JP7307281B2 - ペリクル、露光原版、露光装置、ペリクルの製造方法及び半導体装置の製造方法 - Google Patents

ペリクル、露光原版、露光装置、ペリクルの製造方法及び半導体装置の製造方法 Download PDF

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Publication number
JP7307281B2
JP7307281B2 JP2022541568A JP2022541568A JP7307281B2 JP 7307281 B2 JP7307281 B2 JP 7307281B2 JP 2022541568 A JP2022541568 A JP 2022541568A JP 2022541568 A JP2022541568 A JP 2022541568A JP 7307281 B2 JP7307281 B2 JP 7307281B2
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pellicle
support frame
film
exposure
membrane
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JPWO2022030498A5 (enExample
JPWO2022030498A1 (enExample
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陽介 小野
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Mitsui Chemicals Inc
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Mitsui Chemicals Inc
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/62—Pellicles, e.g. pellicle assemblies, e.g. having membrane on support frame; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/62—Pellicles, e.g. pellicle assemblies, e.g. having membrane on support frame; Preparation thereof
    • G03F1/64—Pellicles, e.g. pellicle assemblies, e.g. having membrane on support frame; Preparation thereof characterised by the frames, e.g. structure or material, including bonding means therefor
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C26/00—Coating not provided for in groups C23C2/00 - C23C24/00
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C28/00—Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of groups C23C2/00 - C23C26/00 or by combinations of methods provided for in subclasses C23C and C25C or C25D
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70008—Production of exposure light, i.e. light sources
    • G03F7/70033—Production of exposure light, i.e. light sources by plasma extreme ultraviolet [EUV] sources
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70983—Optical system protection, e.g. pellicles or removable covers for protection of mask

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  • Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Environmental & Geological Engineering (AREA)
  • Health & Medical Sciences (AREA)
  • Plasma & Fusion (AREA)
  • Epidemiology (AREA)
  • Public Health (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Carbon And Carbon Compounds (AREA)
  • Other Surface Treatments For Metallic Materials (AREA)
JP2022541568A 2020-08-05 2021-08-03 ペリクル、露光原版、露光装置、ペリクルの製造方法及び半導体装置の製造方法 Active JP7307281B2 (ja)

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JP2023107557A JP2023120441A (ja) 2020-08-05 2023-06-29 ペリクル、露光原版、露光装置、ペリクルの製造方法及び半導体装置の製造方法

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JP2020133262 2020-08-05
JP2020133262 2020-08-05
PCT/JP2021/028798 WO2022030498A1 (ja) 2020-08-05 2021-08-03 ペリクル、露光原版、露光装置、ペリクルの製造方法及び半導体装置の製造方法

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JP7307281B2 true JP7307281B2 (ja) 2023-07-11

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JP2023107557A Pending JP2023120441A (ja) 2020-08-05 2023-06-29 ペリクル、露光原版、露光装置、ペリクルの製造方法及び半導体装置の製造方法

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US (2) US12078923B2 (enExample)
EP (1) EP4155430A4 (enExample)
JP (2) JP7307281B2 (enExample)
KR (2) KR20240121338A (enExample)
CN (1) CN115735160A (enExample)
TW (2) TWI845855B (enExample)
WO (1) WO2022030498A1 (enExample)

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* Cited by examiner, † Cited by third party
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JP2023151129A (ja) * 2022-03-31 2023-10-16 三井化学株式会社 Ｅｕｖリソグラフィ用ペリクル
DE102023105501A1 (de) * 2022-07-27 2024-02-01 Taiwan Semiconductor Manufacturing Co., Ltd. Pellikel für euv-lithografiemasken und verfahren zu deren herstellung

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JP2006184704A (ja) 2004-12-28 2006-07-13 Asahi Kasei Electronics Co Ltd 液晶用大型ペリクル
JP2017076024A (ja) 2015-10-14 2017-04-20 日本特殊陶業株式会社 ペリクル枠およびペリクル枠の製造方法
JP2019168502A (ja) 2018-03-22 2019-10-03 三井化学株式会社 カーボンナノチューブ自立膜の製造方法、およびペリクルの製造方法
JP2019174628A (ja) 2018-03-28 2019-10-10 三井化学株式会社 検査方法、ペリクルの製造方法、および検査装置

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JP2006184704A (ja) 2004-12-28 2006-07-13 Asahi Kasei Electronics Co Ltd 液晶用大型ペリクル
JP2017076024A (ja) 2015-10-14 2017-04-20 日本特殊陶業株式会社 ペリクル枠およびペリクル枠の製造方法
JP2019168502A (ja) 2018-03-22 2019-10-03 三井化学株式会社 カーボンナノチューブ自立膜の製造方法、およびペリクルの製造方法
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US12078923B2 (en) 2024-09-03
KR20240121338A (ko) 2024-08-08
TW202212962A (zh) 2022-04-01
TWI845855B (zh) 2024-06-21
CN115735160A (zh) 2023-03-03
JP2023120441A (ja) 2023-08-29
KR102689722B1 (ko) 2024-07-31
US20230341763A1 (en) 2023-10-26
WO2022030498A1 (ja) 2022-02-10
TWI889355B (zh) 2025-07-01
EP4155430A1 (en) 2023-03-29
TW202436998A (zh) 2024-09-16
EP4155430A4 (en) 2025-05-21
KR20230012050A (ko) 2023-01-25
US20240385510A1 (en) 2024-11-21
JPWO2022030498A1 (enExample) 2022-02-10

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