosen direction.
  • the periodic structure is a variation of the thickness of one or more selected semiconductor layers.
  • the periodic structure can include variations of the thickness along one direction within the plane of the semiconductor layers, but extending along a second direction without variation, in essence forming a set of parallel grooves.
  • Two-dimensional periodic variations of the thickness include various lattices of indentations.
  • the device illustrated in FIGS. 2 and 3 may be fabricated by the method illustrated in FIG. 4 .
  • stage 31 epitaxial layers 20 of FIG. 2 are grown on a conventional growth substrate.
  • the epitaxial layers are then attached to a host substrate in stage 33 , such that the growth substrate can be removed in stage 35 .
  • the epitaxial layers may be thinned in optional stage 37 , then a photonic crystal structure is formed on the exposed surface of the epitaxial layers in stage 39 .
  • FIG. 5 illustrates stage 31 of FIG. 4 in more detail.
  • Epitaxial layers 20 of the device of FIG. 2 are grown on a substrate 40 such as sapphire, SiC, or GaN.
  • Optional preparation layers 41 which may include, for example, buffer layers or nucleation layers, may be grown first on substrate 40 to provide a suitable growth substrate.
  • One or more optional etch stop layers 42 may then be grown. Etch stop layers 42 may facilitate release of the growth substrate or facilitate thinning of the epitaxial layers, as described below.
  • the epitaxial layers 20 are grown over etch stop layers 42 and include n-type region 108 , active region 112 , and p-type region 116 .
  • the n-type region is grown first, followed by the active region and the p-type region.
  • a p-contact 12 is formed on the surface of p-type region 116 .
  • P-contact 12 may be a single layer or may include multiple layers such as an ohmic contact layer, a reflective layer, and a guard metal layer.
  • the reflective layer is usually silver or aluminum.
  • the guard metal may include, for example, nickel, titanium, or tungsten. The guard metal may be chosen to prevent the reflective metal layer from migrating, particularly in the case of a silver reflective layer, and to provide an adhesion layer for a bonding layer 14 A, used to bond the epitaxial structure to a host substrate.
  • FIG. 6 illustrates stage 33 of FIG. 4 , attaching the epitaxial layers to a host substrate, in more detail.
  • Bonding layers 14 A and 14 B typically metal, serve as compliant materials for thermo-compression or eutectic bonding between the epitaxial structure and the host substrate. Examples of suitable bonding layer metals include gold and silver.
  • Host substrate 16 provides mechanical support to the epitaxial layers after the growth substrate is removed, and provides electrical contact to p-contact 12 .
  • Host substrate 16 is selected to be electrically conductive (i.e. less than about 0.1 ⁇ cm), to be thermally conductive, to have a coefficient of thermal expansion (CTE) matched to that of the epitaxial layers, and to be flat (i.e.
  • CTE coefficient of thermal expansion
  • Suitable materials include, for example, metals such as Cu, Mo, Cu/Mo, and Cu/W; semiconductors with metal contacts (layers 46 and 18 of FIG. 6 ), such as Si with ohmic contacts and GaAs with ohmic contacts including, for example, one or more of Pd, Ge, Ti, Au, Ni, Ag; and ceramics such as compressed diamond.
  • CTE Thermal conductivity Material (10 ⁇ 6 /K) (W/m ⁇ K) Electrical resistance ( ⁇ cm) GaN 2.4 130 0.01 Al 2 O 3 6.8 40 Very high Si 2.7 150 0.01 plus contact resistance GaAs 6.0 59 0.01 plus contact resistance Mo 4.8 140 5 ⁇ 10 ⁇ 6
  • Host substrate structure 49 and epitaxial structure 48 are pressed together at elevated temperature and pressure to form a durable metal bond between bonding layers 14 A and 14 B.
  • bonding is done on a wafer scale, before a wafer with an epitaxial structure is diced into individual devices.
  • the temperature and pressure ranges for bonding are limited on the lower end by the strength of the resulting bond, and on the higher end by the stability of the host substrate structure and the epitaxial structure.
  • high temperatures and/or high pressures can cause decomposition of the epitaxial layers in structure 48 , delamination of p-contact 12 , failure of diffusion barriers, for example in p-contact 12 , or outgassing of the component materials in the epitaxial layers.
  • a suitable temperature range is, for example, about 200° C. to about 500° C.
  • a suitable pressure range is, for example, about 100 psi to about 300 psi.
  • FIG. 7 illustrates a method of removing a sapphire growth substrate, stage 35 in FIG. 4 .
  • Portions of the interface between sapphire substrate 40 and the III-nitride layers 45 are exposed, through the sapphire substrate, to a high fluence pulsed ultraviolet laser 70 in a step and repeat pattern.
  • the photon energy of the laser is above the band gap of the III-nitride layer adjacent to the sapphire (GaN in some embodiments), thus the pulse energy is effectively converted to thermal energy within the first 100 nm of epitaxial material adjacent to the sapphire.
  • sufficiently high fluence i.e. greater than about 1.5 J/cm 2
  • a photon energy above the band gap of GaN and below the absorption edge of sapphire i.e.
  • the resulting structure includes epitaxial layers 45 bonded to host substrate structure 49 .
  • Exposure to the laser pulse results in large temperature gradients and mechanical shock waves traveling outward from the exposed region, resulting in thermal and mechanical stress within the epitaxial material sufficient to cause cracking of the epitaxial material and failure of wafer bond 14 , which limits the yield of the substrate removal process.
  • the damage caused by thermal and mechanical stresses may be reduced by patterning the epitaxial structure down to the sapphire substrate or down to a suitable depth of the epitaxial structure, to form trenches between individual devices on the wafer.
  • the trenches are formed by conventional masking and dry etching techniques, before the wafer is bonded to the host substrate structure.
  • the laser exposure region is then matched to the pattern of trenches on the wafer.
  • the trench isolates the impact of the laser pulse to the semiconductor region being exposed.
  • a suitable growth substrate may include a thin layer of SiC grown or processed on to a thick layer of Si or SiO x .
  • the Si base layer and/or oxide layer may be easily removed by conventional silicon processing techniques.
  • the remaining SiC layer may be thin enough to be removed entirely by known etching techniques.
  • N-contact 10 may then be formed on the exposed surface of the epitaxial layers. Alternatively, N-contact 10 may be formed in the holes in the SiC layer.
  • the remaining epitaxial layers may optionally be thinned to form a cavity between the photonic crystal and p-contact 12 of optimal depth and of uniform thickness, usually with thickness variations less than about 20 nm.
  • the epitaxial layers may be thinned by, for example, chemical mechanical polishing, conventional dry etching, or photoelectrochemical etching (PEC). PEC is illustrated in FIG. 8 .
  • the host substrate and epitaxial layers (structure 53 ) are immersed in a basic solution 50 .
  • a suitable basic solution is 0.1 M KOH, though many other suitable basic solutions may be used and typically depend on the composition of the material to be etched.
  • the epitaxial surface of structure 53 often an n-type GaN layer, is exposed to light with energy greater than the band gap of the surface layer.
  • ultraviolet light with a wavelength of about 365 nm and an intensity between about 10 and about 100 mW/cm 2 is used. Exposure to the light generates electron-hole pairs in the surface semiconductor layer. The holes migrate to the surface of the epitaxial layers under the influence of the electric field in the n-type semiconductor.
  • An external electric potential may be applied across electrodes 51 and 52 to accelerate and control the etching process.
  • an etch stop layer is incorporated into the epitaxial layers, as described above in FIG. 4 .
  • the etch stop layer may have a band gap greater than the layer to be etched.
  • the etched layer may be GaN
  • the etch stop layer may be AlGaN.
  • the light sources used to expose structure 53 is selected to have an energy greater than the band gap of the layer to be etched, but less than the band gap of the etch stop layer. Accordingly, exposure to the light does not generate electron-hole pairs in the etch stop layer, effectively halting the etch once the etch stop layer is reached.
  • InGaN may be used as the etch stop layer.
  • Indium oxide, formed as the InGaN decomposes, is insoluble in the etchant solution and coats the surface of the etched layer, terminating the etch.
  • n-type region 108 may be patterned such that the portion under contact 10 is thicker than the portion forming the photonic crystal, in order to minimize the thickness of the cavity, while providing enough n-type material under contact 10 for adequate current spreading, optimal contact resistance, and mechanical strength.
  • FIGS. 9-12 illustrate a method of fabricating the photonic crystal structure of the device of FIG. 2 .
  • One or more resist, metal, or dielectric layers 202 are formed over the top surface of the epitaxial layers, as illustrated in FIG. 9 .
  • Resist layers 202 are patterned to form a lattice of openings in FIG. 10 , using a high resolution lithography technique such as electron beam lithography, nano-imprint lithography, deep X-ray lithography, interferometric lithography, hot embossing, or microcontact printing.
  • a high resolution lithography technique such as electron beam lithography, nano-imprint lithography, deep X-ray lithography, interferometric lithography, hot embossing, or microcontact printing.
  • epitaxial layers 200 are etched using known etching techniques.
  • Damage caused by dry etching can be mitigated by a subsequent short wet chemical etch, anneal, a combination thereof, or other surface passivation techniques.
  • the remaining resist layer 202 is then removed in FIG. 12 .
  • Other techniques for forming a photonic crystal such as epitaxial lateral overgrowth, are described in more detail in application Ser. No. 10/059,588, “LED Efficiency Using Photonic Crystal Structure.” As illustrated in FIG. 2 , a portion of the surface of the exposed n-type layer may not be textured with a photonic crystal, such that n-contact 10 may be formed on a planar layer. After the photonic crystal is formed, n-contact 10 is deposited by conventional techniques.
  • FIGS. 16A and 16B illustrate an alternative method for forming the photonic crystal. Rather than etching the photonic crystal after removing the growth substrate, a buried photonic crystal is formed during epitaxial growth.
  • epitaxial growth is stopped before the active layers are grown.
  • a photonic crystal is then formed in n-type region 108 , for example, by etching as illustrated above in FIGS. 9-12 .
  • the material is then placed back into the growth reactor and first a smoothing n-type layer 310 , often GaN, is grown.
  • the depth of the photonic crystal holes is greater than the diameter of the holes.
  • the growth parameters of smoothing layer 310 are chosen so lateral growth is faster than vertical growth, ensuring that the photonic crystal holes are not filled.

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US10/804,810 US20050205883A1 (en) 2004-03-19 2004-03-19 Photonic crystal light emitting device
EP05101807.5A EP1577958B1 (de) 2004-03-19 2005-03-09 Licht emittierendes Bauelement mit photonischem Kristall
TW094107956A TWI366281B (en) 2004-03-19 2005-03-16 Light emitting device and method of forming a semiconductor light emitting device
JP2005118867A JP2005317959A (ja) 2004-03-19 2005-03-18 光結晶発光装置
US11/373,636 US7442965B2 (en) 2004-03-19 2006-03-09 Photonic crystal light emitting device
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Cited By (50)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20040207323A1 (en) * 2003-04-15 2004-10-21 Erchak Alexei A. Light emitting devices
US20040207320A1 (en) * 2003-04-15 2004-10-21 Erchak Alexei A. Light emitting devices
US20040207310A1 (en) * 2003-04-15 2004-10-21 Erchak Alexei A. Light emitting devices
US20040207319A1 (en) * 2003-04-15 2004-10-21 Erchak Alexei A. Light emitting devices
US20040259279A1 (en) * 2003-04-15 2004-12-23 Erchak Alexei A. Light emitting device methods
US20040259285A1 (en) * 2003-04-15 2004-12-23 Erchak Alexei A. Light emitting device methods
US20050040424A1 (en) * 2003-04-15 2005-02-24 Erchak Alexei A. Light emitting diode systems
US20050040419A1 (en) * 2003-04-15 2005-02-24 Luminus Devices, Inc., A Delaware Corporation Light emitting devices
US20050051785A1 (en) * 2003-04-15 2005-03-10 Erchak Alexei A. Electronic device contact structures
US20050059179A1 (en) * 2003-09-17 2005-03-17 Erchak Alexei A. Light emitting device processes
US20050059178A1 (en) * 2003-09-17 2005-03-17 Erchak Alexei A. Light emitting device processes
US20050087757A1 (en) * 2003-04-15 2005-04-28 Luminus Devices, Inc., A Delaware Corporation Light emitting devices
US20060038188A1 (en) * 2004-08-20 2006-02-23 Erchak Alexei A Light emitting diode systems
US20060043400A1 (en) * 2004-08-31 2006-03-02 Erchak Alexei A Polarized light emitting device
US20060043391A1 (en) * 2003-04-15 2006-03-02 Erchak Alexei A Light emitting devices for liquid crystal displays
US20060076565A1 (en) * 2004-09-29 2006-04-13 Hitoshi Murofushi Semiconductor light emitting element and fabrication method thereof
US7083993B2 (en) 2003-04-15 2006-08-01 Luminus Devices, Inc. Methods of making multi-layer light emitting devices
US20060204865A1 (en) * 2005-03-08 2006-09-14 Luminus Devices, Inc. Patterned light-emitting devices
US20070045640A1 (en) * 2005-08-23 2007-03-01 Erchak Alexei A Light emitting devices for liquid crystal displays
US20070081336A1 (en) * 2005-10-11 2007-04-12 Bierhuizen Serge J Illumination system with optical concentrator and wavelength converting element
US20070085100A1 (en) * 2005-10-14 2007-04-19 The Regents Of The University Of California Photonic structures for efficient light extraction and conversion in multi-color light emitting devices
US20070085098A1 (en) * 2005-10-17 2007-04-19 Luminus Devices, Inc. Patterned devices and related methods
US20070087459A1 (en) * 2005-10-17 2007-04-19 Luminus Devices, Inc. Patchwork patterned devices and related methods
US20070085083A1 (en) * 2005-10-17 2007-04-19 Luminus Devices, Inc. Anisotropic collimation devices and related methods
WO2007055468A1 (en) * 2005-11-10 2007-05-18 Seoul Opto Device Co., Ltd. Ac light emitting device having photonic crystal structure and method of fabricating the same
US20070115556A1 (en) * 2003-12-12 2007-05-24 Luminus Devices, Inc. Optical display systems and methods
US20070181889A1 (en) * 2006-02-08 2007-08-09 Kenji Orita Semiconductor light emitting device and method for manufacturing the same
US20070224831A1 (en) * 2006-03-23 2007-09-27 Lg Electronics Inc. Post structure, semiconductor device and light emitting device using the structure, and method for forming the same
DE102006017573A1 (de) * 2006-04-13 2007-10-18 Osram Opto Semiconductors Gmbh Optoelektronischer Halbleiterkörper und Verfahren zu dessen Herstellung
US20070267646A1 (en) * 2004-06-03 2007-11-22 Philips Lumileds Lighting Company, Llc Light Emitting Device Including a Photonic Crystal and a Luminescent Ceramic
KR100794121B1 (ko) 2006-04-10 2008-01-10 광주과학기술원 발광 다이오드
US7391059B2 (en) 2005-10-17 2008-06-24 Luminus Devices, Inc. Isotropic collimation devices and related methods
US20080277681A1 (en) * 2007-05-09 2008-11-13 Tsinghua University Light emitting diode
DE102008024327A1 (de) * 2008-05-20 2009-11-26 Osram Opto Semiconductors Gmbh Optoelektronischer Halbleiterchip mit einer reflektierenden Schicht
US20100224854A1 (en) * 2009-03-03 2010-09-09 Jin Wook Lee Light emitting device
US20100264454A1 (en) * 2006-12-22 2010-10-21 Koninklijke Philips Electronics N.V. Semiconductor light emitting device growing active layer on textured surface
WO2011065766A2 (en) * 2009-11-27 2011-06-03 Seoul Opto Device Co., Ltd. Vertical gallium nitride-based light emttting diode and method of manufacturing the same
US20110177638A1 (en) * 2010-01-15 2011-07-21 Koninklijke Philips Electronics N.V. Semiconductor light emitting device with curvature control layer
KR101088476B1 (ko) 2009-10-16 2011-11-30 광주과학기술원 발광 다이오드 및 이의 제조방법
US8110838B2 (en) 2006-12-08 2012-02-07 Luminus Devices, Inc. Spatial localization of light-generating portions in LEDs
US8110425B2 (en) 2007-03-20 2012-02-07 Luminus Devices, Inc. Laser liftoff structure and related methods
US20120050694A1 (en) * 2010-08-27 2012-03-01 Industrial Technology Research Institute Light emitting unit array and projection system
WO2012030360A1 (en) * 2010-08-30 2012-03-08 Invenlux Corporation Light-emitting devices with two-dimensional composition-fluctuation active-region and method for fabricating the same
US20120070922A1 (en) * 2010-09-16 2012-03-22 National Taiwan University Method for forming light emitting device
US9359260B2 (en) 2004-06-03 2016-06-07 Lumileds Llc Luminescent ceramic for a light emitting device
US9595616B1 (en) * 2015-12-02 2017-03-14 Sandia Corporation Vertical III-nitride thin-film power diode
US9620680B2 (en) 2008-10-09 2017-04-11 Osram Opto Semiconductors Gmbh Optoelectronic semiconductor body
CN108363249A (zh) * 2018-03-14 2018-08-03 京东方科技集团股份有限公司 一种显示面板、其驱动方法及显示装置
CN109119519A (zh) * 2018-09-29 2019-01-01 华南理工大学 欧姆接触性能优化的光子晶体led芯片及其制备方法
US11251272B2 (en) * 2005-05-17 2022-02-15 Taiwan Semiconductor Manufacturing Company, Ltd. Lattice-mismatched semiconductor structures with reduced dislocation defect densities and related methods for device fabrication

Families Citing this family (58)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7012279B2 (en) * 2003-10-21 2006-03-14 Lumileds Lighting U.S., Llc Photonic crystal light emitting device
US20060067605A1 (en) * 2004-09-30 2006-03-30 Laura Wills Mirkarimi Photonic crystal optical temperature measuring system
EP1862035B1 (de) 2005-03-14 2013-05-15 Koninklijke Philips Electronics N.V. In eine polykristalline keramische struktur eingebetteter phosphor und ein lichtemittierendes element enthaltend diesen phosphor
KR20070063731A (ko) * 2005-12-15 2007-06-20 엘지전자 주식회사 나노 패턴이 형성된 기판의 제조방법 및 그 기판을 이용한발광소자
US7687811B2 (en) * 2006-03-21 2010-03-30 Lg Electronics Inc. Vertical light emitting device having a photonic crystal structure
JP2007273746A (ja) * 2006-03-31 2007-10-18 Sumitomo Chemical Co Ltd 固体表面の微細加工方法および発光素子
US7955531B1 (en) 2006-04-26 2011-06-07 Rohm And Haas Electronic Materials Llc Patterned light extraction sheet and method of making same
US7521727B2 (en) 2006-04-26 2009-04-21 Rohm And Haas Company Light emitting device having improved light extraction efficiency and method of making same
DE102006033502A1 (de) 2006-05-03 2007-11-15 Osram Opto Semiconductors Gmbh Strahlungsemittierender Halbleiterkörper mit Trägersubstrat und Verfahren zur Herstellung eines solchen
KR100736623B1 (ko) * 2006-05-08 2007-07-09 엘지전자 주식회사 수직형 발광 소자 및 그 제조방법
EP1887634A3 (de) 2006-08-11 2011-09-07 OSRAM Opto Semiconductors GmbH Strahlungsemittierendes Halbleiterbauelement
DE102006046037B4 (de) * 2006-09-28 2024-05-29 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung LED-Halbleiterkörper und Verwendung eines LED-Halbleiterkörpers
DE102007004302A1 (de) * 2006-09-29 2008-04-03 Osram Opto Semiconductors Gmbh Halbleiterchip und Verfahren zur Herstellung eines Halbleiterchips
US7697588B2 (en) * 2006-11-02 2010-04-13 Canon Kabushiki Kaisha Structure having photonic crystal and surface-emitting laser using the same
KR100826395B1 (ko) 2006-12-18 2008-05-02 삼성전기주식회사 수직구조 질화물 반도체 발광소자 제조방법
DE102007022947B4 (de) 2007-04-26 2022-05-05 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Optoelektronischer Halbleiterkörper und Verfahren zur Herstellung eines solchen
TWI394293B (zh) * 2007-05-18 2013-04-21 Hon Hai Prec Ind Co Ltd 發光二極體
JP2009049044A (ja) * 2007-08-13 2009-03-05 Sumitomo Electric Ind Ltd 半導体レーザを作製する方法
TW200926440A (en) * 2007-12-12 2009-06-16 Advanced Optoelectronic Tech Light emitting diode and manufacturing method thereof
US7985979B2 (en) 2007-12-19 2011-07-26 Koninklijke Philips Electronics, N.V. Semiconductor light emitting device with light extraction structures
KR101426288B1 (ko) * 2007-12-27 2014-08-06 엘지디스플레이 주식회사 발광 다이오드 및 그 제조방법
DE102008022942A1 (de) 2008-05-09 2009-11-12 Osram Opto Semiconductors Gmbh Strahlungsemittierender Halbleiterchip
DE102008030584A1 (de) * 2008-06-27 2009-12-31 Osram Opto Semiconductors Gmbh Verfahren zur Herstellung eines optoelektronischen Bauelementes und optoelektronisches Bauelement
TWI470823B (zh) 2009-02-11 2015-01-21 Epistar Corp 發光元件及其製造方法
KR100969160B1 (ko) * 2009-03-10 2010-07-21 엘지이노텍 주식회사 발광소자 및 그 제조방법
JP5597933B2 (ja) * 2009-05-01 2014-10-01 住友電気工業株式会社 Ｉｉｉ族窒化物半導体層貼り合わせ基板およびその製造方法
US8400064B2 (en) * 2009-09-09 2013-03-19 Koninklijke Philips Electronics N.V. Zener diode protection network in submount for LEDs connected in series
JP5132647B2 (ja) * 2009-09-24 2013-01-30 株式会社東芝 パターン形成方法
JP5534763B2 (ja) * 2009-09-25 2014-07-02 株式会社東芝 半導体発光装置の製造方法及び半導体発光装置
KR101038923B1 (ko) * 2010-02-02 2011-06-03 전북대학교산학협력단 개선된 발광 효율을 갖는 발광 다이오드 및 이의 제조방법
TWI470832B (zh) * 2010-03-08 2015-01-21 Lg Innotek Co Ltd 發光裝置
KR101047720B1 (ko) * 2010-04-23 2011-07-08 엘지이노텍 주식회사 발광 소자, 발광 소자 제조방법 및 발광 소자 패키지
US8154052B2 (en) 2010-05-06 2012-04-10 Koninklijke Philips Electronics N.V. Light emitting device grown on wavelength converting substrate
US8536022B2 (en) 2010-05-19 2013-09-17 Koninklijke Philips N.V. Method of growing composite substrate using a relaxed strained layer
US8692261B2 (en) 2010-05-19 2014-04-08 Koninklijke Philips N.V. Light emitting device grown on a relaxed layer
AU2011268135B2 (en) 2010-06-18 2014-06-12 Glo Ab Nanowire LED structure and method for manufacturing the same
DE102010046792A1 (de) 2010-09-28 2012-03-29 Osram Opto Semiconductors Gmbh Optoelektronischer Halbleiterchip und Verfahren zu dessen Herstellung
DE102010048617A1 (de) * 2010-10-15 2012-04-19 Osram Opto Semiconductors Gmbh Verfahren zur Herstellung einer Halbleiterschichtenfolge, strahlungsemittierender Halbleiterchip und optoelektronisches Bauteil
JP2014501031A (ja) * 2010-10-22 2014-01-16 カリフォルニア インスティチュート オブ テクノロジー 低熱伝導率および熱電性エネルギー転換材料のためのナノメッシュのフォノン性構造
KR20120092326A (ko) * 2011-02-11 2012-08-21 서울옵토디바이스주식회사 광 결정 구조를 갖는 비극성 발광 다이오드 및 그것을 제조하는 방법
TWI543386B (zh) 2011-03-28 2016-07-21 財團法人工業技術研究院 圓形光子晶體結構、發光二極體元件以及光電轉換元件
US8409892B2 (en) * 2011-04-14 2013-04-02 Opto Tech Corporation Method of selective photo-enhanced wet oxidation for nitride layer regrowth on substrates
JP5117596B2 (ja) * 2011-05-16 2013-01-16 株式会社東芝 半導体発光素子、ウェーハ、および窒化物半導体結晶層の製造方法
US20130019918A1 (en) 2011-07-18 2013-01-24 The Regents Of The University Of Michigan Thermoelectric devices, systems and methods
US8350251B1 (en) 2011-09-26 2013-01-08 Glo Ab Nanowire sized opto-electronic structure and method for manufacturing the same
US9595653B2 (en) 2011-10-20 2017-03-14 California Institute Of Technology Phononic structures and related devices and methods
US9966216B2 (en) 2011-11-04 2018-05-08 Princeton University Photo-electron source assembly with scaled nanostructures and nanoscale metallic photonic resonant cavity, and method of making same
WO2013109729A1 (en) 2012-01-17 2013-07-25 Silicium Energy, Inc. Systems and methods for forming thermoelectric devices
WO2014028903A1 (en) 2012-08-17 2014-02-20 Silicium Energy, Inc. Systems and methods for forming thermoelectric devices
WO2014070795A1 (en) 2012-10-31 2014-05-08 Silicium Energy, Inc. Methods for forming thermoelectric elements
US9263662B2 (en) 2014-03-25 2016-02-16 Silicium Energy, Inc. Method for forming thermoelectric element using electrolytic etching
DE102015109761B4 (de) * 2015-06-18 2022-01-27 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Verfahren zur Herstellung eines Nitrid-Halbleiterbauelements und Nitrid-Halbleiterbauelement
TW201809931A (zh) 2016-05-03 2018-03-16 麥崔克斯工業股份有限公司 熱電裝置及系統
USD819627S1 (en) 2016-11-11 2018-06-05 Matrix Industries, Inc. Thermoelectric smartwatch
DE102018123930A1 (de) * 2018-09-27 2020-04-02 Osram Opto Semiconductors Gmbh Optoelektronischer Halbleiterchip mit erstem und zweitem Kontaktelement und Verfahren zur Herstellung des optoelektronischen Halbleiterchips
JP2021097184A (ja) * 2019-12-19 2021-06-24 株式会社沖データ 発光サイリスタ、光プリントヘッド、及び画像形成装置
DE102021107019A1 (de) * 2021-03-22 2022-09-22 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Verfahren zur herstellung einer halbleiterschichtenfolge und halbleiterschichtenfolge
CN118160068A (zh) * 2021-10-29 2024-06-07 加利福尼亚大学董事会 含有外延光控制特征的发光二极管

Citations (31)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11431A (en) * 1854-08-01 peters
US16895A (en) * 1857-03-24 Improved method of regulating the velocity of wind-wheels
US40424A (en) * 1863-10-27 Improvement in plaiting-machines
US51787A (en) * 1866-01-02 Improvement in latch-fastenings
US51785A (en) * 1866-01-02 Improved sealing-ring for preserve-jars
US87757A (en) * 1869-03-16 nelson chapman
US87754A (en) * 1869-03-16 Improvement in implements
US89899A (en) * 1869-05-11 Improvement in hat-spreaders
US109644A (en) * 1870-11-29 Improvement in vehicles
US127375A (en) * 1872-05-28 Improvement in processes and apparatus for removing tin from tin scrap
US130311A (en) * 1872-08-06 Improvement in refrigerator-buildings
US145877A (en) * 1873-12-23 Improvement in windmills
US207323A (en) * 1878-08-20 Improvement in grain-elevators
US207320A (en) * 1878-08-20 John h
US213307A (en) * 1879-03-18 Improvement in gun-stocks
US5371025A (en) * 1991-09-06 1994-12-06 Gold Star, Ltd. Method of making thin film transistors
US6071795A (en) * 1998-01-23 2000-06-06 The Regents Of The University Of California Separation of thin films from transparent substrates by selective optical processing
US6091085A (en) * 1998-02-19 2000-07-18 Agilent Technologies, Inc. GaN LEDs with improved output coupling efficiency
US20020004307A1 (en) * 2000-07-05 2002-01-10 Nec Corporation Photonic crystal multilayer substrate and manufacturing method thereof
US20020079497A1 (en) * 2000-09-18 2002-06-27 Anand Gopinath Vertical cavity surface emitting laser with single mode confinement
US6534798B1 (en) * 1999-09-08 2003-03-18 California Institute Of Technology Surface plasmon enhanced light emitting diode and method of operation for the same
US6559075B1 (en) * 1996-10-01 2003-05-06 Siemens Aktiengesellschaft Method of separating two layers of material from one another and electronic components produced using this process
US20030141507A1 (en) * 2002-01-28 2003-07-31 Krames Michael R. LED efficiency using photonic crystal structure
US20030222263A1 (en) * 2002-06-04 2003-12-04 Kopin Corporation High-efficiency light-emitting diodes
US20030235229A1 (en) * 2002-06-19 2003-12-25 Hongyu Deng Vertical cavity surface emitting laser using photonic crystals
US20040135155A1 (en) * 2002-02-08 2004-07-15 Matsushita Electric Industrial Co., Ltd. Semiconductor light emitting device and method of fabricating the same
US6770353B1 (en) * 2003-01-13 2004-08-03 Hewlett-Packard Development Company, L.P. Co-deposited films with nano-columnar structures and formation process
US20040165850A1 (en) * 2003-02-10 2004-08-26 Kyoto University Two-dimensional photonic crystal cavity and channel add/drop filter
US6831302B2 (en) * 2003-04-15 2004-12-14 Luminus Devices, Inc. Light emitting devices with improved extraction efficiency
US20050035354A1 (en) * 2003-08-14 2005-02-17 Dicon Fiberoptics, Inc Light emiting diodes with current spreading layer
US20050173717A1 (en) * 2004-02-06 2005-08-11 Ho-Shang Lee Light emitting system with high extraction efficency

Family Cites Families (41)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0730153A (ja) * 1993-07-14 1995-01-31 Hitachi Cable Ltd 発光ダイオードチップ、その台座、及び発光ダイオード
JPH07176788A (ja) 1993-12-17 1995-07-14 Sharp Corp 発光ダイオード
US5679152A (en) 1994-01-27 1997-10-21 Advanced Technology Materials, Inc. Method of making a single crystals Ga*N article
US5779924A (en) 1996-03-22 1998-07-14 Hewlett-Packard Company Ordered interface texturing for a light emitting device
US5955749A (en) * 1996-12-02 1999-09-21 Massachusetts Institute Of Technology Light emitting device utilizing a periodic dielectric structure
EP0874405A3 (de) 1997-03-25 2004-09-15 Mitsubishi Cable Industries, Ltd. Element auf Basis von GaN mit niedriger Versetzungsdichte, seine Verwendung und Herstellungsverfahren
WO1999030373A1 (fr) 1997-12-08 1999-06-17 Mitsubishi Cable Industries, Ltd. DISPOSITIF LUMINEUX SEMI-CONDUCTEUR A BASE DE GaN ET PROCEDE DE PRODUCTION D'UN CRISTAL A BASE DE GaN
US6335548B1 (en) 1999-03-15 2002-01-01 Gentex Corporation Semiconductor radiation emitter package
US6307218B1 (en) 1998-11-20 2001-10-23 Lumileds Lighting, U.S., Llc Electrode structures for light emitting devices
US6363096B1 (en) 1999-08-30 2002-03-26 Lucent Technologies Inc. Article comprising a plastic laser
US6903376B2 (en) * 1999-12-22 2005-06-07 Lumileds Lighting U.S., Llc Selective placement of quantum wells in flipchip light emitting diodes for improved light extraction
JP2001257425A (ja) * 2000-03-13 2001-09-21 Matsushita Electric Ind Co Ltd 半導体レーザ素子及びその製造方法
US7301199B2 (en) 2000-08-22 2007-11-27 President And Fellows Of Harvard College Nanoscale wires and related devices
EP2298968A3 (de) 2000-08-22 2011-10-05 President and Fellows of Harvard College Verfahren zur Züchtung von Nanodrähten
US20030016895A1 (en) 2001-07-23 2003-01-23 Motorola, Inc. Structure and method for fabricating semiconductor structures and devices utilizing photonic crystals
CN100477210C (zh) 2001-09-13 2009-04-08 卢西雅股份公司 发光板和载板
US6744071B2 (en) * 2002-01-28 2004-06-01 Nichia Corporation Nitride semiconductor element with a supporting substrate
JP4233268B2 (ja) * 2002-04-23 2009-03-04 シャープ株式会社 窒化物系半導体発光素子およびその製造方法
US6828596B2 (en) * 2002-06-13 2004-12-07 Lumileds Lighting U.S., Llc Contacting scheme for large and small area semiconductor light emitting flip chip devices
US7072547B2 (en) 2002-06-18 2006-07-04 Massachusetts Institute Of Technology Waveguide coupling into photonic crystal waveguides
KR101030068B1 (ko) 2002-07-08 2011-04-19 니치아 카가쿠 고교 가부시키가이샤 질화물 반도체 소자의 제조방법 및 질화물 반도체 소자
US7335908B2 (en) 2002-07-08 2008-02-26 Qunano Ab Nanostructures and methods for manufacturing the same
AU2003261205A1 (en) 2002-07-19 2004-02-09 President And Fellows Of Harvard College Nanoscale coherent optical components
US6878969B2 (en) 2002-07-29 2005-04-12 Matsushita Electric Works, Ltd. Light emitting device
KR101191632B1 (ko) 2002-09-30 2012-10-17 나노시스, 인크. 대형 나노 인에이블 매크로전자 기판 및 그 사용
US7303875B1 (en) 2002-10-10 2007-12-04 Nanosys, Inc. Nano-chem-FET based biosensors
US7118928B2 (en) * 2002-12-02 2006-10-10 University Of Cincinnati Method of forming a semiconductor phosphor layer by metalorganic chemical vapor deposition for use in light-emitting devices
EP1613549B1 (de) 2003-04-04 2013-08-07 QuNano AB Präzise positionierte nanowhiskern strukturen und verfahren zu ihrer herstellung
EP1467415B1 (de) * 2003-04-08 2019-06-12 Lumileds Holding B.V. Verbesserte LED Effizienz durch photonischen Kristall
US7274043B2 (en) 2003-04-15 2007-09-25 Luminus Devices, Inc. Light emitting diode systems
US7521854B2 (en) 2003-04-15 2009-04-21 Luminus Devices, Inc. Patterned light emitting devices and extraction efficiencies related to the same
US7083993B2 (en) * 2003-04-15 2006-08-01 Luminus Devices, Inc. Methods of making multi-layer light emitting devices
US7262550B2 (en) 2003-04-15 2007-08-28 Luminus Devices, Inc. Light emitting diode utilizing a physical pattern
US7098589B2 (en) 2003-04-15 2006-08-29 Luminus Devices, Inc. Light emitting devices with high light collimation
US7166871B2 (en) 2003-04-15 2007-01-23 Luminus Devices, Inc. Light emitting systems
US7211831B2 (en) 2003-04-15 2007-05-01 Luminus Devices, Inc. Light emitting device with patterned surfaces
US7105861B2 (en) 2003-04-15 2006-09-12 Luminus Devices, Inc. Electronic device contact structures
US7012279B2 (en) 2003-10-21 2006-03-14 Lumileds Lighting U.S., Llc Photonic crystal light emitting device
JP5719493B2 (ja) * 2003-12-09 2015-05-20 ザ リージェンツ オブ ザ ユニバーシティ オブ カリフォルニア 表面粗化による高効率の（Ｂ，Ａｌ，Ｇａ，Ｉｎ）Ｎベースの発光ダイオード
US7450311B2 (en) 2003-12-12 2008-11-11 Luminus Devices, Inc. Optical display systems and methods
US8163575B2 (en) 2005-06-17 2012-04-24 Philips Lumileds Lighting Company Llc Grown photonic crystals in semiconductor light emitting devices

Patent Citations (31)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US213307A (en) * 1879-03-18 Improvement in gun-stocks
US145877A (en) * 1873-12-23 Improvement in windmills
US11431A (en) * 1854-08-01 peters
US51787A (en) * 1866-01-02 Improvement in latch-fastenings
US51785A (en) * 1866-01-02 Improved sealing-ring for preserve-jars
US87757A (en) * 1869-03-16 nelson chapman
US87754A (en) * 1869-03-16 Improvement in implements
US89899A (en) * 1869-05-11 Improvement in hat-spreaders
US109644A (en) * 1870-11-29 Improvement in vehicles
US127375A (en) * 1872-05-28 Improvement in processes and apparatus for removing tin from tin scrap
US130311A (en) * 1872-08-06 Improvement in refrigerator-buildings
US16895A (en) * 1857-03-24 Improved method of regulating the velocity of wind-wheels
US207323A (en) * 1878-08-20 Improvement in grain-elevators
US207320A (en) * 1878-08-20 John h
US40424A (en) * 1863-10-27 Improvement in plaiting-machines
US5371025A (en) * 1991-09-06 1994-12-06 Gold Star, Ltd. Method of making thin film transistors
US6559075B1 (en) * 1996-10-01 2003-05-06 Siemens Aktiengesellschaft Method of separating two layers of material from one another and electronic components produced using this process
US6071795A (en) * 1998-01-23 2000-06-06 The Regents Of The University Of California Separation of thin films from transparent substrates by selective optical processing
US6091085A (en) * 1998-02-19 2000-07-18 Agilent Technologies, Inc. GaN LEDs with improved output coupling efficiency
US6534798B1 (en) * 1999-09-08 2003-03-18 California Institute Of Technology Surface plasmon enhanced light emitting diode and method of operation for the same
US20020004307A1 (en) * 2000-07-05 2002-01-10 Nec Corporation Photonic crystal multilayer substrate and manufacturing method thereof
US20020079497A1 (en) * 2000-09-18 2002-06-27 Anand Gopinath Vertical cavity surface emitting laser with single mode confinement
US20030141507A1 (en) * 2002-01-28 2003-07-31 Krames Michael R. LED efficiency using photonic crystal structure
US20040135155A1 (en) * 2002-02-08 2004-07-15 Matsushita Electric Industrial Co., Ltd. Semiconductor light emitting device and method of fabricating the same
US20030222263A1 (en) * 2002-06-04 2003-12-04 Kopin Corporation High-efficiency light-emitting diodes
US20030235229A1 (en) * 2002-06-19 2003-12-25 Hongyu Deng Vertical cavity surface emitting laser using photonic crystals
US6770353B1 (en) * 2003-01-13 2004-08-03 Hewlett-Packard Development Company, L.P. Co-deposited films with nano-columnar structures and formation process
US20040165850A1 (en) * 2003-02-10 2004-08-26 Kyoto University Two-dimensional photonic crystal cavity and channel add/drop filter
US6831302B2 (en) * 2003-04-15 2004-12-14 Luminus Devices, Inc. Light emitting devices with improved extraction efficiency
US20050035354A1 (en) * 2003-08-14 2005-02-17 Dicon Fiberoptics, Inc Light emiting diodes with current spreading layer
US20050173717A1 (en) * 2004-02-06 2005-08-11 Ho-Shang Lee Light emitting system with high extraction efficency

Cited By (113)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7733007B2 (en) 2003-04-15 2010-06-08 Luminus Devices, Inc. Patterned light emitting devices
US20070114546A1 (en) * 2003-04-15 2007-05-24 Luminus Devices, Inc. Light emitting devices
US20040207310A1 (en) * 2003-04-15 2004-10-21 Erchak Alexei A. Light emitting devices
US8405298B2 (en) 2003-04-15 2013-03-26 Luminus Devices, Inc. Large emission area light-emitting devices
US20040259279A1 (en) * 2003-04-15 2004-12-23 Erchak Alexei A. Light emitting device methods
US20040259285A1 (en) * 2003-04-15 2004-12-23 Erchak Alexei A. Light emitting device methods
US20050040424A1 (en) * 2003-04-15 2005-02-24 Erchak Alexei A. Light emitting diode systems
US20050040419A1 (en) * 2003-04-15 2005-02-24 Luminus Devices, Inc., A Delaware Corporation Light emitting devices
US20050051787A1 (en) * 2003-04-15 2005-03-10 Luminus Devices, Inc., A Delaware Corporation Light emitting devices
US20050051785A1 (en) * 2003-04-15 2005-03-10 Erchak Alexei A. Electronic device contact structures
US7667238B2 (en) 2003-04-15 2010-02-23 Luminus Devices, Inc. Light emitting devices for liquid crystal displays
US7719019B2 (en) 2003-04-15 2010-05-18 Luminus Devices, Inc. Light emitting devices
US20050087757A1 (en) * 2003-04-15 2005-04-28 Luminus Devices, Inc., A Delaware Corporation Light emitting devices
US20050145877A1 (en) * 2003-04-15 2005-07-07 Luminus Devices, Inc. A Delaware Corporation Light emitting devices
US20050151125A1 (en) * 2003-04-15 2005-07-14 Luminus Device Inc., A Delaware Corporation Light emitting devices
US20050167687A1 (en) * 2003-04-15 2005-08-04 Luminus Devices, Inc. Light emitting devices
US20050211994A1 (en) * 2003-04-15 2005-09-29 Luminus Devices, Inc., A Delaware Corporation Light emitting devices
US20050258435A1 (en) * 2003-04-15 2005-11-24 Luminus Devices, Inc., A Delaware Corporation Light-emitting devices
US20040207319A1 (en) * 2003-04-15 2004-10-21 Erchak Alexei A. Light emitting devices
US20040207320A1 (en) * 2003-04-15 2004-10-21 Erchak Alexei A. Light emitting devices
US20090014742A1 (en) * 2003-04-15 2009-01-15 Luminus Devices, Inc. Patterned light emitting devices
US20060043391A1 (en) * 2003-04-15 2006-03-02 Erchak Alexei A Light emitting devices for liquid crystal displays
US20060141648A1 (en) * 2003-04-15 2006-06-29 Luminus Devices, Inc., A Delaware Corporation Light emitting device methods
US7083993B2 (en) 2003-04-15 2006-08-01 Luminus Devices, Inc. Methods of making multi-layer light emitting devices
US20060192194A1 (en) * 2003-04-15 2006-08-31 Luminus Devices, Inc. Electronic device contact structures
US7799585B2 (en) 2003-04-15 2010-09-21 Luminus Devices, Inc. Light emitting device methods
US20060220055A1 (en) * 2003-04-15 2006-10-05 Luminus Devices, Inc. Light emitting diode systems
US7915679B2 (en) 2003-04-15 2011-03-29 Luminus Devices, Inc. Light-emitting devices including a nonperiodic pattern
US20040207323A1 (en) * 2003-04-15 2004-10-21 Erchak Alexei A. Light emitting devices
US20080157111A1 (en) * 2003-04-15 2008-07-03 Luminus Devices, Inc. Light-emitting devices
US7994521B2 (en) 2003-04-15 2011-08-09 Luminus Devices, Inc. Light emitting devices
US8072134B2 (en) 2003-04-15 2011-12-06 Luminus Devices, Inc. Light-emitting devices
US9219200B2 (en) 2003-04-15 2015-12-22 Luminus Devices, Inc. Large emission area light-emitting devices
US8513692B2 (en) 2003-04-15 2013-08-20 Luminus Devices, Inc. Light emitting devices
US20090230545A1 (en) * 2003-04-15 2009-09-17 Luminus Devices, Inc. Electronic device contact structures
US7737450B2 (en) 2003-04-15 2010-06-15 Luminus Devices, Inc. Light emitting diode systems
US8217415B2 (en) 2003-04-15 2012-07-10 Luminus Devices, Inc. Electronic device contact structures
US7341880B2 (en) 2003-09-17 2008-03-11 Luminus Devices, Inc. Light emitting device processes
US20050059179A1 (en) * 2003-09-17 2005-03-17 Erchak Alexei A. Light emitting device processes
US20050059178A1 (en) * 2003-09-17 2005-03-17 Erchak Alexei A. Light emitting device processes
US8251520B2 (en) 2003-12-12 2012-08-28 Luminus Devices, Inc. Optical display systems and methods
US20070115556A1 (en) * 2003-12-12 2007-05-24 Luminus Devices, Inc. Optical display systems and methods
US7934841B2 (en) 2003-12-12 2011-05-03 Luminus Devices, Inc. Optical display systems and methods
US20090121657A1 (en) * 2003-12-12 2009-05-14 Luminus Devices, Inc. Optical display systems and methods
US20070267646A1 (en) * 2004-06-03 2007-11-22 Philips Lumileds Lighting Company, Llc Light Emitting Device Including a Photonic Crystal and a Luminescent Ceramic
US9359260B2 (en) 2004-06-03 2016-06-07 Lumileds Llc Luminescent ceramic for a light emitting device
US9722148B2 (en) 2004-06-03 2017-08-01 Lumileds Llc Luminescent ceramic for a light emitting device
US8426872B2 (en) 2004-08-20 2013-04-23 Luminus Devices, Inc. Light emitting diode systems including optical display systems having a microdisplay
US20060038188A1 (en) * 2004-08-20 2006-02-23 Erchak Alexei A Light emitting diode systems
US20060043400A1 (en) * 2004-08-31 2006-03-02 Erchak Alexei A Polarized light emitting device
US20060076565A1 (en) * 2004-09-29 2006-04-13 Hitoshi Murofushi Semiconductor light emitting element and fabrication method thereof
US7560737B2 (en) * 2004-09-29 2009-07-14 Sanken Electric Co., Ltd. Semiconductor light emitting element and fabrication method thereof
US20060204865A1 (en) * 2005-03-08 2006-09-14 Luminus Devices, Inc. Patterned light-emitting devices
US11251272B2 (en) * 2005-05-17 2022-02-15 Taiwan Semiconductor Manufacturing Company, Ltd. Lattice-mismatched semiconductor structures with reduced dislocation defect densities and related methods for device fabrication
US20070045640A1 (en) * 2005-08-23 2007-03-01 Erchak Alexei A Light emitting devices for liquid crystal displays
US8162526B2 (en) 2005-08-23 2012-04-24 Rambus International Ltd. Light-emitting devices for liquid crystal displays
US20070081336A1 (en) * 2005-10-11 2007-04-12 Bierhuizen Serge J Illumination system with optical concentrator and wavelength converting element
US7543959B2 (en) 2005-10-11 2009-06-09 Philips Lumiled Lighting Company, Llc Illumination system with optical concentrator and wavelength converting element
US20100327305A1 (en) * 2005-10-14 2010-12-30 The Regents Of The University Of California Photonic structures for efficient light extraction and conversion in multi-color light emitting devices
US8227825B2 (en) 2005-10-14 2012-07-24 The Regents Of The University Of California Photonic structures for efficient light extraction and conversion in multi-color light emitting devices
JP2009512220A (ja) * 2005-10-14 2009-03-19 ザ リージェンツ オブ ザ ユニバーシティ オブ カリフォルニア 多色光発光装置での効率的光抽出および変換のためのフォトニック構造
US20070085100A1 (en) * 2005-10-14 2007-04-19 The Regents Of The University Of California Photonic structures for efficient light extraction and conversion in multi-color light emitting devices
US20090014740A1 (en) * 2005-10-17 2009-01-15 Luminus Devices, Inc. Light emitting devices and related methods
US7348603B2 (en) 2005-10-17 2008-03-25 Luminus Devices, Inc. Anisotropic collimation devices and related methods
US7388233B2 (en) 2005-10-17 2008-06-17 Luminus Devices, Inc. Patchwork patterned devices and related methods
US20070085098A1 (en) * 2005-10-17 2007-04-19 Luminus Devices, Inc. Patterned devices and related methods
US20070087459A1 (en) * 2005-10-17 2007-04-19 Luminus Devices, Inc. Patchwork patterned devices and related methods
US20070085083A1 (en) * 2005-10-17 2007-04-19 Luminus Devices, Inc. Anisotropic collimation devices and related methods
US7391059B2 (en) 2005-10-17 2008-06-24 Luminus Devices, Inc. Isotropic collimation devices and related methods
WO2007055468A1 (en) * 2005-11-10 2007-05-18 Seoul Opto Device Co., Ltd. Ac light emitting device having photonic crystal structure and method of fabricating the same
KR100721454B1 (ko) * 2005-11-10 2007-05-23 서울옵토디바이스주식회사 광 결정 구조체를 갖는 교류용 발광소자 및 그것을제조하는 방법
US7901964B2 (en) 2005-11-10 2011-03-08 Seoul Opto Device Co., Ltd. Method of fabricating AC light emitting device having photonic crystal structure
US20080237613A1 (en) * 2005-11-10 2008-10-02 Seoul Opto Device Co., Ltd. Ac Light Emitting Device Having Photonic Crystal Structure and Method of Fabricating the Same
US8716727B2 (en) 2005-11-10 2014-05-06 Seoul Opto Device Co., Ltd. Ac light emitting device having photonic crystal structure and method of fabricating the same
US20090311816A1 (en) * 2005-11-10 2009-12-17 Seoul Opto Device Co., Ltd. Ac light emitting device having photonic crystal structure and method of fabricating the same
US20070181889A1 (en) * 2006-02-08 2007-08-09 Kenji Orita Semiconductor light emitting device and method for manufacturing the same
US7867885B2 (en) * 2006-03-23 2011-01-11 Lg Electronics Inc. Post structure, semiconductor device and light emitting device using the structure, and method for forming the same
US20070224831A1 (en) * 2006-03-23 2007-09-27 Lg Electronics Inc. Post structure, semiconductor device and light emitting device using the structure, and method for forming the same
KR100794121B1 (ko) 2006-04-10 2008-01-10 광주과학기술원 발광 다이오드
DE102006017573A1 (de) * 2006-04-13 2007-10-18 Osram Opto Semiconductors Gmbh Optoelektronischer Halbleiterkörper und Verfahren zu dessen Herstellung
US8110838B2 (en) 2006-12-08 2012-02-07 Luminus Devices, Inc. Spatial localization of light-generating portions in LEDs
US9911896B2 (en) * 2006-12-22 2018-03-06 Koninklijke Phillips N.V. Semiconductor light emitting device growing active layer on textured surface
US10312404B2 (en) 2006-12-22 2019-06-04 Lumileds Llc Semiconductor light emitting device growing active layer on textured surface
US20100264454A1 (en) * 2006-12-22 2010-10-21 Koninklijke Philips Electronics N.V. Semiconductor light emitting device growing active layer on textured surface
US8815622B2 (en) 2007-03-20 2014-08-26 Luminus Devices, Inc. Laser liftoff structure and related methods
US8455285B2 (en) 2007-03-20 2013-06-04 Luminus Devices, Inc. Laser liftoff structure and related methods
US8110425B2 (en) 2007-03-20 2012-02-07 Luminus Devices, Inc. Laser liftoff structure and related methods
US20080277681A1 (en) * 2007-05-09 2008-11-13 Tsinghua University Light emitting diode
US7812361B2 (en) 2007-05-09 2010-10-12 Tsinghua University Light emitting diode
WO2009016529A1 (en) * 2007-07-27 2009-02-05 Koninklijke Philips Electronics N.V. Light emitting device including a photonic crystal and a luminescent ceramic
CN101821862A (zh) * 2007-07-27 2010-09-01 皇家飞利浦电子股份有限公司 包括光子晶体和发光陶瓷的发光装置
US20110079810A1 (en) * 2008-05-02 2011-04-07 Osram Opto Semiconductors Gmbh Optoelectronic Semiconductor Chip Comprising a Reflective Layer
DE102008024327A1 (de) * 2008-05-20 2009-11-26 Osram Opto Semiconductors Gmbh Optoelektronischer Halbleiterchip mit einer reflektierenden Schicht
US8710512B2 (en) 2008-05-20 2014-04-29 Osram Opto Semiconductors Gmbh Optoelectronic semiconductor chip comprising a reflective layer
US9620680B2 (en) 2008-10-09 2017-04-11 Osram Opto Semiconductors Gmbh Optoelectronic semiconductor body
WO2010101332A1 (ko) * 2009-03-03 2010-09-10 엘지이노텍주식회사 발광소자
US20100224854A1 (en) * 2009-03-03 2010-09-09 Jin Wook Lee Light emitting device
US8569084B2 (en) 2009-03-03 2013-10-29 Lg Innotek Co., Ltd. Method for fabricating light emitting device including photonic crystal structures
KR101088476B1 (ko) 2009-10-16 2011-11-30 광주과학기술원 발광 다이오드 및 이의 제조방법
US20120286287A1 (en) * 2009-11-27 2012-11-15 Pohang University Of Science And Technology Academy-Industry Foundation Vertical gallium nitride-based light emitting diode and method of manufacturing the same
US8860070B2 (en) * 2009-11-27 2014-10-14 Seoul Viosys Co., Ltd. Vertical gallium nitride-based light emitting diode and method of manufacturing the same
WO2011065766A2 (en) * 2009-11-27 2011-06-03 Seoul Opto Device Co., Ltd. Vertical gallium nitride-based light emttting diode and method of manufacturing the same
WO2011065766A3 (en) * 2009-11-27 2011-08-25 Seoul Opto Device Co., Ltd. Vertical gallium nitride-based light emttting diode and method of manufacturing the same
US20110177638A1 (en) * 2010-01-15 2011-07-21 Koninklijke Philips Electronics N.V. Semiconductor light emitting device with curvature control layer
US8931906B2 (en) * 2010-08-27 2015-01-13 Industrial Technology Research Institute Light emitting unit array and projection system
US20120050694A1 (en) * 2010-08-27 2012-03-01 Industrial Technology Research Institute Light emitting unit array and projection system
WO2012030360A1 (en) * 2010-08-30 2012-03-08 Invenlux Corporation Light-emitting devices with two-dimensional composition-fluctuation active-region and method for fabricating the same
TWI412157B (zh) * 2010-09-16 2013-10-11 Univ Nat Taiwan 發光元件之製作方法
US20120070922A1 (en) * 2010-09-16 2012-03-22 National Taiwan University Method for forming light emitting device
US8153457B1 (en) * 2010-09-16 2012-04-10 National Taiwan University Method for forming light emitting device
US9595616B1 (en) * 2015-12-02 2017-03-14 Sandia Corporation Vertical III-nitride thin-film power diode
CN108363249A (zh) * 2018-03-14 2018-08-03 京东方科技集团股份有限公司 一种显示面板、其驱动方法及显示装置
CN109119519A (zh) * 2018-09-29 2019-01-01 华南理工大学 欧姆接触性能优化的光子晶体led芯片及其制备方法

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Free format text: CHANGE OF NAME;ASSIGNORS:LUMILEDS LIGHTING U.S., LLC;LUMILEDS LIGHTING, U.S., LLC;LUMILEDS LIGHTING, U.S. LLC;AND OTHERS;REEL/FRAME:025850/0770

Effective date: 20110211

AS Assignment

Owner name: LUMILEDS LLC, CALIFORNIA

Free format text: CHANGE OF NAME;ASSIGNOR:PHILIPS LUMILEDS LIGHTING COMPANY LLC;REEL/FRAME:046623/0030

Effective date: 20150326