TWI831391B - 表面處理裝置 - Google Patents
表面處理裝置 Download PDFInfo
- Publication number
- TWI831391B TWI831391B TW111136459A TW111136459A TWI831391B TW I831391 B TWI831391 B TW I831391B TW 111136459 A TW111136459 A TW 111136459A TW 111136459 A TW111136459 A TW 111136459A TW I831391 B TWI831391 B TW I831391B
- Authority
- TW
- Taiwan
- Prior art keywords
- surface treatment
- storage unit
- processed
- chamber
- treatment device
- Prior art date
Links
- 238000004381 surface treatment Methods 0.000 title claims abstract description 220
- 239000000463 material Substances 0.000 claims abstract description 194
- 238000004544 sputter deposition Methods 0.000 claims abstract description 68
- 238000009832 plasma treatment Methods 0.000 claims abstract description 32
- 230000001678 irradiating effect Effects 0.000 claims description 3
- 238000012545 processing Methods 0.000 abstract description 25
- 239000007789 gas Substances 0.000 description 73
- 239000010408 film Substances 0.000 description 46
- 239000004020 conductor Substances 0.000 description 35
- 230000015572 biosynthetic process Effects 0.000 description 26
- 239000000498 cooling water Substances 0.000 description 24
- 238000001816 cooling Methods 0.000 description 18
- 238000009434 installation Methods 0.000 description 14
- 239000012495 reaction gas Substances 0.000 description 14
- 238000010586 diagram Methods 0.000 description 10
- 238000000034 method Methods 0.000 description 10
- 230000007246 mechanism Effects 0.000 description 9
- 230000032258 transport Effects 0.000 description 9
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 6
- 230000008569 process Effects 0.000 description 6
- 239000012530 fluid Substances 0.000 description 5
- 125000006850 spacer group Chemical group 0.000 description 5
- 239000011810 insulating material Substances 0.000 description 4
- 230000004048 modification Effects 0.000 description 4
- 238000012986 modification Methods 0.000 description 4
- 239000010409 thin film Substances 0.000 description 4
- VXUYXOFXAQZZMF-UHFFFAOYSA-N titanium(IV) isopropoxide Chemical compound CC(C)O[Ti](OC(C)C)(OC(C)C)OC(C)C VXUYXOFXAQZZMF-UHFFFAOYSA-N 0.000 description 4
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- 229910052786 argon Inorganic materials 0.000 description 3
- 238000011109 contamination Methods 0.000 description 3
- 238000002294 plasma sputter deposition Methods 0.000 description 3
- 230000001105 regulatory effect Effects 0.000 description 3
- 238000011282 treatment Methods 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- KAKZBPTYRLMSJV-UHFFFAOYSA-N Butadiene Chemical compound C=CC=C KAKZBPTYRLMSJV-UHFFFAOYSA-N 0.000 description 2
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 description 2
- AZDRQVAHHNSJOQ-UHFFFAOYSA-N alumane Chemical group [AlH3] AZDRQVAHHNSJOQ-UHFFFAOYSA-N 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- UQEAIHBTYFGYIE-UHFFFAOYSA-N hexamethyldisiloxane Chemical compound C[Si](C)(C)O[Si](C)(C)C UQEAIHBTYFGYIE-UHFFFAOYSA-N 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 239000011159 matrix material Substances 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 description 2
- 230000000149 penetrating effect Effects 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 238000012546 transfer Methods 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- HSFWRNGVRCDJHI-UHFFFAOYSA-N alpha-acetylene Natural products C#C HSFWRNGVRCDJHI-UHFFFAOYSA-N 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 125000002534 ethynyl group Chemical group [H]C#C* 0.000 description 1
- -1 for example Substances 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- FFUAGWLWBBFQJT-UHFFFAOYSA-N hexamethyldisilazane Chemical compound C[Si](C)(C)N[Si](C)(C)C FFUAGWLWBBFQJT-UHFFFAOYSA-N 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 239000012774 insulation material Substances 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 238000005192 partition Methods 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 239000000088 plastic resin Substances 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 239000002243 precursor Substances 0.000 description 1
- 230000003014 reinforcing effect Effects 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- CZDYPVPMEAXLPK-UHFFFAOYSA-N tetramethylsilane Chemical compound C[Si](C)(C)C CZDYPVPMEAXLPK-UHFFFAOYSA-N 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/02—Pretreatment of the material to be coated
- C23C14/021—Cleaning or etching treatments
- C23C14/022—Cleaning or etching treatments by means of bombardment with energetic particles or radiation
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/50—Substrate holders
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
- C23C14/564—Means for minimising impurities in the coating chamber such as dust, moisture, residual gases
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
- C23C14/564—Means for minimising impurities in the coating chamber such as dust, moisture, residual gases
- C23C14/566—Means for minimising impurities in the coating chamber such as dust, moisture, residual gases using a load-lock chamber
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
- C23C14/568—Transferring the substrates through a series of coating stations
Landscapes
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physical Vapour Deposition (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2021-158047 | 2021-09-28 | ||
| JP2021158047 | 2021-09-28 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW202321488A TW202321488A (zh) | 2023-06-01 |
| TWI831391B true TWI831391B (zh) | 2024-02-01 |
Family
ID=85782513
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW111136459A TWI831391B (zh) | 2021-09-28 | 2022-09-27 | 表面處理裝置 |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US20240318303A1 (https=) |
| JP (1) | JPWO2023054044A1 (https=) |
| KR (1) | KR20240039073A (https=) |
| CN (1) | CN117836463A (https=) |
| TW (1) | TWI831391B (https=) |
| WO (1) | WO2023054044A1 (https=) |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS60238134A (ja) * | 1984-04-16 | 1985-11-27 | Tokuda Seisakusho Ltd | 真空処理装置 |
| JPH02115562U (https=) * | 1989-02-27 | 1990-09-17 | ||
| TW201021626A (en) * | 2008-09-30 | 2010-06-01 | Sekisui Chemical Co Ltd | Surface processing apparatus |
| TW201611172A (zh) * | 2014-07-31 | 2016-03-16 | 愛發科股份有限公司 | 基板處理裝置 |
Family Cites Families (22)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4500407A (en) * | 1983-07-19 | 1985-02-19 | Varian Associates, Inc. | Disk or wafer handling and coating system |
| US4534314A (en) * | 1984-05-10 | 1985-08-13 | Varian Associates, Inc. | Load lock pumping mechanism |
| US4851095A (en) * | 1988-02-08 | 1989-07-25 | Optical Coating Laboratory, Inc. | Magnetron sputtering apparatus and process |
| EP0716160B1 (en) * | 1989-11-13 | 2000-01-26 | Optical Coating Laboratory, Inc. | Geometries and configurations for magnetron sputtering apparatus |
| JP2001043530A (ja) * | 1999-07-28 | 2001-02-16 | Anelva Corp | 情報記録ディスク用保護膜作成方法及び情報記録ディスク用薄膜作成装置 |
| KR101206959B1 (ko) * | 2006-11-29 | 2012-11-30 | 도쿄엘렉트론가부시키가이샤 | 기판의 처리 장치 |
| GB0819474D0 (en) * | 2008-10-23 | 2008-12-03 | P2I Ltd | Plasma processing apparatus |
| US20110132755A1 (en) * | 2009-12-04 | 2011-06-09 | Kim Woosam | In-line system for manufacturing solar cell |
| JP4761326B2 (ja) * | 2010-01-15 | 2011-08-31 | シャープ株式会社 | 薄膜形成装置システムおよび薄膜形成方法 |
| JP5602005B2 (ja) * | 2010-12-22 | 2014-10-08 | キヤノンアネルバ株式会社 | 真空処理装置、及び、それを用いた処理方法 |
| KR20140116120A (ko) * | 2012-01-03 | 2014-10-01 | 어플라이드 머티어리얼스, 인코포레이티드 | 결정질 실리콘 태양 전지들을 패시베이팅하기 위한 진보된 플랫폼 |
| JP5999190B2 (ja) * | 2012-10-01 | 2016-09-28 | 日産自動車株式会社 | インライン式コーティング装置、インライン式コーティング方法、およびセパレータ |
| JP6026263B2 (ja) * | 2012-12-20 | 2016-11-16 | キヤノンアネルバ株式会社 | プラズマｃｖｄ装置、真空処理装置 |
| JP2015098617A (ja) | 2013-11-18 | 2015-05-28 | 株式会社島津製作所 | 成膜装置 |
| WO2015087505A1 (ja) * | 2013-12-12 | 2015-06-18 | 株式会社アルバック | インライン式成膜装置の成膜準備方法及びインライン式成膜装置並びにキャリア |
| JP6231399B2 (ja) * | 2014-02-17 | 2017-11-15 | キヤノンアネルバ株式会社 | 処理装置 |
| WO2016208094A1 (ja) * | 2015-06-24 | 2016-12-29 | キヤノンアネルバ株式会社 | 真空アーク成膜装置および成膜方法 |
| DE102015013799A1 (de) * | 2015-10-26 | 2017-04-27 | Grenzebach Maschinenbau Gmbh | Vorrichtung und Verfahren zum Beschichten überlanger flächenhafter Substrate, insbesondere Glasscheiben, in einer Vakuum-Beschichtungsanlage |
| JP6240695B2 (ja) * | 2016-03-02 | 2017-11-29 | 株式会社日立国際電気 | 基板処理装置、半導体装置の製造方法及びプログラム |
| JP2018148051A (ja) * | 2017-03-06 | 2018-09-20 | 株式会社半導体エネルギー研究所 | 成膜装置、成膜方法、及び半導体装置の作製方法 |
| EA034967B1 (ru) * | 2018-05-04 | 2020-04-13 | Общество С Ограниченной Ответственностью "Изовак Технологии" | Технологическая линия для формирования тонкопленочных покрытий в вакууме (варианты) |
| JP7159238B2 (ja) * | 2020-03-13 | 2022-10-24 | キヤノントッキ株式会社 | 基板キャリア、成膜装置、及び成膜方法 |
-
2022
- 2022-09-20 JP JP2023551334A patent/JPWO2023054044A1/ja active Pending
- 2022-09-20 KR KR1020247008753A patent/KR20240039073A/ko active Pending
- 2022-09-20 US US18/580,544 patent/US20240318303A1/en active Pending
- 2022-09-20 WO PCT/JP2022/034899 patent/WO2023054044A1/ja not_active Ceased
- 2022-09-20 CN CN202280056826.2A patent/CN117836463A/zh active Pending
- 2022-09-27 TW TW111136459A patent/TWI831391B/zh active
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS60238134A (ja) * | 1984-04-16 | 1985-11-27 | Tokuda Seisakusho Ltd | 真空処理装置 |
| JPH02115562U (https=) * | 1989-02-27 | 1990-09-17 | ||
| TW201021626A (en) * | 2008-09-30 | 2010-06-01 | Sekisui Chemical Co Ltd | Surface processing apparatus |
| TW201611172A (zh) * | 2014-07-31 | 2016-03-16 | 愛發科股份有限公司 | 基板處理裝置 |
Also Published As
| Publication number | Publication date |
|---|---|
| TW202321488A (zh) | 2023-06-01 |
| JPWO2023054044A1 (https=) | 2023-04-06 |
| CN117836463A (zh) | 2024-04-05 |
| US20240318303A1 (en) | 2024-09-26 |
| KR20240039073A (ko) | 2024-03-26 |
| WO2023054044A1 (ja) | 2023-04-06 |
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