JP7466622B2 - 加工方法及び加工装置 - Google Patents

加工方法及び加工装置 Download PDF

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Publication number
JP7466622B2
JP7466622B2 JP2022501784A JP2022501784A JP7466622B2 JP 7466622 B2 JP7466622 B2 JP 7466622B2 JP 2022501784 A JP2022501784 A JP 2022501784A JP 2022501784 A JP2022501784 A JP 2022501784A JP 7466622 B2 JP7466622 B2 JP 7466622B2
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Japan
Prior art keywords
grinding
substrate
unit
wafer
finish
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Application number
JP2022501784A
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English (en)
Japanese (ja)
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JPWO2021166668A1 (https=
JPWO2021166668A5 (https=
Inventor
貴志 坂上
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Tokyo Electron Ltd
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Tokyo Electron Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Publication date
Application filed by Tokyo Electron Ltd filed Critical Tokyo Electron Ltd
Publication of JPWO2021166668A1 publication Critical patent/JPWO2021166668A1/ja
Publication of JPWO2021166668A5 publication Critical patent/JPWO2021166668A5/ja
Priority to JP2024059487A priority Critical patent/JP7657353B2/ja
Application granted granted Critical
Publication of JP7466622B2 publication Critical patent/JP7466622B2/ja
Priority to JP2025050228A priority patent/JP2025089474A/ja
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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B1/00—Processes of grinding or polishing; Use of auxiliary equipment in connection with such processes
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B49/00—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation
    • B24B49/02—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation according to the instantaneous size and required size of the workpiece acted upon, the measuring or gauging being continuous or intermittent
    • B24B49/04—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation according to the instantaneous size and required size of the workpiece acted upon, the measuring or gauging being continuous or intermittent involving measurement of the workpiece at the place of grinding during grinding operation
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B49/00—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation
    • B24B49/02—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation according to the instantaneous size and required size of the workpiece acted upon, the measuring or gauging being continuous or intermittent
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B51/00—Arrangements for automatic control of a series of individual steps in grinding a workpiece
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B7/00—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B7/00—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor
    • B24B7/20—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor characterised by a special design with respect to properties of the material of non-metallic articles to be ground
    • B24B7/22—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor characterised by a special design with respect to properties of the material of non-metallic articles to be ground for grinding inorganic material, e.g. stone, ceramics, porcelain
    • B24B7/228—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor characterised by a special design with respect to properties of the material of non-metallic articles to be ground for grinding inorganic material, e.g. stone, ceramics, porcelain for grinding thin, brittle parts, e.g. semiconductors, wafers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0428—Apparatus for mechanical treatment or grinding or cutting
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0451—Apparatus for manufacturing or treating in a plurality of work-stations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0451—Apparatus for manufacturing or treating in a plurality of work-stations
    • H10P72/0452—Apparatus for manufacturing or treating in a plurality of work-stations characterised by the layout of the process chambers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0451—Apparatus for manufacturing or treating in a plurality of work-stations
    • H10P72/0461—Apparatus for manufacturing or treating in a plurality of work-stations characterised by the presence of two or more transfer chambers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/76—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches
    • H10P72/7604—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support
    • H10P72/7612—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support characterised by lifting arrangements, e.g. lift pins
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/76—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches
    • H10P72/7604—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support
    • H10P72/7621—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support characterised by supporting two or more semiconductor substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/76—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches
    • H10P72/7604—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support
    • H10P72/7624—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support characterised by the mechanical construction of the susceptor, stage or support
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/76—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches
    • H10P72/7604—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support
    • H10P72/7626—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support characterised by the construction of the shaft
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • H10P74/20—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by the properties tested or measured, e.g. structural or electrical properties
    • H10P74/203—Structural properties, e.g. testing or measuring thicknesses, line widths, warpage, bond strengths or physical defects

Landscapes

  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Ceramic Engineering (AREA)
  • Inorganic Chemistry (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Grinding Of Cylindrical And Plane Surfaces (AREA)
  • Constituent Portions Of Griding Lathes, Driving, Sensing And Control (AREA)
JP2022501784A 2020-02-17 2021-02-04 加工方法及び加工装置 Active JP7466622B2 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2024059487A JP7657353B2 (ja) 2020-02-17 2024-04-02 加工方法及び加工装置
JP2025050228A JP2025089474A (ja) 2020-02-17 2025-03-25 加工方法及び加工装置

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2020024474 2020-02-17
JP2020024474 2020-02-17
PCT/JP2021/004173 WO2021166668A1 (ja) 2020-02-17 2021-02-04 加工方法及び加工装置

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2024059487A Division JP7657353B2 (ja) 2020-02-17 2024-04-02 加工方法及び加工装置

Publications (3)

Publication Number Publication Date
JPWO2021166668A1 JPWO2021166668A1 (https=) 2021-08-26
JPWO2021166668A5 JPWO2021166668A5 (https=) 2022-10-14
JP7466622B2 true JP7466622B2 (ja) 2024-04-12

Family

ID=77391952

Family Applications (3)

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JP2022501784A Active JP7466622B2 (ja) 2020-02-17 2021-02-04 加工方法及び加工装置
JP2024059487A Active JP7657353B2 (ja) 2020-02-17 2024-04-02 加工方法及び加工装置
JP2025050228A Pending JP2025089474A (ja) 2020-02-17 2025-03-25 加工方法及び加工装置

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Application Number Title Priority Date Filing Date
JP2024059487A Active JP7657353B2 (ja) 2020-02-17 2024-04-02 加工方法及び加工装置
JP2025050228A Pending JP2025089474A (ja) 2020-02-17 2025-03-25 加工方法及び加工装置

Country Status (6)

Country Link
US (1) US12528153B2 (https=)
JP (3) JP7466622B2 (https=)
KR (2) KR20250090358A (https=)
CN (2) CN118322002A (https=)
TW (1) TWI888481B (https=)
WO (1) WO2021166668A1 (https=)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI898454B (zh) * 2024-02-29 2025-09-21 東台精機股份有限公司 晶圓研磨裝置及晶圓研磨方法

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001237202A (ja) 2000-12-25 2001-08-31 Nec Corp 半導体装置の製造方法
JP2005313297A (ja) 2004-04-30 2005-11-10 Tdk Corp 焼結薄板の製造方法
JP2015008247A (ja) 2013-06-26 2015-01-15 株式会社Sumco 半導体ウェーハの加工プロセス
JP2015039739A (ja) 2013-08-22 2015-03-02 株式会社ディスコ 研削方法
WO2019124032A1 (ja) 2017-12-22 2019-06-27 東京エレクトロン株式会社 基板処理システム、基板処理方法及びコンピュータ記憶媒体
WO2020012951A1 (ja) 2018-07-09 2020-01-16 東京エレクトロン株式会社 加工装置、加工方法及びコンピュータ記憶媒体

Family Cites Families (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3037857B2 (ja) 1993-10-28 2000-05-08 新日本製鐵株式会社 ベルト研削方法およびベルト研削装置
JP3795947B2 (ja) * 1995-12-27 2006-07-12 コマツ電子金属株式会社 半導体ウェハの研磨方法
JPH11309653A (ja) 1998-04-27 1999-11-09 Tokyo Seimitsu Co Ltd ウェーハの平面加工装置
JP3768069B2 (ja) * 2000-05-16 2006-04-19 信越半導体株式会社 半導体ウエーハの薄型化方法
JP2006021264A (ja) * 2004-07-07 2006-01-26 Disco Abrasive Syst Ltd 研削装置
JP5276823B2 (ja) 2007-10-04 2013-08-28 株式会社ディスコ ウェーハの研削加工装置
JP2010194680A (ja) * 2009-02-25 2010-09-09 Disco Abrasive Syst Ltd ワーク加工方法およびワーク加工装置
JP5788304B2 (ja) 2011-12-06 2015-09-30 株式会社ディスコ 研削装置
JP2015160260A (ja) * 2014-02-26 2015-09-07 株式会社東芝 研削装置及び研削方法
JP6377433B2 (ja) * 2014-07-04 2018-08-22 株式会社ディスコ 研削方法
JP6377459B2 (ja) * 2014-08-29 2018-08-22 株式会社ディスコ ウエーハ検査方法、研削研磨装置
JP6676284B2 (ja) * 2015-04-08 2020-04-08 株式会社東京精密 ワーク加工装置
US9656370B2 (en) * 2015-10-06 2017-05-23 Disco Corporation Grinding method
CN106563980B (zh) 2015-10-12 2020-04-10 株式会社迪思科 磨削方法
JP6802012B2 (ja) * 2016-09-02 2020-12-16 株式会社ディスコ 計測装置
JP6752367B2 (ja) * 2017-06-21 2020-09-09 東京エレクトロン株式会社 基板処理システム、基板処理方法及びコンピュータ記憶媒体
JP6917233B2 (ja) * 2017-07-25 2021-08-11 株式会社ディスコ ウエーハの加工方法
JP7046573B2 (ja) * 2017-11-27 2022-04-04 株式会社ディスコ 被加工物の加工方法
JP7049848B2 (ja) * 2018-02-08 2022-04-07 株式会社ディスコ 保持面の研削方法

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001237202A (ja) 2000-12-25 2001-08-31 Nec Corp 半導体装置の製造方法
JP2005313297A (ja) 2004-04-30 2005-11-10 Tdk Corp 焼結薄板の製造方法
JP2015008247A (ja) 2013-06-26 2015-01-15 株式会社Sumco 半導体ウェーハの加工プロセス
JP2015039739A (ja) 2013-08-22 2015-03-02 株式会社ディスコ 研削方法
WO2019124032A1 (ja) 2017-12-22 2019-06-27 東京エレクトロン株式会社 基板処理システム、基板処理方法及びコンピュータ記憶媒体
WO2020012951A1 (ja) 2018-07-09 2020-01-16 東京エレクトロン株式会社 加工装置、加工方法及びコンピュータ記憶媒体

Also Published As

Publication number Publication date
KR20220137114A (ko) 2022-10-11
KR102817756B1 (ko) 2025-06-09
TWI888481B (zh) 2025-07-01
CN115066314A (zh) 2022-09-16
US20230060918A1 (en) 2023-03-02
TW202536952A (zh) 2025-09-16
KR20250090358A (ko) 2025-06-19
US12528153B2 (en) 2026-01-20
CN115066314B (zh) 2024-05-28
JP7657353B2 (ja) 2025-04-04
JP2025089474A (ja) 2025-06-12
JPWO2021166668A1 (https=) 2021-08-26
TW202137317A (zh) 2021-10-01
JP2024091657A (ja) 2024-07-05
WO2021166668A1 (ja) 2021-08-26
TW202536953A (zh) 2025-09-16
CN118322002A (zh) 2024-07-12

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