US10338128B2 - Life estimation circuit and semiconductor device made using the same - Google Patents

Life estimation circuit and semiconductor device made using the same Download PDF

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US10338128B2
US10338128B2 US15/180,383 US201615180383A US10338128B2 US 10338128 B2 US10338128 B2 US 10338128B2 US 201615180383 A US201615180383 A US 201615180383A US 10338128 B2 US10338128 B2 US 10338128B2
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power element
temperature
life
inflection point
estimation circuit
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US20170074921A1 (en
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Shiori Uota
Fumitaka Tametani
Takahiro Inoue
Rei YONEYAMA
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Mitsubishi Electric Corp
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Mitsubishi Electric Corp
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/26—Testing of individual semiconductor devices
    • G01R31/2642—Testing semiconductor operation lifetime or reliability, e.g. by accelerated life tests
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/40—Testing power supplies
    • G01R31/42—AC power supplies
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
    • H01L27/0611—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region
    • H01L27/0617—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region comprising components of the field-effect type
    • H01L27/0635—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region comprising components of the field-effect type in combination with bipolar transistors and diodes, or resistors, or capacitors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/16—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/16—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table
    • H01L29/1608—Silicon carbide
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
    • H01L29/739—Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field-effect, e.g. bipolar static induction transistors [BSIT]
    • H01L29/7393—Insulated gate bipolar mode transistors, i.e. IGBT; IGT; COMFET
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
    • H01L29/861—Diodes
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/26—Testing of individual semiconductor devices
    • G01R31/2607—Circuits therefor
    • G01R31/2608—Circuits therefor for testing bipolar transistors
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/26—Testing of individual semiconductor devices
    • G01R31/2607—Circuits therefor
    • G01R31/2632—Circuits therefor for testing diodes
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/18—Modifications for indicating state of switch

Definitions

  • the present invention relates to life estimation circuits and semiconductor devices made using the same, and particularly to a life estimation circuit to estimate the life of a power element and a semiconductor device made using the same.
  • a power element is subject to repeated, wide temperature variations as a current passing therethrough increases or decreases.
  • bonding of wires connecting the power element to electrodes gradually deteriorates and ultimately breaks, causing the power element to reach the end of its life.
  • the wide temperature variations exert stress on solder connecting the components, causing the development of cracking and peeling which will lower the heat dissipation characteristics of the power element, sometimes even resulting in thermal destruction.
  • Patent Document 1 discloses a life estimation circuit to detect temperature of a power element, count the number of times that the temperature has exceeded a threshold temperature (for example, 50° C.), and when the count value reaches a threshold value, output an end-of-life alarm signal warning that the power element is about to reach the end of its life.
  • a threshold temperature for example, 50° C.
  • Patent Document 1 when the temperature of the power element varies from 25° C. to 75° C. to 60° C. to 85° C., for example, the number of times that the temperature has exceeded the threshold temperature (for example, 50° C.) is only once. Thus, it is determined that the temperature variation related to life has occurred once.
  • the threshold temperature for example, 50° C.
  • a main object of the present invention is to provide a life estimation circuit capable of accurately estimate the life of a power element, and a semiconductor device made using the same.
  • a life estimation circuit is a life estimation circuit for estimating life of a power element, the life estimation circuit including a temperature detector configured to detect temperature of the power element, an inflection point detection unit configured to detect an inflection point of temperature variation in the power element based on a result of the detection by the temperature detector, an operation unit configured to determine an absolute value of a difference between the temperature of the power element at an inflection point detected this time by the inflection point detection unit and the temperature of the power element at an inflection point detected last time by the inflection point detection unit, a count circuit configured to count the number of times of occurrence of a first temperature variation in which the absolute value of the difference in temperature determined by the operation unit reaches a first threshold temperature, and a signal generation unit configured to output a signal related to the life of the power element based on a count value from the count circuit.
  • an inflection point of temperature variation in the power element is detected, an absolute value of a difference between the temperature of the power element at an inflection point detected this time and the temperature of the power element at an inflection point detected last time is determined, the number of times of occurrence of a first temperature variation in which the absolute value reaches a first threshold temperature is counted, and a signal related to the life of the power element is output based on the count value. Accordingly, thermal stress applied to the power element can be accurately detected, so that the life of the power element can be accurately estimated.
  • FIG. 1 is a block diagram showing the configuration of a power module according to a first embodiment of the present invention.
  • FIG. 2 is a block diagram showing the configuration of a power module according to a second embodiment of the present invention.
  • FIG. 3A is a time chart illustrating the operation of the power module shown in FIG. 2 .
  • FIG. 3B is a time chart illustrating the operation of the power module shown in FIG. 2 .
  • FIG. 4 is a block diagram showing the configuration of a power module according to a third embodiment of the present invention.
  • FIG. 5 is a block diagram showing the configuration of a power module according to a fourth embodiment of the present invention.
  • FIG. 6 is a block diagram showing a substantial part of a power module according to a fifth embodiment of the present invention.
  • FIG. 7 is a circuit block diagram showing the configuration of a power module according to a sixth embodiment of the present invention.
  • FIG. 1 is a block diagram showing the configuration of a power module according to a first embodiment of the present invention.
  • this power module includes a power element unit 1 , a control unit 2 , and a life estimation circuit 3 .
  • Power element unit 1 includes a plurality of power elements, is controlled by control unit 2 , and converts a direct-current (DC) voltage VDC into an alternating-current (AC) voltage VAC, for example.
  • the power elements are IGBTs (Insulated Gate Bipolar Transistors), MOSFETs, bipolar transistors, diodes or the like.
  • Control unit 2 coverts DC voltage VDC into sinusoidal AC voltage VAC by turning each of the plurality of power elements of power element unit 1 on/off based on, for example, a sinusoidally varying voltage command value VC.
  • loss namely, heat
  • the temperature of the power element increases.
  • the current flowing through the power element is interrupted, the temperature of the power element decreases.
  • Life estimation circuit 3 estimates the life of power element unit 1 based on the temperature variation in power element unit 1 , and when life estimation circuit 3 determines that power element unit 1 is about to reach the end of its life, raises an alarm signal AL from a deactivated “L” level to an activated “H” level. Life estimation circuit 3 includes a temperature detector 4 , an inflection point detection unit 5 , storage units 6 and 7 , an operation unit 8 , a count circuit 9 , and a signal generation unit 10 .
  • Temperature detector 4 detects the temperature of power element unit 1 , and outputs a signal Vt indicating the detected value.
  • the level of signal Vt varies depending on the temperature of power element unit 1 .
  • Inflection point detection unit 5 detects an inflection point of the temperature variation in power element unit 1 based on output signal Vt from temperature detector 4 .
  • the inflection point of the temperature variation is a point at which the temperature reverses from increasing to decreasing, or reverses from decreasing to increasing.
  • Inflection point detection unit 5 samples output signal Vt from temperature detector 4 at intervals sufficiently shorter than the interval during which the power elements included in power element unit 1 are turned on/off, for example, and converts the level of sampled signal Vt into a digital signal. Inflection point detection unit 5 determines whether the levels of a plurality of sampled signals Vt are increasing or decreasing, and detects inflection points based on a result of the determination.
  • inflection point detection unit 5 Whenever an inflection point is detected, inflection point detection unit 5 writes a digital signal indicating the level of signal Vt (namely, temperature T of power element unit 1 ) at that inflection point alternately into storage units 6 and 7 .
  • Vt temperature of power element unit 1
  • a digital signal indicating a temperature Tn of power element unit 1 at an inflection point detected this time is written into storage unit 6
  • a digital signal indicating a temperature T(n ⁇ 1) of power element unit 1 at an inflection point detected last time is written into storage unit 7 .
  • the digital signals indicating temperatures Tn and T(n ⁇ 1) and written into storage units 6 and 7 are provided to operation unit 8 , where n is any integer.
  • operation unit 8 determines an absolute value
  • of a difference ⁇ T T(n ⁇ 1) between temperature Tn of power element unit 1 at the inflection point detected this time and temperature T(n ⁇ 1) of power element unit 1 at the inflection point detected last time. Operation unit 8 provides a digital signal indicating absolute value
  • count circuit 9 Based on the digital signal indicating absolute value
  • Signal generation unit 10 compares count value C with a threshold number of times Cth, and when C ⁇ Cth is satisfied, sets alarm signal AL warning that power element unit 1 is about to reach the end of its life to the activated “H” level, and when C ⁇ Cth is satisfied, maintains alarm signal AL at the deactivated “L” level.
  • a load for example, a motor
  • VAC output voltage
  • a current consumed by the load increases to increase the current flowing through power element unit 1
  • the temperature of power element unit 1 increases.
  • the temperature of power element unit 1 decreases.
  • the temperature of power element unit 1 is detected by temperature detector 4 , and output signal Vt from temperature detector 4 is provided to inflection point detection unit 5 .
  • Count value C is compared with threshold number of times Cth by signal generation unit 10 , and when C ⁇ Cth is satisfied, alarm signal AL is raised to the activated “H” level to warn the user that power element unit 1 is about to reach the end of its life.
  • the user detects that power element unit 1 is about to reach the end of its life in response to alarm signal AL being raised to “H” level, and stops the system with appropriate timing and replaces the power module with a new one.
  • the inflection point of the temperature variation in power element unit 1 is detected, and absolute value
  • of difference ⁇ T Tn ⁇ T(n ⁇ 1) between temperature Tn of power element unit 1 at inflection point Pn detected this time and temperature T(n ⁇ 1) of power element unit 1 at inflection point P(n ⁇ 1) detected last time is determined.
  • reaches threshold temperature Tth, it is determined that the temperature variation has occurred and count value C is incremented, and when the count value reaches threshold number of times Cth, alarm signal AL is set to the activated level. Accordingly, thermal stress applied to power element unit 1 can be accurately detected, so that the life of power element unit 1 can be accurately estimated.
  • FIG. 2 is a block diagram showing the configuration of a power module according to a second embodiment of the present invention, which is compared with FIG. 1 .
  • this power module is different from the power module shown in FIG. 1 in that count circuit 9 and signal generation unit 10 have been replaced with a count circuit 15 and a signal generation unit 16 , respectively.
  • Count circuit 15 compares first to third threshold temperatures Tth 1 to Tth 3 with absolute value
  • it is determined that first temperature variation ⁇ T 1 has occurred.
  • ⁇ Tth 1 it is determined that second temperature variation ⁇ T 2 has occurred.
  • ⁇ Tth 2 is satisfied, it is determined that third temperature variation ⁇ T 3 has occurred.
  • Count circuit 15 increments (+1) a first count value C 1 when first temperature variation ⁇ T 1 has occurred, increments (+1) a second count value C 2 when second temperature variation ⁇ T 2 has occurred, and increments (+1) a third count value C 3 when third temperature variation ⁇ T 3 has occurred.
  • Signal generation unit 16 compares three threshold numbers of times Cth 1 to Cth 3 with count values C 1 to C 3 from count circuit 15 , respectively. Cth 1 ⁇ Cth 2 ⁇ Cth 3 holds. When any one of C 1 ⁇ Cth 1 , C 2 ⁇ Cth 2 , and C 3 ⁇ Cth 3 is satisfied, signal generation unit 16 sets alarm signal AL warning that power element unit 1 is about to reach the end of its life to the activated “H” level. When C 1 ⁇ Cth 1 , C 2 ⁇ Cth 2 , and C 3 ⁇ Cth 3 are satisfied, signal generation unit 16 maintains alarm signal AL at the deactivated “L” level.
  • Cth 1 is set to the lowest value of three threshold numbers of times Cth 1 to Cth 3 because temperature stress by ⁇ T 1 of three temperature variations ⁇ T 1 to ⁇ T 3 is the highest.
  • Cth 3 is set to the highest value of three threshold numbers of times Cth 1 to Cth 3 because temperature stress by ⁇ T 3 of three temperature variations ⁇ T 1 to ⁇ T 3 is the lowest.
  • FIGS. 3A and 3B are diagrams schematically showing the operation of the power module shown in FIG. 2 .
  • FIG. 3A shows temporal variation in temperature T of power element unit 1
  • FIG. 3B shows count values C 1 to C 3 and threshold numbers of times Cth 1 to Cth 3 of first to third temperature variations ⁇ T 1 to ⁇ T 3 .
  • a load is to be driven by output voltage VAC from power element unit 1 .
  • power supply from power element unit 1 to the load is stopped, and temperature T of power element unit 1 is room temperature.
  • temperature T of power element unit 1 starts to increase.
  • time t 1 At a point when the operation of power element unit 1 is started (time t 1 ), it is recognized that an inflection point P 1 has occurred, and a digital signal indicating a temperature T 1 of power element unit 1 at time t 1 is written, for example, into storage unit 6 .
  • an inflection point P 5 is detected at time t 5 , and a digital signal indicating a temperature T 5 of power element unit 1 at that inflection point P 5 is written into storage unit 6 . It is determined that third temperature variation ⁇ T 3 has occurred between times t 4 and t 5 , and third count value C 3 is incremented.
  • An inflection point P 6 is detected at time t 6 , and a digital signal indicating a temperature T 6 of power element unit 1 at that inflection point P 6 is written into storage unit 7 . It is determined that third temperature variation ⁇ T 3 has occurred between times t 5 and t 6 , and third count value C 3 is incremented.
  • of the difference between temperature T 7 of power element unit 1 at inflection point P 7 detected this time and temperature T 6 of power element unit 1 at inflection point P 6 detected last time is determined by operation unit 8 .
  • Three threshold values Tth 1 to Tth 3 are compared with
  • is satisfied, and it is determined that first temperature variation ⁇ T 1 has occurred between times t 6 and t 7 , and first count value C 1 is incremented.
  • M in an integer greater than or equal to 2.
  • Count circuit 15 compares
  • FIG. 4 is a block diagram showing the configuration of a power module according to a third embodiment, which is compared with FIG. 1 .
  • this power module is different from the power module shown in FIG. 1 in that signal generation unit 10 has been replaced with a signal generation unit 20 .
  • Signal generation unit 20 outputs a digital signal DO indicating a difference Cth ⁇ C between threshold number of times Cth and count value C.
  • Digital signal DO serves as a signal indicating an allowable number of times that a temperature variation occurs, that is, the remaining life of power element unit 1 .
  • maintenance of the system, replacement of the power module and the like can be performed in a planned manner based on signal DO indicating the remaining life of power element unit 1 .
  • the circuit size can be reduced, the number of components can be lowered, the cost can be reduced, and the defect rate can be lowered, as compared to the case where an analog signal indicating the remaining life of power element unit 1 is output.
  • FIG. 5 is a block diagram showing the configuration of a power module according to a fourth embodiment, which is compared with FIG. 2 .
  • this power module is different from the power module shown in FIG. 2 in that signal generation unit 16 has been replaced with a signal generation unit 25 .
  • Signal generation unit 25 outputs a digital signal DO 1 . indicating a difference Cth 1 ⁇ C 1 between threshold number of times Cth 1 and count value C 1 , a digital signal DO 2 indicating a difference Cth 2 ⁇ C 2 between threshold number of times Cth 2 and count value C 2 , and a digital signal DO 3 indicating a difference Cth 3 ⁇ C 3 between threshold number of times Cth 3 and count value C 3 .
  • Digital signal DO 1 serves as a signal indicating an allowable number of times that first temperature variation ⁇ T 1 occurs, that is, a first remaining life of power element unit 1 .
  • Digital signal DO 2 serves as a signal indicating an allowable number of times that second temperature variation ⁇ T 2 occurs, that is, a second remaining life of power element unit 1 .
  • Digital signal DO 3 serves as a signal indicating an allowable number of times that third temperature variation ⁇ T 3 occurs, that is, a third remaining life of power element unit 1 .
  • the remaining life of power element unit 1 can be estimated more accurately than in the third embodiment.
  • FIG. 6 is a block diagram showing a substantial part of a power module according to a fifth embodiment of the present invention, which is compared with FIG. 1 .
  • this power module is different from the power module shown in FIG. 1 in that inflection point detection unit 5 has been replaced with an inflection point detection unit 30 .
  • Inflection point detection unit 30 includes a differentiation circuit 31 , a pulse generation circuit 32 , an A/D conversion circuit 33 , and a write circuit 34 .
  • Output signal Vt from temperature detector 4 is an analog voltage signal.
  • Differentiation circuit 31 is a CR filter circuit, for example, and differentiates output signal Vt from temperature detector 4 . At an inflection point of signal Vt, an output signal V 31 from differentiation circuit 31 reaches 0 V. Whenever output signal V 31 from differentiation circuit 31 reaches 0 V, pulse generation circuit 32 outputs a pulse signal ⁇ 32 .
  • A/D conversion circuit 33 samples output signal Vt from temperature detector 4 at intervals sufficiently shorter than the interval during which the power elements included in power element unit 1 are turned on/off, and converts each sampled signal Vt into a digital signal and provides the digital signal to write circuit 34 .
  • write circuit 34 In response to pulse signal ⁇ 32 from pulse generation circuit 32 , write circuit 34 writes the digital signals from A/D conversion circuit 33 alternately into storage units 6 and 7 . For example, write circuit 34 writes the digital signal into storage unit 7 in response to odd-numbered pulse signal ⁇ 32 , and writes the digital signal into storage unit 6 in response to even-numbered pulse signal ⁇ 32 .
  • the circuit size can be reduced since the inflection point is detected using differentiation circuit 31 .
  • FIG. 7 is a circuit block diagram showing the configuration of a power module according to a sixth embodiment of the present invention.
  • this power module includes a power element unit 1 A and a control IC 40 .
  • Power element unit 1 A includes DC input terminals Ta and Tb, AC output terminals Tc to Te, signal terminals Tf and Tg, transistors Q 1 to Q 6 , and diodes D 1 to D 9 .
  • DC input terminals Ta and Tb receive DC voltages VP and VN from a DC power supply (not shown), respectively.
  • DC voltage VP is higher than DC voltage VN.
  • Three-phase AC voltages VU, VV and VW are output to AC output terminals Tc to Te, respectively.
  • Each of transistors Q 1 to Q 6 is an IGBT, for example.
  • Transistors Q 1 to Q 3 have collectors each connected to DC input terminal Ta, and have emitters connected to AC output terminals Tc to Te, respectively.
  • Transistors Q 4 to Q 6 have collectors connected to AC output terminals Tc to Te, respectively, and have emitters each connected to DC input terminal Tb.
  • Diodes D 1 to D 6 are connected in anti-parallel with transistors Q 1 to Q 6 , respectively.
  • Each of transistors Q 1 to Q 6 is turned on/off by control unit 2 .
  • Transistors Q 1 to Q 6 and diodes D 1 to D 6 form an inverter that converts DC power supplied from the DC power supply (not shown) through DC input terminals Ta and Tb into three-phase AC power, and outputs the AC power to a load through AC output terminals Tc to Te.
  • Each of transistors Q 1 to Q 6 and diodes D 1 to D 6 is a power element.
  • Diodes D 7 to D 9 are connected in series in the forward direction between signal terminals Tf and Tg.
  • Signal terminal Tf receives an output current from a constant current source 4 a while signal terminal Tg receives a reference voltage VSS.
  • a forward voltage VF of diodes D 7 to D 9 appears at signal terminal Tf.
  • Forward voltage VF of diodes D 7 to D 9 varies depending on the temperature of diodes D 7 to D 9 .
  • Diodes D 7 to D 9 and constant current source 4 a form a portion of temperature detector 4 shown in FIG. 1 .
  • Output signal Vt from temperature detector 4 is generated based on forward voltage VF of diodes D 7 to D 9 .
  • diodes D 7 to D 9 are mounted on a substrate (not shown) the same as where the inverter (namely, transistors Q 1 to Q 6 and diodes D 1 to D 6 ) is mounted.
  • loss namely, heat
  • the temperature of transistors Q 1 to Q 6 and diodes D 1 to D 6 varies depending on the current consumed by the load.
  • the heat generated in transistors Q 1 to Q 6 and diodes D 1 to D 6 is transferred to diodes D 7 to D 9 , and the temperature of diodes D 7 to D 9 also varies depending on the temperature of transistors Q 1 to Q 6 and diodes D 1 to D 6 .
  • Forward voltage VF of diodes D 7 to D 9 varies depending on the temperature of diodes D 7 to D 9 .
  • a life estimation circuit 3 A including constant current source 4 a , and control unit 2 are mounted on the same control IC 40 . The other configurations and operations are the same as those in the first embodiment, and thus will not be described repeatedly.
  • diodes D 7 to D 9 for temperature detection are mounted on the substrate the same as where power elements Q 1 to Q 6 and D 1 to D 6 are mounted, the temperature of power elements Q 1 to Q 6 and D 1 to D 6 can be accurately detected. Furthermore, since life estimation circuit 3 A and control unit 2 are mounted on single control IC 40 , the circuit size can be reduced, the number of components can be lowered, the cost can be reduced, and the defect rate can be lowered.
  • each of transistors Q 1 to Q 6 may be a semiconductor switching element other than an IGBT.
  • it may be a bipolar transistor or a MOSFET.
  • transistors Q 1 to Q 6 are formed of silicon (Si) while diodes D 1 to D 6 are formed of silicon carbide (SiC).
  • a semiconductor element formed of silicon carbide has a high breakdown voltage and a high allowable current density. Accordingly, diodes D 1 to D 6 can be reduced in size, so that the power module can be reduced in size.
  • transistors Q 1 to Q 6 and diodes D 1 to D 6 are formed of silicon carbide. Accordingly, transistors Q 1 to Q 6 and diodes D 1 to D 6 can be reduced in size, so that the power module can be further reduced in size than in the first modification.
  • each reverse-conducting IGBT is formed of silicon carbide.
  • the reverse-conducting IGBT is a semiconductor element including an IGBT and a diode connected in anti-parallel with the IGBT. Accordingly, the power module can be further reduced in size than in the second modification, so that the assembly operation can be further simplified.

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  • Condensed Matter Physics & Semiconductors (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Power Conversion In General (AREA)
  • Inverter Devices (AREA)
  • Testing Of Individual Semiconductor Devices (AREA)
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DE102016214223A1 (de) 2017-03-16

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