TWI816568B - 光罩基底、光罩之製造方法及顯示裝置之製造方法 - Google Patents
光罩基底、光罩之製造方法及顯示裝置之製造方法 Download PDFInfo
- Publication number
- TWI816568B TWI816568B TW111137396A TW111137396A TWI816568B TW I816568 B TWI816568 B TW I816568B TW 111137396 A TW111137396 A TW 111137396A TW 111137396 A TW111137396 A TW 111137396A TW I816568 B TWI816568 B TW I816568B
- Authority
- TW
- Taiwan
- Prior art keywords
- film
- phase shift
- pattern
- mask
- etching
- Prior art date
Links
- 238000004519 manufacturing process Methods 0.000 title claims description 89
- 239000000758 substrate Substances 0.000 claims abstract description 267
- 238000005530 etching Methods 0.000 claims abstract description 217
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 70
- 239000010703 silicon Substances 0.000 claims abstract description 67
- 238000001039 wet etching Methods 0.000 claims abstract description 64
- 238000012546 transfer Methods 0.000 claims abstract description 54
- 229910052723 transition metal Inorganic materials 0.000 claims abstract description 48
- 150000003624 transition metals Chemical class 0.000 claims abstract description 47
- 230000010363 phase shift Effects 0.000 claims description 557
- 229920002120 photoresistant polymer Polymers 0.000 claims description 122
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 76
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 66
- 238000002834 transmittance Methods 0.000 claims description 58
- 239000011651 chromium Substances 0.000 claims description 40
- 239000000463 material Substances 0.000 claims description 38
- 229910052757 nitrogen Inorganic materials 0.000 claims description 36
- 238000000034 method Methods 0.000 claims description 35
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 claims description 33
- 229910052804 chromium Inorganic materials 0.000 claims description 33
- 238000007373 indentation Methods 0.000 claims description 27
- 229910052750 molybdenum Inorganic materials 0.000 claims description 25
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims description 24
- 239000011733 molybdenum Substances 0.000 claims description 24
- 230000003287 optical effect Effects 0.000 claims description 9
- 230000000873 masking effect Effects 0.000 claims description 4
- 239000012528 membrane Substances 0.000 claims description 4
- 230000007261 regionalization Effects 0.000 abstract description 30
- 239000010409 thin film Substances 0.000 abstract description 15
- 239000010408 film Substances 0.000 description 747
- 239000007789 gas Substances 0.000 description 104
- 238000004544 sputter deposition Methods 0.000 description 70
- 239000000203 mixture Substances 0.000 description 56
- 229910052760 oxygen Inorganic materials 0.000 description 38
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 36
- 239000001301 oxygen Substances 0.000 description 36
- 239000002245 particle Substances 0.000 description 34
- 230000000052 comparative effect Effects 0.000 description 32
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 30
- 239000007788 liquid Substances 0.000 description 30
- 238000005477 sputtering target Methods 0.000 description 24
- 229910021350 transition metal silicide Inorganic materials 0.000 description 20
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 18
- 238000004140 cleaning Methods 0.000 description 18
- 229910052786 argon Inorganic materials 0.000 description 15
- 230000007423 decrease Effects 0.000 description 15
- 230000000694 effects Effects 0.000 description 15
- 229910021344 molybdenum silicide Inorganic materials 0.000 description 15
- 238000001228 spectrum Methods 0.000 description 14
- 230000015572 biosynthetic process Effects 0.000 description 13
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 description 12
- VLTRZXGMWDSKGL-UHFFFAOYSA-N perchloric acid Chemical compound OCl(=O)(=O)=O VLTRZXGMWDSKGL-UHFFFAOYSA-N 0.000 description 12
- 230000003746 surface roughness Effects 0.000 description 12
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 11
- 238000004833 X-ray photoelectron spectroscopy Methods 0.000 description 11
- 229910052799 carbon Inorganic materials 0.000 description 11
- 239000002131 composite material Substances 0.000 description 11
- -1 silicide compound Chemical class 0.000 description 11
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 description 10
- 230000008569 process Effects 0.000 description 10
- 238000005546 reactive sputtering Methods 0.000 description 10
- MWUXSHHQAYIFBG-UHFFFAOYSA-N Nitric oxide Chemical compound O=[N] MWUXSHHQAYIFBG-UHFFFAOYSA-N 0.000 description 9
- YXTPWUNVHCYOSP-UHFFFAOYSA-N bis($l^{2}-silanylidene)molybdenum Chemical compound [Si]=[Mo]=[Si] YXTPWUNVHCYOSP-UHFFFAOYSA-N 0.000 description 9
- 239000001307 helium Substances 0.000 description 9
- 229910052734 helium Inorganic materials 0.000 description 9
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 9
- 239000010410 layer Substances 0.000 description 9
- 229910052751 metal Inorganic materials 0.000 description 9
- 239000002184 metal Substances 0.000 description 9
- 229910021332 silicide Inorganic materials 0.000 description 9
- 238000010586 diagram Methods 0.000 description 8
- 239000011521 glass Substances 0.000 description 8
- 239000000243 solution Substances 0.000 description 8
- 238000004381 surface treatment Methods 0.000 description 8
- CXOWYMLTGOFURZ-UHFFFAOYSA-N azanylidynechromium Chemical compound [Cr]#N CXOWYMLTGOFURZ-UHFFFAOYSA-N 0.000 description 7
- UFGZSIPAQKLCGR-UHFFFAOYSA-N chromium carbide Chemical compound [Cr]#C[Cr]C#[Cr] UFGZSIPAQKLCGR-UHFFFAOYSA-N 0.000 description 7
- 239000000470 constituent Substances 0.000 description 7
- 239000011261 inert gas Substances 0.000 description 7
- 229910003470 tongbaite Inorganic materials 0.000 description 7
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 7
- 238000004458 analytical method Methods 0.000 description 6
- 230000008859 change Effects 0.000 description 6
- 238000001514 detection method Methods 0.000 description 6
- 238000009826 distribution Methods 0.000 description 6
- 238000011160 research Methods 0.000 description 6
- 239000000126 substance Substances 0.000 description 6
- 238000005259 measurement Methods 0.000 description 5
- 150000004767 nitrides Chemical class 0.000 description 5
- 230000035515 penetration Effects 0.000 description 5
- CURLTUGMZLYLDI-UHFFFAOYSA-N Carbon dioxide Chemical compound O=C=O CURLTUGMZLYLDI-UHFFFAOYSA-N 0.000 description 4
- 238000004380 ashing Methods 0.000 description 4
- HKVFISRIUUGTIB-UHFFFAOYSA-O azanium;cerium;nitrate Chemical compound [NH4+].[Ce].[O-][N+]([O-])=O HKVFISRIUUGTIB-UHFFFAOYSA-O 0.000 description 4
- 230000005540 biological transmission Effects 0.000 description 4
- XMPZTFVPEKAKFH-UHFFFAOYSA-P ceric ammonium nitrate Chemical compound [NH4+].[NH4+].[Ce+4].[O-][N+]([O-])=O.[O-][N+]([O-])=O.[O-][N+]([O-])=O.[O-][N+]([O-])=O.[O-][N+]([O-])=O.[O-][N+]([O-])=O XMPZTFVPEKAKFH-UHFFFAOYSA-P 0.000 description 4
- 239000011248 coating agent Substances 0.000 description 4
- 238000000576 coating method Methods 0.000 description 4
- 238000001816 cooling Methods 0.000 description 4
- 238000011161 development Methods 0.000 description 4
- 230000018109 developmental process Effects 0.000 description 4
- 238000010438 heat treatment Methods 0.000 description 4
- 238000005406 washing Methods 0.000 description 4
- MIMUSZHMZBJBPO-UHFFFAOYSA-N 6-methoxy-8-nitroquinoline Chemical compound N1=CC=CC2=CC(OC)=CC([N+]([O-])=O)=C21 MIMUSZHMZBJBPO-UHFFFAOYSA-N 0.000 description 3
- 230000000903 blocking effect Effects 0.000 description 3
- 238000010276 construction Methods 0.000 description 3
- 239000013039 cover film Substances 0.000 description 3
- 239000010419 fine particle Substances 0.000 description 3
- 229910052743 krypton Inorganic materials 0.000 description 3
- DNNSSWSSYDEUBZ-UHFFFAOYSA-N krypton atom Chemical compound [Kr] DNNSSWSSYDEUBZ-UHFFFAOYSA-N 0.000 description 3
- 229910052754 neon Inorganic materials 0.000 description 3
- GKAOGPIIYCISHV-UHFFFAOYSA-N neon atom Chemical compound [Ne] GKAOGPIIYCISHV-UHFFFAOYSA-N 0.000 description 3
- 238000002310 reflectometry Methods 0.000 description 3
- 238000001878 scanning electron micrograph Methods 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 3
- 238000010301 surface-oxidation reaction Methods 0.000 description 3
- 229910052724 xenon Inorganic materials 0.000 description 3
- FHNFHKCVQCLJFQ-UHFFFAOYSA-N xenon atom Chemical compound [Xe] FHNFHKCVQCLJFQ-UHFFFAOYSA-N 0.000 description 3
- MGWGWNFMUOTEHG-UHFFFAOYSA-N 4-(3,5-dimethylphenyl)-1,3-thiazol-2-amine Chemical compound CC1=CC(C)=CC(C=2N=C(N)SC=2)=C1 MGWGWNFMUOTEHG-UHFFFAOYSA-N 0.000 description 2
- VHUUQVKOLVNVRT-UHFFFAOYSA-N Ammonium hydroxide Chemical compound [NH4+].[OH-] VHUUQVKOLVNVRT-UHFFFAOYSA-N 0.000 description 2
- 239000004215 Carbon black (E152) Substances 0.000 description 2
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 2
- 229910016006 MoSi Inorganic materials 0.000 description 2
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 description 2
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 2
- ATUOYWHBWRKTHZ-UHFFFAOYSA-N Propane Chemical compound CCC ATUOYWHBWRKTHZ-UHFFFAOYSA-N 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 2
- PPBRXRYQALVLMV-UHFFFAOYSA-N Styrene Chemical compound C=CC1=CC=CC=C1 PPBRXRYQALVLMV-UHFFFAOYSA-N 0.000 description 2
- 229910010413 TiO 2 Inorganic materials 0.000 description 2
- 230000002159 abnormal effect Effects 0.000 description 2
- 239000005354 aluminosilicate glass Substances 0.000 description 2
- 235000011114 ammonium hydroxide Nutrition 0.000 description 2
- 239000007864 aqueous solution Substances 0.000 description 2
- GPBUGPUPKAGMDK-UHFFFAOYSA-N azanylidynemolybdenum Chemical compound [Mo]#N GPBUGPUPKAGMDK-UHFFFAOYSA-N 0.000 description 2
- 230000008033 biological extinction Effects 0.000 description 2
- 239000001569 carbon dioxide Substances 0.000 description 2
- 229910002092 carbon dioxide Inorganic materials 0.000 description 2
- 238000007865 diluting Methods 0.000 description 2
- 238000002149 energy-dispersive X-ray emission spectroscopy Methods 0.000 description 2
- 239000011737 fluorine Substances 0.000 description 2
- 229910052731 fluorine Inorganic materials 0.000 description 2
- 229930195733 hydrocarbon Natural products 0.000 description 2
- 150000002430 hydrocarbons Chemical class 0.000 description 2
- XEMZLVDIUVCKGL-UHFFFAOYSA-N hydrogen peroxide;sulfuric acid Chemical compound OO.OS(O)(=O)=O XEMZLVDIUVCKGL-UHFFFAOYSA-N 0.000 description 2
- FXNGWBDIVIGISM-UHFFFAOYSA-N methylidynechromium Chemical compound [Cr]#[C] FXNGWBDIVIGISM-UHFFFAOYSA-N 0.000 description 2
- 239000011259 mixed solution Substances 0.000 description 2
- JCXJVPUVTGWSNB-UHFFFAOYSA-N nitrogen dioxide Inorganic materials O=[N]=O JCXJVPUVTGWSNB-UHFFFAOYSA-N 0.000 description 2
- 239000000523 sample Substances 0.000 description 2
- 238000004904 shortening Methods 0.000 description 2
- 239000002356 single layer Substances 0.000 description 2
- 239000005361 soda-lime glass Substances 0.000 description 2
- 230000003595 spectral effect Effects 0.000 description 2
- 239000010936 titanium Substances 0.000 description 2
- 230000001131 transforming effect Effects 0.000 description 2
- 229910000314 transition metal oxide Inorganic materials 0.000 description 2
- 229910021355 zirconium silicide Inorganic materials 0.000 description 2
- WEAMLHXSIBDPGN-UHFFFAOYSA-N (4-hydroxy-3-methylphenyl) thiocyanate Chemical compound CC1=CC(SC#N)=CC=C1O WEAMLHXSIBDPGN-UHFFFAOYSA-N 0.000 description 1
- DDFHBQSCUXNBSA-UHFFFAOYSA-N 5-(5-carboxythiophen-2-yl)thiophene-2-carboxylic acid Chemical compound S1C(C(=O)O)=CC=C1C1=CC=C(C(O)=O)S1 DDFHBQSCUXNBSA-UHFFFAOYSA-N 0.000 description 1
- 206010027146 Melanoderma Diseases 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- WGLPBDUCMAPZCE-UHFFFAOYSA-N Trioxochromium Chemical compound O=[Cr](=O)=O WGLPBDUCMAPZCE-UHFFFAOYSA-N 0.000 description 1
- 229910006249 ZrSi Inorganic materials 0.000 description 1
- 230000002378 acidificating effect Effects 0.000 description 1
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 1
- SJKRCWUQJZIWQB-UHFFFAOYSA-N azane;chromium Chemical compound N.[Cr] SJKRCWUQJZIWQB-UHFFFAOYSA-N 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 239000001273 butane Substances 0.000 description 1
- 150000001845 chromium compounds Chemical class 0.000 description 1
- 229910000423 chromium oxide Inorganic materials 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 238000000691 measurement method Methods 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 150000001247 metal acetylides Chemical class 0.000 description 1
- KVMWOOXRTBUMIS-UHFFFAOYSA-N molybdenum zirconium Chemical compound [Zr].[Mo].[Mo] KVMWOOXRTBUMIS-UHFFFAOYSA-N 0.000 description 1
- IJDNQMDRQITEOD-UHFFFAOYSA-N n-butane Chemical compound CCCC IJDNQMDRQITEOD-UHFFFAOYSA-N 0.000 description 1
- OFBQJSOFQDEBGM-UHFFFAOYSA-N n-pentane Natural products CCCCC OFBQJSOFQDEBGM-UHFFFAOYSA-N 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 239000001294 propane Substances 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 238000001350 scanning transmission electron microscopy Methods 0.000 description 1
- VSZWPYCFIRKVQL-UHFFFAOYSA-N selanylidenegallium;selenium Chemical compound [Se].[Se]=[Ga].[Se]=[Ga] VSZWPYCFIRKVQL-UHFFFAOYSA-N 0.000 description 1
- 239000002210 silicon-based material Substances 0.000 description 1
- 238000003892 spreading Methods 0.000 description 1
- 230000007480 spreading Effects 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- 239000013077 target material Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 230000009466 transformation Effects 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/1303—Apparatus specially adapted to the manufacture of LCDs
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
- G03F1/80—Etching
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Nonlinear Science (AREA)
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Chemical & Material Sciences (AREA)
- Optics & Photonics (AREA)
- Crystallography & Structural Chemistry (AREA)
- Preparing Plates And Mask In Photomechanical Process (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Mathematical Physics (AREA)
- Health & Medical Sciences (AREA)
- Environmental & Geological Engineering (AREA)
- Epidemiology (AREA)
- Public Health (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
Applications Claiming Priority (6)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2018-224907 | 2018-11-30 | ||
| JP2018224907 | 2018-11-30 | ||
| JP2019062891A JP7159096B2 (ja) | 2019-03-28 | 2019-03-28 | フォトマスクブランク、フォトマスクの製造方法及び表示装置の製造方法 |
| JP2019-062891 | 2019-03-28 | ||
| JP2019-179723 | 2019-09-30 | ||
| JP2019179723A JP7059234B2 (ja) | 2018-11-30 | 2019-09-30 | フォトマスクブランク、フォトマスクの製造方法及び表示装置の製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW202303262A TW202303262A (zh) | 2023-01-16 |
| TWI816568B true TWI816568B (zh) | 2023-09-21 |
Family
ID=70945001
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW111137396A TWI816568B (zh) | 2018-11-30 | 2019-10-17 | 光罩基底、光罩之製造方法及顯示裝置之製造方法 |
| TW112131103A TWI835695B (zh) | 2018-11-30 | 2019-10-17 | 光罩基底、光罩之製造方法及顯示裝置之製造方法 |
Family Applications After (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW112131103A TWI835695B (zh) | 2018-11-30 | 2019-10-17 | 光罩基底、光罩之製造方法及顯示裝置之製造方法 |
Country Status (3)
| Country | Link |
|---|---|
| KR (3) | KR102527313B1 (ko) |
| CN (1) | CN111258175A (ko) |
| TW (2) | TWI816568B (ko) |
Families Citing this family (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20220023647A (ko) * | 2020-08-21 | 2022-03-02 | 삼성전자주식회사 | 적층형 디스플레이 장치 및 이의 영상 제공 방법 |
| CN113005410A (zh) * | 2021-02-08 | 2021-06-22 | 上海传芯半导体有限公司 | 掩模基版的制造方法及制造设备 |
| CN113050564B (zh) * | 2021-03-12 | 2022-04-26 | 中国科学院近代物理研究所 | 核孔膜蚀刻线自反馈联动生产控制装置 |
| KR102400198B1 (ko) * | 2021-04-30 | 2022-05-18 | 에스케이씨솔믹스 주식회사 | 포토마스크 블랭크, 포토마스크 및 반도체소자의 제조방법 |
| KR102402742B1 (ko) * | 2021-04-30 | 2022-05-26 | 에스케이씨솔믹스 주식회사 | 포토마스크 블랭크 및 이를 이용한 포토마스크 |
| KR102400200B1 (ko) * | 2021-04-30 | 2022-05-18 | 에스케이씨솔믹스 주식회사 | 포토마스크 블랭크, 포토마스크 및 반도체소자의 제조방법 |
| KR102475672B1 (ko) * | 2021-11-03 | 2022-12-07 | 에스케이씨솔믹스 주식회사 | 블랭크 마스크 및 이를 이용한 포토마스크 |
| KR102535171B1 (ko) * | 2021-11-04 | 2023-05-26 | 에스케이엔펄스 주식회사 | 블랭크 마스크 및 이를 이용한 포토마스크 |
| KR102495225B1 (ko) * | 2021-12-15 | 2023-02-06 | 에스케이엔펄스 주식회사 | 블랭크 마스크 및 이를 이용한 포토마스크 |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI418927B (zh) * | 2010-04-23 | 2013-12-11 | S&S Tech Co Ltd | 空白遮罩、光罩以及其製造方法 |
| TWI579641B (zh) * | 2014-03-26 | 2017-04-21 | Ｈｏｙａ股份有限公司 | 遮罩基底用基板、遮罩基底及轉印用遮罩及該等之製造方法 |
| JP2018116269A (ja) * | 2017-01-18 | 2018-07-26 | Hoya株式会社 | 表示装置製造用の位相シフトマスクブランク、表示装置製造用の位相シフトマスクの製造方法、並びに表示装置の製造方法 |
| US10078260B2 (en) * | 2015-03-31 | 2018-09-18 | Shin-Etsu Chemical Co., Ltd. | Phase shift mask blank, phase shift mask, and blank preparing method |
| TW201841045A (zh) * | 2017-01-16 | 2018-11-16 | 日商Ｈｏｙａ股份有限公司 | 顯示裝置製造用之相移光罩基底、顯示裝置製造用之相移光罩之製造方法、及顯示裝置之製造方法 |
Family Cites Families (17)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5862413A (ja) | 1981-09-22 | 1983-04-13 | 張 和▲りよう▼ | 照明灯付燃焼装置 |
| JP3222531B2 (ja) * | 1992-03-23 | 2001-10-29 | 大日本印刷株式会社 | 位相シフト層を有するフォトマスクの製造方法 |
| KR100207473B1 (ko) * | 1996-06-07 | 1999-07-15 | 윤종용 | 위상반전마스크의 제작방법 |
| JP2000003029A (ja) * | 1998-06-15 | 2000-01-07 | Hoya Corp | フォトマスク及びフォトマスクの製造方法 |
| KR19990029230A (ko) | 1998-06-22 | 1999-04-26 | 손종은 | 변기가 부착된 환자용 의자겸용 침대 |
| TWI457696B (zh) * | 2008-03-31 | 2014-10-21 | Hoya Corp | 空白光罩、光罩及空白光罩之製造方法 |
| JP5356784B2 (ja) * | 2008-11-19 | 2013-12-04 | Ｈｏｙａ株式会社 | フォトマスクブランクの製造方法及びフォトマスクの製造方法 |
| JP5497288B2 (ja) * | 2008-12-29 | 2014-05-21 | Ｈｏｙａ株式会社 | フォトマスクブランクの製造方法及びフォトマスクの製造方法 |
| JP4798401B2 (ja) * | 2009-03-09 | 2011-10-19 | 信越化学工業株式会社 | 位相シフトマスクブランク及び位相シフトマスクの製造方法 |
| CN102269925B (zh) * | 2011-09-09 | 2012-10-03 | 北京理工大学 | 一种基于Abbe矢量成像模型的相移掩膜优化方法 |
| JP5403040B2 (ja) * | 2011-12-02 | 2014-01-29 | 大日本印刷株式会社 | 階調マスク |
| US20130293858A1 (en) * | 2012-05-04 | 2013-11-07 | Taiwan Semiconductor Manufacturing Company, Ltd. | Anisotropic phase shifting mask |
| JP6101646B2 (ja) * | 2013-02-26 | 2017-03-22 | Hoya株式会社 | 位相シフトマスクブランク及びその製造方法、位相シフトマスク及びその製造方法、並びに表示装置の製造方法 |
| JP6138676B2 (ja) * | 2013-12-27 | 2017-05-31 | Hoya株式会社 | 位相シフトマスクブランク及びその製造方法、並びに位相シフトマスクの製造方法 |
| JP6499440B2 (ja) | 2014-12-24 | 2019-04-10 | Hoya株式会社 | 反射型マスクブランク及び反射型マスク |
| WO2016158649A1 (ja) * | 2015-03-27 | 2016-10-06 | Hoya株式会社 | マスクブランク、位相シフトマスク及び位相シフトマスクの製造方法、並びに半導体装置の製造方法 |
| KR101801101B1 (ko) | 2016-03-16 | 2017-11-27 | 주식회사 에스앤에스텍 | 위상반전 블랭크 마스크 및 포토 마스크 |
-
2019
- 2019-10-17 TW TW111137396A patent/TWI816568B/zh active
- 2019-10-17 TW TW112131103A patent/TWI835695B/zh active
- 2019-11-14 KR KR1020190145981A patent/KR102527313B1/ko active IP Right Grant
- 2019-11-27 CN CN201911179769.3A patent/CN111258175A/zh active Pending
-
2023
- 2023-04-25 KR KR1020230054240A patent/KR102630136B1/ko active IP Right Grant
-
2024
- 2024-01-23 KR KR1020240010271A patent/KR20240017031A/ko not_active Application Discontinuation
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI418927B (zh) * | 2010-04-23 | 2013-12-11 | S&S Tech Co Ltd | 空白遮罩、光罩以及其製造方法 |
| TWI579641B (zh) * | 2014-03-26 | 2017-04-21 | Ｈｏｙａ股份有限公司 | 遮罩基底用基板、遮罩基底及轉印用遮罩及該等之製造方法 |
| US10078260B2 (en) * | 2015-03-31 | 2018-09-18 | Shin-Etsu Chemical Co., Ltd. | Phase shift mask blank, phase shift mask, and blank preparing method |
| TW201841045A (zh) * | 2017-01-16 | 2018-11-16 | 日商Ｈｏｙａ股份有限公司 | 顯示裝置製造用之相移光罩基底、顯示裝置製造用之相移光罩之製造方法、及顯示裝置之製造方法 |
| JP2018116269A (ja) * | 2017-01-18 | 2018-07-26 | Hoya株式会社 | 表示装置製造用の位相シフトマスクブランク、表示装置製造用の位相シフトマスクの製造方法、並びに表示装置の製造方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| KR20240017031A (ko) | 2024-02-06 |
| KR20200066178A (ko) | 2020-06-09 |
| TWI835695B (zh) | 2024-03-11 |
| TW202349107A (zh) | 2023-12-16 |
| CN111258175A (zh) | 2020-06-09 |
| KR102630136B1 (ko) | 2024-01-29 |
| TW202303262A (zh) | 2023-01-16 |
| KR102527313B1 (ko) | 2023-04-28 |
| KR20230065208A (ko) | 2023-05-11 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| TWI816568B (zh) | 光罩基底、光罩之製造方法及顯示裝置之製造方法 | |
| JP7059234B2 (ja) | フォトマスクブランク、フォトマスクの製造方法及び表示装置の製造方法 | |
| JP7204496B2 (ja) | 位相シフトマスクブランク、位相シフトマスクの製造方法、及び表示装置の製造方法 | |
| TW202141168A (zh) | 光罩基底、光罩基底之製造方法、光罩之製造方法及顯示裝置之製造方法 | |
| TWI784131B (zh) | 相偏移光罩基底、相偏移光罩之製造方法、及顯示裝置之製造方法 | |
| JP7297692B2 (ja) | フォトマスクブランク、フォトマスクの製造方法、および表示装置の製造方法 | |
| JP7371198B2 (ja) | フォトマスクブランク、フォトマスクの製造方法及び表示装置の製造方法 | |
| TWI782237B (zh) | 光罩基底、光罩之製造方法及顯示裝置之製造方法 | |
| TWI847949B (zh) | 光罩基底、光罩之製造方法及顯示裝置之製造方法 | |
| TWI833171B (zh) | 光罩基底、光罩之製造方法及顯示裝置之製造方法 | |
| JP7204979B2 (ja) | フォトマスクブランク、フォトマスクの製造方法及び表示装置の製造方法 | |
| JP7254470B2 (ja) | 位相シフトマスクブランク、位相シフトマスクの製造方法、及び表示装置の製造方法 | |
| TW202422212A (zh) | 光罩基底、光罩之製造方法及顯示裝置之製造方法 | |
| TW202422210A (zh) | 光罩基底、光罩及顯示裝置之製造方法 | |
| JP2022153264A (ja) | フォトマスクブランク、フォトマスクの製造方法、および表示装置の製造方法 | |
| TW202141169A (zh) | 光罩基底、光罩之製造方法及顯示裝置之製造方法 |