KR102859488B1 - 촬상 장치 및 전자 기기 - Google Patents

촬상 장치 및 전자 기기

Info

Publication number
KR102859488B1
KR102859488B1 KR1020227015101A KR20227015101A KR102859488B1 KR 102859488 B1 KR102859488 B1 KR 102859488B1 KR 1020227015101 A KR1020227015101 A KR 1020227015101A KR 20227015101 A KR20227015101 A KR 20227015101A KR 102859488 B1 KR102859488 B1 KR 102859488B1
Authority
KR
South Korea
Prior art keywords
wiring
semiconductor substrate
wiring layer
imaging device
transistor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
KR1020227015101A
Other languages
English (en)
Korean (ko)
Other versions
KR20220110182A (ko
Inventor
히로키 토진바라
Original Assignee
소니 세미컨덕터 솔루션즈 가부시키가이샤
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 소니 세미컨덕터 솔루션즈 가부시키가이샤 filed Critical 소니 세미컨덕터 솔루션즈 가부시키가이샤
Priority to KR1020257030066A priority Critical patent/KR20250136941A/ko
Publication of KR20220110182A publication Critical patent/KR20220110182A/ko
Application granted granted Critical
Publication of KR102859488B1 publication Critical patent/KR102859488B1/ko
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/71—Charge-coupled device [CCD] sensors; Charge-transfer registers specially adapted for CCD sensors
    • H04N25/745—Circuitry for generating timing or clock signals
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/71—Charge-coupled device [CCD] sensors; Charge-transfer registers specially adapted for CCD sensors
    • H04N25/75—Circuitry for providing, modifying or processing image signals from the pixel array
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H04N25/77—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H04N25/7795—Circuitry for generating timing or clock signals
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H04N25/78—Readout circuits for addressed sensors, e.g. output amplifiers or A/D converters
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/79—Arrangements of circuitry being divided between different or multiple substrates, chips or circuit boards, e.g. stacked image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/802—Geometry or disposition of elements in pixels, e.g. address-lines or gate electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/803—Pixels having integrated switching, control, storage or amplification elements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/809—Constructional details of image sensors of hybrid image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/811—Interconnections
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/812—Arrangements for transferring the charges in the image sensor perpendicular to the imaging plane, e.g. buried regions used to transfer generated charges to circuitry under the photosensitive region
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/813—Electronic components shared by multiple pixels, e.g. one amplifier shared by two pixels
    • A—HUMAN NECESSITIES
    • A61—MEDICAL OR VETERINARY SCIENCE; HYGIENE
    • A61B—DIAGNOSIS; SURGERY; IDENTIFICATION
    • A61B1/00—Instruments for performing medical examinations of the interior of cavities or tubes of the body by visual or photographical inspection, e.g. endoscopes; Illuminating arrangements therefor
    • A61B1/04—Instruments for performing medical examinations of the interior of cavities or tubes of the body by visual or photographical inspection, e.g. endoscopes; Illuminating arrangements therefor combined with photographic or television appliances
    • A61B1/05—Instruments for performing medical examinations of the interior of cavities or tubes of the body by visual or photographical inspection, e.g. endoscopes; Illuminating arrangements therefor combined with photographic or television appliances characterised by the image sensor, e.g. camera, being in the distal end portion
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
    • H10F39/184—Infrared image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/791—Package configurations characterised by the relative positions of pads or connectors relative to package parts of direct-bonded pads
    • H10W90/792—Package configurations characterised by the relative positions of pads or connectors relative to package parts of direct-bonded pads between multiple chips

Landscapes

  • Engineering & Computer Science (AREA)
  • Multimedia (AREA)
  • Signal Processing (AREA)
  • Solid State Image Pick-Up Elements (AREA)
KR1020227015101A 2019-11-29 2020-11-19 촬상 장치 및 전자 기기 Active KR102859488B1 (ko)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1020257030066A KR20250136941A (ko) 2019-11-29 2020-11-19 촬상 장치 및 전자 기기

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JPJP-P-2019-216511 2019-11-29
JP2019216511 2019-11-29
PCT/JP2020/043142 WO2021106732A1 (ja) 2019-11-29 2020-11-19 撮像装置および電子機器

Related Child Applications (1)

Application Number Title Priority Date Filing Date
KR1020257030066A Division KR20250136941A (ko) 2019-11-29 2020-11-19 촬상 장치 및 전자 기기

Publications (2)

Publication Number Publication Date
KR20220110182A KR20220110182A (ko) 2022-08-05
KR102859488B1 true KR102859488B1 (ko) 2025-09-16

Family

ID=76129388

Family Applications (2)

Application Number Title Priority Date Filing Date
KR1020227015101A Active KR102859488B1 (ko) 2019-11-29 2020-11-19 촬상 장치 및 전자 기기
KR1020257030066A Pending KR20250136941A (ko) 2019-11-29 2020-11-19 촬상 장치 및 전자 기기

Family Applications After (1)

Application Number Title Priority Date Filing Date
KR1020257030066A Pending KR20250136941A (ko) 2019-11-29 2020-11-19 촬상 장치 및 전자 기기

Country Status (7)

Country Link
US (2) US11973102B2 (https=)
EP (1) EP4068361B1 (https=)
JP (1) JP7676319B2 (https=)
KR (2) KR102859488B1 (https=)
CN (1) CN114667605B (https=)
TW (1) TWI901611B (https=)
WO (1) WO2021106732A1 (https=)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2023032049A (ja) * 2021-08-26 2023-03-09 キオクシア株式会社 半導体装置
WO2023091898A1 (en) * 2021-11-16 2023-05-25 Hsu Fu Chang Advanced structures having mosfet transistors and metal layers
TW202329439A (zh) * 2021-12-10 2023-07-16 日商索尼半導體解決方案公司 光檢測裝置及電子機器
US12327804B2 (en) * 2022-05-13 2025-06-10 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor device and manufacturing method thereof
WO2023243222A1 (ja) * 2022-06-15 2023-12-21 ソニーセミコンダクタソリューションズ株式会社 撮像装置
US12408466B2 (en) 2022-07-11 2025-09-02 Taiwan Semiconductor Manufacturing Company, Ltd. High-speed readout image sensor
TWI884427B (zh) * 2022-08-26 2025-05-21 台灣積體電路製造股份有限公司 影像感測器與其形成方法
US12407957B1 (en) * 2022-12-22 2025-09-02 Apple Inc. Multiple-substrate high conversion gain pixels
US20240250098A1 (en) * 2023-01-25 2024-07-25 Taiwan Semiconductor Manufacturing Company, Ltd. Image sensor device and method of manufacturing the same
WO2025047167A1 (ja) * 2023-08-25 2025-03-06 ソニーセミコンダクタソリューションズ株式会社 光検出装置
WO2025126676A1 (ja) * 2023-12-14 2025-06-19 ソニーセミコンダクタソリューションズ株式会社 固体撮像装置及び電子機器
WO2025142996A1 (ja) * 2023-12-28 2025-07-03 ソニーセミコンダクタソリューションズ株式会社 光検出装置
WO2026023245A1 (ja) * 2024-07-22 2026-01-29 ソニーセミコンダクタソリューションズ株式会社 固体撮像装置

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2011166170A (ja) * 2011-05-16 2011-08-25 Sony Corp 固体撮像装置、固体撮像装置の駆動方法、及び電子機器
WO2017043343A1 (ja) * 2015-09-11 2017-03-16 ソニーセミコンダクタソリューションズ株式会社 固体撮像装置および電子機器
US20180213169A1 (en) 2017-01-23 2018-07-26 Canon Kabushiki Kaisha Solid state imaging device
WO2018186026A1 (ja) * 2017-04-04 2018-10-11 ソニーセミコンダクタソリューションズ株式会社 半導体装置、半導体装置の製造方法、及び電子機器

Family Cites Families (37)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW201101476A (en) * 2005-06-02 2011-01-01 Sony Corp Semiconductor image sensor module and method of manufacturing the same
US7965329B2 (en) * 2008-09-09 2011-06-21 Omnivision Technologies, Inc. High gain read circuit for 3D integrated pixel
JP5985136B2 (ja) * 2009-03-19 2016-09-06 ソニー株式会社 半導体装置とその製造方法、及び電子機器
JP5482025B2 (ja) * 2009-08-28 2014-04-23 ソニー株式会社 固体撮像装置とその製造方法、及び電子機器
JP2012015400A (ja) * 2010-07-02 2012-01-19 Canon Inc 固体撮像装置
JP2012147169A (ja) * 2011-01-11 2012-08-02 Renesas Electronics Corp 固体撮像装置
JP2012156310A (ja) * 2011-01-26 2012-08-16 Sony Corp 固体撮像素子、固体撮像素子の製造方法、および電子機器
JP2013187360A (ja) * 2012-03-08 2013-09-19 Sony Corp 固体撮像装置、及び、電子機器
JP2014022561A (ja) 2012-07-18 2014-02-03 Sony Corp 固体撮像装置、及び、電子機器
JP2014209696A (ja) * 2012-07-23 2014-11-06 ソニー株式会社 固体撮像装置、信号読み出し方法、および電子機器
ES2476115B1 (es) * 2012-12-11 2015-04-20 Consejo Superior De Investigaciones Científicas (Csic) Metodo y dispositivo para la deteccion de la variacion temporal de la intensidad luminosa en una matriz de fotosensores
JP2015032687A (ja) * 2013-08-02 2015-02-16 ソニー株式会社 撮像素子、電子機器、および撮像素子の製造方法
JP6413235B2 (ja) * 2013-12-06 2018-10-31 株式会社ニコン 撮像素子および撮像装置
KR20220100106A (ko) * 2014-06-09 2022-07-14 가부시키가이샤 한도오따이 에네루기 켄큐쇼 촬상 장치
CN107408565B (zh) * 2015-03-03 2021-07-20 索尼公司 半导体装置和电子设备
JP6856974B2 (ja) * 2015-03-31 2021-04-14 ソニーセミコンダクタソリューションズ株式会社 固体撮像素子および電子機器
KR102656723B1 (ko) * 2015-04-07 2024-04-12 소니그룹주식회사 고체 촬상 소자 및 전자 장치
JP6808316B2 (ja) * 2015-12-04 2021-01-06 キヤノン株式会社 撮像装置、および、撮像システム
JP2017117828A (ja) * 2015-12-21 2017-06-29 ソニー株式会社 固体撮像素子および電子装置
JP6832649B2 (ja) * 2016-08-17 2021-02-24 ブリルニクス インク 固体撮像装置、固体撮像装置の駆動方法、および電子機器
CN110050345B (zh) * 2016-12-09 2023-11-14 索尼半导体解决方案公司 固态图像拾取元件和电子装置
US9888197B1 (en) * 2017-01-04 2018-02-06 Semiconductor Components Industries, Llc Methods and apparatus for a CMOS image sensor with an in-pixel amplifier
JP6957157B2 (ja) * 2017-01-26 2021-11-02 キヤノン株式会社 固体撮像装置、撮像システム、および固体撮像装置の製造方法
JP7121468B2 (ja) * 2017-02-24 2022-08-18 ブリルニクス シンガポール プライベート リミテッド 固体撮像装置、固体撮像装置の製造方法、および電子機器
JP2018174231A (ja) * 2017-03-31 2018-11-08 ソニーセミコンダクタソリューションズ株式会社 固体撮像装置、および電子機器
JP2018182462A (ja) * 2017-04-07 2018-11-15 ルネサスエレクトロニクス株式会社 撮像素子
JP2018186211A (ja) * 2017-04-27 2018-11-22 ルネサスエレクトロニクス株式会社 半導体装置およびその製造方法
JP6963873B2 (ja) * 2017-05-26 2021-11-10 ソニーセミコンダクタソリューションズ株式会社 固体撮像素子、固体撮像素子の製造方法および電子機器
JP2018206837A (ja) * 2017-05-31 2018-12-27 ソニーセミコンダクタソリューションズ株式会社 固体撮像装置および固体撮像装置の製造方法、並びに電子機器
JP7064322B2 (ja) * 2017-12-06 2022-05-10 キヤノン株式会社 電子機器およびその制御方法、ならびに撮像素子
WO2019130702A1 (ja) * 2017-12-27 2019-07-04 ソニーセミコンダクタソリューションズ株式会社 撮像装置
JP7118658B2 (ja) * 2018-02-09 2022-08-16 キヤノン株式会社 撮像装置、撮像システム、移動体
JP7080660B2 (ja) * 2018-02-09 2022-06-06 キヤノン株式会社 光電変換装置、撮像システム、および、移動体
WO2019181456A1 (ja) * 2018-03-19 2019-09-26 ソニーセミコンダクタソリューションズ株式会社 固体撮像素子および固体撮像装置
CN112119500B (zh) * 2018-05-21 2025-06-17 索尼公司 固态摄像元件及其制造方法
JP7129646B2 (ja) 2018-06-11 2022-09-02 パナソニックＩｐマネジメント株式会社 制御システム、プログラム
JP2020068289A (ja) * 2018-10-24 2020-04-30 キヤノン株式会社 光電変換装置、撮像システム、移動体、および積層用の半導体チップ

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2011166170A (ja) * 2011-05-16 2011-08-25 Sony Corp 固体撮像装置、固体撮像装置の駆動方法、及び電子機器
WO2017043343A1 (ja) * 2015-09-11 2017-03-16 ソニーセミコンダクタソリューションズ株式会社 固体撮像装置および電子機器
US20180213169A1 (en) 2017-01-23 2018-07-26 Canon Kabushiki Kaisha Solid state imaging device
WO2018186026A1 (ja) * 2017-04-04 2018-10-11 ソニーセミコンダクタソリューションズ株式会社 半導体装置、半導体装置の製造方法、及び電子機器

Also Published As

Publication number Publication date
JP7676319B2 (ja) 2025-05-14
TW202139443A (zh) 2021-10-16
EP4068361A4 (en) 2022-12-28
US20240258356A1 (en) 2024-08-01
KR20250136941A (ko) 2025-09-16
KR20220110182A (ko) 2022-08-05
US11973102B2 (en) 2024-04-30
JPWO2021106732A1 (https=) 2021-06-03
CN114667605A (zh) 2022-06-24
WO2021106732A1 (ja) 2021-06-03
CN114667605B (zh) 2025-08-26
TWI901611B (zh) 2025-10-21
EP4068361B1 (en) 2026-02-25
EP4068361A1 (en) 2022-10-05
US20220392942A1 (en) 2022-12-08

Similar Documents

Publication Publication Date Title
KR102859488B1 (ko) 촬상 장치 및 전자 기기
US20250240549A1 (en) Imaging device
US12191326B2 (en) Solid-state imaging device
KR102805549B1 (ko) 촬상 소자 및 반도체 소자
JP7615246B2 (ja) 撮像装置および電子機器
US12464838B2 (en) Solid-state imaging device and electronic apparatus
US11756971B2 (en) Solid-state imaging element and imaging apparatus
KR20240088707A (ko) 광 검출 소자 및 광 검출 장치
CN114631187B (zh) 固态成像装置和电子设备
US20240088191A1 (en) Photoelectric conversion device and electronic apparatus
US20250040285A1 (en) Imaging device
US20250176298A1 (en) Imaging device
KR20260060369A (ko) 광 검출 장치 및 전자 기기
KR20250166199A (ko) 광 검출 장치 및 전자 기기
WO2024203629A1 (ja) 光検出装置及び電子機器
KR20250165374A (ko) 광 검출 장치 및 전자 기기
KR20260022339A (ko) 광 검출 장치 및 전자 기기

Legal Events

Date Code Title Description
PA0105 International application

St.27 status event code: A-0-1-A10-A15-nap-PA0105

PG1501 Laying open of application

St.27 status event code: A-1-1-Q10-Q12-nap-PG1501

P22-X000 Classification modified

St.27 status event code: A-2-2-P10-P22-nap-X000

P22-X000 Classification modified

St.27 status event code: A-2-2-P10-P22-nap-X000

PA0201 Request for examination

St.27 status event code: A-1-2-D10-D11-exm-PA0201

P22-X000 Classification modified

St.27 status event code: A-2-2-P10-P22-nap-X000

E902 Notification of reason for refusal
PE0902 Notice of grounds for rejection

St.27 status event code: A-1-2-D10-D21-exm-PE0902

P22-X000 Classification modified

St.27 status event code: A-2-2-P10-P22-nap-X000

P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

E701 Decision to grant or registration of patent right
PE0701 Decision of registration

St.27 status event code: A-1-2-D10-D22-exm-PE0701

A16 Divisional, continuation or continuation in part application filed

Free format text: ST27 STATUS EVENT CODE: A-0-1-A10-A16-DIV-PA0104 (AS PROVIDED BY THE NATIONAL OFFICE)

A18 Application divided or continuation or continuation in part accepted

Free format text: ST27 STATUS EVENT CODE: A-0-1-A10-A18-DIV-PA0104 (AS PROVIDED BY THE NATIONAL OFFICE)

PA0104 Divisional application for international application

St.27 status event code: A-0-1-A10-A18-div-PA0104

St.27 status event code: A-0-1-A10-A16-div-PA0104

F11 Ip right granted following substantive examination

Free format text: ST27 STATUS EVENT CODE: A-2-4-F10-F11-EXM-PR0701 (AS PROVIDED BY THE NATIONAL OFFICE)

PR0701 Registration of establishment

St.27 status event code: A-2-4-F10-F11-exm-PR0701

PR1002 Payment of registration fee

St.27 status event code: A-2-2-U10-U12-oth-PR1002

Fee payment year number: 1

U12 Designation fee paid

Free format text: ST27 STATUS EVENT CODE: A-2-2-U10-U12-OTH-PR1002 (AS PROVIDED BY THE NATIONAL OFFICE)

Year of fee payment: 1

PG1601 Publication of registration

St.27 status event code: A-4-4-Q10-Q13-nap-PG1601

Q13 Ip right document published

Free format text: ST27 STATUS EVENT CODE: A-4-4-Q10-Q13-NAP-PG1601 (AS PROVIDED BY THE NATIONAL OFFICE)