TWI888481B - 加工方法及加工裝置 - Google Patents

加工方法及加工裝置 Download PDF

Info

Publication number
TWI888481B
TWI888481B TW110104168A TW110104168A TWI888481B TW I888481 B TWI888481 B TW I888481B TW 110104168 A TW110104168 A TW 110104168A TW 110104168 A TW110104168 A TW 110104168A TW I888481 B TWI888481 B TW I888481B
Authority
TW
Taiwan
Prior art keywords
grinding
substrate
polishing
unit
wafer
Prior art date
Application number
TW110104168A
Other languages
English (en)
Chinese (zh)
Other versions
TW202137317A (zh
Inventor
坂上貴志
Original Assignee
日商東京威力科創股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 日商東京威力科創股份有限公司 filed Critical 日商東京威力科創股份有限公司
Publication of TW202137317A publication Critical patent/TW202137317A/zh
Application granted granted Critical
Publication of TWI888481B publication Critical patent/TWI888481B/zh

Links

Images

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B49/00—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation
    • B24B49/02—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation according to the instantaneous size and required size of the workpiece acted upon, the measuring or gauging being continuous or intermittent
    • B24B49/04—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation according to the instantaneous size and required size of the workpiece acted upon, the measuring or gauging being continuous or intermittent involving measurement of the workpiece at the place of grinding during grinding operation
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B1/00—Processes of grinding or polishing; Use of auxiliary equipment in connection with such processes
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B49/00—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation
    • B24B49/02—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation according to the instantaneous size and required size of the workpiece acted upon, the measuring or gauging being continuous or intermittent
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B51/00—Arrangements for automatic control of a series of individual steps in grinding a workpiece
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B7/00—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B7/00—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor
    • B24B7/20—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor characterised by a special design with respect to properties of the material of non-metallic articles to be ground
    • B24B7/22—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor characterised by a special design with respect to properties of the material of non-metallic articles to be ground for grinding inorganic material, e.g. stone, ceramics, porcelain
    • B24B7/228—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor characterised by a special design with respect to properties of the material of non-metallic articles to be ground for grinding inorganic material, e.g. stone, ceramics, porcelain for grinding thin, brittle parts, e.g. semiconductors, wafers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0428—Apparatus for mechanical treatment or grinding or cutting
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0451—Apparatus for manufacturing or treating in a plurality of work-stations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0451—Apparatus for manufacturing or treating in a plurality of work-stations
    • H10P72/0452—Apparatus for manufacturing or treating in a plurality of work-stations characterised by the layout of the process chambers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0451—Apparatus for manufacturing or treating in a plurality of work-stations
    • H10P72/0461—Apparatus for manufacturing or treating in a plurality of work-stations characterised by the presence of two or more transfer chambers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/76—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches
    • H10P72/7604—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support
    • H10P72/7612—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support characterised by lifting arrangements, e.g. lift pins
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/76—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches
    • H10P72/7604—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support
    • H10P72/7621—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support characterised by supporting two or more semiconductor substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/76—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches
    • H10P72/7604—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support
    • H10P72/7624—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support characterised by the mechanical construction of the susceptor, stage or support
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/76—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches
    • H10P72/7604—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support
    • H10P72/7626—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support characterised by the construction of the shaft
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • H10P74/20—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by the properties tested or measured, e.g. structural or electrical properties
    • H10P74/203—Structural properties, e.g. testing or measuring thicknesses, line widths, warpage, bond strengths or physical defects

Landscapes

  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Ceramic Engineering (AREA)
  • Inorganic Chemistry (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Grinding Of Cylindrical And Plane Surfaces (AREA)
  • Constituent Portions Of Griding Lathes, Driving, Sensing And Control (AREA)
TW110104168A 2020-02-17 2021-02-04 加工方法及加工裝置 TWI888481B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2020-024474 2020-02-17
JP2020024474 2020-02-17

Publications (2)

Publication Number Publication Date
TW202137317A TW202137317A (zh) 2021-10-01
TWI888481B true TWI888481B (zh) 2025-07-01

Family

ID=77391952

Family Applications (1)

Application Number Title Priority Date Filing Date
TW110104168A TWI888481B (zh) 2020-02-17 2021-02-04 加工方法及加工裝置

Country Status (6)

Country Link
US (1) US12528153B2 (https=)
JP (3) JP7466622B2 (https=)
KR (2) KR20250090358A (https=)
CN (2) CN118322002A (https=)
TW (1) TWI888481B (https=)
WO (1) WO2021166668A1 (https=)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI898454B (zh) * 2024-02-29 2025-09-21 東台精機股份有限公司 晶圓研磨裝置及晶圓研磨方法

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH09174394A (ja) * 1995-12-27 1997-07-08 Komatsu Electron Metals Co Ltd 半導体ウェハの研磨方法
JP2005313297A (ja) * 2004-04-30 2005-11-10 Tdk Corp 焼結薄板の製造方法
WO2020012951A1 (ja) * 2018-07-09 2020-01-16 東京エレクトロン株式会社 加工装置、加工方法及びコンピュータ記憶媒体

Family Cites Families (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3037857B2 (ja) 1993-10-28 2000-05-08 新日本製鐵株式会社 ベルト研削方法およびベルト研削装置
JPH11309653A (ja) 1998-04-27 1999-11-09 Tokyo Seimitsu Co Ltd ウェーハの平面加工装置
JP3768069B2 (ja) * 2000-05-16 2006-04-19 信越半導体株式会社 半導体ウエーハの薄型化方法
JP3507794B2 (ja) * 2000-12-25 2004-03-15 日本電気株式会社 半導体装置の製造方法
JP2006021264A (ja) * 2004-07-07 2006-01-26 Disco Abrasive Syst Ltd 研削装置
JP5276823B2 (ja) 2007-10-04 2013-08-28 株式会社ディスコ ウェーハの研削加工装置
JP2010194680A (ja) * 2009-02-25 2010-09-09 Disco Abrasive Syst Ltd ワーク加工方法およびワーク加工装置
JP5788304B2 (ja) 2011-12-06 2015-09-30 株式会社ディスコ 研削装置
JP6111893B2 (ja) * 2013-06-26 2017-04-12 株式会社Sumco 半導体ウェーハの加工プロセス
JP6158642B2 (ja) * 2013-08-22 2017-07-05 株式会社ディスコ 研削方法
JP2015160260A (ja) * 2014-02-26 2015-09-07 株式会社東芝 研削装置及び研削方法
JP6377433B2 (ja) * 2014-07-04 2018-08-22 株式会社ディスコ 研削方法
JP6377459B2 (ja) * 2014-08-29 2018-08-22 株式会社ディスコ ウエーハ検査方法、研削研磨装置
JP6676284B2 (ja) * 2015-04-08 2020-04-08 株式会社東京精密 ワーク加工装置
US9656370B2 (en) * 2015-10-06 2017-05-23 Disco Corporation Grinding method
CN106563980B (zh) 2015-10-12 2020-04-10 株式会社迪思科 磨削方法
JP6802012B2 (ja) * 2016-09-02 2020-12-16 株式会社ディスコ 計測装置
JP6752367B2 (ja) * 2017-06-21 2020-09-09 東京エレクトロン株式会社 基板処理システム、基板処理方法及びコンピュータ記憶媒体
JP6917233B2 (ja) * 2017-07-25 2021-08-11 株式会社ディスコ ウエーハの加工方法
JP7046573B2 (ja) * 2017-11-27 2022-04-04 株式会社ディスコ 被加工物の加工方法
JP6968201B2 (ja) * 2017-12-22 2021-11-17 東京エレクトロン株式会社 基板処理システム、基板処理方法及びコンピュータ記憶媒体
JP7049848B2 (ja) * 2018-02-08 2022-04-07 株式会社ディスコ 保持面の研削方法

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH09174394A (ja) * 1995-12-27 1997-07-08 Komatsu Electron Metals Co Ltd 半導体ウェハの研磨方法
JP2005313297A (ja) * 2004-04-30 2005-11-10 Tdk Corp 焼結薄板の製造方法
WO2020012951A1 (ja) * 2018-07-09 2020-01-16 東京エレクトロン株式会社 加工装置、加工方法及びコンピュータ記憶媒体

Also Published As

Publication number Publication date
KR20220137114A (ko) 2022-10-11
KR102817756B1 (ko) 2025-06-09
JP7466622B2 (ja) 2024-04-12
CN115066314A (zh) 2022-09-16
US20230060918A1 (en) 2023-03-02
TW202536952A (zh) 2025-09-16
KR20250090358A (ko) 2025-06-19
US12528153B2 (en) 2026-01-20
CN115066314B (zh) 2024-05-28
JP7657353B2 (ja) 2025-04-04
JP2025089474A (ja) 2025-06-12
JPWO2021166668A1 (https=) 2021-08-26
TW202137317A (zh) 2021-10-01
JP2024091657A (ja) 2024-07-05
WO2021166668A1 (ja) 2021-08-26
TW202536953A (zh) 2025-09-16
CN118322002A (zh) 2024-07-12

Similar Documents

Publication Publication Date Title
TWI871372B (zh) 基板處理方法及基板處理裝置
WO2018235619A1 (ja) 基板処理システム、基板処理方法及びコンピュータ記憶媒体
TW202025271A (zh) 基板處理裝置及基板處理方法
JPWO2019124031A1 (ja) 基板処理システム、基板処理方法及びコンピュータ記憶媒体
JPWO2019013037A1 (ja) 研削装置、研削方法及びコンピュータ記憶媒体
JPWO2019013042A1 (ja) 基板処理システム、基板処理方法及びコンピュータ記憶媒体
JP2019021859A (ja) 基板処理システム
JP6968201B2 (ja) 基板処理システム、基板処理方法及びコンピュータ記憶媒体
TWI888481B (zh) 加工方法及加工裝置
TWI922325B (zh) 加工方法及加工裝置
TWI922326B (zh) 加工方法及加工裝置
JP7288373B2 (ja) 研削装置、研削砥石、および研削方法
JP7653269B2 (ja) 処理方法及び処理装置
TWI874482B (zh) 基板處理方法及基板處理裝置
JP2021137883A (ja) セルフグラインド方法及び加工装置
US20260124714A1 (en) Processing method and processing apparatus
JP7369645B2 (ja) 加工方法及び加工装置
TW202506332A (zh) 研磨裝置、傾斜調整方法及資訊顯示部
JP2024068111A (ja) 加工装置