KR102689722B1 - 펠리클, 노광 원판, 노광 장치, 펠리클의 제조 방법 및 반도체 장치의 제조 방법 - Google Patents

펠리클, 노광 원판, 노광 장치, 펠리클의 제조 방법 및 반도체 장치의 제조 방법 Download PDF

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Publication number
KR102689722B1
KR102689722B1 KR1020227044419A KR20227044419A KR102689722B1 KR 102689722 B1 KR102689722 B1 KR 102689722B1 KR 1020227044419 A KR1020227044419 A KR 1020227044419A KR 20227044419 A KR20227044419 A KR 20227044419A KR 102689722 B1 KR102689722 B1 KR 102689722B1
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South Korea
Prior art keywords
pellicle
film
support frame
original plate
exposure
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Korean (ko)
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KR20230012050A (ko
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유스케 오노
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미쯔이가가꾸가부시끼가이샤
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/62—Pellicles, e.g. pellicle assemblies, e.g. having membrane on support frame; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/62—Pellicles, e.g. pellicle assemblies, e.g. having membrane on support frame; Preparation thereof
    • G03F1/64—Pellicles, e.g. pellicle assemblies, e.g. having membrane on support frame; Preparation thereof characterised by the frames, e.g. structure or material, including bonding means therefor
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C26/00—Coating not provided for in groups C23C2/00 - C23C24/00
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C28/00—Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of groups C23C2/00 - C23C26/00 or by combinations of methods provided for in subclasses C23C and C25C or C25D
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70008—Production of exposure light, i.e. light sources
    • G03F7/70033—Production of exposure light, i.e. light sources by plasma extreme ultraviolet [EUV] sources
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70983—Optical system protection, e.g. pellicles or removable covers for protection of mask

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  • Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Metallurgy (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Organic Chemistry (AREA)
  • Mechanical Engineering (AREA)
  • Materials Engineering (AREA)
  • Health & Medical Sciences (AREA)
  • Environmental & Geological Engineering (AREA)
  • Public Health (AREA)
  • Plasma & Fusion (AREA)
  • Epidemiology (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Carbon And Carbon Compounds (AREA)
  • Other Surface Treatments For Metallic Materials (AREA)
KR1020227044419A 2020-08-05 2021-08-03 펠리클, 노광 원판, 노광 장치, 펠리클의 제조 방법 및 반도체 장치의 제조 방법 Active KR102689722B1 (ko)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1020247025075A KR20240121338A (ko) 2020-08-05 2021-08-03 펠리클, 노광 원판, 노광 장치, 펠리클의 제조 방법 및 반도체 장치의 제조 방법

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JPJP-P-2020-133262 2020-08-05
JP2020133262 2020-08-05
PCT/JP2021/028798 WO2022030498A1 (ja) 2020-08-05 2021-08-03 ペリクル、露光原版、露光装置、ペリクルの製造方法及び半導体装置の製造方法

Related Child Applications (1)

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KR1020247025075A Division KR20240121338A (ko) 2020-08-05 2021-08-03 펠리클, 노광 원판, 노광 장치, 펠리클의 제조 방법 및 반도체 장치의 제조 방법

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KR20230012050A KR20230012050A (ko) 2023-01-25
KR102689722B1 true KR102689722B1 (ko) 2024-07-31

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KR1020247025075A Pending KR20240121338A (ko) 2020-08-05 2021-08-03 펠리클, 노광 원판, 노광 장치, 펠리클의 제조 방법 및 반도체 장치의 제조 방법
KR1020227044419A Active KR102689722B1 (ko) 2020-08-05 2021-08-03 펠리클, 노광 원판, 노광 장치, 펠리클의 제조 방법 및 반도체 장치의 제조 방법

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Country Status (7)

Country Link
US (2) US12078923B2 (enExample)
EP (1) EP4155430A4 (enExample)
JP (2) JP7307281B2 (enExample)
KR (2) KR20240121338A (enExample)
CN (1) CN115735160A (enExample)
TW (2) TWI845855B (enExample)
WO (1) WO2022030498A1 (enExample)

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DE102023105501A1 (de) * 2022-07-27 2024-02-01 Taiwan Semiconductor Manufacturing Co., Ltd. Pellikel für euv-lithografiemasken und verfahren zu deren herstellung

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Publication number Publication date
JP2023120441A (ja) 2023-08-29
TWI889355B (zh) 2025-07-01
WO2022030498A1 (ja) 2022-02-10
EP4155430A1 (en) 2023-03-29
US20230341763A1 (en) 2023-10-26
KR20230012050A (ko) 2023-01-25
JPWO2022030498A1 (enExample) 2022-02-10
EP4155430A4 (en) 2025-05-21
TW202212962A (zh) 2022-04-01
TW202436998A (zh) 2024-09-16
JP7307281B2 (ja) 2023-07-11
US20240385510A1 (en) 2024-11-21
CN115735160A (zh) 2023-03-03
US12078923B2 (en) 2024-09-03
KR20240121338A (ko) 2024-08-08
TWI845855B (zh) 2024-06-21

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