TWI856983B - 三維積體電路及其形成方法 - Google Patents

三維積體電路及其形成方法 Download PDF

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Publication number
TWI856983B
TWI856983B TW108139025A TW108139025A TWI856983B TW I856983 B TWI856983 B TW I856983B TW 108139025 A TW108139025 A TW 108139025A TW 108139025 A TW108139025 A TW 108139025A TW I856983 B TWI856983 B TW I856983B
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Taiwan
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layer
semiconductor element
substrate
wiring
element layer
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TW108139025A
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English (en)
Chinese (zh)
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TW202034494A (zh
Inventor
拉爾斯 利布曼
傑佛瑞 史密斯
安東 Ｊ 德維利耶
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日商東京威力科創股份有限公司
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D88/00—Three-dimensional [3D] integrated devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B10/00—Static random access memory [SRAM] devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B10/00—Static random access memory [SRAM] devices
    • H10B10/12—Static random access memory [SRAM] devices comprising a MOSFET load element
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B10/00—Static random access memory [SRAM] devices
    • H10B10/18—Peripheral circuit regions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B69/00—Erasable-and-programmable ROM [EPROM] devices not provided for in groups H10B41/00 - H10B63/00, e.g. ultraviolet erasable-and-programmable ROM [UVEPROM] devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/0123—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs
    • H10D84/0126—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs
    • H10D84/0149—Manufacturing their interconnections or electrodes, e.g. source or drain electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/0123—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs
    • H10D84/0126—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs
    • H10D84/0165—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs the components including complementary IGFETs, e.g. CMOS devices
    • H10D84/0186—Manufacturing their interconnections or electrodes, e.g. source or drain electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/02—Manufacture or treatment characterised by using material-based technologies
    • H10D84/03—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology
    • H10D84/038—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology using silicon technology, e.g. SiGe
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/82—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components
    • H10D84/83—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET]
    • H10D84/85—Complementary IGFETs, e.g. CMOS
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D88/00—Three-dimensional [3D] integrated devices
    • H10D88/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/20—Interconnections within wafers or substrates, e.g. through-silicon vias [TSV]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/40—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
    • H10W20/41—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes characterised by their conductive parts
    • H10W20/42—Vias, e.g. via plugs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/40—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
    • H10W20/41—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes characterised by their conductive parts
    • H10W20/427—Power or ground buses

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  • Design And Manufacture Of Integrated Circuits (AREA)
  • Semiconductor Memories (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
TW108139025A 2018-10-29 2019-10-29 三維積體電路及其形成方法 TWI856983B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US201862752112P 2018-10-29 2018-10-29
US62/752,112 2018-10-29

Publications (2)

Publication Number Publication Date
TW202034494A TW202034494A (zh) 2020-09-16
TWI856983B true TWI856983B (zh) 2024-10-01

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TW108139025A TWI856983B (zh) 2018-10-29 2019-10-29 三維積體電路及其形成方法

Country Status (6)

Country Link
US (2) US11201148B2 (https=)
JP (1) JP7426547B2 (https=)
KR (1) KR102672379B1 (https=)
CN (1) CN112956024B (https=)
TW (1) TWI856983B (https=)
WO (1) WO2020092361A1 (https=)

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US11646318B2 (en) * 2020-09-30 2023-05-09 Tokyo Electron Limited Connections from buried interconnects to device terminals in multiple stacked devices structures
US11322197B1 (en) * 2020-10-21 2022-05-03 Arm Limited Power-gating techniques with buried metal
US11948886B2 (en) 2020-10-23 2024-04-02 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor device and methods of manufacturing same
US12176293B2 (en) * 2020-12-04 2024-12-24 Tokyo Electron Limited Inter-tier power delivery network (PDN) for dense gate-on-gate 3D logic integration
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US12183738B2 (en) * 2021-01-29 2024-12-31 Samsung Electronics Co., Ltd. Cross-coupled gate design for stacked device with separated top-down gate
US12446291B2 (en) * 2021-02-19 2025-10-14 Tokyo Electron Limited Inverted top-tier FET for multi-tier gate-on-gate 3-dimension integration (3Di)
US11968818B2 (en) 2021-03-19 2024-04-23 Samsung Electronics Co., Ltd. SRAM memory cell for stacked transistors with different channel width
US11670363B2 (en) * 2021-04-23 2023-06-06 Arm Limited Multi-tier memory architecture
US12557377B2 (en) * 2021-05-13 2026-02-17 Tokyo Electron Limited Inverted cross-couple for top-tier FET for multi-tier gate-on-gate 3DI
US11764154B2 (en) 2021-07-30 2023-09-19 Taiwan Semiconductor Manufacturing Company, Ltd. Power rail and signal line arrangement in integrated circuits having stacked transistors
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US12588489B2 (en) 2022-02-25 2026-03-24 Samsung Electronics Co., Ltd. Integrated circuit devices including stacked elements and methods of forming the same
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Also Published As

Publication number Publication date
JP2022509506A (ja) 2022-01-20
WO2020092361A1 (en) 2020-05-07
CN112956024B (zh) 2024-09-10
JP7426547B2 (ja) 2024-02-02
US20200135718A1 (en) 2020-04-30
US11201148B2 (en) 2021-12-14
TW202034494A (zh) 2020-09-16
KR20210068572A (ko) 2021-06-09
US20220052038A1 (en) 2022-02-17
CN112956024A (zh) 2021-06-11
KR102672379B1 (ko) 2024-06-04

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