US11114244B2 - Dielectric composition and electronic component - Google Patents
Dielectric composition and electronic component Download PDFInfo
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- US11114244B2 US11114244B2 US16/783,209 US202016783209A US11114244B2 US 11114244 B2 US11114244 B2 US 11114244B2 US 202016783209 A US202016783209 A US 202016783209A US 11114244 B2 US11114244 B2 US 11114244B2
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- dielectric composition
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- dielectric
- complex oxide
- nitrogen
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- 239000000203 mixture Substances 0.000 title claims abstract description 68
- 238000002441 X-ray diffraction Methods 0.000 claims abstract description 31
- 229910052721 tungsten Inorganic materials 0.000 claims abstract description 24
- 239000010937 tungsten Substances 0.000 claims abstract description 24
- 239000010955 niobium Substances 0.000 claims description 21
- 239000010936 titanium Substances 0.000 claims description 18
- 229910052758 niobium Inorganic materials 0.000 claims description 12
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 11
- 229910052788 barium Inorganic materials 0.000 claims description 11
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 claims description 11
- 229910052719 titanium Inorganic materials 0.000 claims description 11
- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical compound [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 claims description 10
- DSAJWYNOEDNPEQ-UHFFFAOYSA-N barium atom Chemical compound [Ba] DSAJWYNOEDNPEQ-UHFFFAOYSA-N 0.000 claims description 10
- 229910052726 zirconium Inorganic materials 0.000 claims description 10
- 239000011575 calcium Substances 0.000 claims description 7
- OYPRJOBELJOOCE-UHFFFAOYSA-N Calcium Chemical compound [Ca] OYPRJOBELJOOCE-UHFFFAOYSA-N 0.000 claims description 5
- 229910052791 calcium Inorganic materials 0.000 claims description 5
- 229910052712 strontium Inorganic materials 0.000 claims description 5
- CIOAGBVUUVVLOB-UHFFFAOYSA-N strontium atom Chemical compound [Sr] CIOAGBVUUVVLOB-UHFFFAOYSA-N 0.000 claims description 5
- 229910052715 tantalum Inorganic materials 0.000 claims description 5
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 claims description 5
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 105
- 239000001257 hydrogen Substances 0.000 description 54
- 229910052739 hydrogen Inorganic materials 0.000 description 54
- 229910052757 nitrogen Inorganic materials 0.000 description 52
- 150000002431 hydrogen Chemical class 0.000 description 50
- 230000006870 function Effects 0.000 description 32
- 239000010410 layer Substances 0.000 description 30
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 23
- 239000001301 oxygen Substances 0.000 description 23
- 229910052760 oxygen Inorganic materials 0.000 description 23
- 239000003985 ceramic capacitor Substances 0.000 description 21
- 125000004429 atom Chemical group 0.000 description 15
- 239000000843 powder Substances 0.000 description 14
- 238000010304 firing Methods 0.000 description 13
- 239000011230 binding agent Substances 0.000 description 10
- 239000002994 raw material Substances 0.000 description 10
- 239000004020 conductor Substances 0.000 description 8
- 230000007547 defect Effects 0.000 description 7
- 238000000137 annealing Methods 0.000 description 6
- 238000004519 manufacturing process Methods 0.000 description 6
- 238000005259 measurement Methods 0.000 description 6
- 239000002904 solvent Substances 0.000 description 6
- 229910045601 alloy Inorganic materials 0.000 description 5
- 239000000956 alloy Substances 0.000 description 5
- 230000000694 effects Effects 0.000 description 5
- 239000007789 gas Substances 0.000 description 5
- 229910052759 nickel Inorganic materials 0.000 description 5
- VTYYLEPIZMXCLO-UHFFFAOYSA-L Calcium carbonate Chemical compound [Ca+2].[O-]C([O-])=O VTYYLEPIZMXCLO-UHFFFAOYSA-L 0.000 description 4
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 4
- JRPBQTZRNDNNOP-UHFFFAOYSA-N barium titanate Chemical compound [Ba+2].[Ba+2].[O-][Ti]([O-])([O-])[O-] JRPBQTZRNDNNOP-UHFFFAOYSA-N 0.000 description 4
- 229910002113 barium titanate Inorganic materials 0.000 description 4
- 239000003990 capacitor Substances 0.000 description 4
- 229910052802 copper Inorganic materials 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 239000003989 dielectric material Substances 0.000 description 4
- 238000002474 experimental method Methods 0.000 description 4
- 239000003574 free electron Substances 0.000 description 4
- 238000000034 method Methods 0.000 description 4
- 238000005457 optimization Methods 0.000 description 4
- 239000002270 dispersing agent Substances 0.000 description 3
- 239000002003 electrode paste Substances 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 230000010287 polarization Effects 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 239000000654 additive Substances 0.000 description 2
- 239000010953 base metal Substances 0.000 description 2
- WMWLMWRWZQELOS-UHFFFAOYSA-N bismuth(iii) oxide Chemical compound O=[Bi]O[Bi]=O WMWLMWRWZQELOS-UHFFFAOYSA-N 0.000 description 2
- 229910000019 calcium carbonate Inorganic materials 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- BDAGIHXWWSANSR-NJFSPNSNSA-N hydroxyformaldehyde Chemical compound O[14CH]=O BDAGIHXWWSANSR-NJFSPNSNSA-N 0.000 description 2
- 238000009413 insulation Methods 0.000 description 2
- 239000011229 interlayer Substances 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 229910000510 noble metal Inorganic materials 0.000 description 2
- 125000004430 oxygen atom Chemical group O* 0.000 description 2
- RVTZCBVAJQQJTK-UHFFFAOYSA-N oxygen(2-);zirconium(4+) Chemical compound [O-2].[O-2].[Zr+4] RVTZCBVAJQQJTK-UHFFFAOYSA-N 0.000 description 2
- 229910052763 palladium Inorganic materials 0.000 description 2
- 239000004014 plasticizer Substances 0.000 description 2
- 229910052697 platinum Inorganic materials 0.000 description 2
- 239000011347 resin Substances 0.000 description 2
- 229920005989 resin Polymers 0.000 description 2
- 239000007858 starting material Substances 0.000 description 2
- 229910000018 strontium carbonate Inorganic materials 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- 229910001928 zirconium oxide Inorganic materials 0.000 description 2
- QPLDLSVMHZLSFG-UHFFFAOYSA-N CuO Inorganic materials [Cu]=O QPLDLSVMHZLSFG-UHFFFAOYSA-N 0.000 description 1
- 229910000807 Ga alloy Inorganic materials 0.000 description 1
- 229910001252 Pd alloy Inorganic materials 0.000 description 1
- 239000004372 Polyvinyl alcohol Substances 0.000 description 1
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 1
- 239000007864 aqueous solution Substances 0.000 description 1
- AYJRCSIUFZENHW-UHFFFAOYSA-L barium carbonate Chemical compound [Ba+2].[O-]C([O-])=O AYJRCSIUFZENHW-UHFFFAOYSA-L 0.000 description 1
- 238000004364 calculation method Methods 0.000 description 1
- 150000004649 carbonic acid derivatives Chemical class 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 239000011247 coating layer Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 229910052681 coesite Inorganic materials 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 230000001276 controlling effect Effects 0.000 description 1
- 230000002596 correlated effect Effects 0.000 description 1
- 229910052906 cristobalite Inorganic materials 0.000 description 1
- 229910001873 dinitrogen Inorganic materials 0.000 description 1
- 238000005315 distribution function Methods 0.000 description 1
- 238000011156 evaluation Methods 0.000 description 1
- 230000001747 exhibiting effect Effects 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 150000004679 hydroxides Chemical class 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 239000003112 inhibitor Substances 0.000 description 1
- 229910010272 inorganic material Inorganic materials 0.000 description 1
- 239000011147 inorganic material Substances 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- JEIPFZHSYJVQDO-UHFFFAOYSA-N iron(III) oxide Inorganic materials O=[Fe]O[Fe]=O JEIPFZHSYJVQDO-UHFFFAOYSA-N 0.000 description 1
- 238000004898 kneading Methods 0.000 description 1
- VASIZKWUTCETSD-UHFFFAOYSA-N manganese(II) oxide Inorganic materials [Mn]=O VASIZKWUTCETSD-UHFFFAOYSA-N 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 239000011812 mixed powder Substances 0.000 description 1
- URLJKFSTXLNXLG-UHFFFAOYSA-N niobium(5+);oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Nb+5].[Nb+5] URLJKFSTXLNXLG-UHFFFAOYSA-N 0.000 description 1
- 150000002823 nitrates Chemical class 0.000 description 1
- 150000002902 organometallic compounds Chemical class 0.000 description 1
- 150000003891 oxalate salts Chemical class 0.000 description 1
- BPUBBGLMJRNUCC-UHFFFAOYSA-N oxygen(2-);tantalum(5+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5] BPUBBGLMJRNUCC-UHFFFAOYSA-N 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 229920002451 polyvinyl alcohol Polymers 0.000 description 1
- 238000010405 reoxidation reaction Methods 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
- VSZWPYCFIRKVQL-UHFFFAOYSA-N selanylidenegallium;selenium Chemical compound [Se].[Se]=[Ga].[Se]=[Ga] VSZWPYCFIRKVQL-UHFFFAOYSA-N 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 230000003595 spectral effect Effects 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- 229910052682 stishovite Inorganic materials 0.000 description 1
- 229910052718 tin Inorganic materials 0.000 description 1
- 229910052905 tridymite Inorganic materials 0.000 description 1
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Definitions
- the present invention relates to a dielectric composition and an electronic component including a dielectric layer configured by the dielectric composition.
- a large number of electronic components such as a multilayer ceramic capacitor which utilizes dielectric characteristics expressed by a dielectric are mounted.
- a material configuring the dielectric of the above electronic component a dielectric material
- a barium titanate-based dielectric composition is widely used.
- Patent Document 1 a dielectric composition obtained by substituting a part of Ba, Ti, and Nb with other elements in a ferroelectric material represented by a general formula Ba 6 Ti 2 Nb 8 O 30 is disclosed as a dielectric composition other than the barium titanate-based dielectric composition.
- Patent Document 1 Japanese Patent Laid-Open No. 3-274607
- a dielectric material For a dielectric material, high dielectric characteristics (for example, a high relative permittivity) are required.
- the dielectric characteristics are characteristics based on the premise that the dielectric material is an insulator.
- the dielectric material is required to have a high resistivity so that the dielectric composition does not become a semiconductor or a conductor.
- the present invention is completed in view of the aforementioned situation, and aims to provide a dielectric composition which can improve a relative permittivity while maintaining resistivity, and an electronic component including dielectric layers configured by the dielectric composition.
- the dielectric composition of the present invention is a dielectric composition of the present invention.
- a dielectric composition including a complex oxide represented by a general formula A a B b C 4 O 15+ ⁇ as a main component, wherein
- A includes at least barium
- B includes at least zirconium
- C includes at least niobium
- the complex oxide has a tungsten bronze structure
- a dielectric composition including a complex oxide represented by a general formula A a B b C 4 O 15+ ⁇ as a main component, wherein
- A includes at least barium
- B includes at least zirconium
- C includes at least niobium
- the complex oxide has a tungsten bronze structure
- an X-ray diffraction peak of a (410) plane of the tungsten bronze structure is splitted into two, and an integrated intensity ratio of an integrated intensity of a high-angle side peak of the X-ray diffraction peak with respect to an integrated intensity of a low-angle side peak of the X-ray diffraction peak is 0.125 or higher.
- A1 includes one or more elements selected from the group consisting of calcium and strontium, “B1” includes titanium, and “C1” includes tantalum; and
- x is 0.50 or lower
- y is 0.25 or lower
- z is 0.50 or lower.
- An electronic component including a dielectric layer containing the dielectric composition according to any one of [1] to [7], and an electrode layer.
- a dielectric composition which can improve the relative permittivity while maintaining resistivity, and an electronic component including dielectric layers configured by the dielectric composition can be provided.
- FIG. 1 is a cross-sectional view of a multilayer ceramic capacitor according to an embodiment of the present invention
- FIG. 2 is a schematic diagram showing a tungsten bronze structure viewed from a c-axis direction;
- FIG. 3A and FIG. 3B are diagrams showing X-ray diffraction peaks of a (410) plane of the tungsten bronze structure.
- FIG. 4A is a diagram showing a result of separating the X-ray diffraction peak of the (410) plane shown in FIG. 3A into two peaks by a Voigt function
- FIG. 4B is a diagram showing a result of separating the X-ray diffraction peak of the (410) plane shown in FIG. 3B into two peaks by a Voigt function.
- the multilayer ceramic capacitor 1 includes an element body 10 having a configuration in which dielectric layers 2 and internal electrode layers 3 are alternately stacked. At both ends of the element body 10 , a pair of external electrodes 4 is formed which is electrically connected to each of the internal electrode layers 3 arranged alternately inside the element body 10 .
- a shape of the element body 10 is not particularly limited and is usually a rectangular parallelepiped shape.
- a dimension of the element body 10 is not particularly limited and may be an appropriate dimension according to the application.
- the dielectric layer 2 is configured by a dielectric composition according to the embodiment described later.
- the thickness of each of the dielectric layers 2 (an interlayer thickness) is not particularly limited and can be arbitrarily set according to desired characteristics, the application or the like. Usually, the interlayer thickness is preferably 100 ⁇ m or less, and more preferably 30 ⁇ m or less.
- the number of stacked dielectric layers 2 is not particularly limited, and is preferably, for example, 20 or more in the embodiment.
- the internal electrode layers 3 are stacked in a manner that each end face is alternately exposed on surfaces of the two opposite ends of the element body 10 .
- a conductive material contained in the internal electrode layer 3 is not particularly limited.
- the conductive material may be a base metal or a noble metal.
- the base metal is not particularly limited, and for example, a known conductive material such as Ni, Ni-based alloy, Cu, Cu-based alloy and the like may be used. Moreover, in Ni, Ni-based alloy, Cu, or Cu-based alloy, various trace components such as P and the like may be contained in an amount of about 1 mass % or less.
- the noble metal is not particularly limited, and a known conductive material such as Pd, Pt, Ag—Pd alloy and the like may be used.
- the internal electrode layer 3 may be formed using a commercially available electrode paste. The thickness of the internal electrode layer 3 may be suitably determined according to the application.
- a conductive material contained in the external electrode 4 is not particularly limited.
- a known conductive material such as Ni, Cu, Sn, Ag, Pd, Pt, Au, an alloy thereof, a conductive resin or the like may be used.
- the thickness of the external electrode 4 may be suitably determined according to the application.
- the dielectric composition according to the embodiment includes, as a main component, a complex oxide containing at least barium (Ba), zirconium (Zr) and niobium (Nb). That is, in the embodiment, the complex oxide is contained in an amount of 80 mass % or more and preferably 90 mass % or more in 100 mass % of the dielectric composition according to the embodiment.
- the complex oxide has a tungsten bronze structure. Specifically, the complex oxide has a tungsten bronze structure with a space group P 4 bm .
- FIG. 2 shows the tungsten bronze structure viewed from a c-axis direction.
- a three-dimensional network is formed in which an oxygen octahedron 51 formed by coordinating six oxygen atoms to an element occupying an M1 site 21 shares vertices with an oxygen octahedron 52 formed by coordinating six oxygen atoms to an element occupying an M2 site 22 .
- elements occupying an A1 site 31 and an A2 site 32 are located in an interstice between the oxygen octahedrons.
- the complex oxide is represented by a general formula A a B b C 4 O 15+ ⁇ .
- A”, “B” and “C” are divided based on a valence. That is, elements other than oxygen contained in the complex oxide are divided into three element groups (“A”, “B”, and “C”) based on the valence.
- A is divalent elements and includes barium.
- B is tetravalent elements and includes zirconium.
- C is pentavalent elements and includes niobium.
- “A” occupies A1 sites and A2 sites in the tungsten bronze structure
- “B” and “C” occupy the M1 sites and the M2 sites.
- Table 1 shows atomic coordinates when zirconium and niobium occupy the M1 sites and M2 sites of Ba 3 ZrNb 4 O 15 at the same ratio.
- the atomic coordinates shown in Table 1 comes from the Inorganic Material Database “AtomWork” of National Institute for Materials Science, [searched on Mar. 11, 2019], the Internet URL: http://crystdb.nims.go.jp/.
- the oxygen octahedron 51 centered on the M1 site is slightly distorted compared with the oxygen octahedron 52 centered on the M2 site.
- Dielectric characteristics for example, the relative permittivity
- C occupies the M1 sites, distortion becomes larger, which is preferable.
- the ratio of “B” in the M2 sites is set to a predetermined value or higher. Specifically, when the total number of atoms occupying the M2 sites is set to 1, the proportion of “B” is 0.250 or higher.
- the proportion of “B” is preferably 0.400 or higher and more preferably, 0.500 or higher.
- the ratio of “B” in the M2 sites By setting the ratio of “B” in the M2 sites within the above range, the relative permittivity tends to be improved as compared with the case in which the ratio of “B” in the M2 sites is low.
- the dielectric characteristics are improved by controlling the shape of the X-ray diffraction peak of a (410) plane of the tungsten bronze structure. Specifically, the dielectric characteristics are improved by splitting the X-ray diffraction peak of the (410) plane into two and making a high-angle side peak relatively large with respect to a low-angle side peak. Note that, the X-ray diffraction peak of the (410) plane of the tungsten bronze structure is usually the second strongest peak, and appears within a range of 28° to 29.5° of a diffraction angle (2 ⁇ ) in an X-ray diffraction measurement using Cu—K ⁇ ray as an X-ray source.
- the dielectric characteristics for example, the relative permittivity
- an integrated intensity (an area) of the low-angle side peak and an integrated intensity (an area) of the high-angle side peak are calculated, and a ratio (an integrated intensity ratio) of the integrated intensity of the high-angle side peak with respect to the integrated intensity of the low-angle side peak is calculated.
- the integrated intensity ratio is 0.125 or higher.
- the integrated intensity ratio is preferably 0.200 or higher, and more preferably 0.250 or higher.
- the diffraction peak of the (410) plane is splitted into two, the tail of the low-angle side peak and the tail of the high-angle side peak usually overlap, and the integrated intensity (the area) of each peak is difficult to calculate. Therefore, in order to calculate the integrated intensity of each peak, in the embodiment, the diffraction peak of the (410) plane is separated using a sum of two Voigt functions.
- the Voigt function is a distribution function obtained by convolution of a Gaussian function and a Lorentz function and is used to approximate an X-ray diffraction peak, a spectral spectrum, and the like.
- the diffraction peak of the (410) plane is represented as a composite peak of two peaks (the low-angle side peak and the high-angle side peak).
- parameters and magnifications of respective Voigt functions are optimized to minimize the square error of the sum of the two Voigt functions and the experimental data.
- Any optimization solver can be used for the optimization.
- the Voigt functions can be calculated by known software.
- a known algorithm or software can be used for the optimization solver.
- FIG. 3A shows an X-ray diffraction chart in which a X-ray diffraction peak of the (410) plane is a single peak
- FIG. 3B shows an X-ray diffraction chart in which an X-ray diffraction peak of the (410) plane is splitted into two
- FIG. 4A and FIG. 4B respectively show results of separating the X-ray diffraction peak of the (410) plane shown in FIG. 3A and FIG. 3B into two diffraction peaks by the Voigt functions.
- the X-ray diffraction peak of the (410) plane P can be separated into the low-angle side peak P 1 and the high-angle side peak P 2 using the Voigt functions. Then, the integrated intensity of the low-angle side peak P 1 and the integrated intensity of the high-angle side peak P 2 are calculated, and the integrated intensity ratio (the integrated intensity of the high-angle side peak P 2 /the integrated intensity of the low-angle side peak P 1 ) can be calculated. Moreover, as is clear from FIG. 4A , when a diffraction peak of the (410) plane P is a single peak, the diffraction peak of the (410) plane P is configure only by the low-angle side peak P 1 . Therefore, the integrated intensity ratio is zero.
- the inventor found that the integrated intensity ratio and the ratio of “B” in the M2 sites are correlated. That is, the splitting of the diffraction peak of the (410) plane correlates with the ratio of “B” in the M2 sites. Specifically, a relationship that the ratio of “B” in the M2 sites the integrated intensity ratio ⁇ 2 is established. That is, the ratio of “B” in the M2 sites can be calculated from the integrated intensity ratio.
- the complex oxide is represented by the general formula A a B b C 4 O 15+ ⁇ .
- “a” in the above general formula represents the proportion of the number of atoms of “A” when four atoms of the element constituting “C” are included in the general formula
- “b” in the above general formula represents the proportion of the number of atoms of “B” when four atoms of the element constituting “C” are included in the general formula.
- “a” is preferably 3.05 or higher, and preferably 3.10 or higher.
- An upper limit of “a” is not limited as long as the effects of the present invention can be obtained, and for example, the upper limit is preferably 3.50 or lower, and more preferably 3.30 or lower.
- “b” is preferably 1.01 or higher, and preferably 1.05 or higher.
- An upper limit of “b” is not limited as long as the effects of the present invention can be obtained, and for example, the upper limit is preferably 1.50 or lower, and more preferably 1.30 or lower.
- the above-mentioned complex oxide is a complex oxide which contains excessive amounts of “A” and “B” in a predetermined proportion with respect to “C”.
- the above complex oxide can exhibit high resistivity even when fired in a reducing atmosphere.
- the ratio of “B” in the M2 sites and the integrated intensity ratio can be easily set within the above ranges.
- an oxygen amount (O) may change according on the composition ratio of “A”, “B”, and “C”, the oxygen defects, and the like. Therefore, in the embodiment, a deviation amount of the oxygen from the stoichiometric ratio is represented by “ ⁇ ”, based on the stoichiometric ratio in the complex oxide represented by the general formula A 3 B 1 C 4 O 15 .
- the range of “ ⁇ ” is not particularly limited, and is, for example, about ⁇ 1 or higher and 1 or lower.
- “A” includes at least barium and may also include divalent elements A1 other than barium.
- “A1” preferably includes one or more elements selected from the group consisting of calcium and strontium.
- the complex oxide according to the embodiment can be expressed as (Ba 1 ⁇ x A1 x ) a B b C 4 O 15+ ⁇ .
- “x” is preferably 0.00 or higher.
- “x” is preferably 0.50 or lower, and more preferably 0.25 or lower. Even if “A1” is included in “A”, suitable dielectric characteristics can be obtained.
- “B” includes at least zirconium and may also include tetravalent elements B1 other than zirconium.
- “B1” preferably includes titanium.
- the complex oxide according to the embodiment can be expressed as A a (Zr 1 ⁇ y B1 y ) b C 4 O 15+ ⁇ .
- “y” is preferably 0.00 or higher.
- “y” is preferably 0.50 or lower, and more preferably 0.25 or lower. Even if “B1” is included in “B”, suitable dielectric characteristics can be obtained.
- titanium when titanium is included as “B1”, the resistivity tends to decrease. Therefore, in the embodiment, it is preferable that titanium is included to an extent that the effects of the present invention can be obtained. Specifically, when the total number of atoms configuring “B” is set to 1, the proportion of the number of titanium atoms is preferably 0.25 or lower, and more preferably 0.125 or lower. From the viewpoint of obtaining high resistivity, it is preferable that the complex oxide is substantially free of titanium.
- substantially free of titanium means that titanium may be contained as long as it is in an amount due to inevitable impurities.
- C includes at least niobium and may also include pentavalent elements C1 other than niobium.
- C1 preferably includes tantalum.
- the complex oxide according to the embodiment can be expressed as A a B b (Nb 1 ⁇ z C1 z ) 4 O 15+ ⁇ .
- z is preferably 0.00 or higher.
- “z” is preferably 0.50 or lower, and more preferably 0.25 or lower. Even if “C1” is included in “C”, suitable dielectric characteristics can be obtained.
- the proportion of the number of atoms of the divalent elements A1 other than calcium and strontium is preferably 0.10 or lower.
- the proportion of the number of atoms of the tetravalent elements B1 other than titanium is preferably 0.10 or lower.
- the proportion of the number of atoms of the pentavalent elements C1 other than tantalum is preferably 0.10 or lower.
- the general formula A a B b C 4 O 15+ ⁇ can be represented by (Ba 1 ⁇ x A1 x ) a (Zr 1 ⁇ y B1 y ) b (Nb 1 ⁇ z C1 z ) 4 O 15+ ⁇ .
- “a”, “b”, “x”, “y”, “z” and “ ⁇ ” are in the above-mentioned ranges.
- the dielectric composition according to the embodiment may include other components in addition to the above-described complex oxide within the range where the effects of the present invention are exhibited.
- the content of the other components is preferably 20 mass % or less and more preferably 10 mass % or less in 100 mass % of the dielectric composition.
- the content of one or more components selected from the group consisting of SiO 2 , MnO, CuO, Fe 2 O 3 and Bi 2 O 3 is preferably 0.5 mass % or less in total in 100 mass % of the dielectric composition. This is because these components reduce sinterability of the dielectric composition and thus the dielectric characteristics and physical characteristics of the dielectric composition deteriorate.
- the multilayer ceramic capacitor 1 according to the embodiment can be manufactured by a known method similar to a conventional multilayer ceramic capacitor.
- a method is exemplified in which a multilayer ceramic capacitor is manufactured in a manner that a green chip is produced using a paste containing a raw material of a dielectric composition and the green chip is fired. The manufacturing method is specifically described below.
- starting materials for the dielectric composition are prepared.
- the complex oxide configuring the above dielectric composition can be used as the starting material.
- oxides of respective metals included in the complex oxide can be used.
- various compounds which become the components configuring the complex oxide by firing can be used.
- the various compounds may be, for example, carbonates, oxalates, nitrates, hydroxides, organometallic compounds, and the like.
- the starting raw material is preferably powder.
- the raw materials of the complex oxide are weighed to a predetermined proportion, and then are wet mixed for a predetermined time using a ball mill or the like. After the mixed powder is dried, heat treatment is performed in a range of 700 to 1300° C. in the air to obtain a calcinated powder of the complex oxide.
- the paste for producing the green chip is prepared.
- the obtained calcinated powder, a binder, and a solvent are kneaded to prepare a dielectric layer paste.
- the binder and the solvent may be known binder and solvent.
- the dielectric layer paste may include additives such as a plasticizer, a dispersant and the like as necessary.
- An internal electrode layer paste is obtained by kneading the above-described raw material of the conductive material, a binder, and a solvent.
- the binder and the solvent may be known binder and solvent.
- the internal electrode layer paste may include additives such as a inhibitor, a plasticizer and the like as necessary.
- An external electrode paste can be prepared the same as the internal electrode layer paste.
- a green sheet and an internal electrode pattern are formed using each obtained paste and are stacked to obtain the green chip.
- a binder removal treatment is performed on the obtained green chip as necessary.
- Conditions of the binder removal treatment may be known conditions, for example, a holding temperature is preferably 200 to 350° C.
- the green chip is fired to obtain the element body.
- the firing in a reducing atmosphere (the reduction firing) is performed to achieve the ratio of “B” in the M2 sites and the integrated intensity ratio within the above ranges.
- An oxygen partial pressure (pO 2 ) in the reducing atmosphere is preferably 1 ⁇ 10 ⁇ 7 Pa or lower, and more preferably 1 ⁇ 10 ⁇ 8 Pa or lower.
- Other firing conditions may be known conditions, for example, a holding temperature is preferably 1200 to 1450° C.
- a reoxidation treatment is preferably performed on the obtained element body.
- Annealing conditions may be known conditions, for example, an oxygen partial pressure during the annealing is preferably higher than the oxygen partial pressure during the firing, and a holding temperature is preferably 1150° C. or lower.
- a holding temperature is preferably 1150° C. or lower.
- the oxygen partial pressure in the reducing atmosphere during the firing is closer to 0, more oxygen defects are generated in the dielectric composition, and thus the annealing time is preferably increased in order to compensate for the oxygen defects.
- the dielectric composition configuring the dielectric layers of the element body obtained as described above is the above-described dielectric composition. End surface polishing is performed on the element body, and the external electrode paste is coated and baked to form the external electrode 4 . Then, a coating layer is formed as necessary on a surface of the external electrode 4 by plating or the like.
- the multilayer ceramic capacitor according to the embodiment is manufactured.
- the inventor focused on the X-ray diffraction peak of the (410) plane of the tungsten bronze structure, and found that the peak is splitted into two and the larger the area of the high-angle side peak, the more the dielectric characteristics, particularly, the relative permittivity improved.
- the inventor found that the proportion of “B” located in the M2 sites correlates with the area of the high-angle side peak of the X-ray diffraction peak of the (410) plane. As a result, the proportion of “B” located in the M2 sites and the area of the high-angle side peak satisfy the above-described relationship.
- the dielectric composition according to the embodiment includes the divalent element “A” and the tetravalent element “B” in excess with respect to the pentavalent element “C”, thereby giving reduction resistance to the dielectric composition.
- the dielectric composition having an improved relative permittivity while maintaining the resistivity can be obtained.
- the electronic component according to the present invention is a multilayer ceramic capacitor
- the electronic component according to the present invention is not limited to the multilayer ceramic capacitor, and may be any electronic component having the above-described dielectric composition.
- powders of barium carbonate (BaCO 3 ), calcium carbonate (CaCO 3 ), strontium carbonate (SrCO 3 ), zirconium oxide (ZrO 2 ), titanium oxide (TiO 2 ), niobium oxide (Nb 2 O 5 ) and tantalum oxide (Ta 2 O 5 ) were prepared as the starting raw materials of the complex oxide which is the main component of the dielectric composition.
- the prepared starting raw materials were weighed so that the fired dielectric composition had the composition shown in Table 2.
- weighed powders were wet mixed with a ball mill for 16 hours using ion-exchanged water as a dispersant, and the mixture was dried to obtain mixed raw material powder. Thereafter, the obtained mixed raw material powder was heat-treated in air atmosphere under conditions of a holding temperature of 900° C. and a holding time of 2 hours, and the calcinated powder of the complex oxide was obtained.
- the obtained calcinated powder was wet-pulverized by a ball mill for 16 hours using ion-exchanged water as a dispersant, and the pulverized product was dried.
- the obtained granulated powder was put into a mold of ⁇ 12 mm, temporarily press-molded at a pressure of 0.6 ton/cm 2 , and was further press-molded at a pressure of 1.2 ton/cm 2 to obtain a disk-shaped green molded body.
- the obtained green molded body is fired under a reducing atmosphere. Firing conditions were a temperature rising rate of 200° C./h, a holding temperature of 1375° C., and a holding time of 2 hours.
- Firing conditions were a temperature rising rate of 200° C./h, a holding temperature of 1375° C., and a holding time of 2 hours.
- a mixed gas of nitrogen and hydrogen (hydrogen concentration 3%) humidified to a dew point of 20° C. was selected as the atmosphere gas
- a mixed gas of nitrogen and hydrogen (hydrogen concentration 3%) was selected as the atmosphere gas.
- the annealing treatment condition was a holding temperature of 1050° C.
- the atmosphere gas was nitrogen gas humidified to a dew point of 20° C.
- the holding time was 2 hours, and for the samples with the sample number ending in “b”, the holding time was 50 hours.
- the obtained sintered body was pulverized to obtain powder of the sintered body.
- X-ray diffraction measurement was performed on the obtained powder to obtain an X-ray diffraction chart including the X-ray diffraction peak of the (410) plane.
- Cu—K ⁇ ray was used as the X-ray source and measurement conditions were a voltage of 45 kV, a current of 40 mA, and a scanning speed of 3 deg/min.
- the Voigt functions were calculated using Voigt function of a RcppFaddeeva package of R language. Parameters of the Voigt function of the RcppFaddeeva package of R language include a peak location x0, a Gaussian function parameter sigma, and a Lorentz function parameter gamma, and three numerical parameters of the Voigt functions can be set.
- the respective three parameters for the two Voigt functions and the magnification of each Voigt function were set, and the sum of these Voigt functions was defined.
- the Voigt function having a peak on the low-angle side was defined as the low-angle side peak
- the Voigt function having a peak on the high-angle side was defined as the high-angle side peak.
- An integrated intensity ratio (the integrated intensity of the high-angle side peak/the integrated intensity of the low-angle side peak) was calculated from the low-angle side peak and the high-angle side peak. The results are shown in Table 2.
- the ratio of “B” in the M2 sites was calculated by doubling the obtained integrated intensity ratio. The results are shown in Table 2.
- a disc-shaped ceramic capacitor sample was obtained by coating an In—Ga alloy to both main surfaces of the obtained sintered body to form a pair of electrodes.
- the insulation resistance of the capacitor sample was measured using a digital resistance meter (R8340 manufactured by ADVANTEST Corporation) at a reference temperature (25° C.).
- the resistivity was calculated from the obtained insulation resistance, the effective electrode area, and the thickness of the dielectric layer. A higher resistivity was preferable, and in the Examples, a sample having a resistivity of 1.0 ⁇ 10 6 ( ⁇ m) or higher was judged to be good. The results are shown in Table 2.
- the relative permittivity of samples having a resistivity higher than 1.0 ⁇ 10 4 ( ⁇ m) and lower than 1.0 ⁇ 10 8 ( ⁇ m) was calculated based on the capacitance measured at a frequency of 1 MHz. The reason was that measurement values of the capacitance of these samples measured at the frequency of 1 kHz were strongly influenced by low resistance of the samples and lack reliability. Similarly, tan ⁇ of the samples having a resistivity higher than 1.0 ⁇ 10 4 ( ⁇ m) and lower than 1.0 ⁇ 10 8 ( ⁇ m) were also measurement values at the frequency of 1 MHz.
- a sintered body and capacitor samples were produced by the same method as in Experiment 1 except that the prepared starting raw materials were weighed so that the fired dielectric composition had the composition shown in Table 3.
- the same evaluation as in Experiment 1 was performed on the produced sintered body and the capacitor samples. The results are shown in Table 3.
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Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH03274607A (ja) | 1990-03-26 | 1991-12-05 | Toshiba Corp | 誘電体組成物 |
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US10513464B2 (en) * | 2016-03-24 | 2019-12-24 | Tdk Corporation | Dielectric composition, dielectric element, electronic component, and multilayer electronic component |
US20200090869A1 (en) * | 2018-09-13 | 2020-03-19 | Tdk Corporation | Dielectric composition and electronic component |
US20200303122A1 (en) * | 2019-03-22 | 2020-09-24 | Tdk Corporation | Dielectric composition and electronic component |
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JP5158071B2 (ja) * | 2007-02-22 | 2013-03-06 | 株式会社村田製作所 | 誘電体セラミック組成物及び積層セラミックコンデンサ |
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Patent Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH03274607A (ja) | 1990-03-26 | 1991-12-05 | Toshiba Corp | 誘電体組成物 |
US10513464B2 (en) * | 2016-03-24 | 2019-12-24 | Tdk Corporation | Dielectric composition, dielectric element, electronic component, and multilayer electronic component |
US10354799B2 (en) * | 2017-02-23 | 2019-07-16 | Tdk Corporation | Dielectric composition, dielectric element, electronic device, and multilayer electronic device |
US20200090869A1 (en) * | 2018-09-13 | 2020-03-19 | Tdk Corporation | Dielectric composition and electronic component |
US10964477B2 (en) * | 2018-09-13 | 2021-03-30 | Tdk Corporation | Dielectric composition and electronic component |
US10991511B2 (en) * | 2018-09-13 | 2021-04-27 | Tdk Corporation | Dielectric composition and electronic component |
US20200303122A1 (en) * | 2019-03-22 | 2020-09-24 | Tdk Corporation | Dielectric composition and electronic component |
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