US20020196396A1 - Reflection plate, manufacturing method thereof, liquid crystal display device, and manufacturing method thereof - Google Patents

Reflection plate, manufacturing method thereof, liquid crystal display device, and manufacturing method thereof Download PDF

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Publication number
US20020196396A1
US20020196396A1 US10/176,599 US17659902A US2002196396A1 US 20020196396 A1 US20020196396 A1 US 20020196396A1 US 17659902 A US17659902 A US 17659902A US 2002196396 A1 US2002196396 A1 US 2002196396A1
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Prior art keywords
reflection
reflection plate
polar angle
portions
liquid crystal
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Abandoned
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US10/176,599
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English (en)
Inventor
Michiaki Sakamoto
Yuichi Yamaguchi
Hidenori Ikeno
Takahiko Watanabe
Hironori Kikkawa
Fumihiko Matuno
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Tianma Japan Ltd
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NEC Corp
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Assigned to NEC CORPORATION reassignment NEC CORPORATION CORRECTIVE ASSIGNMENT TO CORRECT THE THIRD ASSIGNOR'S NAME PREVIOUSLY RECORDED AT REEL 013028 FRAME 0055. (ASSIGNMENT OF ASSIGNOR'S INTEREST) Assignors: IKENO, HIDENORI, KIKKAWA, HIRONORI, MATUNO, FUMIHIKO, SAKAMOTO, MICHIAKI, WATANABE, TAKAHIKO, YAMAGUCHI, YUICHI
Publication of US20020196396A1 publication Critical patent/US20020196396A1/en
Assigned to NEC LCD TECHNOLOGIES, LTD. reassignment NEC LCD TECHNOLOGIES, LTD. ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). Assignors: NEC CORPORATION
Priority to US10/920,346 priority Critical patent/US7042539B2/en
Abandoned legal-status Critical Current

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    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
    • G02F1/133553—Reflecting elements

Definitions

  • the present invention relates to a reflection plate achieving a high contrast, a manufacturing method thereof, a liquid crystal display device, and a manufacturing method thereof.
  • reflection type liquid crystal display device which reflects incident light coming from outside with a reflection plate included therein, to use the light as the light source for display.
  • the reflection type liquid crystal display device does not require backlight as a light source. Therefore, the reflection type liquid crystal display device can be more decreased in power consumption and more thinned than a transmission type liquid crystal display device, and thus is used in portable phones, etc.
  • the reflection type liquid crystal display device comprises liquid crystal sealed in a liquid crystal cell, switching elements for driving the liquid crystal, and a reflection plate which is provided inside or outside the liquid crystal cell.
  • the reflection type liquid crystal display device is an active matrix type liquid crystal display device employing thin film transistors as switching elements, for example.
  • a liquid crystal display device which comprises a reflection plate on whose surface a reflection electrode having uneven patterns is formed in order to increase light to be scattered toward the normal line direction of the reflection plate (toward the viewer) and thereby to improve the contrast, is developed as a reflection type liquid crystal display device.
  • Such a liquid crystal display device is disclosed in Japanese Patent No. 2825713, and other publications.
  • the wavy patterns are formed by arranging a plurality of cylindrical protruding portions made of resin, under a light reflection layer. This light reflection layer is formed on the reflection plate on which the protruding patterns arc formed, via an organic insulation film.
  • the plurality of protruding patterns each having a circular-shaped cross section are arranged on the surface of the reflection plate independently from one another.
  • the protruding patterns having a circular-shaped cross section have a high light scattering characteristic, and reflect incident light almost uniformly toward the entire azimuth angle.
  • the polar angle is an angle ⁇ 1 shown in FIG. 22 measured from the normal line direction of the reflection plate, while the azimuth angle is an angle ⁇ 2 measured in the plane parallel to thc reflection layer.
  • reflection characteristics azimuth angle, polar angle, intensity
  • reflection light of incident light coming from a direction of a ⁇ 30-degree polar angle are observed by examining reflection light of incident light coming from a direction of a ⁇ 30-degree polar angle.
  • a reflection plate acquiring a high reflection light intensity toward the direction of a 0-degree polar angle (toward the normal line direction) is demanded from a viewpoint of improving the contrast of a liquid crystal display device when it is used.
  • a reflection plate having protruding patterns like the one shown in FIG. 21 reflects light almost uniformly toward the entire azimuth angle. Accordingly, the relationship between the polar angle and the reflection light intensity shows a state similar to normal distribution, as shown by a graph of FIG. 23. Therefore, there has existed a limit on how much the reflection light intensity can be improved toward the direction of the 0-degree polar angle, with the use of such protruding patterns having a circular-shaped cross section.
  • an object of the present invention is to provide a reflection plate achieving a high contrast, a manufacturing method thereof, a liquid crystal display device, and a manufacturing method thereof.
  • Another object of the present invention is to provide a reflection plate which can reflect light efficiently toward the normal line direction of the reflection plate, a manufacturing method thereof, a liquid crystal display device, and a manufacturing method thereof.
  • a reflection plate according to a first aspect of the present invention has concave and protruding portions on a surface thereof, wherein:
  • reflection light intensity is dependent upon azimuth angle.
  • Distribution of reflection light intensity in relation to polar angle at the specific azimuth angle may show one or more local maximum values, other than a normal reflection component.
  • Closed figures may be formed by the protruding portions of the concave and protruding portions.
  • the closed figures may be a polygon.
  • the polygon may be approximately a triangle, or approximately a trapezoid.
  • the polygon may be approximately a triangle having a flattening ratio of equal to or greater than 0.5 and equal to or smaller than 0.8.
  • its length in a first direction in which reflection light intensity becomes the largest may be smaller than its length in a second direction which is perpendicular to the first direction.
  • Line shapes formed by the protruding portions of the closed figures may have almost uniform width.
  • the line shapes formed by the protruding portions of the closed figures may have almost uniform thickness.
  • a liquid crystal display device according to a second aspect of the present invention has the reflection plate described above.
  • the reflection light intensity may reach local maximum in a range of polar angle of 0 to 10 degrees.
  • the reflection light intensity may have a positive slope in relation to polar angle in a range of polar angle of 10 to 20 degrees, the slope may become smaller as polar angle becomes larger in a range of polar angle of 10 to A degrees (10 ⁇ A ⁇ 20), and the slope may become larger as polar angle becomes larger in a range of polar angle of A to 20 degrees.
  • a method of manufacturing a reflection plate according to a third aspect of the present invention comprises:
  • the line-shape mask may comprise mask lines whose width at and about intersection portions of the mask lines is narrower than that of portions other than the intersection portions.
  • a method of manufacturing a reflection plate according to a fourth aspect of the present invention comprises forming a contact hole portion, and at a same time, concave and protruding portions including a plurality of line-shaped protruding portions which intersect with one another, and concave portions enclosed by the protruding portions, by coating an organic resin on a substrate, and exposing and developing the organic resin by changing luminous exposure.
  • the patterning of the contact hole portion and the concave and protruding portions may include exposing the organic resin using different masks and by different luminous exposures for the two different portions.
  • Luminous exposure of the organic resin for patterning the concave and protruding portions may be 10 to 50% of luminous exposure of the organic resin for patterning the contact hole portion.
  • the patterning of the contact hole portion and the concave and protruding portions may include exposing the organic resin by using a half tone mask having different light transmittance for the contact hole portion and the concave and protruding portions, respectively.
  • a mask for forming the line-shaped protruding portions may comprise mask lines whose width at and about intersection portions of the mask lines is narrower than that of portions other than the intersection portions.
  • a method of manufacturing a liquid crystal display device comprises forming a reflection plate in accordance with the manufacturing method described above.
  • FIG. 1 is a diagram showing the cross section of a reflection type liquid crystal display device according to an embodiment of the present invention
  • FIGS. 2A and 2B are diagrams illustrating light to be reflected
  • FIGS. 3A to 3 F are diagrams showing steps of manufacturing a lower substrate shown in FIG. 1;
  • FIG. 4 is a diagram showing a mask pattern
  • FIGS. 5A to 5 C are expanded diagrams of an intersection of a mask pattern
  • FIG. 6A is an expanded diagram of a basic figure, and FIGS. 6B to 6 D are cross sections of FIG. 6A when it is cut along a line A-A;
  • FIGS. 7A and 7B are graphs showing the relationship between reflection light intensity and azimuth angle and polar angle, regarding a reflection plate according to the embodiment
  • FIG. 8 shows a protruding pattern having an equilateral triangle basic figure
  • FIG. 9 is a graph showing the relationship between line width and thickness of side
  • FIG. 10 is a graph showing the relationship between polar angle and reflectivity at an azimuth angle of 180 degrees
  • FIGS. 11A and 11B are graphs showing the relationship between polar angle and reflectivity in a case where line width is varied
  • FIGS. 12A to 12 C are graphs showing the relationship between polar angle and reflectivity in a case where length of side is varied
  • FIGS. 13A and 13B are graphs showing the relationship between polar angle and reflectivity in a case where flattening ratio is varied
  • FIG. 14 shows a protruding pattern having an isosceles triangle basic figure
  • FIGS. 15A and 15B are graphs showing the relationship between polar angle and reflectivity in a case where randomness is varied
  • FIGS. 16A and 16B are graphs showing the relationship between polar angle and reflectivity in a case where different mask patterns are used;
  • FIG. 17 is a graph showing the relationship between azimuth angle and reflectivity in a case where the thickness of the organic insulation layer is varied;
  • FIGS. 18A to 18 C arc diagrams showing steps of manufacturing a lower substrate according to the second embodiment of the invention.
  • FIG. 19 is a graph showing the relationship between azimuth angle and reflectivity in a case where luminous exposure is varied
  • FIG. 20 shows a semi-transparent type liquid crystal display device according to the other embodiment of the invention.
  • FIG. 21 is a plan view showing conventional protruding patterns
  • FIG. 22 is a diagram for explaining a polar angle and an azimuth angle.
  • FIG. 23 is a graph showing the relationship between polar angle and reflection light intensity in a case where the protruding patterns shown in FIG. 21 arc used.
  • a reflection type liquid crystal display device is an active matrix type liquid crystal display device having a switching element such as a thin film transistor (TFT) in each pixel.
  • TFT thin film transistor
  • FIG. 1 is a cross section of a unit pixel area of the reflection type liquid crystal display device according to this embodiment.
  • the reflection type liquid crystal display device 10 comprises a lower substrate 11 , an opposing substrate 12 which is set opposite from the lower substrate 11 , and a liquid crystal layer 13 which is sandwiched between the lower substrate 11 and the opposing substrate 12 .
  • the lower substrate 11 includes an insulation substrate 14 , an insulation protection film 15 , a TFT 16 , a first insulation layer 17 , protruding patterns 18 , a second insulation layer 19 , and a reflection electrode 20 .
  • the insulation protection film 15 made of an inorganic or organic insulation material is deposited on the insulation substrate 14 .
  • the TFT 16 which serves as a switching element is formed on the insulation protection film 15 .
  • the TFT 16 comprises a gate electrode 16 a formed on the insulation substrate 14 , a semiconductor layer 16 b which is laid just above the gate electrode 16 a via the insulation protection film 15 , and a drain electrode 16 c and a source electrode 16 d respectively connected to a drain area and a source area in a non-illustrated semiconductor layer.
  • Transistors other than a TFT a diode such as MTM may be used as the switching element.
  • the first insulation layer 17 is made of an inorganic or organic insulation material, and is formed to have predetermined patterns on the insulation protection film 15 on which the TFT 16 is formed.
  • the protruding patterns 18 are made of a resin material, and are formed on the first insulation layer 17 and the source electrode 16 d .
  • the protruding patterns 18 are formed into a plurality of line-shaped patterns, as will be described later.
  • the second insulation layer 19 is formed to cover the protruding patterns 18 .
  • the second insulation layer 19 is made of a resin material.
  • a contact hole 21 at the bottom of which the source electrode 16 d is exposed, is formed in the second insulation layer 19 .
  • the surface of the second insulation layer 19 is wavy (uneven) due to the protruding patterns 18 thereunder.
  • the reflection electrode 20 is made of a conductive material such as aluminum, and is formed on the second insulation layer 19 including the contact hole 21 .
  • the reflection electrode 20 is connected to the source electrode 16 d of the TFT 16 through the contact hole 21 , so as to function as a pixel electrode and a light reflection layer.
  • the surface of the reflection electrode 20 is also wavy, due to the protruding patterns 18 and the second insulation layer 19 .
  • a gate terminal 22 is formed on the insulation substrate 14 , and a drain terminal 23 is formed on the insulation protection film 15 which covers the gate terminal 22 .
  • the opposing substrate 12 includes a color filter 25 and a transparent electrode 24 which are sequentially deposited on one surface of a transparent insulation substrate 26 .
  • a polarizing plate 27 is formed on the other surface of the insulation substrate 26 .
  • the liquid crystal layer 13 is formed using a TN (Twisted Nematic) method, an STN (Super Twisted Nematic) method, a one polarizing plate method, a GH (Guest Host) method, a PDLC (Polymer Dispersed Liquid Crystal) method, a cholesteric method, or the like.
  • the liquid crystal layer 13 is provided with a predetermined orientation.
  • incident light Li coming from outside of the opposing substrate 12 through the polarizing plate 27 goes through the insulation substrate 26 , the color filter 25 , the transparent electrode 24 , and the liquid crystal layer 13 , and finally reaches the surface of the reflection electrode 20 .
  • the surface of the reflection electrode 20 is wavy due to the protruding patterns 18 , thus the incident light Li is reflected in accordance with a directivity influenced by the waves.
  • the reflection light Lr returns to the outside as display light, going back through the liquid crystal layer 13 , the transparent electrode 24 , the color filter 25 , the insulation substrate 26 , and the polarizing plate 27 .
  • FIG. 2A is a diagram exemplarily showing the incident light Li, and the reflection light Lr to be perceived by the viewer.
  • the angles respectively formed by the incident light Li from the light source and the light Lr reflected on the opposing substrate 12 with respect to the normal line direction of the opposing substrate 12 are defined incident angle Ti and reflection angle Tr, respectively. Since the incident light Li is reflected on the wavy surface of the reflection electrode 20 , the incident angle Ti and the reflection angle Tr take different values.
  • FIG. 23 is a diagram exemplarily showing reflection of the incident light Li′ coming to a point A which exists on wavy surface of the reflection electrode 20 .
  • the incident light Li′ comes to the point A
  • the light is reflected on the contact plane at the point A of the reflection electrode 20 .
  • the reflection light Lr′ is reflected in a direction determined by the normal line direction at the point A as a symmetry axis to have the same angle as that of the incident light Li′ with respect to the symmetry axis.
  • an angle formed by the contact plane of the reflection electrode 20 at the point A and the lower substrate 11 is defined as a tilt angle ⁇ at the point A.
  • the distributions of reflection direction and reflection light intensity of the reflection light Lr depend upon the distributions of the tilt angle ⁇ and normal line direction of the convex and concave patterns of the reflection electrode 20 .
  • FIGS. 3A to 3 F are explanatory diagrams showing manufacturing steps of the reflection type liquid crystal display device 10 shown in FIG. 1, or the lower substrate 11 in particular.
  • the TFT serving as a switching element is formed on the insulation substrate 14 first.
  • the gate electrode 16 a is formed on the insulation substrate 14 , and then the insulation protection film 15 is formed so as to cover the insulation substrate 14 and the gate electrode 16 a .
  • the semiconductor layer 16 b having a drain area and source area (not illustrated) is formed on the insulation protection film 15 by etching, impurity implantation, etc. (FIG. 3A).
  • the drain electrode 16 c and the source electrode 16 d which are to be connected respectively to the drain area and the source area are formed on the insulation protection film 15 .
  • the first insulation layer 17 is formed on the TFT 16 (FIG. 3B).
  • the resin is patterned using a predetermined photolithography technique and an etching technique.
  • the protruding patterns 18 are formed, as shown in FIG. 3C.
  • a baking process is applied to the protruding patterns 18 .
  • the shapes of the protruding patterns 18 are rounded by the baking process, as shown in FIG. 3D.
  • the protruding patterns 18 are formed into a shape of line. Adjacent protruding patterns 18 form a concave portion having a shape of a basic figure, especially, a closed figure such as a triangle.
  • the formation of the line-shaped protruding patterns 18 is carried out with the use of a mask pattern as shown in FIG. 4.
  • a reflection plate having such line-shaped protruding patterns 18 is disclosed in the Japanese Patent Application No. 2001-55229 filed by the applicant of the present patent application.
  • the reflection electrode 20 to be formed in a later step will have concave and protruding portions of a predetermined shape on its surface.
  • the lower substrate 11 which achieves reflection light intensity that depends upon the azimuth angle, and which enables a highly directional light reflection with increasing the light to be reflected toward a specific direction.
  • the pattern of an intersection (shown in FIG. 5A) of some line-shaped protruding portion forming portions may be replaced with modified mask patterns shown in FIGS. 5B and 5C.
  • modified mask patterns it is possible to reduce the difference in film thickness between the vertex and side of the basic figure.
  • the protruding patterns are formed using the mask pattern shown in FIG. 5A
  • the vertexes of the basic figure will become broadened and rounded as shown in FIG. 6A, due to an error in the resolution of exposure and the resolution of a resist.
  • heights (film thickness) of the patterns will not be uniform, such that the vertex portion is higher than the side portion.
  • the second insulation layer 19 is deposited on the protruding patterns 18 where the heights of the vertex portions and the side portions are not uniform, if the areas around the vertex portions are designed to be provided with appropriate tilt angles, the second insulation layer 19 may be flat in the areas near the side portions (FIG. 6C). On the other hand, if the areas near the side portions are designed to be provided with appropriate tilt angles, the vertex portions may project from the second insulation layer 19 (FIG. 6D). Therefore, if there is difference in the heights of the protruding patterns 18 , efficient light reflection cannot be obtained, and unevenness of light reflection may be caused.
  • the protruding portion forming portions have, at the intersection thereof, narrower width of line.
  • the line width of the protruding portion forming portions is set to about 4 ⁇ m along the entire line, while in the mask pattern shown in FIG. 5B, the line width is set to about 2 ⁇ m at and near the intersections.
  • the lines are removed at and near the intersections.
  • an aluminum (Al) thin film is formed on the second insulation layer 19 including the contact hole 21 .
  • the reflection electrode 20 as a reflection pixel electrode is formed by patterning (FIG. 3F).
  • the lower substrate 11 as a reflection plate is completed.
  • Spacers are placed between thus formed lower substrate 11 and the opposing substrate 12 formed by depositing the color filter 25 , etc. on the insulation substrate 26 .
  • a space (cell) formed by the spacers is filled with resin and sealed.
  • the polarizing plate 27 is adhered onto the surface of the opposing substrate 12 to complete the reflection type liquid crystal display device 10 shown in FIG. 1.
  • the reflection light intensity depends upon the azimuth angle, and thus light to be reflected toward a specific direction can be increased.
  • FIG. 7 shows a result of a research to test the azimuth angle and reflection light intensity when light is radiated on the lower substrate 11 (reflection plate) having the above structure, from a direction of ⁇ 30-degree polar angle.
  • the polar angle is the angle ⁇ 1 shown in FIG. 22 measured from the normal line direction of the reflection plate
  • the azimuth angle is the angle ⁇ 2 measured in the plane parallel to the reflection layer.
  • FIG. 7A and FIG. 7B respectively show the relationship between polar angle and reflection light intensity and the relationship between the azimuth angle and reflection light intensity, which are obtained when light is radiated to the lower substrate 11 (reflection plate) having the above described structure from a direction of ⁇ 30 degree polar angle.
  • the polar angle is an angle ⁇ 1 measured from the normal line direction of the reflection plate
  • the azimuth angle is an angle ⁇ 2 measured in the plane parallel to the reflection plate.
  • the reflection light intensity shows a peak near the polar angle of 0 to 10 degrees, other than in the normal reflection direction (polar angle of 30 degrees).
  • the reflection light intensity changes regularly, in response to the change of azimuth angle.
  • the reflection light intensity shows peaks at the polar angles of 0 degree, 60 degrees, and 120 degrees. And as the polar angle becomes larger, for example, from 10 degrees to 20 degrees, the peak becomes lower.
  • the reflection characteristic near the polar angle Of 0 to 10 degrees is mainly caused by the side portions of the triangles, and the reflection characteristic of the component near the normal reflection equal to or larger than 20 degrees is, due to the flat portion near the center of the triangles. Accordingly, it can be considered that it is effective to increase the number of sides orthogonal to the measuring direction, in order to improve the reflectivity near the polar angle of 0 to 30 degrees when the azimuth angle is at 180 degrees (when the azimuth angle faces toward the front).
  • FIG. 9 shows the relationship between the line width of the basic figure (triangle) and the thickness of the vertex and side portions, in a case where the basic figure is formed by coating a resin film having 2.35 ⁇ m thickness, patterning the film with the use of the mask patterns shown in FIGS. 5A and 5B, and baking the film.
  • the thickness of the vertex portion is 1.90 ⁇ m.
  • the thickness of the vertex portion is 1.60 ⁇ m. It is turned out from this result that in the case where the modified mask pattern is used, difference in the thickness between the vertex and the side can be reduced.
  • the line width should be preferably set to about 5 ⁇ m, so that the thickness of the side portion can be about 1.3 ⁇ m.
  • a spectrophotometer IMUC (LCD7000) made by Otsuka Electronics Co., Ltd. is used. Further in this measurement, the incident light is caused to be radiated onto one vertex of the triangle, which is the basic figure. And the spectrophotometer is placed horizontally to one side of the triangle. The measurement result at the 180-degree azimuth angle is shown in FIG. 10.
  • the reflection light intensity at the 0-degree polar angle is stronger than the reflection light intensity at the 90-degree azimuth angle (not shown by the data). The reason for this is considered to be that in case of the 180-degree azimuth angle, local maximum of the reflection light intensity appears near the 5-degree polar angle, due to azimuth-angle-dependent light reflection as shown in FIGS. 7A and 7B.
  • the reflection light intensity at the 0-degree polar angle can be strengthened if the local maximum of the reflection light intensity appears near 0 to 10 degrees.
  • FIGS. 11A and 11B respectively show results of measuring the relationship between polar angle and reflection light intensity at an azimuth angle of 180 degrees, where the line width of the basic figure is set to 3 ⁇ m in FIG. 11A, and 4 ⁇ m in FIG. 11B.
  • the conditions for measurement are the same as those in the example 2.
  • the film thickness of the protruding patterns 18 at the sides of the basic figure is 1.3 ⁇ m after being baked.
  • the film thickness of the second insulation layer 19 is 1.5 ⁇ m, and the length of the sides of the basic figure is 24 ⁇ m on the average.
  • the reflection light intensity has a plurality of local maximum values, in each of the graphs shown in FIG. 11A and 11B. From FIG. 11A, it is known that the reflection light intensity reaches local maximum near the polar angle of 15 degrees in the case where the line width is 3 ⁇ m. On the other hand, it is known from FIG. 11B that the reflection light intensity reaches local maximum near the polar angle of 0 degree in addition to the polar angle of 15 degrees, in the case where the line width is 4 ⁇ m. Since the reflection light intensity reaches local maximum near the polar angle of 0 degree, it is turned out that the reflection light intensity at the polar angle of 0 degree is stronger, in the case where the line width is 4 ⁇ m.
  • FIGS. 12A to 12 C respectively show results of measuring the relationship between polar angle and reflection light intensity, where the length of a side of a triangle (basic figure) is 24 ⁇ m in FIG. 12A, 20 ⁇ m in FIG. 12B, and 16 ⁇ m in FIG. 12C.
  • the conditions for measurement are the same as those in the example 2.
  • the film thickness of the protruding patterns 18 at the sides of the basic figure is 1.3 ⁇ m after being baked.
  • the film thickness of the second insulation layer 19 is 1.5 ⁇ m, and the line width of the basic figure is 5 ⁇ m.
  • the reflection light intensity has a plurality of local maximum values, in each of the graphs shown in FIGS. 12A to 12 C.
  • FIGS. 12A to 12 C it is apparent that the larger the length of the side is, the polar angle, at which the local maximum of the reflection light intensity appears, becomes closer to 0 degree. That is, it is turned out that the larger the length of the side is, the stronger the reflection light intensity at the polar angle of 0 degree becomes.
  • FIGS. 13A and 13B respectively show results of measuring the relationship between polar angle and reflection light intensity, where the flattening ratio of a triangle is 1.0 in FIG. 13A, and 0.8 in FIG. 13B.
  • ratio between base and altitude of an equilateral triangle represents a flattening ratio of 1.0 (as illustrated in FIG. 8)
  • the ratio between base and altitude of an isosceles triangle having an altitude of 0.8 times as high as that of an isosceles triangle represents a flattening ratio of 0.8 (as illustrated in FIG. 14).
  • the conditions for measurement are the same as those in the example 2.
  • the film thickness of the protruding patterns 18 at the sides of the triangle is 1.3 ⁇ m after being baked.
  • the film thickness of the second insulation layer 19 is 1.5 ⁇ m
  • the length of the sides of the triangle is 24 ⁇ m on the average
  • the line width is 5 ⁇ m.
  • the reflection light intensity has a plurality of local maximum values, in each of the graphs shown in FIGS. 13A and 13B.
  • FIGS. 13A and 13B it is apparent that the reflection light intensity at the polar angle of 0 degree is stronger in a case where a triangle having a flattening ratio of 0.8 is formed, than in a case where a triangle having a flattening ratio of 1.0 is formed.
  • the reason for this result is considered to be that there are more line-shaped protruding patterns 18 that are arranged horizontally to the spectrophotometer within a specific area in the case of the flattening ratio of 0.8 than in the case of the flattening ratio of 1.0.
  • the flattening ratio is preferably 0.5 to 0.8.
  • FIGS. 15A and 15B respectively show results of measuring the relationship between polar angle and reflection light intensity, where the randomness when arranging the basic figures is 0.5 in FIG. 15A, and 0.75 in FIG. 15B.
  • this state is defined as having randomness of 0.0
  • this state is defined as having randomness of 1.0.
  • the conditions for measurement are the same as those in the example 2.
  • the film thickness of the protruding patterns 18 at the sides of the basic figure is 1.3 ⁇ m after being baked.
  • the film thickness of the second insulation layer 19 is 1.5 ⁇ m, the length of the sides of the basic figure is 24 ⁇ m on the average, and the line width is 5 ⁇ m.
  • the reflection light intensity has a plurality of local maximum values, in each of the graphs shown in FIGS. 15A and 15B.
  • FIGS. 15A and 15B it is apparent that the reflection light intensity at the polar angle of 0 degree is stronger in a case where the randomness is 0.5, than in a case where the randomness is 0.75.
  • the reason for this result is considered to be that the number of the line-shaped protruding patterns 18 that are arranged horizontally to the spectrophotometer is smaller in a case where the randomness is large.
  • the reflection light might cause interference, and thus the characteristic of the reflection plate might be deteriorated
  • FIGS. 16A and 16B respectively show results of measuring the relationship between polar angle and reflection light intensity, where the modified mask pattern shown in FIG. 5B is applied to the vertexes of the basic figure in FIG. 16A, and the unmodified mask pattern shown in FIG. 5A is applied to the vertexes of the basic figure in FIG. 16B.
  • the conditions for measurement are the same as those in the example 2.
  • the film thickness of the protruding patterns 18 at the sides of the basic figure is 1.3 ⁇ m after being baked
  • the film thickness of the second insulation layer 19 is 1.5 ⁇ m, the length of the sides of the basic figure is 24 ⁇ m on the average, and the line width is 5 ⁇ m.
  • the reflection light intensity has a plurality of local maximum values, in each of the graphs shown in FIGS. 16A and 16B.
  • FIGS. 16A and 16B it is apparent that the reflection light intensity at the polar angle of 0 degree is stronger in the case where the modified mask pattern shown in FIG. 5B is used, than in the case where the unmodified mask pattern is used.
  • the difference in height between the vertex and side portions of the protruding patterns 18 is reduced.
  • the shape of the vertexes is prevented from being circular as shown in FIG. 21, when viewed in a plan, and the directivity (anisotropy) of the reflection light intensity is enhanced toward the direction of azimuth angle.
  • FIG. 17 shows the result when the coating thickness of the second insulation layer 19 is 1.5 ⁇ m, 2.0 ⁇ m or 3.0 ⁇ m, on the condition that the basic figure is a triangle, the flattening ratio is 0.8, the line width is 0.4 ⁇ m, the length of a side is 28 ⁇ m, the thickness of the protruding pattern 18 is 2.0 ⁇ m and the randomness is 0.75.
  • the reflection light intensity reaches local maximum near the polar angle of 0 to 10 degrees. Accordingly, when the display device is used in this range of angles, high reflectivity can be obtained if the reflection plate is designed in this way.
  • the change of the reflection light intensity has a positive slope in the range of polar angle of 10 to 20 degrees.
  • the slope of the change of the reflection light intensity becomes smaller, as the polar angle becomes larger.
  • the slope of the change of the reflection light intensity becomes larger, as the polar angle becomes larger. Accordingly, in the case where the display device is used in this range of polar angle, high reflectivity can be obtained if the reflection plate is designed in this way.
  • the reflection light intensity is changed by the protruding patterns 18 which form the basic figure, in accordance with the azimuth angle. Therefore, it has been made sure that the alteration of the reflection light intensity in relation to the polar angle takes a plurality or local maximum values, and the reflection light intensity at the polar angle of 0 degree can be strengthened, if one of such local maximum values appears near the polar angle of 0 to 10 degrees.
  • the lower substrate 11 reflection plate
  • the lower substrate 11 can increase the amount of light to be reflected toward the direction of 0-degree polar angle, i.e., toward the viewer, and thus can improve the contrast.
  • the thickness of the second insulation layer 19 can freely be set to some extent, it is possible to select the thickness of the second insulation layer 19 , so that the light reflection intensity toward the normal line direction (direction of 0-degree polar angle) can be strengthened.
  • FIG. 18C shows the structure of a reflection plate (lower substrate 11 ) according to a second embodiment.
  • the lower substrate 11 according to the second embodiment forms the wavy surface of the reflection electrode 20 , by the waves formed on one interlayer insulation film 30 , unlike the first embodiment.
  • the interlayer insulation film 30 is made of photosensitive resin, and its concave and protruding patterns are formed at the same time as the contact hole 21 is formed, by changing the luminous exposure of ultra violet rays (UV), as will be described later.
  • UV ultra violet rays
  • an organic resin layer 31 made of, for example, positive photosensitive resin is formed by coating on the first insulation layer 17 and the like in the state shown in FIG. 3B.
  • the organic resin layer 31 is exposed and developed to form the contact hole 21 , and at the same time, concave and protruding patterns are formed on the surface of the organic resin layer 31 , as shown in FIG. 18B. That is, the area where the contact hole 21 is formed, and the areas where the concave and protruding patterns are formed, are exposed by using different masks and by different luminous exposures.
  • the luminous exposure (UV1) for the areas for the concave and protruding patterns is 10 to 50% of the luminous exposure (UV2) of the area for the contact hole.
  • the dissolution speed of a positive photosensitive resin depends largely upon the decomposition ratio of a photosensitive agent. Using this characteristic, by changing the decomposition ratios for the areas for the concave and protruding patterns and the area for the contact hole, it is possible to generate a difference in dissolution speed between the resins of the both areas. Accordingly, it is possible to form the deep contact hole 21 and the shallow patterns, by developing the organic resin layer 31 during a period of time enough to dissolve (resolve) the layer to form the contact hole 21 .
  • Patterning of the organic resin layer 31 may be carried out by using a same mask, if the mask is a so called half tone mask, that is, if the mask has different light transmittance for the area for the contact hole 21 , and the areas for the concave and protruding patterns.
  • the organic resin layer 31 is patterned, it is baked to form an interlayer insulation film 30 . Then, a metal film made of aluminum or the like is formed, and then patterned. Thus, a reflection electrode 20 is formed. As a result, the lower substrate 11 shown in FIG. 18C is completed.
  • FIG. 19 shows results obtained when the film thickness of the organic resin layer 31 is unchanged, and the luminous exposure for the areas for the concave and protruding patterns is set to 25%, 20%, and 15% of the luminous exposure of the area for the contact hole.
  • the conditions for measurement are the same as those in the above example 3-6.
  • the reflection light intensity reaches local maximum near the polar angle of 0 to 10 degrees. Accordingly, if the display device is used in this range of polar angle, high reflectivity can be obtained if the lower substrate is designed as described above.
  • the change of the reflection light intensity has a positive slope in the range of polar angle of 10 to 20 degrees. And in the range of polar angle of 10 to A degrees (10 ⁇ A ⁇ 20), the slope of the change of the reflection light intensity becomes smaller, as the polar angle becomes larger. Further, in the range of polar angle of A to 20 degrees, the slope of the change of the reflection light intensity becomes larger, as the polar angle becomes larger. Accordingly, if the display device is used in this range of polar angle, high reflectivity can be obtained if the lower substrate is designed as described above.
  • the reflection plate having the concave and protruding patterns according to the first and second embodiments achieves reflection light intensity which is dependent upon azimuth angle. And the change of the reflection light intensity in relation to the polar angle shows a plurality of local maximum values. High reflection light intensity at the polar angle of 0 degree is realized when the local maximum appears near the polar angle of 0 to 10 degrees.
  • the present invention can be applied to a so-called semi-transparent type liquid crystal display device, as disclosed in Japanese Patent No. 2955277.
  • the present invention can be applied to a liquid crystal display device shown in FIG. 20, which comprises a transparent electrode including a transparent region and a reflection region, and a reflection plate, and thus has the function of a transparent liquid crystal display device and the function of a reflection type liquid crystal display device.

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  • Physics & Mathematics (AREA)
  • Nonlinear Science (AREA)
  • Mathematical Physics (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Liquid Crystal (AREA)
  • Optical Elements Other Than Lenses (AREA)
US10/176,599 2001-06-22 2002-06-24 Reflection plate, manufacturing method thereof, liquid crystal display device, and manufacturing method thereof Abandoned US20020196396A1 (en)

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US20070182907A1 (en) * 2003-03-28 2007-08-09 Katsufumi Ohmuro Liquid crystal display device
US20070263288A1 (en) * 2004-12-10 2007-11-15 Yusuke Tsubota Diffusive Reflecting Structure and Its Manufacturing Method, and Display Device Using It
US20140168916A1 (en) * 2012-12-19 2014-06-19 Sony Corporation Moisture-proof structure and display device
US11397348B2 (en) * 2017-05-23 2022-07-26 Beijing Boe Optoelectronics Technology Co., Ltd. Array substrate having convex component, method for fabricating the same, liquid crystal display panel, and display device

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TW594230B (en) 2002-11-12 2004-06-21 Prime View Int Co Ltd Reflective plate of reflective-type liquid crystal display and method for producing the same
US7301587B2 (en) * 2003-02-28 2007-11-27 Nec Corporation Image display device and portable terminal device using the same
JP2005308789A (ja) * 2004-04-16 2005-11-04 Alps Electric Co Ltd 反射体及びこれを用いた液晶表示装置
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CN102087435B (zh) * 2009-12-02 2012-05-30 上海天马微电子有限公司 反射装置和应用该反射装置的液晶显示装置
KR102015799B1 (ko) 2019-06-13 2019-08-29 이종필 글로브 박스형 펫 드라이룸
CN111243945B (zh) * 2020-01-15 2022-11-22 合肥维信诺科技有限公司 一种图形化、蚀刻、显示面板的制作方法及显示面板
TWI748875B (zh) * 2021-02-19 2021-12-01 友達光電股份有限公司 凸塊結構及液晶顯示器

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US20050012878A1 (en) 2005-01-20
US7042539B2 (en) 2006-05-09
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KR100483979B1 (ko) 2005-04-18

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