TWI889355B - 防護膜、曝光原版、曝光裝置及半導體裝置的製造方法 - Google Patents

防護膜、曝光原版、曝光裝置及半導體裝置的製造方法 Download PDF

Info

Publication number
TWI889355B
TWI889355B TW113119754A TW113119754A TWI889355B TW I889355 B TWI889355 B TW I889355B TW 113119754 A TW113119754 A TW 113119754A TW 113119754 A TW113119754 A TW 113119754A TW I889355 B TWI889355 B TW I889355B
Authority
TW
Taiwan
Prior art keywords
protective film
support frame
exposure
film
original plate
Prior art date
Application number
TW113119754A
Other languages
English (en)
Chinese (zh)
Other versions
TW202436998A (zh
Inventor
小野陽介
Original Assignee
日商三井化學股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 日商三井化學股份有限公司 filed Critical 日商三井化學股份有限公司
Publication of TW202436998A publication Critical patent/TW202436998A/zh
Application granted granted Critical
Publication of TWI889355B publication Critical patent/TWI889355B/zh

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/62—Pellicles, e.g. pellicle assemblies, e.g. having membrane on support frame; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/62—Pellicles, e.g. pellicle assemblies, e.g. having membrane on support frame; Preparation thereof
    • G03F1/64—Pellicles, e.g. pellicle assemblies, e.g. having membrane on support frame; Preparation thereof characterised by the frames, e.g. structure or material, including bonding means therefor
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C26/00—Coating not provided for in groups C23C2/00 - C23C24/00
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C28/00—Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of groups C23C2/00 - C23C26/00 or by combinations of methods provided for in subclasses C23C and C25C or C25D
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70008—Production of exposure light, i.e. light sources
    • G03F7/70033—Production of exposure light, i.e. light sources by plasma extreme ultraviolet [EUV] sources
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70983—Optical system protection, e.g. pellicles or removable covers for protection of mask

Landscapes

  • Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Metallurgy (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Organic Chemistry (AREA)
  • Mechanical Engineering (AREA)
  • Materials Engineering (AREA)
  • Health & Medical Sciences (AREA)
  • Environmental & Geological Engineering (AREA)
  • Public Health (AREA)
  • Plasma & Fusion (AREA)
  • Epidemiology (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Other Surface Treatments For Metallic Materials (AREA)
  • Carbon And Carbon Compounds (AREA)
TW113119754A 2020-08-05 2021-08-04 防護膜、曝光原版、曝光裝置及半導體裝置的製造方法 TWI889355B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2020-133262 2020-08-05
JP2020133262 2020-08-05

Publications (2)

Publication Number Publication Date
TW202436998A TW202436998A (zh) 2024-09-16
TWI889355B true TWI889355B (zh) 2025-07-01

Family

ID=80118068

Family Applications (2)

Application Number Title Priority Date Filing Date
TW113119754A TWI889355B (zh) 2020-08-05 2021-08-04 防護膜、曝光原版、曝光裝置及半導體裝置的製造方法
TW110128704A TWI845855B (zh) 2020-08-05 2021-08-04 防護膜、曝光原版、曝光裝置、防護膜的製造方法及半導體裝置的製造方法

Family Applications After (1)

Application Number Title Priority Date Filing Date
TW110128704A TWI845855B (zh) 2020-08-05 2021-08-04 防護膜、曝光原版、曝光裝置、防護膜的製造方法及半導體裝置的製造方法

Country Status (7)

Country Link
US (2) US12078923B2 (enExample)
EP (1) EP4155430A4 (enExample)
JP (2) JP7307281B2 (enExample)
KR (2) KR102689722B1 (enExample)
CN (1) CN115735160A (enExample)
TW (2) TWI889355B (enExample)
WO (1) WO2022030498A1 (enExample)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2023151129A (ja) * 2022-03-31 2023-10-16 三井化学株式会社 Ｅｕｖリソグラフィ用ペリクル
DE102023105501A1 (de) * 2022-07-27 2024-02-01 Taiwan Semiconductor Manufacturing Co., Ltd. Pellikel für euv-lithografiemasken und verfahren zu deren herstellung

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW201821369A (zh) * 2016-12-13 2018-06-16 行政院原子能委員會核能研究所 用於分離、純化二氧化碳之鎂鐵複合氧化物及其製造方法
WO2019176410A1 (ja) * 2018-03-14 2019-09-19 株式会社カネカ 炭素質膜を含むペリクル及び炭素質膜を含むペリクルの製造方法
JP2019168502A (ja) * 2018-03-22 2019-10-03 三井化学株式会社 カーボンナノチューブ自立膜の製造方法、およびペリクルの製造方法
JP2019174628A (ja) * 2018-03-28 2019-10-10 三井化学株式会社 検査方法、ペリクルの製造方法、および検査装置

Family Cites Families (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02168613A (ja) * 1988-09-30 1990-06-28 Canon Inc Ｘ線透過膜保持枠、ｘ線マスクブランクス、ｘ線マスク構造体及びそれらの製造方法
JP3361429B2 (ja) * 1996-02-29 2003-01-07 スカイアルミニウム株式会社 耐光性に優れた低反射回路転写装置用防塵枠部材およびその製造方法
JPH11167196A (ja) * 1997-12-03 1999-06-22 Shin Etsu Chem Co Ltd リソグラフィー用ペリクル
JP3388162B2 (ja) 1997-12-03 2003-03-17 信越化学工業株式会社 リソグラフィー用ペリクルの製造方法
TWI404675B (zh) 2004-07-27 2013-08-11 Nat Inst Of Advanced Ind Scien 單層奈米碳管及定向單層奈米碳管／塊材構造體暨該等之製造方法／裝置及用途
JP2006184704A (ja) 2004-12-28 2006-07-13 Asahi Kasei Electronics Co Ltd 液晶用大型ペリクル
JP2007005661A (ja) 2005-06-24 2007-01-11 Ses Co Ltd ベベル研磨方法及びベベル研磨装置
JP5657407B2 (ja) 2011-01-31 2015-01-21 旭化成イーマテリアルズ株式会社 ペリクル枠体、ペリクル及びペリクル枠体の製造方法
JP5517360B2 (ja) * 2011-07-05 2014-06-11 信越化学工業株式会社 ペリクル及びその製造方法
JP5742661B2 (ja) * 2011-10-25 2015-07-01 信越化学工業株式会社 ポジ型レジスト組成物及びパターン形成方法
JP6008784B2 (ja) * 2013-04-15 2016-10-19 信越化学工業株式会社 ペリクルフレーム及びその製作方法とペリクル
US9703187B2 (en) * 2013-05-24 2017-07-11 Mitsui Chemicals, Inc. Pellicle and EUV exposure device comprising same
JP2015178250A (ja) 2014-03-19 2015-10-08 日立化成株式会社 シート状乾燥材と支持体付き接着フィルムとを重ねた積層体、及び支持体付き接着フィルムの保存方法
JP6460778B2 (ja) * 2014-12-25 2019-01-30 日本特殊陶業株式会社 ペリクル枠およびペリクル枠の製造方法
WO2016136343A1 (ja) * 2015-02-24 2016-09-01 三井化学株式会社 ペリクル膜、ペリクル枠体、ペリクル、及びその製造方法
JP6509704B2 (ja) * 2015-10-14 2019-05-08 日本特殊陶業株式会社 ペリクル枠およびペリクル枠の製造方法
SG11201811360UA (en) * 2016-06-28 2019-01-30 Mitsui Chemicals Inc Pellicle film, pellicle frame body, pellicle, and method for producing the same
WO2018008594A1 (ja) * 2016-07-05 2018-01-11 三井化学株式会社 ペリクル膜、ペリクル枠体、ペリクル、その製造方法、露光原版、露光装置、半導体装置の製造方法
KR101813186B1 (ko) * 2016-11-30 2017-12-28 삼성전자주식회사 포토마스크용 펠리클과 이를 포함하는 레티클 및 리소그래피용 노광 장치
JP6816170B2 (ja) * 2017-02-17 2021-01-20 三井化学株式会社 ペリクル、露光原版、露光装置、及び半導体装置の製造方法
JP2018180252A (ja) * 2017-04-12 2018-11-15 日本特殊陶業株式会社 ペリクル枠及びその製造方法
EP3404486B1 (en) * 2017-05-15 2021-07-14 IMEC vzw A method for forming a pellicle
JP6787851B2 (ja) * 2017-08-08 2020-11-18 エア・ウォーター株式会社 ペリクルおよびペリクルの製造方法
JP2020133262A (ja) 2019-02-20 2020-08-31 年晶 伴 木造建築物

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW201821369A (zh) * 2016-12-13 2018-06-16 行政院原子能委員會核能研究所 用於分離、純化二氧化碳之鎂鐵複合氧化物及其製造方法
WO2019176410A1 (ja) * 2018-03-14 2019-09-19 株式会社カネカ 炭素質膜を含むペリクル及び炭素質膜を含むペリクルの製造方法
JP2019168502A (ja) * 2018-03-22 2019-10-03 三井化学株式会社 カーボンナノチューブ自立膜の製造方法、およびペリクルの製造方法
JP2019174628A (ja) * 2018-03-28 2019-10-10 三井化学株式会社 検査方法、ペリクルの製造方法、および検査装置

Also Published As

Publication number Publication date
KR20230012050A (ko) 2023-01-25
EP4155430A4 (en) 2025-05-21
US20240385510A1 (en) 2024-11-21
TWI845855B (zh) 2024-06-21
CN115735160A (zh) 2023-03-03
JP2023120441A (ja) 2023-08-29
TW202436998A (zh) 2024-09-16
EP4155430A1 (en) 2023-03-29
KR102689722B1 (ko) 2024-07-31
JPWO2022030498A1 (enExample) 2022-02-10
WO2022030498A1 (ja) 2022-02-10
US12078923B2 (en) 2024-09-03
JP7307281B2 (ja) 2023-07-11
TW202212962A (zh) 2022-04-01
KR20240121338A (ko) 2024-08-08
US20230341763A1 (en) 2023-10-26

Similar Documents

Publication Publication Date Title
JP6781864B2 (ja) ペリクル膜、ペリクル枠体、ペリクル、その製造方法、露光原版、露光装置、半導体装置の製造方法
TWI398723B (zh) 防護薄膜組件及其製造方法
JP7667252B2 (ja) ペリクル、露光原版、露光装置、ペリクルの製造方法、及び半導体装置の製造方法
JP7286870B2 (ja) ペリクル膜、ペリクル、露光原版、露光装置、ペリクルの製造方法及び半導体装置の製造方法
US20090104544A1 (en) Pellicle and method for manufacturing the same
US20240385510A1 (en) Pellicle, exposure original plate, exposure apparatus, method of manufacturing pellicle, and method of manufacturing semiconductor device
TW201502696A (zh) 防護薄膜組件、含有其的ｅｕｖ曝光裝置、曝光原版以及曝光方法
CN108269735A (zh) 石墨烯膜的制造方法和使用它的表膜构件的制造方法
KR20130088565A (ko) 그래핀을 이용한 초극자외선용 펠리클 및 그 제조방법
TWI776625B (zh) 防護組件及形成倍縮光罩組件及增加防護薄膜壽命的方法
TW202238260A (zh) 防護膜組件、曝光原版、曝光裝置、防護膜組件的製造方法及半導體裝置的製造方法
JP5338556B2 (ja) フォトマスクブランクスの洗浄方法
CN115836248A (zh) 防护膜组件、曝光原版、曝光装置、防护膜组件的制造方法和半导体装置的制造方法
JP2022148581A (ja) ペリクル膜、ペリクル、露光原版、露光装置及び半導体装置の製造方法
TWI906338B (zh) 防護膜、曝光原版、曝光裝置、防護膜的製造方法及半導體裝置的製造方法
TWI901504B (zh) 防塵薄膜、防塵薄膜組件框體、防塵薄膜組件、其製造方法、曝光原版、曝光裝置、半導體裝置的製造方法