WO2021166668A1 - 加工方法及び加工装置 - Google Patents
加工方法及び加工装置 Download PDFInfo
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- WO2021166668A1 WO2021166668A1 PCT/JP2021/004173 JP2021004173W WO2021166668A1 WO 2021166668 A1 WO2021166668 A1 WO 2021166668A1 JP 2021004173 W JP2021004173 W JP 2021004173W WO 2021166668 A1 WO2021166668 A1 WO 2021166668A1
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- Prior art keywords
- grinding
- substrate
- wafer
- unit
- finish
- Prior art date
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- 238000003672 processing method Methods 0.000 title claims description 15
- 238000000034 method Methods 0.000 claims abstract description 147
- 239000000758 substrate Substances 0.000 claims abstract description 109
- 230000008569 process Effects 0.000 claims description 140
- 238000009826 distribution Methods 0.000 claims description 38
- 238000005498 polishing Methods 0.000 abstract 10
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- 238000003860 storage Methods 0.000 description 4
- 230000008859 change Effects 0.000 description 3
- 230000000052 comparative effect Effects 0.000 description 3
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- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
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- 230000001681 protective effect Effects 0.000 description 1
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Images
Classifications
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B49/00—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation
- B24B49/02—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation according to the instantaneous size and required size of the workpiece acted upon, the measuring or gauging being continuous or intermittent
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B49/00—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation
- B24B49/02—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation according to the instantaneous size and required size of the workpiece acted upon, the measuring or gauging being continuous or intermittent
- B24B49/04—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation according to the instantaneous size and required size of the workpiece acted upon, the measuring or gauging being continuous or intermittent involving measurement of the workpiece at the place of grinding during grinding operation
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B51/00—Arrangements for automatic control of a series of individual steps in grinding a workpiece
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B7/00—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B7/00—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor
- B24B7/20—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor characterised by a special design with respect to properties of the material of non-metallic articles to be ground
- B24B7/22—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor characterised by a special design with respect to properties of the material of non-metallic articles to be ground for grinding inorganic material, e.g. stone, ceramics, porcelain
- B24B7/228—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor characterised by a special design with respect to properties of the material of non-metallic articles to be ground for grinding inorganic material, e.g. stone, ceramics, porcelain for grinding thin, brittle parts, e.g. semiconductors, wafers
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
- H01L21/67161—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the layout of the process chambers
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- H01L21/67011—Apparatus for manufacture or treatment
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- H01L21/67184—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the presence of more than one transfer chamber
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- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68742—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a lifting arrangement, e.g. lift pins
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- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68771—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by supporting more than one semiconductor substrate
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- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68785—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by the mechanical construction of the susceptor, stage or support
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- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68792—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by the construction of the shaft
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- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/10—Measuring as part of the manufacturing process
- H01L22/12—Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions
Definitions
- This disclosure relates to a processing method and a processing apparatus.
- Patent Document 1 discloses a wafer grinding apparatus including a wafer grinding means, an inclination adjusting means for adjusting the inclination of the rotation axis of the grinding means, and a grinding condition storage means for storing the grinding conditions of the wafer. Has been done. According to the grinding apparatus described in Patent Document 1, variation in wafer thickness can be minimized by adjusting the inclination of the rotation axis of the grinding means based on the information stored in the grinding condition storage means. I'm trying.
- the technology according to the present disclosure appropriately improves the flatness of the substrate after the grinding process.
- One aspect of the present disclosure is a method of processing a substrate in a processing apparatus, wherein the substrate is subjected to a first grinding process in a first grinding portion and a second grinding is performed on the substrate in a second grinding portion.
- the process includes performing a first regrinding treatment on the substrate in the first grinding portion, and performing a second regrinding treatment on the substrate in the second grinding portion.
- the substrate is finish-ground to the final finish thickness in the second regrinding process.
- the flatness of the substrate after the grinding process can be appropriately improved.
- first substrate a semiconductor substrate in which devices such as a plurality of electronic circuits are formed on the surface and a second substrate are bonded
- second substrate a semiconductor substrate in which devices such as a plurality of electronic circuits are formed on the surface and a second substrate are bonded
- the back surface of the first substrate is ground to make it thinner.
- the thinning of the first substrate is performed by bringing a grinding wheel into contact with the back surface of the first substrate in a state where the back surface of the second substrate is held by the substrate holding portion and grinding.
- the flatness (TTV: Total Stickness Variation) of the first substrate may be deteriorated. Specifically, for example, when the processing apparatus is temporarily put into a standby state due to replacement of the grinding wheel for grinding the first substrate, or when the grinding conditions in the processing apparatus are changed, before and after the standby of the processing apparatus.
- the parallelism between the grinding wheel and the substrate holding surface changes due to changes in the device characteristics and environmental characteristics (for example, changes in the device temperature and atmospheric temperature, changes in the surface condition of the grinding wheel, etc.) before and after the change in grinding conditions.
- the device characteristics and environmental characteristics for example, changes in the device temperature and atmospheric temperature, changes in the surface condition of the grinding wheel, etc.
- Patent Document 1 The processing method described in Patent Document 1 described above is a grinding apparatus for grinding a first substrate (wafer) with a uniform thickness by adjusting the inclination of the rotation axis of a grinding wheel (grinding means). ..
- Patent Document 1 does not describe at all about considering the device characteristics and environmental characteristics before and after the standby state of the processing device as described above. Further, in the method described in Patent Document 1, it is necessary to grind a substrate (for example, a dummy wafer) for adjusting the inclination of the rotating shaft of the grinding wheel (grinding means), and it takes time to adjust the inclination of the rotating shaft. , It was necessary to discard the substrate used for tilt adjustment. As described above, there is room for improvement in the conventional grinding process of the substrate.
- the technique according to the present disclosure appropriately improves the flatness of the substrate after the grinding process. Specifically, the flatness of the first substrate held by the substrate holding portion is appropriately improved, particularly after returning from the standby state of the processing apparatus or changing the grinding conditions.
- the processing apparatus and the processing method according to the present embodiment will be described with reference to the drawings.
- elements having substantially the same functional configuration are designated by the same reference numerals, so that duplicate description will be omitted.
- the processing apparatus 1 As a polymerization substrate in which the first wafer W as the first substrate and the second wafer S as the second substrate are bonded.
- the polymerized wafer T is processed.
- the first wafer W is thinned.
- the surface on the side bonded to the second wafer S is referred to as a front surface Wa
- the surface opposite to the front surface Wa is referred to as a back surface Wb.
- the surface on the side joined to the first wafer W is referred to as the front surface Sa
- the surface opposite to the front surface Sa is referred to as the back surface Sb.
- the first wafer W is a semiconductor wafer such as a silicon substrate, and a device layer D including a plurality of devices is formed on the surface Wa.
- a surface film Fw is further formed on the device layer D, and is bonded to the second wafer S via the surface film Fw.
- the surface film Fw include an oxide film (SiO 2 film, TEOS film), a SiC film, a SiCN film, and an adhesive.
- the second wafer S is, for example, a wafer that supports the first wafer W.
- Surface films Fs are formed on the surface Sa of the second wafer S, and the peripheral edge is chamfered.
- the surface film Fs include an oxide film (SiO 2 film, TEOS film), a SiC film, a SiCN film, and an adhesive.
- the second wafer S functions as a protective material (support wafer) for protecting the device layer D of the first wafer W.
- the second wafer S does not have to be a support wafer, and may be a device wafer on which a device layer is formed as in the first wafer W. In such a case, the surface film Fs is formed on the surface Sa of the second wafer S via the device layer.
- the device layer D and the surface films Fw and Fs may be omitted in order to avoid the complexity of the illustration.
- the processing apparatus 1 has a configuration in which the loading / unloading station 2 and the processing station 3 are integrally connected.
- a cassette Ct capable of accommodating a plurality of polymerized wafers T is loaded / unloaded from the outside.
- the processing station 3 is provided with various processing devices that perform desired processing on the polymerized wafer T.
- the loading / unloading station 2 is provided with a cassette mounting stand 10.
- a cassette mounting stand 10 In the illustrated example, a plurality of cassette Cts, for example, four cassettes Ct can be freely mounted in a row in the X-axis direction on the cassette mounting table 10.
- the number of cassettes Ct mounted on the cassette mounting table 10 is not limited to this embodiment and can be arbitrarily determined.
- the loading / unloading station 2 is provided with a wafer transfer area 20 adjacent to the cassette mounting table 10 on the Y-axis positive direction side of the cassette mounting table 10.
- the wafer transfer region 20 is provided with a wafer transfer device 22 configured to be movable on a transfer path 21 extending in the X-axis direction.
- the wafer transfer device 22 has a transfer fork 23 that holds and conveys the polymerized wafer T before and after the grinding process.
- the tip of the transport fork 23 is branched into two, and the polymerized wafer T is sucked and held. Further, the transport fork 23 is configured to be movable in the horizontal direction, the vertical direction, the horizontal axis, and the vertical axis.
- the configuration of the wafer transfer device 22 is not limited to this embodiment, and any configuration can be adopted.
- the wafer transfer device 22 is configured to be able to transfer the polymerized wafer T to the cassette Ct of the cassette mounting table 10, the alignment unit 50, and the first cleaning unit 60.
- the processing station 3 includes a transport unit 30 for transporting the polymerized wafer T, a grinding unit 40 for grinding the first wafer W, an alignment unit 50 for adjusting the horizontal orientation of the polymerized wafer T before the grinding process, and grinding. It has a first cleaning unit 60 that spin-cleans the first wafer W after processing, and a second cleaning unit 70 that cleans the back surface Sb of the second wafer S after grinding.
- the transport unit 30 is an articulated robot provided with a plurality of, for example, three arms 31. Each of the three arms 31 is configured to be rotatable. A transport pad 32 that attracts and holds the polymerized wafer T is attached to the arm 31 at the tip. Further, the base end arm 31 is attached to an elevating mechanism 33 that elevates and elevates the arm 31 in the vertical direction.
- the configuration of the transport unit 30 is not limited to this embodiment, and any configuration can be adopted.
- the transfer unit 30 is configured to be able to transfer the polymerized wafer T to the delivery position A0, the alignment unit 50, the first cleaning unit 60, and the second cleaning unit 70 of the grinding unit 40, which will be described later. ..
- the grinding unit 40 is provided with a rotary table 41.
- Four chucks 42 for sucking and holding the polymerized wafer T are provided on the rotary table 41.
- the four chucks 42 can be moved to the delivery position A0 and the processing positions A1 to A3 by rotating the rotary table 41. Further, each of the four chucks 42 is configured to be rotatable around a vertical axis by a rotation mechanism (not shown).
- the polymerized wafer T is delivered by the transport unit 30.
- a rough grinding unit 80 is arranged at the processing position A1 to roughly grind the first wafer W.
- a medium grinding unit 90 is arranged at the processing position A2 to perform medium grinding of the first wafer W.
- a finish grinding unit 100 is arranged at the processing position A3 to finish grind the first wafer W.
- a porous chuck is used for the chuck 42 to suck and hold the back surface Sb of the second wafer S forming the polymerization wafer T.
- the surface of the chuck 42 that is, the holding surface of the polymerized wafer T, has a convex shape in which the central portion protrudes from the end portion in a side view. Since the protrusion at the center is very small, the convex shape of the chuck 42 is omitted in the drawing.
- the chuck 42 is held by the chuck base 43.
- the chuck base 43 is provided with an inclination adjusting portion 44 for adjusting the inclination of the chuck 42 and the chuck base 43 from the horizontal direction.
- the tilt adjusting unit 44 has a fixed shaft 45 and a plurality of elevating shafts 46 provided on the lower surface of the chuck base 43.
- Each elevating shaft 46 is configured to be expandable and contractible, and elevates and elevates the chuck base 43.
- the tilt adjusting portion 44 raises and lowers the other end of the chuck base 43 in the vertical direction by the elevating shaft 46 from one end (position corresponding to the fixed shaft 45) of the outer peripheral portion of the chuck base 43, whereby the chuck 42 and the chuck base are raised and lowered.
- the configuration of the inclination adjusting unit 44 is not limited to this, and can be arbitrarily selected as long as the relative angle (parallelism) of the first wafer W with respect to the grinding wheel can be adjusted.
- the rough grinding unit 80 as the rough grinding processing unit or the first grinding unit includes a rough grinding wheel 81 having an annular rough grinding wheel on the lower surface, and a mount 82 supporting the rough grinding wheel 81. It has a spindle 83 that rotates the rough grinding wheel 81 via the mount 82, and a drive unit 84 that incorporates, for example, a motor (not shown). Further, the rough grinding unit 80 is configured to be movable in the vertical direction and the horizontal direction along the support column 85 shown in FIG.
- the chuck 42 and the rough grinding wheel 81 are brought into contact with the first wafer W of the polymerized wafer T held by the chuck 42 and a part of the arc of the annular rough grinding wheel. By rotating each of them, the back surface Wb of the first wafer W is roughly ground.
- the medium grinding unit 90 as the first grinding unit has the same configuration as the rough grinding unit 80. That is, the medium grinding unit 90 has a medium grinding wheel 91 including an annular medium grinding wheel, a mount 92, a spindle 93, a drive unit 94, and a support column 95.
- the particle size of the abrasive grains of the medium grinding wheel is smaller than the particle size of the abrasive grains of the coarse grinding wheel.
- the finish grinding unit 100 as the second grinding unit has the same configuration as the rough grinding unit 80 and the medium grinding unit 90. That is, the finish grinding unit 100 has a finish grinding wheel 101 including an annular finish grinding wheel, a mount 102, a spindle 103, a drive unit 104, and a support column 105.
- the particle size of the abrasive grains of the finishing grinding wheel is smaller than the particle size of the abrasive grains of the medium grinding wheel.
- the processing station 3 is provided with a thickness measuring unit 110 as a thickness distribution measuring unit for measuring the thickness of the first wafer W after the grinding process by the finishing grinding unit 100 is completed.
- the thickness measuring unit 110 is provided at, for example, the processing position A3 or the delivery position A0.
- the thickness measuring unit 110 includes, for example, a non-contact type sensor (not shown) and a calculation unit (not shown). Then, the thickness measuring unit 110 acquires the thickness distribution of the first wafer W from the measurement results (thickness of the first wafer W) at a plurality of points by the sensor, and calculates the TTV data of the first wafer W.
- the above processing apparatus 1 is provided with a control unit 120.
- the control unit 120 is, for example, a computer equipped with a CPU, a memory, or the like, and has a program storage unit (not shown).
- the program storage unit stores a program that controls the processing of the polymerized wafer T in the processing apparatus 1. Further, the program storage unit also stores a program for controlling the operation of the drive system of the above-mentioned various processing units and transfer devices to realize the processing described later in the processing device 1.
- the program may be recorded on a computer-readable storage medium H and may be installed on the control unit 120 from the storage medium H.
- the first wafer W and the second wafer S are bonded to each other in an external bonding device (not shown) of the processing device 1, and a polymerization wafer T is formed in advance.
- a cassette Ct containing a plurality of polymerized wafers T is placed on the cassette mounting table 10 of the loading / unloading station 2.
- the first polymerized wafer T is taken out from the cassette Ct by the transfer fork 23 of the wafer transfer device 22, and is transferred to the alignment unit 50 of the processing station 3.
- the horizontal orientation of the polymerized wafer T is adjusted by adjusting the position of the notch portion (not shown) formed on the first wafer W (step P1 in FIG. 5).
- the polymerized wafer T whose horizontal orientation is adjusted is then conveyed from the alignment unit 50 by the transfer unit 30, and is delivered to the chuck 42 at the delivery position A0 as shown in FIG. 4A. Subsequently, the rotary table 41 is rotated to sequentially move the chuck 42 to the machining positions A1 to A3.
- the back surface Wb of the first wafer W is roughly ground by the rough grinding unit 80 (step P2 in FIG. 5).
- the back surface Wb of the first wafer W is medium-ground by the medium-grinding unit 90 (step P3 in FIG. 5).
- the back surface Wb of the first wafer W is finish-ground by the finish grinding unit 100 (step P4 in FIG. 5).
- the finish grinding unit 100 for example, due to the device characteristics caused by the wear of the finish grinding wheel, the temperature of the grinding unit 40, etc., and the environmental characteristics caused by the atmospheric temperature of the processing device 1, the finish grinding unit 100 and the like.
- the parallelism with the chuck 42 may be deteriorated.
- the processing device 1 is described as described above.
- the parallelism may have changed significantly from the state before standby.
- the thickness of the first wafer W is adjusted.
- the TTV of the first wafer W is improved by not reaching the final finish thickness H and then further regrinding the first wafer W.
- the thickness of the first wafer W after the grinding process in step P4 is measured at a plurality of points by the thickness measuring unit 110 to measure the thickness of the first wafer W.
- the distribution is acquired, and TTV data is calculated from the thickness distribution (step P5 in FIG. 5).
- the calculated TTV data is output to the control unit 120.
- the rotary table 41 is subsequently rotated to sequentially move the chuck 42 to the processing positions A2 and A3.
- the back surface Wb of the first wafer W is reground (medium grinded) by the medium grinding unit 90 (step P6 in FIG. 5).
- the regrinding of the first wafer W in the medium grinding unit 90 is performed under the same conditions as the first medium grinding of the first wafer W in step P3. Specifically, re-grinding is performed by the medium-grinding unit 90 without changing the relative inclination of the medium-grinding unit 90 and the chuck 42.
- the chuck 42 is then based on the TTV data of the first wafer W calculated in step P5, as shown in FIG. 4 (d).
- the relative inclination of the finish grinding unit 100 is adjusted (step P7 in FIG. 5). Specifically, in order to make the in-plane thickness of the first wafer W1 after regrinding in the finish grinding unit 100 uniform, grinding is performed at a position determined to be large in the thickness distribution of the first wafer W. The relative inclination is adjusted so as to increase the amount and decrease the grinding amount at the position where the thickness is judged to be small. That is, the relative inclination of the chuck 42 and the finish grinding unit 100 is adjusted based on the thickness distribution of the first wafer W, whereby the amount of regrinding of the first wafer W by the finish grinding unit 100 is adjusted.
- the back surface Wb of the first wafer W is set to the final finish thickness by the finish grinding unit 100 at the machining position A3 as shown in FIG. 4 (e). Re-grinding (finish grinding) to H (step P8 in FIG. 5).
- the thickness distribution of the first wafer W is acquired before the first wafer W is formed to the final finish thickness in this way, and TTV data is further calculated. Then, based on this, the relative inclination of the finish grinding unit 100 and the chuck 42 is adjusted. Then, since the first wafer W is reground after adjusting the relative inclination in this way, even if the parallelism between the finish grinding unit 100 and the chuck 42 is deteriorated, it is appropriate. Deterioration of TTV of the first wafer W can be suppressed.
- the thickness of the first wafer W after the regrinding process in step P8 is subsequently measured at a plurality of points by the thickness measuring unit 110. Then, the final finish thickness distribution of the first wafer W is acquired, and TTV data is calculated from the final finish thickness distribution (step P9 in FIG. 5). The calculated TTV data is output to the control unit 120.
- the polymerized wafer T for which the TTV data has been calculated is conveyed from the delivery position A0 to the second cleaning unit 70 by the transfer unit 30, and the back surface Sb of the second wafer S is cleaned and held while being held by the transfer pad 32. Is dried (step P10 in FIG. 5).
- Step P11 in FIG. 5 the polymerized wafer T is conveyed from the second cleaning unit 70 to the first cleaning unit 60 by the transfer unit 30, and the back surface Wb of the first wafer W is finished and cleaned using a cleaning liquid nozzle (not shown).
- the polymerized wafer T that has been subjected to all the processing is transferred to the cassette Ct of the cassette mounting table 10 by the transfer fork 23 of the wafer transfer device 22. Then, when the first polymerized wafer T is carried into the cassette Ct, the processing apparatus 1 continuously processes the second and subsequent polymerized wafers T housed in the cassette Ct.
- the second and subsequent sheets (n is a natural number of 2 or more) of the polymerized wafer T are processed by the alignment unit 50, the grinding unit 40, the second cleaning unit 70, and the first cleaning unit 60. It is done sequentially in.
- the acquired first wafer A regrinding process (steps P5 to P8 in FIG. 5) was performed based on the thickness distribution of W.
- the parallelism between the finish grinding unit 100 and the chuck 42 is adjusted by the grinding process of the first polymerized wafer T, so that the first It is not necessary to re-grind the wafer W of the above.
- the regrinding process (steps P5 to P8 in FIG. 5) is not performed on the polymerized wafer T, and the final finish thickness distribution obtained in step P9 in FIG. 5 is applied. Only feedback control is performed based on this.
- the orientation of the nth polymerized wafer T carried out from the cassette Ct is first adjusted in the alignment unit 50 in the horizontal direction (step Q1 in FIG. 7).
- the polymerized wafer T whose horizontal orientation is adjusted is then delivered from the alignment unit 50 to the chuck 42 at the delivery position A0 by the transfer unit 30. Subsequently, the rotary table 41 is rotated to sequentially move the chuck 42 to the machining positions A1 to A3.
- the back surface Wb of the first wafer W is roughly ground by the rough grinding unit 80 (step Q2 in FIG. 7).
- the back surface Wb of the first wafer W is medium-ground by the medium-grinding unit 90 (step Q3 in FIG. 7).
- the chuck 42 and the finish grinding unit 100 are then relative to each other based on the thickness distribution of the first first wafer W acquired in step P9 of FIG.
- the inclination is adjusted (step Q4 in FIG. 7).
- the parallelism between the finish grinding unit 100 and the chuck 42 due to changes in device characteristics (for example, wear of the grinding wheel and device temperature) and environmental characteristics (for example, atmospheric temperature) due to finish grinding of the first laminated wafer T
- the change is adjusted, that is, the result of the finish grinding process of the first laminated wafer T is fed back to the finish grinding process of the nth laminated wafer T.
- the first wafer W is finish grinded to the final finish thickness at the machining position A3 (step Q5 in FIG. 7).
- the polymerized wafer T subjected to the finish grinding process is cleaned by the second cleaning unit 70 after TTV data is calculated from the thickness distribution acquired by the thickness measuring unit 110 (step Q6 in FIG. 7).
- Step Q7) of 7) and cleaning by the first cleaning unit 60 (step Q8 of FIG. 7) are sequentially performed and accommodated in the cassette Ct. Then, when the processing for all the polymerized wafers T housed in the cassette Ct is completed, a series of processing processes in the processing apparatus 1 are completed.
- the relative inclination of the chuck 42 and the finish grinding unit 100 in step Q4 is adjusted by replacing the final finish thickness distribution of the first polymerized wafer T as described above with the mth polymerized wafer T (m). May be performed based on the final finish thickness distribution obtained in step Q6 (natural number of 1 or more and n-1 or less). That is, it may be performed based on the final finish thickness distribution of the polymerized wafer T that has been treated before at least the nth polymerized wafer T.
- the processing of the polymerized wafer T is performed on a single sheet, that is, the processing of the other polymerized wafer T is started after the processing of one polymerized wafer T is completed.
- the processing on the plurality of polymerized wafers T may be continuous, that is, the processing on the plurality of polymerized wafers T may be performed at the same time.
- the grinding unit 40 includes a plurality of chucks 42 (four in the present embodiment) as in the processing apparatus 1 according to the present embodiment
- the plurality of chucks 42 are each provided in the standby state of the processing apparatus 1. It deforms independently and the parallelism deteriorates. Therefore, the adjustment of the relative inclination of the finish grinding unit 100 and the chuck 42 and the regrinding process (steps P5 to P8 in FIG. 5) according to the present embodiment are performed after the processing apparatus 1 returns from the standby state. , It is desirable that this is performed in the processing of the polymerized wafer T held on the first sheet in each of the chucks 42.
- the first wafer W is final.
- the thickness distribution before being formed into the finished thickness is acquired, and the inclination of the chuck 42 is adjusted based on this.
- the parallelism between the finish grinding unit 100 and the chuck 42 deteriorates due to the standby of the processing apparatus 1. Even in this case, the TTV of the first wafer W can be appropriately improved.
- a wafer for tilt adjustment (for example, for example) It is not necessary to grind the dummy wafer), and it is possible to appropriately suppress the waste of the inclination adjusting wafer as in the conventional case.
- the regrinding process is performed by two grinding units, that is, the middle grinding unit 90 and the finish grinding unit 100.
- the first grinding process and the second grinding process (regrinding process) performed by the finish grinding unit 100 at the start of the first grinding process.
- the state of the wafer W of the above changes.
- the first grinding process is performed by the finish grinding unit 100 after the middle grinding process
- the second grinding process is performed by the finish grinding unit 100 after the first finish grinding process.
- the surface grain size of the first wafer W at the start of the second grinding process by the finish grinding unit 100 is smaller than the surface grain size at the start of the first grinding process.
- the surface state of the first wafer W at the start of the grinding process by the finish grinding unit 100 changes in this way, even if the first wafer W is reground as in the present embodiment, the first wafer W is reground. There is a risk that the desired TTV cannot be obtained.
- the first wafer at the time of the first grinding process at the start of the regrinding process by the finish grinding unit 100 since the regrinding process is performed by the intermediate grinding unit 90 and the finish grinding unit 100, the first wafer at the time of the first grinding process at the start of the regrinding process by the finish grinding unit 100.
- the state of W can be suitably reproduced, and thereby the TTV of the first wafer W can be improved more appropriately.
- the inclination of the grinding unit and the chuck 42 is adjusted only by the finish grinding unit 100, not by the medium grinding unit 90.
- the state of the first wafer W at the start of the grinding process by the finish grinding unit 100 can be more preferably reproduced, and the TTV of the first wafer W can be improved more appropriately.
- the grinding unit 40 is composed of three axes, that is, the grinding unit 40 includes three grinding units (coarse grinding unit 80, medium grinding unit 90, and finish grinding unit 100).
- the grinding unit 40 may have two axes, that is, two grinding units (coarse grinding unit 80 and finish grinding unit 100). In such a case, it is desirable that the regrinding process according to the present embodiment is performed in the rough grinding unit 80 and the finish grinding unit 100 based on the thickness distribution of the first wafer W after the first finish grinding.
- the first grinding amount and the second (re-grinding) grinding amount in the grinding unit 40 are made uniform. It has been found that the TTV of the first wafer W can be improved more appropriately. More specifically, for example, when the grinding unit 40 is composed of three axes, the first grinding amount and the second regrinding amount in the middle grinding unit 90, and the first grinding amount in the finish grinding unit 100 By aligning the second re-grinding amount (finish grinding amount), the TTV of the first wafer W can be appropriately improved.
- the present inventors perform a grinding process on the first wafer W having a thickness of 775 ⁇ m so that the thickness after finish grinding is 100 ⁇ m, and the first wafer after finish grinding is performed.
- the in-plane thickness distribution of the wafer W was measured. Further, as shown in FIG. 8, in Comparative Examples and Examples 1 to 3, the grinding amount in each grinding unit was changed.
- the present inventors first perform a first grinding process of 635 ⁇ m in the grinding unit before finishing in the grinding process of the first round in the grinding unit 40, and finish the process.
- a second grinding process of 20 ⁇ m was performed in the grinding unit 100.
- the re-grinding process of the second lap only the second re-grinding process of 20 ⁇ m was performed in the finish grinding unit 100.
- the TTV calculated from the final finish thickness distribution of the first wafer W is the conventional regrinding process. It was not improved properly compared to the case without.
- Example 1 of FIG. 8B the present inventors performed a first grinding process of 605 ⁇ m in the grinding unit before finishing in the grinding process of the first round in the grinding unit 40.
- a second grinding process of 20 ⁇ m was performed in the finish grinding unit 100.
- the first re-grinding process of 30 ⁇ m is performed in the unfinished grinding unit that has undergone the first grinding process, and the second re-grinding process of 20 ⁇ m is performed in the finish grinding unit 100.
- the first wafer W is reground in the grinding unit before finishing in addition to the finishing grinding unit 100, it is compared with the comparative example shown in FIG. 8A. Therefore, the TTV calculated from the final finish thickness distribution of the first wafer W has been improved.
- Example 2 of FIG. 8C the present inventors performed a first grinding process of 317.5 ⁇ m in the grinding unit before finishing in the first round grinding process in the grinding unit 40. Then, the finish grinding unit 100 performed a second grinding process of 20 ⁇ m. Further, in the re-grinding process of the second lap, the first re-grinding process of 317.5 ⁇ m was performed in the unfinished grinding unit that had undergone the first grinding process, and the second re-grinding of 20 ⁇ m was performed in the finish grinding unit 100. Processing was performed. As shown in FIG. 8C, when the first and second grinding amounts of the pre-finishing grinding unit and the finishing grinding unit 100 are aligned, it is calculated from the final finishing thickness distribution of the first wafer W. TTV was improved as compared with Example 1.
- Example 3 of FIG. 8D the present inventors further grind the grinding unit 40 in the first round of grinding, and in the rough grinding unit 80, the rough grinding of 575 ⁇ m, and in the medium grinding unit 90.
- Medium grinding as the first grinding of 30 ⁇ m and finish grinding as the second grinding of 20 ⁇ m were performed in the finish grinding unit 100.
- the medium-grinding unit 90 performed the medium-grinding as the first re-grinding of 30 ⁇ m
- the finish-grinding unit 100 performed the finish-grinding as the second re-grinding of 20 ⁇ m.
- the final finish thickness distribution of the first wafer W is obtained by aligning the first and second grinding amounts of the medium grinding unit 90 and the finishing grinding unit 100 of the grinding unit 40, respectively.
- the TTV calculated from is further improved as compared with Example 2.
- the TTV of the first wafer W can be improved more appropriately by aligning the first grinding amount and the second (re-grinding) grinding amount in the grinding unit 40. Can be done.
- the TTV of the first wafer W after the finish grinding process in Example 3 was further improved as compared with the TTV of the first wafer W after the finish grinding process in Example 2.
- the amount of grinding in the "first regrinding" and “second regrinding" of the first wafer W to be ground on the chuck 42 is the nth grinding process. It is preferable that the amount of grinding is the same as that in the "first grinding” as the pre-finishing grinding process and the "second grinding” as the finishing grinding process of the first wafer W to be subjected to.
- the nth first wafer W is not reground as described above, and the coarseness is, for example, 625 ⁇ m. Grinding, 30 ⁇ m medium grinding, and 20 ⁇ m finish grinding are performed in sequence.
- the medium grinding and the finish grinding correspond to the "first grinding” and the "second grinding", respectively.
- the grinding amounts of the "first regrinding" and the “second regrinding” for the first wafer W of the first wafer are referred to as the "medium grinding amount” and the “finishing grinding amount” of the nth wafer, respectively.
- the grinding amount of the first wafer W by each grinding unit is determined by the following method. That is, first, the "first regrinding" and the “first regrinding” in the second lap regrinding process of the first first wafer W are aligned with the actual grinding amount of the nth first wafer W. 2 Regrinding ”determines the grinding amount. Next, the grinding amounts of the "first grinding” and the “second grinding” in the grinding process of the first lap are determined in accordance with the grinding amount in the regrinding process of the second lap. Finally, the difference from the desired grinding amount in the grinding unit 40 is determined as the grinding amount by rough grinding.
- the regrinding process is performed only on the first polymerized wafer T held by the chuck 42, but the regrinding process is also performed on the nth polymerized wafer T in the same manner. It may be done.
- the TTV of the nth polymerized wafer T can be further improved.
- the inclination of the chuck 42 has already been adjusted, and the parallelism between the finish grinding unit 100 and the chuck 42 due to the finish grinding of the polymerized wafer T has changed. Is sufficiently small as compared with the change in parallelism in the standby state of the processing apparatus 1.
- the processing of the nth polymerized wafer T is not reground, and the TTV is appropriately deteriorated only by feeding back the finish grinding result of the mth polymerized wafer T. Can be suppressed. Further, the grinding processing time in the processing apparatus 1 can be shortened as compared with the case where the regrinding process is performed on all the polymerized wafers T.
- the relative inclination of the finish grinding unit 100 and the chuck 42 is adjusted by inclining the chuck base 43 by the inclination adjusting unit 44, but for example, by inclining the finish grinding unit 100, the relative inclination is adjusted. Tilt may be adjusted. Further, for example, if the finish grinding amount of the first wafer W can be adjusted, the inclination adjusting unit 44 may not be used.
- the case where the first wafer W is ground and thinned in the polymerized wafer T in which the first wafer W and the second wafer S are joined in the processing apparatus 1 will be described as an example.
- the thinned first wafer W does not have to be bonded to the second wafer S.
- Processing equipment 40 Grinding unit 80 Rough grinding unit 90 Medium grinding unit 100 Finishing grinding unit 120 Control unit W 1st wafer
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Abstract
Description
40 研削ユニット
80 粗研削ユニット
90 中研削ユニット
100 仕上研削ユニット
120 制御部
W 第1のウェハ
Claims (14)
- 加工装置における基板の加工方法であって、
第1の研削部において前記基板に第1の研削処理を施すことと、
第2の研削部において前記基板に第2の研削処理を施すことと、
前記第1の研削部において前記基板に第1の再研削処理を施すことと、
前記第2の研削部において前記基板に第2の再研削処理を施すことと、を含み、
前記基板は、前記第2の再研削処理において最終仕上厚みに仕上研削される、加工方法。 - 前記第2の研削処理が施された後の前記基板の厚み分布を測定することと、
測定された前記厚み分布に基づいて、前記基板を保持する基板保持部と前記第2の研削部との相対的な傾きを決定することを含み、
前記第1の研削部は、前記基板保持部と前記第1の研削部との相対的な傾きを変えずに、前記第1の研削処理、及び、前記第1の再研削処理を行い、
前記第2の研削部は、前記基板が、前記厚み分布に基づいて決定された前記基板保持部と前記第2の研削部との相対的な傾きで保持された状態で、前記第2の再研削処理を行う、請求項1に記載の加工方法。 - 前記第1の研削処理における前記基板の研削量と前記第1の再研削処理における前記基板の研削量が同じであり、
前記第2の研削処理における前記基板の研削量と前記第2の再研削処理における前記基板の研削量が同じである、請求項1または2に記載の加工方法。 - 前記第1の研削処理に先立ち、前記基板の厚みを減少させるための粗研削を施すことを含む、請求項1~3のいずれか一項に記載の加工方法。
- 前記粗研削における前記基板の研削量は、前記第1の研削処理及び前記第2の研削処理における前記基板の研削量よりも多い、請求項4に記載の加工方法。
- 前記加工装置においては複数の基板が連続的に処理され、
基板の最終仕上厚み分布を測定することを含み、
基板保持部に保持される1枚目の基板に対しては、請求項1~5のいずれか一項に記載の加工方法により再研削処理を行い、
基板保持部に保持されるn枚目(nは2以上の自然数)の基板に対しては、前記再研削処理を行わず、m枚目(mは1以上、n‐1以下の自然数)の基板において測定された前記最終仕上厚み分布に基づいて、
前記第1の研削部における仕上前研削処理と、
前記第2の研削部における仕上研削処理と、が施されて最終仕上厚みに仕上研削される、加工方法。 - 前記第1の再研削処理における前記基板の研削量と前記仕上前研削処理における前記基板の研削量が同じであり、
前記第2の再研削処理における前記基板の研削量と前記仕上研削処理における前記基板の研削量が同じである、請求項6に記載の加工方法。 - 基板の研削処理を行う加工装置であって、
前記基板に第1の研削処理を施す第1の研削部と、
前記基板に第2の研削処理を施す第2の研削部と、
前記基板の研削処理を制御する制御部と、を備え、
前記制御部は、
前記第1の研削部において前記基板に第1の再研削処理を施し、
前記第2の研削部において前記基板を第2の再研削処理を施すように、前記第1の研削部及び前記第2の研削部の動作を制御し、
前記第2の再研削処理において前記基板を最終仕上厚みに仕上研削する、加工装置。 - 前記基板を保持する基板保持部と、
前記第2の研削処理が施された後の前記基板の厚み分布を測定する厚み分布測定部と、
前記基板保持部と前記第2の研削部との相対的な傾きを調整する傾き調整部と、を備え、
前記制御部は、
測定された前記厚み分布に基づいて前記傾きを決定し、
前記基板保持部と前記第1の研削部との相対的な傾きを変えずに、前記第1の研削処理、及び、前記第1の再研削処理を行い、
前記基板が前記厚み分布に基づいて決定された前記基板保持部と前記第2の研削部との相対的な傾きで保持された状態で、前記第2の再研削処理を行うように、前記第1の研削部及び前記第2の研削部の動作を制御する、請求項8に記載の加工装置。 - 前記制御部は、
前記第1の研削処理における前記基板の研削量と前記第1の再研削処理における前記基板の研削量が同じとなり、
前記第2の研削処理における前記基板の研削量と前記第2の再研削処理における前記基板の研削量が同じとなるように、前記第1の研削部及び前記第2の研削部の動作を制御する、請求項9に記載の加工装置。 - 前記基板の厚みを減少させるための粗研削処理部を備える、請求項8~10のいずれか一項に記載の加工装置。
- 前記制御部は、前記粗研削処理部における前記基板の研削量が、前記第1の研削処理及び前記第2の研削処理における前記基板の研削量よりも多くなるように、前記粗研削処理部の動作を制御する、請求項11に記載の加工装置。
- 加工装置においては複数の基板が連続的に処理され、
前記制御部は、
基板の最終仕上厚み分布を測定するように前記厚み分布測定部の動作を制御するとともに、
基板保持部に保持される1枚目の基板に対しては、前記第1の研削部及び前記第2の研削部による前記基板の再研削処理を行い、
基板保持部に保持されるn枚目(nは2以上の自然数)の基板に対しては、前記再研削処理を行わず、m枚目(mは1以上、n‐1以下の自然数)の基板において測定された前記最終仕上厚み分布に基づいて、
前記第1の研削部における仕上前研削処理と、
前記第2の研削部における仕上研削処理と、を施し、前記基板を最終仕上厚みに仕上研削するように、前記第1の研削部及び前記第2の研削部の動作を制御する、請求項9~12のいずれか一項に記載の加工装置。 - 前記制御部は、
前記第1の再研削処理における前記基板の研削量と前記仕上前研削処理における前記基板の研削量が同じとなり、
前記第2の再研削処理における前記基板の研削量と前記仕上研削処理における前記基板の研削量が同じとなるように、前記前記第1の研削部及び前記第2の研削部の動作を制御する、請求項13に記載の加工装置。
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