US20040246692A1 - Electronic circuit component - Google Patents

Electronic circuit component Download PDF

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Publication number
US20040246692A1
US20040246692A1 US10/483,326 US48332604A US2004246692A1 US 20040246692 A1 US20040246692 A1 US 20040246692A1 US 48332604 A US48332604 A US 48332604A US 2004246692 A1 US2004246692 A1 US 2004246692A1
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United States
Prior art keywords
electronic circuit
metal wiring
film
elements
electrodes
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
US10/483,326
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English (en)
Inventor
Toshiya Satoh
Masahiko Ogino
Takao Miwa
Takashi Naitou
Takashi Namekawa
Toshihide Nabatame
Shigehisa Motowaki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Assigned to HITACHI, LTD. reassignment HITACHI, LTD. ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). Assignors: MOTOWAKI, SHIGEHISA, MIWA, TAKAO, NABATAME, TOSHIHIDE, NAMEKAWA, TAKASHI, NAITOU, TAKASHI, OGINO, MASAHIKO, SATOH, TOSHIYA
Publication of US20040246692A1 publication Critical patent/US20040246692A1/en
Priority to US11/834,452 priority Critical patent/US7586755B2/en
Abandoned legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
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    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/13—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body combined with thin-film or thick-film passive components
    • H—ELECTRICITY
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    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
    • H01L23/49822—Multilayer substrates
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    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
    • H01L23/49827—Via connections through the substrates, e.g. pins going through the substrate, coaxial cables
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    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/01—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate comprising only passive thin-film or thick-film elements formed on a common insulating substrate
    • H01L27/016—Thin-film circuits
    • H—ELECTRICITY
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    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
    • H01L27/0611—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region
    • H01L27/0641—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region without components of the field effect type
    • H01L27/0676—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region without components of the field effect type comprising combinations of diodes, or capacitors or resistors
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    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00—Printed circuits
    • H05K1/16—Printed circuits incorporating printed electric components, e.g. printed resistor, capacitor, inductor
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    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F17/00—Fixed inductances of the signal type 
    • H01F17/0006—Printed inductances
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    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
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    • H01L2924/11—Device type
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    • H01L2924/19—Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
    • H01L2924/1901—Structure
    • H01L2924/19011—Structure including integrated passive components
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    • H05K1/00—Printed circuits
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    • H05K1/162—Printed circuits incorporating printed electric components, e.g. printed resistor, capacitor, inductor incorporating printed capacitors
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
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    • H05K1/00—Printed circuits
    • H05K1/16—Printed circuits incorporating printed electric components, e.g. printed resistor, capacitor, inductor
    • H05K1/165—Printed circuits incorporating printed electric components, e.g. printed resistor, capacitor, inductor incorporating printed inductors
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
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    • H05K1/00—Printed circuits
    • H05K1/16—Printed circuits incorporating printed electric components, e.g. printed resistor, capacitor, inductor
    • H05K1/167—Printed circuits incorporating printed electric components, e.g. printed resistor, capacitor, inductor incorporating printed resistors
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
    • H05K2201/09—Shape and layout
    • H05K2201/09209—Shape and layout details of conductors
    • H05K2201/095—Conductive through-holes or vias
    • H05K2201/09536—Buried plated through-holes, i.e. plated through-holes formed in a core before lamination
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
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    • H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
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    • H05K2201/09818—Shape or layout details not covered by a single group of H05K2201/09009 - H05K2201/09809
    • H05K2201/09827—Tapered, e.g. tapered hole, via or groove
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    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
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    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/22—Secondary treatment of printed circuits
    • H05K3/28—Applying non-metallic protective coatings
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    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
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    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/30—Assembling printed circuits with electric components, e.g. with resistor
    • H05K3/32—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits
    • H05K3/34—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits by soldering
    • H05K3/3457—Solder materials or compositions; Methods of application thereof
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    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/46—Manufacturing multilayer circuits
    • H05K3/4602—Manufacturing multilayer circuits characterized by a special circuit board as base or central core whereon additional circuit layers are built or additional circuit boards are laminated
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/46—Manufacturing multilayer circuits
    • H05K3/4644—Manufacturing multilayer circuits by building the multilayer layer by layer, i.e. build-up multilayer circuits

Definitions

  • the present invention relates to an electronic part and the manufacturing method thereof, in particular, relates to a technology which is effective when being applied to an electronic part using glass for the substrate and a manufacturing method therefore.
  • JP-A-8-255981 discloses a technology in which, by using an exposing process for a photo sensitive material with ultraviolet light, microscopic via holes and wirings are formed on a glass substrate.
  • a light shielding film of a metal constituting of such as Ti, Cr, Al, Ni, W, Mo, Ta and Cu on the glass substrate, multiple reflection of ultraviolet between the upper and lower faces of the glass substrate is prevented at the time of the exposing process of the photo sensitive material.
  • the film thickness of the light shielding film constituted by one of the above metals more than 3 ⁇ m, the heat conductivity of the glass substrate is enhanced.
  • JP-A-9-321184 discloses a connection substrate for connecting a semiconductor chip having a high wiring density with a printed wire substrate having a low wiring density and manufacturing method thereof.
  • the connection substrate is constituted by a photosensitive glass substrate and on the upper face thereof one layer wiring is formed to which a bump for the chip is connected. Further, on the lower face of the substrate a plurality of bumps are formed, which are connected to electrodes on the printed wire substrate.
  • the wirings on the upper face of the substrate and the bump on the lower face are electrically connected through holes penetrating between the upper and lower faces of the substrate. These penetrating holes are formed through a photolithography and the insides thereof conductors are buried through plating.
  • JP-A-2000-124358 discloses a technology of a high frequency integrated circuit mounting an active element in which an MIM type capacitor, a spiral inductor, a thin film resistor and metal wirings for connecting these are arranged on a silicon substrate and further, a flip chip is mounted thereon. Further, the claims thereof cover the use of a glass substrate, although the details thereof and the advantages thereof are not disclosed.
  • JP-A-10-284694 discloses a technology of constituting an electronic circuit on a poly crystal silicon substrate having a resistivity of more than 200 ⁇ cm.
  • the wiring substrate for mounting an electronic parts one in which Cu wirings are formed on a resin substrate constituted such as epoxy resin containing glass fibers (glass epoxy) and polyimide resin or one in which W wirings are formed on a ceramics substrate such as AlN and SiC are broadly used.
  • the wiring substrate for mounting electronics parts the general use property of the silicon substrate, which is suitable for forming the microscopic wirings is low in comparison with such as the glass epoxy substrate, and it's usage is limited.
  • the single crystal silicon substrate is a semiconductor, the substrate operates to reduce the efficiency of the electronic parts such as a capacitor and inductor formed thereon.
  • the poly crystal silicon substrate can prevent in some extent the efficiency reduction, however, the poly crystal silicon substrate is more expensive than the single crystal silicon and the general use property thereof as the wiring substrate for mounting electronic parts is low and the usage thereof is limited.
  • the glass shows characteristics that the warp and the size variation are small in comparison with such as the resin and ceramics and the cost thereof is inexpensive in comparison with the silicon, it is considered that glass is a suitable substrate material for mounting electronic parts in high density. Further, the glass substrate is a desirable insulator, therefore the elements such as the inductors formed thereon show a high efficiency.
  • the respective constituting elements formed on the glass substrate are structured to be exposed at the end face of the substrate, when a large mechanical stress is applied at the interface regions of the respective layers constituting the electronic circuit component at the time of cutting out such as by dicing from the glass substrate larger than the electronic part, and when a large thermal stress is applied at the interfaces of the respective layers in connection with sudden temperature variation caused at the time of mounting the electronic circuit component, these stresses are concentratedly applied on the substrate exposed at the end faces of the electronic circuit component and the interface regions of the respective layers, thereby, the interface regions of the respective layers may be peeled off and the electronic circuit component may be damaged.
  • An object of the present invention is to provide an electronic circuit component, which integrates a variety of electronic parts such as a capacitor, inductor and resistor in a high performance and in a high density.
  • an electronic circuit component comprises an insulator substrate, a plurality of electrodes having different areas provided on the insulator substrate, one or more elements selected from a capacitor element of dielectric material sandwiched between the electrodes, an inductor element and resistor element, a metal wiring connecting the elements, a metal terminal part of a part of the metal wiring and an organic insulator material covering the elements and the circumference of the metal wiring portion excluding the metal terminal portion, with the above provision an electronic circuit component, which shows a desirable manufacturing yield and permits to integrate in a high density a variety of electronic parts such as the capacitor, inductor and resistor can be obtained.
  • an electronic circuit component comprises an insulator substrate, a plurality of electrodes provided on the insulator substrate, one or more elements selected from a capacitor element of dielectric material sandwiched between the electrodes, an inductor element and resistor element, a connecting portion provide at portions other than end portions of the electrodes, a metal wiring connecting the elements and the connecting portion, a metal terminal part of a part of the metal wiring and an organic insulator material covering the elements and the circumference of the metal wiring portion excluding the metal terminal portion, with the above provision a n electronic circuit component, which shows a desirable manufacturing yield and permits to integrate in a high density a variety of electronic parts such as the capacitor, inductor and resistor can be obtained.
  • an electronic circuit component comprises an insulator substrate, a plurality of electrodes provided on the insulator substrate, one or more elements selected from a capacitor element of dielectric material sandwiched between the electrodes, an inductor element and resistor element, a metal wiring connecting the elements, a metal terminal part of a part of the metal wiring and being arranged in a grid shape and an organic insulator material covering the elements and the circumference of the metal wiring portion excluding the metal terminal portion, with the above provision an electronic circuit component, which shows a desirable manufacturing yield and permits to integrate in a high density a variety of electronic parts such as the capacitor, inductor and resistor can be obtained and to ease connection with other parts such as a connection substrate.
  • an electronic circuit component comprises an insulator substrate, a plurality of electrodes provided on the insulator substrate, one or more elements selected from a capacitor element of dielectric material sandwiched between the electrodes, an inductor element and resistor element, a metal wiring connecting the elements, a metal terminal part of a part of the metal wiring and a plurality of organic insulator materials covering the elements and the circumference of the metal wiring portion excluding the metal terminal portion, with the above provision an electronic circuit component, which shows a desirable manufacturing yield and permits to integrate in a high density and in a high performance a variety of electronic parts such as the capacitor, inductor and resistor through selection of the organic insulator materials suitable for the necessary high frequency characteristics of the respective elements can be obtained.
  • an electronic circuit component comprises an insulator substrate at predetermined position of which through holes are provided, a plurality of electrodes having different areas provided on both faces of the main face and the sub-main face or one of the faces of the insulator substrate, one or more elements selected from a capacitor element of dielectric material sandwiched between the electrodes, an inductor element and resistor element, a metal wiring connecting the elements, a conductor portions formed inside the through holes for electrically connecting the metal wiring, a metal terminal part of a part of the metal wiring and an organic insulator material covering the elements and the circumference of the metal wiring portion excluding the metal terminal portion, with the above provision an electronic circuit component, which shows a desirable manufacturing yield and permits to integrate in a high density a variety of electronic parts such as the capacitor, inductor and resistor can be obtained.
  • an electronic circuit component comprises an insulator substrate at predetermined position of which through holes are provided, a plurality of electrodes having different areas provided on both faces of the main face and the sub-main face or one of the faces of the insulator substrate, one or more elements selected from a capacitor element of dielectric material sandwiched between the electrodes, an inductor element and resistor element, connecting portions provided at portions other than end portions of the electrodes, a metal wiring connecting the elements and the connecting portions, a conductor portions formed inside the through holes for electrically connecting the metal wiring, a metal terminal part of a part of the metal wiring and an organic insulator material covering the elements and the circumference of the metal wiring portion excluding the metal terminal portion, with the above provision an electronic circuit component , which shows a desirable manufacturing yield and permits to integrate in a high density a variety of electronic parts such as the capacitor, inductor and resistor can be obtained.
  • an electronic circuit component comprises an insulator substrate at predetermined position of which through holes are provided, a plurality of electrodes having different areas provided on both faces of the main face and the sub-main face or one of the faces of the insulator substrate, one or more elements selected from a capacitor element of dielectric material sandwiched between the electrodes, an inductor element and resistor element, a metal wiring connecting the elements, a conductor portions formed inside the through holes for electrically connecting the metal wiring, a metal terminal part of a part of the metal wiring and being arranged in a grid shape and an organic insulator material covering the elements and the circumference of the metal wiring portion excluding the metal terminal portion, with the above provision an electronic circuit component, which shows a desirable manufacturing yield and permits to integrate in a high density a variety of electronic parts such as the capacitor, inductor and resistor and to ease connection with other parts such as a connection substrate can be obtained.
  • an electronic circuit component comprises an insulator substrate at predetermined position of which through holes are provided, a plurality of electrodes provided on both faces of the main face and the sub-main face or one of the faces of the insulator substrate, one or more elements selected from a capacitor element of dielectric material sandwiched between the electrodes, an inductor element and resistor element, a metal wiring connecting the elements, a conductor portions formed inside the through holes for electrically connecting the metal wiring, a metal terminal part of a part of the metal wiring and a plurality of organic insulator materials covering the elements and the circumference of the metal wiring portion excluding the metal terminal portion, with the above provision an electronic circuit component, which shows a desirable manufacturing yield and permits to integrate in a high density and in a high performance a variety of electronic parts such as the capacitor, inductor and resistor through selection of the organic insulator materials suitable for the necessary frequency characteristics of the respective elements can be obtained.
  • an electronic circuit component comprises an insulator substrate at predetermined position of which through holes are provided, a plurality of electrodes provided on both faces of the main face and the sub-main face or one of the faces of the insulator substrate, one or more elements selected from a capacitor element of dielectric material sandwiched between the electrodes, an inductor element and resistor element, a metal wiring connecting the elements, a conductor portions formed inside the through holes for electrically connecting the metal wiring, a metal terminal part of a part of the metal wiring, a first organic insulator material covering the elements provided on the main face of the insulator substrate and the circumference of the metal wiring portion excluding the metal terminal portion and a second organic insulator material covering the elements provided on the sub-main of the insulator substrate and the circumference of the metal wiring portion excluding the metal terminal portion, with the above provision an electronic circuit component, which shows a desirable manufacturing yield and permits to integrate in a high density and in a high performance a variety of electronic parts such
  • an electronic circuit component comprises an insulator substrate at predetermined position of which through holes are provided, a plurality of electrodes provided on both faces of the main face and the sub-main face or one of the faces of the insulator substrate, one or more elements selected from a capacitor element of dielectric material sandwiched between the electrodes, an inductor element and resistor element, a metal wiring connecting the elements, a conductor portions formed inside the through holes for electrically connecting the metal wiring, a metal terminal part of a part of the metal wiring and being provided on the other face where the inductor element is provided and an organic insulator material covering the elements and the circumference of the metal wiring portion excluding the metal terminal portion, with the above provision an electronic circuit component, which shows a desirable manufacturing yield, reduces an influence to the inductor element from electronic parts mounted on the substrate and permits to integrate in a high density and in a high performance a variety of electronic parts such as the capacitor, inductor and resistor can be obtained.
  • an electronic circuit component comprises an insulator substrate at predetermined position of which through holes are provided, a plurality of electrodes provided on both faces of the main face and the sub-main face or one of the faces of the insulator substrate, one or more elements selected from a capacitor element of dielectric material sandwiched between the electrodes, an inductor element and resistor element, a metal wiring connecting the elements, a conductor portions constituted of a conductive material, core forming material and glass and formed inside the through holes for electrically connecting the metal wiring, a metal terminal part of a part of the metal wiring and an organic insulator material covering the elements and the circumference of the metal wiring portion excluding the metal terminal portion, with the above provision an electronic circuit component, which shows a desirable manufacturing yield, ensures electrical conduction between both faces of the substrate and permits to integrate in a high density and in a high performance a variety of electronic parts such as the capacitor, inductor and resistor can be obtained.
  • the capacitor element of a dielectric material formed being sandwiched between the electrodes, the inductor element and the resistor element with respect to the insulator substrate are differentiated, the capacitor, inductor and resistor elements can be integrated in a further high density.
  • a low dielectric loss tangent resin composition which includes a bridging component having a plurality of styrene groups as expressed by the following general chemical formula and contains polymers having average molecular weight of more than 5000, a further high performance and high efficiency electronic circuit component can be obtained with a low cost because of the low cost property, low dielectric constant and low dielectric loss tangent of the low dielectric loss tangent resin compositions.
  • R represents a hydrocarbon skeleton, which may include a substituent
  • R 1 represents one of hydrogen, methyl and ethyl
  • m represents 1 from 4
  • n represents an integer more than 1).
  • the organic insulator is BCB (Benzo Cyclo Butene)
  • BCB Benzo Cyclo Butene
  • the dielectric material is an oxide of any of Ta, Mg and Sr
  • a low cost, high reliability and high performance electronic circuit component can be obtained because of low cost and high stability property of Ta, Mg and Sr.
  • the oxide of Ta is used for the dielectric material
  • the dielectric strength thereof can be enhanced
  • Q value can be enhanced and when the oxide of Sr is used, a high ⁇ can be obtained.
  • Q value represents a sharpness of resonance (frequency selectivity) and is defined according to the following equation;
  • Im(Z) and Re(Z) are impedances in an imaginary part and real part one port (a terminal pair) of the respective elements.
  • the capacitor elements of the present invention are constituted by one or more of capacitor elements having a structure in which an inorganic dielectric material is sandwiched by two metal electrodes and one or more capacitor elements having a structure in which an organic dielectric material is sandwiched by two electrodes. Further, the end portion of the metal electrode adjacent the glass substrate of the capacitor element is preferably covered by an insulator other than the dielectric material.
  • the metal electrode is preferably to be a low electrical resistance conductive material. More specifically, such as gold, copper, nickel, aluminum, platinum, tungsten, molybdenum, iron, niobium, titanium, nickel/chromium alloy, iron/nickel/chromium alloy and tantalum nitride are enumerated for the material. In particular, copper is preferable because of it's low electric resistance. Further, the surface of the metal electrode is required to be flat and the unevenness of the surface is preferable to be below ⁇ fraction (1/25) ⁇ of the thickness of the dielectric body.
  • a laser processing or a high temperature burning can be applied during the dielectric layer formation and a high performance (due to applicability of a high ⁇ dielectric material) and an enhancement of manufacturing yield can be realized.
  • the metal electrode other than one in which after forming the conductive material in a film having a predetermined film thickness, a resist pattern is formed and the electrode is formed by dry or wet etching, after forming the resist pattern, the electrode can be formed by electro or electro less plating.
  • a plating method when a plating method is used, a resistance reduction, high efficiency and high performance can be achieved, because a thick film wiring can be realized. Further, when a spattering method is used, a minuting, size reduction and high performance can be achieved, because a formation of a minute pattern can be realized.
  • the inorganic material is not limited, if the material is used commonly as a capacitor use dielectric material, for example, oxides of Ta, Mg and Sr are enumerated. Specifically, other than oxides such as Ta 2 O 5 , BsT(Ba(x)Sr(1 ⁇ x)TiO(3), 0 ⁇ 1), SrTiO 3 , TiO2, MnO 2 , Y 2 O 3 , SnO 2 and MgTiO 3 , barium titanium oxide, compound formed by doping zirconium and tin into barium titanium oxide, WO 3 , SrO, mixed barium/strontium oxide, BaWO 4 , and CeO 2 are enumerated.
  • the method of forming the dielectric layer is not limited and a spattering method, a dry method such as plasma CVD method and a wet method such as anodic oxidation method can be used.
  • a dielectric layer formation with dry method such as spattering method and etching method enables a minute pattern, which is effective for minuting, size reduction and high performance.
  • a dielectric layer formation with wet methods such as sol-gel method and anodic oxidation method can simplify the processing steps, which is effective for reducing the cost.
  • the organic material is not limited, if such is an organic material commonly used for semiconductor whether such is thermo setting or thermo plastic.
  • an organic material commonly used for semiconductor whether such is thermo setting or thermo plastic.
  • polyimide, polycarbonate, polyester, poly tetra flu oro ethylene, polystylene, polypropylene, poly vinylidene fluoride, cellulose acetate, polysulfone, polyacrylonitrile, polyamide, polyamideimide, epoxy, maleimide, phenol, isocyanate, polyolefin, polyurethane and compounds thereof can be used.
  • Mixture formed by adding a rubber component such as acrylic rubber silicone rubber and nitrylbutadiene rubber, an organic compound filler such as polyimide filler and an inorganic filler such as silica to any of the above compounds.
  • the organic material can be formed by a photosensitive material containing any of the compounds above.
  • a photosensitive insulator material When a photosensitive insulator material is used, the process of forming a resist on the insulator material can be eliminated, thereby, the manufacturing yield can be enhanced. Further, a microfabrication is enabled, which can realize size reduction.
  • polyimide resin is preferable because of it's excellent heat resistance and chemical resistance, and further, the polyimide provided with photosensitivity is preferable because of it' excellent workability. Further, benzo cyclo butene is preferable because of it's low dielectric loss tangent, when the capacitor of the present invention is used for a high frequency parts.
  • resin composition having low dielectric loss tangent as expressed by the following general chemical formula which includes a bridging component having a plurality of styrene groups and further, includes polymers having weight average molecular weight of more than 5000 is also preferable, because the transmission loss can be reduced.
  • hydrocarbon skeletons containing alkylene groups such as methylene and ethylene.
  • alkylene groups such as methylene and ethylene.
  • 1,2-bis (p-biphenyl) ethane, 1,2-bis (m-biphenyl) ethane and their equivalents, homopolymer of divinyl benzene having vinyl group at the side chains and oligomers of copolymers such as with styrene are enumerated.
  • R represents a hydrocarbon skeleton, which may include a substituent
  • R 1 represents one of hydrogen, methyl and ethyl
  • m represents 1 from 4
  • n represents an integer more than 1).
  • a function as a stress buffer can be provided for the above organic insulator material.
  • a function as a stress buffer can be provided for the above organic insulator material.
  • the formation methods thereof include a pattern printing method such as a printing method, an ink jet method and an electro photography method, a method such as a film pasting method and spin coating method in which after forming organic insulation material, patterns are formed such as by photo process and laser and combination thereof.
  • thermosetting resins such as epoxy resin, unsaturated polyester resin, epoxy isocyanate resin, maleimide resin, maleimide epoxy resin, cyanic acid ester resin, cyanic acid ester epoxy resin, cyanic acid ester maleimide resin, phenol resin, diallyl phthalate resin, urethane resin, cyanamide resin and maleimide cyanamide resin, materials formed by combining two or more resins above and materials mixing inorganic filler therein can be used. Further, by providing a photosensitivity to the above resin and through a predetermined exposure and developing process the shape of the stress buffering layer can be controlled.
  • the organic insulators different insulation materials can be used between layers.
  • different insulation materials a proper material depending on the required property for the particular portion such as low loss and chemical resistance can be selected, which help to achieve high performance.
  • organic insulators are formed on both sides of the insulator substrate while sandwiching the same, if different organic materials are used, the same advantage as above can be obtained.
  • the inductor element of the present invention is not in particular limited, if the same is an inductive circuit element, for example, such as a spiral type formed on a plane, one formed by laminating the spiral type, and a solenoid type can be used. Further, the inductance thereof is preferable to be in a range of 10 nH/mm 2 ⁇ 100 nH/mm 2 .
  • the inductor element and the metal wiring can be either a same material or different material and the material therefor is selected properly according to electrical conductivity, adhesive property with the surrounding materials and formation method.
  • the formation method therefor is not in particular limited.
  • Cu film can be formed by making use of spattering method and such as Ti and Cr films can be formed at the interface thereof in view of adhesive property with the surrounding materials.
  • the inductor element can be formed by electrolytic plating.
  • patterning methods of the wiring and the inductor element common wire patterning methods such as etching method and lift off method can be used.
  • the wiring and the inductor element can also be formed through printing method by making use of resin paste containing metal such as Ag. Still further, when the forming temperature of the inorganic dielectric layer is high, a metal having oxidation resistant and heat resistant property such as Pt can be used.
  • a metal having oxidation resistant and heat resistant property such as Pt can be used.
  • the resistance element of the present invention is structured by sandwiching a resistance material between two metal electrodes and the resistance material is not limited in particular, if a common resistor material is used therefor, and for example, such as CrSi and TiN can be used therefor.
  • the formation method therefor is also not limited in particular and for example, such as spattering method and plasma CVD method can be used.
  • the resistance element is formed at the lowest layer, the burning thereof at a higher temperature than the curing temperature of the insulation material is permit ted, which is effective for enhancing the manufacturing yield and the cost reduction.
  • the insulator substrate of the present invention is not in particular limited, if the same does not reduce the efficiency of the respective elements and shows a high insulation property. Further, the glass substrate of the present invention is also not in particular limited, if the same does not reduce the efficiency of the respective elements and shows a high insulation property and is selected in view of strength and workability thereof. Specifically, glasses containing at least one rare earth element selected among the group including Sc, Y, La, Pr, Nd, Pm, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb and Lu are in particular preferable.
  • the rare earth element is contained in a range of 0.5 ⁇ 20 weight % with respect to the entire glass components when converted based on oxide of Ln 2 O 3 (Ln is a rare earth element) and as the other components it is preferable that SiO 2 :40 ⁇ 80 weight %, B 2 O 3 :0 ⁇ 20 weight %, R 2 O (R 2 is alkali metal):0 ⁇ 20 Weight %, RO (R is alkaline earth metal):0 ⁇ 20 weight % and Al 2 O 3 :0 ⁇ 17 weight % are contained, and it is preferable that R 2 O+RO are contained in an amount of 10 ⁇ 30 eight %, thereby, the strength of the glass substrate is greatly enhanced and the workability is significantly improved.
  • the opening diameters R1 and R2,the arrangement thereof and the thickness of the substrate can be properly selected depending on the sizes of the elements and wirings to be mounted or integrated.
  • the forming method thereof is not limited, if the same does not cause any large physical or chemical damage on the glass substrate. Any already known boring technology can be applied. For example, micro sand blasting method, chemical etching method, laser processing method and photosensitive processing method using photosensitive glass are enumerated. Regardless to the method used, it is important that the method used does not cause any physical or chemical damages such as chippings and cracks at the opening portions and the inside of the through holes as referred to the above.
  • the conductive portions of the present invention formed inside the through holes provided at the insulator substrate is not in particular limited, if such can electrically connect the metal wirings and the elements provided on the main and sub-main faces of the substrate, for example, a conductive material constituted of a conductive material, core forming material and glass can be used. Further, such is not in particular limited, if the same can electrically connect the circuit portions on both sides of the glass substrate and is properly selected according to the electrical conductivity, adhesiveness with the circumference materials and the forming method thereof. Further, the forming method thereof is not in particular limited.
  • a conductive layer of such as Cu can be formed on the walls of the through holes with spattering method and in view of adhesiveness with the surrounding materials Ti or Cr can be formed at the interface thereof. Further, after forming a thin film of such as Cu serving as a seed film with spattering method, the conductive layer can be formed with electrolytic plating method. Further, electroless plating method can also be used. Still further, a resin past containing a metal such as Ag can be buried inside the through holes.
  • the connecting portions of the present invention provided at portions other than the end portions of the electrodes are not in particular limited, if such are electrically connected with the upper metal wiring portions, after boring through holes at the organic insulator covering the electrodes with etching method, the connecting portions can be formed together with the upper wiring layers by plating.
  • the through holes can be formed with photo-mask method by using photosensitive organic insulator material such as photosensitive polyimide and BCB as the organic insulator.
  • the arrangement of the respective elements of the present invention is not in particular limited, however, it is necessary to design the arrangement of the respective elements in view of the performance reduction due to a parasitic capacity caused by coupling between the respective elements and an integration rate depending on the desired size of the electronic circuit component.
  • the electronic circuit component does not require much size reduction, it is necessary to reduce an influence between the respective elements by arranging the respective elements on the same plane or to enlarge the distance between the layers. Further, a provision of a grounded plane, namely, a grounded layer is another method.
  • the external electrodes for electrical connection with the externals are formed on the metal end portions, however, if necessary, such can be formed thereon.
  • the external electrode is a conductive body for electrically connecting with the substrate on which the electronic circuit component of the present invention and the semiconductors, and specifically, a ball shaped body of solder alloy containing tin, zinc and lead, silver, copper, gold or one coated by gold are used. Further, other than the above an alloy formed by combining one or more of such as molybdenum, nickel, copper, platinum and titanium or a terminal having multi layered structure can be used. Further, as the forming method thereof, any conventional methods such as a method of transfer printing the ball shaped electrodes by using masks and a method of pattern printing can be used.
  • FIG. 1 is a schematic cross sectional view representing first ⁇ fourth embodiments of the present invention
  • FIG. 2 is a schematic cross sectional view representing fifth embodiment of the present invention.
  • FIG. 3 is a schematic cross sectional view representing sixth embodiment of the present invention.
  • FIG. 4 is a view showing a capacitor element in the sixth embodiment of the present invention.
  • FIG. 5 is a circuit diagram of the electronic circuit component representing a seventh embodiment of the present invention.
  • FIG. 6 is a schematic cross sectional view of the seventh embodiment of the present invention.
  • FIG. 7 is an exploded view of the seventh embodiment of the present invention.
  • FIGS. 8 through 14 are plane pattern diagrams of respective layers in the seventh embodiment of the present invention.
  • FIG. 15 is a schematic cross sectional view representing eighth embodiment of the present invention.
  • FIG. 16 is a schematic cross sectional view representing ninth embodiment of the present invention.
  • FIG. 17 is a schematic cross sectional view representing tenth embodiment of the present invention.
  • FIG. 18 is a schematic cross sectional view representing eleventh embodiment of the present invention.
  • FIG. 19 is a schematic cross sectional view representing twelfth embodiment of the present invention.
  • FIG. 20 is a schematic cross sectional view representing thirteenth embodiment of the present invention.
  • FIG. 21 is a schematic cross sectional view representing fourteenth embodiment of the present invention.
  • FIG. 1 is a cross sectional view of an electronic circuit component representing one embodiment of the present invention.
  • 1 is a glass substrate (product of Nippon Electric Glass Co., Ltd.,BLC), and the thickness of which is 0.5 mm.
  • FIG. 1 is an organic insulator and photosensitive polyimide (product of Hitachi Chemical Co., Ltd., HD-6000) is used therefor.
  • a capacitor element 3 formed inside the organic insulator 2 is in a three layer structure constituted by a lower electrode 3 a , a dielectric body 3 b and an upper electrode 3 c .
  • the lower electrode 3 a is composed by Cu, the dielectric body 3 b by oxide of Ta and the upper electrode 3 c by Cu.
  • An inductor element 4 is a spiral type inductor and is formed on the same plane as the upper electrode 3 c of the capacitor element 3 and the material thereof is Cu.
  • a resistor 5 is constituted by a resistance body 5 b and electrodes 5 a and 5 c .
  • the resistance body 5 b is a compound of Ta and Ti and the electrodes 5 a and 5 c are composed of Cu.
  • 6 is a metal terminal portion used for connection with a mounting substrate such as a print substrate and in the drawing a solder ball 7 is mounted on the metal terminal portion 6 .
  • a Cr film of 50 nm was formed on a glass substrate of 0.5 mm thickness with spattering method and further, a Cu film of 500 nm was formed thereon, which was used for current feeding use seed film for Cu plating.
  • a resist mask was formed through exposure and development steps. At the resist opening portions electrolytic copper plating of 10 ⁇ m was performed with current density of 1 A/dm. Subsequently, the resist mask was removed and the copper seed film was removed with copper etching liquid Cobra etch (product of Ebara Densan). Further, by making use of Cr etching liquid of permanganic acid series Cr seed film was removed and the lower electrode was formed.
  • a Cr film of 50 nm is formed with spattering method.
  • Ta 2 O 5 film having thickness of 500 nm was formed on the lower electrode by spattering method.
  • 500 cp(product of Tokyo Ohka) was coated and after performing drying, exposing and developing process a resist mask for a dielectric layer was formed. Subsequently, dry etch was performed by making use of CF 4 to remove unnecessary portion thereof and further, unnecessary portion of the barrier layer was removed with Cr etching liquid of permanganic acid, then, the resist mask was removed and the dielectric layer was formed.
  • photosensitive polyimide HD 6000 product of Hitachi Chemical Co., Ltd.
  • photosensitive polyimide HD 6000 product of Hitachi Chemical Co., Ltd.
  • the polyimide having an opening is hardened at 250° C./2 hours under nitrogen atmosphere and the organic insulator of 10 ⁇ m was formed so that the polyimide covering portion comes inside by 80 ⁇ m from the scribe area used for cutting into pieces as the electronic circuit components.
  • a TaN film of 500 nm was formed with spattering method.
  • a resist pattern mask was formed through exposure and development. By using the mask The TaN film was dry etched with CF 4 . Then, a plurality of resistor elements were formed by peeling off the resist.
  • a Cr film of 50 nm was formed with spattering method and further, a Cu film of 500 nm was formed thereon, which was used as a seed film.
  • PMER-N-CA1000 product of Tokyo Ohka
  • a resist mask was formed through exposure and development steps. At the resist opening portions electrolytic copper plating of 10 ⁇ m was performed with current density of 1 A/dm. Subsequently, the resist mask was removed and the copper seed film was removed with copper etching liquid Cobra etch (product of Ebara Densan). Further, by making use of Cr etching liquid of permanganic acid series Cr seed film was removed and the upper electrode, electrodes for the resistors and the inductor were formed.
  • photosensitive polyimide HD 6000 product of Hitachi Chemical Co., Ltd.
  • the polyimide having an opening is hardened at 250° C./1 hour under nitrogen atmosphere and the organic insulator was formed so that the polyimide covering portion comes inside by 80 ⁇ m from the scribe area used for cutting into pieces as the electronic circuit components.
  • the electrolytic plating use seed films Cr:50 nm, Cu:500 nm were formed.
  • a resist mask for plating was formed through exposure and development, then a plating film of 10 ⁇ m was formed by Cu electrolytic plating and further, an electrolytic nickel plating film of 2 ⁇ m was formed.
  • the wirings and the metal terminal portions were formed.
  • photosensitive polyimide HD 6000 product of Hitachi Chemical Co., Ltd.
  • the polyimide having an opening is hardened at 250° C./1 hour under nitrogen atmosphere and the organic insulator was formed so that the polyimide covering portion comes inside by 80 ⁇ m from the scribe area used for cutting into pieces as the electronic circuit components.
  • the external electrodes were formed by arranging the lead free solder balls having a diameter of 200 ⁇ m and performing reflow processing.
  • the mounting area can be halved and the size thereof is further reduced. Further, since a glass having a high insulation property is used for the substrate, a possible efficiency reduction of the respective elements can be prevented and efficiency of about five times in comparison with ones using the conventional silicon substrate can be obtained. Still further, the manufacturing cost is also halved in comparison with the ones using the conventional silicon substrate.
  • the passive elements such as the capacitors, inductors and resistors at the inside from the end portion of the glass substrate, the structural portions where stresses concentratedly applied at the time of cutting out the electronic circuit components and at the time of mounting the same are designed to withstand the stresses and a possible damage on the electroniccircuit components due to the applied stresses can be greatly reduced, thereby, a highly reliable electronic circuit components of a desirable manufacturing yield can be obtained.
  • FIG. 1 structure is one embodiment of the present invention, and the arrangement of the respective elements is not limited to that shown.
  • the composition of the glass substrate of the present embodiment contains at least one rare earth element selected among the group including Sc, Y, La, Pr, Nd, Pm, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb and Lu in an amount of 0.5 ⁇ 20 weight % with respect to the entire glass components when converted based on oxide of Ln 2 O 3 (Ln is a rare earth element) and as the other components contains SiO 2 :40 ⁇ 80 weight %, B 2 O 3 :0 ⁇ 20 weight %, R 2 O (R 2 is alkali metal):0 ⁇ 20 weight %, RO (R is alkaline earth metal):0 ⁇ 20 weight % and Al 2 O 3 :0 ⁇ 17 weight %, and it is preferable that R 2 O+RO are contained in an amount of 10 ⁇ 30 weight %. Further, the thickness thereof was 0.5 mm like
  • the portions other than the glass substrate 1 in the present embodiment are the same as those in embodiment 1.
  • the bending resistances of the glass substrate (product of Nippon Electric Glass Co., Ltd.) used in embodiment 1 and of the glass substrate used in embodiment 2 were respectively 200 Mpa and 300 Mpa.
  • the bending resistances were the values measured with a four point bending meter and the shape of the samples was 10 mm ⁇ 36 mm ⁇ 0.5 mm.
  • the strength of the glass substrate used in embodiment 2 is about two times larger than that of the glass substrate in embodiment 1.
  • the electronic circuit component of embodiment 2 shows a high reliability such as in connection with impact resistance.
  • Such glass substrate containing at least one rare earth element selected among the group including Sc, Y, La, Pr, Nd, Pm, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb and Lu in an amount of 0.5 ⁇ 20 weight % with respect to the entire glass components when converted based on oxide of Ln 2 O 3 (Ln is a rare earth element) and as the other components contains SiO 2 :40 ⁇ 80 weight %, B 2 O 3 :0 ⁇ 20 weight %, R 2 O (R 2 is alkali metal):0 ⁇ 20 weight %, RO (R is alkaline earth metal):0 ⁇ 20 weight % and Al 2 O 3 :0 ⁇ 17 weight %, and it is preferable that R 2 O+RO are contained in an amount of 10 ⁇ 30 weight %, a further highly reliable electronic circuit component in addition to the advantages in embodiment 1 can be obtained.
  • Ln 2 O 3 Ln is a rare earth element
  • the portions other than the organic insulator 2 in the present embodiment are the same as those in embodiment 1.
  • the dielectric constant and dielectric loss tangent of BCB are respectively 2.65 and 0.003, which are respectively smaller than 3.5 and 0.01 of the photosensitive polyimide.
  • BCB as an insulator layer which covers the circumference of the electronic parts, the conductive loss and dielectric loss are reduced, thereby, loss of signals passing through the electronic parts can be reduced.
  • the electronic circuit component of course shows a high reliability such as in connection with impact resistance.
  • the low dielectric loss tangent resin composition as shown in the above chemical formula which includes a bridging component having a plurality of styrene groups as expressed by the following general chemical formula and contains polymers having average molecular weight of more than 5000 was used as the organic insulator 2 .
  • the portions other than the organic insulator 2 in the present embodiment are the same as those in embodiment 1.
  • the manufacturing method of the electronic circuit component of the present embodiment is the same as that of embodiment 1 except for the formation method of the low dielectric loss tangent resin composition which will be explained below.
  • the above low dielectric loss tangent resin composition was formed in the following manner. Three kinds of raw materials of synthesized 1,2-bis (vinyl phenyl) ethane of 30 weight parts, cyclic poly olefin (product of Nihon Zeon, Zeonex 480) of 70 weight parts and curing catalyst per hexyne 25B of 0.3 weight part were resolved in xylene solvent so as to assume the solid component to be of 38% to prepare a varnish.
  • the varnish was coated by spin coating and baked on a hot plate under 120° C./2 min, thereafter, a step curing under 200° C./5 min was performed to form the insulator of 10 ⁇ m.
  • a step curing under 200° C./5 min was performed to form the insulator of 10 ⁇ m.
  • 500 cp(product of Tokyo Ohka) was spin-coated and dried, thereafter, through exposing and developing process a resist mask having an opening portion was formed so that the end of the opening portion comes inside the end portion of the lower electrode by 20 ⁇ m.
  • the low dielectric loss tangent resin composition was dry etched by making use of CF 4 and the dielectric body above the lower electrode was exposed. Finally, the resist was peeled off.
  • the dielectric constant and dielectric loss tangent of the low dielectric loss tangent resin composition are respectively 2.45 and 0.0015, which are respectively smaller than 3.5 and 0.002 of the photosensitive polyimide and likely smaller than 2.65 and 0.003 of BCB.
  • the cost of the resin composition is 20000 yen/kg, which is inexpensive about ⁇ fraction (1/10) ⁇ in comparison with BCB, which is 230000 yen/kg.
  • the conductive loss and dielectric loss are reduced, thereby, loss of signals transmission through the electronic circuits can be reduced with the low cost material.
  • the electronic circuit component of course shows a high reliability such as in connection with impact resistance.
  • FIG. 2 is a cross sectional view of an electronic circuit component representing one embodiment of the present invention.
  • 1 is a glass substrate (product of Nippon Electric Glass Co., Ltd.,BLC), and the thickness of which is 0.5 mm.
  • 2 is an organic insulator and photosensitive polyimide (product of Hitachi Chemical Co., Ltd., HD-6000) is used therefor.
  • Capacitor elements formed inside the organic insulator 2 are constituted by a capacitor 3 in a three layer structure constituted by a lower electrode 3 a of Cu, a dielectric body 3 b of oxide of Ta and an upper electrode 3 c of Cu and a capacitor 3 ′ in a three layer structure constituted by a lower electrode 3 ′ a of Cu, a dielectric body 3 ′ b of polyimide and an upper electrode 3 ′ c of Cu.
  • An inductor element 4 is a spiral type inductor and is formed of Cu.
  • a resistor 5 is constituted by a resistance body 5 b and electrodes 5 a and 5 c .
  • the resistance body 5 b is a compound of Ta and Ti and the electrodes 5 a and 5 c are composed of Cu.
  • 6 is a metal terminal portion used for connection with a mounting substrate such as a print substrate and in the drawing a solder ball 7 is mounted on the metal terminal portion 6 .
  • a sand blast use film resist material(product of Tokyo Ohka, Odale)of 100 ⁇ m was laminated on the glass substrate having thickness of 0.5 mm through exposure and development process and an etching use resist was formed. Subsequently, through holes were formed in the glass substrate with micro sand blasting method. Then, the resist film was peeled off, electrolytic plating use seed films Cr:50 nm, Cu:500 nm were formed on the surface of the glass substrate and walls of the via holes with spattering method.
  • a plating use film resist (product of Hitachi Chemical Co., Ltd., HN 920) was laminated and a resist mask was formed through exposure and development, then, conductive layers were formed inside the via holes by Cu electrolytic plating . Subsequently, the resist and the electrolytic plating seed film were peeled off.
  • a Cr film of 50 nm was formed on a glass substrate of 0.5 mm thickness with spattering method and further, a Cu film of 500 nm was formed thereon, which was used for current feeding use seed film for Cu plating.
  • a Cu film negative type liquid state resist PMER-N-CA1000 product of Tokyo Ohka
  • a resist mask was formed through exposure and development steps. At the resist opening portions electrolytic copper plating of 10 ⁇ m was performed with current density of 1 A/dm. Subsequently, the resist mask was removed and the copper seed film was removed with copper etching liquid Cobra etch (product of Ebara Densan). Further, by making use of Cr etching liquid of permanganic acid series Cr seed film was removed and the lower electrode was formed.
  • a Cr film of 50 nm is formed with spattering method.
  • Ta 2 O 5 film having thickness of 500 nm was formed on the lower electrode 3 a by spattering method.
  • 500 cp(product of Tokyo Ohka) was coated and after performing drying, exposing and developing process a resist mask for a dielectric layer was formed.
  • a dry etch was performed by making use of CF 4 to remove unnecessary portion thereof and further, unnecessary portion of the barrier layer was removed with Cr etching liquid of permanganic acid, then, the resist mask was removed and the dielectric layer was formed.
  • photosensitive polyimide HD 6000 product of Hitachi Chemical Co., Ltd.
  • photosensitive polyimide HD 6000 product of Hitachi Chemical Co., Ltd.
  • the dielectric layer over the lower electrode 3a was exposed.
  • the polyimide having an opening is hardened at 250° C./2 hours under nitrogen atmosphere and the organic insulator of 10 ⁇ m was formed so that the polyimide covering portion comes inside by 80 ⁇ m from the scribe area used for cutting into pieces as the electronic circuit components.
  • the organic insulator formed above the lower electrode 3 ′ a according to the above process is the dielectric body 3 ′ b.
  • a TaN film of 500 nm was formed with spattering method.
  • a resist pattern mask was formed through exposure and development. By using the mask The TaN film was dry etched with CF 4 . Then plural resistor elements were formed by peeling off the resist.
  • a Cr film of 50 nm was formed with spattering method and further, a Cu film of 500 nm was formed thereon, which was used as a seed film.
  • PMER-N-CA1000 product of Tokyo Ohka
  • a resist mask was formed through exposure and development steps. At the resist opening portions electrolytic copper plating of 10 ⁇ m was performed with current density of 1 A/dm. Subsequently, the resist mask was removed and the copper seed film was removed with copper etching liquid Cobra etch (product of Ebara Densan). Further, by making use of Cr etching liquid of permanganic acid series Cr seed film was removed and the upper electrode, electrodes for the resistors and the inductor were formed.
  • photosensitive polyimide HD 6000 product of Hitachi Chemical Co., Ltd.
  • the polyimide having an opening is hardened at 250° C./1 hour under nitrogen atmosphere and the organic insulator was formed so that the polyimide covering portion comes inside by 80 ⁇ m from the scribe area used for cutting into pieces as the electronic circuit components.
  • the electrolytic plating use seed films Cr:50 nm, Cu:500 nm were formed.
  • a resist mask for plating was formed through exposure and development, then, a plating film of 10 ⁇ m was formed by Cu electrolytic plating and further, an electrolytic nickel plating film of 2 ⁇ m was formed. Finally, after peeling off the resist and the electrolytic plating seed film, the wirings and the metal terminal portions were formed.
  • photosensitive polyimide HD 6000 product of Hitachi Chemical Co., Ltd.
  • the polyimide having an opening is hardened at 250° C./1 hour and the organic insulator was formed so that the polyimide covering portion comes inside by 80 ⁇ m from the scribe area used for cutting into pieces as the electronic circuit components.
  • the external electrodes were formed by arranging the lead free solder balls having a diameter of 200 ⁇ m and performing reflow processing.
  • capacitors having a small capacitance can be formed accurately, which enhances reliability of the circuits and expands available capacitance range.
  • the semiconductor connection substrate can be manufactured in further simplified and low cost processes in addition to the advantages obtained in embodiment 1.
  • the electronic circuit component of course shows a high reliability such as in connection with impact resistance.
  • the conductive loss and dielectric loss are reduced, thereby, loss of signals transmitting through the electronic circuits can be reduced with the low cost material.
  • FIG. 2 structure is one embodiment of the present invention, and the arrangement of the respective elements is not limited to that shown.
  • FIG. 3 is a cross sectional view of a semiconductor connection substrate representing one embodiment of the present invention.
  • 1 is a glass substrate (product of Nippon Electric Glass Co., Ltd.,BLC), and the thickness of which is 0.5 mm.
  • 2 is an organic insulator and photosensitive polyimide (product of Hitachi Chemical Co., Ltd., HD-6000) is used therefor.
  • Capacitor elements formed inside the organic insulator 2 are constituted by a capacitor 3 in a three layer structure constituted by a lower electrode 3 a of Cu, a dielectric body 3 b of oxide of Ta and an upper electrode 3 c of Cu and a capacitor 3 ′ in a three layer structure constituted by a lower electrode 3 ′ a of Cu, a dielectric body 3 ′ b of polyimide and an upper electrode 3 ′ c of Cu. Further, on the upper electrodes connecting portions 8 for connecting the same with wirings on the upper layer are provided.
  • An inductor element 4 is a spiral type inductor and is formed of Cu.
  • a resistor 5 is constituted by a resistance body 5 b and electrodes 5 a and 5 c .
  • the resistance body 5 b is a compound of Ta and Ti and the electrodes 5 a and 5 c are composed of Cu.
  • 6 is a metal terminal portion used for connection with a mounting substrate such as a print substrate and in the drawing a solder ball 7 is mounted on the metal terminal portion 6 .
  • FIG. 4 shows parts of the capacitor element in FIG. 3.
  • the dielectric body 3 b is formed so as to cover the side faces of the lower electrode 3 c and a reduction of defects due to current leakage between the upper and lower electrodes is achieved. Since the area of the upper electrode is formed smaller than that of the lower electrode, the capacitance of the capacitor is determined based on the area of the upper electrode. For the connection between the upper electrode 3 c and the wirings on the upper layer, as shown in FIG. 4, from a portion other than the end portion of the upper electrode 3 c a wiring is lead out through a via hole in the organic insulator 2 to the upper layer to complete the connection.
  • the connecting portions 8 when the connection is performed by leading out the wiring from the side face of the upper electrode, the area of the led out portion of the wiring facing the lower electrode operates to form a part of the capacitance, therefore, when forming the capacitor, a high level of accuracy is required.
  • the connecting portions 8 when the connecting portions 8 are used, the connecting portions do not affect the capacitance of the capacitor, thus, a highly accurate capacitor can be formed.
  • a sand blast use film resist material(product of Tokyo Ohka, Odale)of 100 ⁇ m was laminated on the glass substrate having thickness of 0.5 mm through exposure and development process and an etching use resist was formed. Subsequently, through holes were formed in the glass substrate with micro sand blasting method. Then, the resist film was peeled off, electrolytic plating use seed films Cr:50 nm, Cu:500 nm were formed on the surface of the glass substrate and walls of the via holes with spattering method.
  • a plating use film resist (product of Hitachi Chemical Co., Ltd., HN 920) was laminated and a resist mask was formed through exposure and development, then, conductive layers were formed inside the via holes by Cu electrolytic plating. Subsequently, the resist and the electrolytic plating seed film were peeled off.
  • a Cr film of 50 nm was formed on a glass substrate of 0.5 mm thickness with spattering method and further, a Cu film of 500 nm was formed thereon, which was used for current feeding use seed film for Cu plating.
  • a resist mask was formed through exposure and development steps. At the resist opening portions electrolytic copper plating of 10 ⁇ m was performed with current density of 1 A/dm. Subsequently, the resist mask was removed and the copper seed film was removed with copper etching liquid Cobra etch (product of Ebara Densan). Further, by making use of Cr etching liquid of permanganic acid series Cr seed film was removed and the lower electrode was formed.
  • a Cr film of 50 nm is formed with spattering method.
  • Ta 2 O 5 film having thickness of 500 nm was formed on the lower electrode by spattering method.
  • 500 cp(product of Tokyo Ohka) was coated and after performing drying, exposing and developing process a resist mask for a dielectric layer was formed.
  • a dry etch was performed by making use of CF 4 to remove unnecessary portion thereof and further, unnecessary portion of the barrier layer was removed with Cr etching liquid of permanganic acid, then, the resist mask was removed and the dielectric layer was formed.
  • photosensitive polyimide HD 6000 product of Hitachi Chemical Co., Ltd.
  • photosensitive polyimide HD 6000 product of Hitachi Chemical Co., Ltd.
  • the polyimide layer was opened so that the end portion of the opening was located at the inner side from the end of the lower electrode by 20 ⁇ m.
  • the polyimide is hardened at 250° C./2 hours under nitrogen atmosphere to form the organic insulator of 10 ⁇ m.
  • a Cr film of 50 nm was formed with spattering method and further, a Cu film of 500 nm was formed thereon, which was used as a seed film.
  • PMER-N-CA1000 product of Tokyo Ohka
  • a resist mask was formed through exposure and development steps. At the resist opening portions electrolytic copper plating of 10 ⁇ m was performed with current density of 1 A/dm. Subsequently, the resist mask was removed and the copper seed film was removed with copper etching liquid Cobra etch (product of Ebara Densan). Further, by making use of Cr etching liquid of permanganic acid series Cr seed film was removed and the upper electrodes were formed.
  • photosensitive polyimide HD 6000 product of Hitachi Chemical Co., Ltd.
  • photosensitive polyimide HD 6000 product of Hitachi Chemical Co., Ltd.
  • a TaN film of 500 nm was formed with spattering method.
  • a resist pattern mask was formed through exposure and development. By using the mask The TaN film was dry etched with CF 4 . Then, a plurality of resistor elements were formed by peeling off the resist.
  • a Cr film of 50 nm was formed with spattering method and further, a Cu film of 500 nm was formed thereon, which was used as a seed film.
  • PMER-N-CA1000 product of Tokyo Ohka
  • a resist mask was formed through exposure and development steps. At the resist opening portions electrolytic copper plating of 10 ⁇ m was performed with current density of 1 A/dm. Subsequently, the resist mask was removed and the copper seed film was removed with copper etching liquid Cobra etch (product of Ebara Densan). Further, by making use of Cr etching liquid of permanganic acid series Cr seed film was removed and the electrodes for the resistors were formed.
  • photosensitive polyimide HD 6000 product of Hitachi Chemical Co., Ltd.
  • photosensitive polyimide HD 6000 product of Hitachi Chemical Co., Ltd.
  • a Cr film of 50 nm was formed with spattering method and further, a Cu film of 500 nm was formed thereon, which was used as a seed film.
  • PMER-N-CA1000 product of Tokyo Ohka
  • a resist mask was formed through exposure and development steps. At the resist opening portions electrolytic copper plating of 10 ⁇ m was performed with current density of 1 A/dm. Subsequently, the resist mask was removed and the copper seed film was removed with copper etching liquid Cobra etch (product of Ebara Densan). Further, by making use of Cr etching liquid of permanganic acid series Cr seed film was removed and the inductor elements, wirings and metal terminal portions were formed.
  • photosensitive polyimide HD 6000 product of Hitachi Chemical Co., Ltd.
  • photosensitive polyimide HD 6000 product of Hitachi Chemical Co., Ltd.
  • the external electrodes were formed by arranging the lead free solder balls having a diameter of 200 ⁇ m and performing reflow processing.
  • the capacitor elements, inductor elements and resistor elements are respectively arranged at a plurality of different distances from the surface of the glass substrate, the respective elements can be integrated in further high density, therefore, a further small sized electronic circuit component can be obtained in addition to the advantages obtained in embodiment 5.
  • the electronic circuit component of course shows a high reliability such as in connection with impact resistance.
  • the conductive loss and dielectric loss are reduced, thereby, loss of signals transmitting through the electronic circuits can be reduced with the low cost material.
  • FIG. 3 structure is one embodiment of the present invention, and the arrangement of the respective elements is not limited to that shown.
  • FIG. 6 is a cross sectional view of the electronic circuit component representing an embodiment of the present invention.
  • FIG. 7 is an exploded view of the electronic circuit component according to the present embodiment.
  • FIGS. 8 through 14 are plane views of the respective layers as shown in the exploded view of FIG. 7.
  • the cross sectional view in FIG. 6 shows one being taken along the dotted line A-A′ in FIGS. 8 through 14.
  • 26 is a glass substrate (product of Nihon Denki Glass, BLC) and of which thickness was 0.5 mm and size was 2 mm ⁇ 2 mm.
  • 27 is a lower electrode layer made of Cu and of which plane view is shown in FIG. 8.
  • 28 is a dielectric body layer made of oxide of Ta and of which plane view is shown in FIG. 9.
  • 29 is an organic insulator layer and of which plane view is shown in FIG. 10.
  • 30 is a layer serving as an inductor layer and an upper electrode and of which plane view is shown in FIG. 11.
  • 31 is another organic insulator and of which plane view is shown in FIG. 12.
  • 32 is an electrode layer for connecting between a wiring and an external terminal and of which plane view is shown in FIG. 13.
  • 33 is a surface protective layer made of an organic insulator a nd of which plane view is shown in FIG. 14.
  • 34 is an external electrode for a solder ball.
  • the lower electrode 27 made of Cu, the layer 30 serving as the inductor layer and the upper electrode and the electrode layer 32 connecting the wiring and the external terminal are connected through via holes formed in the organic insulator layers 29 and 31 provided in the respective interlayers.
  • a Cr film of 50 nm was formed on a glass substrate 26 of 0.5 mm thickness with spattering method and further, a Cu film of 500 nm was formed thereon, which was used for current feeding use seed film for Cu plating.
  • a resist mask was formed through exposure and development steps. At the resist opening portions electrolytic copper plating of 10 ⁇ m was performed with current density of 1 A/dm. Subsequently, the resist mask was removed and the copper seed film was removed with copper etching liquid Cobra etch (product of Ebara Densan). Further, by making use of Cr etching liquid of permanganic acid series Cr seed film was removed and the lower electrode 27 was formed.
  • the lower electrode layer 27 serves as a lower electrode and a wiring for a capacitor element.
  • a Cr film of 50 nm is formed with spattering method.
  • Ta 2 O 5 film having thickness of 500 nm was formed on the lower electrode by spattering method.
  • 500 cp(product of Tokyo Ohka) was coated and after performing drying, exposing and developing process a resist mask for a dielectric layer was formed.
  • a dry etch was performed by making use of CF 4 to remove unnecessary portion thereof and further, unnecessary portion of the barrier layer was removed with Cr etching liquid of permanganic acid, then, the resist mask was removed and the dielectric layer 28 was formed. In this instance, the dielectric layer 28 was formed so as to cover the side face of the lower electrode.
  • photosensitive polyimide HD 6000 product of Hitachi Chemical Co., Ltd.
  • photosensitive polyimide HD 6000 product of Hitachi Chemical Co., Ltd.
  • the polyimide layer was opened so that the end portion of the opening was located at the inner side from the end of the lower electrode by 20 ⁇ m.
  • the polyimide is hardened at 250° C./2 hours under nitrogen atmosphere to form the organic insulator layer 29 of 10 ⁇ m. Further, in the organic insulator layer 29 via holes are formed for connecting the lower electrode layer 27 and a wiring on the upper layer thereof.
  • a Cr film of 50 nm was formed with spattering method and further, a Cu film of 500 nm was formed thereon, which was used as a seed film.
  • a resist mask was formed through exposure and development steps. At the resist opening portions electrolytic copper plating of 10 ⁇ m was performed with current density of 1 A/dm. Subsequently, the resist mask was removed and the copper seed film was removed with copper etching liquid Cobra etch (product of Ebara Densan).
  • photosensitive polyimide HD 6000 product of Hitachi Chemical Co., Ltd.
  • the opening portion for interlayer connection between the upper electrode and the upper layer thereof is formed so as to locate in the face where the upper electrode is formed, the area of the upper electrode for the capacitor element can be easily controlled, which enhances accuracy of the capacitor element.
  • a Cr film of 50 nm was formed with spattering method and further, a Cu film of 500 nm was formed thereon, which was used as a seed film.
  • PMER-N-CA1000 product of Tokyo Ohka
  • a resist mask was formed through exposure and development steps. At the resist opening portions electrolytic copper plating of 10 ⁇ m was performed with current density of 1 A/dm. Subsequently, the resist mask was removed and the copper seed film was removed with copper etching liquid Cobra etch (product of Ebara Densan). Further, by making use of Cr etching liquid of permanganic acid series Cr seed film was removed and the wirings and external electrode layer 32 were formed.
  • photosensitive polyimide HD 6000 product of Hitachi Chemical Co., Ltd.
  • photosensitive polyimide HD 6000 product of Hitachi Chemical Co., Ltd.
  • the external electrodes 34 were formed by arranging the lead free solder balls having a diameter of 200 ⁇ m and performing reflow processing.
  • the external electrode 34 is arranged in a grid shape as shown in FIG. 7 so as to ease mounting such as on an external wiring substrate.
  • the LC filter circuit which was conventionally formed as a single discrete component is integrated on a substrate, the size, resistance, inductance and noise of the electronic circuit component can be realized.
  • the electronic circuit component of course shows a high reliability such as in connection with impact resistance.
  • the conductive loss and dielectric loss are reduced, thereby, loss of signals transmitting through the electronic circuits can be reduced with the low cost material.
  • FIG. 5 structure is one embodiment of the present invention, and the arrangement of the respective elements is not limited to that shown.
  • FIG. 15 is a cross sectional view of an electronic circuit component representing one embodiment of the present invention.
  • 1 is a glass substrate (product of Nippon Electric Glass Co., Ltd.,BLC), and the thickness of which is 0.5 mm.
  • 2 is an organic insulator and photosensitive polyimide (product of Hitachi Chemical Co., Ltd., HD-6000) is used therefor.
  • Capacitor elements formed inside the organic insulator 2 are constituted by a capacitor 3 in a three layer structure constituted by a lower electrode 3 a of Cu, a dielectric body 3 b of oxide of Ta and an upper electrode 3 c of Cu and a capacitor 3 ′ in a three layer structure constituted by a lower electrode 3 ′ a of Cu, a dielectric body 3 ′ b of polyimide and an upper electrode 3 ′ c of Cu.
  • connecting portions 8 for connecting the same with the upper wirings are provided on the upper electrodes.
  • An inductor element 4 is a spiral type inductor and is formed of Cu.
  • a resistor 5 is constituted by a resistance body 5 b and electrodes 5 a and 5 c .
  • the resistance body 5 b is a compound of Ta and Ti and the electrodes 5 a and 5 c are composed of Cu.
  • 9 is an organic insulator having a function of buffering stress.
  • a liquid polyimide material in which polyimide fine particles are dispersed product of Hitachi Chemical Co., Ltd., GH-P500 was used.
  • 6 is a metal terminal portion used for connection with a mounting substrate such as a print substrate and in the drawing a solder ball 7 is mounted on the metal terminal portion 6 .
  • a Cr film of 50 nm was formed on a glass substrate of 0.5 mm thickness with spattering method and further, a Cu film of 500 nm was formed thereon, which was used for current feeding use seed film for Cu plating.
  • a resist mask was formed through exposure and development steps. At the resist opening portions electrolytic copper plating of 10 ⁇ m was performed with current density of 1 A/dm. Subsequently, the resist mask was removed and the copper seed film was removed with copper etching liquid Cobra etch (product of Ebara Densan). Further, by making use of Cr etching liquid of permanganic acid series Cr seed film was removed and the lower electrode was formed.
  • a Cr film of 50 nm is formed with spattering method.
  • Ta 2 O 5 film having thickness of 500 nm was formed on the lower electrode by spattering method.
  • 500 cp(product of Tokyo Ohka) was coated and after performing drying, exposing and developing process a resist mask for a dielectric layer was formed.
  • a dry etch was performed by making use of CF 4 to remove unnecessary portion thereof and further, unnecessary portion of the barrier layer was removed with Cr etching liquid of permanganic acid, then, the resist mask was removed and the dielectric layer was formed.
  • photosensitive polyimide HD 6000 product of Hitachi Chemical Co., Ltd.
  • photosensitive polyimide HD 6000 product of Hitachi Chemical Co., Ltd.
  • the polyimide layer was opened so that the end portion of the opening was located at the inner side from the end of the lower electrode by 20 ⁇ m.
  • the polyimide is hardened at 250° C./2 hours under nitrogen atmosphere to form the organic insulator of 10 ⁇ m.
  • a Cr film of 50 nm was formed with spattering method and further, a Cu film of 500 nm was formed thereon, which was used as a seed film.
  • PMER-N-CA1000 product of Tokyo Ohka
  • a resist mask was formed through exposure and development steps. At the resist opening portions electrolytic copper plating of 10 ⁇ m was performed with current density of 1 A/dm. Subsequently, the resist mask was removed and the copper seed film was removed with copper etching liquid Cobra etch (product of Ebara Densan). Further, by making use of Cr etching liquid of permanganic acid series Cr seed film was removed and the upper electrodes were formed.
  • photosensitive polyimide HD 6000 product of Hitachi Chemical Co., Ltd.
  • photosensitive polyimide HD 6000 product of Hitachi Chemical Co., Ltd.
  • a TaN film of 500 nm was formed with spattering method.
  • positive type liquid state resist OFPR800, 100 cp was spin-coated and prebaked, thereafter, a resist pattern mask was formed through exposure and development. By using the mask The TaN film was dry etched with CF 4 . Then, a plurality of resistor elements were formed by peeling off the resist.
  • a Cr film of 50 nm was formed with spattering method and further, a Cu film of 500 nm was formed thereon, which was used as a seed film.
  • PMER-N-CA1000 product of Tokyo Ohka
  • a resist mask was formed through exposure and development steps. At the resist opening portions electrolytic copper plating of 10 ⁇ m was performed with current density of 1 A/dm. Subsequently, the resist mask was removed and the copper seed film was removed with copper etching liquid Cobra etch (product of Ebara Densan). Further, by making use of Cr etching liquid of permanganic acid series Cr seed film was removed and the electrodes for the resistors were formed.
  • photosensitive polyimide HD 6000 product of Hitachi Chemical Co., Ltd.
  • photosensitive polyimide HD 6000 product of Hitachi Chemical Co., Ltd.
  • a Cr film of 50 nm was formed with spattering method and further, a Cu film of 500 nm was formed thereon, which was used as a seed film.
  • PMER-N-CA1000 product of Tokyo Ohka
  • a resist mask was formed through exposure and development steps. At the resist opening portions electrolytic copper plating of 10 ⁇ m was performed with current density of 1 A/dm. Subsequently, the resist mask was removed and the copper seed film was removed with copper etching liquid Cobra etch (product of Ebara Densan). Further, by making use of Cr etching liquid of permanganic acid series Cr seed film was removed and the inductor elements and wirings were formed.
  • liquid polyimide material GH-P 500 in which polyimide fine particles are dispersed (product of Hitachi Chemical Co., Ltd.) was print coated by using a mask, heated on a hot plate at 200° C./25 min and hardened in a constant temperature bath at 250° C./60 min to form the organic insulator having stress buffering function.
  • a Cr film of 50 nm was formed with spattering method and further, a Cu film of 500 nm was formed thereon, which was used as a seed film.
  • PMER-N-CA1000 product of Tokyo Ohka
  • a resist mask was formed through exposure and development steps. At the resist opening portions electrolytic copper plating of 10 ⁇ m was performed with current density of 1 A/dm. Subsequently, the resist mask was removed and the copper seed film was removed with copper etching liquid Cobra etch (product of Ebara Densan). Further, by making use of Cr etching liquid of permanganic acid series Cr seed film was removed and the wirings and metal end portions were formed.
  • photosensitive polyimide HD 6000 product of Hitachi Chemical Co., Ltd.
  • photosensitive polyimide HD 6000 product of Hitachi Chemical Co., Ltd.
  • the external electrodes were formed by arranging the lead free solder balls having a diameter of 200 ⁇ m and performing reflow processing.
  • the organic insulator having stress buffering function is formed immediately below the metal terminal portion 6 , when being connected to a mounting substrate such as a print substrate, a thermal stress applied to the metal terminal portion 6 and the solder ball 7 due to difference of thermal expansion coefficients between the semiconductor connection substrate and the mounting substrate can be relaxed. Thereby, a semiconductor connection substrate having excellent heart resistance cycle can be obtained in addition to the advantages obtained in embodiment 6.
  • the electronic circuit component of course shows a high reliability such as in connection with impact resistance.
  • the conductive loss and dielectric loss are reduced, thereby, loss of signals transmitting through the electronic circuits can be reduced with the low cost material.
  • FIG. 15 structure is one embodiment of the present invention, and the arrangement of the respective elements is not limited to that shown.
  • FIG. 16 is a cross sectional view of an electronic circuit component representing one embodiment of the present invention.
  • 1 is a glass substrate (product of Nippon Electric Glass Co., Ltd.,BLC), and the thickness of which is 0.5 mm.
  • FIG. 16 2 is an organic insulator and photosensitive polyimide (product of Hitachi Chemical Co., Ltd.,HD-6000) is used therefor.
  • All of capacitor elements 3 formed inside the organic insulator 2 are in a three layer structure constituted by a lower electrode 3 a , a dielectric body 3 b and an upper electrode 3 c .
  • the lower electrode 3 a is constituted of Cu, the dielectric body 3 b of oxide of Ta and the upper electrode 3 c of Cu.
  • An inductor element 4 is a spiral type inductor and is formed on the same plane as the upper electrode 3 c of the capacitor element 3 and the material thereof is Cu.
  • a resistor 5 is constituted by a resistance body 5 b and electrodes 5 a and 5 c .
  • the resistance body 5 b is a compound of Ta and Ti and the electrodes 5 a and 5 c are composed of Cu.
  • 12 is another insulator using photosensitive polyimide (product of Hitachi Chemical Co., Ltd., HD-6000).
  • All of capacitor elements 13 formed inside the organic insulator 12 are in a three layer structure constituted by a lower electrode 13 a , a dielectric body 13 b and an upper electrode 13 c .
  • the lower electrode 13 a is constituted of Cu, the dielectric body 13 b of oxide of Ta and the upper electrode 13 c of Cu.
  • An inductor element 14 is a spiral type inductor and is formed on the same plane as the upper electrode 13 c of the capacitor element 13 and the material thereof is Cu.
  • a resistor 15 is constituted by a resistance body 15 b and electrodes 15 a and 15 c .
  • the resistance body 15 b is a compound of Ta and Ti and the electrodes 15 a and 15 c are composed of Cu.
  • the respective elements formed inside the organic insulators 2 and 12 are electrically connected via conductor portions filled in through holes 20 formed in the glass substrate so as to provide a predetermined functions.
  • 6 is a metal terminal portion used for connection with a mounting substrate such as a print substrate and in the drawing a solder ball 7 is mounted on the metal terminal portion 6 .
  • a sand blast use film resist material(product of Tokyo Ohka, Odale)of 100 ⁇ m was laminated on the glass substrate having thickness of 0.5 mm through exposure and development process and an etching use resist was formed. Subsequently, through holes were formed in the glass substrate with micro sand blasting method. Then, the resist film was peeled off, electrolytic plating use seed films Cr: 50 nm, Cu: 500 nm were formed on the surface of the glass substrate and walls of the via-holes with spattering method.
  • a plating use film resist product of Hitachi Chemical Co., Ltd., HN 920
  • a resist mask was formed through exposure and development, then, conductive layers were formed inside the via holes by Cu electrolytic plating. Subsequently, the resist and the electrolytic plating seed film were peeled off.
  • a Cr film of 50 nm was formed on the main surface of a glass substrate spattering method and further, a Cu film of 500 nm was formed thereon, which was used for current feeding use seed film for Cu plating.
  • a Cu film negative type liquid state resist PMER-N-CA1000 product of Tokyo Ohka
  • a resist mask was formed through exposure and development steps. At the resist opening portions electrolytic copper plating of 10 ⁇ m was performed with current density of 1 A/dm. Subsequently, the resist mask was removed and the copper seed film was removed with copper etching liquid Cobra etch (product of Ebara Densan). Further, by making use of Cr etching liquid of permanganic acid series Cr seed film was removed and the lower electrode was formed.
  • a Cr film of 50 nm is formed with spattering method.
  • Ta 2 O 5 film having thickness of 500 nm was formed on the lower electrode by spattering method.
  • 500 cp(product of Tokyo Ohka) was coated and after performing drying, exposing and developing process a resist mask for a dielectric layer was formed. Subsequently, dry etch was performed by making use of CF 4 to remove unnecessary portion thereof and further, unnecessary portion of the barrier layer was removed with Cr etching liquid of permanganic acid, then, the resist mask was removed and the dielectric layer was formed.
  • photosensitive polyimide HD 6000 product of Hitachi Chemical Co., Ltd.
  • photosensitive polyimide HD 6000 product of Hitachi Chemical Co., Ltd.
  • a hot plate through exposing and developing process the dielectric layer over the lower electrode was exposed.
  • a covering portion of the polyimide was opened inside from the scribe area by 80 ⁇ m used for cutting into pieces as the electronic circuit components.
  • the ployimide was hardened at 250° C./2 hours under nitrogen atmosphere to form the organic insulator of 10 ⁇ m.
  • a TaN film of 500 nm was formed with spattering method.
  • 100 cp was spin-coated and prebaked, thereafter, a resist pattern mask was formed through exposure and development. By using the mask The TaN film was dry etched with CF 4 . Then, a plurality of resistor elements were formed by peeling off the resist.
  • a Cr film of 50 nm was formed with spattering method and further, a Cu film of 500 nm was formed thereon, which was used as a seed film.
  • PMER-N-CA1000 product of Tokyo Ohka
  • a resist mask was formed through exposure and development steps. At the resist opening portions electrolytic copper plating of 10 ⁇ m was performed with current density of 1 A/dm. Subsequently, the resist mask was removed and the copper seed film was removed with copper etching liquid Cobra etch (product of Ebara Densan). Further, by making use of Cr etching liquid of permanganic acid series Cr seed film was removed and the upper electrode, electrodes for the resistors and the inductor element were formed.
  • photosensitive polyimide HD 6000 product of Hitachi Chemical Co., Ltd.
  • the polyimide covering portion was opened so that the polyimide covering portion comes inside by 80 ⁇ m from the scribe area used for cutting into pieces as the semiconductor connection substrates.
  • the polyimide having the opening was hardened at 250° C./1 hour under nitrogen atmosphere and the organic insulator was formed.
  • a Cr film of 50 nm was formed on the back surface of the glass substrate with spattering method and further, a Cu film of 500 nm was formed thereon, which was used for current feeding use seed film for Cu plating.
  • a resist mask was formed through exposure and development steps. At the resist opening portions electrolytic copper plating of 10 ⁇ m was performed with current density of 1 A/dm. Subsequently, the resist mask was removed and the copper seed film was removed with copper etching liquid Cobra etch (product of Ebara Densan). Further, by making use of Cr etching liquid of permanganic acid series Cr seed film was removed and the lower electrode was formed.
  • a Cr film of 50 nm is formed with spattering method.
  • Ta 2 O 5 film having thickness of 500 nm was formed on the lower electrode by spattering method.
  • 500 cp(product of Tokyo Ohka) was coated and after performing drying, exposing and developing process a resist mask for a dielectric layer was formed. Subsequently, dry etch was performed by making use of CF 4 to remove unnecessary portion thereof and further, unnecessary portion of the barrier layer was removed with Cr etching liquid of permanganic acid, then, the resist mask was removed and the dielectric layer was formed.
  • photosensitive polyimide HD 6000 product of Hitachi Chemical Co., Ltd.
  • photosensitive polyimide HD 6000 product of Hitachi Chemical Co., Ltd.
  • the polyimide having an opening is hardened at 250° C./2 hours under nitrogen atmosphere and the organic insulator of 10 ⁇ m was formed so that the polyimide covering portion comes inside by 80 ⁇ m from the scribe area used for cutting into pieces as the electronic circuit components.
  • a TaN film of 500 nm was formed with spattering method.
  • 100 cp was spin-coated and prebaked, thereafter, a resist pattern mask was formed through exposure and development. By using the mask The TaN film was dry etched with CF 4 Then, a plurality of resistor elements were formed by peeling off the resist.
  • a Cr film of 50 nm was formed with spattering method and further, a Cu film of 500 nm was formed thereon, which was used as a seed film.
  • PMER-N-CA1000 product of Tokyo Ohka
  • a resist mask was formed through exposure and development steps. At the resist opening portions electrolytic copper plating of 10 ⁇ m was performed with current density of 1 A/dm. Subsequently, the resist mask was removed and the copper seed film was removed with copper etching liquid Cobra etch (product of Ebara Densan). Further, by making use of Cr etching liquid of permanganic acid series Cr seed film was removed and the upper electrode, electrodes for the resistors and the inductor element were formed.
  • photosensitive polyimide HD 6000 product of Hitachi Chemical Co., Ltd.
  • the polyimide having an opening is hardened at 250° C./1 hour under nitrogen atmosphere and the organic insulator was formed so that the polyimide covering portion comes inside by 80 ⁇ m from the scribe area used for cutting into pieces as the electronic circuit components.
  • the electrolytic plating use seed films Cr:50 nm, Cu:500 nm were formed.
  • a resist mask for plating was formed through exposure and development then, a plating film of 10 ⁇ m was formed by Cu electrolytic plating and further, an electrolytic nickel plating film of 2 ⁇ m was formed. Finally, after peeling off the resist and the electrolytic plating seed film, the wirings and the metal terminal portions were formed.
  • photosensitive polyimide HD 6000 product of Hitachi Chemical Co., Ltd.
  • the polyimide having an opening is hardened at 250° C./1 hour under nitrogen atmosphere and the organic insulator was formed so that the polyimide covering portion comes inside by 80 ⁇ m from the scribe area used for cutting into pieces as the semiconductor connection substrates.
  • the external electrodes were formed by arranging the lead free solder balls having a diameter of 200 ⁇ m and performing reflow processing.
  • the electronic circuit component of course shows a high reliability such as in connection with impact resistance.
  • the conductive loss and dielectric loss are reduced, thereby, loss of signals transmitting through the electronic circuits can be reduced with the low cost material.
  • FIG. 16 structure is one embodiment of the present invention, and the arrangement of the respective elements is not limited to that shown.
  • FIG. 17 is a cross sectional view of an electronic circuit component representing an embodiment of the present invention.
  • 22 is a photosensitive glass substrate, 23 a through hole and 24 a conductive portion formed inside the through hole. Further, in FIG. 17, portions other than the photosensitive glass substrate 22 , through hole 23 and conductive portion 24 are the same as those in embodiment 9.
  • the manufacturing method of the electronic circuit component as shown in FIG. 17 is the same as that of embodiment 9 except for the through hole formation method which will be explained below.
  • photosensitive glass substrate a photosensitive glass series of Li 2 ⁇ Al 2 O 3 ⁇ SiO 2 (Au,Ce) is used.
  • a mask on which a through hole pattern was drawn by Cr was closely contacted and was exposed by using an Hg—Xe lamp. Thereafter, being developed and crystallized and a glass substrate having through holes were obtained.
  • the wall face of the through hole becomes more vertical, in other words, the taper angle thereof is enlarged in comparison with other through hole formation methods such as the sand blasting method, which permits formation of further fine through holes. Accordingly, in the present embodiment, the elements can be integrated in further high integration degree, thereby, an equivalent integration degree can be achieved with about halved area in comparison with embodiment 7 or 8.
  • FIG. 17 structure is one embodiment of the present invention, and the arrangement of the respective elements is not limited to that shown.
  • FIG. 18 is a cross sectional view of a semiconductor connection substrate representing one embodiment of the present invention.
  • 1 is a glass substrate (product of Nippon Electric Glass Co., Ltd.,BLC), and the thickness of which is 0.5 mm.
  • FIG. 18 2 is an organic insulator and photosensitive polyimide (product of Hitachi Chemical Co., Ltd.,HD-6000) is used therefor.
  • Capacitor elements formed inside the organic insulator 2 are constituted by a capacitor 3 in a three layer structure constituted by a lower electrode 3 a of Cu, a dielectric body 3 b of oxide of Ta and an upper electrode 3 c of Cu and a capacitor 3 ′ in a three layer structure constituted by a lower electrode 3 ′ a of Cu, a dielectric body 3 ′ b of polyimide and an upper electrode 3 ′ c of Cu.
  • An inductor element 4 is a spiral type inductor and the material thereof is Cu.
  • a resistor 5 is constituted by a resistance body 5 b and electrodes 5 a and 5 c .
  • the resistance body 5 b is a compound of Ta and T i and the electrodes 5 a and 5 c are composed of Cu.
  • FIG. 18 is another insulator using photosensitive polyimide (product of Hitachi Chemical Co., Ltd., HD-6000).
  • Capacitor elements formed inside the organic insulator 12 are constituted by a capacitor 13 in a three layer structure constituted by a lower electrode 13 a of Cu, a dielectric body 13 b of oxide of Ta and an upper electrode 13 c of Cu and a capacitor 13 ′ in a three layer structure constituted by a lower electrode 13 ′ a of Cu, a dielectric body 13 ′ b of polyimide and an upper electrode 13 ′ c of Cu.
  • An inductor element 14 is a spiral type inductor and the material thereof is Cu.
  • a resistor 15 is constituted by a resistance body 15 b and electrodes 15 a and 15 c .
  • the resistance body 15 b is a compound of Ta and Ti and the electrodes 15 a and 15 c are composed of Cu.
  • the respective elements formed inside the organic insulators 2 and 12 are electrically connected via conductor portions filled in through holes 20 formed in the glass substrate so as to provide a predetermined functions.
  • 6 is a metal terminal portion used for connection with an external terminal and in the drawing a solder ball 7 is mounted on the metal terminal portion 6 .
  • a sand blast use film resist (product of Tokyo Ohka, Odale)of 100 ⁇ m was laminated on the glass substrate having thickness of 0.5 mm through exposure and development process and an etching use resist was formed. Subsequently, through holes were formed in the glass substrate with micro sand blasting method. Then, the resist film was peeled off, electrolytic plating use seed films Cr:50 nm, Cu:500 nm were formed on the surface of the glass substrate and walls of the via holes with spattering method.
  • a Cr film of 50 nm was formed on the main surface of a glass substrate spattering method and further, a Cu film of 500 nm was formed thereon, which was used for current feeding use seed film for Cu plating.
  • a Cu film negative type liquid state resist PMER-N-CA1000 product of Tokyo Ohka
  • a resist mask was formed through exposure and development steps. At the resist opening portions electrolytic copper plating of 10 ⁇ m was performed with current density of 1 A/dm. Subsequently, the resist mask was removed and the copper seed film was removed with copper etching liquid Cobra etch (product of Ebara Densan). Further, by making use of Cr etching liquid of permanganic acid series Cr seed film was removed and the lower electrode was formed.
  • a Cr film of 50 nm is formed with spattering method.
  • Ta 2 O 5 film having thickness of 500 nm was formed on the lower electrode by spattering method.
  • 500 cp(product of Tokyo Ohka) was coated and after performing drying, exposing and developing process a resist mask for a dielectric layer was formed. Subsequently, dry etch was performed by making use of CF 4 to remove unnecessary portion thereof and further, unnecessary portion of the barrier layer was removed with Cr etching liquid of permanganic acid, then, the resist mask was removed and the dielectric layer was formed.
  • photosensitive polyimide HD 6000 product of Hitachi Chemical Co., Ltd.
  • photosensitive polyimide HD 6000 product of Hitachi Chemical Co., Ltd.
  • a hot plate through exposing and developing process the dielectric layer over the lower electrode was exposed.
  • a covering portion of the polyimide was opened inside from the scribe area by 80 ⁇ m used for cutting into pieces as the electronic circuit components.
  • the ployimide was hardened at 250° C./2 hours under nitrogen atmosphere to form the organic insulator of 10 ⁇ m.
  • a TaN film of 500 nm was formed with spattering method.
  • 100 cp was spin-coated and prebaked, thereafter, a resist pattern mask was formed through exposure and development. By using the mask The TaN film was dry etched with CF 4 . Then, a plurality of resistor elements were formed by peeling off the resist.
  • a Cr film of 50 nm was formed with spattering method and further, a Cu film of 500 nm was formed thereon, which was used as a seed film.
  • PMER-N-CA1000 product of Tokyo Ohka
  • a resist mask was formed through exposure and development steps. At the resist opening portions electrolytic copper plating of 10 ⁇ m was performed with current density of 1 A/dm. Subsequently, the resist mask was removed and the copper seed film was removed with copper etching liquid Cobra etch (product of Ebara Densan). Further, by making use of Cr etching liquid of permanganic acid series Cr seed film was removed and the upper electrode, electrodes for the resistors and the inductor element were formed.
  • photosensitive polyimide HD 6000 product of Hitachi Chemical Co., Ltd.
  • the polyimide having an opening is hardened at 250° C./1 hour under nitrogen atmosphere and the organic insulator was formed so that the polyimide covering portion comes inside by 80 ⁇ m from the scribe area used for cutting into pieces as the electronic circuit components.
  • a Cr film of 50 nm was formed on the back surface of the glass substrate with spattering method and further, a Cu film of 500 nm was formed thereon, which was used for current feeding use seed film for Cu plating.
  • a resist mask was formed through exposure and development steps. At the resist opening portions electrolytic copper plating of 10 ⁇ m was performed with current density of 1 A/dm. Subsequently, the resist mask was removed and the copper seed film was removed with copper etching liquid Cobra etch (product of Ebara Densan). Further, by making use of Cr etching liquid of permanganic acid series Cr seed film was removed and the lower electrode was formed.
  • a Cr film of 50 nm is formed with spattering method.
  • Ta 2 O 5 film having thickness of 500 nm was formed on the lower electrode by spattering method.
  • 500 cp(product of Tokyo Ohka) was coated and after performing drying, exposing and developing process a resist mask for a dielectric layer was formed. Subsequently, dry etch was performed by making use of CF 4 to remove unnecessary portion thereof and further, unnecessary portion of the barrier layer was removed with Cr etching liquid of permanganic acid, then, the resist mask was removed and the dielectric layer was formed.
  • photosensitive polyimide HD 6000 product of Hitachi Chemical Co., Ltd.
  • photosensitive polyimide HD 6000 product of Hitachi Chemical Co., Ltd.
  • the polyimide having an opening is hardened at 250° C./2 hours under nitrogen atmosphere and the organic insulator of 10 ⁇ m was formed so that the polyimide covering portion comes inside by 80 ⁇ m from the scribe area used for cutting into pieces as the electronic circuit components.
  • a TaN film of 500 nm was formed with spattering method.
  • 100 cp was spin-coated and prebaked, thereafter, a resist pattern mask was formed through exposure and development. By using the mask The TaN film was dry etched with CF 4 . Then, a plurality of resistor elements were formed by peeling off the resist.
  • a Cr film of 50 nm was formed with spattering method and further, a Cu film of 500 nm was formed thereon, which was used as a seed film.
  • PMER-N-CA1000 product of Tokyo Ohka
  • a resist mask was formed through exposure and development steps. At the resist opening portions electrolytic copper plating of 10 gm was performed with current density of 1 A/dm. Subsequently, the resist mask was removed and the copper seed film was removed with copper etching liquid Cobra etch (product of Ebara Densan). Further, by making use of Cr etching liquid of permanganic acid series Cr seed film was removed and the upper electrode, electrodes for the resistors and the inductor element were formed.
  • photosensitive polyimide HD 6000 product of Hitachi Chemical Co., Ltd.
  • the polyimide having an opening is hardened at 250° C./1 hour under nitrogen atmosphere and the organic insulator was formed so that the polyimide covering portion comes inside by 80 ⁇ m from the scribe area used for cutting into pieces as the electronic circuit components.
  • the electrolytic plating use seed films Cr:50 nm, Cu:500 nm were formed.
  • a resist mask for plating was formed through exposure and development then, a plating film of 10, am was formed by Cu electrolytic plating and further, an electrolytic nickel plating film of 2 ⁇ m was formed.
  • the wirings and the metal terminal portions were formed.
  • photosensitive polyimide HD 6000 product of Hitachi Chemical Co., Ltd.
  • the polyimide having an opening is hardened at 250° C./1 hour under nitrogen atmosphere and the organic insulator was formed so that the polyimide covering portion comes inside by 80 ⁇ m from the scribe area used for cutting into pieces as the electronic circuit components.
  • the external electrodes were formed by arranging the lead free solder balls having a diameter of 200 ⁇ m and performing reflow processing.
  • capacitors having a small capacitance can be formed accurately, which enhances reliability of the circuits and expands available capacitance range.
  • the electronic circuit component can be manufactured in further simplified and low cost processes in addition to the advantages obtained in embodiment 9.
  • the electronic circuit component of course shows a high reliability such as in connection with impact resistance.
  • the conductive loss and dielectric loss are reduced, thereby, loss of signals transmitting through the electronic circuits can be reduced with the low cost material.
  • FIG. 18 structure is one embodiment of the present invention, and the arrangement of the respective elements is not limited to that shown.
  • FIG. 19 is a cross sectional view of a semiconductor connection substrate representing one embodiment of the present invention.
  • 1 is a glass substrate (product of Nippon Electric Glass Co., Ltd.,BLC), and the thickness of which is 0.5 mm.
  • 2 is an organic insulator and photosensitive polyimide (product of Hitachi Chemical Co., Ltd., HD-6000) is used therefor.
  • Capacitor elements formed inside the organic insulator 2 are constituted by a capacitor 3 in a three layer structure constituted by a lower electrode 3 a of Cu, a dielectric body 3 b of oxide of Ta and an upper electrode 3 c of Cu and a capacitor 3 ′ in a three layer structure constituted by a lower electrode 3 ′ a of Cu, a dielectric body 3 ′ b of polyimide and an upper electrode 3 ′ c of Cu.
  • 12 is another insulator using photosensitive polyimide(product of Hitachi Chemical Co., Ltd., HD-6000).
  • An inductor element 14 is a spiral type inductor and the material thereof is Cu.
  • a resistor 15 is constituted by a resistance body 15 b and electrodes 15 a and 15 c .
  • the resistance body 15 b is a compound of Ta and Ti and the electrodes 15 a and 15 c are composed of Cu.
  • the respective elements formed inside the organic insulators 2 and 12 are electrically connected via conductor portions filled in through holes 20 formed in the glass substrate so as to provide a predetermined functions.
  • 6 is a metal terminal portion used for connection with an external terminal and in the drawing a solder ball 7 is mounted on the metal terminal portion 6 .
  • a sand blast use film resist (product of Tokyo Ohka, Odale)of 100 ⁇ m was laminated on the glass substrate having thickness of 0.5 mm through exposure and development process and an etching use resist was formed. Subsequently, through holes were formed in the glass substrate with micro sand blasting method. Then, the resist film was peeled off, electrolytic plating use seed films Cr:50 nm, Cu:500 nm were formed on the surface of the glass substrate and walls of the via holes with spattering method.
  • a plating use film resist product of Hitachi Chemical Co., Ltd., HN 920
  • a resist mask was formed through exposure and development, then, conductive layers were formed inside the via holes by Cu electrolytic plating. Subsequently, the resist and the electrolytic plating seed film were peeled off.
  • a Cr film of 50 nm was formed on the main surface of a glass substrate spattering method and further, a Cu film of 500 nm was formed thereon, which was used for current feeding use seed film for Cu plating.
  • a Cu film negative type liquid state resist PMER-N-CA1000 product of Tokyo Ohka
  • a resist mask was formed through exposure and development steps. At the resist opening portions electrolytic copper plating of 10 ⁇ m was performed with current density of 1 A/dm. Subsequently, the resist mask was removed and the copper seed film was removed with copper etching liquid Cobra etch (product of Ebara Densan). Further, by making use of Cr etching liquid of permanganic acid series Cr seed film was removed and the lower electrode was formed.
  • a Cr film of 50 nm is formed with spattering method.
  • Ta 2 O 5 film having thickness of 500 nm was formed on the lower electrode by spattering method.
  • 500 cp(product of Tokyo Ohka) was coated and after performing drying, exposing and developing process a resist mask for a dielectric layer was formed. Subsequently, dry etch was performed by making use of CF 4 to remove unnecessary portion thereof and further, unnecessary portion of the barrier layer was removed with Cr etching liquid of permanganic acid, then, the resist mask was removed and the dielectric layer was formed.
  • photosensitive polyimide HD 6000 product of Hitachi Chemical Co., Ltd.
  • photosensitive polyimide HD 6000 product of Hitachi Chemical Co., Ltd.
  • a hot plate through exposing and developing process the dielectric layer over the lower electrode was exposed.
  • a covering portion of the polyimide was opened inside from the scribe area by 80 ⁇ m used for cutting into pieces as the electronic circuit components.
  • the ployimide was hardened at 250° C./2 hours under nitrogen atmosphere to form the organic insulator of 10 ⁇ m.
  • a Cr film of 50 nm was formed with spattering method and further, a Cu film of 500 nm was formed thereon, which was used as a seed film.
  • PMER-N-CA1000 product of Tokyo Ohka
  • a resist mask was formed through exposure and development steps. At the resist opening portions electrolytic copper plating of 10 ⁇ m was performed with current density of 1 A/dm. Subsequently, the resist mask was removed and the copper seed film was removed with copper etching liquid Cobra etch (product of Ebara Densan). Further, by making use of Cr etching liquid of permanganic acid series Cr seed film was removed and the upper electrodes were formed.
  • a TaN film of 500 nm was formed with spattering method.
  • 100 cp was spin-coated and prebaked, thereafter, a resist pattern mask was formed through exposure and development. By using the mask The TaN film was dry etched with CF 4 . Then, a plurality of resistor elements were formed by peeling off the resist.
  • a Cr film of 50 nm was formed with spattering method and further, a Cu film of 500 nm was formed thereon, which was used as a seed film.
  • PMER-N-CA1000 product of Tokyo Ohka
  • a resist mask was formed through exposure and development steps. At the resist opening portions electrolytic copper plating of 10 ⁇ m was performed with current density of 1 A/dm. Subsequently, the resist mask was removed and the copper seed film was removed with copper etching liquid Cobra etch (product of Ebara Densan). Further, by making use of Cr etching liquid of permanganic acid series Cr seed film was removed and the electrodes for the resistors and the inductor element were formed.
  • photosensitive polyimide HD 6000 product of Hitachi Chemical Co., Ltd.
  • the polyimide having an opening is hardened at 250° C./1 hour under nitrogen atmosphere and the organic insulator was formed so that the polyimide covering portion comes inside by 80 ⁇ m from the scribe area used for cutting into pieces as the electronic circuit components.
  • the electrolytic plating use seed films Cr:50 nm, Cu:500 nm were formed.
  • a resist mask for plating was formed through exposure and development then, a plating film of 10 ⁇ m was formed by Cu electrolytic plating and further, an electrolytic nickel plating film of 2 ⁇ m was formed. Finally, after peeling off the resist and the electrolytic plating seed film, the wirings and the metal terminal portions were formed.
  • photosensitive polyimide HD 6000 product of Hitachi Chemical Co., Ltd.
  • the polyimide having an opening is hardened at 250° C./1 hour and the organic insulator was formed so that the polyimide covering portion comes inside by 80 ⁇ m from the scribe area used for cutting into pieces as the electronic circuit components.
  • the external electrodes were formed by arranging the lead free solder balls having a diameter of 200 am and performing reflow processing.
  • the electronic circuit component of course shows a high reliability such as in connection with impact resistance.
  • the conductive loss and dielectric loss are reduced, thereby, loss of signals transmitting through the electronic circuits can be reduced with the low cost material.
  • FIG. 19 structure is one embodiment of the present invention, and the arrangement of the respective elements is not limited to that shown.
  • FIG. 20 is a cross sectional view of an electronic circuit component representing one embodiment of the present invention.
  • 1 is a glass substrate (product of Nippon Electric Glass Co., Ltd.,BLC), and the thickness of which is 0.5 mm.
  • 2 is an organic insulator and photosensitive polyimide (product of Hitachi Chemical Co., Ltd., HD-6000) is used therefor.
  • Capacitor elements formed inside the organic insulator 2 are constituted by a capacitor 3 in a three layer structure constituted by a lower electrode 3 a of Cu, a dielectric body 3 b of oxide of Ta and an upper electrode 3 c of Cu and a capacitor 3 ′ in a three layer structure constituted by a lower electrode 3 ′ a of Cu, a dielectric body 3 ′ b of polyimide and an upper electrode 3 ′ c of Cu.
  • An inductor element 4 is a spiral type inductor and the material thereof is Cu.
  • a resistor 5 is constituted by a resistance body 5 b and electrodes 5 a and 5 c .
  • the resistance body 5 b is a compound of Ta and Ti and the electrodes 5 a and 5 c are composed of Cu.
  • 12 is another insulator using photosensitive polyimide(product of Hitachi Chemical Co., Ltd., HD-6000).
  • Capacitor elements formed inside the organic insulator 12 are constituted by a capacitor 13 in a three layer structure constituted by a lower electrode 13 a of Cu, a dielectric body 13 b of oxide of Ta and an upper electrode 13 c of Cu and a capacitor 13 ′ in a three layer structure constituted by a lower electrode 13 ′ a of Cu, a dielectric body 13 ′ b of polyimide and an upper electrode 13 ′ c of Cu.
  • An inductor element 14 is a spiral type inductor and the material thereof is Cu.
  • a resistor 15 is constituted by a resistance body 15 b and electrodes 15 a and 15 c .
  • the resistance body 15 b is a compound of Ta and Ti and the electrodes 15 a and 15 c are composed of Cu.
  • the respective elements formed inside the organic insulators 2 and 12 are electrically connected via conductor portions filled in through holes 20 formed in the glass substrate so as to provide a predetermined functions.
  • 6 is a metal terminal portion used for connection with a n external terminal and in the drawing a solder ball 7 is mounted on the metal terminal portion 6 .
  • a sand blast use film resist (product of Tokyo Ohka, Odale)of 100 ⁇ m was laminated on the glass substrate having thickness of 0.5 mm through exposure and development process and an etching use resist was formed. Subsequently, through holes were formed in the glass substrate with micro sand blasting method. Then, the resist film was peeled off, electrolytic plating use seed films Cr: 50 nm, Cu: 500 nm were formed on the surface of the glass substrate and walls of the via-holes with spattering method.
  • a plating use film resist product of Hitachi Chemical Co., Ltd., HN 920
  • a resist mask was formed through exposure and development, then, conductive layers were formed inside the via holes by Cu electrolytic plating. Subsequently, the resist and the electrolytic plating seed film were peeled off.
  • a Cr film of 50 nm was formed on the main surface of a glass substrate spattering method and further, a Cu film of 500 nm was formed thereon, which was used for current feeding use seed film for Cu plating.
  • a Cu film negative type liquid state resist PMER-N-CA1000 product of Tokyo Ohka
  • a resist mask was formed through exposure and development steps. At the resist opening portions electrolytic copper plating of 10 ⁇ m was performed with current density of 1 A/dm. Subsequently, the resist mask was removed and the copper seed film was removed with copper etching liquid Cobra etch (product of Ebara Densan). Further, by making use of Cr etching liquid of permanganic acid series Cr seed film was removed and the lower electrode was formed.
  • a Cr film of 50 nm is formed with spattering method.
  • Ta 2 O 5 film having thickness of 500 nm was formed on the lower electrode by spattering method.
  • 500 cp(product of Tokyo Ohka) was coated and after performing drying, exposing and developing process a resist mask for a dielectric layer was formed. Subsequently, dry etch was performed by making use of CF 4 to remove unnecessary portion thereof and further, unnecessary portion of the barrier layer was removed with Cr etching liquid of permanganic acid, then, the resist mask was removed and the dielectric layer was formed.
  • photosensitive polyimide HD 6000 product of Hitachi Chemical Co., Ltd.
  • photosensitive polyimide HD 6000 product of Hitachi Chemical Co., Ltd.
  • the polyimide layer was opened so that the end portion of the opening was located at the inner side from the end of the lower electrode by 20 ⁇ m.
  • the polyimide is hardened at 250° C./2 hours under nitrogen atmosphere to form the organic insulator of 10 ⁇ m.
  • a Cr film of 50 nm was formed with spattering method and further, a Cu film of 500 nm was formed thereon, which was used as a seed film.
  • PMER-N-CA1000 product of Tokyo Ohka
  • a resist mask was formed through exposure and development steps. At the resist opening portions electrolytic copper plating of 10 ⁇ m was performed with current density of 1 A/dm. Subsequently, the resist mask was removed and the copper seed film was removed with copper etching liquid Cobra etch (product of Ebara Densan). Further, by making use of Cr etching liquid of permanganic acid series Cr seed film was removed and the upper electrodes were formed.
  • photosensitive polyimide HD 6000 product of Hitachi Chemical Co., Ltd.
  • photosensitive polyimide HD 6000 product of Hitachi Chemical Co., Ltd.
  • a TaN film of 500 nm was formed with spattering method.
  • a resist pattern mask was formed through exposure and development. By using the mask The TaN film was dry etched with CF 4 . Then, a plurality of resistor elements were formed by peeling off the resist.
  • a Cr film of 50 nm was formed with spattering method and further, a Cu film of 500 nm was formed thereon, which was used as a seed film.
  • PMER-N-CA1000 product of Tokyo Ohka
  • a resist mask was formed through exposure and development steps. At the resist opening portions electrolytic copper plating of 10 ⁇ m was performed with current density of 1 A/dm. Subsequently, the resist mask was removed and the copper seed film was removed with copper etching liquid Cobra etch (product of Ebara Densan). Further, by making use of Cr etching liquid of permanganic acid series Cr seed film was removed and the electrodes for the resistors were formed.
  • photosensitive polyimide HD 6000 product of Hitachi Chemical Co., Ltd.
  • photosensitive polyimide HD 6000 product of Hitachi Chemical Co., Ltd.
  • a Cr film of 50 nm was formed with spattering method and further, a Cu film of 500 nm was formed thereon, which was used as a seed film.
  • PMER-N-CA1000 product of Tokyo Ohka
  • a resist mask was formed through exposure and development steps. At the resist opening portions electrolytic copper plating of 10 ⁇ m was performed with current density of 1 A/dm. Subsequently, the resist mask was removed and the copper seed film was removed with copper etching liquid Cobra etch (product of Ebara Densan). Further, by making use of Cr etching liquid of permanganic acid series Cr seed film was removed and the inductor elements were formed.
  • photosensitive polyimide HD 6000 product of Hitachi Chemical Co., Ltd.
  • photosensitive polyimide HD 6000 product of Hitachi Chemical Co., Ltd.
  • a Cr film of 50 nm was formed on the back surface of a glass substrate spattering method and further, a Cu film of 500 nm was formed thereon, which was used for current feeding use seed film for Cu plating.
  • a Cu film negative type liquid state resist PMER-N-CA1000 product of Tokyo Ohka
  • a resist mask was formed through exposure and development steps. At the resist opening portions electrolytic copper plating of 10 ⁇ m was performed with current density of 1 A/dm. Subsequently, the resist mask was removed and the copper seed film was removed with copper etching liquid Cobra etch (product of Ebara Densan). Further, by making use of Cr etching liquid of permanganic acid series Cr seed film was removed and the lower electrode was formed.
  • a Cr film of 50 nm is formed with spattering method.
  • Ta 2 O 5 film having thickness of 500 nm was formed on the lower electrode by spattering method.
  • 500 cp(product of Tokyo Ohka) was coated and after performing drying, exposing and developing process a resist mask for a dielectric layer was formed. Subsequently, dry etch was performed by making use of CF 4 to remove unnecessary portion thereof and further, unnecessary portion of the barrier layer was removed with Cr etching liquid of permanganic acid, then, the resist mask was removed and the dielectric layer was formed.
  • photosensitive polyimide HD 6000 product of Hitachi Chemical Co., Ltd.
  • photosensitive polyimide HD 6000 product of Hitachi Chemical Co., Ltd.
  • the polyimide layer was opened so that the end portion of the opening was located at the inner side from the end of the lower electrode by 20 ⁇ m.
  • the polyimide is hardened at 250° C./2 hours under nitrogen atmosphere to form the organic insulator of 10 ⁇ m.
  • a Cr film of 50 nm was formed with spattering method and further, a Cu film of 500 nm was formed thereon, which was used as a seed film.
  • PMER-N-CA1000 product of Tokyo Ohka
  • a resist mask was formed through exposure and development steps. At the resist opening portions electrolytic copper plating of 10 ⁇ m was performed with current density of 1 A/dm. Subsequently, the resist mask was removed and the copper seed film was removed with copper etching liquid Cobra etch (product of Ebara Densan). Further, by making use of Cr etching liquid of permanganic acid series Cr seed film was removed and the upper electrodes were formed.
  • photosensitive polyimide HD 6000 product of Hitachi Chemical Co., Ltd.
  • photosensitive polyimide HD 6000 product of Hitachi Chemical Co., Ltd.
  • a TaN film of 500 nm was formed with spattering method.
  • a resist pattern mask was formed through exposure and development. By using the mask The TaN film was dry etched with CF 4 . Then, a plurality of resistor elements were formed by peeling off the resist.
  • a Cr film of 50 nm was formed with spattering method and further, a Cu film of 500 nm was formed thereon, which was used as a seed film.
  • PMER-N-CA1000 product of Tokyo Ohka
  • a resist mask was formed through exposure and development steps. At the resist opening portions electrolytic copper plating of 10 ⁇ m was performed with current density of 1 A/dm. Subsequently, the resist mask was removed and the copper seed film was removed with copper etching liquid Cobra etch (product of Ebara Densan). Further, by making use of Cr etching liquid of permanganic acid series Cr seed film was removed and the electrodes for the resistors were formed.
  • photosensitive polyimide HD 6000 product of Hitachi Chemical Co., Ltd.
  • photosensitive polyimide HD 6000 product of Hitachi Chemical Co., Ltd.
  • photosensitive polyimide HD 6000 product of Hitachi Chemical Co., Ltd.
  • photosensitive polyimide HD 6000 product of Hitachi Chemical Co., Ltd.
  • the external electrodes were formed by arranging the lead free solder balls having a diameter of 200 ⁇ m and performing reflow processing.
  • the capacitor elements, inductor elements and resistor elements are respectively arranged at a plurality of different distances from the surface of the glass substrate, the respective elements can be integrated in further high density, therefore, a further small sized electronic circuit component can be obtained in addition to the advantages obtained in embodiments 9 and 11.
  • the electronic circuit component of course shows a high reliability such as in connection with impact resistance.
  • the conductive loss and dielectric loss are reduced, thereby, loss of signals transmitting through the electronic circuits can be reduced with the low cost material.
  • FIG. 20 structure is one embodiment of the present invention, and the arrangement of the respective elements is not limited to that shown.
  • FIG. 21 is a cross sectional view of an electronic circuit component representing one embodiment of the present invention.
  • 1 is a glass substrate (product of Nippon Electric Glass Co., Ltd.,BLC), and the thickness of which is 0.5 mm.
  • FIG. 21, 2 and 12 are an organic insulator and photosensitive polyimide (product of Hitachi Chemical Co., Ltd., HD-6000) is used therefor.
  • Capacitor elements formed inside the organic insulators 2 and 12 are constituted by capacitors 3 and 13 in a three layer structure constituted by lower electrodes 3 a and 13 a of Cu, a dielectric bodies 3 b and 13 b of oxide of Ta and upper electrodes 3 c and 13 c of Cu and capacitors 3 ′ and 13 ′ in a three layer structure constituted by lower electrode 3 ′ a 13 ′ a of Cu, dielectric bodies 3 ′ b and 13 ′ b of polyimide and upper electrode 3 ′ c and 13 ′ c of Cu. Further, on the upper electrode connecting portions 8 for connecting with upper wirings are provided
  • An inductor element 4 and 14 are spiral type inductors and the material thereof is Cu.
  • Resistors 5 and 15 are constituted by resistance bodies 5 b and 15 and electrodes 5 a 15 a and 5 c and 15 c .
  • the resistance bodies 5 b and 15 b are a compound of Ta and Ti and the electrodes 5 a and 15 a and 5 c and 15 c are composed of Cu.
  • the respective elements formed inside the organic insulators 2 and 12 are electrically connected via conductor portions filled in through holes 20 formed in the glass substrate so as to provide a predetermined functions.
  • an organic insulator 9 having a function of buffering stress is provided.
  • a liquid polyimide material in which polyimide fine particles are dispersed product of Hitachi Chemical Co., Ltd., GH-P500 was used.
  • 6 is a metal terminal portion used for connection with an external terminal and in the drawing a solder ball 7 is mounted on the metal terminal portion 6 .
  • a sand blast use film resist (product of Tokyo Ohka, Odale)of 100 ⁇ m was laminated on the glass substrate having thickness of 0.5 mm through exposure and development process and an etching use resist was formed. Subsequently, through holes were formed in the glass substrate with micro sand blasting method. Then, the resist film was peeled off, electrolytic plating use seed films Cr:50 nm, Cu:500 nm were formed on the surface of the glass substrate and walls of the via holes with spattering method.
  • a plating use film resist product of Hitachi Chemical Co., Ltd., HN 920
  • a resist mask was formed through exposure and development, then, conductive layers were formed inside the via holes by Cu electrolytic plating. Subsequently, the resist and the electrolytic plating seed film were peeled off.
  • a Cr film of 50 nm was formed on the main surface of a glass substrate spattering method and further, a Cu film of 500 nm was formed thereon, which was used for current feeding use seed film for Cu plating.
  • a Cu film negative type liquid state resist PMER-N-CA1000 product of Tokyo Ohka
  • a resist mask was formed through exposure and development steps. At the resist opening portions electrolytic copper plating of 10 ⁇ m was performed with current density of 1 A/dm. Subsequently, the resist mask was removed and the copper seed film was removed with copper etching liquid Cobra etch (product of Ebara Densan). Further, by making use of Cr etching liquid of permanganic acid series Cr seed film was removed and the lower electrode was formed.
  • a Cr film of 50 nm is formed with spattering method.
  • Ta 2 O 5 film having thickness of 500 nm was formed on the lower electrode by spattering method.
  • 500 cp(product of Tokyo Ohka) was coated and after performing drying, exposing and developing process a resist mask for a dielectric layer was formed. Subsequently, dry etch was performed by making use of CF 4 to remove unnecessary portion thereof and further, unnecessary portion of the barrier layer was removed with Cr etching liquid of permanganic acid, then, the resist mask was removed and the dielectric layer was formed.
  • photosensitive polyimide HD 6000 product of Hitachi Chemical Co., Ltd.
  • photosensitive polyimide HD 6000 product of Hitachi Chemical Co., Ltd.
  • the polyimide layer was opened so that the end portion of the opening was located at the inner side from the end of the lower electrode by 20 ⁇ m.
  • the polyimide is hardened at 250° C./2 hours under nitrogen atmosphere to form the organic insulator of 10 ⁇ m.
  • a Cr film of 50 nm was formed with spattering method and further, a Cu film of 500 nm was formed thereon, which was used as a seed film.
  • PMER-N-CA1000 product of Tokyo Ohka
  • a resist mask was formed through exposure and development steps. At the resist opening portions electrolytic copper plating of 10 ⁇ m was performed with current density of 1 A/dm. Subsequently, the resist mask was removed and the copper seed film was removed with copper etching liquid Cobra etch (product of Ebara Densan). Further, by making use of Cr etching liquid of permanganic acid series Cr seed film was removed and the upper electrodes were formed.
  • photosensitive polyimide HD 6000 product of Hitachi Chemical Co., Ltd.
  • photosensitive polyimide HD 6000 product of Hitachi Chemical Co., Ltd.
  • a TaN film of 500 nm was formed with spattering method.
  • 100 cp was spin-coated and prebaked, thereafter, a resist pattern mask was formed through exposure and development. By using the mask The TaN film was dry etched with CF 4 . Then, a plurality of resistor elements were formed by peeling off the resist.
  • a Cr film of 50 nm was formed, with spattering method and further, a Cu film of 500 nm was formed thereon, which was used as a seed film.
  • PMER-N-CA1000 product of Tokyo Ohka
  • a resist mask was formed through exposure and development steps. At the resist opening portions electrolytic copper plating of 10 ⁇ m was performed with current density of 1 A/dm. Subsequently, the resist mask was removed and the copper seed film was removed with copper etching liquid Cobra etch (product of Ebara Densan). Further, by making use of Cr etching liquid of permanganic acid series Cr seed film was removed and the electrodes for the resistors were formed.
  • photosensitive polyimide HD 6000 product of Hitachi Chemical Co., Ltd.
  • photosensitive polyimide HD 6000 product of Hitachi Chemical Co., Ltd.
  • a Cr film of 50 nm was formed with spattering method and further, a Cu film of 500 nm was formed thereon, which was used as a seed film.
  • PMER-N-CA1000 product of Tokyo Ohka
  • a resist mask was formed through exposure and development steps. At the resist opening portions electrolytic copper plating of 10 ⁇ m was performed with current density of 1 A/dm. Subsequently, the resist mask was removed and the copper seed film was removed with copper etching liquid Cobra etch (product of Ebara Densan). Further, by making use of Cr etching liquid of permanganic acid series Cr seed film was removed and the inductor elements were formed.
  • photosensitive polyimide HD 6000 product of Hitachi Chemical Co., Ltd.
  • the polyimide was hardened at 250° C./1 hour to form the organic insulator.
  • a Cr film of 50 nm was formed on the back surface of a glass substrate spattering method and further, a Cu film of 500 nm was formed thereon, which was used for current feeding use seed film for Cu plating.
  • a Cu film negative type liquid state resist PMER-N-CA1000 product of Tokyo Ohka
  • a resist mask was formed through exposure and development steps. At the resist opening portions electrolytic copper plating of 10 ⁇ m was performed with current density of 1 A/dm. Subsequently, the resist mask was removed and the copper seed film was removed with copper etching liquid Cobra etch (product of Ebara Densan). Further, by making use of Cr etching liquid of permanganic acid series Cr seed film was removed and the lower electrode was formed.
  • a Cr film of 50 nm is formed with spattering method.
  • Ta 2 O 5 film having thickness of 500 nm was formed on the lower electrode by spattering method.
  • 500 cp(product of Tokyo Ohka) was coated and after performing drying, exposing and developing process a resist mask for a dielectric layer was formed. Subsequently, dry etch was performed by making use of CF 4 to remove unnecessary portion thereof and further, unnecessary portion of the barrier layer was removed with Cr etching liquid of permanganic acid, then, the resist mask was removed and the dielectric layer was formed.
  • photosensitive polyimide HD 6000 product of Hitachi Chemical Co., Ltd.
  • photosensitive polyimide HD 6000 product of Hitachi Chemical Co., Ltd.
  • the polyimide layer was opened so that the end portion of the opening was located at the inner side from the end of the lower electrode by 20 ⁇ m.
  • the polyimide is hardened at 250° C./2 hours under nitrogen atmosphere to form the organic insulator of 10 ⁇ m.
  • a Cr film of 50 nm was formed with spattering method and further, a Cu film of 500 nm was formed thereon, which was used as a seed film.
  • PMER-N-CA1000 product of Tokyo Ohka
  • a resist mask was formed through exposure and development steps. At the resist opening portions electrolytic copper plating of 10 ⁇ m was performed with current density of 1 A/dm. Subsequently, the resist mask was removed and the copper seed film was removed with copper etching liquid Cobra etch (product of Ebara Densan). Further, by making use of Cr etching liquid of permanganic acid series Cr seed film was removed and the upper electrodes were formed.
  • photosensitive polyimide HD 6000 product of Hitachi Chemical Co., Ltd.
  • photosensitive polyimide HD 6000 product of Hitachi Chemical Co., Ltd.
  • a TaN film of 500 nm was formed with spattering method.
  • a resist pattern mask was formed through exposure and development. By using the mask The TaN film was dry etched with CF 4 . Then, a plurality of resistor elements were formed by peeling off the resist.
  • a Cr film of 50 nm was formed with spattering method and further, a Cu film of 500 nm was formed thereon, which was used as a seed film.
  • PMER-N-CA1000 product of Tokyo Ohka
  • a resist mask was formed through exposure and development steps. At the resist opening portions electrolytic copper plating of 10 ⁇ m was performed with current density of 1 A/dm. Subsequently, the resist mask was removed and the copper seed film was removed with copper etching liquid Cobra etch (product of Ebara Densan). Further, by making use of Cr etching liquid of permanganic acid series Cr seed film was removed and the electrodes for the resistors were formed.
  • photosensitive polyimide HD 6000 product of Hitachi Chemical Co., Ltd.
  • photosensitive polyimide HD 6000 product of Hitachi Chemical Co., Ltd.
  • a Cr film of 50 nm was formed with spattering method and further, a Cu film of 500 nm was formed thereon, which was used as a seed film.
  • PMER-N-CA1000 product of Tokyo Ohka
  • a resist mask was formed through exposure and development steps. At the resist opening portions electrolytic copper plating of 10 ⁇ m was performed with current density of 1 A/dm. Subsequently, the resist mask was removed and the copper seed film was removed with copper etching liquid Cobra etch (product of Ebara Densan). Further, by making use of Cr etching liquid of permanganic acid series Cr seed film was removed and the inductor elements and the wirings were formed.
  • liquid polyimide material GH-P 500 in which polyimide fine particles are dispersed(product of Hitachi Chemical Co., Ltd.) was print coated by using a mask, heated on a hot plate at 200° C./25 min and hardened in a constant temperature bath at 250° C./60 min to form the organic insulator having stress buffering function.
  • a Cr film of 50 nm was formed with spattering method and further, a Cu film of 500 nm was formed thereon, which was used as a seed film.
  • PMER-N-CA1000 product of Tokyo Ohka
  • a resist mask was formed through exposure and development steps. At the resist opening portions electrolytic copper plating of 10 ⁇ m was performed with current density of 1 A/dm. Subsequently, the resist mask was removed and the copper seed film was removed with copper etching liquid Cobra etch (product of Ebara Densan). Further, by making use of Cr etching liquid of permanganic acid series Cr seed film was removed and the wirings and the metal terminal portions were formed.
  • photosensitive polyimide HD 6000 product of Hitachi Chemical Co., Ltd.
  • photosensitive polyimide HD 6000 product of Hitachi Chemical Co., Ltd.
  • the external electrodes were formed by arranging the lead free solder balls having a diameter of 200 ⁇ m and performing reflow processing.
  • the organic insulator having stress buffering function is formed immediately below the metal terminal portion 6 , when being connected to a mounting substrate such as a print substrate, a thermal stress applied to the metal terminal portion 6 and the solder ball 7 due to difference of thermal expansion coefficients between the semiconductor connection substrate and the mounting substrate can be relaxed. Thereby, a semiconductor connection substrate having excellent heart resistance cycle can be obtained in addition to the advantages obtained in embodiment 13.
  • the electronic circuit component of course shows a high reliability such as in connection with impact resistance.
  • the conductive loss and dielectric loss are reduced, thereby, loss of signals transmitting through the electronic circuits can be reduced with the low cost material.
  • FIG. 21 structure is one embodiment of the present invention, and the arrangement of the respective elements is not limited to that shown.
  • a glass substrate (2) one or a plurality of elements selected from a capacitor element, an inductor element and resistor element each provided on the glass substrate,(3) a metal wiring provided on the glass substrate for connecting the elements, (4) a metal terminal portion which is a part of the metal wiring provided on the glass substrate and (5) an organic insulator which covers the elements and the circumference of the metal wiring portion except for the metal terminal portion, an electronic circuit component which permits to integrate a variety of electronic parts such as a capacitor, inductor and resistor in a high performance and in a high density can be obtained.
  • a glass substrate at predetermined positions of which through holes are provided (2) one or a plurality of elements selected from a capacitor element, inductor element and resistor element each provided on one or both sides of the glass substrate, (3) a metal wiring provided on both sides of the glass substrate for connecting the elements, (4) conductive portions formed inside the through holes for electrically connecting the metal wiring, (5) a metal terminal portion which is a part of the metal wiring provided on one or both of the glass substrate and (6) an organic insulator which covers the elements and the circumference of the metal wiring portion except for the metal terminal portion, a n electronic circuit component which permits to integrate a variety of electronic parts such as a capacitor, inductor and resistor in a high performance and in a high density can be obtained.
  • the structural portions where stresses concentratedly applied at the time of cutting out the electronic circuit component and at the time of mounting the same are designed to withstand the stresses and a possible damage on the electronic circuit component due to the applied stresses can be greatly reduced, thereby, a highly reliable electronic circuit component of a desirable manufacturing yield which permits to integrate a variety of electronic parts such as a capacitor, inductor and resistor in a high performance and in a high density can be obtained.
  • the capacitor elements are constituted by one or more of capacitor elements having a structure in which an inorganic dielectric material is sandwiched by two metal electrodes and one or more capacitor elements having a structure in which an organic dielectric material is sandwiched by two electrodes, through a proper use of dielectric materials of organic or inorganic or both, a small sized electronic circuit component of a high performance and a high integration degree can be obtained.
  • the inorganic dielectric material is an oxide of any of Ta, Mg and Sr and the organic dielectric material is polyimide, a highly reliable and high performance electronic circuit component of low cost can be obtained because of low cost and high stability property of Ta, Mg and Sr and of high thermal stability of polyimide.
  • the inorganic dielectric material is an oxide of any of Ta, Mg and Sr and the organic dielectric material is BCB (Benzo Cyclo Butene)
  • BCB Benzo Cyclo Butene
  • the inorganic dielectric material is an oxide of any of Ta, Mg and Sr and the organic dielectric material is a low dielectric loss tangent resin composition which includes a bridging component having a plurality of styrene groups as expressed by the above referred to general chemical formula and contains polymers having average molecular weight of more than 5000, a highly reliable and high performance electronic circuit component of low cost can be obtained because of low cost and high stability property of Ta, Mg and Sr and of low dielectric constant and dielectric loss tangent of the low dielectric loss tangent resin composition of low cost.
  • any of the capacitor elements, inductor elements and resistor elements are arranged on one face of the glass substrate and the remaining elements are arranged on the other face of the substrate, a possible influence between the respective elements can be reduced and the self oscillation frequencies of the elements can be increased because of reduced parasitic capacitance.
  • the structural portions where stresses concentratedly applied at the time of cutting out the electronic circuit component and at the time of mounting the same are designed to withstand the stresses and a possible damage on the electronic circuit component due to the applied stresses can be greatly reduced, and thereby, a highly reliable electronic circuit component of a desirable manufacturing yield which permits to integrate a variety of electronic parts such as a capacitor, inductor and resistor in a high performance and in a high density can be obtained.

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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Parts Printed On Printed Circuit Boards (AREA)
  • Production Of Multi-Layered Print Wiring Board (AREA)
  • Coils Or Transformers For Communication (AREA)
  • Fixed Capacitors And Capacitor Manufacturing Machines (AREA)
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Cited By (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20040195567A1 (en) * 2001-07-12 2004-10-07 Masahiko Ogino Thin film capacitor and electronic circuit component
US20050085013A1 (en) * 2002-12-04 2005-04-21 Craig Ernsberger Ball grid array resistor network
US20060254502A1 (en) * 2005-05-13 2006-11-16 Cambrios Technologies Corporation Printable electric circuits, electronic components and method of forming the same
US20060289966A1 (en) * 2005-06-22 2006-12-28 Dani Ashay A Silicon wafer with non-soluble protective coating
US20070015363A1 (en) * 2005-07-14 2007-01-18 Seiko Epson Corporation Electronic board and manufacturing method thereof, electro-optical device, and electronic apparatus
US20070085201A1 (en) * 2005-10-14 2007-04-19 Michael Bauer Power semiconductor device in lead frame technology with a vertical current path
US20070228517A1 (en) * 2006-03-31 2007-10-04 Huankiat Seh Sol-gel and mask patterning for thin-film capacitor fabrication, thin-film capacitors fabricated thereby, and systems containing same
US20080055873A1 (en) * 2006-08-31 2008-03-06 Fujitsu Limited Electronic part module and method of making the same
US20120068301A1 (en) * 2010-08-23 2012-03-22 The Hong Kong University Of Science And Technology Monolithic magnetic induction device
CN102844857A (zh) * 2010-04-20 2012-12-26 旭硝子株式会社 半导体器件贯通电极用的玻璃基板
US20150021758A1 (en) * 2013-07-16 2015-01-22 Taiwan Semiconductor Manufacturing Co., Ltd. Mechanisms for forming bump structures over wide metal pad
US9117693B2 (en) 2010-06-10 2015-08-25 Stmicroelectronics (Tours) Sas Passive integrated circuit
US20210104451A1 (en) * 2017-05-02 2021-04-08 Micron Technology, Inc. Semiconductor devices with back-side coils for wireless signal and power coupling
US20210304949A1 (en) * 2016-07-22 2021-09-30 The Trustees Of Dartmouth College Resonant coils with integrated capacitance
US11742273B2 (en) * 2016-12-21 2023-08-29 Dai Nippon Printing Co., Ltd. Through electrode substrate and semiconductor device
US11783986B2 (en) 2019-08-16 2023-10-10 The Trustees Of Dartmouth College Resonant coils with integrated capacitance
US11942428B2 (en) 2017-05-02 2024-03-26 Micron Technology, Inc. Inductors with through-substrate via cores

Families Citing this family (48)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7260890B2 (en) 2002-06-26 2007-08-28 Georgia Tech Research Corporation Methods for fabricating three-dimensional all organic interconnect structures
US6987307B2 (en) 2002-06-26 2006-01-17 Georgia Tech Research Corporation Stand-alone organic-based passive devices
US6900708B2 (en) 2002-06-26 2005-05-31 Georgia Tech Research Corporation Integrated passive devices fabricated utilizing multi-layer, organic laminates
US7489914B2 (en) 2003-03-28 2009-02-10 Georgia Tech Research Corporation Multi-band RF transceiver with passive reuse in organic substrates
US8345433B2 (en) 2004-07-08 2013-01-01 Avx Corporation Heterogeneous organic laminate stack ups for high frequency applications
JP4387269B2 (ja) * 2004-08-23 2009-12-16 株式会社テクニスコ ビアが形成されたガラス基板及びビアの形成方法
JP4762531B2 (ja) * 2004-11-30 2011-08-31 太陽誘電株式会社 電子部品及びその製造方法
JP4752280B2 (ja) * 2005-02-08 2011-08-17 カシオ計算機株式会社 チップ型電子部品およびその製造方法
JP4544181B2 (ja) 2006-03-03 2010-09-15 セイコーエプソン株式会社 電子基板、半導体装置および電子機器
JP2007242888A (ja) * 2006-03-08 2007-09-20 Sony Corp 半導体パッケージ製造方法
US7439840B2 (en) 2006-06-27 2008-10-21 Jacket Micro Devices, Inc. Methods and apparatuses for high-performing multi-layer inductors
US7808434B2 (en) 2006-08-09 2010-10-05 Avx Corporation Systems and methods for integrated antennae structures in multilayer organic-based printed circuit devices
US7989895B2 (en) 2006-11-15 2011-08-02 Avx Corporation Integration using package stacking with multi-layer organic substrates
US7727887B2 (en) * 2007-10-30 2010-06-01 International Business Machines Corporation Method for improved power distribution in a three dimensional vertical integrated circuit
US7701064B2 (en) * 2007-10-31 2010-04-20 International Business Machines Corporation Apparatus for improved power distribution in a three dimensional vertical integrated circuit
KR100955948B1 (ko) * 2007-12-21 2010-05-03 삼성전기주식회사 다중대역 송신단 모듈 및 이의 제조 방법
JP5088309B2 (ja) * 2008-12-04 2012-12-05 セイコーエプソン株式会社 電子基板及び電気光学装置並びに電子機器
US8004073B2 (en) * 2009-06-17 2011-08-23 Stats Chippac Ltd. Integrated circuit packaging system with interposer and method of manufacture thereof
JP4826852B2 (ja) * 2009-07-09 2011-11-30 セイコーエプソン株式会社 半導体装置、電気光学装置及び電子機器
TWI452673B (zh) * 2009-08-20 2014-09-11 Xintec Inc 電子裝置及其製造方法
US8766400B2 (en) 2009-08-20 2014-07-01 Ching-Yu Ni Electronic device containing passive components and fabrication method thereof
US9653370B2 (en) * 2012-11-30 2017-05-16 Infineon Technologies Austria Ag Systems and methods for embedding devices in printed circuit board structures
US9203373B2 (en) 2013-01-11 2015-12-01 Qualcomm Incorporated Diplexer design using through glass via technology
US9935166B2 (en) 2013-03-15 2018-04-03 Qualcomm Incorporated Capacitor with a dielectric between a via and a plate of the capacitor
US9634640B2 (en) 2013-05-06 2017-04-25 Qualcomm Incorporated Tunable diplexers in three-dimensional (3D) integrated circuits (IC) (3DIC) and related components and methods
US9264013B2 (en) 2013-06-04 2016-02-16 Qualcomm Incorporated Systems for reducing magnetic coupling in integrated circuits (ICS), and related components and methods
EP3920200A1 (fr) 2014-05-05 2021-12-08 3D Glass Solutions, Inc. Antenne et transformateurs inducteurs 2d et 3d fabricant des substrats photoactifs
CN105448897B (zh) * 2014-08-29 2018-12-21 展讯通信（上海）有限公司 减小芯片外电感占用空间的集成封装结构
US9893048B2 (en) * 2015-09-14 2018-02-13 Qualcomm Incorporated Passive-on-glass (POG) device and method
US10070533B2 (en) 2015-09-30 2018-09-04 3D Glass Solutions, Inc. Photo-definable glass with integrated electronics and ground plane
WO2017147511A1 (fr) 2016-02-25 2017-08-31 3D Glass Solutions, Inc. Substrats photoactifs pour fabriquer un condensateur 3d et un réseau de condensateurs
WO2017177171A1 (fr) 2016-04-08 2017-10-12 3D Glass Solutions, Inc. Procédés de fabrication de substrats photosensibles appropriés pour un coupleur optique
JP7150342B2 (ja) 2017-04-28 2022-10-11 スリーディー グラス ソリューションズ，インク Ｒｆサーキュレータ
EP3649733A1 (fr) 2017-07-07 2020-05-13 3D Glass Solutions, Inc. Dispositifs d'éléments bosselés à rf en 2d et en 3d pour un système à rf dans des substrats de verre photo-actifs en groupe
JP2019091767A (ja) * 2017-11-13 2019-06-13 大日本印刷株式会社 配線基板及び配線基板を備える実装基板並びに配線基板の製造方法
WO2019118761A1 (fr) 2017-12-15 2019-06-20 3D Glass Solutions, Inc. Filtre rf résonnant de ligne de transmission couplée
WO2019136024A1 (fr) 2018-01-04 2019-07-11 3D Glass Solutions, Inc. Structure conductrice d'adaptation d'impédance pour circuits rf à haute efficacité
US11076489B2 (en) 2018-04-10 2021-07-27 3D Glass Solutions, Inc. RF integrated power condition capacitor
KR102475010B1 (ko) 2018-05-29 2022-12-07 3디 글래스 솔루션즈 인코포레이티드 저 삽입 손실 rf 전송 라인
AU2019344542B2 (en) 2018-09-17 2022-02-24 3D Glass Solutions, Inc. High efficiency compact slotted antenna with a ground plane
WO2020139955A1 (fr) 2018-12-28 2020-07-02 3D Glass Solutions, Inc. Systèmes d'ondes rf, micro-ondes et mm de condensateur annulaire
WO2020139951A1 (fr) 2018-12-28 2020-07-02 3D Glass Solutions, Inc. Intégration hétérogène pour systèmes rf, hyperfréquences et à ondes millimétriques dans des substrats en verre photoactif
AU2020253553A1 (en) 2019-04-05 2021-10-28 3D Glass Solutions, Inc. Glass based empty substrate integrated waveguide devices
EP3948954B1 (fr) 2019-04-18 2023-06-14 3D Glass Solutions, Inc. Libération et découpage à l'emporte-pièce à haut rendement
DE102019127924B3 (de) * 2019-10-16 2021-01-21 Tdk Electronics Ag Bauelement und Verfahren zur Herstellung eines Bauelements
DE102019127915A1 (de) 2019-10-16 2021-04-22 Tdk Electronics Ag Sensorelement und Verfahren zur Herstellung eines Sensorelements
EP4121988A4 (fr) 2020-04-17 2023-08-30 3D Glass Solutions, Inc. Inducteur à large bande
CN111968995B (zh) * 2020-07-13 2024-02-09 深圳市汇芯通信技术有限公司 一种集成无源器件及其制作方法和集成电路

Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4490429A (en) * 1981-07-24 1984-12-25 Hitachi, Ltd. Process for manufacturing a multilayer circuit board
US4835038A (en) * 1985-06-29 1989-05-30 Kabushiki Kaisha Toshiba Substrate coated with multiple thick films
US5928766A (en) * 1991-11-28 1999-07-27 Rohm Co., Ltd. Chip-type composite part
US6021050A (en) * 1998-12-02 2000-02-01 Bourns, Inc. Printed circuit boards with integrated passive components and method for making same
US20020117743A1 (en) * 2000-12-27 2002-08-29 Matsushita Electric Industrial Co., Ltd. Component built-in module and method for producing the same
US6476695B1 (en) * 1999-05-26 2002-11-05 Sharp Kabushiki Kaisha High frequency module
US6734534B1 (en) * 2000-08-16 2004-05-11 Intel Corporation Microelectronic substrate with integrated devices
US20040150966A1 (en) * 2003-01-30 2004-08-05 Chu-Chin Hu Integrated library core for embedded passive components and method for forming electronic device thereon
US6933601B2 (en) * 2001-07-12 2005-08-23 Hitachi, Ltd. Semiconductor connection substrate

Family Cites Families (36)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6313397A (ja) 1986-07-03 1988-01-20 松下電器産業株式会社 コンデンサ内蔵厚膜回路基板
JPH0426184A (ja) * 1990-05-21 1992-01-29 Nec Corp 厚膜回路基板
JP3285919B2 (ja) 1992-02-05 2002-05-27 株式会社東芝 半導体装置
JPH06125180A (ja) * 1992-10-09 1994-05-06 Ngk Spark Plug Co Ltd キャパシタ内蔵多層配線基板
JPH06181119A (ja) * 1992-12-14 1994-06-28 Takeshi Ikeda Ｌｃ複合部品
JPH07106134A (ja) * 1993-09-29 1995-04-21 Kyocera Corp チップフィルター部品
JPH07106133A (ja) * 1993-09-29 1995-04-21 Kyocera Corp チップフィルター部品
GB2288286A (en) * 1994-03-30 1995-10-11 Plessey Semiconductors Ltd Ball grid array arrangement
JPH08255981A (ja) 1995-03-16 1996-10-01 Fujitsu Ltd 回路基板形成方法及び回路基板
JP3004931B2 (ja) 1996-03-28 2000-01-31 ホーヤ株式会社 半導体接続基板の製造方法、及びベアチップ搭載ボード
JPH1041632A (ja) * 1996-07-26 1998-02-13 Kyocera Corp 多層配線基板
JP2880133B2 (ja) 1996-09-03 1999-04-05 ホーヤ株式会社 ベアチップ搭載ボード及びベアチップ搭載ボードの製造方法
US5920454A (en) * 1997-02-11 1999-07-06 Hokuriko Electric Industry Co., Ltd. Capacitor-mounted circuit board
TW392392B (en) 1997-04-03 2000-06-01 Lucent Technologies Inc High frequency apparatus including a low loss substrate
JPH1154237A (ja) * 1997-08-07 1999-02-26 Yazaki Corp 配線基板の放電構造
JP2000028611A (ja) 1998-07-07 2000-01-28 Nitto Denko Corp 免疫学的検査方法および免疫学的検査キット
JP3275851B2 (ja) * 1998-10-13 2002-04-22 松下電器産業株式会社 高周波集積回路
JP2000183216A (ja) * 1998-12-11 2000-06-30 Mitsubishi Electric Corp 半導体装置
US6218729B1 (en) * 1999-03-11 2001-04-17 Atmel Corporation Apparatus and method for an integrated circuit having high Q reactive components
JP2000286111A (ja) * 1999-03-30 2000-10-13 Kyocera Corp 薄膜ｒｃ素子
US6400576B1 (en) * 1999-04-05 2002-06-04 Sun Microsystems, Inc. Sub-package bypass capacitor mounting for an array packaged integrated circuit
JP3322665B2 (ja) * 1999-05-26 2002-09-09 シャープ株式会社 高周波モジュール
JP2001060802A (ja) * 1999-08-19 2001-03-06 Sony Corp 回路素子基板と半導体装置及びその製造方法
US6529385B1 (en) * 1999-08-25 2003-03-04 Intel Corporation Component array adapter
KR101084525B1 (ko) * 1999-09-02 2011-11-18 이비덴 가부시키가이샤 프린트배선판 및 그 제조방법
US6252761B1 (en) * 1999-09-15 2001-06-26 National Semiconductor Corporation Embedded multi-layer ceramic capacitor in a low-temperature con-fired ceramic (LTCC) substrate
EP1085572A3 (fr) * 1999-09-16 2006-04-19 Texas Instruments Incorporated Filtre passe-bas intégré avec un empaquetage semi-conducteur
US6356455B1 (en) * 1999-09-23 2002-03-12 Morton International, Inc. Thin integral resistor/capacitor/inductor package, method of manufacture
US6535398B1 (en) * 2000-03-07 2003-03-18 Fujitsu Limited Multichip module substrates with buried discrete capacitors and components and methods for making
US6407929B1 (en) * 2000-06-29 2002-06-18 Intel Corporation Electronic package having embedded capacitors and method of fabrication therefor
US6611419B1 (en) * 2000-07-31 2003-08-26 Intel Corporation Electronic assembly comprising substrate with embedded capacitors
US6970362B1 (en) * 2000-07-31 2005-11-29 Intel Corporation Electronic assemblies and systems comprising interposer with embedded capacitors
US6556453B2 (en) * 2000-12-13 2003-04-29 Intel Corporation Electronic circuit housing with trench vias and method of fabrication therefor
US6608375B2 (en) * 2001-04-06 2003-08-19 Oki Electric Industry Co., Ltd. Semiconductor apparatus with decoupling capacitor
US6636416B2 (en) * 2001-06-14 2003-10-21 Intel Corporation Electronic assembly with laterally connected capacitors and manufacturing method
JP3953832B2 (ja) * 2002-02-22 2007-08-08 株式会社村田製作所 メディア媒体用インタフェースカード

Patent Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4490429A (en) * 1981-07-24 1984-12-25 Hitachi, Ltd. Process for manufacturing a multilayer circuit board
US4835038A (en) * 1985-06-29 1989-05-30 Kabushiki Kaisha Toshiba Substrate coated with multiple thick films
US5928766A (en) * 1991-11-28 1999-07-27 Rohm Co., Ltd. Chip-type composite part
US6021050A (en) * 1998-12-02 2000-02-01 Bourns, Inc. Printed circuit boards with integrated passive components and method for making same
US6476695B1 (en) * 1999-05-26 2002-11-05 Sharp Kabushiki Kaisha High frequency module
US6734534B1 (en) * 2000-08-16 2004-05-11 Intel Corporation Microelectronic substrate with integrated devices
US20020117743A1 (en) * 2000-12-27 2002-08-29 Matsushita Electric Industrial Co., Ltd. Component built-in module and method for producing the same
US6933601B2 (en) * 2001-07-12 2005-08-23 Hitachi, Ltd. Semiconductor connection substrate
US20040150966A1 (en) * 2003-01-30 2004-08-05 Chu-Chin Hu Integrated library core for embedded passive components and method for forming electronic device thereon

Cited By (27)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20040195567A1 (en) * 2001-07-12 2004-10-07 Masahiko Ogino Thin film capacitor and electronic circuit component
US7294905B2 (en) * 2001-07-12 2007-11-13 Hitachi, Ltd. Thin film capacitor and electronic circuit component
US20050085013A1 (en) * 2002-12-04 2005-04-21 Craig Ernsberger Ball grid array resistor network
US20060254502A1 (en) * 2005-05-13 2006-11-16 Cambrios Technologies Corporation Printable electric circuits, electronic components and method of forming the same
US7902639B2 (en) * 2005-05-13 2011-03-08 Siluria Technologies, Inc. Printable electric circuits, electronic components and method of forming the same
US20060289966A1 (en) * 2005-06-22 2006-12-28 Dani Ashay A Silicon wafer with non-soluble protective coating
US20070015363A1 (en) * 2005-07-14 2007-01-18 Seiko Epson Corporation Electronic board and manufacturing method thereof, electro-optical device, and electronic apparatus
US8143728B2 (en) 2005-07-14 2012-03-27 Seiko Epson Corporation Electronic board and manufacturing method thereof, electro-optical device, and electronic apparatus
US8013441B2 (en) * 2005-10-14 2011-09-06 Infineon Technologies Ag Power semiconductor device in lead frame employing connecting element with conductive film
US20070085201A1 (en) * 2005-10-14 2007-04-19 Michael Bauer Power semiconductor device in lead frame technology with a vertical current path
US20070228517A1 (en) * 2006-03-31 2007-10-04 Huankiat Seh Sol-gel and mask patterning for thin-film capacitor fabrication, thin-film capacitors fabricated thereby, and systems containing same
US8623737B2 (en) * 2006-03-31 2014-01-07 Intel Corporation Sol-gel and mask patterning for thin-film capacitor fabrication, thin-film capacitors fabricated thereby, and systems containing same
US20080055873A1 (en) * 2006-08-31 2008-03-06 Fujitsu Limited Electronic part module and method of making the same
US8345438B2 (en) * 2006-08-31 2013-01-01 Fujitsu Limited Electronic part module and method of making the same
CN102844857A (zh) * 2010-04-20 2012-12-26 旭硝子株式会社 半导体器件贯通电极用的玻璃基板
US9117693B2 (en) 2010-06-10 2015-08-25 Stmicroelectronics (Tours) Sas Passive integrated circuit
US9287344B2 (en) * 2010-08-23 2016-03-15 The Hong Kong University Of Science And Technology Monolithic magnetic induction device
US20120068301A1 (en) * 2010-08-23 2012-03-22 The Hong Kong University Of Science And Technology Monolithic magnetic induction device
US9018757B2 (en) * 2013-07-16 2015-04-28 Taiwan Semiconductor Manufacturing Co., Ltd. Mechanisms for forming bump structures over wide metal pad
US20150021758A1 (en) * 2013-07-16 2015-01-22 Taiwan Semiconductor Manufacturing Co., Ltd. Mechanisms for forming bump structures over wide metal pad
US20210304949A1 (en) * 2016-07-22 2021-09-30 The Trustees Of Dartmouth College Resonant coils with integrated capacitance
US11862378B2 (en) * 2016-07-22 2024-01-02 The Trustees Of Dartmouth College Resonant coils with integrated capacitance
US11742273B2 (en) * 2016-12-21 2023-08-29 Dai Nippon Printing Co., Ltd. Through electrode substrate and semiconductor device
US20210104451A1 (en) * 2017-05-02 2021-04-08 Micron Technology, Inc. Semiconductor devices with back-side coils for wireless signal and power coupling
US11823977B2 (en) * 2017-05-02 2023-11-21 Micron Technology, Inc. Semiconductor devices with back-side coils for wireless signal and power coupling
US11942428B2 (en) 2017-05-02 2024-03-26 Micron Technology, Inc. Inductors with through-substrate via cores
US11783986B2 (en) 2019-08-16 2023-10-10 The Trustees Of Dartmouth College Resonant coils with integrated capacitance

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WO2003007379A1 (fr) 2003-01-23
US20080174976A1 (en) 2008-07-24
CN1630946A (zh) 2005-06-22
EP1411553A4 (fr) 2008-09-03
US7586755B2 (en) 2009-09-08
EP1411553A1 (fr) 2004-04-21
TW552686B (en) 2003-09-11

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