TWI901611B - 攝像裝置及電子機器 - Google Patents

攝像裝置及電子機器

Info

Publication number
TWI901611B
TWI901611B TW109140666A TW109140666A TWI901611B TW I901611 B TWI901611 B TW I901611B TW 109140666 A TW109140666 A TW 109140666A TW 109140666 A TW109140666 A TW 109140666A TW I901611 B TWI901611 B TW I901611B
Authority
TW
Taiwan
Prior art keywords
wiring
semiconductor substrate
wiring layer
transistor
disposed
Prior art date
Application number
TW109140666A
Other languages
English (en)
Chinese (zh)
Other versions
TW202139443A (zh
Inventor
唐仁原裕樹
Original Assignee
日商索尼半導體解決方案公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 日商索尼半導體解決方案公司 filed Critical 日商索尼半導體解決方案公司
Publication of TW202139443A publication Critical patent/TW202139443A/zh
Application granted granted Critical
Publication of TWI901611B publication Critical patent/TWI901611B/zh

Links

Classifications

    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H04N25/77—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H04N25/7795—Circuitry for generating timing or clock signals
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H04N25/78—Readout circuits for addressed sensors, e.g. output amplifiers or A/D converters
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/79—Arrangements of circuitry being divided between different or multiple substrates, chips or circuit boards, e.g. stacked image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/802—Geometry or disposition of elements in pixels, e.g. address-lines or gate electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/803—Pixels having integrated switching, control, storage or amplification elements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/809—Constructional details of image sensors of hybrid image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/811—Interconnections
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/812—Arrangements for transferring the charges in the image sensor perpendicular to the imaging plane, e.g. buried regions used to transfer generated charges to circuitry under the photosensitive region
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/813—Electronic components shared by multiple pixels, e.g. one amplifier shared by two pixels
    • A—HUMAN NECESSITIES
    • A61—MEDICAL OR VETERINARY SCIENCE; HYGIENE
    • A61B—DIAGNOSIS; SURGERY; IDENTIFICATION
    • A61B1/00—Instruments for performing medical examinations of the interior of cavities or tubes of the body by visual or photographical inspection, e.g. endoscopes; Illuminating arrangements therefor
    • A61B1/04—Instruments for performing medical examinations of the interior of cavities or tubes of the body by visual or photographical inspection, e.g. endoscopes; Illuminating arrangements therefor combined with photographic or television appliances
    • A61B1/05—Instruments for performing medical examinations of the interior of cavities or tubes of the body by visual or photographical inspection, e.g. endoscopes; Illuminating arrangements therefor combined with photographic or television appliances characterised by the image sensor, e.g. camera, being in the distal end portion
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
    • H10F39/184—Infrared image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/791—Package configurations characterised by the relative positions of pads or connectors relative to package parts of direct-bonded pads
    • H10W90/792—Package configurations characterised by the relative positions of pads or connectors relative to package parts of direct-bonded pads between multiple chips

Landscapes

  • Engineering & Computer Science (AREA)
  • Multimedia (AREA)
  • Signal Processing (AREA)
  • Solid State Image Pick-Up Elements (AREA)
TW109140666A 2019-11-29 2020-11-20 攝像裝置及電子機器 TWI901611B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2019-216511 2019-11-29
JP2019216511 2019-11-29

Publications (2)

Publication Number Publication Date
TW202139443A TW202139443A (zh) 2021-10-16
TWI901611B true TWI901611B (zh) 2025-10-21

Family

ID=76129388

Family Applications (1)

Application Number Title Priority Date Filing Date
TW109140666A TWI901611B (zh) 2019-11-29 2020-11-20 攝像裝置及電子機器

Country Status (7)

Country Link
US (2) US11973102B2 (https=)
EP (1) EP4068361B1 (https=)
JP (1) JP7676319B2 (https=)
KR (2) KR102859488B1 (https=)
CN (1) CN114667605B (https=)
TW (1) TWI901611B (https=)
WO (1) WO2021106732A1 (https=)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2023032049A (ja) * 2021-08-26 2023-03-09 キオクシア株式会社 半導体装置
WO2023091898A1 (en) * 2021-11-16 2023-05-25 Hsu Fu Chang Advanced structures having mosfet transistors and metal layers
TW202329439A (zh) * 2021-12-10 2023-07-16 日商索尼半導體解決方案公司 光檢測裝置及電子機器
US12327804B2 (en) * 2022-05-13 2025-06-10 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor device and manufacturing method thereof
WO2023243222A1 (ja) * 2022-06-15 2023-12-21 ソニーセミコンダクタソリューションズ株式会社 撮像装置
US12408466B2 (en) 2022-07-11 2025-09-02 Taiwan Semiconductor Manufacturing Company, Ltd. High-speed readout image sensor
TWI884427B (zh) * 2022-08-26 2025-05-21 台灣積體電路製造股份有限公司 影像感測器與其形成方法
US12407957B1 (en) * 2022-12-22 2025-09-02 Apple Inc. Multiple-substrate high conversion gain pixels
US20240250098A1 (en) * 2023-01-25 2024-07-25 Taiwan Semiconductor Manufacturing Company, Ltd. Image sensor device and method of manufacturing the same
WO2025047167A1 (ja) * 2023-08-25 2025-03-06 ソニーセミコンダクタソリューションズ株式会社 光検出装置
WO2025126676A1 (ja) * 2023-12-14 2025-06-19 ソニーセミコンダクタソリューションズ株式会社 固体撮像装置及び電子機器
WO2025142996A1 (ja) * 2023-12-28 2025-07-03 ソニーセミコンダクタソリューションズ株式会社 光検出装置
WO2026023245A1 (ja) * 2024-07-22 2026-01-29 ソニーセミコンダクタソリューションズ株式会社 固体撮像装置

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20100060764A1 (en) * 2008-09-09 2010-03-11 Mccarten John P High gain read circuit for 3d integrated pixel
JP2011166170A (ja) * 2011-05-16 2011-08-25 Sony Corp 固体撮像装置、固体撮像装置の駆動方法、及び電子機器
US20170162616A1 (en) * 2015-12-04 2017-06-08 Canon Kabushiki Kaisha Image pickup device and image pickup system
TW201903971A (zh) * 2017-04-27 2019-01-16 日商瑞薩電子股份有限公司 半導體裝置及其製造方法

Family Cites Families (37)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW201101476A (en) * 2005-06-02 2011-01-01 Sony Corp Semiconductor image sensor module and method of manufacturing the same
JP5985136B2 (ja) * 2009-03-19 2016-09-06 ソニー株式会社 半導体装置とその製造方法、及び電子機器
JP5482025B2 (ja) * 2009-08-28 2014-04-23 ソニー株式会社 固体撮像装置とその製造方法、及び電子機器
JP2012015400A (ja) * 2010-07-02 2012-01-19 Canon Inc 固体撮像装置
JP2012147169A (ja) * 2011-01-11 2012-08-02 Renesas Electronics Corp 固体撮像装置
JP2012156310A (ja) * 2011-01-26 2012-08-16 Sony Corp 固体撮像素子、固体撮像素子の製造方法、および電子機器
JP2013187360A (ja) * 2012-03-08 2013-09-19 Sony Corp 固体撮像装置、及び、電子機器
JP2014022561A (ja) 2012-07-18 2014-02-03 Sony Corp 固体撮像装置、及び、電子機器
JP2014209696A (ja) * 2012-07-23 2014-11-06 ソニー株式会社 固体撮像装置、信号読み出し方法、および電子機器
ES2476115B1 (es) * 2012-12-11 2015-04-20 Consejo Superior De Investigaciones Científicas (Csic) Metodo y dispositivo para la deteccion de la variacion temporal de la intensidad luminosa en una matriz de fotosensores
JP2015032687A (ja) * 2013-08-02 2015-02-16 ソニー株式会社 撮像素子、電子機器、および撮像素子の製造方法
JP6413235B2 (ja) * 2013-12-06 2018-10-31 株式会社ニコン 撮像素子および撮像装置
KR20220100106A (ko) * 2014-06-09 2022-07-14 가부시키가이샤 한도오따이 에네루기 켄큐쇼 촬상 장치
CN107408565B (zh) * 2015-03-03 2021-07-20 索尼公司 半导体装置和电子设备
JP6856974B2 (ja) * 2015-03-31 2021-04-14 ソニーセミコンダクタソリューションズ株式会社 固体撮像素子および電子機器
KR102656723B1 (ko) * 2015-04-07 2024-04-12 소니그룹주식회사 고체 촬상 소자 및 전자 장치
JP6873905B2 (ja) 2015-09-11 2021-05-19 ソニーセミコンダクタソリューションズ株式会社 固体撮像装置および電子機器
JP2017117828A (ja) * 2015-12-21 2017-06-29 ソニー株式会社 固体撮像素子および電子装置
JP6832649B2 (ja) * 2016-08-17 2021-02-24 ブリルニクス インク 固体撮像装置、固体撮像装置の駆動方法、および電子機器
CN110050345B (zh) * 2016-12-09 2023-11-14 索尼半导体解决方案公司 固态图像拾取元件和电子装置
US9888197B1 (en) * 2017-01-04 2018-02-06 Semiconductor Components Industries, Llc Methods and apparatus for a CMOS image sensor with an in-pixel amplifier
JP7193907B2 (ja) * 2017-01-23 2022-12-21 キヤノン株式会社 固体撮像装置
JP6957157B2 (ja) * 2017-01-26 2021-11-02 キヤノン株式会社 固体撮像装置、撮像システム、および固体撮像装置の製造方法
JP7121468B2 (ja) * 2017-02-24 2022-08-18 ブリルニクス シンガポール プライベート リミテッド 固体撮像装置、固体撮像装置の製造方法、および電子機器
JP2018174231A (ja) * 2017-03-31 2018-11-08 ソニーセミコンダクタソリューションズ株式会社 固体撮像装置、および電子機器
JP7128178B2 (ja) 2017-04-04 2022-08-30 ソニーセミコンダクタソリューションズ株式会社 半導体装置、半導体装置の製造方法、及び電子機器
JP2018182462A (ja) * 2017-04-07 2018-11-15 ルネサスエレクトロニクス株式会社 撮像素子
JP6963873B2 (ja) * 2017-05-26 2021-11-10 ソニーセミコンダクタソリューションズ株式会社 固体撮像素子、固体撮像素子の製造方法および電子機器
JP2018206837A (ja) * 2017-05-31 2018-12-27 ソニーセミコンダクタソリューションズ株式会社 固体撮像装置および固体撮像装置の製造方法、並びに電子機器
JP7064322B2 (ja) * 2017-12-06 2022-05-10 キヤノン株式会社 電子機器およびその制御方法、ならびに撮像素子
WO2019130702A1 (ja) * 2017-12-27 2019-07-04 ソニーセミコンダクタソリューションズ株式会社 撮像装置
JP7118658B2 (ja) * 2018-02-09 2022-08-16 キヤノン株式会社 撮像装置、撮像システム、移動体
JP7080660B2 (ja) * 2018-02-09 2022-06-06 キヤノン株式会社 光電変換装置、撮像システム、および、移動体
WO2019181456A1 (ja) * 2018-03-19 2019-09-26 ソニーセミコンダクタソリューションズ株式会社 固体撮像素子および固体撮像装置
CN112119500B (zh) * 2018-05-21 2025-06-17 索尼公司 固态摄像元件及其制造方法
JP7129646B2 (ja) 2018-06-11 2022-09-02 パナソニックＩｐマネジメント株式会社 制御システム、プログラム
JP2020068289A (ja) * 2018-10-24 2020-04-30 キヤノン株式会社 光電変換装置、撮像システム、移動体、および積層用の半導体チップ

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20100060764A1 (en) * 2008-09-09 2010-03-11 Mccarten John P High gain read circuit for 3d integrated pixel
JP2011166170A (ja) * 2011-05-16 2011-08-25 Sony Corp 固体撮像装置、固体撮像装置の駆動方法、及び電子機器
US20170162616A1 (en) * 2015-12-04 2017-06-08 Canon Kabushiki Kaisha Image pickup device and image pickup system
TW201903971A (zh) * 2017-04-27 2019-01-16 日商瑞薩電子股份有限公司 半導體裝置及其製造方法

Also Published As

Publication number Publication date
JP7676319B2 (ja) 2025-05-14
TW202139443A (zh) 2021-10-16
EP4068361A4 (en) 2022-12-28
US20240258356A1 (en) 2024-08-01
KR20250136941A (ko) 2025-09-16
KR20220110182A (ko) 2022-08-05
US11973102B2 (en) 2024-04-30
JPWO2021106732A1 (https=) 2021-06-03
CN114667605A (zh) 2022-06-24
WO2021106732A1 (ja) 2021-06-03
CN114667605B (zh) 2025-08-26
EP4068361B1 (en) 2026-02-25
KR102859488B1 (ko) 2025-09-16
EP4068361A1 (en) 2022-10-05
US20220392942A1 (en) 2022-12-08

Similar Documents

Publication Publication Date Title
TWI901611B (zh) 攝像裝置及電子機器
US20250240549A1 (en) Imaging device
US20250081646A1 (en) Imaging device and electronic apparatus
US12464838B2 (en) Solid-state imaging device and electronic apparatus
KR20210141935A (ko) 촬상 소자 및 반도체 소자
US12342640B2 (en) Solid-state imaging element and imaging apparatus
KR20240088707A (ko) 광 검출 소자 및 광 검출 장치
TW202139447A (zh) 攝像裝置
CN116686077A (zh) 光电转换元件及电子设备
EP4693405A1 (en) Light detection device and electronic device
JP2019022020A (ja) 固体撮像素子、固体撮像素子の駆動方法および電子機器
CN121464742A (zh) 光检测装置
TW202410428A (zh) 光檢測裝置
KR20260060369A (ko) 광 검출 장치 및 전자 기기
TW202520924A (zh) 光檢測裝置及電子機器
KR20250166206A (ko) 광 검출 장치 및 전자 기기